CN107946374A - A kind of Schottky rectifier and manufacture method with surface impurity concentration regulatory region - Google Patents
A kind of Schottky rectifier and manufacture method with surface impurity concentration regulatory region Download PDFInfo
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- CN107946374A CN107946374A CN201610890159.4A CN201610890159A CN107946374A CN 107946374 A CN107946374 A CN 107946374A CN 201610890159 A CN201610890159 A CN 201610890159A CN 107946374 A CN107946374 A CN 107946374A
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- 239000012535 impurity Substances 0.000 title claims abstract description 83
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 29
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000000407 epitaxy Methods 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- -1 platinum Chemical compound 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
Abstract
The invention discloses a kind of Schottky rectifier and manufacture method with surface impurity concentration regulatory region；The Schottky rectifier with surface impurity concentration regulatory region includes the first conductivity type substrate of heavy doping layer, the first conductive type epitaxial layer, the second conduction type protection ring region, the first conduction type surface impurity concentration regulatory region, field dielectric layer, anode metal layer and cathode metal layer is lightly doped.The Schottky rectifier and its manufacture method with surface impurity concentration regulatory region, can make obtained product keep high breakdown reverse voltage, on the premise of the characteristic such as low forward voltage drop and high impact-resistant reliability, also have the advantages that low-leakage current.
Description
Technical field
The present invention relates to power semiconductor power electronic devices technical field, is specifically that one kind carries surface impurity concentration tune
Save the Schottky rectifier and manufacture method in area.
Background technology
Power semiconductor rectifier, is widely used in power converter and power supply.Two kinds of common semiconductor rectifiers
Structure is PIN rectifiers and Schottky rectifier respectively.
Wherein PIN rectifiers forward voltage drop is big, reverse recovery time length, but it is smaller to leak electricity, and has superior high temperature
Stability, is mainly used in the mesohigh scope of more than 300V.
Schottky rectifier is mainly used in the mesolow scope of below 200V, especially non-in the application of 100V voltage class
Often extensively.Schottky rectifier forward voltage drop is small, and reverse recovery time is short, but reverse leakage current is higher, and high temperature reliability is poor.
In the practical application of Schottky rectifier, high breakdown reverse voltage, low forward voltage drop, low-leakage current and highly reliable
Property be always product pursue performance objective.Disclosed typical Schottky rectifier, in order to which the shock resistance for realizing high can
By property, usually surface high impurity concentration of the one layer of impurity concentration higher than impurities concentration is generally formed in surfaces of active regions
Area.Such Schottky rectifier has a high shock resistance reliability, but also just because of the presence in surface high impurity concentration area, its
Leakage current becomes larger.
The content of the invention
Present invention aim to address the problems such as leakage current is big in the prior art, propose keeping Schottky rectifier high anti-
To breakdown voltage, on the premise of low forward voltage drop and high impact-resistant reliability, there is the device of the advantage of low-leakage current.
For realize technical solution that the object of the invention uses be it is such, it is a kind of with surface impurity concentration regulatory region
Schottky rectifier, it is characterised in that：Including the first conductivity type substrate of heavy doping layer, the first conduction type extension is lightly doped
Layer, the second conduction type protection ring region, the first conduction type surface impurity concentration regulatory region, field dielectric layer, anode metal layer and
Cathode metal layer.
The first conductivity type substrate of heavy doping layer is covered on cathode metal layer.
First conductive type epitaxial layer that is lightly doped is covered on heavy doping the first conductivity type substrate layer.
The second conduction type protection ring region and the first conduction type surface impurity concentration regulatory region are covered in and gently mix
Part surface on miscellaneous first conductive type epitaxial layer.The second conduction type protection ring region, the first conduction type surface
The upper surface of impurity concentration regulatory region is coplanar.
The field dielectric layer is covered in the part surface on the first conductive type epitaxial layer.
The anode metal layer is covered on dielectric layer and the first conduction type surface impurity concentration regulatory region.The sun
Pole metal layer is also covered in the part surface on the second conduction type protection ring region.
A kind of manufacture method of the Schottky rectifier with surface impurity concentration regulatory region, it is characterised in that including with
Lower step：
1) the first conductive type epitaxial layer will be lightly doped to be covered on heavy doping the first conductivity type substrate layer.
2) field dielectric layer is covered in and be lightly doped on the first conductive type epitaxial layer.
3) the second conduction type protection ring region of closed annular structure is formed using the first mask layer.Its annular circle segment
For active area.
4) the field dielectric layer of the active region is etched using the second mask layer.
5) using the 3rd mask layer, square part surface forms injection window on the active area.
6) impurity of the first conduction type is injected to the injection window low energy that step 5) is formed.
7) after removing photoresist, high annealing forms the first conduction type surface impurity concentration regulatory region.
8) in dielectric layer, the upper surface of the first conduction type surface impurity concentration regulatory region and the second conduction type protection ring
Anode metal layer is formed on part surface on area.
9) cathode metal layer is covered on the lower surface of heavy doping the first conductivity type substrate layer.
Further, the second conduction type protection ring region is the loop configuration of closed form.The intermediate region that annular is surrounded
For active area.
Further, the field dielectric layer is located at outside active area.The first conduction type surface impurity concentration regulatory region
Inside active area.
Further, the first conduction type surface impurity concentration regulatory region is an independent connected region or multiple only
Vertical connected region.
The first conduction type surface impurity concentration regulatory region can be contacted with the second conduction type protection ring region, also may be used
Not contact.
The first conduction type surface impurity concentration regulatory region is covered in the subregion of active area.
Further, the field dielectric layer is also covered in the part surface on the second conduction type protection ring region.
The field dielectric layer is not contacted with the first conduction type surface impurity concentration regulatory region.
Further, the anode metal layer includes conventional metal layer and schottky barrier layer.The schottky barrier layer position
Between silicon surface and conventional metal layer.The alloy that the schottky barrier layer is formed You metal and silicon such as platinum, Nie platinum is formed.
The solution have the advantages that unquestionable, the Schottky with surface impurity concentration regulatory region in the present invention
Rectifier and preparation method thereof, makes resulting product and keeps high breakdown reverse voltage, low forward voltage drop and high impact-resistant are reliable
On the premise of property, there is low-leakage current.
Brief description of the drawings
Fig. 1 is 1 cross-sectional view of new device of the embodiment of the present invention；
Fig. 2 is 2 cross-sectional view of new device of the embodiment of the present invention；
Fig. 3 is the new device forward characteristic contrast schematic diagram of the embodiment of the present invention；
Fig. 4 is the new device reverse characteristic curve contrast schematic diagram of the embodiment of the present invention；
In figure：The first conductivity type substrate of heavy doping layer 10, be lightly doped the first conductive type epitaxial layer 20, the second conductive-type
Type protection ring region 21, the first conduction type surface impurity concentration regulatory region 22, field dielectric layer 30, anode metal layer 40 and cathode gold
Belong to layer 50.
Embodiment
With reference to embodiment, the invention will be further described, but should not be construed the above-mentioned subject area of the present invention only
It is limited to following embodiments.Without departing from the idea case in the present invention described above, according to ordinary skill knowledge and used
With means, various replacements and change are made, should all be included within the scope of the present invention.
Embodiment 1：
A kind of Schottky rectifier with surface impurity concentration regulatory region, it is characterised in that：Led including heavy doping first
Electric type substrates layer 10, be lightly doped the first conductive type epitaxial layer 20, the second conduction type protection ring region 21, the first conduction type
Surface impurity concentration regulatory region 22, field dielectric layer 30, anode metal layer 40 and cathode metal layer 50.
The first conductivity type substrate of heavy doping layer 10 is covered on cathode metal layer 50.
First conductive type epitaxial layer 20 that is lightly doped is covered on the first conductivity type substrate of heavy doping layer 10.
Second conduction type protection, the 21 and first conduction type surface impurity concentration regulatory region 22 of ring region is covered in
The part surface on the first conductive type epitaxial layer 20 is lightly doped.The second conduction type protection ring region 21, first is conductive
The upper surface of type surface impurity concentration regulatory region 22 is coplanar.The second conduction type protection ring region 21 is the annular of closed form
Structure.The intermediate region that annular is surrounded is active area.
The first conduction type surface impurity concentration regulatory region 22 is an independent connected region or multiple independent
Connected region.The first conduction type surface impurity concentration regulatory region 22 can connect with the second conduction type protection ring region 21
Touch, can not also contact.The first conduction type surface impurity concentration regulatory region 22 is covered in the subregion of active area.
The field dielectric layer 30 is covered in the part surface on the first conductive type epitaxial layer 20.The field dielectric layer 30
Outside active area.The first conduction type surface impurity concentration regulatory region 22 is located inside active area.The field medium
Layer 30 is also covered in the part surface on the second conduction type protection ring region 21.30 and first conduction type of field dielectric layer
Surface impurity concentration regulatory region 22 does not contact.
The anode metal layer 40 is covered on 30 and first conduction type surface impurity concentration regulatory region 22 of dielectric layer.
The anode metal layer 40 is also covered in the part surface on the second conduction type protection ring region 21.
The anode metal layer 40 includes conventional metal layer and schottky barrier layer.The schottky barrier layer is located at silicon layer
Between surface and conventional metal layer.The alloy that the schottky barrier layer is formed You metal and silicon such as platinum, Nie platinum is formed.
Embodiment 2：
A kind of manufacture method of Schottky rectifier with surface impurity concentration regulatory region in embodiment 1, its feature
It is, comprises the following steps：
1) the first conductive type epitaxial layer 20 will be lightly doped to be covered on the first conductivity type substrate of heavy doping layer 10.
2) field dielectric layer 30 is covered in and be lightly doped on the first conductive type epitaxial layer 20.
3) the second conduction type protection ring region 21 of closed annular structure is formed using the first mask layer.Its annular is around portion
It is divided into active area.
4) the field dielectric layer 30 of the active region is etched using the second mask layer.
5) using the 3rd mask layer, square part surface forms injection window on the active area.
6) impurity of the first conduction type is injected to the injection window low energy that step 5) is formed.
7) after removing photoresist, high annealing forms the first conduction type surface impurity concentration regulatory region 22.
8) protected in dielectric layer 30, the upper surface of the first conduction type surface impurity concentration regulatory region 22 and the second conduction type
Anode metal layer 40 is formed on part surface on retaining ring area 21.
9) cathode metal layer 50 is covered on the lower surface of the first conductivity type substrate of heavy doping layer 10.
Canonical parameter is chosen in the key step：
First conduction type is N-type, and the second conduction type is p-type.
N+ type substrate layers are more than 19 power of doping concentration arsenic impurities substrate, N-type epitaxy layer is impurity concentration 15 to 16
The phosphorus impurities epitaxial layer of power；
P-type protection ring region is formed using high annealing after the boron injection of 13 power of dosage；
High annealing after N-type surface impurity concentration regulatory region uses dosage as the phosphorus injection of 12 powers, energy about 60KeV
Mode is formed；
The alloy that schottky barrier layer is formed You metal and silicon such as platinum, Nie platinum is formed；
About 1 micron of the dielectric layer in field.
Embodiment 3：
Using the method in embodiment 2, a kind of Schottky rectifier with surface impurity concentration regulatory region is made；Its
In, the first conduction type is N-type, and the second conduction type is p-type.
As shown in Figure 1, the surface impurity concentration that the present embodiment is produced adjusts high pressure Schottky rectifier, its feature exists
In：Including the first conductivity type substrate of heavy doping layer 10, the first conductive type epitaxial layer 20, the protection of the second conduction type is lightly doped
Ring region 21, the first conduction type surface impurity concentration regulatory region 22, field dielectric layer 30, anode metal layer 40 and cathode metal layer
50。
The N-type epitaxy layer 20 is covered on N+ types substrate layer 10.The N+ types substrate layer 10 is doping concentration 19 times
Arsenic impurities substrate more than side.The N-type epitaxy layer 20 is impurity concentration 2 × 1015cm-3Phosphorus impurities epitaxial layer.
The p-type protection ring region 21 is covered in the subregion of N-type epitaxy layer 20.P-type protection ring region 21 is the ring of closure
Shape structure, its circular intermediate region are known as active area.The p-type protection ring region 21 uses dosage 3 × 1013cm-2Boron injection
1100 degree of annealing are formed afterwards.
The N-type surface impurity concentration regulatory region 22 is made of multiple independent connected regions；The N-type surface impurity is dense
Degree regulatory region 22 is located at the subregion on N-type epitaxy layer 20, and in active area, but it is not covered with the whole of active area
Surface, and be in contact with p-type protection ring region 21；The N-type surface impurity concentration regulatory region 22 uses dosage as 1 × 1012cm-2,
Formed after the phosphorus injection that energy is 100KeV by high annealing.
The field dielectric layer 30 is covered in the part surface on N-type epitaxy layer 20.The field dielectric layer 30 is positioned at active
Outside area.The field dielectric layer 30 is also covered in the part surface on p-type protection ring region 21；The field dielectric layer 30 and N-type table
Face impurity concentration regulatory region 22 does not contact.About 1 micron of the field dielectric layer 30.
The anode metal layer 40 includes conventional metal layer and schottky barrier layer；The schottky barrier layer is located at silicon layer
Between surface and conventional metal layer；The alloy that the schottky barrier layer is formed You platinum and silicon is formed.The anode metal layer 40
Also cover on dielectric layer 30 on the scene.
The cathode metal layer 50 is located under N+ types substrate layer 10.
Embodiment 4：
Schottky rectifier with surface impurity concentration regulatory region is made using the production method in embodiment 2.Wherein,
First conduction type is N-type, and the second conduction type is p-type.
As shown in Fig. 2, the surface impurity concentration that the present embodiment is produced adjusts high pressure Schottky rectifier, its feature exists
In：Including the first conductivity type substrate of heavy doping layer 10, the first conductive type epitaxial layer 20, the protection of the second conduction type is lightly doped
Ring region 21, the first conduction type surface impurity concentration regulatory region 22, field dielectric layer 30, anode metal layer 40 and cathode metal layer
50。
The N-type epitaxy layer 20 is covered on N+ types substrate layer 10.The N+ types substrate layer 10 is doping concentration 19 times
Arsenic impurities substrate more than side.The N-type epitaxy layer 20 is impurity concentration 2 × 1015cm-3Phosphorus impurities epitaxial layer.
The p-type protection ring region 21 is covered in the subregion of N-type epitaxy layer 20.P-type protection ring region 21 is the ring of closure
Shape structure, its circular intermediate region are known as active area.The p-type protection ring region 21 uses dosage 3 × 1013cm-2Boron injection
1100 degree of annealing are formed afterwards.
The N-type surface impurity concentration regulatory region 22 is located at the subregion on N-type epitaxy layer 20, and is located at active area
It is interior, and protect ring region 21 not contact with p-type；The N-type surface impurity concentration regulatory region 22 uses dosage as 1 × 1012cm-2, energy
Formed after measuring the phosphorus injection for 100KeV by high annealing.
The field dielectric layer 30 is covered in the part surface on N-type epitaxy layer 20.The field dielectric layer 30 is positioned at active
Outside area.The field dielectric layer 30 is also covered in the part surface on p-type protection ring region 21；The field dielectric layer 30 and N-type table
Face impurity concentration regulatory region 22 does not contact.About 1 micron of the field dielectric layer 30.
The anode metal layer 40 includes conventional metal layer and schottky barrier layer；The schottky barrier layer is located at silicon layer
Between surface and conventional metal layer；The alloy that the schottky barrier layer is formed You platinum and silicon is formed.The anode metal layer 40
Also cover on dielectric layer 30 on the scene.
The cathode metal layer 50 is located under N+ types substrate layer 10.
It is illustrated in figure 3 the forward characteristic of the new device of embodiment.Compared with conventional device, same anode current
Under, the forward conduction voltage of new device is almost identical with the forward conduction voltage of conventional device, therefore new device maintain it is low
The characteristics of forward voltage drop.
It is illustrated in figure 4 the reverse characteristic curve of the new device of embodiment.As can be seen that compared with conventional device, new device
High breakdown reverse voltage characteristic is maintained, and there is relatively low leakage current.
Claims (7)
- A kind of 1. Schottky rectifier with surface impurity concentration regulatory region, it is characterised in that：It is conductive including heavy doping first Type substrates layer (10), be lightly doped the first conductive type epitaxial layer (20), the second conduction type protection ring region (21), the first conduction Type surface impurity concentration regulatory region (22), field dielectric layer (30), anode metal layer (40) and cathode metal layer (50)；The first conductivity type substrate of heavy doping layer (10) is covered on cathode metal layer (50)；First conductive type epitaxial layer (20) that is lightly doped is covered on heavy doping the first conductivity type substrate layer (10)；The second conduction type protection ring region (21) and the first conduction type surface impurity concentration regulatory region (22) are covered in The part surface on the first conductive type epitaxial layer (20) is lightly doped；The second conduction type protection ring region (21), first The upper surface of conduction type surface impurity concentration regulatory region (22) is coplanar；The field dielectric layer (30) is covered in the part surface on the first conductive type epitaxial layer (20)；The anode metal layer (40) be covered in dielectric layer (30) and the first conduction type surface impurity concentration regulatory region (22) it On；The anode metal layer (40) is also covered in the part surface on the second conduction type protection ring region (21).
- 2. a kind of manufacture method of the Schottky rectifier with surface impurity concentration regulatory region, it is characterised in that including following Step：1) the first conductive type epitaxial layer (20) will be lightly doped to be covered on heavy doping the first conductivity type substrate layer (10)；2) field dielectric layer (30) is covered in and be lightly doped on the first conductive type epitaxial layer (20)；3) the second conduction type protection ring region (21) of closed annular structure is formed using the first mask layer；Its annular circle segment For active area；4) the field dielectric layer (30) of the active region is etched using the second mask layer；5) using the 3rd mask layer, square part surface forms injection window on the active area；6) impurity of the first conduction type is injected to the injection window low energy that step 5) is formed；7) after removing photoresist, high annealing forms the first conduction type surface impurity concentration regulatory region (22)；8) protected in dielectric layer (30), the upper surface of the first conduction type surface impurity concentration regulatory region (22) and the second conduction type Anode metal layer (40) is formed on part surface on retaining ring area (21)；9) cathode metal layer (50) is covered on the lower surface of heavy doping the first conductivity type substrate layer (10).
- A kind of 3. Schottky rectifier with surface impurity concentration regulatory region according to claim 1, it is characterised in that： The second conduction type protection ring region (21) is the loop configuration of closed form；The intermediate region that annular is surrounded is active area.
- 4. a kind of Schottky rectifier with surface impurity concentration regulatory region according to claim 1 or 3, its feature exist In：The field dielectric layer (30) is located at outside active area；The first conduction type surface impurity concentration regulatory region (22) is located at Inside active area.
- 5. a kind of Schottky rectifier with surface impurity concentration regulatory region according to claim 1 or 3, its feature exist In：The first conduction type surface impurity concentration regulatory region (22) is an independent connected region or multiple independent connections Region；The first conduction type surface impurity concentration regulatory region (22) can contact with the second conduction type protection ring region (21), It can not also contact；The first conduction type surface impurity concentration regulatory region (22) is covered in the subregion of active area.
- A kind of 6. Schottky rectifier with surface impurity concentration regulatory region according to claim 1, it is characterised in that： The field dielectric layer (30) is also covered in the part surface on the second conduction type protection ring region (21)；The field dielectric layer (30) does not contact with the first conduction type surface impurity concentration regulatory region (22).
- 7. a kind of Schottky rectifier and manufacturer with surface impurity concentration regulatory region according to claim 1 or 2 Method, it is characterised in that：The anode metal layer (40) includes conventional metal layer and schottky barrier layer；The schottky barrier layer Between silicon surface and conventional metal layer；The alloy structure that metal and the silicon such as the schottky barrier layer You platinum, Nie platinum are formed Into.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860273A (en) * | 2018-12-29 | 2019-06-07 | 厦门芯光润泽科技有限公司 | MPS diode component and preparation method thereof |
| CN109888024A (en) * | 2018-12-29 | 2019-06-14 | 厦门芯光润泽科技有限公司 | MPS diode component and preparation method thereof |
| CN113658860A (en) * | 2021-06-30 | 2021-11-16 | 中山大学 | Manufacturing method of Schottky diode |
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| JP2008135592A (en) * | 2006-11-29 | 2008-06-12 | Shindengen Electric Mfg Co Ltd | Schottky barrier semiconductor device |
| JP2013175607A (en) * | 2012-02-24 | 2013-09-05 | Nippon Inter Electronics Corp | Schottky barrier diode |
| CN206179873U (en) * | 2016-10-12 | 2017-05-17 | 重庆中科渝芯电子有限公司 | Schottky rectifier with surface impurity concentration regulatory region |
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2016
- 2016-10-12 CN CN201610890159.4A patent/CN107946374A/en active Pending
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|---|---|---|---|---|
| JP2008135592A (en) * | 2006-11-29 | 2008-06-12 | Shindengen Electric Mfg Co Ltd | Schottky barrier semiconductor device |
| JP2013175607A (en) * | 2012-02-24 | 2013-09-05 | Nippon Inter Electronics Corp | Schottky barrier diode |
| CN206179873U (en) * | 2016-10-12 | 2017-05-17 | 重庆中科渝芯电子有限公司 | Schottky rectifier with surface impurity concentration regulatory region |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860273A (en) * | 2018-12-29 | 2019-06-07 | 厦门芯光润泽科技有限公司 | MPS diode component and preparation method thereof |
| CN109888024A (en) * | 2018-12-29 | 2019-06-14 | 厦门芯光润泽科技有限公司 | MPS diode component and preparation method thereof |
| CN109888024B (en) * | 2018-12-29 | 2024-04-02 | 厦门芯光润泽科技有限公司 | MPS diode device and preparation method thereof |
| CN109860273B (en) * | 2018-12-29 | 2024-04-02 | 厦门芯光润泽科技有限公司 | MPS diode device and preparation method thereof |
| CN113658860A (en) * | 2021-06-30 | 2021-11-16 | 中山大学 | Manufacturing method of Schottky diode |
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