CN111477678B - Transverse Schottky diode based on interdigital structure and preparation method thereof - Google Patents
Transverse Schottky diode based on interdigital structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a transverse Schottky diode based on an interdigital structure and a preparation method thereof, wherein the diode comprises the following components: the GaN-based LED chip comprises a substrate, an AlN nucleating layer, a GaN buffer layer, an AlN inserting layer, an AlGaN barrier layer, a SiN passivation layer and a dielectric layer, wherein the AlN nucleating layer, the GaN buffer layer, the AlN inserting layer, the AlGaN barrier layer, the SiN passivation layer and the dielectric layer are sequentially arranged on; the first groove penetrates through the dielectric layer, the SiN passivation layer and the AlGaN barrier layer; the first part of the second groove penetrates through the dielectric layer, the SiN passivation layer and part of the AlGaN barrier layer, and the second part of the second groove penetrates through the other part of the AlGaN barrier layer, the AlN insert layer and part of the GaN buffer layer; the cathode is deposited with a first ohmic metal; the anode comprises a plurality of second ohmic metals and a plurality of anode metals deposited in the first groove and the second groove, and the plurality of second ohmic metals and the plurality of anode metals in the second groove are alternately distributed to form an interdigital structure. The anode of the invention adopts an ohmic and Schottky interdigital structure, and because the Schottky contact and the ohmic contact of the anode are in the same column, more Schottky depletion regions are introduced during reverse bias, thereby improving the reverse breakdown voltage of the device.
Description
Technical Field
The invention belongs to the technical field of semiconductor materials and manufacturing processes thereof, and particularly relates to a transverse Schottky diode based on an interdigital structure and a preparation method thereof.
Background
Schottky Barrier Diode (SBD) has a very short reverse recovery time (which can be as short as several nanoseconds), belongs to a low-power consumption and ultra-high speed semiconductor device, has the advantages of high switching speed and forward voltage reduction, and is widely used as a high-frequency, low-voltage and large-current rectifier Diode, and is often used as a rectifier Diode and a small-signal detection Diode in circuits such as microwave communication and the like.
The third-generation semiconductors GaN, AlN, InN and the alloy thereof have the advantages of direct band gap, wide forbidden bandwidth, large continuous modulation range, high breakdown field strength, high saturated electron drift speed, high thermal conductivity, good radiation resistance and the like. The AlGaN/GaN heterojunction structure generates high-density two-dimensional electron gas (2DEG) at the junction, so that the GaN-based transverse device has higher saturated output current and faster switching speed, and can adapt to severe working environments such as high voltage, high temperature and irradiation. The electronic device taking the nitride as the matrix quickly fills the problem that the first and second-generation semiconductor materials cannot meet the requirements of the field with higher frequency and higher power, greatly improves the performance of the device, can exert the advantages of nitride materials to the maximum extent, and has very wide application prospects particularly in the fields of active phased array radar, 5G communication, smart power grids and civil and military use. The AlGaN/GaN-based transverse Schottky diode can greatly improve the reverse breakdown voltage of the Schottky diode by virtue of unique material and structural advantages, and can meet the requirement of high reverse breakdown voltage of the diode in certain high-power switching power supplies. However, in the switching power supply system, the diode as an energy consumption element accounts for about 30% of the total power consumption, the on-state loss accounts for the largest proportion of all the power consumption losses of the diode, and the reduction of the forward voltage drop is the main way of reducing the on-state loss. The bandgap of GaN materials is large and the turn-on voltage of the devices tends to be high. Therefore, how to reduce the turn-on voltage of the GaN-based schottky diode becomes a hot point of research. The next generation of high efficiency power system also needs a diode with low turn-on voltage, high breakdown voltage and higher switching speed to realize high efficiency energy switching.
Currently, most of the international power AlGaN/GaN-based lateral Schottky diodes are manufactured in a manner that a deep groove structure, a combination of a groove and GET or a mixed mode of ohm and Schottky is adopted for an anode. In order to reduce the turn-on voltage of the AlGaN/GaN schottky diode, a groove etching method is adopted in an anode region to increase defects at an interface to improve the tunneling probability of electrons. The 2DEG can be directly contacted with the anode metal by etching the groove, the barrier height is reduced, and the starting voltage of the device is reduced; the anode is etched by adopting a deep groove, and low-work-function anode metal is deposited to reduce the starting voltage of the device and improve reverse breakdown; or a high-work-function metal (Pt) and AlGaN thin barrier structure is adopted, Pt metal just depletes a channel 2DEG, low turn-on voltage of the device is realized, good Schottky contact quality is guaranteed, Schottky leakage is effectively reduced, and breakdown voltage of the device is improved; by adopting an ohmic and Schottky mixed structure, the turn-on voltage of the device is not influenced by a Schottky barrier and depends on the threshold voltage of a channel, so that the turn-on voltage is reduced. In order to increase the reverse breakdown voltage, it is currently the mainstream practice to introduce a field plate structure, where the anode metal can be extended to the cathode for a fixed length, and a metal-insulating layer-semiconductor structure is formed at the periphery of the electrode. The structure reduces the peak electric field intensity by changing the electric field distribution in the depletion layer below the Schottky electrode, so as to improve the breakdown voltage of the device.
However, these methods have the following disadvantages:
firstly, if the device adopts a groove etching method, the starting voltage of the device is reduced to some extent, but the reduction amplitude is not obvious, and a strong electric field peak exists at the Schottky contact edge close to the cathode direction, so that the breakdown is easy to occur at the Schottky contact edge;
secondly, if the device adopts a field plate structure, the parasitic capacitance of the device is increased, and the high frequency and the switching characteristic of the device are influenced.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a lateral schottky diode based on an interdigital structure and a method for manufacturing the same.
The invention provides a transverse Schottky diode based on an interdigital structure, which comprises:
the GaN-based LED chip comprises a substrate, an AlN nucleating layer, a GaN buffer layer, an AlN inserting layer, an AlGaN barrier layer, an SiN passivation layer and a dielectric layer, wherein the AlN nucleating layer, the GaN buffer layer, the AlN inserting layer, the AlGaN barrier layer, the SiN passivation layer and the dielectric layer are sequentially arranged on the substrate;
the first groove penetrates through the dielectric layer, the SiN passivation layer and the AlGaN barrier layer and is positioned on the upper surface of the AlN insert layer, and the dielectric layer covers the inner wall and the bottom of the first groove;
the second groove comprises a first part and a second part from top to bottom, the first part penetrates through the dielectric layer, the SiN passivation layer and part of the AlGaN barrier layer, the dielectric layer covers the inner wall and the bottom of the first part, the second part is located in the middle of the bottom of the first part, penetrates through the other part of the AlGaN barrier layer and the AlN insert layer and is located in part of the GaN buffer layer;
the cathode is deposited with first ohmic metal, the first ohmic metal penetrates through the dielectric layer and the SiN passivation layer and is positioned on the upper surface of the AlGaN barrier layer, and the SiN passivation layer and the dielectric layer are partially covered on the first ohmic metal;
the anode comprises a plurality of deposited second ohmic metals, the second ohmic metals penetrate through the dielectric layer and the SiN passivation layer and are located on the upper surface of the AlGaN barrier layer, and the anode further comprises a plurality of anode metals deposited in the first groove and the second groove, and the plurality of second ohmic metals and the plurality of anode metals in the second groove are alternately distributed to form an interdigital structure so as to form the transverse Schottky diode based on the interdigital structure.
In one embodiment of the present invention, the first groove has a depth of 25 to 220nm and a length of 1 to 4 μm.
In one embodiment of the present invention, the depth of the first portion in the second groove is 10 to 170nm, and the length is 50 to 70 μm.
In one embodiment of the present invention, the second portion of the second groove has a depth of 11 to 30nm and a length of 48 to 58 μm.
In one embodiment of the invention, the second part in the second groove is located in the middle of the bottom of the first part in the second groove, and the distance between the second part in the second groove and the two ends of the first part in the second groove is 1-6 μm.
In one embodiment of the invention, the distance between the first part in the second groove and the first groove is 2-4 μm.
In one embodiment of the invention, the length of the cathode is the same as that of the first part in the second groove, and the distance between the second part in the second groove and the cathode is 6-34 μm.
In one embodiment of the invention, the width of the second ohmic metals and the width of the anode metal are both 5-15 μm.
In one embodiment of the invention, the width of the anode is 90-135 μm.
In another embodiment of the present invention, a method for manufacturing a lateral schottky diode based on an interdigital structure is provided, which is suitable for any one of the lateral schottky diodes based on an interdigital structure described above, and includes:
growing an AlN nucleating layer, a GaN buffer layer, an AlN inserting layer and an AlGaN barrier layer on a substrate in sequence by using MOCVD equipment;
coating photoresist on the upper surface of the AlGaN barrier layer, photoetching an ohmic pattern area of an anode and an ohmic pattern area of a cathode, evaporating first ohmic metal in the ohmic pattern area of the cathode by using an electron beam evaporation process, and evaporating a plurality of second ohmic metals in the ohmic pattern area of the anode;
coating photoresist on the surface of the device, photoetching an active area, and isolating the active area of the device by utilizing ICP equipment or ion implantation equipment;
depositing a SiN passivation layer on the surface of the device by using PECVD equipment;
coating photoresist on the surface of a device, photoetching an ohmic pattern region of the anode and an ohmic pattern region of the cathode, and performing dry etching on the ohmic pattern regions of the anode and the cathode by using ICP (inductively coupled plasma) equipment to remove the SiN passivation layer;
coating photoresist on the surface of the device and photoetching a first groove pattern region of the anode, carrying out dry etching on the first groove pattern region of the anode by utilizing ICP equipment, and sequentially removing the SiN passivation layer and the AlGaN barrier layer until reaching the upper surface of the AlN insert layer;
coating photoresist on the surface of the device and photoetching a first part of pattern region in a second groove pattern region of the anode, and performing dry etching on the first part of pattern region in the second groove pattern region of the anode by using ICP (inductively coupled plasma) equipment to sequentially remove the SiN passivation layer and part of the AlGaN barrier layer;
depositing a dielectric layer on the surface of the device by using ALD equipment;
coating photoresist on the surface of a device and photoetching a second part of pattern region in the ohmic pattern region of the anode and the second groove pattern region and the ohmic pattern region of the cathode, carrying out dry etching on the second part of pattern region in the ohmic pattern region of the anode and the second groove pattern region and the ohmic pattern region of the cathode by utilizing ICP (inductively coupled plasma) equipment, removing the dielectric layer in the ohmic pattern region of the anode and the ohmic pattern region of the cathode, and sequentially removing the AlGaN barrier layer, the AlN insert layer and part of the GaN buffer layer in the second part of pattern region of the anode;
coating photoresist on the surface of a device and photoetching an ohmic pattern area, a first groove pattern area and a second groove pattern area of the anode, respectively evaporating a plurality of anode metals above the ohmic pattern area, the first groove pattern area and the second groove pattern area of the anode by using an electron beam evaporation process so as to enable the anode metals to be deposited on a plurality of second ohmic metals of the anode, and in the first groove and the second groove, the plurality of second ohmic metals and the plurality of anode metals in the second groove are alternately distributed to form an interdigital structure, and finally removing the photoresist to finish the manufacture of the transverse Schottky diode based on the interdigital structure.
Compared with the prior art, the invention has the beneficial effects that:
according to the diode device provided by the invention, the anode adopts an ohmic and Schottky cross arrangement mode in the width direction of the device (as shown in figure 1 d), and as Schottky contact exists on the anode and the anode ohmic contact is in the same column, compared with a traditional ohmic and Schottky mixed structure, more Schottky depletion regions are introduced into the anode region of the device during reverse bias, electrons are prevented from reaching the cathode region from the lower part of the anode ohmic contact through the GaN buffer layer, reverse leakage current is effectively reduced on the premise of not increasing the starting voltage of the device, the breakdown voltage of the device is improved, and the breakdown voltage can reach 1500V when Lac is 10 mu m.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1a to 1d are schematic structural diagrams of a lateral schottky diode based on an interdigital structure, which are respectively in a section B1-B2, a1-a2, a section C1-C2 and a top view plane, according to an embodiment of the present invention;
fig. 2a to 2d are schematic structural diagrams of another lateral schottky diode based on an interdigital structure, which are respectively shown in a section B1-B2, a1-a2, a section C1-C2 and a top view plane;
fig. 3a to 3d are schematic structural diagrams of a lateral schottky diode based on an interdigital structure, taken from a B1-B2 section, a1-a2 section, C1-C2 section and a top view plane, respectively, according to an embodiment of the present invention;
FIGS. 4a to 4i are schematic diagrams illustrating a process for preparing a cross section of a lateral Schottky diode A1-A2 based on an interdigital structure, according to an embodiment of the present invention;
fig. 5a to 5j are schematic diagrams illustrating a preparation process of a cross section of another lateral schottky diode B1-B2 based on an interdigital structure according to an embodiment of the present invention.
Description of reference numerals:
1-a substrate; 2-AlN nucleating layer; 3-GaN buffer layer; a 4-AlN insertion layer; a 5-AlGaN barrier layer; a 6-SiN passivation layer; 7-a dielectric layer; 8-a first ohmic metal; 9-a cathode; 10-a second ohmic metal; 11-anodic metal; 12-anode.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1a to 1d, fig. 1a to 1d are schematic structural diagrams of a lateral schottky diode based on an interdigital structure, respectively in a section B1-B2, a1-a2, a section C1-C2, and a top view plane, specifically, where 1d is a top view of the device, and is vertically cut down along a direction B1-B2, a1-a2, and a direction C1-C2, so as to respectively obtain a schematic structural diagram of a section B1-B2 shown in fig. 1a, a section a1-a2 shown in fig. 1B, and a section C1-C2 shown in fig. 1C. The embodiment of the invention provides a transverse Schottky diode based on an interdigital structure, which comprises:
the GaN-based light-emitting diode comprises a substrate 1, an AlN nucleating layer 2, a GaN buffer layer 3, an AlN inserting layer 4, an AlGaN barrier layer 5, an SiN passivation layer 6 and a dielectric layer 7 which are sequentially arranged on the substrate 1;
the first groove penetrates through the dielectric layer 7, the SiN passivation layer 6 and the AlGaN barrier layer 5 and is positioned on the upper surface of the AlN insert layer 4, and the dielectric layer 7 covers the inner wall and the bottom of the first groove;
the second groove comprises a first part and a second part from top to bottom, the first part penetrates through the dielectric layer 7, the SiN passivation layer 6 and part of the AlGaN barrier layer 5, the dielectric layer 7 covers the inner wall and the bottom part of the first part, and the second part is positioned in the middle of the bottom of the first part, penetrates through the other part of the AlGaN barrier layer 5 and the AlN insert layer 4 and is positioned in part of the GaN buffer layer 3;
the cathode 9 is deposited with first ohmic metal 8, the first ohmic metal 8 penetrates through the dielectric layer 7 and the SiN passivation layer 6 and is positioned on the upper surface of the AlGaN barrier layer 5, and the SiN passivation layer 6 and the dielectric layer 7 are partially covered on the first ohmic metal 8;
the anode 12 comprises a plurality of deposited second ohmic metals 10, the second ohmic metals 10 penetrate through the dielectric layer 7 and the SiN passivation layer 6 and are located on the upper surface of the AlGaN barrier layer 5, and further comprises a plurality of anode metals 11 deposited in the first groove and the second groove, and the plurality of second ohmic metals 10 and the plurality of anode metals 11 in the second groove are alternately distributed to form an interdigital structure so as to form the transverse Schottky diode based on the interdigital structure.
Specifically, the present embodiment provides a lateral schottky diode based on an interdigital structure, which includes, from bottom to top, a substrate 1 (including Si, SiC, sapphire), an AlN nucleation layer 2, a GaN buffer layer 3, an AlN insertion layer 4, an AlGaN barrier layer 5, an SiN passivation layer 6, and a dielectric layer 7 (including a 1), based on the problems of the above-mentioned prior lateral schottky diode2O3、SiN、SiO2)。
Preferably, the AlN nucleating layer 2 has a thickness of 10 to 120nm, the GaN buffer layer 3 has a thickness of 1 to 4 μm, the AlN inserting layer 4 has a thickness of 1 to 2nm, the AlGaN barrier layer 5 has a thickness of 10 to 40nm and an Al component of 20 to 50%, the SiN passivation layer 6 has a thickness of 10 to 150nm, and the dielectric layer 7 has a thickness of 5 to 30 nm.
More preferably, the AlN nucleation layer 2 has a thickness of 20nm, the GaN buffer layer has a thickness of 2 μm, the AlN insertion layer 4 has a thickness of 1nm, the AlGaN barrier layer 5 has a thickness of 20nm and an Al component of 25%, the SiN passivation layer 6 has a thickness of 60nm, and the dielectric layer 7 has a thickness of 15 nm.
And a cathode 9 on which a first ohmic metal 8 is deposited, wherein the first ohmic metal 8 penetrates through the dielectric layer 7 and the SiN passivation layer 6 and is located on the upper surface of the AlGaN barrier layer 5, the dielectric layer 7 and the SiN passivation layer 6 cover two end portions of the first ohmic metal 8, and an ohmic electrode is formed on the cathode 9. The length of the cathode 9 is g, as shown in fig. 1 a.
Preferably, the first ohmic metal 8 is Ti/Al/Ni/Au (Ti is at the bottom layer).
Preferably, the length g of the cathode 9 is 50 to 70 μm.
Further preferably, the length g of the cathode 9 is 60 μm.
An anode 12 comprising a plurality of second ohmic metals 10, the second ohmic metals 10 penetrating the dielectric layer 7, the SiN passivation layer 6 and being disposed on the upper surface of the AlGaN barrier layer 5, and a plurality of anode metals 11 deposited in the first groove and the second groove, wherein,
the first groove penetrates through the dielectric layer 7, the SiN passivation layer 6 and the AlGaN barrier layer 5 and is located on the upper surface of the AlN insert layer 4, the dielectric layer 7 covers the inner wall and the bottom of the first groove, a plurality of anode metals 11 are deposited on the dielectric layer 7, an MIS structure is formed at the first groove, the depth of the first groove is used for modulating the concentration of 2DEG in a channel, and the MIS structure can reduce the starting voltage of a device. As shown in fig. 1a, the depth of the first groove is the sum of the thicknesses of the dielectric layer 7, the SiN passivation layer 6 and the AlGaN barrier layer 5, and the length of the first groove is f.
Preferably, the anode metal 11 is made of Ni/Au/Ni (Ni is at the bottom layer).
Preferably, the depth of the first groove is 25 to 220nm, and the length f is 1 to 4 μm.
Further preferably, the first grooves have a depth of 95nm and a length f of 2 μm.
The second groove comprises a first part and a second part from top to bottom, the first part penetrates through the dielectric layer 7, the SiN passivation layer 6 and part of the AlGaN barrier layer 5, the dielectric layer 7 covers the inner wall and the bottom of the first part, the second part is arranged in the area near the center of the first part, the second part penetrates through the other part of the AlGaN barrier layer 5 and the AlN insert layer 4 and is located in part of the GaN buffer layer 3, the specific depth exceeds the position of the 2DEG, a plurality of anode metals 11 are deposited in the second groove, and a plurality of second ohmic metals 10 and a plurality of anode metals 11 in the second groove are alternately arranged in sequence to form an interdigital structure. As shown in fig. 1a, the depth of the first portion in the second groove is a, the length is h, the depth of the second portion in the second groove is b, the length is d, the second portion in the second groove is located in the middle of the first portion in the second groove, the distance between the second portion in the second groove and the two ends of the first portion in the second groove is c, the distance between the first portion in the second groove and the first groove is e, the distance between the second portion in the second groove and the cathode 9 is i, the length of the cathode (9) is g, and the length of the cathode (9) is the same as the length h of the first portion in the second groove. As shown in fig. 1d, each second ohmic metal 10 has a width k, each anode metal 11 has a width l, and the entire anode 12 has a width j.
Preferably, each second ohmic metal 10 is Ti/Al/Ni/Au (Ti is at the bottom layer), and each anode metal 11 is Ni/Au/Ni (Ni is at the bottom layer).
Preferably, the depth a of the first portion in the second groove is 10 to 170nm, and the length h is 50 to 70 μm.
Preferably, the second portion in the second groove has a depth b of 11 to 30nm and a length d of 48 to 58 μm.
Preferably, the second part in the second groove is positioned in the middle of the bottom of the first part in the second groove, and the distance c between the second part in the second groove and the two ends of the first part in the second groove is 1-6 μm.
Preferably, the distance e between the first part in the second groove and the first groove is 2-4 μm.
Preferably, the length h of the first portion in the second groove is the same as the length g of the cathode 9, and the distance i between the second portion in the second groove and the cathode 9 is 6-34 μm.
Preferably, the width k of each second ohmic metal 11 and the width l of each anode metal 11 are both 5 to 15 μm.
Preferably, the width j of the anode 12 is 90 to 135 μm.
Further preferably, the depth a of the first portion in the second groove is 80nm, the length h is 60 μm, the depth b of the second portion in the second groove is 11nm, the length d is 54 μm, the second portion in the second groove is located at the middle position of the bottom of the first portion in the second groove, the distance c from both ends of the first portion in the second groove is 3 μm, the distance e between the first portion in the second groove and the first groove is 3 μm, the length g of the cathode 9 is 60 μm, the distance i between the second portion in the second groove and the cathode 9 is 24 μm, the width k of each second ohmic metal 11, the width l of each anode metal 11 are 10 μm, and the width j of the anode 12 is 90 μm.
Fig. 1a of the present embodiment is a cross-sectional view in the direction B1-B2, and it can be seen that, in the present embodiment, the anode 12 adopts a schottky trench structure plus an MIS structure, the depth of the second trench is etched into a part of the GaN buffer layer 3, the specific position is below 2DEG, and the anode metal 11 (schottky metal) is deposited in the second trench, so that the schottky metal is in direct contact with the 2DEG, and the on-resistance of the device is effectively reduced.
Fig. 1b is a sectional view along a direction a1-a2, and it can be seen that the anode 12 of this embodiment also adopts an ohmic-plus-MIS structure, specifically, a dielectric layer 7 is grown in the first recess, and a plurality of anode metals 11 are deposited on the dielectric layer 7 to form a MIS structure, which controls the on and off of the channel, so that the device has a small on voltage.
Fig. 1C and 1d of the present embodiment are a cross-sectional view in the direction of C1-C2 and a top view of the device, respectively, and it can be seen that the anode 12 of the present embodiment adopts a similar interdigital structure with sequentially alternating ohmic and schottky electrodes, specifically, a plurality of second ohmic metals 10 and a plurality of anode metals 11 are alternately arranged to form an interdigital structure with ohmic and schottky electrodes, and there is no space between the plurality of second ohmic metals 10 and the plurality of anode metals 11. The smaller the width of the fingers in the interdigital structure is, that is, the smaller the schottky width of the anode 12 is, the more the current flows into the ohmic region of the anode 12, which is beneficial to reducing the on-resistance of the device, and the more schottky depletion regions are introduced by increasing the number of the fingers (the number of the anode metal 11), the on-resistance is increased, the high reverse breakdown voltage of the device is improved by optimizing the width and the number of the fingers, and the number of the fingers is preferably 5.
In the diode device provided by the embodiment, the anode 12 adopts an interdigital structure of ohm and schottky, and because the anode 12 has schottky contact and is in the same column with the anode ohmic contact, more schottky depletion regions are introduced during reverse bias, thereby preventing electrons from reaching the cathode 9 region through the GaN buffer layer 3 from the lower part of the anode ohmic contact, effectively reducing reverse leakage current on the premise of not increasing the starting voltage of the device, improving the breakdown voltage of the device, and the breakdown voltage can reach 1500V when Lac is 10 μm; in the embodiment, the anode 12 also adopts a deep groove Schottky and partial MIS structure, and the MIS structure above the second groove, so that when strong reverse bias is carried out, the edge of the MIS structure above the Schottky close to the cathode 9 direction can effectively shield a high electric field under the strong reverse bias, the field intensity of a Schottky contact region is reduced, and reverse leakage current is effectively inhibited; in this embodiment, a groove etching technique is adopted, the metal is directly contacted with the 2DEG on the sidewall to reduce the effective schottky barrier height, and when the distance between the cathode and the anode is 10 μm, the on-state resistance ron.sp of the device is reduced to 0.8m Ω · cm2。
It should be noted that the length, depth and width of the present embodiment are defined from different angles, specifically, the length and depth are relative to the cross section B1-B2 in fig. 1a, and the width is relative to the top view of the device in fig. 1 d; in the present embodiment, the structure of the lateral schottky diode based on the interdigital structure, which is formed by alternately distributing the second ohmic metals and the anode metals in the anode region in the interdigital structure, is not limited to the above-mentioned one, and can also be deformed on the structure, for example, fig. 2a to 2d are schematic structural diagrams of another lateral schottky diode based on the interdigital structure, which are provided by the embodiment of the present invention, respectively in the cross section B1 to B2, the cross section a1 to a2, the cross section C1 to C2, and the top view plane, fig. 3a to 3d are schematic structural diagrams of another lateral schottky diode based on the interdigital structure, which are provided by the embodiment of the present invention, respectively in the cross section B1 to B2, the cross section a1 to a2, the cross section C1 to C2, and the top view plane, and it can be seen that the cross sections B1 to B2, a1 to a2, and the cross sections C1 to C2 are slightly different, but the cross section C2 to C539, The structures of the top view surfaces are the same or similar, and a plurality of second ohmic metals and a plurality of anode metals which finally form the anode area are alternately distributed to form the transverse Schottky diode with the interdigital structure.
Example two
On the basis of the first embodiment, fig. 4a to 4i are schematic diagrams illustrating a process flow for preparing a cross section of a lateral schottky diode a1-a2 based on an interdigital structure provided in the embodiment of the present invention, and fig. 5a to 5j are schematic diagrams illustrating a process flow for preparing a cross section of another lateral schottky diode B1-B2 based on an interdigital structure provided in the embodiment of the present invention. The embodiment provides a method for preparing a lateral schottky diode based on an interdigital structure, which is suitable for the first embodiment, and the method for preparing the lateral schottky diode based on the interdigital structure specifically comprises the following steps:
Specifically, in the diode prepared in the present embodiment through steps 1 to 10, the anode is composed of two parts: firstly, adopt schottky and add recess MIS structure, secondly adopt ohm and add recess MIS structure, these two kinds of structures are alternately arranged and are similar to the interdigital structure on the device width direction. The recessed MIS structure has a gating effect: when the device is forward biased, the plurality of ohmic metals 10 (ohmic contacts) of the channel starting anode 12 can collect electrons, so that low starting voltage of the device is realized, meanwhile, the quantity of the ohmic metals 10 of the anode 12 also obviously influences the on-resistance and reverse saturation leakage current of the device, the contradiction between low dynamic on-resistance and high reverse breakdown voltage can be relieved by finding an optimal value, and the quantity of the ohmic metals 10 is the same as that of the anode metals 11, preferably 5; during reverse bias, because the anode 12 has a plurality of anode metals 11 (Schottky contacts), more Schottky depletion regions are introduced, the channel of ohmic contact of current from the cathode 9 to the anode 9 through the GaN buffer layer 3 can be effectively blocked, and with the increase of the reverse bias, a region close to the cathode 9 is subjected to a stronger electric field peak value, however, in the groove MIS structure, due to the existence of the dielectric layer 7, the corresponding contact barrier is higher, so that the reverse leakage of the device can be effectively reduced, and the breakdown voltage of the device is improved.
It should be noted that the same or similar process as that shown in fig. 1a to 1d is implemented for the processes shown in fig. 2a to 2d and fig. 3a to 3d, wherein, in the groove etching portion, the specific step 7 etches the groove structure required in fig. 2a and 3a, and a plurality of anode metals 11 are deposited in such a groove, and meanwhile, the above steps 8 and 9 of depositing and removing the dielectric layer 7 are not required in fig. 2a to 2 d.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A lateral schottky diode based on an interdigitated structure, comprising:
the GaN-based light-emitting diode comprises a substrate (1), an AlN nucleating layer (2), a GaN buffer layer (3), an AlN inserting layer (4), an AlGaN barrier layer (5), an SiN passivation layer (6) and a dielectric layer (7), wherein the AlN nucleating layer, the GaN buffer layer, the AlN inserting layer, the AlGaN barrier layer and the dielectric layer are sequentially arranged on the substrate (1);
the first groove penetrates through the dielectric layer (7), the SiN passivation layer (6) and the AlGaN barrier layer (5) and is located on the upper surface of the AlN insert layer (4), and the dielectric layer (7) covers the inner wall and the bottom of the first groove;
the second groove comprises a first part and a second part from top to bottom, the first part penetrates through the dielectric layer (7), the SiN passivation layer (6) and part of the AlGaN barrier layer (5), the inner wall and the bottom of the first part are partially covered with the dielectric layer (7), the second part is located in the middle of the bottom of the first part, penetrates through the other part of the AlGaN barrier layer (5) and the AlN insert layer (4) and is located in part of the GaN buffer layer (3);
the cathode (9) is deposited with first ohmic metal (8), the first ohmic metal (8) penetrates through the dielectric layer (7) and the SiN passivation layer (6) and is located on the upper surface of the AlGaN barrier layer (5), and the SiN passivation layer (6) and the dielectric layer (7) are covered on the upper portion of the first ohmic metal (8);
the anode (12) comprises a plurality of deposited second ohmic metals (10), the second ohmic metals (10) penetrate through the dielectric layer (7) and the SiN passivation layer (6) and are located on the upper surface of the AlGaN barrier layer (5), the anode further comprises a plurality of anode metals (11) deposited in the first groove and the second groove, and the plurality of second ohmic metals (10) and the plurality of anode metals (11) in the second groove are alternately distributed to form an interdigital structure so as to form the transverse Schottky diode based on the interdigital structure.
2. The interdigital structure-based lateral schottky diode of claim 1, wherein the first recess has a depth of 25 to 220nm and a length (f) of 1 to 4 μm.
3. The interdigital structure-based lateral schottky diode of claim 1, wherein the first portion of the second trench has a depth (a) of 10 to 170nm and a length (h) of 50 to 70 μm.
4. The interdigital structure-based lateral schottky diode of claim 1, wherein the second portion of the second trench has a depth (b) of 11 to 30nm and a length (d) of 48 to 58 μm.
5. The interdigital structure-based lateral schottky diode of claim 1, wherein the second portion of the second recess is located at the middle position of the bottom of the first portion of the second recess, and the distance (c) from both ends of the first portion of the second recess is 1-6 μm.
6. The interdigital structure-based lateral schottky diode of claim 1, wherein the distance (e) between the first portion of the second recess and the first recess is 2-4 μm.
7. The interdigital structure-based lateral schottky diode of claim 1, wherein the length (g) of the cathode (9) is the same as the length (h) of the first portion in the second recess, and the distance (i) between the second portion in the second recess and the cathode (9) is 6-34 μm.
8. The interdigital structure-based lateral schottky diode of claim 1, wherein the width (k) of the second ohmic metals (10) and the width (l) of the anode metal (11) are both 5-15 μm.
9. The lateral schottky diode based on an interdigitated structure according to claim 1, characterized in that the width (j) of the anode (12) is comprised between 90 and 135 μm.
10. A preparation method of the lateral Schottky diode based on the interdigital structure is characterized in that the preparation method is suitable for the lateral Schottky diode based on the interdigital structure as claimed in any one of claims 1 to 9, and comprises the following steps:
growing an AlN nucleating layer (2), a GaN buffer layer (3), an AlN inserting layer (4) and an AlGaN barrier layer (5) on a substrate (1) in sequence by using MOCVD equipment;
coating photoresist on the upper surface of the AlGaN barrier layer (5) and photoetching an ohmic pattern area of an anode (12) and an ohmic pattern area of a cathode (9), evaporating first ohmic metal (8) in the ohmic pattern area of the cathode (9) by using an electron beam evaporation process, and evaporating a plurality of second ohmic metals (10) in the ohmic pattern area of the anode (12);
coating photoresist on the surface of the device, photoetching an active area, and isolating the active area of the device by utilizing ICP equipment or ion implantation equipment;
depositing a SiN passivation layer (6) on the surface of the device by using PECVD equipment;
coating photoresist on the surface of the device, photoetching an ohmic pattern region of the anode (12) and an ohmic pattern region of the cathode (9), and performing dry etching on the ohmic pattern region of the anode (12) and the ohmic pattern region of the cathode (9) by utilizing ICP (inductively coupled plasma) equipment to remove the SiN passivation layer (6);
coating photoresist on the surface of the device and photoetching a first groove pattern region of the anode (12), carrying out dry etching on the first groove pattern region of the anode (12) by utilizing ICP equipment, and sequentially removing the SiN passivation layer (6) and the AlGaN barrier layer (5) until the upper surface of the AlN insert layer (4);
coating photoresist on the surface of the device and photoetching a first part of pattern region in a second groove pattern region of the anode (12), carrying out dry etching on the first part of pattern region in the second groove pattern region of the anode (12) by utilizing ICP equipment, and sequentially removing the SiN passivation layer (6) and a part of the AlGaN barrier layer (5);
depositing a dielectric layer (7) on the surface of the device by using an ALD device;
coating photoresist on the surface of the device, photoetching a second part of pattern region in an ohmic pattern region and a second groove pattern region of the anode (12) and an ohmic pattern region of the cathode (9), carrying out dry etching on the second part of pattern region in the ohmic pattern region and the second groove pattern region of the anode (12) and the ohmic pattern region of the cathode (9) by utilizing ICP equipment, removing the dielectric layer (7) in the ohmic pattern region of the anode (12) and the ohmic pattern region of the cathode (9), and sequentially removing the AlGaN barrier layer (5), the AlN insert layer (4) and part of the GaN buffer layer (3) in the second groove of the anode (12) in the second part of pattern region;
coating photoresist on the surface of a device, photoetching an ohmic pattern area, a first groove pattern area and a second groove pattern area of an anode (12), respectively evaporating a plurality of anode metals (11) above the ohmic pattern area, the first groove pattern area and the second groove pattern area of the anode (12) by using an electron beam evaporation process, depositing the anode metals on a plurality of second ohmic metals (10) of the anode (12) and in the first groove and the second groove, wherein the plurality of second ohmic metals (10) and the plurality of anode metals (12) in the second groove are alternately distributed to form an interdigital structure, and finally removing the photoresist to finish the manufacture of the transverse Schottky diode based on the interdigital structure.
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