CN112768508B - Back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device and preparation method thereof - Google Patents

Back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device and preparation method thereof Download PDF

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CN112768508B
CN112768508B CN202110084430.6A CN202110084430A CN112768508B CN 112768508 B CN112768508 B CN 112768508B CN 202110084430 A CN202110084430 A CN 202110084430A CN 112768508 B CN112768508 B CN 112768508B
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CN112768508A (en
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何云龙
马晓华
杨凌
王冲
郑雪峰
郝跃
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Xidian University
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Abstract

The invention relates to a back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device and a preparation method thereof, wherein the HEMT device comprises: the substrate, the P-GaN layer, the GaN channel layer and the AlGaN barrier layer are sequentially stacked from bottom to top; a source electrode disposed on one side of the AlGaN barrier layer; a drain electrode disposed on the other side of the AlGaN barrier layer and opposite to the source electrode; the substrate, the P-GaN layer, the GaN channel layer and the AlGaN barrier layer are arranged between the source electrode and the drain electrode in part of the thickness to form a fin-shaped structure; the gate electrode is positioned between the source electrode and the drain electrode, covers two side surfaces of the fin-shaped structure, which are vertical to the substrate, and the top surface of the fin-shaped structure, and forms ohmic contact with the P-GaN layer; and the gate dielectric layer is arranged between the gate electrode and the fin-shaped structure. According to the back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device, a back gate is formed by the P-GaN layer and the gate metal, the AlGaN/GaN heterojunction gate electric field is adjusted, and the breakdown voltage of the device is favorably improved.

Description

Back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a back gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device and a preparation method thereof.
Background
In recent years, third generation semiconductors represented by GaN have been extensively and intensively studied by many researchers at home and abroad due to their characteristics such as large forbidden band width, high breakdown electric field, and high electron saturation velocity, and have been drawing attention as a result of research.
By virtue of excellent material characteristics, the AlGaN/GaN heterojunction high electron mobility transistor HEMT has the unique advantages in the field of high voltage and high power, and numerous researches are attracted when the device is pursued to have high threshold, high voltage and high power. In recent years, due to the rapid development of the switching power supply and the fast charging market, gaN enhanced high-power devices become a research hotspot. Due to the characteristics of spontaneous polarization and piezoelectric polarization, the AlGaN/GaN HEMT is a natural depletion type device, and an enhancement type device is required when the AlGaN/GaN HEMT is applied to the field of high-voltage switches, however, the enhancement type device manufactured at present has great influence on gate electrode leakage current and breakdown voltage.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a back gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides a back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device, which comprises:
the substrate, the P-GaN layer, the GaN channel layer and the AlGaN barrier layer are sequentially stacked from bottom to top;
a source electrode disposed on one side on the AlGaN barrier layer;
a drain electrode disposed on the other side of the AlGaN barrier layer and opposite to the source electrode;
the substrate, the P-GaN layer, the GaN channel layer and the AlGaN barrier layer with partial thickness between the source electrode and the drain electrode form a fin-shaped structure;
the gate electrode is positioned between the source electrode and the drain electrode, covers two side faces, perpendicular to the substrate, of the fin-shaped structure and the top face of the fin-shaped structure, and forms ohmic contact with the P-GaN layer;
and the gate dielectric layer is arranged between the gate electrode and the fin-shaped structure.
In one embodiment of the present invention, a passivation layer covering regions between the source electrode and the gate electrode and between the gate electrode and the drain electrode is further included.
In one embodiment of the invention, the substrate comprises a substrate base sheet, an AlN nucleating layer and a GaN buffer layer which are sequentially stacked from bottom to top, wherein the substrate base sheet is a Si substrate, a sapphire substrate or a SiC substrate.
In one embodiment of the invention, the thickness of the P-GaN layer is 50-200nm, the P-type doping concentration is 1 × 10 18 cm -3 -1×10 19 cm -3 。
In one embodiment of the invention, the thickness of the GaN channel layer is 50-150nm, the thickness of the AlGaN barrier layer is 10-20nm, and the composition of Al is 20% -30%.
In one embodiment of the invention, the fin-shaped structure has a width of 50-200nm and a height of 120-380nm.
In one embodiment of the present invention, the gate dielectric layer is SiO 2 The dielectric layer is 10-20nm thick.
The invention provides a preparation method of a back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device, which comprises the following steps:
s1: selecting a substrate, and growing an AlN nucleating layer, a GaN buffer layer, a P-GaN layer, a GaN channel layer and an AlGaN barrier layer on the substrate in sequence;
s2: preparing a source electrode and a drain electrode on the AlGaN barrier layer;
s3: etching the AlGaN barrier layer, the GaN channel layer, the P-GaN layer and the GaN buffer layer with partial thickness between the source electrode and the drain electrode to form a fin-shaped structure;
s4: depositing a gate dielectric layer between the source electrode and the drain electrode, wherein the gate dielectric layer covers two side surfaces of the fin-shaped structure vertical to the substrate and the top surface of the fin-shaped structure;
s5: preparing a gate electrode on the gate dielectric layer;
s6: etching the gate dielectric layer outside the gate electrode area, and depositing passivation layers in areas between the source electrode and the gate electrode and between the gate electrode and the drain electrode;
s7: and preparing metal interconnection on the electrode.
In one embodiment of the present invention, an ohmic contact is formed between the gate electrode and the P-GaN layer.
In one embodiment of the invention, the thickness of the P-GaN layer is 50-200nm, the P-type doping concentration is 1 × 10 18 cm -3 -1×10 19 cm -3 。
Compared with the prior art, the invention has the beneficial effects that:
1. according to the back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device, a back gate is formed by the P-GaN layer and the gate metal, the AlGaN/GaN heterojunction gate electric field is adjusted, and the breakdown voltage of the device is favorably improved.
2. According to the back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device, the gate electrode controls the channel from four directions, so that the gate control capability is obviously enhanced, and the leakage current of the gate electrode can be effectively reduced.
3. The back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device combines the fin-shaped structure and the back gate structure to form an enhanced high-power device with good performance, and the threshold voltage stability of the device is good.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a perspective structural view of a back gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of a back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a method for manufacturing a back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to an embodiment of the present invention;
fig. 4a to fig. 4f are process diagrams of manufacturing a back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to an embodiment of the present invention.
Detailed Description
In order to further explain the technical means and effects of the present invention adopted to achieve the predetermined object, the following detailed description is made with reference to the accompanying drawings and the detailed description to provide a back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device and a manufacturing method thereof according to the present invention.
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. While the present invention has been described in connection with the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Example one
Referring to fig. 1 and fig. 2 in combination, fig. 1 is a perspective structural view of a back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to an embodiment of the present invention; fig. 2 is a cross-sectional view of a back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to an embodiment of the present invention. As shown in the figure, the back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device of the present embodiment includes: the GaN-based light-emitting diode comprises a substrate 1, a P-GaN layer 2, a GaN channel layer 3, an AlGaN barrier layer 4, a source electrode 5, a drain electrode 6, a gate electrode 8 and a gate dielectric layer 9. The substrate 1, the P-GaN layer 2, the GaN channel layer 3 and the AlGaN barrier layer 4 are sequentially stacked from bottom to top. The source electrode 5 is provided on one side of the AlGaN barrier layer 4, and the drain electrode 6 is provided on the other side of the AlGaN barrier layer 4 so as to face the source electrode 5. The substrate 1, the P-GaN layer 2, the GaN channel layer 3 and the AlGaN barrier layer 4 with partial thickness between the source electrode 5 and the drain electrode 6 form a fin-shaped structure 7. The gate electrode 8 is located between the source electrode 5 and the drain electrode 6, covers two side faces, perpendicular to the substrate 1, of the fin-shaped structure 7 and the top face of the fin-shaped structure 7, and ohmic contact is formed between the gate electrode 8 and the P-GaN layer 2. And the gate dielectric layer 9 is arranged between the gate electrode 8 and the fin-shaped structure 7.
In this embodiment, the GaN channel layer 3 and the AlGaN barrier layer 4 form an AlGaN/GaN heterojunction, the substrate 1, the P-GaN layer 2, the GaN channel layer 3, and the AlGaN barrier layer 4 with a partial thickness form a fin structure 7, that is, the fin structure 7 has a height exceeding the P-GaN layer 2, an ohmic contact is formed between the gate electrode 8 and the P-GaN layer 2, the gate electrode 8 and the P-GaN layer 2 form an ohmic contact to form a back gate at the bottom of the AlGaN/GaN heterojunction, the channel can be modulated from the bottom, and the peak value of the electric field at the edge of the gate electrode 8 is reduced. Meanwhile, due to the influence of the side gate fin-shaped structure 7, forward shift of the threshold voltage of the device can be realized.
According to the back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device, the mode that the P-GaN layer and the gate metal form the back gate is adopted, the AlGaN/GaN heterojunction gate electric field is adjusted, and the breakdown voltage of the device is favorably improved. And the gate electrode controls the channel from four directions, so that the gate control capability is obviously enhanced, and the leakage current of the gate electrode can be effectively reduced.
Further, the back-gate fully-controlled AlGaN/GaN heterojunction enhancement mode power HEMT device of the present embodiment further includes a passivation layer (not shown in the figure) covering regions between the source electrode 5 and the gate electrode 8 and between the gate electrode 8 and the drain electrode 6.
In the present embodiment, the substrate 1 includes a substrate base wafer 101, an AlN nucleation layer 102, and a GaN buffer layer 103, which are stacked in this order from bottom to top, and optionally, the substrate base wafer 101 is a Si substrate, a sapphire substrate, or a SiC substrate.
In this embodiment, the thickness of the P-GaN layer 2 is 50-200nm, the P-type doping concentration is 1 × 10 18 cm -3 -1×10 19 cm -3 。
In this embodiment, the thickness of the GaN channel layer 3 is 50-150nm, the thickness of the AlGaN barrier layer 4 is 10-20nm, and the composition of Al is 20-30%.
In the present embodiment, the fin structure 7 has a width of 50-200nm and a height of 120-380nm. The width of the fin-shaped structure 7 is designed to be less than 200nm, so that the side gate of the device can exert control capability, the threshold voltage is improved, and the gate leakage current is reduced.
In this embodiment, the gate dielectric layer 9 is SiO 2 The dielectric layer is 10-20nm thick. Grid mediumThe layer 9 can reduce the leakage current of the gate electrode 8 and can also shield the influence of the schottky contact formed between the gate electrode 8 and the sidewall.
The back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device combines the fin-shaped structure and the back-gate structure to form an enhanced high-power device with good performance, and the threshold voltage stability of the device is good.
Example two
The embodiment provides a method for manufacturing a back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device, and please refer to fig. 3-3, which is a schematic diagram of a method for manufacturing a back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to an embodiment of the present invention, and as shown in the figure, the method includes:
s1: selecting a substrate, and growing an AlN nucleating layer, a GaN buffer layer, a P-GaN layer, a GaN channel layer and an AlGaN barrier layer on the substrate in sequence;
s2: preparing a source electrode and a drain electrode on the AlGaN barrier layer;
s3: etching the AlGaN barrier layer, the GaN channel layer, the P-GaN layer and the GaN buffer layer with partial thickness between the source electrode and the drain electrode to form a fin-shaped structure;
s4: depositing a gate dielectric layer between the source electrode and the drain electrode, wherein the gate dielectric layer covers two side surfaces of the fin-shaped structure vertical to the substrate and the top surface of the fin-shaped structure;
s5: preparing a gate electrode on the gate dielectric layer;
s6: etching the gate dielectric layer outside the gate electrode area, and depositing passivation layers in the areas between the source electrode and the gate electrode and between the gate electrode and the drain electrode;
s7: and preparing metal interconnection on the electrode.
In this embodiment, ohmic contact is formed between the gate electrode and the P-GaN layer having a thickness of 50-200nm and a P-type doping concentration of 1 × 10 18 cm -3 -1×10 19 cm -3 。
Further, the following three specific examples are given to describe in detail the preparation method of the back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device of this embodiment. Referring to fig. 4a to fig. 4f in combination, fig. 4a to fig. 4f are schematic views illustrating a process for manufacturing a back-gate fully-controlled AlGaN/GaN heterojunction enhancement mode power HEMT device according to an embodiment of the present invention.
(1) Preparing a back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device with a fin-shaped structure width of 50 nm:
step 1: selecting a Si substrate 001, and growing an AlN nucleating layer 002, a GaN buffer layer 003, a P-GaN layer 004, a GaN channel layer 005 and an AlGaN barrier layer 006 on the Si substrate 001 in sequence, as shown in FIG. 4 a.
Wherein the thickness of the GaN buffer layer 003 is 1 μm, the thickness of the P-GaN layer 004 is 50nm, the P-type doping concentration is 1 × 10 18 cm -3 The thickness of the GaN channel layer 005 is 50nm, the thickness of the AlGaN barrier layer 006 is 20nm, the al component is 30%, and the GaN channel layer 005 and the AlGaN barrier layer 006 form an AlGaN/GaN heterojunction.
Step 2: a source electrode 007 and a drain electrode 008 are prepared.
a) Exposing by using a Stepper photoetching machine to form a source and drain region mask pattern;
b) Performing source and drain ohmic contact on metal at an evaporation rate of 0.1nm/s by adopting an Ohmiker-50 electron beam evaporation table, and stripping the metal after the evaporation of the source and drain ohmic contact metal is finished;
wherein, the source metal and the drain metal are sequentially selected from Ti/Al/Ni/Au, the Ti thickness is 20nm, the Al thickness is 120nm, the Ni thickness is 45nm, and the Au thickness is 55nm;
c) N at 870 ℃ C 2 Rapid thermal annealing is performed for 30 seconds in the atmosphere to alloy the source and drain ohmic contact metals, completing the preparation of the source electrode 007 and the drain electrode 008, as shown in fig. 4 b.
And 3, step 3: fin structures 009 are prepared.
a) Firstly, photoresist is spun by a photoresist spinner to obtain a photoresist mask, and then an electron beam lithography machine is used for exposure to form a strip-shaped pattern;
b) The substrate with the mask is etched in Cl by an inductively coupled plasma etching machine 2 Etching the fin-shaped structure 009 in the plasma respectively to isolate the mesa, wherein the etching depth of the fin-shaped structure 009 is 120nm,the nanochannel width was 50nm as shown in fig. 4 c.
And 4, step 4: depositing SiO with the thickness of 10nm on a substrate by adopting a PECVD process 2 And a dielectric layer 010, as shown in fig. 4 d.
And 5: a gate electrode 011 is prepared.
And (3) evaporating the gate metal at an evaporation rate of 0.1nm/s by using an Ohmiker-50 electron beam evaporation table, and stripping the metal after the evaporation is finished to obtain a complete gate electrode 011, as shown in FIG. 4 e.
Wherein, the gate metal is sequentially selected from Ni/Au, the thickness of Ni is 20nm, and the thickness of Au is 200nm.
Step 6: the dielectric layer outside the gate electrode area is etched away using an inductively coupled plasma etcher, as shown in fig. 4 f.
And 7: passivation layers and open-hole interconnects (not shown) are prepared.
a) Adopting PECVD process to prepare NH 3 Is a source of N, siH 4 The source is a Si source, and a SiN passivation layer with a thickness of 50nm is deposited on the uppermost AlGaN barrier layer 006;
b) In CF using an inductively coupled plasma etcher 4 Etching and removing the SiN layer in the electrode area in the plasma to form an interconnection opening;
c) And (3) carrying out lead electrode metal evaporation on the substrate with the mask manufactured by adopting an Ohmiker-50 electron beam evaporation table at an evaporation rate of 0.3nm/s, and finally stripping after the lead electrode metal evaporation is finished to obtain a complete lead electrode. Wherein, the metal is Ti/Au, the thickness of Ti is 20nm, and the thickness of Au is 200nm.
(2) Preparing a back gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device with a fin-shaped structure width of 125 nm:
step 1: selecting a Si substrate 001, and growing an AlN nucleating layer 002, a GaN buffer layer 003, a P-GaN layer 004, a GaN channel layer 005 and an AlGaN barrier layer 006 on the Si substrate 001 in sequence, as shown in FIG. 4 a.
Wherein the thickness of the GaN buffer layer 003 is 3 μm, the thickness of the P-GaN layer 004 is 125nm, the P-type doping concentration is 5 × 10 18 cm -3 The thickness of the GaN channel layer 005 is 100nm, and the thickness of the AlGaN barrier layer 006 is 15nm, the Al component is 25%, and the GaN channel layer 005 and the AlGaN barrier layer 006 form an AlGaN/GaN heterojunction.
Step 2: a source electrode 007 and a drain electrode 008 are prepared.
a) Exposing by using a Stepper photoetching machine to form a source and drain region mask pattern;
b) Adopting an Ohmiker-50 electron beam evaporation table to perform source and drain ohmic contact on metal at an evaporation rate of 0.1nm/s, and performing metal stripping after the evaporation of the source and drain ohmic contact metal is finished;
wherein, the source metal and the drain metal are sequentially selected from Ti/Al/Ni/Au, the Ti thickness is 20nm, the Al thickness is 120nm, the Ni thickness is 45nm, and the Au thickness is 55nm;
c) N at 870 ℃ C 2 Rapid thermal annealing is performed for 30 seconds in the atmosphere to alloy the source and drain ohmic contact metals, completing the preparation of the source electrode 007 and the drain electrode 008, as shown in fig. 4 b.
And step 3: fin structures 009 are prepared.
a) Firstly, photoresist is spun by a photoresist spinner to obtain a photoresist mask, and then an electron beam lithography machine is used for exposure to form a strip-shaped pattern;
b) The substrate with the mask is etched in Cl by an inductively coupled plasma etching machine 2 The fin-shaped structure 009 is etched in the plasma separately from the mesa, the depth of the fin-shaped structure 009 is 250nm, and the nano-channel width is 125nm, as shown in fig. 4 c.
And 4, step 4: depositing SiO with the thickness of 15nm on a substrate by adopting a PECVD process 2 And a dielectric layer 010, as shown in fig. 4 d.
And 5: a gate electrode 011 is prepared.
And (3) evaporating the gate metal at an evaporation rate of 0.1nm/s by using an Ohmiker-50 electron beam evaporation table, and stripping the metal after the evaporation is finished to obtain a complete gate electrode 011, as shown in FIG. 4 e.
Wherein, the gate metal is sequentially selected from Ni/Au, the thickness of Ni is 20nm, and the thickness of Au is 200nm.
Step 6: the dielectric layer outside the gate electrode area is etched away using an inductively coupled plasma etcher, as shown in fig. 4 f.
And 7: passivation layers and open-hole interconnects (not shown) are prepared.
a) Adopting PECVD process to prepare NH 3 Is a source of N, siH 4 The source is a Si source, and a SiN passivation layer with a thickness of 50nm is deposited on the uppermost AlGaN barrier layer 006;
b) In CF using an inductively coupled plasma etcher 4 Etching and removing the SiN layer in the electrode area in the plasma to form an interconnection opening;
c) And (3) carrying out lead electrode metal evaporation on the substrate with the mask manufactured by adopting an Ohmiker-50 electron beam evaporation table at an evaporation rate of 0.3nm/s, and finally stripping after the lead electrode metal evaporation is finished to obtain a complete lead electrode. Wherein, the metal is Ti/Au, the thickness of Ti is 20nm, and the thickness of Au is 200nm.
(3) Preparing a back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device with a fin-shaped structure width of 200 nm:
step 1: selecting a Si substrate 001, and growing an AlN nucleating layer 002, a GaN buffer layer 003, a P-GaN layer 004, a GaN channel layer 005 and an AlGaN barrier layer 006 on the Si substrate 001 in sequence, as shown in FIG. 4 a.
Wherein the thickness of the GaN buffer layer 003 is 5 μm, the thickness of the P-GaN layer 004 is 200nm, the P-type doping concentration is 1 × 10 19 cm -3 The thickness of the GaN channel layer 005 is 150nm, the thickness of the AlGaN barrier layer 006 is 10nm, the al component is 20%, and the GaN channel layer 005 and the AlGaN barrier layer 006 form an AlGaN/GaN heterojunction.
Step 2: a source electrode 007 and a drain electrode 008 are prepared.
a) Exposing by using a Stepper photoetching machine to form a source region mask pattern and a drain region mask pattern;
b) Adopting an Ohmiker-50 electron beam evaporation table to perform source and drain ohmic contact on metal at an evaporation rate of 0.1nm/s, and performing metal stripping after the evaporation of the source and drain ohmic contact metal is finished;
wherein, the source metal and the drain metal are sequentially selected from Ti/Al/Ni/Au, the Ti thickness is 20nm, the Al thickness is 120nm, the Ni thickness is 45nm, and the Au thickness is 55nm;
c) N at 870 ℃ C 2 Performing rapid thermal annealing for 30s in atmosphere to carry out annealing to the source and the drainThe ohmic contact metal is alloyed to complete the preparation of the source electrode 007 and the drain electrode 008 as shown in fig. 4 b.
And 3, step 3: fin structures 009 are prepared.
a) Firstly, photoresist is spun by a photoresist spinner to obtain a photoresist mask, and then an electron beam lithography machine is used for exposure to form a strip-shaped pattern;
b) The substrate with the mask is etched in Cl by an inductively coupled plasma etching machine 2 The fin-shaped structure 009 is etched in the plasma and isolated from the mesa, the depth of the fin-shaped structure 009 is 380nm, and the width of the nano-channel is 200nm, as shown in fig. 4 c.
And 4, step 4: depositing SiO with the thickness of 20nm on a substrate by adopting a PECVD process 2 And a dielectric layer 010, as shown in fig. 4 d.
And 5: a gate electrode 011 is prepared.
And (3) evaporating the gate metal at an evaporation rate of 0.1nm/s by using an Ohmiker-50 electron beam evaporation table, and stripping the metal after the evaporation is finished to obtain a complete gate electrode 011, as shown in FIG. 4 e.
Wherein, the gate metal is sequentially selected from Ni/Au, the thickness of Ni is 20nm, and the thickness of Au is 200nm.
Step 6: the dielectric layer outside the gate electrode area is etched away using an inductively coupled plasma etcher as shown in figure 4 f.
And 7: passivation layers and open-hole interconnects (not shown) are prepared.
a) NH by adopting PECVD process 3 Is a source of N, siH 4 The source is a Si source, and a SiN passivation layer with a thickness of 50nm is deposited on the uppermost AlGaN barrier layer 006;
b) In CF using an inductively coupled plasma etcher 4 Etching and removing the SiN layer in the electrode area in the plasma to form an interconnection opening;
c) And (3) carrying out lead electrode metal evaporation on the substrate with the mask manufactured by adopting an Ohmiker-50 electron beam evaporation table at an evaporation rate of 0.3nm/s, and finally stripping after the lead electrode metal evaporation is finished to obtain a complete lead electrode. Wherein, the metal is Ti/Au, the thickness of Ti is 20nm, and the thickness of Au is 200nm.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising one of 8230, and" comprising 8230does not exclude the presence of additional like elements in an article or device comprising the element. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The directional or positional relationships indicated by "upper", "lower", "left", "right", etc., are based on the directional or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (9)

1. A back gate full control type AlGaN/GaN heterojunction enhanced power HEMT device is characterized by comprising:
the substrate, the P-GaN layer, the GaN channel layer and the AlGaN barrier layer are sequentially stacked from bottom to top;
a source electrode disposed on one side of the AlGaN barrier layer;
a drain electrode disposed on the other side of the AlGaN barrier layer and opposite to the source electrode;
the substrate, the P-GaN layer, the GaN channel layer and the AlGaN barrier layer with partial thickness between the source electrode and the drain electrode form a fin-shaped structure;
the gate electrode is positioned between the source electrode and the drain electrode, covers two side faces, perpendicular to the substrate, of the fin-shaped structure and the top face of the fin-shaped structure, and forms ohmic contact with the P-GaN layer;
and the gate dielectric layer is arranged between the gate electrode and the fin-shaped structure.
2. The back-gate fully controlled AlGaN/GaN heterojunction enhancement mode power HEMT device according to claim 1, further comprising a passivation layer covering regions between the source electrode and the gate electrode and between the gate electrode and the drain electrode.
3. The back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to claim 1, wherein the substrate comprises a substrate, an AlN nucleating layer and a GaN buffer layer which are sequentially stacked from bottom to top, wherein the substrate is a Si substrate, a sapphire substrate or a SiC substrate.
4. The back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to claim 1, wherein the thickness of the P-GaN layer is 50-200nm, and the P-type doping concentration is 1 x 10 18 cm -3 -1×10 19 cm -3 。
5. The back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device as claimed in claim 1, wherein the thickness of the GaN channel layer is 50-150nm, the thickness of the AlGaN barrier layer is 10-20nm, and the composition of Al is 20-30%.
6. The back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to claim 1, wherein the fin-shaped structure has a width of 50-200nm and a height of 120-380nm.
7. The back-gate fully-controlled AlGaN/GaN heterojunction enhanced power HEMT device according to claim 1, wherein the gate dielectric layer is SiO 2 The dielectric layer is 10-20nm thick.
8. A preparation method of a back gate full-control AlGaN/GaN heterojunction enhanced power HEMT device is characterized by comprising the following steps:
s1: selecting a substrate, and growing an AlN nucleating layer, a GaN buffer layer, a P-GaN layer, a GaN channel layer and an AlGaN barrier layer on the substrate in sequence;
s2: preparing a source electrode and a drain electrode on the AlGaN barrier layer;
s3: etching the AlGaN barrier layer, the GaN channel layer, the P-GaN layer and the GaN buffer layer with partial thickness between the source electrode and the drain electrode to form a fin-shaped structure;
s4: depositing a gate dielectric layer between the source electrode and the drain electrode, wherein the gate dielectric layer covers two side surfaces of the fin-shaped structure, which are vertical to the substrate, and the top surface of the fin-shaped structure;
s5: preparing a gate electrode on the gate dielectric layer;
s6: etching the gate dielectric layer outside the gate electrode area, and depositing passivation layers in the areas between the source electrode and the gate electrode and between the gate electrode and the drain electrode;
s7: preparing metal interconnection on the electrode;
the gate electrode is positioned between the source electrode and the drain electrode, covers two side faces of the fin-shaped structure perpendicular to the substrate and the top face of the fin-shaped structure, and forms ohmic contact with the P-GaN layer; the gate dielectric layer is located between the gate electrode and the fin-shaped structure.
9. Root of herbaceous plantThe method according to claim 8, wherein the P-GaN layer has a thickness of 50-200nm and a P-type doping concentration of 1 x 10 18 cm -3 -1×10 19 cm -3 。
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