CN110695842B - Process method for surface planarization treatment of triple-junction gallium arsenide epitaxial layer - Google Patents
Process method for surface planarization treatment of triple-junction gallium arsenide epitaxial layer Download PDFInfo
- Publication number
- CN110695842B CN110695842B CN201911060784.6A CN201911060784A CN110695842B CN 110695842 B CN110695842 B CN 110695842B CN 201911060784 A CN201911060784 A CN 201911060784A CN 110695842 B CN110695842 B CN 110695842B
- Authority
- CN
- China
- Prior art keywords
- polishing
- wafer
- deionized water
- epitaxial layer
- gallium arsenide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
Abstract
The invention relates to a process method for the surface planarization treatment of a triple-junction gallium arsenide epitaxial layer, which comprises the following steps of preparing two kinds of polishing solutions, and then placing a wafer in a wax-free pad adhered to a pressing block; the three-junction gallium arsenide epitaxial layer is tightly attached to the damping cloth on the polishing disc, a self-checking program is executed, and the spinning conditions of the pressing block and the wafer are checked; after the self-checking program is executed, applying a first polishing solution and executing a first section of polishing program; after the first stage of procedure is finished, closing the first polishing solution, applying the second polishing solution, and executing a second stage of procedure; and after the second stage of procedure is finished, closing the polishing solution, taking out the wafer from the wax-free pad stuck on the pressing block, and putting the wafer into a white basket for cleaning. The technical effect is that the problems that the existing triple-junction gallium arsenide epitaxial layer cannot reach the overall flatness of 1 mu m and the surface roughness below 3nm on the premise of ensuring the surface quality are solved, the surface flatness of the triple-junction gallium arsenide epitaxial layer can be effectively improved, the surface roughness is reduced, and the bonding effect is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor material preparation, in particular to a chemical mechanical polishing method used in a preparation process of a flat surface of a triple-junction gallium arsenide epitaxial layer.
Background
With the development and progress of solar cell technology, people generally refer to crystalline silicon solar cells as a first-generation solar cell technology, the photoelectric conversion rate of which is generally 15% -25%, and refer to amorphous silicon thin-film solar cells as a second-generation solar cell technology, the photoelectric conversion rate of which is lower, generally only 6% -10%. With the increasing demand of people on energy and the increasing emphasis on environmental protection, the rapid development of solar cells is promoted. Therefore, new solar cells, i.e., third generation solar cells, need to be developed. The third generation solar cell mainly comprises a multijunction gallium arsenide solar cell, a hot carrier solar cell, a perovskite solar cell and the like, wherein the results obtained by the research of the high-efficiency multijunction gallium arsenide solar cell technology are most prominent, and the multijunction cascade gallium arsenide solar cell is the solar cell with the highest photoelectric conversion efficiency which is accepted in the world at present and has broken through 40%. At present, the high-efficiency multi-junction gallium arsenide solar cell is widely applied to the field of aerospace.
The direct bonding of the wafer is to bond the two wafer surfaces directly, and anneal them at a certain temperature and pressure to combine them by molecular force or atomic force, which requires the roughness of the wafer surface to be bonded to reach atomic level, and the wafer surface cannot have too large fluctuation, so the bonding surface needs to be planarized, the common method is CMP (chemical mechanical polishing), and the rough surface is processed to be atomic level flatness. As the chemical mechanical polishing mode needs to match the chemical action with the mechanical action, 8 main parameters are involved, namely the proportion of the polishing solution, the flow rate of the polishing solution and SiO2Colloid particle size, polishing cloth type, polishing disc rotating speed, polishing pressure and polishing time. At present, a multi-wafer single-side polishing technology is commonly used, the polishing time is 180s, the polishing pressure is 5kg per wafer, the type of polishing cloth is Politex HI, the rotating speed of a polishing disc is 70rpm, and the flow of polishing solution is 8-10 ml/s, but the nano-scale removal precision is difficult to control due to the high rotating speed and high surface removal rate, multiple wafers polished in the same batch are relatively random in distribution of the polishing solution, and the surface flatness of the wafers polished in the same batch usually has micron-scale difference, so that the surface removal thickness is not uniform.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a process method for the surface planarization treatment of the triple junction gallium arsenide epitaxial layer. The invention determines a fine polishing method for single-side polishing through a plurality of process tests. According to the method, a compact and uniform oxide layer can be formed on the surface of the triple-junction gallium arsenide epitaxial layer, the oxide layer is uniformly removed through mechanical action, nanoscale removal is achieved, and the surface quality of the epitaxial layer is guaranteed while the overall flatness is controlled to be below 1 mu m.
The specific technical scheme is that the technological method for the surface planarization treatment of the triple-junction gallium arsenide epitaxial layer is characterized in that: adopts a grinding and polishing machine model LP50 of Loctitech company in England, and the process method comprises the following steps,
step one, preparing polishing solution, wherein the polishing solution I: pouring 15L of deionized water into a clean polishing solution barrel, weighing 100-200 g of chloride powder, 150g of thiosulfide powder, 100-300 g of polyphosphate powder and 40-150 g of bicarbonate powder by using a 0.01g electronic scale respectively, pouring into 15L of deionized water, stirring for 10min by using a stirrer at 700rpm, and obtaining a second polishing solution: 15L of deionized water is poured into a clean polishing solution barrel, and a 1000ml measuring cup is used for weighing SiO with the particle size of 85 mu m2Pouring 1-2L of the particle solution into 15L of deionized water, and stirring clockwise for 10 circles by using a glass rod;
secondly, sticking a wax-free pad on the bottom surface of the pressurizing block, wherein the wax-free pad is a wafer made of damping cloth and provided with a blind hole in the center, the thickness of the wax-free pad is 1200 mu m, the diameter of an outer ring is 101mm, the diameter of an inner ring is 100.3mm, and the hole depth = the thickness of the wafer 0.75 +/-5 mu m;
thirdly, attaching polishing cloth to a polishing disk, wherein the size of the polishing disk is 14.6 percent when the polishing disk is 37cm, the external dimension of the polishing cloth is the same as the external dimension of the polishing disk, the thickness of the polishing cloth is 1.59mm, the density of the polishing cloth is 0.36g/cm3, the compression rate of the polishing cloth is 13.7 percent, the compression elastic rate of the polishing cloth is 89.9 percent, and the hardness of the polishing cloth is 41.5 degrees;
fourthly, placing the wafer with the three-junction gallium arsenide epitaxial layer in the hole without the wax pad with the front surface facing upwards;
fifthly, clamping the pressurizing block on a rotary guide wheel, wherein the three-junction gallium arsenide epitaxial layer is tightly attached to the upper end surface of the polishing cloth, executing a self-checking program, and checking the self-rotating condition of the pressurizing block and the wafer, wherein the specific process comprises the following steps:
firstly), pressurizing the pressurized block for 5s to 3-8 kg at constant pressure for 15s, and simultaneously delivering deionized water to the upper end surface of the polishing cloth by a liquid applying pipe at a flow rate of 5-10 ml/s,
secondly), observing whether a chip running phenomenon exists, taking down the pressurizing chunk after the self-checking program is finished, observing the surface condition of the chip, if all the conditions are normal, proving that the equipment operates normally, and continuing the following normal process flow;
and sixthly, executing a thickness removal process program after the self-checking program is executed, wherein the specific process is as follows:
firstly), clamping the pressurizing block on the rotating guide wheel, wherein the wafer with the triple-junction gallium arsenide epitaxial layer is placed in the hole without the wax pad with the front surface facing upwards, the epitaxial layer surface is attached to the upper end surface of the polishing cloth on the polishing disk,
secondly), pressurizing for 5s under 5-8 kg,
thirdly), delivering the first polishing solution by a solution applying pipe, wherein the flow rate is 5-10 ml/s, the time is 3-8 s,
fourthly), after applying the polishing solution for 3 to 8 seconds, starting the polishing disc, accelerating for 3 seconds until the rotating speed reaches 15 to 50rpm, starting timing when the rotating speed is stable, reducing the rotating speed of the polishing disc after operating for 20 to 50 seconds, closing the polishing solution when the rotating speed is reduced to 0rpm after decelerating for 3 seconds, taking down the pressurizing block, washing the epitaxial surface with deionized water for 5 to 20 seconds,
fifthly), washing the polishing cloth with deionized water for 5-20 s, wherein the rotation speed of the polishing disc is 20-50 rpm;
and seventhly, executing a surface fine treatment process program, wherein the specific process is as follows:
firstly), clamping the pressurizing block on the rotating guide wheel,
secondly), pressurizing the pressurizing block for 5s under the pressure of 1-8 kg,
thirdly), simultaneously delivering the second polishing solution through a liquid delivery pipe with the flow rate of 3-10 ml/s,
fourthly), after polishing liquid is applied for 3-8 s, starting a polishing disc, accelerating for 3s, rotating at 10-20 rpm, starting timing when the rotating speed is stable, reducing the rotating speed of the polishing disc after running for 60-300 s, reducing the speed for 3s to 0rpm, closing the polishing liquid, taking down a pressurizing block, washing an epitaxial surface with deionized water, and flushing for 5-20 s;
taking out the wafer from the wax-free pad, putting the wafer into a cleaning basket, overflowing and standing for 10s, and cleaning;
ninth step, because there are organic matter and local chemical reaction layer on the surface of the processed wafer, in order to better check the surface quality of the wafer, it needs to use alkaline chemical cleaning liquid and deionized water to carry out megasonic cleaning machine immersion cleaning, the concrete steps are as follows:
one), the whole basket of wafer carries out alkaline chemical cleaning liquid immersion cleaning, and it is long 120 ~ 1000s, and alkaline chemical cleaning liquid ratio is surfactant: KOH: deionized water =1:2:200,
secondly), washing with deionized water for 60-200 s;
step ten, drying, wherein the program is divided into 3 sections, the total time is 180-440 s, and the method specifically comprises the following steps:
first), rotating and spraying at 1000-1800 rpm for 60-120 s,
second), spin-drying at 1200-1800 rpm for 60-200 s,
thirdly, drying at the rotation speed of 500-1500 rpm for 60-120 s;
and step ten, respectively carrying out surface quality and overall flatness inspection on the polished wafer.
The method has the advantages that the problem of nano-scale polishing of the surface of the triple-junction gallium arsenide epitaxial layer is solved, the surface roughness of the epitaxial layer is guaranteed to be below 1 nanometer, the overall flatness is controlled to be below 1 mu m, the maximum value of the local flatness of every 4 square micrometers is smaller than 1.5 mu m, the average value is smaller than 1 mu m, and the surface roughness is smaller than 1 nm.
Drawings
FIG. 1 is a schematic view of a polishing structure according to the present invention;
FIG. 2 is a top view of the structure of the present invention;
FIG. 3 is a process of the present inventionFlow pathFigure (a).
Detailed Description
The invention is further described below with reference to fig. 1, 2 and 3.
Example one
A process method for the surface planarization treatment of a triple-junction gallium arsenide epitaxial layer is carried out according to the following steps:
step one, preparing polishing solution, wherein the polishing solution I: weighing 15L of deionized water by using a 5L measuring cup, pouring the deionized water into a clean polishing solution barrel, respectively weighing 160g of chloride powder, 180g of thiosulfide powder, 270g of polyphosphate powder and 120g of bicarbonate powder by using a 0.01g electronic scale, pouring the weighed materials into 15L of deionized water, and stirring the materials for 10min by using a stirrer at 700 rpm; polishing solution two: weighing 15L of deionized water by using a 5L measuring cup, pouring the deionized water into a clean polishing solution barrel, weighing 2000ml of SiO2 particle solution with the particle size of 85 mu m by using a 1000ml measuring cup, pouring the SiO2 particle solution into the 15L of deionized water, and clockwise stirring by using a glass rod for 10 circles;
secondly, sticking a wax-free pad 1 on the upper end face of the customized pressurizing chunk 2, wherein the wax-free pad 1 is made of damping cloth and has the thickness of 1200 mu m, the diameter of an outer ring is 101mm, the diameter of an inner ring is 100.3mm, and the depth of a central blind hole = the thickness of a wafer 0.75 +/-5 mu m;
thirdly, attaching polishing cloth 4 to the upper end face of a polishing disk 3, wherein the size of the polishing disk is 37cm (namely 14.6 "), the external size of the polishing cloth is the same as that of the polishing disk 3, the thickness of the polishing cloth is 1.59mm, the density of the polishing cloth is 0.36g/cm3, the compression rate of the polishing cloth is 13.7%, the compression elasticity rate of the polishing cloth is 89.9%, the hardness of the polishing cloth is 41.5 degrees, and the model number of the polishing cloth is 4300N;
fourthly, the pressurizing module 2 is clamped on a rotating guide wheel 6, wherein the three-junction gallium arsenide epitaxial layer is tightly attached to the polishing cloth 4 on the polishing disc 3, a self-checking program is executed, and the self-rotating condition of the pressurizing module 2 and the wafer is checked;
fifthly, clamping the pressurizing module 2 on a rotary guide wheel 6, wherein the epitaxial layer surface of the triple-junction gallium arsenide is tightly attached to the polishing cloth 4 on the polishing disc 3, inflating and pressurizing for 5s to 5kg of pressure and 15s of constant pressure, and meanwhile, the liquid applying pipe 5 sends deionized water with the flow rate of 8 ml/s; observing whether a chip running phenomenon exists or not, taking down the pressurizing block after the self-checking program is finished, observing the surface condition of the wafer, and if all the conditions are normal, proving that the equipment runs normally and carrying out a normal process flow;
sixthly, executing a thickness removal process,
(1) the pressurizing module 2 is clamped on a rotating guide wheel 6, wherein the wafer with the triple-junction gallium arsenide epitaxial layer is placed in the blind hole of the wax-free pad 1 with the front surface facing upwards, the epitaxial layer surface is attached to the polishing cloth 4 on the polishing disk 3,
(2) pressurizing for 5s until the pressure reaches 6.7 kg; the liquid applying pipe 5 sends the first polishing liquid with the flow rate of 6ml/s,
(3) after applying the polishing solution for 5s, starting the polishing disk 3, accelerating for 3s, rotating at 30rpm, starting when the rotating speed is increased to 30rpm, reducing the rotating speed of the polishing disk after running for 35s, decelerating for 3s, closing the polishing solution when the rotating speed is reduced to 0rpm, taking down the pressurizing block 2, washing the epitaxial surface with deionized water, flushing for 15s,
(4) washing the polishing cloth 4 by using deionized water for 10s, wherein the rotating speed of the polishing disc is 40 rpm;
the seventh step, executing the surface fine processing process program,
(1) the pressurizing block 2 and the wafer processed by the thickness removing process are placed on the polishing cloth 4,
(2) pressurizing the pressurizing block 2 for 5s and 3 kg; the liquid applying pipe 5 sends the second polishing solution with the flow rate of 8.6ml/s,
(3) after applying the polishing solution for 5s, starting the polishing disc 3, accelerating for 3s at a rotating speed of 12.6rpm, starting the time when the rotating speed is increased to 12.6rpm, reducing the rotating speed of the polishing disc after operating for 120s, decelerating for 3s, closing the polishing solution when the rotating speed is reduced to 0rpm, taking down the pressurizing block 2, washing the epitaxial surface with deionized water, and flushing for 15 s;
and eighthly, taking out the wafer from the wax-free pad 1, putting the wafer into a white basket, overflowing and standing for 10s, and then cleaning.
Ninth step, because there are organic matter and local chemical reaction layer on the surface of the processed wafer, in order to better check the surface quality of the wafer, it needs to use alkaline chemical cleaning liquid and deionized water to carry out megasonic cleaning machine immersion cleaning, the concrete steps are as follows:
1) the whole basket of the wafer is soaked in alkaline chemical cleaning liquid for 600s, and the proportion of the alkaline chemical cleaning liquid is surfactant: KOH: deionized water =1:2:200,
2) washing with deionized water for 150 s;
step ten, drying, wherein the program is divided into 3 sections, the total time length is 350s, and the method specifically comprises the following steps:
1) rotating and spraying at 1600rpm for 100s,
2) spin-drying at 1400rpm for 150s,
3) drying at the rotation speed of 1000rpm for 100 s;
and step ten, respectively carrying out surface quality and overall flatness inspection on the polished wafer.
Example two
The second embodiment is different from the first embodiment in that: step one, the deionized water content in the polishing solution one is 10L, and other steps and parameters are the same as those in the first embodiment.
EXAMPLE III
The third embodiment is different from the first embodiment in that: the polishing cloth 2 in the third step was 728NX, 1.31 thick, and 50.5 ° hard, and other steps and parameters were the same as in the first example.
Claims (1)
1. A process method for the surface planarization treatment of a triple-junction gallium arsenide epitaxial layer is characterized by comprising the following steps: adopts a grinding and polishing machine model LP50 of Loctitech company in England, and the process method comprises the following steps,
step one, preparing polishing solution, wherein the polishing solution I: pouring 15L of deionized water into a clean polishing solution barrel, weighing 100-200 g of chloride powder, 150g of thiosulfide powder, 100-300 g of polyphosphate powder and 40-150 g of bicarbonate powder by using a 0.01g electronic scale respectively, pouring into 15L of deionized water, stirring for 10min by using a stirrer at 700rpm, and obtaining a second polishing solution: 15L of deionized water is poured into a clean polishing solution barrel, and a 1000ml measuring cup is used for weighing SiO with the particle size of 85 mu m2Pouring 1-2L of the particle solution into 15L of deionized water, and stirring clockwise for 10 circles by using a glass rod;
secondly, sticking a wax-free pad (1) on the bottom surface of the pressurizing block (2), wherein the wax-free pad (1) is a round sheet made of damping cloth and provided with a blind hole in the center, and is 1200 mu m in thickness, 101mm in outer ring diameter, 100.3mm in inner ring diameter and 0.75 +/-5 mu m in hole depth = wafer thickness;
thirdly, attaching polishing cloth (4) to a polishing disk (3), wherein the size of the polishing disk is 14.6% when the polishing disk is 37cm, the external size of the polishing cloth is the same as the external size of the polishing disk (3), the thickness of the polishing cloth is 1.59mm, the density of the polishing cloth is 0.36g/cm3, the compression rate is 13.7%, the compression elasticity is 89.9%, and the hardness is 41.5 degrees;
fourthly, placing the wafer with the three-junction gallium arsenide epitaxial layer in the hole of the wax-free pad (1) with the front face upward;
fifthly, clamping the pressurizing block (2) on a rotary guide wheel (6), wherein the three-junction gallium arsenide epitaxial layer is tightly attached to the upper end face of the polishing cloth (4), executing a self-checking program, and checking the spinning conditions of the pressurizing block and the wafer, wherein the specific process comprises the following steps:
firstly), pressurizing the pressurizing block (2) for 5s to 3-8 kg at constant pressure for 15s, and simultaneously delivering deionized water to the upper end surface of the polishing cloth (4) by the liquid applying pipe (5) at a flow rate of 5-10 ml/s,
secondly), observing whether a chip running phenomenon exists, taking down the pressurizing chunk after the self-checking program is finished, observing the surface condition of the chip, if all the conditions are normal, proving that the equipment operates normally, and continuing the following normal process flow;
and sixthly, executing a thickness removal process program after the self-checking program is executed, wherein the specific process is as follows:
firstly, a pressure block (2) is clamped on a rotary guide wheel (6), wherein a wafer with a three-junction gallium arsenide epitaxial layer is placed in a hole of a wax-free pad (1) in an upward mode, the epitaxial layer is attached to the upper end face of a polishing cloth (4) on a polishing disc (3),
secondly), pressurizing for 5s under 5-8 kg,
thirdly, the liquid applying pipe (5) sends the first polishing liquid with the flow rate of 5-10 ml/s and the time of 3-8 s,
fourthly), after 3 to 8 seconds of polishing solution application, starting the polishing disk (3), accelerating for 3 seconds until the rotating speed reaches 15 to 50rpm, starting timing when the rotating speed is stable, reducing the rotating speed of the polishing disk after 20 to 50 seconds of operation, closing the polishing solution when the rotating speed is reduced to 0rpm after 3 seconds of deceleration, taking down the pressurizing block (2), washing the epitaxial surface with deionized water for 5 to 20 seconds of flushing time,
fifthly), washing the polishing cloth (4) by using deionized water, wherein the washing time is 5-20 s, and the rotating speed of a polishing disc is 20-50 rpm;
and seventhly, executing a surface fine treatment process program, wherein the specific process is as follows:
firstly, the pressurizing block (2) is clamped on the rotating guide wheel (6),
secondly), pressurizing the pressurizing block (2) for 5s under the pressure of 1-8 kg,
thirdly), simultaneously, the liquid applying pipe (5) sends the second polishing solution with the flow rate of 3-10 ml/s,
fourthly), after the polishing solution is applied for 3 to 8 seconds, starting the polishing disc (3), accelerating for 3 seconds, rotating at 10 to 20rpm, starting timing when the rotating speed is stable, reducing the rotating speed of the polishing disc after running for 60 to 300 seconds, reducing the speed for 3 seconds to 0rpm, closing the polishing solution, taking down the pressurizing block (2), washing the epitaxial surface with deionized water, and flushing for 5 to 20 seconds;
eighthly, taking out the wafer from the wax-free pad (1), putting the wafer into a cleaning basket, overflowing and standing for 10s, and cleaning;
ninth step, because there are organic matter and local chemical reaction layer on the surface of the processed wafer, in order to better check the surface quality of the wafer, it needs to use alkaline chemical cleaning liquid and deionized water to carry out megasonic cleaning machine immersion cleaning, the concrete steps are as follows:
one), the whole basket of wafer carries out alkaline chemical cleaning liquid immersion cleaning, and it is long 120 ~ 1000s, and alkaline chemical cleaning liquid ratio is surfactant: KOH: deionized water =1:2:200,
secondly), washing with deionized water for 60-200 s;
step ten, drying, wherein the program is divided into 3 sections, the total time is 180-440 s, and the method specifically comprises the following steps:
first), rotating and spraying at 1000-1800 rpm for 60-120 s,
second), spin-drying at 1200-1800 rpm for 60-200 s,
thirdly, drying at the rotation speed of 500-1500 rpm for 60-120 s;
and step ten, respectively carrying out surface quality and overall flatness inspection on the polished wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911060784.6A CN110695842B (en) | 2019-11-01 | 2019-11-01 | Process method for surface planarization treatment of triple-junction gallium arsenide epitaxial layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911060784.6A CN110695842B (en) | 2019-11-01 | 2019-11-01 | Process method for surface planarization treatment of triple-junction gallium arsenide epitaxial layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110695842A CN110695842A (en) | 2020-01-17 |
| CN110695842B true CN110695842B (en) | 2021-04-09 |
Family
ID=69202314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911060784.6A Active CN110695842B (en) | 2019-11-01 | 2019-11-01 | Process method for surface planarization treatment of triple-junction gallium arsenide epitaxial layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110695842B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111633563B (en) * | 2020-06-15 | 2021-09-14 | 衢州学院 | Polishing medium preparation device and method, and mechanical chemical polishing equipment and method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100428419C (en) * | 2004-12-08 | 2008-10-22 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
| JP2009111094A (en) * | 2007-10-29 | 2009-05-21 | Covalent Materials Corp | Wafer mirror polishing method |
| US8377825B2 (en) * | 2009-10-30 | 2013-02-19 | Corning Incorporated | Semiconductor wafer re-use using chemical mechanical polishing |
| KR20110095458A (en) * | 2010-02-19 | 2011-08-25 | 네오세미테크 주식회사 | Method of removing the backlash in double side polishing for 4 inch gaas wafers |
| CN102543665B (en) * | 2010-12-07 | 2014-01-01 | 中国科学院微电子研究所 | Improved rapid thinning method of gallium arsenide substrate |
| JP2013077661A (en) * | 2011-09-30 | 2013-04-25 | Hitachi Cable Ltd | Surface polishing method of compound semiconductor substrate |
| CN107978522B (en) * | 2017-12-11 | 2019-09-03 | 中国电子科技集团公司第四十六研究所 | A kind of rough polishing technique reducing GaAs double-polished chip integral smoothness |
-
2019
- 2019-11-01 CN CN201911060784.6A patent/CN110695842B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110695842A (en) | 2020-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103606517A (en) | Silicon chip thinning method | |
| CN103614778A (en) | Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell | |
| WO2019242242A1 (en) | Preparation method for surface micro and nano composite structure of mono-crystalline cell | |
| CN103009234A (en) | Polishing process of heavily arsenic-doped monocrystalline silicon polished wafer with improvement of surface granularity | |
| CN110695842B (en) | Process method for surface planarization treatment of triple-junction gallium arsenide epitaxial layer | |
| CN104711671B (en) | Crucible coating layer structure, preparation method and crucible | |
| CN105014520B (en) | A kind of sapphire substrate sheet immersion cmp method | |
| CN105081893A (en) | Ultrathin Ge single crystal substrate material and preparation method thereof | |
| CN103029026B (en) | Monocrystalline silicon wafer cleaning method with ultrahigh cleaning capacity | |
| CN107287597A (en) | Wool-making agent of monocrystalline silicon surface processing and preparation method thereof and application method | |
| CN107904663A (en) | A kind of crystalline silicon polishing additive and its application method for crystal silicon polishing | |
| CN114310653B (en) | Waxed patch technology of high-quality geometric parameter polished wafer | |
| CN109093867A (en) | Solar energy single crystal silicon rod graph thinning cutting method | |
| CN107978522B (en) | A kind of rough polishing technique reducing GaAs double-polished chip integral smoothness | |
| CN105826410B (en) | A kind of polysilicon etching method for eliminating Buddha's warrior attendant wire cutting trace | |
| CN110788739A (en) | Polishing method of indium antimonide single crystal wafer | |
| CN109972204A (en) | Ultra-thin super optical flat and the method for preparing the ultra-thin super optical flat | |
| CN112466998B (en) | Manufacturing method of four-inch 80-micron gallium arsenide double polished wafer | |
| CN103158057A (en) | Method and testing system for determining chemical mechanical polishing break point of phase-change material | |
| CN107686779A (en) | Semiconductor cleaning agent for silicon microsection and preparation method thereof | |
| CN101934493A (en) | Polishing process of ultrathin zone-melting silicon polished wafer | |
| CN108321084A (en) | A kind of solar cell dicing method | |
| CN107964685A (en) | A kind of etching method of monocrystalline silicon piece | |
| TWI538043B (en) | Method for manufacturing bowl shape surface structures of single-crystalline silicon substrates and a single-crystalline silicon substrate with bowl shape surface structures | |
| CN202695396U (en) | Processing system for high-power device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |