CN116230750A - Vertical step field plate high-voltage GaN-based diode and manufacturing method thereof - Google Patents
Vertical step field plate high-voltage GaN-based diode and manufacturing method thereof Download PDFInfo
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- 229910001092 metal group alloy Inorganic materials 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 11
- 230000005684 electric field Effects 0.000 abstract description 11
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- 239000002184 metal Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 7
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28581—Deposition of Schottky electrodes
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- H01L29/66204—Diodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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Abstract
The invention discloses a vertical step field plate high-voltage GaN-based diode and a manufacturing method thereof, wherein the vertical step field plate high-voltage GaN-based diode comprises a substrate layer, an epitaxial layer, a dielectric layer, an anode and a cathode; the manufacturing method of the vertical step field plate high-voltage GaN-based diode is as follows: selecting an N-type self-supporting GaN substrate; paving an N-type GaN epitaxial layer above the substrate layer; etching the N-type GaN epitaxial layer region by adopting an ICP etching technology; depositing a dielectric layer on the etching area and the edge of the N-type GaN epitaxial layer by adopting a PECVD (plasma enhanced chemical vapor deposition) process; manufacturing a cathode on the bottom surface of the N-type GaN substrate; manufacturing an anode on the dielectric layer region and the N-type GaN epitaxial layer; manufacturing interconnection leads; according to the invention, through the design of the anode step field plate, the device disperses and optimizes the electric field distribution in the vertical conductive direction, so that the breakdown voltage can be greatly improved; the extent of the breakdown voltage increases with the number of field plate steps.
Description
Technical Field
The invention relates to the technical and technological field of microelectronic devices, in particular to a vertical step field plate high-voltage GaN-based diode and a manufacturing method thereof.
Background
Compared with the first generation semiconductor material Si and the second generation semiconductor material GaAs, the third generation wide bandgap semiconductor represented by SiC and GaN has the advantages of high breakdown electric field strength and higher electron saturation speed; therefore, in theory, the GaN power device can obtain lower on-resistance and higher breakdown voltage, so that the power density and the power consumption utilization rate are obviously improved; in addition, compared with the traditional semiconductor material, the GaN material has the forbidden band of more than 3.44eV and low intrinsic carrier concentration, so that the GaN device can work at the high temperature of more than 200 ℃ and in an irradiation environment, and has higher reliability and stability.
The existing GaN-based power diode mainly comprises a transverse device type and a longitudinal device type; the transverse device forms a heterojunction structure through an epitaxial barrier layer on a channel layer, and generates two-dimensional electron gas, namely 2DEG, at a heterojunction interface to serve as a conducting channel by virtue of the polarization effect of a GaN-based material system; because of the relatively high areal density and mobility of the 2DEG in the channel, the lateral device can achieve extremely low on-resistance. In particular, in the multi-channel lateral GaN schottky barrier diode widely studied in recent years, a plurality of 2DEG conductive paths connected in parallel are formed between the cathode and the anode by stacking a plurality of heterojunctions, so that the on-resistance of the device is greatly reduced, and the high-voltage-resistance high-power device is facilitated to be realized. However, the current collapse problem in the lateral device is serious; the longitudinal device is a heteroepitaxial quasi-vertical device based on a sapphire or Si substrate because the GaN self-supporting substrate is high in price and high in cost; for a quasi-vertical device, because the electrodes of the device are on the same side, a current collecting effect can occur during forward conduction, so that heat distribution is uneven, and the current driving capability of the device is affected.
Therefore, a vertical step field plate high-voltage GaN-based diode and a manufacturing method thereof become a problem to be solved urgently.
Disclosure of Invention
The technical problem to be solved by the invention is that the current collapse problem of the transverse GaN-based power diode is serious; the vertical type GaN-based power diode is a heteroepitaxial quasi-vertical device based on a sapphire or Si substrate; for a quasi-vertical device, because the electrodes of the device are on the same side, a current collecting effect can occur during forward conduction, so that heat distribution is uneven, and the current driving capability of the device is affected.
In order to solve the technical problems, the technical scheme provided by the invention is as follows: the vertical step field plate high voltage GaN-based diode comprises a substrate layer, an epitaxial layer, a dielectric layer, an anode and a cathode;
the epitaxial layer is arranged above the substrate layer;
the dielectric layer is arranged on part of the outer side surface of the epitaxial layer;
the anode is arranged on the top surface of the dielectric layer and the top surface of the epitaxial layer;
the cathode is arranged on the bottom surface of the substrate layer.
Further, the substrate layer is an N-type self-supporting GaN substrate, and the epitaxial layer is an N-type GaN epitaxial layer.
Further, the thickness of the substrate layer is 2-4um, and the doping concentration of the epitaxial layer is 2×10 16 cm -3 。
Further, the thickness of the dielectric layer is 0.1um, the transverse dimension of the dielectric layer step is 0.4um, the longitudinal dimension is 0.3um, and the dielectric layer is made of silicon nitride, silicon oxide and aluminum oxide media.
Further, the anode is made of a metal alloy material with a work function ranging from 4.6eV to 6eV, and the cathode is made of a metal alloy material.
The manufacturing method of the vertical step field plate high-voltage GaN-based diode comprises the following steps of:
step 6, manufacturing an anode on the dielectric layer area and the N-type GaN epitaxial layer;
and 7, manufacturing interconnection leads.
Further, the steps in step 3 are symmetrically distributed on both sides of the anode, the width of the steps is 0.1-1um, the height is 0.1-1um, and the number of the steps is more than 2.
Further, the thickness of the dielectric layer in the step 4 is 0.1-1um, and the types include, but are not limited to, siN, siO2, al2O3, hfO2.
Compared with the prior art, the invention has the advantages that: in the vertical step field plate high-voltage GaN-based diode prepared by the invention, the device is dispersed and optimized in the vertical conducting direction by the design of the anode step field plate, so that the breakdown voltage can be greatly improved; the degree of breakdown voltage is improved along with the increase of the number of field plate steps; the vertical step field plate structure can not influence the forward current density and the forward characteristic of the device is not obviously reduced while the breakdown characteristic of the device is greatly improved; the invention has reasonable design and is worth popularizing.
Drawings
Fig. 1 is a schematic cross-sectional view of a vertical step field plate high voltage GaN-based diode of the present invention.
Fig. 2 is a schematic diagram of a process flow for manufacturing a vertical step field plate high voltage GaN-based diode according to the present invention.
Fig. 3 is a graph showing a comparison of reverse withstand voltage electric field distribution of a vertical ladder field plate high voltage GaN-based diode of the present invention and a conventional GaN-based vertical schottky barrier diode device.
As shown in the figure: 1. 2 parts of substrate layer, 2 parts of epitaxial layer, 3 parts of dielectric layer, 4 parts of anode, 5 parts of cathode.
Detailed Description
The following describes the vertical step field plate high voltage GaN-based diode and the manufacturing method thereof in detail.
The present invention will be described in detail with reference to fig. 1-3.
The vertical step field plate high-voltage GaN-based diode comprises a substrate layer 1, an epitaxial layer 2, a dielectric layer 3, an anode 4 and a cathode 5;
the epitaxial layer 2 is arranged above the substrate layer 1;
the dielectric layer 3 is arranged on part of the outer side surface of the epitaxial layer 2;
the anode 4 is arranged on the top surface of the dielectric layer 3 and the top surface of the epitaxial layer 2;
the cathode 5 is arranged on the bottom surface of the substrate layer 1.
The substrate layer 1 is an N-type self-supporting GaN substrate, and the epitaxial layer 2 is an N-type GaN epitaxial layer.
The thickness of the substrate layer 1 is 2-4um, and the doping concentration of the epitaxial layer 2 is 2 x 10 16 cm -3 。
The thickness of the dielectric layer 3 is 0.1um, the transverse dimension of the dielectric layer ladder is 0.4um, the longitudinal dimension is 0.3um, and the dielectric layer 3 is made of silicon nitride, silicon oxide and aluminum oxide media.
The anode 4 is made of a metal alloy material with a work function ranging from 4.6eV to 6eV, and the cathode 5 is made of a metal alloy material.
The manufacturing method of the vertical step field plate high-voltage GaN-based diode comprises the following steps of:
step 6, manufacturing an anode on the dielectric layer area and the N-type GaN epitaxial layer;
and 7, manufacturing interconnection leads.
The steps in the step 3 are symmetrically distributed on two sides of the anode, the width of the steps is 0.1-1um, the height of the steps is 0.1-1um, and the number of the steps is more than 2.
The thickness of the dielectric layer in the step 4 is 0.1-1um, and the types include but are not limited to SiN, siO2, al2O3 and HfO2.
The invention relates to a vertical step field plate high-voltage GaN-based diode and a manufacturing method thereof, which comprises the following specific implementation processes: firstly, an N-type self-supporting GaN substrate is selected as a substrate layer, an epitaxial layer is arranged on the substrate layer, after steps are formed by etching the epitaxial layer for multiple times, a dielectric layer is covered on the upper surface of the epitaxial layer, anodes are arranged on the dielectric layer and part of the upper surface of the epitaxial layer, and cathodes are arranged on the lower surface of the substrate layer; the epitaxial layer arranged on the substrate layer is used as a drift region, so that a vertical structure is formed between the anode and the cathode, the anode extends towards two sides of the device, and under the condition of reverse bias, the electric potential is slowly changed transversely due to the equipotential effect of the anode and the surface of the epitaxial layer, namely, the peak electric field is weakened, and the electric field is more uniformly distributed transversely;
the epitaxial layer is provided with a plurality of steps, so that the dielectric layer covers the steps, the passivation area is enlarged, the metal area of the anode is further enlarged, and the thicknesses of the dielectric layer and the stepped field plate structure of the anode are smaller than 1um; the arrangement of the stepped field plate structure enables the anode to have a similar electric field dispersion effect to the field plate structure, new electric field peaks are introduced at the edge of the stepped field plate of the anode by utilizing the stepped field plate structure, the electric field peaks at the edge of the anode of the traditional vertical diode are dispersed, and the effect of the mulberry field is further improved, so that the purpose of improving breakdown voltage is achieved; the device redistributes the electric field, improves the voltage endurance capacity, and does not influence the forward conduction performance of the device;
the thickness of the dielectric layer is 0.1um, and the dielectric layer is made of silicon nitride, silicon oxide and aluminum oxide dielectric, so that the reverse leakage of the device can be effectively inhibited;
the anode contacts with part of the dielectric layer and the epitaxial layer through the bottom and the side surface to form a stepped anode field plate structure, when reverse bias is applied to the anode, the stepped field plate structure expands the width of an anode depletion region in the transverse direction and the longitudinal direction, the anode fringe electric field is dispersed, and the fringe electric field concentration effect of the anode is relieved;
the step dielectric layer is in direct contact with the GaN drift layer, the step anode structure is in direct contact with the dielectric layer, the surface smoothness of the material is guaranteed when the epitaxial layer is etched, and surface defects caused by damage are avoided, so that electric leakage of the device is affected.
The manufacturing method of the vertical step field plate high-voltage GaN-based diode is as follows:
step 6, manufacturing an anode on the dielectric layer area and the N-type GaN epitaxial layer; throwing positive photoresist on the surface of an epitaxial material at a rotating speed of 5000r/min to obtain a photoresist mask with the thickness of 0.8um, drying the mask in a high-temperature oven with the temperature of 80 ℃ for 10min, and photoetching the mask by adopting an NSR1775I7A photoetching machine to obtain an electrode pattern; etching to remove the SiN layer with the thickness of 100nm in the anode and floating metal ring area in CF4 plasma at an etching rate of 0.5nm/s by adopting an ICP98c type inductively coupled plasma etching machine; spin coating is carried out by a spin coater at a rotating speed of 5000r/min, so that the thickness of the photoresist mask is 0.8um; baking in a high-temperature oven at 80 ℃ for 10min, exposing by adopting an NSR1775I7A photoetching machine, and photoetching and aligning to form a mask pattern of the anode and the floating metal ring area; evaporating Schottky metal by an ohm-50 electron beam evaporation table at an evaporation rate of 0.1nm/s to cover the anode region, wherein Ni/Au is sequentially selected as gate metal, and the thickness of Ni is 20nm and the thickness of Au is 200nm; metal stripping is carried out after evaporation is completed, and a complete gate electrode is obtained;
step 7, manufacturing interconnection leads; a spin coater is adopted to spin positive photoresist at the rotating speed of 5000 r/min; exposing by using an NSR1775I7A photoetching machine to form an electrode lead mask pattern; then, an ohm Iker-50 electron beam evaporation table is adopted to carry out lead electrode metal evaporation on the substrate with the mask manufactured at the evaporation rate of 0.3nm/s, wherein the thickness of Ti is 20nm, and the thickness of Au is 200um; and finally, stripping after the metal of the lead electrode is evaporated, so as to obtain the complete lead electrode.
In the vertical step field plate high-voltage GaN-based diode prepared by the invention, the device is dispersed and optimized in the vertical conducting direction by the design of the anode step field plate, so that the breakdown voltage can be greatly improved; the degree of breakdown voltage is improved along with the increase of the number of field plate steps; the vertical step field plate structure can not influence the forward current density and the forward characteristic of the device is not obviously reduced while the breakdown characteristic of the device is greatly improved; the invention has reasonable design and is worth popularizing.
The invention and its embodiments have been described above with no limitation, and the actual construction is not limited to the embodiments of the invention as shown in the drawings. In summary, if one of ordinary skill in the art is informed by this disclosure, a structural manner and an embodiment similar to the technical solution should not be creatively devised without departing from the gist of the present invention.
Claims (8)
1. A vertical step field plate high voltage GaN-based diode is characterized in that: the vertical step field plate high-voltage GaN-based diode comprises a substrate layer (1), an epitaxial layer (2), a dielectric layer (3), an anode (4) and a cathode (5);
the epitaxial layer (2) is arranged above the substrate layer (1);
the dielectric layer (3) is arranged on part of the outer side surface of the epitaxial layer (2);
the anode (4) is arranged on the top surface of the dielectric layer (3) and the top surface of the epitaxial layer (2);
the cathode (5) is arranged on the bottom surface of the substrate layer (1).
2. The vertical step field plate high voltage GaN based diode of claim 1, wherein: the substrate layer (1) is an N-type self-supporting GaN substrate, and the epitaxial layer (2) is an N-type GaN epitaxial layer.
3. A vertical step field plate as defined in claim 2The high-voltage GaN-based diode is characterized in that: the thickness of the substrate layer (1) is 2-4um, and the doping concentration of the epitaxial layer (2) is 2 x 10 16 cm -3 。
4. The vertical step field plate high voltage GaN based diode of claim 1, wherein: the thickness of the dielectric layer (3) is 0.1um, the transverse dimension of the dielectric layer ladder is 0.4um, the longitudinal dimension of the dielectric layer ladder is 0.3um, and the dielectric layer (3) is made of silicon nitride, silicon oxide and aluminum oxide media.
5. The vertical step field plate high voltage GaN based diode of claim 1, wherein: the anode (4) is made of a metal alloy material with a work function ranging from 4.6eV to 6eV, and the cathode (5) is made of a metal alloy material.
6. A method for manufacturing a vertical ladder field plate high voltage GaN-based diode comprising the vertical ladder field plate high voltage GaN-based diode of claims 1-5, characterized by: the manufacturing method of the vertical step field plate high-voltage GaN-based diode is as follows:
step 1, selecting an N-type self-supporting GaN substrate;
step 2, paving an N-type GaN epitaxial layer above the substrate layer;
step 3, etching the N-type GaN epitaxial layer area by adopting an ICP etching technology so that the area forms a step;
step 4, adopting a PECVD process to deposit and form a dielectric layer on the etching area and the edge of the N-type GaN epitaxial layer;
step 5, manufacturing a cathode on the bottom surface of the N-type GaN substrate;
step 6, manufacturing an anode on the dielectric layer area and the N-type GaN epitaxial layer;
and 7, manufacturing interconnection leads.
7. The method for manufacturing the vertical step field plate high voltage GaN-based diode as claimed in claim 6, wherein: the steps in the step 3 are symmetrically distributed on two sides of the anode, the width of the steps is 0.1-1um, the height of the steps is 0.1-1um, and the number of the steps is more than 2.
8. The method for manufacturing the vertical step field plate high voltage GaN-based diode as claimed in claim 6, wherein: the thickness of the dielectric layer in the step 4 is 0.1-1um, and the types include but are not limited to SiN, siO2, al2O3 and HfO2.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310259543.4A CN116230750A (en) | 2023-03-17 | 2023-03-17 | Vertical step field plate high-voltage GaN-based diode and manufacturing method thereof |
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| CN202310259543.4A CN116230750A (en) | 2023-03-17 | 2023-03-17 | Vertical step field plate high-voltage GaN-based diode and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117316761A (en) * | 2023-11-28 | 2023-12-29 | 英诺赛科(苏州)半导体有限公司 | Semiconductor structure and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117316761A (en) * | 2023-11-28 | 2023-12-29 | 英诺赛科(苏州)半导体有限公司 | Semiconductor structure and preparation method thereof |
| CN117316761B (en) * | 2023-11-28 | 2024-03-01 | 英诺赛科(苏州)半导体有限公司 | Semiconductor structure and preparation method thereof |
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