CN111048618B - Schottky barrier diode temperature sensor integrated by interdigital structure and manufacturing method thereof - Google Patents
Schottky barrier diode temperature sensor integrated by interdigital structure and manufacturing method thereof Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 30
- 238000005516 engineering process Methods 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000012300 argon atmosphere Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 238000005477 sputtering target Methods 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention relates to an interdigital structure integrated Schottky barrier diode temperature sensor and a manufacturing method thereof. The diode comprises a substrate layer, a buffer layer and n which are arranged in sequence+-a GaN layer, an interdigitated structure and a connection; the interdigital structure comprises n‑-a GaN layer, an ohmic electrode and a schottky electrode; the interdigital structures are connected through the connecting part; the connection mode comprises series connection. The temperature sensor is integrated in series through Schottky barrier diodes with interdigital structures, so that the sensitivity of the temperature sensor can be improved; compared with a conventional Schottky barrier temperature sensor, the Schottky barrier diode temperature sensor integrated by the interdigital structure has the advantage that the temperature sensitivity is doubled, so that the environment temperature can be effectively detected.
Description
Technical Field
The invention belongs to the technical field of semiconductor power device integration, and particularly relates to an interdigital structure integrated Schottky barrier diode temperature sensor and a manufacturing method thereof.
Background
GaN-based devices have low power losses and high switching speeds, which are essential to improve power density and energy efficiency in power electronics applications. The application of the photovoltaic power generation system in aspects of electric automobile and smart phone charging stations, photovoltaic inverters, data center power supplies and the like has numerous advantages. However, severe heat dissipation during on-state conduction and on/off switching cycles results in high junction temperatures, which can greatly degrade safe and reliable operation.
The temperature detection of the existing GaN-based power device mainly adopts a single titanium nitride Schottky diode or a pn junction diode with a circular structure, and the temperature sensitivity is relatively low and is usually 1-2 mV/K.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an interdigital structure integrated Schottky barrier diode temperature sensor and a manufacturing method thereof. The technical problem that the diode serving as the temperature sensor in the prior art is low in sensitivity is solved.
The invention provides an interdigital structure integrated Schottky barrier diode temperature sensor, which comprises a substrate layer, a buffer layer and n+-a GaN layer, an interdigitated structure and a connection; the interdigital structure comprises n--a GaN layer, an ohmic electrode and a schottky electrode; and by pairing n--a GaN layer, n+-etching the GaN layer and the buffer layer and realizing device isolation to form two isolated devices; the interdigital structures are connected through the connecting part; the connection mode comprises series connection, and the series connection is connection between different isolation devices.
The principles of the present invention are further explained in order to facilitate an understanding of the present invention.
The Schottky diode shows a strong temperature dependence in a forward bias area, can be used for detecting the ambient temperature according to the linear dependence of bias voltage at different temperatures under the same forward current, and has higher temperature sensitivity and low turn-on voltage by utilizing a series structure formed by the interdigital diode as a temperature sensor.
n+-a GaN layer and n-The GaN-based material in the GaN layer has the characteristics of large band gap, high breakdown field, high electron mobility and high electron saturation velocity, n+GaN and titanium/aluminum/titanium/gold forming ohmic contacts reducing the series resistance, n-GaN and titanium nitride forming Schottky contacts, the use of which makes it possible to increase the thermal stability of the device and to reduce the size of the deviceThe turn-on voltage of the element.
When the series integration is adopted, the voltage of each diode can change along with the temperature in the same current, and the voltage is adjusted to be the sum of all the diodes so as to maintain the same current, so that the temperature sensitivity of the temperature sensor can be improved.
Preferably, the connection portion includes a Pad electrode and an air bridge electrode.
Preferably, the schottky barrier diode temperature sensor integrated with the interdigital structure further includes a dielectric layer disposed on the n--a GaN layer and the schottky electrode.
Preferably, the interdigital structures are connected in series and in parallel. And different interdigital structures on the same isolation device are connected in parallel, and interdigital structures on different isolation devices are connected in series.
In another aspect of the present invention, a method for manufacturing a schottky barrier diode temperature sensor integrated with an interdigital structure is provided, which includes the following steps:
s1: sequentially forming a buffer layer and n on the surface of the substrate layer by adopting a metal organic chemical vapor deposition method+-a GaN layer and n--a GaN layer, resulting in a sensor intermediate a;
s2: adopting photoetching development technology and dry etching technology to carry out n on sensor intermediate a--etching the GaN layer and forming a platform to obtain a sensor intermediate b;
s3: adopting dry etching technology to carry out n on sensor intermediate b+-a GaN layer, a buffer layer, n-Etching the GaN layer and realizing device isolation to obtain a sensor intermediate c;
s4: forming a dielectric layer on the sensor intermediate c by adopting a vapor phase epitaxy technology, and realizing a dielectric layer pattern by using a photoetching development technology and a wet etching technology to obtain a sensor intermediate d;
s5: sequentially forming a titanium/aluminum/titanium/gold metal layer on the surface of the sensor intermediate d by adopting a magnetron sputtering method, stripping the metal outside the region of the ohmic electrode to be formed by adopting a stripping method, and annealing in a nitrogen atmosphere to form the ohmic electrode to obtain a sensor intermediate e;
s6: n in sensor intermediate e by reactive magnetron sputtering method--forming a schottky electrode on the GaN layer to obtain a sensor intermediate f;
s7: and forming a Pad electrode and an air bridge electrode in a Pad area and an air bridge area of the sensor intermediate f by adopting a reactive magnetron sputtering method and an electroplating method, thus obtaining the Schottky barrier diode temperature sensor integrated with the interdigital structure.
Preferably, in step S1, n+Doping concentration of the GaN layer is 1018～1019cm-3；n--the doping concentration of the GaN layer (4) is 5.0 x 1015～6.0×1017cm-3。
Preferably, in step S4, the dielectric layer has a thickness of 100 to 120nm and is made of SiN; the wet etch employs a 15 wt.% HF solution.
Preferably, in step S6, the sputtering target used in the reactive magnetron sputtering method is a titanium target; the reactive magnetron sputtering method is performed after nitrogen is filled in an argon atmosphere.
Preferably, in step S6, in step S6, the material of the schottky electrode is titanium nitride.
Preferably, in step S7, the electroplating is performed by using a gold solution, and the thickness of the electrode is 1 to 2 μm.
The invention has the beneficial effects that:
the Schottky barrier diode temperature sensor integrated by the interdigital structure is integrated in series by the Schottky barrier diode of the interdigital structure, so that the sensitivity of the temperature sensor can be improved; compared with a conventional Schottky barrier temperature sensor, the Schottky barrier diode temperature sensor integrated by the interdigital structure has the advantage that the temperature sensitivity is doubled, so that the environment temperature can be effectively detected.
The preferable scheme of the invention also has the following beneficial effects:
the titanium nitride film layer is in Schottky contact, so that the high-temperature-resistant Schottky barrier diode has high thermal stability and low turn-on voltage, and is more suitable for harsh environments.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic front view of an interdigital structure-integrated schottky barrier diode temperature sensor structure described in example 1.
Fig. 2 is a schematic front view of an interdigital structure-integrated schottky barrier diode temperature sensor structure described in example 2.
Fig. 3 is a schematic top view of an interdigital structure integrated schottky barrier diode temperature sensor structure described in example 2.
Fig. 4 is a schematic front view of an interdigital structure-integrated schottky barrier diode temperature sensor structure described in example 3.
Fig. 5 is a schematic top view of an interdigital structure integrated schottky barrier diode temperature sensor structure described in example 3.
Reference numbers in the figures:
1-a substrate layer; 2-a buffer layer; 3-n+-a GaN layer; 4-n--a GaN layer; 5-a dielectric layer; a 6-ohmic electrode; a 7-Schottky electrode; an 8-Pad electrode; 9-air bridge electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without any inventive step, are within the scope of the present invention.
Example 1
The present embodiment provides an interdigital structure integrated schottky barrier diode temperature sensor.
Referring to fig. 1, the schottky barrier diode temperature sensor integrated by the interdigital structure comprises a substrate layer 1, a buffer layer 2 and n which are arranged in sequence+-a GaN layer 3, interdigitated structures and connections; the interdigital structure comprises n-GaN layer 4, ohmic electrode 6 and schottky electrode 7; and by pairing n-GaN layer 4, n+The GaN layer 3 and the buffer layer 2 are etched and device isolation is realized to form two isolation devices; the interdigital structures are connected through the connecting part; the connection mode comprises series connection, and the series connection is connection between different isolation devices. It is emphasized that the connection method is various and can be selected as required, and the connection method in this embodiment is performed by gold wire, and can also be performed by air bridge or other connection methods.
Example 2
The present embodiment provides an interdigital structure integrated schottky barrier diode temperature sensor.
Referring to fig. 2 and 3, the present embodiment is different from embodiment 1 in that the connection portion of the schottky barrier diode temperature sensor integrated with an interdigital structure includes a Pad electrode 8 and an air bridge electrode 9, and the schottky barrier diode temperature sensor integrated with an interdigital structure further includes a dielectric layer 5 disposed on the n-Between GaN layer 4 and said schottky electrode 7.
Example 3
The present embodiment provides an interdigital structure integrated schottky barrier diode temperature sensor.
Referring to fig. 4 and 5, the present embodiment is different from embodiment 2 in that the inter-digital structures are connected in series and in parallel. And different interdigital structures on the same isolation device are connected in parallel, and interdigital structures on different isolation devices are connected in series.
Example 4
The embodiment provides a preparation method of a schottky barrier diode temperature sensor integrated by an interdigital structure, which comprises the following steps:
s1: sequentially forming a buffer layer 2 and n on the surface of a substrate layer 1 formed by sapphire by adopting a metal organic chemical vapor deposition method+GaN layers 3 and n-A GaN layer 4, where n+The doping concentration of GaN layer 3 is 1018cm-3；n-The doping concentration of the GaN layer 4 is 5.0X 1015cm-3Obtaining a sensor intermediate a;
s2: adopting photoetching development technology and dry etching technology to carry out n on sensor intermediate a--etching the GaN layer 4 and forming a platform to obtain a sensor intermediate b;
s3: adopting dry etching technology to carry out n on sensor intermediate b+GaN layer 3, buffer layer 2, n-The GaN layer 4 is etched and device isolation is realized to obtain a sensor intermediate c;
s4: forming a 100nm thick SiN dielectric layer 5 on the sensor intermediate c by adopting a vapor phase epitaxy technology, and realizing a dielectric layer pattern by adopting a photoetching development technology and a wet etching technology, wherein the wet etching technology adopts 15 wt.% of HF solution to obtain a sensor intermediate d;
s5: sequentially forming titanium/aluminum/titanium/gold metal layers on the surface of the sensor intermediate d by adopting a magnetron sputtering method, stripping the metal outside the region of the ohmic electrode to be formed by adopting a stripping method, and annealing in a nitrogen atmosphere to form an ohmic electrode 6 to obtain a sensor intermediate e;
s6: n in sensor intermediate e by reactive magnetron sputtering method-The GaN layer forms a titanium nitride schottky electrode 7, wherein the reactive magnetron sputtering method uses a titanium target as sputtering target; the reactive magnetron sputtering method is carried out after nitrogen is filled in an argon atmosphere to obtain a sensor intermediate f;
s7: and forming a Pad electrode 8 and an air bridge electrode 9 in a Pad area and an air bridge area of the sensor intermediate f by adopting a reactive magnetron sputtering method and an electroplating method, wherein the thickness of the electrodes is 1 mu m, and thus obtaining the Schottky barrier diode temperature sensor integrated by the interdigital structure.
Example 5
This embodiment provides an interdigital integrated pinThe preparation method of the special-base barrier diode temperature sensor is different from the embodiment 4 in that: in step S1, n+The doping concentration of GaN layer 3 is 1019cm-3；n-The doping concentration of GaN layer 4 is 6.0X 1017cm-3(ii) a In step S4, a SiN dielectric layer 5 with a thickness of 120nm is formed; in step S7, the electrode thickness was 2 μm. The rest operation steps are consistent.
The foregoing is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present invention, and all those variations or substitutions are within the scope of the present invention, for example, schottky diodes with other shapes such as circular or square are also within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. An interdigital structure integrated Schottky barrier diode temperature sensor is characterized by comprising a substrate layer (1), a buffer layer (2) and n which are sequentially arranged+-a GaN layer (3), an interdigitated structure and a connection portion; the interdigital structure comprises n--a GaN layer (4), an ohmic electrode (6) and a schottky electrode (7); and by pairing n--a GaN layer (4), n+-etching the GaN layer (3) and the buffer layer (2) and realizing device isolation to form two isolated devices; the interdigital structures are connected through the connecting part; the connection mode comprises series connection, and the series connection is connection between different isolation devices.
2. The interdigitated structure integrated schottky barrier diode temperature sensor according to claim 1, wherein the connection comprises a Pad electrode (8) and an air bridge electrode (9).
3. The interdigital structure integrated schottky barrier diode temperature sensor according to claim 2, further comprising a dielectric layer (5), wherein the dielectric layer (5) is disposed on the n--a GaN layer (4) and the said pinBetween the special electrodes (7).
4. The schottky barrier diode temperature sensor integrated with the interdigital structures of claim 3, wherein the interdigital structures are connected in series and in parallel; and different interdigital structures on the same isolation device are connected in parallel, and interdigital structures on different isolation devices are connected in series.
5. The method of making an interdigitated structure integrated schottky barrier diode temperature sensor as claimed in claim 4, comprising the steps of:
s1: sequentially forming a buffer layer (2) and n on the surface of a substrate layer (1) by adopting a metal organic chemical vapor deposition method+-a GaN layer (3) and n--a GaN layer (4) resulting in a sensor intermediate a;
s2: adopting photoetching development technology and dry etching technology to carry out n on sensor intermediate a--etching the GaN layer (4) and forming a platform to obtain a sensor intermediate b;
s3: adopting dry etching technology to carry out n on sensor intermediate b+-a GaN layer (3), a buffer layer (2), n--etching the GaN layer (4) and realizing device isolation to obtain a sensor intermediate c;
s4: forming a dielectric layer (5) on the sensor intermediate c by adopting a vapor phase epitaxy technology, and realizing a dielectric layer pattern by using a photoetching development technology and a wet etching technology to obtain a sensor intermediate d;
s5: sequentially forming titanium/aluminum/titanium/gold metal layers on the surface of the sensor intermediate d by adopting a magnetron sputtering method, stripping the metal outside the region of the ohmic electrode to be formed by adopting a stripping method, and annealing in a nitrogen atmosphere to form an ohmic electrode (6) to obtain a sensor intermediate e;
s6: n in sensor intermediate e by reactive magnetron sputtering method--the GaN layer (4) forms a schottky electrode (7) to obtain a sensor intermediate f;
s7: and forming a Pad electrode (8) and an air bridge electrode (9) in a Pad area and an air bridge area of the sensor intermediate f by adopting a reactive magnetron sputtering method and an electroplating method, thus obtaining the Schottky barrier diode temperature sensor integrated with the interdigital structure.
6. The method of claim 5 wherein n is n 1+-the doping concentration of the GaN layer (3) is 1018～1019cm-3；n--the doping concentration of the GaN layer (4) is 5.0 x 1015～6.0×1017cm-3。
7. The method for manufacturing the Schottky barrier diode temperature sensor with the integrated interdigital structure according to claim 5, wherein in step S4, the dielectric layer (5) has a thickness of 100-120 nm and is made of SiN; the wet etch employs a 15 wt.% HF solution.
8. The method for manufacturing the schottky barrier diode temperature sensor with the integrated interdigital structure according to claim 5, wherein in step S6, the sputtering target used in the reactive magnetron sputtering method is a titanium target; the reactive magnetron sputtering method is performed after nitrogen is filled in an argon atmosphere.
9. The method for manufacturing the schottky barrier diode temperature sensor with integrated interdigital structure of claim 5, wherein in step S6, the material of the schottky electrode (7) is titanium nitride.
10. The method for manufacturing the Schottky barrier diode temperature sensor with the integrated interdigital structure according to claim 5, wherein in step S7, the electroplating is performed by using a gold solution, and the thickness of the electrode is 1-2 μm.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101694842B (en) * | 2009-10-20 | 2013-04-03 | 中山大学 | Power AlGaN/GaN Schottky diode and manufacturing method thereof |
| CN104638026A (en) * | 2015-02-05 | 2015-05-20 | 西南科技大学 | Diamond schottky barrier diode and preparing method thereof |
| CN104851921A (en) * | 2015-05-21 | 2015-08-19 | 中国电子科技集团公司第十三研究所 | GaN-based Schottky diode of vertical structure, and manufacture method thereof |
| US9666677B1 (en) * | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
| JP6304520B1 (en) * | 2017-07-27 | 2018-04-04 | 株式会社レーザーシステム | Semiconductor device |
| CN110137246A (en) * | 2019-06-04 | 2019-08-16 | 中山大学 | A kind of low junction capacity characteristic Terahertz Schottky diode and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101878931B1 (en) * | 2015-06-23 | 2018-07-17 | 한국전자통신연구원 | Semiconductor devices and the method of forming the same |
| US10700218B2 (en) * | 2017-11-07 | 2020-06-30 | Arizona Board Of Regents On Behalf Of Arizona State University | High-voltage aluminum nitride (AIN) schottky-barrier diodes |
| CN109540988B (en) * | 2018-11-09 | 2020-12-29 | 中山大学 | No reference electrode GaN base pH sensor based on interdigital electrode and groove structure |
-
2019
- 2019-12-18 CN CN201911308964.1A patent/CN111048618B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101694842B (en) * | 2009-10-20 | 2013-04-03 | 中山大学 | Power AlGaN/GaN Schottky diode and manufacturing method thereof |
| US9666677B1 (en) * | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
| CN104638026A (en) * | 2015-02-05 | 2015-05-20 | 西南科技大学 | Diamond schottky barrier diode and preparing method thereof |
| CN104851921A (en) * | 2015-05-21 | 2015-08-19 | 中国电子科技集团公司第十三研究所 | GaN-based Schottky diode of vertical structure, and manufacture method thereof |
| JP6304520B1 (en) * | 2017-07-27 | 2018-04-04 | 株式会社レーザーシステム | Semiconductor device |
| CN110137246A (en) * | 2019-06-04 | 2019-08-16 | 中山大学 | A kind of low junction capacity characteristic Terahertz Schottky diode and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| DLTS analysis of high resistive edge termination technique-induced defects in GaN-based Schottky barrier diodes;Sodjan Kone,Frederic Cayrel et al;《Phys. Status Solidi A》;20160330;全文 * |
| GaN Schottky Barrier Diode with TiN Electrode for Microwave Rectification;LIUAN LI et al;《JOURNAL OF THE ELECTRON DEVICES SOCIETY》;20141023;全文 * |
| GaN基肖特基势垒二极管结构优化研究进展;吴月芳等;《发光学报》;20170430;第38卷(第4期);全文 * |
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