CN104638026A - Diamond schottky barrier diode and preparing method thereof - Google Patents
Diamond schottky barrier diode and preparing method thereof Download PDFInfo
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- CN104638026A CN104638026A CN201510059981.1A CN201510059981A CN104638026A CN 104638026 A CN104638026 A CN 104638026A CN 201510059981 A CN201510059981 A CN 201510059981A CN 104638026 A CN104638026 A CN 104638026A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 87
- 239000010432 diamond Substances 0.000 title claims abstract description 87
- 230000004888 barrier function Effects 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 24
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 39
- 229910052796 boron Inorganic materials 0.000 claims description 39
- 238000002360 preparation method Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 11
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910000085 borane Inorganic materials 0.000 claims description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 13
- 230000007547 defect Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000009776 industrial production Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000001657 homoepitaxy Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 230000008020 evaporation Effects 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
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- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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Abstract
The invention discloses a diamond schottky barrier diode and a preparing method thereof, and aims at solving the problems that the existing highly textured boron-doping polycrystalline diamond film schottky barrier diode adopts a polycrystalline diamond film, a great number of crystal boundary and dislocation defects inevitably exist, and the defects can certainly cause the integral performance reduction of the schottky barrier diode. The invention firstly provides the crossed finger-shaped plane schottky barrier diode and the preparing method thereof. The diode has low switching-on voltage, low reverse leaking current and higher rectification ratio, the influence of defects such as the crystal boundary in the polycrystalline diamond film on the diode performance is reduced to the minimum, and the obvious progress significance is realized. Meanwhile, the diamond schottky barrier diode and the preparing method have the advantages that the manufacturing process is simple, and the manufacturing cost is low; the manufacturing cost can be effectively reduced, the requirements of large-scale industrial production and application are met, and the wide application prospects are realized.
Description
Technical field
The present invention relates to field of semiconductor devices, be specially a kind of diamond Schottky barrier diode and preparation method thereof, it is a kind of (110) orientation diamond Schottky barrier diode and preparation method thereof.
Background technology
Power semiconductor, as the core of power circuit system, which determine the efficiency of system, size, the scope of application and reliability.At present, most of power semiconductor is made by silicon materials, but along with the development of silicon technology, its device performance has approached the limiting value of silicon materials.In order to meet high temperature, high pressure and powerful application requirement, need to select more suitable alternate material, as wide bandgap semiconductor materials.
Compared with traditional wide bandgap semiconductor materials (as carborundum, gallium nitride etc.), diamond has larger band gap width (~ 5.5eV), high saturated carrier mobility (3800cm
2/ Vs (hole) and 4500cm
2/ Vs (electronics)), large puncture voltage, high thermal conductivity and the feature such as high chemical inertness and hardness.Therefore, diamond is one of ideal material of substituted for silicon material.
The barrier height of Schottky barrier diode (SBD) is less than PN junction potential barrier, and its cut-in voltage and conduction voltage drop are all little compared with PiN diode, can reduce the power loss in circuit.In addition, Schottky barrier diode is as majority carrier device, there is not injection and the storage of minority carrier in it, the reacting recovery time is short, switching speed is fast, simultaneously because junction capacitance is lower, inverter, transducer, pfc circuit that electric automobile, hybrid electric vehicle etc. need carry out power transfer can be widely used in, and obtain the field such as rectification, inversion in the new forms of energy such as solar energy, wind energy.
P type homoepitaxy monocrystalline diamond film is due to the more shallow (E of acceptor level of boron atom
a=0.37eV), be easy to control its parameter such as resistivity and carrier mobility on a large scale, therefore, the research of current diamond junction device mainly concentrates on the metal Schottky-based barrier diode based on P type homoepitaxy single-crystal diamond.But the HPHT single-crystal diamond substrate that homoepitaxy adopts is expensive, and size less (being generally only 3 × 3 × 0.5mm), be unfavorable for widely using on a large scale with P type homoepitaxy monocrystalline diamond film Schottky barrier diode.
In recent years, large quantity research shows: many physical propertys of the polycrystalline diamond films of the highly-textured orientation of heteroepitaxial deposition and homoepitaxy single-crystal diamond are closely.And compared with homoepitaxial deposition technology, heteroepitaxial deposition technology have economy, general, can the feature prepared of large area, the extensive use for the P type heteroepitaxial diamond Schottky barrier diode with highly-textured orientation is provided reliable technical guarantee by this.
But, although the physical property with the polycrystalline diamond films of highly-textured is similar to monocrystalline diamond film, but compared with monocrystalline diamond film, because polycrystalline diamond films still inevitably exists the defects such as a large amount of crystal boundary and dislocation, and these defects certainly will cause the combination property of Schottky barrier diode to decline.
Therefore, in the urgent need to a kind of new device, to solve the problem.
Summary of the invention
For this reason, the structure of applicant to the Schottky barrier diode of the boron-doping polycrystalline diamond films based on highly-textured is optimized design, the impact of the defects such as crystal boundary on its performance in polycrystalline diamond films is reduced to and minimizes, effectively promote its combination property.
Goal of the invention of the present invention is: for the Schottky barrier diode of the boron-doping polycrystalline diamond films of current existing highly-textured, because polycrystalline diamond films still inevitably exists the defects such as a large amount of crystal boundary and dislocation, and fall into the problem that the combination property of Schottky barrier diode certainly will be caused to decline, a kind of diamond Schottky barrier diode and preparation method thereof is provided.First the present invention proposes planar type Schottky barrier diode of a kind of intersection " finger " shape and preparation method thereof, this diode has low turn-on voltage, low reverse current leakage and higher commutating ratio, the impact of the defects such as crystal boundary on diode performance in polycrystalline diamond films can be reduced to and minimize, there is significant progressive meaning.Meanwhile, the present invention has the advantage that manufacture craft is simple, cost of manufacture is low, can effectively reduce its manufacturing cost, meet the demand of large-scale industrial production, application, have broad application prospects.
To achieve these goals, the present invention adopts following technical scheme:
A kind of diamond Schottky barrier diode, comprise monocrystalline silicon substrate, boron doped (110) orientation diamond epitaxial loayer, interdigital electrode, described boron doped (110) orientation diamond epitaxial loayer is arranged on monocrystalline silicon substrate, and described interdigital electrode is arranged in boron doped (110) orientation diamond epi-layer surface;
Described interdigital electrode comprises Schottky contact electrode, Ohm contact electrode, described Schottky contact electrode, Ohm contact electrode lay respectively at boron doped (110) orientation diamond epi-layer surface, distribute between described Schottky contact electrode and Ohm contact electrode in interdigital.
The reverse leakage current of this diode can be low to moderate 1 × 10
-8a, cut-in voltage can be low to moderate 3V, and commutating ratio reaches 10
4.
Also comprise be connected with Schottky contact electrode first to go between, second going between of being connected with Ohm contact electrode, described Schottky contact electrode comprise the first main electrode, several be connected with the first main electrode first refer to electrode, described Ohm contact electrode comprise the second main electrode, several be connected with the second main electrode second refer to electrode, described first refers to that electrode and second refers to distribute in horizontal cross finger-like between electrode, described first main electrode and first goes between and is connected, and described second main electrode and second goes between and is connected.
In described boron doped (110) orientation diamond epitaxial loayer, the doping content of boron atom is 50 ~ 500ppm, and the thickness of this epitaxial loayer is 5 ~ 15 μm.
Described first main electrode, first refers to that electrode, the first lead-in wire, the second lead-in wire adopt Au to be prepared from respectively, and described Ohm contact electrode is prepared from by Ti layer, the Au layer be arranged on Ti layer.
In described Ohm contact electrode, the thickness of Ti layer is the thickness of 20 ~ 40nm, Au layer is 20 ~ 30nm.
The width of described first main electrode, the second main electrode is respectively 0.1 ~ 0.3mm, and first refers to that electrode, second refers to that the width of electrode is respectively 0.008 ~ 0.1mm, and adjacent first refers to that electrode and second refers to that the spacing between electrode is 0.072 ~ 0.9mm.
Described boron doped (110) orientation diamond epitaxial loayer adopts MPCVD method to be prepared from, and the reactant gas source of employing is one or more in methane, hydrogen, borine.
The preparation method of said second pipe, comprises the steps:
(1) on monocrystalline silicon substrate, deposit boron doped (110) orientation diamond epitaxial loayer;
(2) adopt photoetching process, electron beam evaporation deposition method successively, in boron doped (110), orientation diamond epitaxial loayer shows the Ti layer preparing Ohm contact electrode;
(3) after step 2, adopt photoetching process, electron beam evaporation deposition method successively, in boron doped (110), orientation diamond epitaxial loayer shows Au layer, the Schottky contact electrode of preparing Ohm contact electrode, in boron doped (110) orientation diamond epi-layer surface, finally form the interdigital electrode that Schottky contact electrode and Ohm contact electrode form;
(4) on the Schottky contact electrode, Ohm contact electrode of preparation, correspondence arranges the first lead-in wire, the second lead-in wire respectively, and encapsulates, and obtains diode.
In described step 1, adopt MPCVD method on monocrystalline silicon substrate, deposit boron doped (110) orientation diamond epitaxial loayer, the thickness of described epitaxial loayer is 5 ~ 15 μm, and in epitaxial loayer, the doping content of boron atom is 50 ~ 500ppm.
In described step 1, microwave power is 1400W ~ 2400W, and operating air pressure is 10 ~ 14kPa, and methane and hydrogen flowing quantity are than being 1:99.
In described step 2, the preparation process of the Ti layer of Ohm contact electrode is as follows: first mask plate auxiliary under, form pattern structure on the surface of epitaxial loayer; Adopt electron beam evaporation plating metal Ti layer again, the thickness of Ti layer is 20 ~ 40nm; After prepared by metal Ti layer, then at 500 ~ 700 DEG C, under nitrogen atmosphere protection, short annealing.
Mask plate auxiliary under, the surface adopting photoetching, develop or be etched in epitaxial loayer forms pattern structure.
In described step 3, mask blank auxiliary under, adopt photoetching process to carve Au layer global pattern, the Schottky contact electrode global pattern of Ohm contact electrode, the Au layer global pattern of described Ohm contact electrode is positioned on the Ti layer of Ohm contact electrode; Adopt electron beam evaporation plating metal A u film again, after metal A u film preparation completes, then at 300 DEG C, under nitrogen atmosphere protection, short annealing, completes and shows to prepare the Au layer of Ohm contact electrode, the preparation of Schottky contact electrode at boron doped (110) orientation diamond epitaxial loayer; Wherein, the thickness of metal A u film is 20 ~ 30nm.
In described step 4, adopt electric welding to arrange on Schottky contact electrode respectively on the first lead-in wire, Ohm contact electrode and the second lead-in wire is set.
For foregoing problems, the invention provides a kind of diamond Schottky barrier diode and preparation method thereof.Diode of the present invention adopts boron doped (110) orientation diamond epitaxial loayer, it is compared with the single crystal diamond layer of existing homoepitaxy, the area of the utilized making diode of this epitaxial loayer (can realize the uniform deposition of 2 inches more greatly under current process conditions, and the size of homoepitaxy single crystal diamond layer is about 3 × 3mm), therefore, the present invention can realize the making of large-area Schottky barrier diode.Meanwhile, in the present invention, between Schottky contact electrode and Ohm contact electrode, the distribution in interdigital, forms interdigital electrode, adopts this structure, effectively can reduce the defects such as the crystal boundary in polycrystalline diamond epitaxial loayer to the impact of diode behavior.After measured, diamond Schottky barrier diode of the present invention has the advantages such as low conducting voltage, low reverse current leakage and higher commutating ratio, and hinge structure, has significant progress.
Meanwhile, the invention provides a kind of preparation method, the method adopts the simple photoetching-plated film-etching of two steps, can complete the making of diode, and manufacture craft is simple, quick, can meet the needs of industrialization large-scale production, have broad application prospects.
In sum, the structural design of diamond Schottky barrier diode of the present invention is relatively more flexible, and preparation technology is simple, has the excellent electrology characteristic of low turn-on voltage, low reverse current leakage and higher commutating ratio.
Accompanying drawing explanation
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1 is structural representation of the present invention.
Fig. 2 is the front view of diode of the present invention.
Fig. 3 is the vertical view of Fig. 2.
Fig. 4 is the I-V performance plot of Schottky barrier diode provided by the invention.
Mark in figure: 1 is monocrystalline silicon substrate, and 2 is boron doped (110) orientation diamond epitaxial loayer, and 3 is the first main electrode, and 4 is the first finger electrode, and 5 is the first main electrode, and 6 is the first finger electrode.
Embodiment
All features disclosed in this specification, or the step in disclosed all methods or process, except mutually exclusive feature and/or step, all can combine by any way.
Arbitrary feature disclosed in this specification, unless specifically stated otherwise, all can be replaced by other equivalences or the alternative features with similar object.That is, unless specifically stated otherwise, each feature is an example in a series of equivalence or similar characteristics.Simple and clear in order to set forth, accompanying drawing is just described general structure, eliminates the well-known specification specified of part, to avoid unnecessary fuzzy expression.The sectional view of accompanying drawing is not drawn in strict accordance with actual ratio, and some regional area may be exaggerated to help read and understand the present invention.
Embodiment 1
Making programme of the present invention is as follows.
Step 100: grow (110) orientation boron-doped diamond epitaxial loayer on single crystal Si substrate.
On the single crystal Si substrate of forming core in advance, utilize MPCVD method epitaxial growth boron doped (110) orientation diamond epitaxial loayer.Wherein, the deposition parameter of MPCVD method is: microwave power is 1800W, and operating air pressure is 12kPa, and methane and hydrogen flowing quantity are than being 1:99, boron atom (borine is boron-doping source) doping content is 100ppm, and growth time is 5 hours.Under this condition, the thickness of (110) orientation diamond epitaxial loayer is 6 μm.
Step 200: boron doped (110) orientation diamond epi-layer surface process and coating photoresist.
Boron doped (110) orientation diamond epitaxial loayer step 100 prepared is placed in dense H
2sO
4with dense HNO
3mixed solution (dense H
2sO
4with dense HNO
3volume ratio be 3:1) in, boil process 30 minutes, to remove possible hydrogen termination surface P-type conduction layer, form oxygen termination table surface state, then use each ultrasonic cleaning of acetone, deionized water 15 minutes respectively; Then, utilize sol evenning machine in the diamond epi-layer surface after ultrasonic cleaning, form uniform photoresist (positive glue) film, thickness is 4 μm, and at 100 DEG C, is incubated 30 minutes, to remove the solvent in glued membrane.
Step 300: carry out photoetching, development on diamond epitaxial loayer after, form pattern structure.
Utilize the Ohm contact electrode photo mask board made in advance, after the distance being regulated mask plate and diamond epitaxial loayer by mask aligner, adopt the 254nm ultraviolet photoetching that high-pressure mercury lamp produces; Then adopt acetone to be developer solution, the photoresist be not exposed is dissolved, produces required Ohm contact electrode figure.
Step 400: the Ti layer making Ohm contact electrode on diamond epitaxial loayer.
Utilize electron beam evaporation deposition technology, evaporation Ti metal on the figure of photoetching formation Ohm contact electrode, electron beam line is 200mA, and the time is 15 minutes, and the plating Ti layer thickness obtained is 30nm.After prepared by metal Ti layer, then under 550 DEG C and nitrogen atmosphere protection, short annealing 20 minutes.
Step 500: on the diamond epitaxial loayer of Ti layer being manufactured with Ohm contact electrode, one-step method makes the photoengraving pattern of Au layer, the photoengraving pattern of Schottky contact electrode of Ohm contact electrode.
Utilize overall electrode (comprising ohmic contact and the Schottky basis) photo mask board made in advance, adopt identical photoetching, development and post bake technique, produce the photoengraving pattern of Au layer containing Ohm contact electrode, the photoengraving pattern of Schottky contact electrode.
Step 600: the Au layer, the Schottky contact electrode that make Ohm contact electrode on diamond epitaxial loayer.
Adopt electron beam evaporation deposition technology, plating Au on the photoengraving pattern made by step 500, electron beam line is 100mA, and the time is 10 minutes, and the Au film thickness of institute's plating is 20nm.After metal A u film preparation completes; again under 300 DEG C and nitrogen atmosphere protection; short annealing 20 minutes; complete and show to prepare the Au layer of Ohm contact electrode, the preparation of Schottky contact electrode at boron doped (110) orientation diamond epitaxial loayer, in boron doped (110) orientation diamond epi-layer surface, finally form the interdigital electrode that Schottky contact electrode and Ohm contact electrode form.
Fig. 1 is structural representation of the present invention, and Fig. 2,3 is respectively front view, the vertical view of the diode that the present invention makes.
As shown in the figure, this diamond Schottky barrier diode comprises monocrystalline silicon substrate, boron doped (110) orientation diamond epitaxial loayer, interdigital electrode, boron doped (110) orientation diamond epitaxial loayer is arranged on monocrystalline silicon substrate, and interdigital electrode is arranged in boron doped (110) orientation diamond epi-layer surface.Wherein, interdigital electrode comprises Schottky contact electrode, Ohm contact electrode, Schottky contact electrode, Ohm contact electrode lay respectively at boron doped (110) orientation diamond epi-layer surface, the distribution in interdigital between Schottky contact electrode and Ohm contact electrode.Also comprise be connected with Schottky contact electrode first to go between, second going between of being connected with Ohm contact electrode.
Schottky contact electrode comprise the first main electrode, several be connected with the first main electrode first refer to electrode, Ohm contact electrode comprise the second main electrode, several be connected with the second main electrode second refer to electrode, first refers to that electrode and second refers to distribute in horizontal cross finger-like between electrode, first main electrode and first goes between and is connected, and the second main electrode and second goes between and is connected.Wherein, the width of the first main electrode, the second main electrode, first refers to that electrode, second refers to the width of electrode, and adjacent first refers to that electrode and second refers to the spacing between electrode, adjustable within the specific limits.
Fig. 4 gives the I-V performance plot of diamond Schottky barrier diode of the present invention.As can be seen from Figure 4, adopt diode of the present invention, its reverse leakage current can be low to moderate 4 × 10
-8a, cut-in voltage can be low to moderate about 3V, and commutating ratio can reach 10
4.Experimental result shows: the impact of the defects such as crystal boundary on diode performance in polycrystalline diamond films is reduced to minimum by the present invention, effectively promotes its combination property, has significant progressive meaning.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a diamond Schottky barrier diode, it is characterized in that, comprise monocrystalline silicon substrate, boron doped (110) orientation diamond epitaxial loayer, interdigital electrode, described boron doped (110) orientation diamond epitaxial loayer is arranged on monocrystalline silicon substrate, and described interdigital electrode is arranged in boron doped (110) orientation diamond epi-layer surface;
Described interdigital electrode comprises Schottky contact electrode, Ohm contact electrode, described Schottky contact electrode, Ohm contact electrode lay respectively at boron doped (110) orientation diamond epi-layer surface, distribute between described Schottky contact electrode and Ohm contact electrode in interdigital.
2. diamond Schottky barrier diode according to claim 1, it is characterized in that, the reverse leakage current of this diode can be low to moderate 1 × 10
-8a, cut-in voltage can be low to moderate 3 V, and commutating ratio reaches 10
4.
3. diamond Schottky barrier diode according to claim 1, it is characterized in that, also comprise first going between of being connected with Schottky contact electrode, be connected with Ohm contact electrode second goes between, described Schottky contact electrode comprises the first main electrode, what several were connected with the first main electrode first refers to electrode, described Ohm contact electrode comprises the second main electrode, what several were connected with the second main electrode second refers to electrode, described first refers to that electrode and second refers to distribute in horizontal cross finger-like between electrode, described first main electrode and first goes between and is connected, described second main electrode and second goes between and is connected.
4. diamond Schottky barrier diode according to claim 3, it is characterized in that, described first main electrode, first refers to that electrode, the first lead-in wire, the second lead-in wire adopt Au to be prepared from respectively, and described Ohm contact electrode is prepared from by Ti layer, the Au layer be arranged on Ti layer.
5. diamond Schottky barrier diode according to claim 3 or 4, it is characterized in that, the width of described first main electrode, the second main electrode is respectively 0.1 ~ 0.3 mm, first refers to that electrode, second refers to that the width of electrode is respectively 0.008 ~ 0.1 mm, and adjacent first refers to that electrode and second refers to that the spacing between electrode is 0.072 ~ 0.9 mm.
6. diamond Schottky barrier diode according to any one of claim 1-5, it is characterized in that, described boron doped (110) orientation diamond epitaxial loayer adopts MPCVD method to be prepared from, and the reactant gas source of employing is one or more in methane, hydrogen, borine.
7. the preparation method of diode according to any one of claim 1-6, is characterized in that, comprise the steps:
(1) on monocrystalline silicon substrate, deposit boron doped (110) orientation diamond epitaxial loayer;
(2) adopt photoetching process, electron beam evaporation deposition method successively, in boron doped (110), orientation diamond epitaxial loayer shows the Ti layer preparing Ohm contact electrode;
(3) after step 2, adopt photoetching process, electron beam evaporation deposition method successively, in boron doped (110), orientation diamond epitaxial loayer shows Au layer, the Schottky contact electrode of preparing Ohm contact electrode, in boron doped (110) orientation diamond epi-layer surface, finally form the interdigital electrode that Schottky contact electrode and Ohm contact electrode form;
(4) on the Schottky contact electrode, Ohm contact electrode of preparation, correspondence arranges the first lead-in wire, the second lead-in wire respectively, and encapsulates, and obtains diode.
8. the preparation method of diode according to claim 7, it is characterized in that, in described step 1, adopt MPCVD method on monocrystalline silicon substrate, deposit boron doped (110) orientation diamond epitaxial loayer, the thickness of described epitaxial loayer is 5 ~ 15 μm, and in epitaxial loayer, the doping content of boron atom is 50 ~ 500 ppm.
9. the preparation method of diode according to claim 7 or 8, it is characterized in that, in described step 2, the preparation process of the Ti layer of Ohm contact electrode is as follows: first mask plate auxiliary under, form pattern structure on the surface of epitaxial loayer; Adopt electron beam evaporation plating metal Ti layer again, the thickness of Ti layer is 20 ~ 40 nm; After prepared by metal Ti layer, then at 500 ~ 700 DEG C, under nitrogen atmosphere protection, short annealing.
10. the preparation method of diode according to any one of claim 7-9, it is characterized in that, in described step 3, mask blank auxiliary under, adopt photoetching process to carve Au layer global pattern, the Schottky contact electrode global pattern of Ohm contact electrode, the Au layer global pattern of described Ohm contact electrode is positioned on the Ti layer of Ohm contact electrode; Adopt electron beam evaporation plating metal A u film again, after metal A u film preparation completes, then at 300 DEG C, under nitrogen atmosphere protection, short annealing, completes and shows to prepare the Au layer of Ohm contact electrode, the preparation of Schottky contact electrode at boron doped (110) orientation diamond epitaxial loayer; Wherein, the thickness of metal A u film is 20 ~ 30 nm.
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| CN107369720A (en) * | 2017-07-05 | 2017-11-21 | 西安交通大学 | A kind of p-type diamond height barrier Schottky diode and preparation method thereof |
| RU2654352C1 (en) * | 2017-01-20 | 2018-05-17 | Федеральное государственное унитарное предприятие "Ростовский-на-Дону научно-исследовательский институт радиосвязи" (ФГУП "РНИИРС") | Three-electrode semiconductor device |
| CN111048618A (en) * | 2019-12-18 | 2020-04-21 | 宁波铼微半导体有限公司 | Schottky barrier diode temperature sensor integrated by interdigital structure and manufacturing method thereof |
| CN111477690A (en) * | 2020-04-02 | 2020-07-31 | 西安电子科技大学 | Transverse Schottky diode based on P-GaN cap layer and interdigital structure and preparation method thereof |
| CN114068681A (en) * | 2021-11-17 | 2022-02-18 | 哈尔滨工业大学 | Diamond Schottky diode-based logic device working at high temperature and preparation method thereof |
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| CN114068681B (en) * | 2021-11-17 | 2024-04-05 | 哈尔滨工业大学 | Logic device working at high temperature based on diamond Schottky diode and preparation method thereof |
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