CN107978522B - A kind of rough polishing technique reducing GaAs double-polished chip integral smoothness - Google Patents
A kind of rough polishing technique reducing GaAs double-polished chip integral smoothness Download PDFInfo
- Publication number
- CN107978522B CN107978522B CN201711308112.3A CN201711308112A CN107978522B CN 107978522 B CN107978522 B CN 107978522B CN 201711308112 A CN201711308112 A CN 201711308112A CN 107978522 B CN107978522 B CN 107978522B
- Authority
- CN
- China
- Prior art keywords
- revolving speed
- rough polishing
- duration
- polishing
- gaas double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Abstract
The invention discloses a kind of rough polishing techniques for reducing GaAs double-polished chip integral smoothness.Steps are as follows: after preparing rough polishing liquid, epoxy resin erratic star wheel is uniformly placed in polishing disk, then the GaAs double-polished chip in 3 μm of thickness deviation is faced up and is placed in epoxy resin erratic star wheel hole, program is checked oneself in execution, checks epoxy resin erratic star wheel and GaAs double-polished chip spin situation；After checking oneself program execution, polishing disk is fallen, completes to execute rough polishing program for the first time；After first time rough polishing EP (end of program), GaAs double-polished chip is overturn, program is checked oneself in back side up execution, then executes rough polishing program second；After repeating ten operations, GaAs double-polished chip is taken out from epoxy resin erratic star wheel, is put into white flower basket and is cleaned drying.Implementation through the invention effectively improves the integral smoothness of GaAs double-polished chip.
Description
Technical field
The present invention relates to a kind of rough polishing techniques for reducing GaAs double-polished chip integral smoothness, belong to semiconductor material preparation
Technical field, suitable for two-sided method of rough polishing used in GaAs double-polished chip preparation process.
Background technique
With the development of semiconductor integrated circuit, the diameter of GaAs double-polished chip is gradually increased.Although minor diameter GaAs
Double-polished chip still uses single-sided polishing to process, but to pursue preferable quality of finish, twin polishing has been increasingly becoming major diameter arsenic
Change the main process of gallium double-polished chip.And the reduction of electronic characteristic line width and the raising of integrated level, to GaAs double-polished chip
More stringent requirements are proposed for removal uniformity in piece.Currently, operating cost is low and the twin polishing method of comparative maturity is chemistry
It mechanically polishes (chemical mechanical polishing, CMP), the basic principle is that GaAs double-polished chip is being polished
Liquid (such as contains SiO2The chlorine system solution of colloidal suspension particle) in the presence of rotated relative to polishing cloth, and apply certain pressure
Power completes polishing by mechanical grinding and the alternating action of chemical attack, to remove the ground process of GaAs double-polished chip
In surface damage layer, while obtaining the GaAs double-polished chip of great surface quality.
Since chemically mechanical polishing mode needs chemical action to match with mechanism, it is related to 8 kinds of major parameters,
Respectively polishing fluid proportion, polishing flow quantity, SiO2Colloidal particle size, polishing cloth model, polishing disk rotating speed, interior outer gear ring revolving speed,
Polish pressure, polishing time.It is chemically-mechanicapolish polished different from single side, in double side chemical mechanical polishing process, GaAs is double to be thrown
The front and back of piece is removed simultaneously, when polishing being commonly used a length of 890s, every 6kg of polish pressure, polishing
Cloth model SUBA IV or SUBA Ⅹ, polishing disk rotating speed 45rpm, ring gear revolving speed 35rpm, outer gear ring revolving speed 25rpm, interior external tooth
It encloses revolving speed to run with the ratio of 1.4:1, obtains standard thickness after carrying out 3-5 turn-overs to GaAs double-polished chip in process
Product, but since revolving speed is very fast, surface removal rate is fast, and the running track of GaAs double-polished chip is concentrated mainly in polishing cloth
Heart district domain, the loss of polishing cloth central area is greater than edge loss in the polishing process of 890s, therefore subsequent processed
GaAs double-polished chip center removal rate can reduce in journey, and edge removal rate is constant, this will lead to GaAs double-polished chip
Center is thicker than the edges, and then increases GaAs double-polished chip integral smoothness, so current process is difficult guaranteeing to throw piece surface
Guarantee integral smoothness while quality, be typically only capable to guarantee integral smoothness at 3 μm, the partly flat degree of every 4 square micron
Maximum value is essentially 2.5-3 μm, and average value can only also guarantee 2 μm.
Summary of the invention
In order to overcome the above-mentioned deficiencies of the prior art, the present invention provides a kind of reduction GaAs double-polished chip integral smoothnesses
Rough polishing technique.The present invention is groped by multiple engineer testing, defines a kind of method of rough polishing of twin polishing.This method
One layer of densification, uniform oxide layer can be formed by chemical action surface in GaAs double-polished chip, equal by mechanism
The even removal oxide layer is guaranteeing the surface quality of GaAs double-polished chip to reduce GaAs double-polished chip integral smoothness
Meanwhile integral smoothness being controlled at 1 μm.
To achieve the above object, used technical solution is the present invention: a kind of reduction GaAs double-polished chip overall leveling
The rough polishing technique of degree, it is characterised in that: carry out as follows:
The first step, GaAs double-polished chip thickness sorting sort 700 ± 5 μm of thickness, several pieces group, thickness difference is less than or equal to 3
µm；
Bis- Walk prepares rough polishing liquid, weighs 15L deionized water with 5L measuring cup and pours into clean rough polishing liquid bucket, uses
1000ml measuring cup weighs 600mlNaClO solution and pours into 15L deionized water, and glass bar stirs 10 circles clockwise, then uses 1000ml
Measuring cup weighs 800ml 85 μm of SiO containing partial size2In the solution that particle solution is prepared before pouring into, glass bar stirs 10 circles clockwise；
Several epoxy resin erratic star wheels are uniformly placed in the lower polishing disk of two-sided 9B Twp-sided polishing machine by third step,
Place well-graded GaAs double-polished chip respectively in each epoxy resin erratic star wheel hole, GaAs double-polished chip just towards
On；
4th step, execution check oneself program, start two-sided 9B Twp-sided polishing machine, duration 90s, ring gear revolving speed 15rpm, external tooth
Revolving speed 10rpm, lower polishing disk rotating speed 10rpm are enclosed, checks epoxy resin erratic star wheel and GaAs double-polished chip spin situation；
5th step after checking oneself program execution, falls polishing disk, executes rough polishing program, rough polishing duration for the first time
990s, point 4 sections of progress, detailed process is as follows:
1) it, pressurizes, duration 8s, pressure 10kg, pressing time 8s apply liquid pipe and send rough polishing flow quantity 5.5ml/s；
2), rough polishing, duration 970s apply liquid pipe and send rough polishing flow quantity 5.5ml/s, and rough polishing is divided into four Duan Zhihang, and first segment is thick
Throw duration 30s, pressure 20kg, pressing time 30s, ring gear revolving speed 4rpm, outer gear ring revolving speed 8rpm, lower polishing disk rotating speed
8rpm；Second segment rough polishing duration 30s, pressure 30kg, pressing time 30s, ring gear revolving speed 8rpm, outer gear ring revolving speed 12rpm, under
Polishing disk rotating speed 12rpm；Third section rough polishing duration 900s, pressure 50kg, pressing time 30s, ring gear revolving speed 10rpm, external tooth
Enclose revolving speed 18rpm, lower polishing disk rotating speed 25rpm；4th section of rough polishing duration 10s, pressure 20kg, pressing time 10s, ring gear turn
Fast 4rpm, outer gear ring revolving speed 4rpm, lower polishing disk rotating speed 12rpm；
3), water throwing, duration 10s, no rough polishing liquid apply liquid pipe and send de-ionized water flow rate 10ml/s, water throwing duration 10s, pressure
5kg, pressing time 5s, ring gear revolving speed 4rpm, outer gear ring revolving speed 4rpm, lower polishing disk rotating speed 10rpm；
4) it, rinses, duration 2s, no rough polishing liquid applies liquid pipe and send de-ionized water flow rate 20ml/s, no pressure, no revolving speed, upthrow
CD rises slowly, pressing time 1s；
6th step takes out GaAs double-polished chip after first time rough polishing EP (end of program), back side up to be placed again into asphalt mixtures modified by epoxy resin
In rouge erratic star wheel hole, second of rough polishing program is executed, that is, the 4th is repeated, the 5th, bottom sheet after step 6 rapid 9 times, from epoxy
GaAs double-polished chip is taken out in resin erratic star wheel, is put into white flower basket and is dried, GaAs double-polished chip is with a thickness of 650 ± 2 μm；
7th step is since GaAs double-polished chip surface has the presence of organic matter and local chemically reactive layer after rough polishing
The better surface quality for checking GaAs double-polished chip, need to once be embathed with alkali electroless cleaning solution and deionized water,
Specific step is as follows: 1), the whole basket of alkali electroless cleaning solution embathe, 10 ~ 15s of duration, alkali electroless cleaning solution proportion be NH4OH:
H2O2: deionized water=1:1:10；2), deionized water is embathed, 20 ~ 25s of duration；
8th step, drying, program are divided into 3 sections, and total duration 350s is specifically included: 1), spraying, revolving speed 1600rpm, duration
100s；2) it, dries, revolving speed 1400rpm, duration 150s；3) it, dries, revolving speed 1000rpm, duration 100s；
9th step carries out surface quality to the GaAs double-polished chip that rough polishing finishes respectively and integral smoothness is examined.
The beneficial effects of the present invention are: compared with prior art, the present invention solves current GaAs double-polished chip and prepared
It can not guarantee the problem of overall surface flatness is 1 μm in journey under the premise of guaranteeing surface quality.The present invention is by adjusting thick
It throws liquid proportion and guarantees GaAs double-polished chip removal rate, while by reducing polishing disk and interior outer gear ring revolving speed, reducing polishing pressure
The modes such as power, increase turn-over number reduce the loss of polishing cloth central area, thus guaranteeing GaAs double-polished chip surface matter
1 μm of integral smoothness is obtained under the premise of amount, less than 1.5 μm, average value is less than the partly flat degree maximum value of every 4 square micron
1 μm of GaAs double-polished chip.
Detailed description of the invention
Fig. 1 is the rough polishing schematic diagram of GaAs double-polished chip of the present invention；
Fig. 2 is the top view of Fig. 1；
Fig. 3 is process flow chart of the invention.
Fig. 1, in 2: polishing disk on 1., 2. apply liquid pipe, 3. lower polishing disks, 4. outer gear rings, 5. ring gears, 6. epoxy resin
Erratic star wheel, 7. GaAs double-polished chips.
Specific embodiment
The present invention is further described by 1, figure and Fig. 3 with reference to the accompanying drawing.
Embodiment 1: a kind of rough polishing technique reducing GaAs double-polished chip integral smoothness carries out as follows:
The first step, 7 thickness sorting of GaAs double-polished chip, sort 700 ± 5 μm of thickness, every 10 one group, thickness difference be less than etc.
In 3 μm.
Bis- Walk is weighed 15L deionized water with 5L measuring cup and poured into clean rough polishing liquid bucket, weighed using 1000ml measuring cup
600mlNaClO solution pours into 15L deionized water, and glass bar stirs 10 circles clockwise, then weighs 800ml with 1000ml measuring cup
Containing 85 μm of SiO of partial size2In the solution that particle solution is prepared before pouring into, glass bar stirs 10 circles clockwise.
Third step in outer gear ring 4 on the face of the lower polishing disk 3 of every 35 tooth, is put one piece of epoxy resin erratic star wheel 6, is put altogether
Five pieces of epoxy resin erratic star wheels 6 are set, in the two circular cavities in every piece of epoxy resin erratic star wheel 6, place 3 μm of thickness deviation respectively
Interior a piece of GaAs double-polished chip 7, GaAs double-polished chip 7 face up, the back side and lower 3 face contact of polishing disk, epoxy resin trip
The material of star-wheel 6 be epoxy resin, 500 μm of thickness, no tooth diameter 222.5mm, 232.5mm containing tooth diameter, the number of teeth 190, hole
102 ± 0.5mm of diameter.
Program is checked oneself in tetra- Walk, execution, starts 9B Twp-sided polishing machine, duration 90s, 5 revolving speed 15rpm of ring gear, outer gear ring 4
Revolving speed 10rpm, lower 3 revolving speed 10rpm of polishing disk check 7 spin situation of epoxy resin erratic star wheel 6 and GaAs double-polished chip.
5th step after checking oneself program execution, falls polishing disk 1, executes rough polishing program, rough polishing duration for the first time
990s, point 4 sections of progress, detailed process is as follows:
1) it, pressurizes, duration 8s, pressure 10kg, pressing time 8s apply liquid pipe 2 and send rough polishing flow quantity 5.5ml/s.
2), rough polishing, duration 970s apply liquid pipe 2 and send rough polishing flow quantity 5.5ml/s, and rough polishing is divided into four Duan Zhihang, and first segment is thick
Throw duration 30s, pressure 20kg, pressing time 30s, 5 revolving speed 4rpm of ring gear, 4 revolving speed 8rpm of outer gear ring, lower 3 revolving speed of polishing disk
8rpm.Second segment rough polishing duration 30s, pressure 30kg, pressing time 30s, 5 revolving speed 8rpm of ring gear, 4 revolving speed 12rpm of outer gear ring,
Lower 3 revolving speed 12rpm of polishing disk.
Third section rough polishing duration 900s, pressure 50kg, pressing time 30s, 5 revolving speed 10rpm of ring gear, 4 revolving speed of outer gear ring
18rpm, lower 3 revolving speed 25rpm of polishing disk.
4th section of rough polishing duration 10s, pressure 20kg, pressing time 10s, 5 revolving speed 4rpm of ring gear, 4 revolving speed of outer gear ring
4rpm, lower 3 revolving speed 12rpm of polishing disk.
3), water throwing, duration 10s, no rough polishing liquid apply liquid pipe 2 and send de-ionized water flow rate 10ml/s, water throwing duration 10s, pressure
5kg, pressing time 5s, 5 revolving speed 4rpm of ring gear, outer gear ring 4 revolving speed 4rpm, lower 3 revolving speed 10rpm of polishing disk.
4) it, rinses, duration 2s, no rough polishing liquid, applies liquid pipe 2 and send de-ionized water flow rate 20ml/s, no pressure, no revolving speed, on
Polishing disk 1 rises slowly, pressing time 1s.
After rough polishing EP (end of program), GaAs double-polished chip 7 is taken out for 6th step, back side up to be placed again into epoxy resin trip
In 6 hole of star-wheel, bottom sheet after 4,5,6 steps 9 time is repeated, is put into white flower basket.After rough polishing GaAs double-polished chip 7 with a thickness of
650±2µm。
After first time rough polishing EP (end of program), GaAs double-polished chip 7 is taken out, it is back side up to be placed again into epoxy resin wandering star
It takes turns in 6 holes, executes second of rough polishing program, that is, repeat the 4th, the 5th, bottom sheet after step 6 rapid 9 times, swum from epoxy resin
GaAs double-polished chip 7 is taken out in star-wheel 6, is put into white flower basket and is dried, GaAs double-polished chip 7 is after rough polishing with a thickness of 650 ± 2 μm.
7th step is since 7 surface of GaAs double-polished chip has the presence of organic matter and local chemically reactive layer after rough polishing
The better surface quality for checking GaAs double-polished chip 7, need to once be embathed with alkali electroless cleaning solution and deionized water,
Specific step is as follows: 1) the whole basket of alkali electroless cleaning solution embathes, 10 ~ 15s of duration, matches as NH4OH:H2O2: deionized water=1:
1:10.2) deionized water is embathed, 20 ~ 25s of duration.
8th step, drying, program are divided into 3 sections, and total duration 350s is specifically included: 1) spraying, revolving speed 1600rpm, duration
100s.2) it dries, revolving speed 1400rpm, duration 150s.3) it dries, revolving speed 1000rpm, duration 100s.
9th step carries out surface quality to the GaAs double-polished chip 7 that rough polishing finishes respectively and integral smoothness is examined.
Embodiment 2: the difference of present embodiment and embodiment 1 is: step 2 800mlNaClO solution, and 1000ml contains grain
85 μm of SiO of diameter2The solution of particle, other steps and parameter are same as Example 1.
Embodiment 3: the difference of present embodiment and embodiment 1 is: applying liquid pipe 2 in step 5 and send rough polishing flow quantity
7.0ml/s, third section rough polishing duration 900s, pressure 50kg, pressing time 30s, 5 revolving speed 15rpm of ring gear, 4 revolving speed of outer gear ring
25rpm, lower 3 revolving speed 35rpm of polishing disk, other steps and parameter are same as Example 1.
Claims (1)
1. a kind of rough polishing technique for reducing GaAs double-polished chip integral smoothness, it is characterised in that: carry out as follows:
The first step, GaAs double-polished chip (7) thickness sorting sort 700 ± 5 μm of thickness, several pieces group, thickness difference is less than or equal to 3 μ
m；
Bis- Walk prepares rough polishing liquid, weighs 15L deionized water with 5L measuring cup and pours into clean rough polishing liquid bucket, uses 1000ml
Measuring cup weighs 600mlNaClO solution and pours into 15L deionized water, and glass bar stirs 10 circles clockwise, then is claimed with 1000ml measuring cup
Measure 800ml 85 μm of SiO containing partial size2In the solution that particle solution is prepared before pouring into, glass bar stirs 10 circles clockwise；
Several epoxy resin erratic star wheels (6) are uniformly placed on lower polishing disk (3) face of two-sided 9B Twp-sided polishing machine by third step
On, well-graded GaAs double-polished chip (7), GaAs double-polished chip are placed respectively in each epoxy resin erratic star wheel (6) hole
(7) face up；
4th step, execution check oneself program, start two-sided 9B Twp-sided polishing machine, duration 90s, ring gear (5) revolving speed 15rpm, external tooth
(4) revolving speed 10rpm, lower polishing disk (3) revolving speed 10rpm are enclosed, checks epoxy resin erratic star wheel (6) and GaAs double-polished chip (7) certainly
Rotation situation；
5th step is fallen polishing disk (1) after checking oneself program execution, executes rough polishing program, rough polishing duration for the first time
990s, point 4 sections of progress, detailed process is as follows:
1) it, pressurizes, duration 8s, pressure 10kg, pressing time 8s apply liquid pipe (2) and send rough polishing flow quantity 5.5ml/s；
2), rough polishing, duration 970s apply liquid pipe (2) and send rough polishing flow quantity 5.5ml/s, and rough polishing is divided into four Duan Zhihang, first segment rough polishing
Duration 30s, pressure 20kg, pressing time 30s, ring gear (5) revolving speed 4rpm, outer gear ring (4) revolving speed 8rpm, lower polishing disk (3)
Revolving speed 8rpm；Second segment rough polishing duration 30s, pressure 30kg, pressing time 30s, ring gear (5) revolving speed 8rpm, outer gear ring (4) turn
Fast 12rpm, lower polishing disk (3) revolving speed 12rpm；Third section rough polishing duration 900s, pressure 50kg, pressing time 30s, ring gear
(5) revolving speed 10rpm, outer gear ring (4) revolving speed 18rpm, lower polishing disk (3) revolving speed 25rpm；4th section of rough polishing duration 10s, pressure
20kg, pressing time 10s, ring gear (5) revolving speed 4rpm, outer gear ring (4) revolving speed 4rpm, lower polishing disk (3) revolving speed 12rpm；
3), water throwing, duration 10s, no rough polishing liquid apply liquid pipe (2) and send de-ionized water flow rate 10ml/s, water throwing duration 10s, pressure
5kg, pressing time 5s, ring gear (5) revolving speed 4rpm, outer gear ring (4) revolving speed 4rpm, lower polishing disk (3) revolving speed 10rpm；
4) it, rinses, duration 2s, no rough polishing liquid applies liquid pipe (2) and send de-ionized water flow rate 20ml/s, no pressure, no revolving speed, upthrow
CD (1) rises slowly, pressing time 1s；
After first time rough polishing EP (end of program), GaAs double-polished chip (7) are taken out for 6th step, back side up to be placed again into asphalt mixtures modified by epoxy resin
In rouge erratic star wheel (6) hole, second of rough polishing program is executed, that is, the 4th is repeated, the 5th, bottom sheet after step 6 rapid 9 times, from ring
GaAs double-polished chip (7) are taken out in oxygen resin erratic star wheel (6), is put into white flower basket and dries, GaAs double-polished chip (7) with a thickness of
650±2µm；
7th step, since GaAs double-polished chip (7) surface has the presence of organic matter and local chemically reactive layer after rough polishing, in order to
The surface quality for preferably checking GaAs double-polished chip (7), need to once be embathed with alkali electroless cleaning solution and deionized water,
Specific step is as follows:
1), the whole basket of alkali electroless cleaning solution embathes, 10 ~ 15s of duration, and alkali electroless cleaning solution proportion is NH4OH:H2O2: deionization
Water=1:1:10；
2), deionized water is embathed, 20 ~ 25s of duration；
8th step, drying, program are divided into 3 sections, and total duration 350s is specifically included:
1) it, sprays, revolving speed 1600rpm, duration 100s；
2) it, dries, revolving speed 1400rpm, duration 150s；
3) it, dries, revolving speed 1000rpm, duration 100s；
9th step carries out surface quality to the GaAs double-polished chip (7) that rough polishing finishes respectively and integral smoothness is examined.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711308112.3A CN107978522B (en) | 2017-12-11 | 2017-12-11 | A kind of rough polishing technique reducing GaAs double-polished chip integral smoothness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711308112.3A CN107978522B (en) | 2017-12-11 | 2017-12-11 | A kind of rough polishing technique reducing GaAs double-polished chip integral smoothness |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107978522A CN107978522A (en) | 2018-05-01 |
| CN107978522B true CN107978522B (en) | 2019-09-03 |
Family
ID=62009903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711308112.3A Active CN107978522B (en) | 2017-12-11 | 2017-12-11 | A kind of rough polishing technique reducing GaAs double-polished chip integral smoothness |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107978522B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110695842B (en) * | 2019-11-01 | 2021-04-09 | 中国电子科技集团公司第四十六研究所 | Process method for surface planarization treatment of triple-junction gallium arsenide epitaxial layer |
| CN112466998B (en) * | 2020-12-09 | 2022-08-12 | 中国电子科技集团公司第四十六研究所 | Manufacturing method of four-inch 80-micron gallium arsenide double polished wafer |
| CN114800222B (en) * | 2022-05-13 | 2023-09-26 | 中锗科技有限公司 | Double-sided polishing method for germanium wafer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201776693U (en) * | 2010-04-21 | 2011-03-30 | 云南中科鑫圆晶体材料有限公司 | Double-side polisher |
| CN104015123A (en) * | 2014-06-18 | 2014-09-03 | 蓝思科技股份有限公司 | Double-sided polishing process for sapphire panel |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6888632B2 (en) * | 2003-02-28 | 2005-05-03 | Therma-Wave, Inc. | Modulated scatterometry |
| JP2007299845A (en) * | 2006-04-28 | 2007-11-15 | Nissan Motor Co Ltd | Semiconductor device, and method for manufacturing the same |
-
2017
- 2017-12-11 CN CN201711308112.3A patent/CN107978522B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201776693U (en) * | 2010-04-21 | 2011-03-30 | 云南中科鑫圆晶体材料有限公司 | Double-side polisher |
| CN104015123A (en) * | 2014-06-18 | 2014-09-03 | 蓝思科技股份有限公司 | Double-sided polishing process for sapphire panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107978522A (en) | 2018-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107978522B (en) | A kind of rough polishing technique reducing GaAs double-polished chip integral smoothness | |
| CN104582899B (en) | The grinding method of grinding agent, grinding agent set agent and matrix | |
| JP3269611B2 (en) | Slurry containing ligand or chelating agent for polishing the surface | |
| CN107617968A (en) | The Ginding process of grinding agent, grinding agent group and matrix | |
| CN108242396A (en) | A kind of processing method for reducing silicon polished surface roughness | |
| CN101367189A (en) | Silicon slice glazed surface scuffing control method | |
| CN101934490B (en) | Polishing process for ultrahigh-resistivity silicon polished wafer | |
| CN104802068B (en) | Chemical mechanical polishing method | |
| CN102528648A (en) | Nano diamond-macromolecular composite abrasive for solidifying abrasive polishing pad | |
| CN104395039A (en) | Polishing composition and fabrication method of substrate using same | |
| CN106625204B (en) | A kind of back side process method of large scale SiC wafer | |
| TW201525122A (en) | Chemical mechanical polishing slurry for shallow trench isolation and method thereof | |
| CN107398780A (en) | A kind of twin polishing method of wafer | |
| CN104347383B (en) | Method for manufacturing sapphire disk polishing pad trimmer | |
| CN109352502A (en) | A kind of bad process and method of doing over again of sapphire single-sided polishing piece thickness | |
| CN112745144A (en) | Anti-skid and anti-fouling method in polished brick preparation process | |
| CN207372924U (en) | A kind of sapphire substrate sheet double-sided polisher | |
| CN102935618B (en) | Lapping liquid, excessively throwing and end-point detection method and device, polissoir | |
| CN108161584A (en) | A kind of Ultraprecise polished method of metal works | |
| CN110168703A (en) | Cleansing composition for Substrate for semiconductor device | |
| CN104962234B (en) | Titania-doped diamond composite abrasive particle and preparation method and application thereof | |
| JP5906823B2 (en) | Method for manufacturing glass substrate for magnetic recording medium | |
| CN108581857B (en) | A kind of gallium arsenide wafer polishing ultra-fine buffing wheel and preparation method thereof | |
| CN110695842B (en) | Process method for surface planarization treatment of triple-junction gallium arsenide epitaxial layer | |
| CN109366347A (en) | A kind of grinding pad and preparation method thereof suitable for hard brittle material precise finiss |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |