TW423166B - Photodiode with the emitting surface and ohmic electrode located on different plane and its manufacturing method - Google Patents

Abstract

The present invention provides a photodiode which includes a photon generation device to generate and emit light, wherein its transparent insulating substrate is the light emitting surface, and also includes the electrode device connected outwards. The present invention also provides a manufacturing method of the photodiode, comprising the following steps: making the photon generation device, making the electrode device, and connecting the photon genetration device and the electrode device.

Description

423166 V. Description of the Invention (1) [Field of the Invention] The present invention relates to a light-emitting diode and a manufacturing method thereof, and particularly to a light-emitting diode using an insulating substrate as a light-emitting surface, and the light-emitting surface and the ohmic electrode are respectively located on different planes. And its manufacturing method. [Explanation of the related technology] Semiconductor devices made of semiconductor materials with photoelectric effect, such as light-emitting diodes, light detectors, and semiconductor lasers, have a wide range of applications. In recent years, high-brightness light-emitting diodes composed of gallium nitride-based Group III-V semiconductors such as gallium nitride, aluminum gallium nitride, or indium gallium nitride have been successfully developed. The cross-sectional view of Fig. 1 (a) shows the structure of the light-emitting diode of the prior art. The light-emitting diode of the prior art is composed of a welding frame 2 0/2 3 and connected to the welding frame 2 0/2 3 Composed of a plurality of material layers. Among the plurality of material layers of the light-emitting diode, from bottom to top are: an insulating substrate 1 composed of alumina; a nucleation layer 2 formed on the surface 1 a of the insulating substrate 1; and the tritiated layer 2 The buffer layer 3 is made of gallium nitride and formed on the nucleation layer 2. The buffer layer 3 is made of N-type gallium nitride, formed on part of the surface of the buffer layer 3, and is made of metal. An electrode 10, a first binding layer 4 formed on another surface of the buffer layer 3, the first binding layer 4 is a light-emitting layer 5 formed of N-type aluminum gallium nitride and formed on the first binding layer 4, The light emitting layer 5 is a second binding layer 6 formed of indium gallium nitride and formed on the light emitting layer 5, and the second binding layer 6 is formed of P-type aluminum gallium nitride and formed on the second binding layer 6. A contact layer 7 on top, which is composed of P-type gallium nitride

423166 V. Description of the invention (2) The Ni / Au layer 8 formed on the contact layer 7 and the joint 塾 9 made of metal formed on the Ni / Au layer 8 〃. In FIG. 1 (a), among the aforementioned plurality of material layers, the surface lb of the insulating substrate 1 is fixed to the inner bottom surface of the cup-shaped welding frame 20, and the ohmic electrode 10 is connected to the cup-shaped welding frame 2 through the connecting wire 2 1. At 0, the connection pad 9 is connected to the separated welding frame 23 via a connection line 22. In addition, the cup-shaped welding frame 20 is grounded (not shown), and the separate welding frame 2 3 is connected to an external power supply (not shown). When the external power supply (not shown) applies a predetermined voltage to the separated welding frame 23, the current will flow from the connection pad 9 through the Ni / Au layer 8 (this layer is used to disperse the current) and the contact layer in order. 7. The second binding layer 6, the light emitting layer 5, the first binding layer 4, and the buffer layer 3 reach the ohmic electrode 10 15 when the current flows through the light emitting layer 5, that is, when holes and electrons pass through the contact layer 7 respectively When entering the light-emitting layer 5 with the second binding layer 6 and the buffer layer 3 and the first binding layer 4, the electrons and holes are combined with each other in the light-emitting layer 5, so that the potential energy difference between the electrons and the holes is converted into a predetermined The wavelength of light 30 is determined by the material of the light emitting layer 5. Subsequently, the light 30 penetrates the Ni / Au layer 8 and is emitted to the outside. The aforementioned prior art light-emitting diodes have been disclosed in U.S. Patent Nos. 5,767,585. In this light emitting diode, although the Ni / Au layer 8 is used as a current dispersing layer, the current flowing from the connection pad 9 is dispersed and flows into the contact layer 7 to increase the light emitting area. However, due to the light of the Ni / Au layer 8 The transmittance is less than 50%, which makes the luminous efficiency of the light-emitting diode decrease. Furthermore, because the bonding pad 9 formed on the Ni / Au layer 8 is opaque

V. Description of the invention (3) Metal ′ Therefore, the connection pad 9 blocks part of the photons from being emitted, resulting in a reduction in the light emitting area. In addition, in the process of manufacturing the light emitting diode of the prior art, it is necessary to form two connecting wires 2 1/2 2 so that the connecting pad 9 and the ohmic contact are respectively connected to the separate welding frame 23 and the cup-shaped welding frame 20. Therefore, it complicates the manufacturing process and increases production costs. The cross-sectional view of Fig. 1 (b) shows the structure of a light-emitting diode, which is different from other technologies. In FIG. 1 (b), for the sake of simplicity, the light generating layer 31 represents the entirety of the plurality of material layers 1 to 8 in 圊 1 (a). In contrast to the structure of the light-emitting diode shown in Fig. 1 (a), the light-generating layer 3 1 is inverted on the welding frame 4 0/4 3. That is, the 'light generating layer 31 is connected to the base portion 40a of the welding frame 40 and the base portion 43a of the welding frame 43 by connecting 塾 9 and the ohmic electrode, respectively. In this case, when an external voltage is applied to the welding frame 40 / ^ 3, the light 30 generated by the light generating layer 31 is emitted to the outside through the light emitting surface gia. Another light-emitting diode, which is described earlier, is disclosed in U.S. Patent No. 5,798,536. In this light-emitting diode, although no connection line is needed 'and the light-emitting area is not reduced because the ohmic electrode is not covered on the light-emitting surface 31a, but because the light-generating layer 31. is connected to a separate welding frame 40/43, so when the external force to the welding frame 40/43 is slightly uneven, the difference of the force is easily transmitted to the light-generating layer 31 via the bridge structure, causing the light-generating layer 31 to be damaged. Therefore, it is difficult to practically use another light emitting diode of the prior art.

5. Description of the invention (4) [Summary of the invention] Therefore, the smooth surface of the present invention is a transparent insulation. The other side of the present invention and the ohmic electrode are respectively ohmic electrodes. Therefore, it is not necessary to borrow another material layer of the present invention. The manufacturing process is reduced, and the broken broken parts are reduced. The substrate is damaged by the #conductor edge base element and connected to the electrode welding frame of the present invention. The photodiode of the present invention is used as the receiving plate system of the upper and first engraved surface layers. The second and another component electrically connected to the substrate is integrated to provide a frame, and the component is formed on an ohm, and the etching is performed as The light-emitting pole element is the first ohmic connection of the first substrate. The purpose of the substrate is located in the area. The purpose of the generation is to prevent the generation of hair. Contains: the contact and the exposed surface. The ohmic and non-contact layer is to provide a light-emitting diode. Therefore, it does not cause a decrease in luminous efficiency to provide a light-emitting diode, which is not not reduced by the ohmic electrode on different planes, that is, the light-emitting surface. The purpose is to provide a light-emitting diode whose wire is connected to a welding frame, so it is simplified. The purpose is to provide a light-emitting diode whose separated welding frame makes it impossible for external forces to endure. In actual use, the light-emitting diode's smooth surface is used to produce multiple layers, forming a two-ohm exposed surface and a first package contact layer. With the first, wherein the ohmic-current-conducting semiconductor is formed on the contact layer, it includes a layer covered with an electrode, and a cover, which respectively emits a layer of light when applied to form a plurality of halves. The improvement is formed by connecting to The second coating electrode is coated in contact with the second coating, and the plurality of different light is generated in the transparent conductor layer. The plural number: the electrode of the transparent substrate, touches, and-is compounded with the light emitting cover of the compound. China and Israel are covered by one end of the semi-open-ended insulated electrode which is insulated by the structured planar element and connected to the second

4 23 166 V. Description of the invention (5) Phase and reliability will not be generated on the coated electrode. The light emitting secondary of the present invention will emit light steps to shapely etch the complex first ohmic contact when the external force is uneven. Movement, so in practice, a light emitting surface method, element, and exposed surface, piece, and the first element cover can produce a first exposed surface, and further include a first covering member and an electrode on the pole. Health relative reliability. The composition of the polar body line is composed of a plurality of contact layers. The light produced by the external force movement of the two-envelope electrode produces several semi-semiconductors in the complex contact. The following steps are modified to form a first contact electrode contact element, which is not uniform. Therefore, several half layers in one of the conductor layers are as follows: Step: making a coating to cover; and wherein, the actual operation of the first and the second coating electrodes also achieves a very good application. The safety and ohmic electrodes are located in different planes, respectively, and include the following steps: making a step of forming a semiconductor layer on a transparent insulating substrate, selectively forming a L-shaped structure, forming an unetched surface in a conductor layer, a plurality of After being etched in each of the semiconductor layers, the transparent insulating substrate is used as a light emitting electrode for connection to the outside to cover one end of the substrate, and touch the other end of the substrate without connecting with the step to connect the When light is applied to the first and the second package, the first and the second cover electrodes do not need to achieve very good safety. [Simplified diagram Single description] The purpose, features, and advantages of the present invention will be more clearly understood from the following description with reference to the accompanying drawings. In these drawings: The sectional views of Figs. 1 (a) to 1 (b) show the light emission of the prior art Diode

Page 8 423166 V. Description of the invention (6) Structure; Figures 2 (a) to 2 (d) show the manufacturing method of the light generating element according to the first embodiment of the present invention; Figures 3 (a) to 3 (b) show Structure of an electrode element according to an embodiment of the present invention; Figures 4 (a) to 4 (b) show a connection method between a light generating element and an electrode element according to an embodiment of the present invention; The structure of the light-emitting diode of the embodiment, the cross-sectional view of FIG. 6 shows the light-emitting element of the light-emitting diode according to the second embodiment of the present invention; and the cross-sectional view of FIG. 7 shows the light-emitting diode according to the third embodiment of the present invention. Polar body light generating element. [Description of symbols] 1 ~ insulation_substrate 2 ~ nucleation layer 3 ~ buffer layer 4 ~ first tie layer 5 ~ light emitting layer 6 ~ second tie layer 7 ~ contact layer 8 ~ N i / Au layer 9 ~ connecting pad

Page 9 423166, V. Description of the invention (7) 10 ~ ohmic electrode 20 ~ cup-shaped welding frame 21/22 ~ connecting wire 23 ~ separate welding frame 30 ~ light 3 1 ~ light generating layer 40 ~ welding frame 43 ~ welding frame 100 ~ light generating element 1 01 ~ transparent insulating substrate 102 ~ core 4 dagger layer 1 03 ~ first type buffer layer 104 ~ first type tie layer 105 ~ light emitting layer 106 ~ second type tie layer 107 ~ second type contact Chips 110 ~ first ohmic contact layer 111 ~ second ohmic contact layer 2 0 0 ~ electrode element 201 ~ substrate 2 0 2 ~ first clad electrode 2 0 3 ~ second clad electrode 2 0 4 ~ first solder Layer 2 0 5 ~ Second solder layer

Page 10 423166 Five 'invention description (8) 3 0 0 ~ light 400 ~ substrate 701 ~ first type semiconductor layer 702 ~ second type semiconductor layer [Detailed description of the preferred embodiment] With reference to Figures 2 to 5, A detailed description of a first embodiment according to the present invention is as follows. Figures 2 (a) to 2 (d) show a method of manufacturing the light generating element 100 according to the first embodiment of the present invention. In Fig. 2 (a), a transparent insulating substrate 101 made of alumina is provided. Subsequently, as shown in FIG. 2 (b), by the conventional epitaxial method, such as CVD (Chemical Vapor Deposition), a plurality of the following semiconductor layers are sequentially formed on one surface 101 a of the transparent insulating substrate 101. : Nucleation layer 102 made of undoped gallium nitride, first type buffer layer 103 made of N-type gallium nitride, and first type tie layer made of N-type aluminum gallium nitride 104, a light emitting layer 105 composed of indium gallium nitride, a second type tie layer 106 composed of P-type aluminum gallium nitride, and a second type contact layer composed of P-type gallium nitride 107 ° Subsequently, in order to define the second ohmic contact layer 110 described below on the first-type buffer layer 103, as shown in FIG. 2 (c), by the conventional money engraving method, for example, ί? Ί E ( Reactive Ion Engraving (Reactive I ο η Etch) to selectively etch part of the second type contact layer I 0 7, part of the second type tie layer 106, part of the light emitting layer 105, part of the first type tie layer

Page 11 4 ^ 3166 V. Description of the invention (9) 1 0 4 and part of the first type buffer layer 103. After the etching is completed, the aforementioned plurality of semiconductor layers form an L-shaped structure. Then, the first ohmic contact layer 111 is formed on the unetched surface in the second type contact layer so as to disperse the current in the operation of the light emitting diode described below, while the second ohmic contact layer 1 1 0 is formed The exposed surface after being etched in the first type buffer layer 103. Therefore, the light generating element 100 of the light emitting diode according to the first embodiment of the present invention is completed, and the light generating element is used to generate light of a predetermined wavelength. 3 (a) to 3 (b) show the structure of an electrode element 2000 according to an embodiment of the present invention. In FIG. 3 (a), a first cladding electrode 202 is formed on one end of a substrate 201 made of an insulating layer, and then, on the other end of the substrate 201, a non-coated electrode is formed. 202 is in contact with the second cladding electrode 203. Therefore, the electrode element 2000 of the light emitting diode according to the embodiment of the present invention is completed, and the electrode element is used to connect to an external power supply (not shown). In the manufacturing process of the light emitting diode according to the embodiment of the present invention, in order to increase the production capacity, a plurality of electrode elements 200 can be manufactured on a single insulating substrate 400 at the same time, as shown in FIG. 3 (a). FIG. 3 (b) is a plan view showing a plurality of electrode elements 200 fabricated on a single insulating substrate 400. As shown in FIG. In FIG. 3 (b), the part enclosed by the dotted line is the single electrode element 2 0 0 described above, and the cross-sectional view taken along the line 3 A-3 A 'shown in FIG. 3 (b) is FIG. 3 (a). 4 (a) to 4 (b) show a connection method between the light generating element 100 and the electrode element 200 according to the embodiment of the present invention. In FIG. 4 (a), a first solder layer 204 and a second solder layer 205 are formed on the first cladding electrode 202 and the second cladding electrode 203, respectively. The second solder layer 205 is thicker than the first solder layer 204 ,

Page 12 423166 V. Description of the Invention (ίο) To compensate for the height difference between the second ohmic contact layer 110 and the first ohmic contact layer 111. Then, as shown in Fig. 4b, A C F (anisotropic conductive film,

Anisotropic Conductive Film) is uniformly coated on the side of the electrode element 200 with a solder layer 'for connecting the light generating element 100. The Acf has conductivity in a direction perpendicular to the substrate 201', but in parallel In the direction of the substrate 201, it is not conductive. Since ACF has been widely used in the manufacturing process of LCD (Liquid Crystal Display), there is no need to repeat it. When the light generating element 100 is connected to the electrode element 2000, the first cladding electrode 202 is 'connected to the first ohmic contact layer η' by the first solder layer 204, whereas the second cladding electrode 203 is by the second solder layer. 205, connected to the second ohmic contact layer 110. Since the ACF is uniformly coated on the surface of the electrode element 200 for connecting the light generating element 100, when the light generating element 100 is connected to the electrode element 200, the required alignment accuracy can be greatly improved. Reduction 'can still achieve a good electrical connection between the light generating element 100 and the electrode element 2000. Therefore, the manufacturing method of the light emitting diode according to the first embodiment of the present invention does not require any connection wire, and the production cost can be reduced. Fig. 5 is a sectional view showing the structure of a light emitting diode according to the first embodiment of the present invention. The operation of the light emitting diode according to the first embodiment of the present invention will be described in detail with reference to FIG. 5 '. In FIG. 5, the first cladding electrode 202 is connected to an external power supply (not shown), and the second cladding electrode 203 is grounded (not shown). When a predetermined voltage is applied to the first cladding electrode 202 by an external power supply (not shown), a current flows in sequence from the first cladding electrode 202 through the first solder layer 204, ACF, and is used for First ohmic contact layer

Page 13 4 23166 V. Description of the invention (11) Light-emitting layer 1 05 111, second-type contact layer 107, second-type tie layer 106, first-type tie layer 104, first-type buffer layer 103, first The two-ohmic contact layer 110, ACF, and the second solder layer 205 reach the second cladding electrode 203. When a current flows through the light emitting layer 105, that is, when a hole ^ electrons pass through the second type contact layer 107 and the second type tie layer 106, and the first type retard layer 103 and the first type tie layer 104. When entering the light emitting layer, the first type binding layer 104 and the second type binding layer 106 limit the electrons and holes to the light emitting layer 105 to increase the light emitting efficiency, and the electrons and holes are in the light emitting layer. In 105, they are combined with each other, so that the potential energy difference between the electrons and the holes is converted into light 300 with a predetermined wavelength, which is determined by the material of the light-emitting layer. Subsequently, the light 300 passes through the transparent insulating substrate 101 and is emitted from the light-emitting surface 101b to the outside. Therefore, in the light-emitting diode according to the first embodiment of the present invention, the light 300 passes through the transparent insulating substrate 101 and is emitted to the outside, so that the light-emitting efficiency is not reduced. Furthermore, the light-emitting surface 10 lb of the light-emitting diode and the ohmic electrode 2 0 2/2 0 3 used to connect to the outside are located on different planes respectively, so the light-emitting area will not be covered by the ohmic electrode 202/203. While lowering. In addition, in the manufacturing method of the light emitting diode according to the first embodiment of the present invention, no connection line is required, and high alignment accuracy is not required, so the production cost is greatly reduced. In any case, in the aforementioned manufacturing method of the light emitting diode according to the first embodiment of the present invention, ACF may not be used. In this case, the production cost is still reduced because no connection cable is required. Furthermore, the electrode element according to the present invention is used to replace the prior art

Page 14 ;, 1 66 V. The welding frame separated in the description of the invention (12), in which the first and second cover electrodes are connected through an insulating substrate, so even if applied to the first and second cover electrodes ^ When the package is uniform, the relative movement of the first and second cladding electrodes does not occur, and the difference in external force cannot be transmitted to the light generating element, which causes damage to the photoelectric characteristics. Therefore, the light emitting diode according to the present invention has very high safety and reliability in practical use. The meaning should be noted, which means that in the aforementioned light-emitting body according to the first embodiment of the present invention, the nucleation layer, the first buffer layer, and the contact layer of the light generating element have been omitted, such as 圊 6. As shown. In addition, although in the light-emitting diode of the first embodiment of the foregoing invention, the light generating element has a double heterojunction structure composed of a "" -type and a second-type binding layer and a light-emitting layer ~ ( Double Heterojunction Structure), but the invention can also be applied to light-emitting diodes with a light-generating element that is a homojunction structure (Homojunction Structure) or a single heterojunction structure (Single Hetero junction Structure). The second and third embodiments according to the present invention will be described in detail with reference to FIGS. 6 and 7 ′. Fig. 6 is a sectional view showing a light generating element of a light emitting diode according to a second embodiment of the present invention. In FIG. 6, the light generating element includes a transparent insulating substrate 101 ′ formed on the surface of the transparent insulating substrate 101 and the first type tie layer 104, and the first type tie layer 104 is not etched. A light-emitting layer 105 on the surface, a second ohmic contact layer 110 formed on the exposed surface of the first-type tethering layer 104 after being etched, a second-type tethering layer 106 formed on the light-emitting layer 105, and The first ohmic contact formed on the second type binding layer

Page 15 4 2 3 16 6 5 'Explanation of invention (13) Layer 1 1 1. Since the manufacturing method and operation of the light emitting diode according to the second embodiment of the present invention are similar to those of the first embodiment, they will not be described again. Fig. 7 is a sectional view showing a light generating element of a light emitting diode according to a third embodiment of the present invention. In FIG. 7, the light generating element includes a transparent insulating substrate 1 0 1, a first type semiconductor layer 701 formed on a surface of the transparent insulating substrate 1 0 1 a, and a first type semiconductor layer 701 formed in the first type semiconductor layer 701. The second-type semiconductor layer 702 on the etched surface, the second ohmic contact layer 110 formed on the exposed surface after the etching in the first-type semiconductor layer 701, and the first ohmic layer formed on the second-type semiconductor layer 702 Contact layer 111. Except that the doped impurities are different, the first type semiconductor layer 701 and the second type semiconductor layer 702 are composed of the same semiconductor, and between the first type semiconductor layer 701 and the second type semiconductor layer 702 The joint is a homogeneous joint. In other words, in this case, the light-emitting element of the light-emitting diode has a homogeneous junction structure. In addition to the doped impurities, the first type semiconductor layer 701 and the second type semiconductor layer 702 are also composed of different semiconductors. The connection between the first type semiconductor layer 701 and the second type semiconductor layer 702 The face is a heterojunction. In other words, in this case, the light generating element of the light emitting diode has a single heterojunction structure. Since the manufacturing method and operation of the light emitting diode according to the third embodiment of the present invention are similar to those of the first embodiment, they will not be described again. Although the preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, those skilled in the art should understand that the present invention is not limited to these preferred embodiments and is implemented in these preferred embodiments. Various modifications and changes can be made without departing from the spirit and scope of the present invention.

Page 丨 6

Claims (1)

4-23 1 β6 6. Scope of patent application --- 1. A light-emitting diode whose light-emitting surface and ohmic electrode are located on different planes, respectively, including: A light-generating element for generating and emitting light, the light-generating element includes : A plurality of semiconductor layers are formed on a transparent insulating substrate; a first ohmic contact layer is formed on an unaccepted surface of the plurality of semiconductor layers; and a second ohmic contact layer is formed on the receiving surfaces of the plurality of semiconductor layers On the exposed surface after etching, the improvement is that the transparent insulating substrate is used as a light emitting surface, and further includes: an electrode element for connecting to the outside, the electrode element includes: a first covering electrode 'covering the substrate One end is connected to the first ohmic contact layer; and the second cladding electrode 'covers the other end of the substrate, is not in contact with the first cladding electrode, and is connected to the second ohmic contact Layer, where 'when the external force is not uniform on the first and second cladding electrodes', the first and second cladding electrodes will not generate relative motion, so in actual operation Use to achieve very good security and reliability. 2 If the light-emitting surface and the ohmic electrode of the first patent application are located on different planes of the light-emitting diode, wherein the plurality of semiconductor layers include a first-type semiconductor layer formed on the transparent insulating substrate, and A second type semiconductor layer on the first type semiconductor layer. P. 17 323166 ^ 6. Scope of patent application 3. If the light-emitting diode of the same plane as the second scope of the patent application, the first type semiconductor layer and the light-emitting diode of the same plane as the third scope of the patent application are on the transparent insulating substrate. With that layer. The light emitting surface of the item is separated from the ohmic electrode by the plurality of semiconductor layers, and the light emitting surface of the item is separated from the ohmic electrode by the plurality of semiconductor layers. The light emitting surface is separated from the ohmic electrode by the first semiconductor layer. , Bit light layer. Do not include, the light-emitting surface of the bit-type buffer and the ohmic electrode are located separately. The plurality of semiconductor layers further include the second-type contact between the first ohmic contact layer. The diode is on the second type semiconductor layer and the layer. 6 'If the light emitting diode of the same plane as item 5 of the scope of the patent application, the transparent insulating substrate and the light emitting surface and the ohmic electrode of the ^ are respectively located in the plurality of semiconductor layers, and the interposition between the bit-type buffer layers is further included. Nucleation layer. For example, the luminous surface and ohmic electrode of item 6 of the patent claim are located on a non-planar light-emitting diode, respectively, wherein the first cladding electrode is connected to the first ohmic contact layer by a first solder layer. . 8 · If the luminous surface and ohmic electrode of item 7 of the patent application are located separately, Page 18 4 2 3 1 6 6 VI. Patent application scope Co-planar light-emitting diodes, wherein the second cladding electrode is connected to the second ohmic contact layer through a second solder layer '. 9. If the light-emitting surface and the ohmic electrode of the eighth patent application are located on different planes of the light-emitting diode, wherein the first solder layer is connected to the first ohmic contact by an anisotropic conductive film (ACF) On the floor. The light-emitting surface and the ohmic electrode of item 9 of the patent application are located on different planes of the light-emitting diode, respectively, and the conductive layer is a non-isotropic layer. (ACF) is connected to the second ohmic contact layer. Different ΐί: range number 1. The luminous surface of the term and the ohmic electrode are respectively located at the electrode, the light-emitting monopolar body, wherein each of the plurality of semiconductor layers is composed of a group three or five compound semiconductor based on gallium nitride. If you do n’t want to reply, please specify the light-emitting surface and ohmic electrode of item 11 respectively: the light-emitting diode of the surface, in which the transparent insulating substrate is the light-emitting surface of the alumina in the patent scope of item 12 Separately from the ohmic electrode? ° type 'surface light-emitting diode, where the first type is P-type, the second type is the female surface of the patent application No. 12 of the light-emitting surface and the ohmic electrode are located respectively Page 19 423166 : Same type flat. The light emitting diode of the surface thinks that the first type is p-type, the second type is made of ^ = face :: the step of forming a semiconductor layer made of light-emitting two nuclei with electrodes on different planes to generate and emit light. On a transparent insulating substrate; a light generating element comprising: a semiconductor device for forming a plurality of semiconductor layers to selectively etch one of the plurality of semiconductor layers into an L-shaped structure; The improvement of the exposed surface after the engraving consists in that the transparent insulation step is made to form a first step without connecting with the first cladding step, wherein 'when applied to the first and the ohmic contact layer. The ohmic contact layer in the plurality of semiconductor layers does not receive an ohmic contact layer. The etched substrate in the plurality of semiconductor layers serves as a light emitting surface, and further includes an electrode element connected to the outside in the following steps, including: covering the electrode to cover the electrode. One end of the substrate; and two covering electrodes to cover the other end of the substrate and the electrodes are in contact; and for connecting the light generating element and the electrode element, the first One is not uniform with the external force on the second cladding electrode, and the second cladding electrode will not generate relative motion. --- Eight very good safety and reliability in operation β 1 6 is not as good as the manufacturing method of the light emitting surface and the ohmic electrode of the patent application No. 15 where the flat surface of the light emitting diode manufacturing method 'where the formation The semiconductor layer is included in steps, forming a first type semiconductor layer on the transparent insulating substrate, and then forming a second type semiconductor layer on the first type semiconductor layer. The method for manufacturing a light-emitting diode in which the light-emitting surface and the ohmic electrode are located on the same plane, respectively, in the scope of the patent application No. 16 of Shen 5 Qing Patent, wherein the step of forming a semiconductor layer t further includes forming the second-type semiconductor layer. Previously, a light emitting layer was formed on the first type semiconductor layer. 8 · If the light emitting surface and the ohmic electrode of claim 17 in the patent claim are separately manufactured on different planes, the step of forming the semiconductor layer further includes, in forming the first type semiconductor layer, Before the light emitting layer and the second type semiconductor layer, a first plastic buffer layer is formed on the transparent insulating substrate. 19. For example, if the steps of applying for a patent on different planes of the second light-emitting step are more detailed, they are superficial. The manufacturing method of the light emitting surface and the polar body around item 18, which forms a second type contact layer in which the ohmic electrode is respectively located, and forms a semiconductor layer in the second type semiconductor layer 20. The light emitting surface and the ohmic electrode are respectively located as in a patent application Scope number; [9 items Page 21 6. Method for manufacturing light-emitting monopoles with different planes in the scope of patent application, wherein the step of forming a semiconductor layer further includes, in forming the first-type buffer layer, the first-type semiconductor layer, the light-emitting layer, Before the second type semiconductor layer and the second type contact f, a nucleation layer is formed on the transparent insulating substrate. 21. The manufacturing method of a light emitting diode with a light emitting surface and an ohmic electrode at different positions and different planes according to the scope of application for patent No. 20, wherein the connecting step includes forming the first and second solder layers on the first And the second one-jfs electrode; and the first and second cladding electrodes are connected to the first and the second ohmic contact layer by the first and the second solder layers, respectively. ^ 2 2. If the light emitting surface and the ohmic electrode of item 21 in the scope of the patent application are separately manufactured on the same plane as the light emitting diode, the connection step further includes coating an anisotropic conductive film (ACF) on the On the side of the electrode element having the first and the second solder layer; + connecting the first cladding electrode to the first ohmic contact layer via the first solder layer and the anisotropic conductive film; and The first cladding electrode is connected to the second ohmic contact layer through the first solder layer and the anisotropic film. 23. If the light-emitting surface and ohmic electrode of item 22 of the patent application are located separately Page 22 423166 VI. Method for manufacturing light-emitting diodes with different planes for patent application, wherein the anisotropic conductive film 'has conductivity in a direction perpendicular to the substrate of the electrode element, but is parallel to the electrode The component is not conductive in the direction of the substrate. -24 · If the light emitting surface and the ohmic electrode are in different planes, the manufacturing method of the light emitting diode is located on different planes respectively according to item 23 of the scope of patent application, wherein each of the plurality of semiconductor layers is made of three based on gallium nitride. It consists of five compound semiconductors. 25. According to the manufacturing method of the light-emitting diodes in which the light-emitting surface and the ohmic electrode are located on different planes according to item 24 of the patent application scope, wherein the transparent insulating substrate is formed of alumina. 26 'A manufacturing method of a light emitting diode in which the light emitting surface and the ohmic electrode are located on different planes respectively in the scope of the patent application No. 25, wherein the first type is an N type' and the second type is a P type. 7. A method for manufacturing a light-emitting diode in which the light-emitting surface and the ohmic electrode are located on different planes according to item 25 of the scope of the patent application, wherein the first type is a p-type and the second type is an N-type. Page 23