CN110416318A - A kind of gallium nitride based diode structure and preparation method thereof - Google Patents
A kind of gallium nitride based diode structure and preparation method thereof Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 137
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 194
- 230000004888 barrier function Effects 0.000 claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000000872 buffer Substances 0.000 claims abstract description 36
- 239000002346 layers by function Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000000926 separation method Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 29
- 238000002161 passivation Methods 0.000 claims description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052593 corundum Inorganic materials 0.000 claims description 12
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 12
- 239000002356 single layer Substances 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 6
- 238000005036 potential barrier Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 7
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 4
- 238000001039 wet etching Methods 0.000 description 17
- 238000001259 photo etching Methods 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000007853 buffer solution Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
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- H01L29/6609—Diodes
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Abstract
The invention discloses a kind of gallium nitride based diode structures and preparation method thereof, including substrate, including substrate, the GaN base buffer layer above substrate, the GaN base channel layer above GaN base buffer layer, the In above GaN base channel layerxAlyGa1‑x‑yN barrier layer, is set to InxAlyGa1‑x‑yCathode above N barrier layer, is set to InxAlyGa1‑x‑yAnode above N barrier layer, with cathode separation certain distance, and it is set to InxAlyGa1‑x‑yP-type oxide functional layer above N barrier layer and positioned at anode metal electrodes both ends.Space-charge region is formed using p-type oxide and semiconductor, the two-dimensional electron gas of part depletion schottky metal electrode edge, the electric field offset under high back voltage is concentrated, to improve reverse withstand voltage.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of gallium nitride based diode structure and preparation method thereof.
Background technique
GaN is as the third generation semiconductor material with wide forbidden band after Si, GaAs, with its high heat conductance, height
The features such as thermal stability, high-breakdown-voltage, big electronics saturation drift velocity, develop in high frequency and power semiconductor fast
Speed.Schottky diode be all kinds of power modules, UPS, photovoltaic power generation, electric car, wireless charging application in it is essential
Original part is mainly used for rectification, afterflow and protection applications.Compare traditional silicon substrate Schottky diode, gallium nitride based schottky
Diode has more high voltage, is suitable for the circuit system of 200V or more, there are boundless to answer in power semiconductor field
Use space.The majority carrier device that gallium nitride based schottky diode is formed as a kind of high electron mobility material simultaneously,
Possess the feature that reverse recovery time is short, power transition loss is low.
The cathode and a Xiao Te that the GaN heterojunction schottky diode of traditional structure is formed by an Ohm contact electrode
Base contacts the anode that electrode is formed and constitutes.GaN base heterojunction schottky diode, since its rectification characteristic places one's entire reliance upon Xiao Te
Base junction, so the promotion of its breakdown electric field is limited to schottky barrier height, resistance surge current energy larger with reverse leakage
The poor disadvantage of power.Meanwhile if improving schottky barrier height using specific process means, it is likely to result in unlatching electricity
Pressure increases.So the characteristic needs of GaN heterojunction schottky diode are compromised between cut-in voltage and reverse leakage.
In order to which excellent characteristics, the prior arts such as the high critical breakdown electric field that makes full use of GaN material propose field plate structure
To improve the voltage endurance of GaN base Schottky diode.Field plate techniques are a kind of traditional to be used to improve the common of device pressure resistance
Terminal technology.In GaN base Schottky barrier diode the basic structure of field plate be by the method for deposit, photoetching and etching,
One layer of dielectric film is prepared in schottky metal electrode periphery, Schottky electrode is suitably extended to the top of medium, thus
Electrode periphery forms a circle MIM element structure.Field plate structure is by changing anode (Schottky electrode) edge consumption
The bending degree on layer boundary to the greatest extent reduces peak electric field strength to change the field distribution in depletion layer, and Lai Tigao device is hit
Wear voltage.But the ability that this method promotes breakdown voltage is limited.
In addition to this, in order to improve the pressure resistance of gallium nitride Schottky diode, the prior art proposes another solution,
That is the gallium nitride Schottky diode of part p-GaN cap layers.This structure introduces p-GaN cap layers at the edge of diode anode,
Space-charge region, part depletion anode electrode edge lower section are formed using p-GaN and the GaN base N-shaped barrier layer of unintentional doping
Two-dimensional electron gas, offset the electric field that is formed under high back voltage and concentrate.But due to the etching between p-GaN and AlGaN potential barrier
It selects smaller, brings certain difficulty for device technology.
Summary of the invention
The purpose of the present invention is to provide a kind of gallium nitride based diode structures and preparation method thereof, disclose a kind of p-type
The hetero-junctions GaN base pn- Schottky compound diode of oxide enhancing, can retain the good characteristic of heterojunction structure, utilize p
Type oxide and semiconductor form space-charge region, and the two-dimensional electron gas of part depletion schottky metal electrode edge is offset anti-
Electric field under to high pressure is concentrated, to improve reverse withstand voltage.
The technical scheme adopted by the invention is as follows:
A kind of gallium nitride based diode structure, including substrate；GaN base buffer layer above substrate；It is slow positioned at GaN base
Rush the GaN base channel layer above layer；In above GaN base channel layerxAlyGa1-x-yN barrier layer, wherein 0≤x < 1,0≤y
< 1, and x+y ≠ 0；It is set to InxAlyGa1-x-yCathode above N barrier layer；It is set to InxAlyGa1-x-yAbove N barrier layer, with
The anode of cathode separation certain distance；It is set to InxAlyGa1-x-yP above N barrier layer and positioned at anode metal electrodes both ends
Type oxide functional layer.
Further, the p-type oxide includes p-NiO, p-ZnO, p-Al2O3Or they any two or three
Composite construction.
Further, of length no more than anode of the p-type oxide functional layer is to the 1/2 of cathode distance.
Further, the anode is " T " font structure, and p-type oxide functional layer part is located at below anode.
Further, the cathode be Ohm contact electrode, the Ohm contact electrode be by single-layer or multi-layer metal with
InxAlyGa1-x-yThe electrode of N barrier layer formation Ohmic contact.
Further, the anode is Schottky contact electrode, and the Schottky contact electrode is by single-layer or multi-layer gold
Category and InxAlyGa1-x-yThe electrode of N barrier layer formation Schottky contacts.
Further, the anode is to be formed by the GaN base semiconductor contact of Schottky contact electrode and recess etch, institute
The GaN base semiconductor for stating recess etch is by partial etching InxAlyGa1-x-yN barrier layer or all etching InxAlyGa1-x-yN
Barrier layer or all etching InxAlyGa1-x-yAfter N barrier layer again etched portions GaN base channel layer and formed；The anode is filled out
It fills in anode groove area.
Further, the anode is composition metal anode, and the composition metal anode is Schottky contact electrode package
Ohm contact electrode and formed, i.e., the both ends of the described clad metal electrode and GaN base semiconductor contact are by Schottky contact electrode
It constitutes, is made of with the central area of GaN base semiconductor contact Ohm contact electrode.
Further, the anode includes field plate structure, i.e., is provided with passivation layer below anode edge.
Further, the substrate can be Si, GaN, sapphire or SiC material.
The present invention also provides the preparation methods of the gallium nitride based diode, comprising the following steps:
(1) GaN base buffer layer is grown on substrate, GaN base channel layer is grown on GaN base buffer layer, in GaN base channel
In is grown on layerxAlyGa1-x-yN barrier layer；
(2) in InxAlyGa1-x-yP-type oxide film is formed above N barrier layer, and p-type oxidation is defined by photolithography method
Object function layer region is etched the p-type oxide film except defined range completely by etching；
(3) in InxAlyGa1-x-yActive area is defined on N barrier layer；
(4) device ohmic contact regions are defined on the active area, and deposit ohmic contacts electrode, form cathode；
(5) device Schottky contact area is defined on the active area, and Schottky contacts electrode, form anode.
It further, further include in In after the step (1)xAlyGa1-x-yAnode recess etch is defined on N barrier layer
Region carries out anode recess etch.
It further, further include using PECVD, MOCVD, ALD or sputtering method deposition passivation after the step (2)
Layer.
Further, ohmic contact regions further include ohmic contact regions in composition metal anode in the step (4),
That is the central area of composition metal anode and GaN base semiconductor contact is formed by Ohm contact electrode.
Further, the step (4), in (5), deposit the Ohm contact electrode or Schottky contact electrode it
Before, it further include using ICP, RIE or wet etching method removal passivation layer.
Further, the passivation layer includes Si3N4、Al2O3、AlN、Y2O3、La2O3、Ta2O5、TiO2、HfO2、ZrO2In
Single or multi-layer structure.
Compared with prior art, the invention has the following advantages that
(1) in InxAlyGa1-x-yThe setting of N barrier layer upper surface is located at the p-type oxide function at anode metal electrodes both ends
Layer, using space-charge region is formed between p-type oxide and semiconductor, so that the two-dimensional electron gas in part depletion channel, delays
The electric field for solving anode edge is concentrated, and is promoted the reverse withstand voltage of device and is resisted the ability of surge；
(2) when anode is " T " font structure, i.e., when p-type oxide functional layer part is located at below anode edge, device is anti-
The width expansion that will make the space-charge region formed between p-type oxide and anode to biasing, further increases the reversed of device
Pressure resistance and the ability for resisting surge.Simultaneously as p-type oxide and GaN base semiconductor form potential barrier, in reverse bias, gesture
It builds height and is greater than schottky barrier height, advantageously reduce device creepage；
(3) compared with forming part p-GaN cap layers and promoting the technique of device reverse withstand voltage, p-type oxide is raw in the present invention
Long technique is relatively easy.In addition, being located at In with etchingxAlyGa1-x-yP-GaN technique above N barrier layer is compared, p-type oxide
With InxAlyGa1-x-yN barrier layer has higher etching selection ratio, is conducive to when carrying out p-type oxide functional layer etching, energy
It is enough steadily to stop at InxAlyGa1-x-yAbove N barrier layer.
Detailed description of the invention
Fig. 1 is the gallium nitride based diode structure chart in embodiment 1；
Fig. 2 is the gallium nitride based diode structure chart in embodiment 2；
Fig. 3 is the gallium nitride based diode structure chart in embodiment 3；
Fig. 4 is the gallium nitride based diode structure chart in embodiment 4；
Each appended drawing reference is respectively as follows: 1- substrate, 2-GaN base buffer layer, 3-GaN base channel layer, 4-In in figurexAlyGa1-x- yN barrier layer, 5- Ohm contact electrode, 6- Schottky contact electrode, 7-p type oxide functional layer, 8- passivation layer.
Specific embodiment
The following describes the present invention in detail with reference to examples.
Embodiment 1
A kind of gallium nitride based diode, structure include: including substrate 1；GaN base buffer layer 2 above substrate 1；
GaN base channel layer 3 above GaN base buffer layer 2；In above GaN base channel layer 3xAlyGa1-x-yN barrier layer 4,
Wherein 0≤x < 1,0≤y < 1, and x+y ≠ 0；
The structure of the GaN base buffer layer 2 is AlN nucleating layer, GaN buffer layer, AlGaN buffer layer from the bottom to top；
It is set to InxAlyGa1-x-yThe cathode of 4 top of N barrier layer；The cathode is Ohm contact electrode 5, described ohm
Contacting electrode 5 is by single-layer or multi-layer metal and InxAlyGa1-x-yThe electrode of the formation Ohmic contact of N barrier layer 4；
It is set to InxAlyGa1-x-y4 top of N barrier layer, the anode with cathode separation certain distance；The anode is Xiao Te
Base contacts electrode 6, and the Schottky contact electrode 6 is by single-layer or multi-layer metal and InxAlyGa1-x-yN barrier layer 4 forms Xiao
The electrode of Te Ji contact；
It is set to InxAlyGa1-x-y4 top of N barrier layer and the p-type oxide functional layer for being located at anode metal electrodes both ends
7；The p-type oxide includes p-NiO, p-ZnO, p-Al2O3Or their any two or three composite constructions；The p-type
Of length no more than anode of oxide functional layer 7 is to the 1/2 of cathode distance.
The preparation method of the gallium nitride based diode the following steps are included:
(1) heterogenous junction epitaxy grow: by Metallo-Organic Chemical Vapor deposition or molecular beam epitaxy method, Si,
GaN base buffer layer 2 is grown in SiC, GaN or Sapphire Substrate 1, GaN base channel layer 3 is grown on GaN base buffer layer 2, in GaN
In is grown on base channel layer 3xAlyGa1-x-yN barrier layer 4 forms InxAlyGa1-x-yN/GaN heterogenous junction epitaxy structure；
(2) p-type oxide functional layer is grown: in InxAlyGa1-x-yPass through Metallo-Organic Chemical Vapor above N barrier layer 4
Deposition or atomic layer deposition or the method for sputtering form p-type oxide film；
(3) p-type oxide functional layer etches: defining 7 region of p-type oxide functional layer by photolithography method, passes through dry method
(ICP, RIE) or wet etching method is etched to etch the p-type oxide film except defined range completely；Further,
When p-type oxide is p-NiO, wet etching is carried out using sulfuric acid or hydrochloric acid；When p-type oxide is p-ZnO, using Cl base
Gas carries out RIE or ICP etching or carries out wet etching using HF and its buffer solution；When p-type oxide is p-Al2O3When, it adopts
Wet etching is carried out with HCl；
(4) device isolation: defining active area by photoetching process, carries out covering protection to active area using photoresist, adopts
With RIE, ICP etching or the method for N ion implanting, make the In except active areaxAlyGa1-x-yThe failure of N/GaN heterojunction structure,
To realize the isolation between different components；
(5) cathode ohmic contact is formed: Ohmic contact forming region is defined on the active area by photoetching, by using steaming
Plating or sputtering method successively deposit tetra- kinds of metals of Ti, Al, Ni, Au, form metal ohmic contact film, then pass through removing work
Skill forms metal ohmic contact electrode；By RTA rta technique at 600-900 DEG C, make metal electrode with
InxAlyGa1-x-yOhmic contact, as cathode are formed between N barrier layer 4；
(6) anode Schottky contacts to be formed: Schottky contacts forming region is defined on the active area by photoetching, by making
Tri- kinds of metals of Ni, Au, Ti are successively deposited with vapor deposition or sputtering method, Schottky contact metal film is formed, then passes through removing
Technique forms Schottky contact electrode, as anode.
Embodiment 2
A kind of gallium nitride based diode, structure include: including substrate 1；GaN base buffer layer 2 above substrate 1；
GaN base channel layer 3 above GaN base buffer layer 2；In above GaN base channel layer 3xAlyGa1-x-yN barrier layer 4,
Wherein 0≤x < 1,0≤y < 1, and x+y ≠ 0；
The structure of the GaN base buffer layer 2 is AlN nucleating layer, GaN buffer layer, AlGaN buffer layer from the bottom to top；
It is set to InxAlyGa1-x-yThe cathode of 4 top of N barrier layer；The cathode is Ohm contact electrode 5, described ohm
Contacting electrode 5 is by single-layer or multi-layer metal and InxAlyGa1-x-yThe electrode of the formation Ohmic contact of N barrier layer 4；
It is set to InxAlyGa1-x-y4 top of N barrier layer, the anode with cathode separation certain distance；The anode is " T "
Font structure；The anode be Schottky contact electrode 6, the Schottky contact electrode 6 be by single-layer or multi-layer metal with
InxAlyGa1-x-yThe electrode of the formation Schottky contacts of N barrier layer 4；
It is set to InxAlyGa1-x-y4 top of N barrier layer and p-type oxide functional layer 7 of the part below anode；Institute
Stating p-type oxide includes p-NiO, p-ZnO, p-Al2O3Or their any two or three composite constructions；The p-type oxidation
Of length no more than anode of object functional layer 7 is to the 1/2 of cathode distance.
The preparation method of the gallium nitride based diode other with embodiment 1.
Embodiment 3
A kind of gallium nitride based diode, structure include: including substrate 1；GaN base buffer layer 2 above substrate 1；
GaN base channel layer 3 above GaN base buffer layer 2；In above GaN base channel layer 3xAlyGa1-x-yN barrier layer 4,
Wherein 0≤x < 1,0≤y < 1, and x+y ≠ 0；
The structure of the GaN base buffer layer 2 is AlN nucleating layer, GaN buffer layer, AlGaN buffer layer from the bottom to top；
It is set to InxAlyGa1-x-yThe cathode of 4 top of N barrier layer；The cathode is Ohm contact electrode 5, described ohm
Contacting electrode 5 is by single-layer or multi-layer metal and InxAlyGa1-x-yThe electrode of the formation Ohmic contact of N barrier layer 4；
It is set to InxAlyGa1-x-y4 top of N barrier layer, the anode with cathode separation certain distance；The anode is " T "
Font structure；The anode is to be formed by Schottky contact electrode 6 and the GaN base semiconductor contact of recess etch, the groove
The GaN base semiconductor of etching is by partial etching InxAlyGa1-x-yN barrier layer 4 or all etching InxAlyGa1-x-yN potential barrier
Layer 4 or all etching InxAlyGa1-x-yAfter N barrier layer 4 again etched portions GaN base channel layer 3 and formed；The anode is filled out
It fills in anode groove area；The anode includes field plate structure, i.e., is provided with passivation layer 8 below anode edge；
It is set to InxAlyGa1-x-yAbove N barrier layer 4 and anode groove area edge and part are partially fill in positioned at anode
The p-type oxide functional layer 7 of lower section；The p-type oxide includes p-NiO, p-ZnO, p-Al2O3Or they any two kinds or
Three kinds of composite construction；Of length no more than anode of the p-type oxide functional layer 7 is to the 1/2 of cathode distance.
The preparation method of the gallium nitride based diode the following steps are included:
(1) heterogenous junction epitaxy grow: by Metallo-Organic Chemical Vapor deposition or molecular beam epitaxy method, Si,
GaN base buffer layer 2 is grown in SiC, GaN or Sapphire Substrate 1, GaN base channel layer 3 is grown on GaN base buffer layer 2, in GaN
In is grown on base channel layer 3xAlyGa1-x-yN barrier layer 4 forms InxAlyGa1-x-yN/GaN heterogenous junction epitaxy structure；
(2) anode recess etch: anode recess etch region is defined by photoetching process, using photoresist to recess etch
Region in addition carries out covering protection, using the method for RIE, ICP or wet etching, by InxAlyGa1-x-y4 part of N barrier layer
Or all etching or all etching InxAlyGa1-x-yEtched portions GaN base channel layer 3 again after N barrier layer 4；
(3) p-type oxide functional layer is grown: in InxAlyGa1-x-yIt is heavy by Metallo-Organic Chemical Vapor on N barrier layer 4
Long-pending or atomic layer deposition or the method for sputtering grow p-type oxide layer；
(4) p-type oxide functional layer etches: defining p-type oxide function layer region by photoetching process, uses photoresist
Covering protection is carried out to p-type oxide function layer region, using the method for RIE, ICP or wet etching, removes defined range
P-type oxide film in addition；Further, when p-type oxide is p-NiO, wet etching is carried out using sulfuric acid or hydrochloric acid；
When p-type oxide is p-ZnO, RIE or ICP is carried out using Cl base gas and is etched or using HF and its buffer solution progress wet process
Etching；When p-type oxide is p-Al2O3When, wet etching is carried out using HCl；
(5) passivation layer deposition: using PECVD, MOCVD, ALD or sputtering method deposit passivation layer 8, and passivation layer 8 includes
Si3N4、Al2O3、AlN、Y2O3、La2O3、Ta2O5、TiO2、HfO2、ZrO2In single or multi-layer structure；
(6) device isolation: defining active area by photoetching process, carries out covering protection to active area using photoresist, adopts
With RIE, ICP etching or the method for N ion implanting, make the In except active areaxAlyGa1-x-yThe failure of N/GaN heterojunction structure,
To realize the isolation between different components；
(7) Ohm contact electrode is formed: define Ohmic contact forming region on the active area by photoetching, using ICP,
The passivation layer of RIE or wet etching method removal Ohmic contact forming region, are successively deposited by using vapor deposition or sputtering method
Tetra- kinds of metals of Ti, Al, Ni, Au form metal ohmic contact film, then by stripping technology, form metal ohmic contact electricity
Pole；By RTA rta technique at 600-900 DEG C, make metal electrode and InxAlyGa1-x-yEurope is formed between N barrier layer 4
Nurse contact, as cathode；
(8) Schottky contact electrode is formed: being defined Schottky contacts forming region on the active area by photoetching, is used
ICP, RIE or wet etching method removal Schottky contacts forming region passivation layer, by using vapor deposition or sputtering method according to
Secondary tri- kinds of metals of deposit Ni, Au, Ti form Schottky contact metal film, then by stripping technology, form Schottky contacts
Metal electrode, as anode.
Embodiment 4
A kind of gallium nitride based diode, structure include: including substrate 1；GaN base buffer layer 2 above substrate 1；
GaN base channel layer 3 above GaN base buffer layer 2；In above GaN base channel layer 3xAlyGa1-x-yN barrier layer 4,
Wherein 0≤x < 1,0≤y < 1, and x+y ≠ 0；
The structure of the GaN base buffer layer 2 is AlN nucleating layer, GaN buffer layer, AlGaN buffer layer from the bottom to top；
It is set to InxAlyGa1-x-yThe cathode of 4 top of N barrier layer；The cathode is Ohm contact electrode 5, described ohm
Contacting electrode 5 is by single-layer or multi-layer metal and InxAlyGa1-x-yThe electrode of the formation Ohmic contact of N barrier layer 4；
It is set to InxAlyGa1-x-y4 top of N barrier layer, the anode with cathode separation certain distance；The anode is by Xiao
Te Ji contact electrode 6 wraps up Ohm contact electrode 5 and the GaN base semiconductor contact of recess etch is formed, i.e. electrode and semiconductor
The both ends of contact are made of Schottky contact electrode, and central area is made of Ohm contact electrode；The GaN base of the recess etch
Semiconductor is by partial etching InxAlyGa1-x-yN barrier layer 4 or all etching InxAlyGa1-x-yN barrier layer 4 or whole
Etch InxAlyGa1-x-yAfter N barrier layer again etched portions GaN base channel layer 3 and formed；The anode is filled in anode groove area
In；The anode includes field plate structure, i.e., is provided with passivation layer 8 below anode edge；
It is set to InxAlyGa1-x-y4 top of N barrier layer and p-type oxide functional layer 7 of the part below anode；Institute
Stating p-type oxide includes p-NiO, p-ZnO, p-Al2O3Or their any two or three composite constructions；The p-type oxidation
Of length no more than anode of object functional layer 7 is to the 1/2 of cathode distance.
The preparation method of the gallium nitride based diode the following steps are included:
(1) heterogenous junction epitaxy grow: by Metallo-Organic Chemical Vapor deposition or molecular beam epitaxy method, Si,
GaN base buffer layer 2 is grown in SiC, GaN or Sapphire Substrate 1, GaN base channel layer 3 is grown on GaN base buffer layer 2, in GaN
In is grown on base channel layer 3xAlyGa1-x-yN barrier layer 4 forms InxAlyGa1-x-yN/GaN heterogenous junction epitaxy structure；
(2) anode recess etch: anode recess etch region is defined by photoetching process, using photoresist to recess etch
Region in addition carries out covering protection, using the method for RIE, ICP or wet etching, by InxAlyGa1-x-y4 part of N barrier layer
Or all etching or all etching InxAlyGa1-x-yEtched portions GaN base channel layer 3 again after N barrier layer 4；
(3) p-type oxide functional layer is grown: in InxAlyGa1-x-yIt is heavy by Metallo-Organic Chemical Vapor on N barrier layer 4
Long-pending or atomic layer deposition or the method for sputtering grow p-type oxide layer；
(4) p-type oxide functional layer etches: defining p-type oxide function layer region by photoetching process, uses photoresist
Covering protection is carried out to p-type oxide function layer region, using the method for RIE, ICP or wet etching, removes institute's definition region
P-type oxide film in addition；Further, when p-type oxide is p-NiO, wet etching is carried out using sulfuric acid or hydrochloric acid；
When p-type oxide is p-ZnO, RIE or ICP is carried out using Cl base gas and is etched or using HF and its buffer solution progress wet process
Etching；When p-type oxide is p-Al2O3When, wet etching is carried out using HCl；
(5) passivation layer deposition: using PECVD, MOCVD, ALD or sputtering method deposit passivation layer 8, and passivation layer 8 includes
Si3N4、Al2O3、AlN、Y2O3、La2O3、Ta2O5、TiO2、HfO2、ZrO2In single or multi-layer structure；
(6) device isolation: defining active area by photoetching process, carries out covering protection to active area using photoresist, adopts
With RIE, ICP etching or the method for N ion implanting, make the In except active areaxAlyGa1-x-yThe failure of N/GaN heterojunction structure,
To realize the isolation between different components；
(7) cathode is formed with anode ohmic contact electrode: define Ohmic contact forming region on the active area by photoetching,
Including the ohmic contact regions in cathode ohmic contact region and composite anode；It is removed using ICP, RIE or wet etching method
The passivation layer of Ohmic contact forming region successively deposits tetra- kinds of metals of Ti, Al, Ni, Au, shape by using vapor deposition or sputtering method
At metal ohmic contact film, then by stripping technology, metal ohmic contact electrode is formed；Pass through RTA at 600-900 DEG C
Rta technique makes metal electrode and InxAlyGa1-x-yN barrier layer 4 forms Ohmic contact；
(8) anode Schottky contact electrode is formed: defining the Schottky electrode of composite anode on the active area by photoetching
Forming region, using ICP, RIE or wet etching method removal composite anode forming region passivation layer, by using vapor deposition or
Sputtering method successively deposits tri- kinds of metals of Ni, Au, Ti, forms Schottky contact metal film, forms Schottky contacts.Then lead to
Stripping technology is crossed, composition metal anode is formed.
The above-mentioned detailed description carried out referring to embodiment to a kind of gallium nitride based diode structure and preparation method thereof, is to say
Bright property without being restrictive, several embodiments can be enumerated according to limited range, therefore of the invention total not departing from
Change and modification under body design, should belong within protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based diode structure, which is characterized in that including substrate；GaN base buffer layer above substrate；Position
GaN base channel layer above GaN base buffer layer；In above GaN base channel layerxAlyGa1-x-yN barrier layer, wherein 0
≤ x < 1,0≤y < 1, and x+y ≠ 0；It is set to InxAlyGa1-x-yCathode above N barrier layer；It is set to InxAlyGa1-x-yN gesture
Anode above barrier layer, with cathode separation certain distance；It is set to InxAlyGa1-x-yAbove N barrier layer and it is located at anode metal
The p-type oxide functional layer at electrode both ends.
2. gallium nitride based diode structure according to claim 1, which is characterized in that the p-type oxide includes p-
NiO、p-ZnO、p-Al2O3Or their any two or three composite constructions.
3. gallium nitride based diode structure according to claim 1 or 2, which is characterized in that the p-type oxide functional layer
Of length no more than anode to the 1/2 of cathode distance.
4. gallium nitride based diode structure according to claim 1 or 2, which is characterized in that the anode is " T " font knot
Structure, p-type oxide functional layer part are located at below anode.
5. gallium nitride based diode structure according to claim 1 or 2, which is characterized in that the cathode is Ohmic contact
Electrode, the Ohm contact electrode are by single-layer or multi-layer metal and InxAlyGa1-x-yThe electricity of N barrier layer formation Ohmic contact
Pole.
6. gallium nitride based diode structure according to claim 1 or 2, which is characterized in that the anode is schottky junctions
Touched electrode, the Schottky contact electrode are by single-layer or multi-layer metal and InxAlyGa1-x-yN barrier layer forms Schottky contacts
Electrode.
7. gallium nitride based diode structure according to claim 1 or 2, which is characterized in that the anode is by Schottky
The GaN base semiconductor contact of contact electrode and recess etch is formed, and the GaN base semiconductor of the recess etch is by partial etching
InxAlyGa1-x-yN barrier layer or all etching InxAlyGa1-x-yN barrier layer or all etching InxAlyGa1-x-yN potential barrier
Layer after again etched portions GaN base channel layer and formed；The anode is filled in anode groove area.
8. gallium nitride based diode structure according to claim 1 or 2, which is characterized in that the anode is composition metal
Anode, the composition metal anode are that Schottky contact electrode wraps up Ohm contact electrode and formed, i.e., the described composition metal sun
Pole electrode and the both ends of GaN base semiconductor contact are made of Schottky contact electrode, the central area with GaN base semiconductor contact
It is made of Ohm contact electrode.
9. gallium nitride based diode structure according to claim 1 or 2, which is characterized in that the anode includes field plate knot
Passivation layer is provided with below structure, i.e. anode electrode edge.
10. a kind of preparation method of gallium nitride based diode as described in any one of claims 1-9, which is characterized in that packet
Include following steps:
(1) GaN base buffer layer is grown on substrate, GaN base channel layer is grown on GaN base buffer layer, on GaN base channel layer
Grow InxAlyGa1-x-yN barrier layer；
(2) in InxAlyGa1-x-yP-type oxide film is formed above N barrier layer, and p-type oxide function is defined by photolithography method
Layer region is etched the p-type oxide film except defined range completely by etching；
(3) in InxAlyGa1-x-yActive area is defined on N barrier layer；
(4) device ohmic contact regions are defined on the active area, and deposit ohmic contacts electrode, form cathode；
(5) device Schottky contact area is defined on the active area, and Schottky contacts electrode, form anode.
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| CN113594228A (en) * | 2021-07-26 | 2021-11-02 | 西安电子科技大学 | Gallium nitride Schottky barrier diode with heterojunction terminal and preparation method |
| CN115775730A (en) * | 2023-02-13 | 2023-03-10 | 江苏能华微电子科技发展有限公司 | Quasi-vertical structure GaN Schottky diode and preparation method thereof |
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| CN108682625A (en) * | 2018-05-22 | 2018-10-19 | 西安电子科技大学 | RESURF GaN base Schottky-barrier diodes based on field plate and p-type GaN cap |
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| JP2009272441A (en) * | 2008-05-07 | 2009-11-19 | Furukawa Electric Co Ltd:The | Semiconductor device and semiconductor device manufacturing method |
| US20100078683A1 (en) * | 2008-09-30 | 2010-04-01 | Sanken Electric Co., Ltd. | Semiconductor device |
| CN108682625A (en) * | 2018-05-22 | 2018-10-19 | 西安电子科技大学 | RESURF GaN base Schottky-barrier diodes based on field plate and p-type GaN cap |
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| CN113594228A (en) * | 2021-07-26 | 2021-11-02 | 西安电子科技大学 | Gallium nitride Schottky barrier diode with heterojunction terminal and preparation method |
| CN115775730A (en) * | 2023-02-13 | 2023-03-10 | 江苏能华微电子科技发展有限公司 | Quasi-vertical structure GaN Schottky diode and preparation method thereof |
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