CN108711578A - A kind of part p-type GaN cap RESURF GaN base Schottky-barrier diodes - Google Patents
A kind of part p-type GaN cap RESURF GaN base Schottky-barrier diodes Download PDFInfo
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- CN108711578A CN108711578A CN201810496680.9A CN201810496680A CN108711578A CN 108711578 A CN108711578 A CN 108711578A CN 201810496680 A CN201810496680 A CN 201810496680A CN 108711578 A CN108711578 A CN 108711578A
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- 230000004888 barrier function Effects 0.000 claims abstract description 49
- 239000002131 composite material Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 3
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 99
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- 239000000463 material Substances 0.000 description 16
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- 239000004065 semiconductor Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
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- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
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- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
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- 238000005468 ion implantation Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
The present invention relates to a kind of part p-type GaN cap RESURF GaN base Schottky-barrier diodes, which is characterized in that including：Substrate layer, buffer layer on the substrate layer, channel layer on the buffer layer, barrier layer on the channel layer, the cathode and composite anode at the barrier layer both ends, it is connected with the composite anode and is located at the part p-type GaN cap on the barrier layer, it is covered in the barrier layer, the part p-type GaN cap, the composite anode, passivation layer on the cathode, wherein, the channel layer forms hetero-junctions with the barrier layer, the p-type GaN cap forms PN junction with the barrier layer, the cathode is cathode ohmic contact, the composite anode includes anode ohmic contact and anode Schottky contact.Introducing portion p-type GaN cap of the embodiment of the present invention, and composite anode is used, prepare the GaN base Schottky-barrier diode with low positive cut-in voltage, high breakdown reverse voltage.
Description
Technical field
The invention belongs to semiconductor applications, and in particular to a kind of part p-type GaN cap RESURF GaN base Schottky barriers
Diode.
Background technology
With the development of microelectric technique, traditional first generation Si semiconductors and second generation GaAs semiconductor power device performances
Have been approached the theoretical limit that its material itself determines.Be further reduced chip area, improve working frequency, reduce conducting resistance,
Improving the performances such as breakdown voltage becomes the focus studied both at home and abroad.And it is the wide bandgap semiconductor of representative with gallium nitride (GaN)
Material is shown one's talent in terms of preparing high performance power device in recent years, and application potential is huge.GaN base Schottky-barrier diode
It is the ideal component for substituting Si base schottky barrier diodes.However, GaN base Schottky barrier diode device is from theory at present
To technology, all there are many deficiencies, and performance reaches far away due level.Therefore, GaN base Schottky-barrier diode
Device also has prodigious potentiality to be exploited.
In order to which excellent specific properties, the prior arts such as the high critical breakdown electric field that makes full use of GaN material propose following two
Method improves the voltage endurance of GaN base SBD device.Field plate techniques are a kind of traditional common ends for being used for improving device pressure resistance
End technology.In GaN base Schottky-barrier diode the basic structure of field plate be by the method for deposit, photoetching and etching,
Schottky metal electrode periphery prepares one layer of dielectric film, and Schottky electrode is suitably extended to the top of medium, in electricity
Extremely periphery forms a circle MIM element structure.Field plate structure is by changing anode (Schottky electrode) edge depletion
The bending degree on layer boundary reduces peak electric field strength, to improve the breakdown of device to change the field distribution in depletion layer
Voltage.However the introducing of field plate can be such that device parasitic capacitance increases, and influence the high frequency and switching characteristic of device.Protect ring structure
It is one of the structure generally used in current GaN base Schottky-barrier diode (the especially device of vertical structure).This work
Skill uses the method for selective oxidation first, forms layer of oxide layer at the edge of Schottky contacts, then spreads on this basis
Or ion implanting forms one layer of p-type and protects ring structure.Protect ring structure can effective modulation device surface field, keep device lateral
Field distribution is more uniform, to improve the breakdown voltage of device.But the realization of ring structure is protected to depend in semiconductor material
The part doping that controllable precise is carried out in material, will generally be realized by thermal diffusion or ion implantation technique.For GaN materials
Material, diffusion coefficient of the p type impurity (such as Mg) in GaN is very low, so that the method that can not use thermal diffusion realizes accurately part
Doping；And ion implantation technique is not yet ripe, caused lattice damage is difficult to be eliminated with the method for annealing.
In conclusion in traditional GaN base Schottky-barrier diode, Schottky contact barrier can influence device just
To cut-in voltage and reversed pressure resistance, and be difficult both to meet to realize higher performance indicator simultaneously, this make device designing and
When work, there is compromise between forward loss and voltage endurance capability.
Invention content
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of part p-type GaN cap RESURF
GaN base Schottky-barrier diode.The technical problem to be solved in the present invention is achieved through the following technical solutions：
An embodiment of the present invention provides a kind of part p-type GaN cap RESURF GaN base Schottky-barrier diodes, packets
It includes：
Substrate layer,
Buffer layer on the substrate layer,
Channel layer on the buffer layer,
Barrier layer on the channel layer,
The cathode and composite anode at the barrier layer both ends,
It is connected with the composite anode and the part p-type GaN cap on the barrier layer,
It is covered in the barrier layer, the part p-type GaN cap, the composite anode, the passivation layer on the cathode,
Wherein, the channel layer forms hetero-junctions with the barrier layer, and the p-type GaN cap is formed with the barrier layer
PN junction, the cathode are cathode ohmic contact, and the composite anode includes anode ohmic contact and anode Schottky contact.
In one embodiment of the invention, of length no more than cathode ohmic contact of the part p-type GaN cap
The half of distance between the composite anode.
In one embodiment of the invention, the doping concentration of the part p-type GaN cap is 1 × 1016cm-3~1 ×
1018cm-3。
In one embodiment of the invention, the anode Schottky contact is groove structure.
In one embodiment of the invention, the groove structure is formed on the barrier layer.
In one embodiment of the invention, the substrate layer includes in sapphire, Si, SiC, AlN, GaN, AlGaN
It is one or more.
In one embodiment of the invention, the buffer layer, the channel layer, the barrier layer include GaN, AlN,
It is one or more in AlGaN, InGaN, InAlN.
In one embodiment of the invention, the passivation layer includes SiNx、Al2O3、AlN、Y2O3、La2O3、Ta2O5、
TiO2、HfO2、ZrO2In it is one or more.
In one embodiment of the invention, the cathode ohmic contact and the electrode material of anode ohmic contact are equal
For metal alloy compositions.
In one embodiment of the invention, it is 4.6eV- that the anode Schottky contact electrode material, which is workfunction range,
The metal alloy compositions of 6eV.
Compared with prior art, beneficial effects of the present invention：
1. the GaN base Schottky-barrier diode of the present invention possesses outstanding transient response in high-voltage power circuit, can
To realize high-speed switch, and reduce reverse leakage current；
2. the semi-conducting material GaN that the present invention uses has, energy gap is big, critical breakdown electric field is high, electronics saturation drift
The advantages that speed height and stable chemical performance, heatproof height, radioresistance, the device performance prepared is high；
3. there are many preparation methods of the part p-type GaN cap of the present invention, it is easily obtained p-type GaN cap；
4. invention introduces part p-type GaN cap, part p-type GaN cap and two-dimensional electron gas (two at raceway groove
Dimensional electron gas, 2DEG) RESURF effects are formed, it reduces the peak electric field of anode edge and laterally expands
Open up device depletion region；And p-type GaN cap right end introduces a new electric field spike in part so that device surface electricity
Field distribution is more uniform, to improve the breakdown voltage of device；
5. distance between the of length no more than cathode ohmic contact and composite anode of the part p-type GaN cap of the present invention
Half can ensure big forward current density while improving breakdown voltage, meet the requirement of power device；
6. the anode ohmic contact of the present invention contacts composition composite anode structure with anode Schottky, composite anode structure will
Field control two-dimensional electron gas channel switches principle is introduced into GaN base Schottky-barrier diode, instead of traditional GaN base Schottky barrier
Diode controls the conduction mechanism of switch using Schottky so that cut-in voltage is minimized；
7. the preparation process of the part p-type GaN cap RESURF GaN base Schottky-barrier diodes of the present invention and tradition
Process compatible has established good basis for GaN Based Power Integrated Circuit Technologies.
Description of the drawings
Fig. 1 is a kind of part p-type GaN cap RESURF GaN base Schottky-barrier diodes provided in an embodiment of the present invention
Structural schematic diagram；
Fig. 2 a- Fig. 2 j are a kind of two pole of part p-type GaN cap RESURF GaN bases Schottky barrier of the embodiment of the present invention
Tube preparation method schematic diagram；
Fig. 3 is a kind of part p-type GaN cap RESURF GaN base Schottky-barrier diodes provided in an embodiment of the present invention
And field distribution when traditional GaN base Schottky-barrier diode breakdown and voltage value comparison diagram；
Fig. 4 is a kind of part p-type GaN cap RESURF GaN base Schottky-barrier diodes provided in an embodiment of the present invention
And the transfer characteristic comparison diagram of traditional GaN base Schottky-barrier diode.
Specific implementation mode
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of part p-type GaN cap RESURF GaN base Schottky provided in an embodiment of the present invention
The structural schematic diagram of barrier diode, including：Substrate layer 201, the buffer layer 202 on the substrate layer 201, the buffer layer
Channel layer 203 on 202, the barrier layer 204 on the channel layer 203, the cathode and compound sun at 204 both ends of the barrier layer
Pole is connected with the composite anode and is located at the part p-type GaN cap 206 on the barrier layer, is covered in the barrier layer
204, the part p-type GaN cap 206, the composite anode, the passivation layer 211 on the cathode, wherein the channel layer
203 form hetero-junctions with the barrier layer 204, and the p-type GaN cap forms PN junction with the barrier layer, and the cathode is the moon
Pole Ohmic contact 207, the composite anode include anode ohmic contact 208 and anode Schottky contact 210.
The PN junction of the GaN base Schottky-barrier diode of the present invention has depletion action, while p-type GaN cap and potential barrier
Negative polarization charge at layer heterojunction boundary introduces two-dimensional hole gas (two dimensional hole gas, 2DHG), and two
Person reduces the raceway groove two-dimensional electron gas of heterojunction boundary jointly, makes the concentration distribution of raceway groove two-dimensional electron gas by uniformly dividing
Cloth becomes the distribution of the ladder from composite anode edge to cathode；In addition, due to Electric Field Modulation, GaN base Schottky barrier two
The surface of pole pipe produces new electric field peak, reduces the peak electric field of anode edge, more to Diode facets field distribution
Add uniformly, breakdown voltage is improved.
Specifically, when applying higher positive electricity to the cathode of the GaN base Schottky-barrier diode of the present invention under OFF state
When pressure, reverse-biased PN junction is formed between region and barrier layer of the p-type GaN cap close to cathode, and then form space-charge region；
Barrier layer upper surface generates positive space charge, and positive space charge can attract electric field, thus in p-type GaN cap close to cathode
Side forms new electric field spike, and to keep Diode facets field distribution more uniform, breakdown capability is improved.
In a specific embodiment, of length no more than cathode ohmic contact of the part p-type GaN cap 206
The half of distance between the composite anode.
The one of distance between the of length no more than cathode ohmic contact and composite anode of the part p-type GaN cap of the present invention
Half, it can ensure big forward current density while improving breakdown voltage, meet the requirement of power device.
In a specific embodiment, the doping concentration of the part p-type GaN cap 206 is 1 × 1016cm-3~1 ×
1018cm-3。
In a specific embodiment, the anode Schottky contact 210 is groove structure 209.
In a specific embodiment, the groove structure 209 is formed in 204 structure of the barrier layer.
Specifically, the GaN base Schottky-barrier diode of the present invention is under nature (anode not biasing), compound sun
Due to the etching of barrier layer at pole, the two-dimensional electron gas in lower channels is run out of, makes diode that natural off state be presented.
When the bias of anode increases, electronics reassembles in the raceway groove of composite anode groove, when composite anode bias is more than
When raceway groove cut-in voltage, the raceway groove of diode fully opens, and electronics can flow to composite anode from cathode, realize the low of diode
Loss is opened.
In a specific embodiment, the substrate layer 201 includes one in sapphire, Si, SiC, AlN, GaN, AlGaN
Kind is a variety of.
In a specific embodiment, the buffer layer 202, the channel layer 203, the barrier layer 204 include
It is one or more in GaN, AlN, AlGaN, InGaN, InAlN.
In a specific embodiment, the passivation layer 211 includes SiNx, Al2O3、AlN、Y2O3、La2O3、Ta2O5、
TiO2、HfO2、ZrO2In it is one or more.
In a specific embodiment, the electrode material of the cathode ohmic contact 207 and anode ohmic contact 208
It is metal alloy compositions.Common metal alloy has Ti/Al/Ni/Au or Mo/Al/Mo/Au etc..
In a specific embodiment, it is 4.6eV- that 210 electrode materials of the anode Schottky contact, which are workfunction range,
The metal alloy compositions of 6eV.Common metal alloy has Ni/Au or Ti/Au etc..
Refer to a kind of part p-type GaN cap RESURF GaN that Fig. 2 a- Fig. 2 j, Fig. 2 a- Fig. 2 j are the embodiment of the present invention
The preparation method schematic diagram of base schottky barrier diode, to prepare part p-type GaN cap as 7 μm, anode and cathode spacing is 14
μm part p-type GaN cap RESURF GaN base Schottky-barrier diodes for be described in detail, be as follows：
S101, substrate are chosen.As shown in Figure 2 a, sapphire is chosen as substrate material 201.
S102, buffer growth.It is as follows：
S1021, as shown in Figure 2 b, using metal organic chemical vapor deposition (MOCVD) technology, in substrate material 201
The GaN material that upper epitaxial thickness is 1 μm；
S1022, carbon (C) doping is carried out to the GaN material, form buffer layer 202.
S103, channel layer growth.As shown in Figure 2 c, using metal organic chemical vapor deposition (MOCVD) technology, slow
The GaN material that epitaxial thickness is 0.3 μm on layer 202 is rushed, GaN channel layers 203 are formed.
S104, barrier layer growth.As shown in Figure 2 d, using metal organic chemical vapor deposition (MOCVD) technology in ditch
Epitaxial thickness is the Al of 25nm in channel layer 2030.22Ga0.78N materials form barrier layer 204.
S105, the intrinsic GaN cap growth in top.As shown in Figure 2 e, using metal organic chemical vapor deposition (MOCVD)
Technology, growth thickness is 0.2 μm of GaN material on barrier layer 204, forms the intrinsic GaN cap in top 205.
S106, part p-type GaN cap is made.It is as follows：
S1061, as shown in figure 2f, using inductively coupled plasma (ICP) technology, intrinsic GaN at the top of selective etch
Cap layers 205, form the intrinsic GaN cap in part, and the length of the intrinsic GaN cap in the part that etches 206 is 7 μm；
S1062, using rapid thermal annealing techniques, in 870 DEG C of N250s is handled in atmosphere, to reduce the damage that etching generates
Wound；
S1063, Mg doping is carried out to the intrinsic GaN cap in part, doping concentration is 1 × 1016cm-3~1 × 1018cm-3, shape
At part p-type GaN cap 206.
S107, anode ohmic contact and cathode ohmic contact are made.It is as follows：
S1071, (HCl in dilute hydrochloric acid solution is immersed into test piece：H2O=1:1) it impregnates 1 minute, removal epitaxial wafer surface is certainly
The oxide layer so generated；
S1072, make mask using photoresist and make Ohmic electrode region by lithography in barrier layer 204；
S1073, progress oxygen plasma go counterdie to handle, and remove photoresist；
S1074, using electron beam evaporation technique, in ohmic contact regions, deposit Ti/Al/Ni/Au combines metal, wherein institute
The thickness for depositing metal Ti is 0.03 μm, the thickness of Al is 0.18 μm, the thickness of Ni is 0.05 μm, the thickness of Au is 0.06 μm；
S1075, using rapid thermal annealing techniques, in 830 DEG C of N230s is handled in atmosphere, forms anode ohmic contact 208
With cathode ohmic contact 207, as shown in Figure 2 g.
S108, anode Schottky contact is made.It is as follows：
S1081, as shown in fig. 2h, using Cl2Base RIE lithographic methods, perform etching barrier layer 204, apart from cathode
Groove structure 209 is etched at 14 μm of Ohmic contact, it is 3nm to be etched to barrier layer 204；
S1082, as shown in fig. 2i, using electron beam evaporation technique, in 209 region of groove structure, deposit Ni/Au/Ni is closed
Gold completes the making of Schottky contacts 210, wherein the thickness of deposited W metal is 0.05 μm, the thickness of Au is 0.2 μm, Ni
Thickness be 0.01 μm；
After S1083, the completing of Schottky contacts 210, device is put into 300 DEG C and is full of N2Atmosphere in make annealing treatment
30 minutes, to enhance contact of the Schottky electrode with material, optimize Schottky electrode contact performance.
S109, passivation layer is made.It is as follows：
S1091, as shown in figure 2j, using plasma enhances chemical vapor deposition techniques (PECVD), and to deposit 300nm thick
SiN forms passivation layer 211 as surface protection layer material.Passivation layer can protect device surface not oxygen and steam in by air
The influence of diffusion, avoids external mechanical from damaging.
The preparation process of the part p-type GaN cap RESURF GaN base Schottky-barrier diodes of the present invention and traditional work
Skill is compatible with, and good basis has been established for GaN Based Power Integrated Circuit Technologies.
Fig. 3 is a kind of part p-type GaN cap RESURF GaN bases Schottky-barrier diode provided by the invention and tradition
Field distribution when GaN base Schottky-barrier diode punctures and voltage value comparison diagram.It is in two kinds of lateral device dimensions
19.5 μm, anode lengths be 4.5 μm, anode and cathode spacing is 14 μm, the part p-type GaN cap length of the embodiment of the present invention
Under conditions of 7 μm, is emulated using Silvaco softwares, obtain Fig. 3.As seen from Figure 3, traditional devices (traditional GaN base Xiao
Special base barrier diode) in there are one electric field spike, breakdown voltage 274V；New device (the GaN base of the embodiment of the present invention
Schottky-barrier diode) in produce a new electric field spike, to there are two electric field spike so that device surface electric field
It is distributed more uniform, breakdown voltage 1942V.Compared to traditional devices, the breakdown voltage of new device improves 609%.
Fig. 4 is a kind of part p-type GaN cap RESURF GaN bases Schottky-barrier diode provided by the invention and tradition
The transfer characteristic comparison diagram of GaN base Schottky-barrier diode.Two kinds of lateral device dimensions be 19.5 μm, anode lengths it is equal
It is 14 μm for 4.5 μm, anode and cathode spacing, under conditions of the part p-type GaN cap length of the embodiment of the present invention is 7 μm, uses
Silvaco softwares are emulated, and Fig. 4 is obtained.From fig. 4, it can be seen that traditional devices (traditional GaN base Schottky-barrier diode) is opened
It is 0.93V to open voltage, and the cut-in voltage of new device (the GaN base Schottky-barrier diode of the embodiment of the present invention) is 0.45V.
Compared to traditional devices, the cut-in voltage of new device reduces 52%.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
The specific implementation of the present invention is confined to these explanations.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to the present invention's
Protection domain.
Claims (10)
1. a kind of part p-type GaN cap RESURF GaN base Schottky-barrier diodes, which is characterized in that including：
Substrate layer (201),
Buffer layer (202) on the substrate layer (201),
Channel layer (203) on the buffer layer (202),
Barrier layer (204) on the channel layer (203),
The cathode and composite anode at barrier layer (204) both ends,
It is connected with the composite anode and the part p-type GaN cap (206) on the barrier layer,
It is covered in the barrier layer (204), the part p-type GaN cap (206), the composite anode, blunt on the cathode
Change layer (211),
Wherein, the channel layer (203) and the barrier layer (204) form hetero-junctions, the p-type GaN cap (206) with it is described
Barrier layer (204) forms PN junction, and the cathode is cathode ohmic contact (207), and the composite anode includes anode ohmic contact
(208) and anode Schottky contacts (210).
2. part p-type GaN cap RESURF GaN base Schottky-barrier diodes as described in claim 1, which is characterized in that
The spacing of of length no more than cathode ohmic contact (207) and the composite anode of the part p-type GaN cap (206)
From half.
3. p-type GaN cap RESURF GaN base Schottky-barrier diodes as described in claim 1, which is characterized in that described
The doping concentration of part p-type GaN cap (206) is 1 × 1016cm-3~1 × 1018cm-3。
4. part p-type GaN cap RESURF GaN base Schottky-barrier diodes as described in claim 1, which is characterized in that
The anode Schottky contact (210) is groove structure (209).
5. the part p-type GaN cap RESURF GaN base Schottky-barrier diodes described in claim 4, which is characterized in that institute
Groove structure (209) is stated to be formed in the barrier layer (204) structure.
6. part p-type GaN cap RESURF GaN base Schottky-barrier diodes as described in claim 1, which is characterized in that
The substrate layer (201) includes one or more in sapphire, Si, SiC, AlN, GaN, AlGaN.
7. part p-type GaN cap RESURF GaN base Schottky-barrier diodes as described in claim 1, which is characterized in that
The buffer layer (202), the channel layer (203), the barrier layer (204) include GaN, AlN, AlGaN, InGaN,
It is one or more in InAlN.
8. part p-type GaN cap RESURF GaN base Schottky-barrier diodes as described in claim 1, which is characterized in that
The passivation layer (211) includes SiNx、Al2O3、AlN、Y2O3、La2O3、Ta2O5、TiO2、HfO2、ZrO2In it is one or more.
9. part p-type GaN cap RESURF GaN base Schottky-barrier diodes as described in claim 1, which is characterized in that
The electrode material of the cathode ohmic contact (207) and anode ohmic contact (208) is metal alloy compositions.
10. layer segment p-type GaN cap RESURF GaN base Schottky-barrier diodes as described in claim 1, feature exist
In described anode Schottky contact (210) electrode material is the metal alloy compositions that workfunction range is 4.6eV-6eV.
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| CN114023808A (en) * | 2021-11-04 | 2022-02-08 | 西安电子科技大学 | AlGaN/GaN heterojunction multi-channel power diode with P-type terminal and manufacturing method |
| CN114250510A (en) * | 2021-12-20 | 2022-03-29 | 中电化合物半导体有限公司 | Epitaxial structure for gallium nitride-based radio frequency device and preparation method thereof |
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