CN108321084A - A kind of solar cell dicing method - Google Patents
A kind of solar cell dicing method Download PDFInfo
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- CN108321084A CN108321084A CN201711470803.3A CN201711470803A CN108321084A CN 108321084 A CN108321084 A CN 108321084A CN 201711470803 A CN201711470803 A CN 201711470803A CN 108321084 A CN108321084 A CN 108321084A
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- cell piece
- scribing
- groove
- solar cell
- battery
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 17
- 238000007740 vapor deposition Methods 0.000 claims abstract description 11
- 230000000717 retained effect Effects 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims 1
- 230000011218 segmentation Effects 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 description 22
- 238000005260 corrosion Methods 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 11
- 238000002161 passivation Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of solar cell dicing method, it is included in and cell piece is passivated before burn into vapor deposition antireflective coating, the position of scribing is needed to draw on side where the main gate line of cell piece disconnected, and other positions of scribing are needed to prepare groove cell piece, the cell piece thickness retained at groove is 50 μm of thickness to cell piece half, and the depth of groove is more than the junction depth of the PN junction of cell piece；And cell piece is passivated burn into vapor deposition antireflective coating after by cell piece at groove sliver.The dicing method can realize the segmentation of solar cell, and the corner retained is fixedly secured large scale battery realization；It has passed through passivating process after paddle-tumble, edge current leakage can be reduced, improve the performance of solar cell；And by the depth for controlling the groove prepared, realizes that the scribing of battery is completed in a scribing, avoid secondary scribing.
Description
Technical field
The invention belongs to solar cell production method technical fields, more particularly, to a kind of solar cell dicing method.
Background technology
Currently, using solar cell as the semiconductor function device of representative, by preparing PN junction in circular semiconductor wafers
The extraction of photogenerated current is realized with electrode, then is separated into individually unit through scribing, finally prepares anti-reflection on every battery
Penetrate film layer.The method that wherein scribing is cut as semiconductor wafer has been widely used in semiconductor applications, common to draw
Sheet mode includes that laser scribing and diamond cutter cut two kinds.
In the production technology of existing battery, by preparing the upper and lower extraction electrode of battery on disk and being added
Gu after, by the way that battery to be divided into according to top electrode figure by scribing the single battery piece of required size, monomer is carried out later
The passivation of battery is corroded and vapor deposition antireflective coating.But for the slim gallium arsenide solar cell of large scale, i.e. thickness is less than 150 μ
M, area is more than 32cm2Gallium arsenide in large size solar cell only bond pad locations be fixed it cannot be guaranteed that product in Vacuum Deposition
It is fixedly secured in film machine, being easy to happen movement makes that upper antireflective coating is deposited at battery main weldering point or on back electrode, and then influences
It welds and generates defective work.To solve the above problems, can in preparation process using rear scribing process design, that is, retain to
Few to be used as fixed edge on one side, the extra corner of scribing removal solves after being carried out again after carrying out vapor deposition antireflective coating.But use this
Afterwards after scribing process, directly it is deposited on disk after antireflective coating and carries out scribing, can to cause battery side due to rear scribing
Edge epitaxial layer defects can not be repaired by corrosion, cause micro-short circuit that battery open circuit voltage is caused to reduce, photoelectric conversion efficiency
Decline.
Invention content
The problem to be solved in the present invention is to provide a kind of solar cell dicing method, solves large scale battery and antireflective is deposited
Fixation problem in membrane process, while the passivation effect of follow-up passivation layer is not influenced.
In order to solve the above technical problems, the technical solution adopted by the present invention is：A kind of solar cell dicing method, is included in
The position of scribing is needed to scratch on side where the main gate line of cell piece before being passivated burn into vapor deposition antireflective coating to cell piece
Other positions of scribing are needed to mark groove with by cell piece, the cell piece thickness retained at groove is 50 μm to cell piece half
Thickness, the depth of groove is more than at the PN junction of cell piece；And to cell piece be passivated burn into vapor deposition antireflective coating it
Afterwards by cell piece from groove sliver.The dicing method can realize the segmentation of solar cell, and complete scribing post-passivation and steam
The method of coated with antireflection film is compared, and can improve the versatility of vapor deposition antireflective coating mold, and the corner retained is to large scale
Battery realization is fixedly secured, and has been saved the process time, has been reduced frock cost；Another aspect and existing rear dicing method phase
Than experienced passivating process after paddle-tumble, edge current leakage can be reduced, improve the performance of solar cell；Meanwhile it is of the invention important
Inventive point is by controlling the gash depth prepared, you can the segmentation that solar cell piece is completed by a scribing, after avoiding
The secondary scribing of sequence, postorder need to only be broken by pressing or hand it is disconnected can be completed sliver, and in the dicing method scribing with prepare it is blunt
Change slot to be integrated, reduces chemical corrosion process, improve technology stability, saved the cost of raw material.
In technical solution, it is preferred that the preparation of groove is cut scribing by cutter and realized.It is slotted using Physical,
Chemical method corrosion isolation channel technology production technology is compared not by using batch and production environment to be limited, stability higher, and not
It needs to carry out corrosion flushing to battery, reduces the breakage rate of product.
In technical solution, it is preferred that the width of cutter is 30-80 μm.
In technical solution, it is preferred that the method that the preparation of groove uses chemical attack.The method for preparing groove can use
The cutting method of physics, the method that existing chemical attack can also be selected.
In technical solution, it is preferred that the method for chemical attack includes：To cell piece need other position photoetching of scribing every
From slot；Corrosion isolation channel obtains groove.It can be to needing the position progress alignment of paddle-tumble, development to obtain the litho pattern of slot, so
Hydrochloric acid and dioxysulfate water (or the stronger acid of the oxidisability such as nitric acid, hydrobromic acid) alternating corrosion is used to obtain corruption in battery edge afterwards
Isolation channel is lost, the active layer of battery portion active layer and edge is kept apart, photoresist is removed, obtains groove.
The invention has the advantages and positive effects that：
1, the present invention solves the fixation during large scale battery vapor deposition antireflective coating using scribing paddle-tumble technology, while not
Influence the passivation effect of follow-up passivation layer.
2, it is slotted with Physical, compares chemical method corrosion isolation channel technology production technology and do not used batch and production
The limitation of environment, stability higher.Corrosion flushing need not be carried out to battery, the breakage rate of product be reduced, simultaneously for not
The versatility that antireflective coating improves large scale battery moulds of industrial equipment is deposited using disk in battery with size.
3, paddle-tumble width of the present invention meets the needs of passivation corrosion cleaning in subsequent process enough, can expire during drying
Foot removes corrosive liquid clean.
4, present invention omits secondary scribing processes, save a large amount of working hours, improve production efficiency, while sliver process
Passivating film is not caused to damage.
5, The present invention reduces the dosage of photoresist and various chemical corrosion liquids, waste liquid is reduced while cost-effective
Discharge.
Description of the drawings
Fig. 1 is the saw blade tip shapes schematic diagram used in the embodiment of the present invention one.
Fig. 2 is the structural schematic diagram of cell piece after scribing in the embodiment of the present invention one.
Fig. 3 is the structural schematic diagram of the sliver mold in the embodiment of the present invention one.
Specific implementation mode
Several embodiments of the present invention are described in detail below：
Embodiment one
A kind of solar cell dicing method described in the present embodiment, is as follows：
1, scribing：
Upper/lower electrode battery will have been prepared and be placed on scribing machine vacuum cup fixed, calibration X-axis Y-axis and horizontal position.
According to required size, scribing parameter is set, wherein：Knife up (i.e. paddle-tumble lower end is away from workbench distance) is set as 50 μm of -1/2 chip
Thickness, saw blade select the cutter of blade as shown in Figure 1, blade widths a to choose 30 μm -80 μm.According to battery top electrode figure,
It is scratched at battery main gate line, marking depth slot appropriate in rest part, (member-retaining portion is about at 50 μm of -1/2 wafer thickness
But ensuring that PN junction is scratched) chip after scribing is as shown in Fig. 2, be paddle-tumble position wherein at dotted line.The battery master after scribing
It is removed at side where grid line, remaining edge still has certain mechanical strength.After scribing, blown away on battery with compressed air
Water, release vacuum state, remove epitaxial wafer from sucker, remove the corner by battery main gate line, at this time Circular wafer such as Fig. 2
It is shown.
2, passivation corrosion：
Passivation corrosion uses method in the prior art, is not to do simple introduction herein where the inventive point of the present invention, make
The present invention can be also realized with the method for other passivation corrosion.After scribing, cell piece is placed in carrier and is passivated and corrodes
CAP layers, by hydrochloric acid and dust technology according to 2：1-8：1 is prepared into mix acid liquor, according still further to acid solution and water 1：2-1：8 ratio
Corrosive liquid is configured, battery is placed in corrosive liquid and corrodes 20s, removes the edge damage of scribing processes.It is applied in upper/lower electrode
Glue is protected, by plasma enhanced chemical vapor deposition respectively using ammonia and silane as reaction gas, at the edge of battery
The silicon nitride passivation of upper deposition 70nm~150nm thickness.Corrode CAP layers in the citric acid and hydrogen peroxide corrosive liquid newly configured to visual
Layer corrosion is clean, is cleaned 5-10 times with deionized water, drying or drying product.
3, antireflective coating is deposited：
The process that antireflective coating is deposited also is method in the prior art, only does simple introduction herein, uses other vapor depositions
The method of antireflective coating can also realize the present invention.Battery is placed on the evaporation disc of high vacuum coating unit, by TiO2And Al2O3
It is respectively charged into crucible, closes the door for vacuum chamber of high vacuum coating unit, high vacuum coating unit is vacuumized, vacuum degree is more than
1×10-3Pa starts to be deposited, in battery light-receiving surface successively vapor deposition TiO2Film layer and Al2O350nm-65nm thickness is successively deposited in film layer
TiO2The Al of film layer and 72nm-96nm thickness2O3Film layer completes antireflective coating TiO2/Al2O3Vapor deposition process.
4, sliver：
Battery to antireflective coating was deposited carries out sliver by tool shown in Fig. 3, and cell piece main body is placed on table top
Place, paddle-tumble line alignment edges line, corner to be removed is on the outside of table top.It is firmly pressed downwards in edge, getting rid of corner is needed
Seek the finished battery of size.If paddle-tumble depth can also directly carry out breaking disconnected more deeply.
A kind of solar cell dicing method described in the present embodiment is slotted with Physical, compares chemical method corrosion isolation
For slot technology production technology not by using batch and production environment to be limited, stability higher need not carry out corrosion punching to battery
It washes, reduces the breakage rate of product.
Embodiment two
A kind of solar cell dicing method described in the present embodiment is identical as the implementation other parts in embodiment one,
It the difference is that only the method using chemical attack when preparing groove in the 1st step scribing, the groove for preparing certain depth (is protected
It is about at 50 μm of -1/2 wafer thickness but to ensure that PN junction is scratched to stay part).Steps are as follows for chemical corrosion method paddle-tumble：To scribing
The edge that preceding battery carries out alignment, is developed in battery obtains isolation channel litho pattern, then by hydrochloric acid and dioxysulfate water (or
The stronger acid of the oxidisability such as nitric acid, hydrobromic acid) corrosion battery edge obtain corrosion isolation channel, by battery portion active layer and side
The active layer of edge is kept apart, and is removed photoresist.The method is chemical corrosion method to the common method of solar cell piece ditch slot, this field
The step of technical staff is known that caustic solution specific implementation according to the prior art, in addition to this chemical corrosion method, other
The chemical corrosion method that can obtain above-mentioned groove also can be used.
Several embodiments of the present invention are described in detail above, but the content is only the preferable implementation of the present invention
Example should not be construed as limiting the practical range of the present invention.It is all according to all the changes and improvements made by the present patent application range
Deng should all still fall within the scope of the patent of the present invention.
Claims (5)
1. a kind of solar cell dicing method, it is characterised in that：It is included in and burn into vapor deposition antireflective coating is passivated to cell piece
Before, it needs the position of scribing to draw on side where the main gate line of the cell piece to break, and the cell piece is needed into its of scribing
Groove is prepared at his position, and the cell piece thickness retained at the groove is 50 μm of thickness to the cell piece half, described
The depth of groove is more than the junction depth of the PN junction of the cell piece；And anti-reflection is deposited being passivated burn into the cell piece
It penetrates the cell piece after film from sliver from the groove.
2. solar cell dicing method according to claim 1, it is characterised in that：The preparation of the groove is cut by cutter
Cut scribing realization.
3. solar cell dicing method according to claim 2, it is characterised in that：The width of the cutter is 30-80 μm.
4. solar cell dicing method according to claim 1, it is characterised in that：The preparation of the groove is rotten using chemistry
The method of erosion.
5. solar cell dicing method according to claim 4, it is characterised in that：The method of the chemical attack includes：
Other position photoetching isolation channels of scribing are needed to the cell piece；Corrode the isolation channel and obtains the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711470803.3A CN108321084A (en) | 2017-12-29 | 2017-12-29 | A kind of solar cell dicing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711470803.3A CN108321084A (en) | 2017-12-29 | 2017-12-29 | A kind of solar cell dicing method |
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| Publication Number | Publication Date |
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| CN108321084A true CN108321084A (en) | 2018-07-24 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711470803.3A Pending CN108321084A (en) | 2017-12-29 | 2017-12-29 | A kind of solar cell dicing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109768116A (en) * | 2018-12-25 | 2019-05-17 | 中国电子科技集团公司第十八研究所 | Preparation method of gallium arsenide solar cell |
| CN110416156A (en) * | 2019-07-31 | 2019-11-05 | 常州时创能源科技有限公司 | The preparation process of solar battery fragment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140038339A1 (en) * | 2012-08-06 | 2014-02-06 | Atomic Energy Council-Institute Of Nuclear Energy Research | Process of manufacturing crystalline silicon solar cell |
| CN106653947A (en) * | 2016-12-28 | 2017-05-10 | 中国电子科技集团公司第十八研究所 | Passivation method and preparation method for three-junction gallium arsenide solar cells |
| CN106653874A (en) * | 2016-12-28 | 2017-05-10 | 中国电子科技集团公司第十八研究所 | Realization method for III-V group solar battery evaporated with antireflection film |
-
2017
- 2017-12-29 CN CN201711470803.3A patent/CN108321084A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140038339A1 (en) * | 2012-08-06 | 2014-02-06 | Atomic Energy Council-Institute Of Nuclear Energy Research | Process of manufacturing crystalline silicon solar cell |
| CN106653947A (en) * | 2016-12-28 | 2017-05-10 | 中国电子科技集团公司第十八研究所 | Passivation method and preparation method for three-junction gallium arsenide solar cells |
| CN106653874A (en) * | 2016-12-28 | 2017-05-10 | 中国电子科技集团公司第十八研究所 | Realization method for III-V group solar battery evaporated with antireflection film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109768116A (en) * | 2018-12-25 | 2019-05-17 | 中国电子科技集团公司第十八研究所 | Preparation method of gallium arsenide solar cell |
| CN110416156A (en) * | 2019-07-31 | 2019-11-05 | 常州时创能源科技有限公司 | The preparation process of solar battery fragment |
| CN110416156B (en) * | 2019-07-31 | 2022-04-26 | 常州时创能源股份有限公司 | Preparation process of solar cell slices |
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