CN104638026B - A kind of diamond Schottky-barrier diode and preparation method thereof - Google Patents
A kind of diamond Schottky-barrier diode and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
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- 229910052796 boron Inorganic materials 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- 238000001259 photo etching Methods 0.000 claims description 11
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- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 10
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- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910000085 borane Inorganic materials 0.000 claims description 4
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
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- 238000005229 chemical vapour deposition Methods 0.000 claims 1
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- 238000001657 homoepitaxy Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
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- 229920002120 photoresistant polymer Polymers 0.000 description 4
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- 238000011161 development Methods 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
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- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of diamond Schottky-barrier diode and preparation method thereof, purpose is the Schottky-barrier diode for solving the boron-doping polycrystalline diamond films of existing highly-textured at present, the defects of a large amount of crystal boundaries and dislocation being still inevitably present due to polycrystalline diamond films, and the sunken the problem of combination property of Schottky-barrier diode certainly will be caused to decline.Present invention firstly provides a kind of planar type Schottky barrier diode for intersecting " finger " shape and preparation method thereof, the diode has low turn-on voltage, low reverse current leakage and higher commutating ratio, influence the defects of crystal boundary in polycrystalline diamond films to diode performance can be reduced to minimum, there is remarkable progress.Meanwhile the present invention has the advantages of simple manufacture craft, low manufacture cost, can effectively reduce its manufacturing cost, meets the needs of large-scale industrial production, application, has broad application prospects.
Description
Technical field
The present invention relates to field of semiconductor devices, specially a kind of diamond Schottky-barrier diode and its preparation side
Method, it is a kind of（110）It is orientated diamond Schottky-barrier diode and preparation method thereof.
Background technology
Core of the power semiconductor as power circuit system, which determine the efficiency of system, size, it is applicable
Scope and reliability.At present, most of power semiconductor is made by silicon materials, however as the hair of silicon technology
Exhibition, its device performance have approached the limiting value of silicon materials.In order to meet high temperature, high pressure and powerful application requirement, it is necessary to select
Select more particularly suitable alternate material, such as wide bandgap semiconductor materials.
With traditional wide bandgap semiconductor materials（Such as carborundum, gallium nitride）Compare, diamond has bigger band gap
Width（~ 5.5 eV）, high saturation carrier mobility（3800 cm2/V•s（Hole）With 4500 cm2/V•s（Electronics））, greatly
Breakdown voltage, the features such as high thermal conductivity and high chemical inertness and hardness.Therefore, diamond is to substitute silicon materials
One of ideal material.
Schottky-barrier diode（SBD）Barrier height be less than PN junction potential barrier, its cut-in voltage and conduction voltage drop compared with
PiN diodes are small, can reduce the power attenuation in circuit.In addition, Schottky-barrier diode is as majority carrier device, its
In the absence of the injection and storage of minority carrier, the reacting recovery time is short, and switching speed is fast, simultaneously because junction capacity is relatively low, can
The inverter, converter, pfc circuit of power conversion, and the sun need to be carried out by being widely used in electric automobile, hybrid electric vehicle etc.
The fields such as rectification, inversion are obtained in the new energy such as energy, wind energy.
P-type homoepitaxy monocrystalline diamond film is shallower due to the acceptor level of boron atom（E A = 0.37 eV）, it is easy to big
In the range of control the parameters such as its resistivity and carrier mobility, therefore, the research of current diamond junction device is mainly concentrated
In the metal Schottky-based barrier diode based on p-type homoepitaxy single-crystal diamond.However, HPHT is mono- used by homoepitaxy
Diamond substrate is expensive, and size is smaller（It is generally only 3 × 3 × 0.5 mm）, it is unfavorable for outside with p-type homogeneity
Prolong the extensive of monocrystalline diamond film Schottky-barrier diode to widely use.
In recent years, numerous studies show：Heteroepitaxial deposition highly-textured orientation polycrystalline diamond films it is all
More physical properties and homoepitaxy single-crystal diamond are very close.And compared with homoepitaxial deposition technology, heteroepitaxial deposition
Technology have it is economical, general, can large area the characteristics of preparing, this is by the p-type hetero-epitaxy Buddha's warrior attendant to be orientated with highly-textured
The extensive use of stone Schottky-barrier diode provides reliable technical guarantee.
However, although the physical property of the polycrystalline diamond films with highly-textured is thin similar to single-crystal diamond
Film, but compared with monocrystalline diamond film, because polycrystalline diamond films are still inevitably present a large amount of crystal boundaries and dislocation etc.
Defect, and these defects certainly will cause the combination property of Schottky-barrier diode to decline.
Therefore, there is an urgent need to a kind of new device, to solve the above problems.
The content of the invention
Therefore, knot of the applicant to the Schottky-barrier diode of the boron-doping polycrystalline diamond films based on highly-textured
Structure optimizes design, influence the defects of crystal boundary in polycrystalline diamond films to its performance is reduced into minimum, effectively
Lift its combination property.
The goal of the invention of the present invention is：For Xiao of the boron-doping polycrystalline diamond films of current existing highly-textured
Special base barrier diode, the defects of being still inevitably present a large amount of crystal boundaries and dislocation due to polycrystalline diamond films, and fall into gesture
Must cause Schottky-barrier diode combination property decline the problem of, there is provided a kind of diamond Schottky-barrier diode and its
Preparation method., should present invention firstly provides a kind of planar type Schottky barrier diode for intersecting " finger " shape and preparation method thereof
Diode has low turn-on voltage, low reverse current leakage and higher commutating ratio, can be by the crystal boundary in polycrystalline diamond films
The defects of influence to diode behavior be reduced to minimum, there is remarkable progress.Meanwhile the present invention has making work
The advantages of skill is simple, low manufacture cost, can effectively reduce its manufacturing cost, meet large-scale industrial production, the need of application
Ask, have broad application prospects.
To achieve these goals, the present invention adopts the following technical scheme that：
A kind of diamond Schottky-barrier diode, including it is monocrystalline silicon substrate, boron doped（110）It is orientated diamond extension
Layer, interdigital electrode, it is described boron doped（110）Orientation diamond epitaxial layer is arranged on monocrystalline silicon substrate, the intersection
Finger electrode is arranged on boron doped（110）It is orientated in diamond epi-layer surface；
The interdigital electrode includes Schottky contact electrode, Ohm contact electrode, the Schottky contact electrode, Europe
Nurse contact electrode is respectively positioned at boron doped（110）It is orientated diamond epi-layer surface, the Schottky contact electrode and ohm
It is distributed between contact electrode in interdigital.
The reverse leakage current of the diode can as little as 1 × 10-8 A, cut-in voltage can as little as 3 V, commutating ratio is up to 104。
Also include the first lead being connected with Schottky contact electrode, the second lead being connected with Ohm contact electrode, institute
Stating Schottky contact electrode includes the first main electrode, several first finger electrodes being connected with the first main electrode, and described ohm connects
Touched electrode includes the second main electrode, several second finger electrodes being connected with the second main electrode, and described first refers to electrode and second
Refer to and be distributed in horizontal cross finger-like between electrode, first main electrode is connected with the first lead, second main electrode and the
Two leads are connected.
It is described boron doped（110）It is orientated in diamond epitaxial layer, the doping concentration of boron atom is 50 ~ 500 ppm, should
The thickness of epitaxial layer is 5 ~ 15 μm.
First main electrode, the first finger electrode, the first lead, the second lead are respectively adopted Au and are prepared, the Europe
Nurse contact electrode is prepared by Ti layers, the Au layers being arranged on Ti layers.
In the Ohm contact electrode, the thickness of Ti layers is 20 ~ 40 nm, and the thickness of Au layers is 20 ~ 30 nm.
First main electrode, the width of the second main electrode are respectively 0.1 ~ 0.3 mm, and first refers to electrode, the second finger electricity
The width of pole is respectively 0.008 ~ 0.1 mm, adjacent first refer to electrode and second refer to spacing between electrode for 0.072 ~
0.9 mm。
It is described boron doped（110）Be orientated diamond epitaxial layer prepared using MPCVD method and
Into the reactant gas source used is the one or more in methane, hydrogen, borine.
The preparation method of aforementioned diodes, comprises the following steps：
（1）Deposited on monocrystalline silicon substrate boron doped（110）It is orientated diamond epitaxial layer；
（2）Successively using photoetching process, electron beam evaporation deposition method, boron doped（110）It is orientated diamond epitaxial layer table
The bright Ti layers for preparing Ohm contact electrode；
（3）Through step（2）Afterwards, successively using photoetching process, electron beam evaporation deposition method, boron doped（110）Orientation gold
Hard rock epitaxial layer shows to prepare Au layers, the Schottky contact electrode of Ohm contact electrode, finally boron doped（110）Orientation gold
The interdigital electrode of Schottky contact electrode and Ohm contact electrode composition is formed in hard rock epi-layer surface；
（4）The first lead is correspondingly arranged on Schottky contact electrode, Ohm contact electrode in preparation respectively, second is drawn
Line, and be packaged, produce diode.
The step（1）In, boron doping is deposited on monocrystalline silicon substrate using MPCVD method
's（110）Diamond epitaxial layer is orientated, the thickness of the epitaxial layer is 5 ~ 15 μm, the doping concentration of boron atom in epitaxial layer
For 50 ~ 500 ppm.
The step（1）In, microwave power is the W of 1400 W ~ 2400, and operating air pressure be 10 ~ 14 kPa, methane and
Hydrogen flowing quantity ratio is 1:99.
The step（2）In, the preparation process of the Ti layers of Ohm contact electrode is as follows：First under the auxiliary of mask plate,
Pattern structure is formed on the surface of epitaxial layer；Electron beam evaporation plating metal Ti layers are used again, and the thickness of Ti layers is 20 ~ 40
nm；After the completion of prepared by metal Ti layers, then under 500 ~ 700 DEG C, nitrogen atmosphere protection, short annealing, you can.
Under the auxiliary of mask plate, pattern structure is formed on the surface of epitaxial layer using photoetching, development or etching.
The step（3）In, under the auxiliary of mask blank, the Au layers that Ohm contact electrode is carved using photoetching process are whole
Body pattern, Schottky contact electrode global pattern, the Au layers global pattern of the Ohm contact electrode are located at Ohm contact electrode
Ti layers on；Electron beam evaporation plating metal Au films are used again, and after the completion of metal Au film preparations, then at 300 DEG C, nitrogen atmosphere is protected
Under, short annealing, complete boron doped（110）Orientation diamond epitaxial layer shows to prepare the Au layers of Ohm contact electrode, Xiao
Te Ji contacts the preparation of electrode；Wherein, the thickness of metal Au films is 20 ~ 30 nm.
In the step 4, the first lead is set, on Ohm contact electrode on Schottky contact electrode using electric welding respectively
Second lead is set.
For foregoing problems, the present invention provides a kind of diamond Schottky-barrier diode and preparation method thereof.The present invention
Diode using boron doped（110）Be orientated diamond epitaxial layer, its compared with the single crystal diamond layer of existing homoepitaxy,
The area using making diode of the epitaxial layer is bigger（2 inches uniformly heavy can be realized under current process conditions
Product, and the size of homoepitaxy single crystal diamond layer is about 3 × 3 mm）, therefore, the present invention can realize the Xiao Te of large area
The making of base barrier diode.Meanwhile in the present invention, in interdigital point between Schottky contact electrode and Ohm contact electrode
Cloth, interdigital electrode is formed, using the structure, to two the defects of the crystal boundary that can be effectively reduced in polycrystalline diamond epitaxial layer
The influence of pole pipe performance.After measured, diamond Schottky-barrier diode of the invention has low conducting voltage, low reverse leakage
The advantages that stream and higher commutating ratio, compared with the prior art, have significant progressive.
Meanwhile the present invention provides a kind of preparation method, this method uses the simple photoetching-plated film-etching of two steps, you can complete
Into the making of diode, manufacture craft is simple, quick, disclosure satisfy that the needs of industrialization large-scale production, should with wide
Use prospect.
In summary, the structure design of diamond Schottky-barrier diode of the present invention is more flexible, and preparation technology is simple,
Excellent electrology characteristic with low turn-on voltage, low reverse current leakage and higher commutating ratio.
Brief description of the drawings
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein：
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the front view of diode of the present invention.
Fig. 3 is Fig. 2 top view.
Fig. 4 is the I-V characteristic figure of Schottky-barrier diode provided by the invention.
Marked in figure：1 is monocrystalline silicon substrate, and 2 be boron doped（110）Diamond epitaxial layer is orientated, 3 be the first main electricity
Pole, 4 be the first finger electrode, and 5 be the first main electrode, and 6 be the first finger electrode.
Embodiment
All features disclosed in this specification, or disclosed all methods or during the step of, except mutually exclusive
Feature and/or step beyond, can combine in any way.
Any feature disclosed in this specification, unless specifically stated otherwise, can be equivalent by other or with similar purpose
Alternative features are replaced.I.e., unless specifically stated otherwise, each feature is an example in a series of equivalent or similar characteristics
.Simple and clear in order to illustrate, accompanying drawing simply illustrates to general structure, eliminates the well-known details in part
Illustrate, to avoid unnecessary fuzzy expression.The sectional view of accompanying drawing is not drawn in strict accordance with actual ratio, some regional areas
It may be exaggerated to help to read and understand the present invention.
Embodiment 1
The Making programme of the present invention is as follows.
Step 100：Grown on single crystal Si substrate（110）It is orientated boron-doped diamond epitaxial layer.
On the single crystal Si substrate using super nanocrystalline diamond particle ultrasonic wave added forming core, microwave plasma is utilized in advance
Body chemical vapor phase growing method epitaxial growth is boron doped（110）It is orientated diamond epitaxial layer.Wherein, microwave plasma chemical gas
The deposition parameter of phase sedimentation is：Microwave power is 1800 W, and operating air pressure 12kPa, methane is 1 with hydrogen flowing quantity ratio:99,
Boron atom（Borine is boron-doping source）Doping concentration is 100 ppm, and growth time is 5 hours.Under the conditions of being somebody's turn to do,（110）It is orientated Buddha's warrior attendant
The thickness of stone epitaxial layer is 6 μm.
Step 200：It is boron doped（110）It is orientated the processing of diamond epi-layer surface and coating photoresist.
Prepared by step 100 boron doped（110）Orientation diamond extension is placed on dense H2SO4With dense HNO3Mixing
Solution（Dense H2SO4With dense HNO3Volume ratio be 3:1）In, processing 30 minutes is boiled, surface p-type is terminated to remove possible hydrogen
Conductive layer, form oxygen and terminate surface state, be then respectively cleaned by ultrasonic 15 minutes with acetone, deionized water respectively；Then, utilization is even
Glue machine forms uniform photoresist in the diamond epi-layer surface after ultrasonic cleaning（Positive photoresist）Film, thickness are 4 μm, and
30 minutes are incubated at 100 DEG C, to remove the solvent in glued membrane.
Step 300：After photoetching, development are carried out on diamond epitaxial layer, pattern structure is formed.
Using the Ohm contact electrode photo mask board of pre-production, adjusted by litho machine outside mask plate and diamond
After the distance for prolonging layer, using 254 nm ultraviolet photoetchings caused by high-pressure sodium lamp；Then use acetone as developer solution, will not by
The photoresist dissolving of exposure, produces required Ohm contact electrode figure.
Step 400：The Ti layers of Ohm contact electrode are made on diamond epitaxial layer.
Using electron beam evaporation deposition technology, Ti metals, electronics are deposited on the figure for be lithographically formed Ohm contact electrode
Beam line is 200 mA, and the time is 15 minutes, and resulting plating Ti thickness degree is 30 nm.After the completion of prepared by metal Ti layers,
Again under 550 DEG C and nitrogen atmosphere protection, short annealing 20 minutes, you can.
Step 500：On the diamond epitaxial layer of Ti layers for having made Ohm contact electrode, one-step method makes ohm and connect
Photoengraving pattern, the photoengraving pattern of Schottky contact electrode of the Au layers of touched electrode.
Utilize the overall electrode of pre-production（Include Ohmic contact and Schottky basis）Photo mask board, using identical
Photoetching, development and post bake technique, produce photoengraving pattern, the light of Schottky contact electrode of the Au layers containing Ohm contact electrode
Needle drawing case.
Step 600：Au layers, the Schottky contact electrode of Ohm contact electrode are made on diamond epitaxial layer.
Using electron beam evaporation deposition technology, the plating Au on the photoengraving pattern made by step 500, electron beam line is
100 mA, time are 10 minutes, and the Au film thicknesses of institute's plating are 20 nm.After the completion of metal Au film preparations, then in 300 DEG C and nitrogen
Under gas atmosphere protection, short annealing 20 minutes, complete boron doped（110）Orientation diamond epitaxial layer shows that preparing ohm connects
The preparation of the Au layers, Schottky contact electrode of touched electrode, finally boron doped（110）It is orientated shape in diamond epi-layer surface
Into Schottky contact electrode and the interdigital electrode of Ohm contact electrode composition.
Fig. 1 is the structural representation of the present invention, and Fig. 2,3 are respectively front view, the top view of diode that the present invention makes.
As illustrated, the diamond Schottky-barrier diode includes monocrystalline silicon substrate, boron doped（110）It is orientated Buddha's warrior attendant
Stone epitaxial layer, interdigital electrode, it is boron doped（110）Orientation diamond epitaxial layer is arranged on monocrystalline silicon substrate, interdigital
Shape electrode is arranged on boron doped（110）It is orientated in diamond epi-layer surface.Wherein, interdigital electrode includes schottky junctions
Touched electrode, Ohm contact electrode, Schottky contact electrode, Ohm contact electrode are respectively positioned at boron doped（110）It is orientated Buddha's warrior attendant
Stone epi-layer surface, it is distributed between Schottky contact electrode and Ohm contact electrode in interdigital.Also include and schottky junctions
The first connected lead of touched electrode, the second lead being connected with Ohm contact electrode.
Schottky contact electrode includes the first main electrode, several first finger electrodes being connected with the first main electrode, ohm
Contact electrode includes the second main electrode, several second finger electrodes being connected with the second main electrode, and first, which refers to electrode and second, refers to
It is distributed between electrode in horizontal cross finger-like, the first main electrode is connected with the first lead, and the second main electrode is connected with the second lead.
Wherein, the first main electrode, the width of the second main electrode, first refer to electrode, second refer to electrode width, it is adjacent first refer to electrode with
Second refers to the spacing between electrode, adjustable within the specific limits.
Fig. 4 gives the I-V characteristic figure of the diamond Schottky-barrier diode of the present invention.Figure 4, it is seen that adopt
With the diode of the present invention, its reverse leakage current can as little as 4 × 10-8 A, cut-in voltage can as little as about 3 V, commutating ratio it is reachable
104.Test result indicates that：Influence the defects of crystal boundary in polycrystalline diamond films to diode behavior is reduced to by the present invention
Minimum, its combination property is effectively lifted, there is remarkable progress.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., the guarantor of the present invention all should be included in
Within the scope of shield.
Claims (11)
1. a kind of diamond Schottky-barrier diode, it is characterised in that including monocrystalline silicon substrate, boron doped（110）Orientation
Diamond epitaxial layer, interdigital electrode, it is described boron doped（110）Orientation diamond epitaxial layer is arranged on monocrystalline silicon substrate
On, the interdigital electrode is arranged on boron doped（110）It is orientated in diamond epi-layer surface；
The interdigital electrode includes Schottky contact electrode, Ohm contact electrode, and the Schottky contact electrode, ohm connect
Touched electrode is respectively positioned at boron doped（110）It is orientated diamond epi-layer surface, the Schottky contact electrode and Ohmic contact
It is distributed between electrode in interdigital；
The reverse leakage current of the diode can as little as 1 × 10-8 A, cut-in voltage can as little as 3 V, commutating ratio is up to 104。
2. diamond Schottky-barrier diode according to claim 1, it is characterised in that also include getting an electric shock with schottky junctions
Extremely the first connected lead, the second lead being connected with Ohm contact electrode, the Schottky contact electrode include the first main electricity
Pole, several be connected with the first main electrode first refer to electrodes, the Ohm contact electrode include the second main electrode, several with
The second finger electrode that second main electrode is connected, is distributed between the first finger electrode and the second finger electrode in horizontal cross finger-like,
First main electrode is connected with the first lead, and second main electrode is connected with the second lead.
3. diamond Schottky-barrier diode according to claim 2, it is characterised in that first main electrode, first
Refer to electrode, the first lead, the second lead are respectively adopted Au and are prepared, the Ohm contact electrode by Ti layers, be arranged on Ti layers
On Au layers be prepared.
4. the diamond Schottky-barrier diode according to Claims 2 or 3, it is characterised in that first main electrode,
The width of two main electrodes is respectively 0.1 ~ 0.3 mm, and first refers to electrode, the second width for referring to electrode is respectively 0.008 ~ 0.1
Mm, the adjacent first spacing referred between electrode and the second finger electrode is 0.072 ~ 0.9 mm.
5. according to any one of the claim 1-3 diamond Schottky-barrier diodes, it is characterised in that described boron doped
（110）Orientation diamond epitaxial layer be prepared using MPCVD method, the reactant gas source used for
One or more in methane, hydrogen, borine.
6. diamond Schottky-barrier diode according to claim 4, it is characterised in that described boron doped（110）Take
It is prepared to diamond epitaxial layer using MPCVD method, the reactant gas source used is methane, hydrogen
One or more in gas, borine.
7. according to the preparation method of any one of the claim 1-6 diodes, it is characterised in that comprise the following steps：
（1）Deposited on monocrystalline silicon substrate boron doped（110）It is orientated diamond epitaxial layer；
（2）Successively using photoetching process, electron beam evaporation deposition method, boron doped（110）Orientation diamond epitaxial layer shows to make
The Ti layers of standby Ohm contact electrode；
（3）After step 2, successively using photoetching process, electron beam evaporation deposition method, boron doped（110）It is orientated outside diamond
Prolong layer to show to prepare Au layers, the Schottky contact electrode of Ohm contact electrode, finally boron doped（110）It is orientated outside diamond
Prolong the interdigital electrode that Schottky contact electrode and Ohm contact electrode composition are formed in layer surface；
（4）The first lead, the second lead are correspondingly arranged on Schottky contact electrode, Ohm contact electrode in preparation respectively, and
It is packaged, produces diode.
8. the preparation method of diode according to claim 7, it is characterised in that the step（1）In, using microwave etc. from
Daughter chemical vapour deposition technique deposits boron doped on monocrystalline silicon substrate（110）It is orientated diamond epitaxial layer, the epitaxial layer
Thickness be 5 ~ 15 μm, the doping concentration of boron atom is 50 ~ 500 ppm in epitaxial layer.
9. according to the preparation method of the diode of claim 7 or 8, it is characterised in that the step（2）In, Ohmic contact
The preparation process of the Ti layers of electrode is as follows：First under the auxiliary of mask plate, pattern structure is formed on the surface of epitaxial layer；Again
Using electron beam evaporation plating metal Ti layers, the thickness of Ti layers is 20 ~ 40 nm；After the completion of prepared by metal Ti layers, then 500 ~
700 DEG C, under nitrogen atmosphere protection, short annealing, you can.
10. according to the preparation method of any one of the claim 7-8 diodes, it is characterised in that the step（3）In,
Under the auxiliary of mask blank, Au layers global pattern, the Schottky contact electrode that Ohm contact electrode is carved using photoetching process are whole
Body pattern, the Au layers global pattern of the Ohm contact electrode are located on the Ti layers of Ohm contact electrode；Steamed again using electron beam
Hair plating metal Au films, after the completion of metal Au film preparations, then under 300 DEG C, nitrogen atmosphere protection, short annealing, complete to mix in boron
Miscellaneous（110）Orientation diamond epitaxial layer shows to prepare the preparation of the Au layers, Schottky contact electrode of Ohm contact electrode；Its
In, the thickness of metal Au films is 20 ~ 30 nm.
11. the preparation method of diode according to claim 9, it is characterised in that the step（3）In, in photo etched mask
Under the auxiliary of plate, Au layers global pattern, the Schottky contact electrode global pattern of Ohm contact electrode, institute are carved using photoetching process
The Au layers global pattern for stating Ohm contact electrode is located on the Ti layers of Ohm contact electrode；Electron beam evaporation plating metal Au is used again
Film, after the completion of metal Au film preparations, then under 300 DEG C, nitrogen atmosphere protection, short annealing, complete boron doped（110）Take
Show to prepare the preparation of the Au layers, Schottky contact electrode of Ohm contact electrode to diamond epitaxial layer；Wherein, metal Au films
Thickness is 20 ~ 30 nm.
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| CN107369720B (en) * | 2017-07-05 | 2019-12-24 | 西安交通大学 | P-type diamond high-low barrier Schottky diode and preparation method thereof |
| CN111048618B (en) * | 2019-12-18 | 2021-11-02 | 宁波铼微半导体有限公司 | Schottky barrier diode temperature sensor integrated by interdigital structure and manufacturing method thereof |
| CN111477690B (en) * | 2020-04-02 | 2021-05-07 | 西安电子科技大学 | Transverse Schottky diode based on P-GaN cap layer and interdigital structure and preparation method thereof |
| CN114068681B (en) * | 2021-11-17 | 2024-04-05 | 哈尔滨工业大学 | Logic device working at high temperature based on diamond Schottky diode and preparation method thereof |
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| JPH03105974A (en) * | 1989-09-19 | 1991-05-02 | Kobe Steel Ltd | Manufacture of schottky diode by synthesizing polycrystalline diamond thin film |
| JPH07315988A (en) * | 1994-05-19 | 1995-12-05 | Matsushita Electric Ind Co Ltd | Diamond element and its production |
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