CN109346529A - A kind of GaN base Schottky barrier diode with composite potential barrier layer - Google Patents
A kind of GaN base Schottky barrier diode with composite potential barrier layer Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims abstract description 105
- 239000002131 composite material Substances 0.000 title claims abstract description 60
- 238000005036 potential barrier Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 abstract description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 68
- 229910002601 GaN Inorganic materials 0.000 description 67
- 230000005684 electric field Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Abstract
The present invention relates to a kind of GaN base Schottky barrier diode with composite potential barrier layer, including substrate layer, the buffer layer on the substrate layer, the channel layer on the buffer layer；Composite potential barrier layer on the channel layer, wherein the composite potential barrier layer includes the first barrier layer, the second barrier layer and the third barrier layer between the first barrier layer and the second barrier layer；Cathode on second barrier layer；Composite anode on first barrier layer；Intrinsic GaN cap on first barrier layer.The cut-in voltage that there is the GaN base Schottky barrier diode of composite potential barrier layer of the embodiment of the present invention device is reduced while improving device electric breakdown strength, the contradiction between device electric breakdown strength and cut-in voltage is alleviated, the breakdown characteristics and reliability of device are improved.
Description
Technical field
The invention belongs to microelectronics technologies, and in particular to a kind of GaN base Schottky barrier with composite potential barrier layer
Diode.
Background technique
With the development of microelectric technique, first generation Si semiconductor power device and second generation GaAs semiconductor power device
Performance have been approached the theoretical limit that its material itself determines.It is further reduced the chip area of semiconductor power device, improves
The performances such as working frequency, reduction conducting resistance, raising breakdown voltage become the focus studied both at home and abroad.And with gallium nitride
(GaN) show one's talent in terms of preparing high performance power device in recent years for the semiconductor material with wide forbidden band of representative, application potential
It is huge.GaN base Schottky barrier diode (Schottky Barrier Diode, SBD) is substitution Si base schottky potential barrier two
The ideal component of pole pipe.However, all there are many deficiencies from theory to technology for GaN base SBD device at present, performance is far away
Reach due level.Therefore, there are also very big potentialities to be exploited for GaN base SBD device.
In order to which excellent characteristics, the prior arts such as the high critical breakdown electric field that makes full use of GaN material propose following two
Method improves the voltage endurance of GaN base SBD device.The first is the pressure resistance that GaN base SBD device is improved by field plate structure
Characteristic, field plate techniques are a kind of traditional common terminal technology for being used to improve device pressure resistance.Field plate in GaN base SBD device
Basic structure is to prepare one layer of dielectric film in schottky metal electrode periphery by the method for deposit, photoetching and etching, will
Schottky electrode suitably extends to the top of medium, to form a circle MIM element structure in electrode periphery.
Field plate structure passes through the bending degree for changing anode (Schottky electrode) edge depletion layer boundary, to change the electricity in depletion layer
Field distribution reduces peak electric field strength, to improve the breakdown voltage of device.However the introducing of field plate can be such that device parasitic capacitor increases
Greatly, the high frequency and switching characteristic of device are influenced.Second is the pressure resistance spy that GaN base SBD device is improved by protection ring structure
Property, protection ring structure is also one of the structure generallyd use in current GaN base SBD device (the especially device of vertical structure).
This technique uses the method for selective oxidation first, forms layer of oxide layer at the edge of Schottky contacts, then basic herein
Upper diffusion or ion implanting form one layer of p-type and protect ring structure.Protect ring structure can effective modulation device surface field, make device
Part transverse electric field distribution is more uniform, to improve the breakdown voltage of device.But the realization of ring structure is protected to depend on half
The part doping that controllable precise is carried out in conductor material, will generally be realized by thermal diffusion or ion implantation technique.For
GaN material, diffusion coefficient of the p type impurity (such as Mg) in GaN is very low, so that can not be realized with the method for thermal diffusion accurate
Part doping；And ion implantation technique is not yet mature, caused lattice damage is difficult to be eliminated with the method for annealing.
In conclusion the prior art will affect its of device while improving the voltage endurance of traditional GaN base SBD device
His performance；And in traditional GaN base SBD device, Schottky contact barrier will affect the positive cut-in voltage of device and anti-
To pressure resistance, so that the two is difficult to realize higher performance indicator simultaneously.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of GaN with composite potential barrier layer
Base schottky barrier diode.The technical problem to be solved in the present invention is achieved through the following technical solutions:
The embodiment of the invention provides a kind of GaN base Schottky barrier diodes with composite potential barrier layer, including substrate
Layer, the buffer layer on the substrate layer, the channel layer on the buffer layer；Further include:
Composite potential barrier layer on the channel layer, wherein the composite potential barrier layer includes the first barrier layer, the second gesture
Barrier layer and third barrier layer, third barrier layer is between first barrier layer and the second barrier layer；
Cathode on second barrier layer；
Composite anode on first barrier layer；
Intrinsic GaN cap on the third barrier layer.
It in one embodiment of the invention, further include being covered on the third barrier layer, the intrinsic GaN cap, institute
State the passivation layer on composite anode and the cathode.
In one embodiment of the invention, the material of first barrier layer and the second barrier layer includes AlxGa1- xN, wherein x range is 0.2~0.3.
In one embodiment of the invention, the third abarrier layer material includes AlxGa1-xN, wherein x range is 0.05
~0.2.
In one embodiment of the invention, the composite anode includes Ohmic contact and Schottky contacts, wherein described
Ohmic contact is located on first barrier layer, and the Schottky contacts are covered in the Ohmic contact and first barrier layer
On.
In one embodiment of the invention, the length of the third barrier layer be less than or equal to the cathode with it is described compound
The distance between anode.
In one embodiment of the invention, the length of the intrinsic GaN cap be less than or equal to the cathode with it is described multiple
The half of distance between Heyang pole.
Compared with prior art, beneficial effects of the present invention:
1, the GaN base SBD device with composite potential barrier layer of the invention reduces while improving device electric breakdown strength
The cut-in voltage of device, to alleviate the contradiction between device electric breakdown strength and cut-in voltage so that the two have simultaneously compared with
High performance indicator improves the breakdown characteristics and reliability of device.
2, present invention introduces composite potential barrier layer and intrinsic GaN cap, the first barrier layer, the second barrier layer in composite potential barrier layer
The two-dimensional electron gas (two dimensional electron gas, 2DEG) formed between third barrier layer and channel layer is dense
Degree is different, is conducive to depletion region extending transversely；2DEG at intrinsic GaN cap and channel forms RESURF (Reduced
SURface Field reduces surface field) effect, the high electric field peak of composite anode edge can be effectively reduced；Composite potential barrier
The collective effect of layer and intrinsic GaN cap keeps depletion region extending transversely and completely depleted, in intrinsic GaN cap right end and yin
Pole edge introduces a new electric field spike respectively, keeps device surface field distribution more uniform, to improve hitting for device
Wear voltage.
3, the present invention is contacted with anode Schottky using anode ohmic contact and is collectively constituted composite anode, and composite anode is by field
Control 2DEG channel switches principle is introduced into GaN base SBD device, instead of traditional GaN base SBD device using Schottky come control switch
Conduction mechanism so that device cut-in voltage is minimized.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the GaN base SBD device with composite potential barrier layer provided in an embodiment of the present invention；
Fig. 2 is a kind of scale diagrams of the GaN base SBD device with composite potential barrier layer provided in an embodiment of the present invention；
Fig. 3 is another cathode site schematic diagram provided in an embodiment of the present invention；
Fig. 4 is a kind of groove structure schematic diagram provided in an embodiment of the present invention；
Fig. 5 is a kind of structural schematic diagram for traditional GaN base SBD device that the prior art provides；
Fig. 6 is the GaN base SBD device provided in an embodiment of the present invention with composite potential barrier layer and traditional GaN base SBD device
Transfer characteristic compare figure；
Fig. 7 is the GaN base SBD device provided in an embodiment of the present invention with composite potential barrier layer and traditional GaN base SBD device
Reverse withstand voltage field distribution compare figure.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
Referring to Figure 1, Fig. 1 is a kind of knot of the GaN base SBD device with composite potential barrier layer provided in an embodiment of the present invention
Structure schematic diagram, comprising:
Substrate layer 101；Buffer layer 102 on substrate layer 101；Channel layer 103 on buffer layer 102.
Composite potential barrier layer on channel layer 103, further, composite potential barrier layer include the first barrier layer 1041, the
Two barrier layers 1042 and third barrier layer 105, third barrier layer 105 be located at the first barrier layer 1041 and the second barrier layer 1042 it
Between；The preparation process of composite potential barrier layer are as follows: the Al of epitaxial growth high Al contents first on channel layer 103xGa1-xN barrier layer,
Then the Al of high Al contents is etchedxGa1-xThe middle part of N barrier layer forms the first barrier layer 1041 and the second gesture to channel layer 103
Barrier layer 1042 grows the Al of low Al component between the first barrier layer 1041 and the second barrier layer 1042xGa1-xN forms third
Barrier layer 105.
Further, the length l of third barrier layer 1053Less than or equal between cathode 107 and the composite anode away from
From referring to Fig. 2, Fig. 2 is that a kind of size of the GaN base SBD device with composite potential barrier layer provided in an embodiment of the present invention is shown
It is intended to；The length l of third barrier layer 1053The 2DEG need to be made completely depleted in third barrier layer 105, i.e. third barrier layer 105
Length l3More than or equal to the length of 2DEG depletion region.
Further, the first barrier layer 1041 and the second barrier layer 1042 are all made of the Al of high Al contentsxGa1-xN, wherein
The content of Al, that is, x range is 0.2~0.3；And third barrier layer 105 is using the Al of low Al componentxGa1-xN material, wherein
Content, that is, x range of Al is 0.05~0.2.
Cathode 107 on the second barrier layer 1042 forms ohm and connects between cathode 107 and the second barrier layer 1042
Touching；Further, due to the length l of third barrier layer 10532DEG need to be made completely depleted in third barrier layer 105, therefore,
Cathode 107 can also be located on the second barrier layer 1042 and third barrier layer 105 simultaneously, refer to Fig. 3, and Fig. 3 is that the present invention is real
Another cathode site schematic diagram of example offer is provided.
Composite anode on the first barrier layer 1041, further, composite anode include Ohmic contact 108 and Xiao Te
Base contact 110, Ohmic contact 108 is located on the first barrier layer 1041, and Schottky contacts 110 are covered on Ohmic contact 108 and the
On one barrier layer 1041；Further, it is etched with groove structure 109 in the first barrier layer 1041, Schottky contact electrode 110 covers
It covers in groove structure 109, refers to Fig. 4, Fig. 4 is a kind of groove structure schematic diagram provided in an embodiment of the present invention.
It should be noted that in embodiments of the present invention, Ohmic contact, which refers to, forms Europe between the first barrier layer 1041
The Ohm contact electrode of nurse contact, Schottky contacts refer to the Schottky that Schottky contacts are formed between the first barrier layer 1041
Electrode is contacted, composite anode is collectively formed in Ohm contact electrode and Schottky contact electrode.
Intrinsic GaN cap 106 on third barrier layer 105, further, 106 length l of intrinsic GaN cap7
Less than or equal to distance l between cathode 107 and composite anode6Half, refer to Fig. 2.
The passivation layer 111 being covered on third barrier layer 105, intrinsic GaN cap 106, composite anode and cathode 107.
Specifically, forming hetero-junctions between composite potential barrier layer and channel layer, there are 2DEG at heterojunction boundary；Due to
Al content in one barrier layer and the second barrier layer is higher, and the polarization intensity between channel layer is stronger, at hetero-junctions
2DEG concentration is also higher；Conversely, the Al content in third barrier layer is lower, the polarization intensity between channel layer is weaker, different
2DEG concentration at matter knot is relatively low；The 2DEG of low concentration facilitates the extending transversely of channel 2DEG depletion region, thus in cathode
Edge introduces a new electric field spike, keeps device surface field distribution more uniform, breakdown voltage is improved.
Specifically, the 2DEG at intrinsic GaN cap and channel forms RESURF effect, anode edge can be effectively reduced
High electric field peak and depletion region extending transversely, while a new electric field spike is introduced in intrinsic GaN cap right end, make device
Surface electric field distribution is more uniform, to improve the breakdown voltage of device.
Specifically, the length of intrinsic GaN cap 106 is less than or equal to the half of distance between cathode 107 and composite anode, energy
Guarantee big forward current density while improving device electric breakdown strength, meets the requirement of power device.
The embodiment of the present invention introduces composite potential barrier layer and intrinsic GaN cap simultaneously, under the collective effect of both, device
Depletion region it is extending transversely and completely depleted, a new electricity is introduced at intrinsic GaN cap right end and cathode edge respectively
Field spike, the surface electric field distribution of device is more uniform, so that breakdown voltage is improved.
Specifically, collectively forming composite anode using Ohmic contact and Schottky contacts；When device in its natural state, sun
2DEG in the Schottky contacts lower channels of pole is completely depleted, and diode is in an off state.When the bias of anode increases,
Electronics in anode Schottky contact lower channels reassembles, when anodic bias is greater than channel cut-in voltage, electronics
Anode ohmic metal can be flowed to from cathode ohmic metal, realize that the low-loss of diode is opened.
Field control 2DEG channel switches principle is introduced into GaN base SBD device by the composite anode in the embodiment of the present invention, instead of
Traditional GaN base SBD device using Schottky come the conduction mechanism of control switch so that device cut-in voltage is minimized.
In a specific embodiment, 101 material of substrate layer includes sapphire, one in Si, SiC, AlN, GaN, AlGaN
Kind is a variety of；Buffer layer 102,103 material of channel layer include one of GaN, AlN, AlGaN, InGaN, InAlN or more
Kind；The material of first barrier layer 1041, the second barrier layer 1042 and third barrier layer 105 can also include GaN, AlN, InGaN,
One of InAlN or a variety of；111 material of passivation layer includes SiNx、Al2O3、AlN、Y2O3、La2O3、Ta2O5、TiO2、HfO2、
ZrO2One of or it is a variety of；It is metal alloy compositions that cathode ohmic contact 107 and anode ohmic, which contact 108 materials, is commonly used
Metal alloy have Ti/Al/Ni/Au or Mo/Al/Mo/Au etc.；It is that workfunction range exists that anode Schottky, which contacts 110 materials,
The metal alloy compositions of 4.6eV-6eV, common metal alloy have Ni/Au or Ti/Au etc..
The GaN base SBD device with composite potential barrier layer of the embodiment of the present invention introduces composite potential barrier layer, intrinsic GaN simultaneously
Cap layers and composite anode, under the collective effect of these three structures, the breakdown voltage of GaN base SBD device is improved, and is opened simultaneously
It opens voltage to be reduced, alleviates the contradiction between breakdown voltage and cut-in voltage, so that the two while performance with higher
Index, the breakdown characteristics and reliability of device are also improved.
Embodiment two
Referring to Figure 1 and Fig. 2, in Fig. 2, substrate layer 101, buffer layer 102, channel layer 103, composite potential barrier layer and passivation
The lateral dimension l of layer 1111It is 19.5 μm, 1041 length l of the first barrier layer2It is 4.5 μm, 1042 length l of the second barrier layer4For
4.5 μm, the length l of third barrier layer 1053It is 10 μm, the size l of composite anode5Be 4.5 μm, composite anode and cathode 107 it
Between distance l6It is 14 μm, the length l of intrinsic GaN cap 1067It is 7 μm.
Fig. 5 is referred to, Fig. 5 is a kind of structural schematic diagram for traditional GaN base SBD device that the prior art provides, comprising: lining
Bottom 201, the channel layer 203 on buffer layer 202, is located on channel layer 203 buffer layer 202 on substrate layer 201
Barrier layer 204, the anode 206 positioned at 204 surface both ends of barrier layer and cathode 205, be covered on anode 206, cathode 205 and gesture
Passivation layer 207 in barrier layer 204.Wherein, substrate layer 201, buffer layer 202, channel layer 203, barrier layer 204 and passivation layer 207
Lateral dimension be 19.5 μm, 206 length of anode is 4.5 μm, and the spacing of cathode and anode is 14 μm.
Fig. 6 is referred to, to traditional GaN base SBD of the above-mentioned GaN base SBD device with composite potential barrier layer and the prior art
Device is emulated to obtain Fig. 6 using Silvaco software, and Fig. 6 is the GaN provided in an embodiment of the present invention with composite potential barrier layer
The transfer characteristic of base SBD device and traditional GaN base SBD device compares figure.As seen from Figure 6, traditional devices (traditional GaN base SBD device
Part) cut-in voltage be 0.93V, the cut-in voltage of new device (the GaN base SBD device of the embodiment of the present invention) is 0.57V.Phase
Than traditional devices, the cut-in voltage of new device reduces 39%.
Fig. 7 is referred to, to traditional GaN base SBD of the above-mentioned GaN base SBD device with composite potential barrier layer and the prior art
Device is emulated to obtain Fig. 7 using Silvaco software, and Fig. 7 is provided in an embodiment of the present invention with composite potential barrier layer GaN base
The reverse withstand voltage field distribution of SBD device and traditional GaN base SBD device compares figure, wherein abscissa x represents SBD device and each
The lateral dimension of a structure.As seen from Figure 7, there is an electric field spike in traditional devices (traditional GaN base SBD device), puncture
Voltage is 274V；In intrinsic GaN cap right end and cathode in new device (the GaN base SBD device of the embodiment of the present invention)
Edge introduces a new electric field spike respectively, so that three electric field spikes are produced, so that device surface field distribution is more
Add uniformly, breakdown voltage 2714V, breakdown voltage improves 891%.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (7)
1. a kind of GaN base Schottky barrier diode with composite potential barrier layer, including substrate layer (101) are located at the substrate
Buffer layer (102) on layer (101), the channel layer (103) being located on the buffer layer (102), which is characterized in that further include:
Composite potential barrier layer on the channel layer (103), wherein the composite potential barrier layer includes the first barrier layer
(1041), the second barrier layer (1042) and third barrier layer (105), the third barrier layer (105) are located at first potential barrier
Between layer (1041) and second barrier layer (1042)；
Cathode (107) on second barrier layer (1042)；
Composite anode on first barrier layer (1041)；
Intrinsic GaN cap (106) on the third barrier layer (105).
2. GaN base Schottky barrier diode as described in claim 1, which is characterized in that further include being covered on the third
Passivation layer (111) on barrier layer (105), the intrinsic GaN cap (106), the composite anode and the cathode (107).
3. GaN base Schottky barrier diode as described in claim 1, which is characterized in that first barrier layer (1041)
Material with the second barrier layer (1042) includes AlxGa1-xN, wherein x range is 0.2~0.3.
4. GaN base Schottky barrier diode as described in claim 1, which is characterized in that third barrier layer (105) material
Material includes AlxGa1-xN, wherein x range is 0.05~0.2.
5. GaN base Schottky barrier diode as described in claim 1, which is characterized in that the composite anode includes ohm
Contacting (108) and Schottky contacts (110), wherein the Ohmic contact (108) is located on first barrier layer (1041),
The Schottky contacts (110) are covered in the Ohmic contact (108) and first barrier layer (1041).
6. GaN base Schottky barrier diode as described in claim 1, which is characterized in that the third barrier layer (105)
Length is less than or equal to the distance between the cathode (107) and the composite anode.
7. GaN base Schottky barrier diode as described in claim 1, which is characterized in that the intrinsic GaN cap (106)
Length be less than or equal between the cathode (107) and the composite anode distance half.
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| CN (1) | CN109346529A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024000433A1 (en) * | 2022-06-30 | 2024-01-04 | 广东致能科技有限公司 | Diode and manufacturing method therefor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050087765A1 (en) * | 2003-05-16 | 2005-04-28 | Wataru Saito | Power semiconductor device used for power control |
| CN101771076A (en) * | 2010-01-04 | 2010-07-07 | 西安电子科技大学 | Full transparent AlGaN/GaN high electron mobility transistor and manufacturing method thereof |
| CN106653825A (en) * | 2015-10-28 | 2017-05-10 | 英飞凌科技奥地利有限公司 | Semiconductor device |
| CN106783963A (en) * | 2017-01-11 | 2017-05-31 | 西安电子科技大学 | A kind of AlGaN/GaN HFETs with the intrinsic GaN cap in part |
-
2018
- 2018-08-28 CN CN201810984729.5A patent/CN109346529A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050087765A1 (en) * | 2003-05-16 | 2005-04-28 | Wataru Saito | Power semiconductor device used for power control |
| CN101771076A (en) * | 2010-01-04 | 2010-07-07 | 西安电子科技大学 | Full transparent AlGaN/GaN high electron mobility transistor and manufacturing method thereof |
| CN106653825A (en) * | 2015-10-28 | 2017-05-10 | 英飞凌科技奥地利有限公司 | Semiconductor device |
| CN106783963A (en) * | 2017-01-11 | 2017-05-31 | 西安电子科技大学 | A kind of AlGaN/GaN HFETs with the intrinsic GaN cap in part |
Non-Patent Citations (1)
| Title |
|---|
| JAE-GIL LEE等: "Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode", 《IEEE ELECTRON DEVICE LETTERS 》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024000433A1 (en) * | 2022-06-30 | 2024-01-04 | 广东致能科技有限公司 | Diode and manufacturing method therefor |
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Application publication date: 20190215 |