CN107393969A - A kind of gallium nitride based schottky diode semiconductor devices and manufacture method - Google Patents
A kind of gallium nitride based schottky diode semiconductor devices and manufacture method Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 121
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 125
- 239000002184 metal Substances 0.000 claims abstract description 125
- 230000004888 barrier function Effects 0.000 claims abstract description 63
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 238000005036 potential barrier Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- -1 carbon ion Chemical class 0.000 claims abstract description 6
- 238000001459 lithography Methods 0.000 claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 19
- 239000010936 titanium Substances 0.000 claims description 14
- 238000009825 accumulation Methods 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 61
- 238000010586 diagram Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 239000010931 gold Substances 0.000 description 8
- 238000011084 recovery Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
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- 230000008569 process Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
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- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
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- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A kind of gallium nitride based schottky diode semiconductor devices and manufacture method, comprise the following steps：AlN layers are sequentially formed in silicon monocrystalline substrate, adulterate the AlGaN layer of Fe ions, the GaN epitaxial layer for adulterating carbon ion, undoped GaN epitaxial layer, undoped AlGaN epitaxial layers, and GaN cap；The first contact hole mask perforate is formed, and cathodic metal is formed in the first contact hole mask perforate；The first schottky junctions contact hole is formed, the first schottky metal is formed in the first schottky junctions contact hole, and form low barrier schottky with GaN surfaces and contact；The second schottky junctions contact hole is formed, the second schottky metal is formed in the second schottky junctions contact hole, and form high barrier schottky with GaN surfaces and contact；Form positive the plate bed course and cathodic metal bed course of Schottky diode.The semiconductor devices of the present invention, is made up of the Schottky Barrier Contact of two kinds of different potential barriers, can inject more electric currents under low conducting voltage, during reverse bias, can keep relatively low reverse leakage current.
Description
Technical field
The present invention relates to a kind of gallium nitride semiconductor device, more particularly to a kind of gallium nitride based schottky diode semiconductor
Device and manufacture method.
Background technology
Third generation semi-conducting material, including CdS, ZnO, SiC, GaN, diamond etc..The forbidden band of these semi-conducting materials
Width is both greater than 2.2eV, in terms of electronic device, SiC and GaN is studied relatively ripe, is current generation
Focus in boundary's semi-conducting material and device research field.
Gallium nitride (GaN) energy gap is 3.4eV, and broad stopband enables GaN materials to bear higher work temperature
Degree, also makes GaN materials have bigger breakdown electric field, bigger breakdown electric field means that device can bear higher work
Voltage, the power characteristic of device can be improved, GaN also has high electronics saturation drift velocity and high thermal conductivity, and total comes
Say, GaN may be employed to manufacture high frequency, the excellent material of high-power semiconductor devices.
Gallium nitride radical heterojunction material is the important representative in gallium nitride (GaN) material, and it has continued GaN materials height
The advantages that breakdown electric field, high electronics saturation drift velocity.A1GaN/GaN is the primary structure generation in GaN base heterojunction material
Table, in A1GaN/GaN hetero-junctions, A1GaN is wide-band gap material, and GaN is arrowband material, and both form I type hetero-junctions,
2DEG is located at the GaN sides of heterojunction boundary.
AlGaN/GaN has been applied in terms of photoelectricity and electronic device in large quantities, and this is also to promote GaN materials to height
One of horizontal and low cost development power, opto-electronic device mainly includes the laser of AlGaN/GaN multi-quantum pit structures
And luminous tube;Electronic device is focused primarily on using AlGaN/GaN HEMTs (HEMT) structure and is used as GaN
The basis representative of base device, this structure has good high frequency, high power, high temperature resistant and radiation resistance, with this structure
The device developed includes AlGaN/GaN HFETs (AlGaN/GaN HFETS) and AlGaN/GaN
Heterojunction schottky diode etc..
In terms of applied power electronics, launched field in 1999 since Infineon companies and end IGBT, it is next several
Year, each main production IGBT company all releases one after another similar product.From that time, IGBT is obtained on electric property
Qualitative leap, quickly grow and dominated the market of medium power range.With the development of power device IGBT technologies,
IGBT switching speed is more and more faster, in application system, there is the IGBT of high-speed switch to need to ask using quick two pole
Pipe is as fly-wheel diode.For switching device IGBT each time from opening into turn off process, fly-wheel diode can be by conducting state
It is changed into cut-off state.And this crosses range request diode has fast soft recovery characteristics.In application process, it is desirable to system
Small power consumption, the high and less electromagnetic noise of reliability, this all has high requirements to IGBT and FRD, however, at very long one section
Between in, industry ignores the exploitation of fast diode because FRD performance does not catch up with, turn into limitation whole system effect
The right IGBT of Neng , Although performance is fine, can not also bring into play, and the effect of recent fast diode receives the attention of height.
Fast recovery diode（Abbreviation FRD）, it is mainly used in Switching Power Supply, PWM pulse width modulators, uninterrupted power source（UPS）, alternating current
In the electronic circuits such as motivation variable-frequency governor.As high frequency, the fly-wheel diode of high current, high-frequency rectification diode or damping two
Pole pipe uses, and is extremely promising electric power, electronic semiconductor components.The internal structure of fast recovery diode and common PN
Junction diode is different, and it belongs to pin junction diodes, i.e., base i is added among P-type silicon material and N-type silicon materials, forms
Pin structures.The thickness and doping concentration of base determine FRD breakdown reverse voltage value（Pressure voltage）.
Fast recovery diode main technology and performance（That is electrical parameter）Have（1）Breakdown voltage,（2）Forward voltage drop and
（3）Open turn-off characteristic etc..Fast recovery diode is a kind of ambipolar device
In general, the forward voltage drop of bipolar devices is conflicting with reverse recovery characteristic to improve positive pressure
Drop will injure reverse recovery characteristic, such as add the hole-electron pair density of n- extension layers, and forward voltage drop can improve, but
More electric charges having been stored when can make shut-off, the increase of maximum reverse restoring current and reverse recovery time are elongated, so that shut-off work(
Consumption increase.
Best fast diode is Schottky diode, and this is a kind of single charge carrier device, not few son storage effect,
But Schottky diode is done with silicon materials, can only because the critical electric field (critical field) of silicon materials is than relatively low
The ceiling voltage for making useful single-chip Schottky diode is 200V, the application for 600V and 1200V, if needing to use
Schottky diode, silicon carbide diode can only be used now, but the price of SiC schottky diode is very high, and cost performance is paid no attention to
Think, in the quite a while, price is difficult to be greatly lowered.
The technology that epitaxial layer of gallium nitride is grown on silicon single crystal is very ripe, and having commercial product now is served as a contrast with silicon single crystal
Bottom, although expensive with silicon monocrystalline substrate ratio sapphire at present, industry is believed, is done with more and more more using silicon monocrystalline substrate
The product of GaN base heterojunctions and research and development, the cost of the epitaxial layer prepared with silicon monocrystalline substrate can more and more put down preferably with quality meeting
It is better and better, should be most to have commercial use in the future.
The structure of the current commercial epitaxial layer silicon nitride being grown on silicon single crystal, epitaxial layer on single crystal surfaces
Order is the AlN of the nanometer thickness of a number of plies one hundred, one layer of about a few micrometers of thick AlGaN, the thick GaN of a number of plies micron, followed by
The buffer nitride layer silicon of one hundred nanometer of number, the AlGaN of about 25 nanometer thickness is followed by, Two-dimensional electron is formed between AlGaN and GaN
Thin, the device that this structure has been used to develop includes the horizontal effect transistor of AlGaN/GaN hetero-junctions
(AlGaN/GaN HFETS) and AlGaN/GaN hetero-junctions lateral direction schottky diodes etc..
Gallium nitride is a kind of broadband semiconductor, and Schottky barrier is higher, and this can cause the positive guide of Schottky diode
Logical pressure drop ratio is higher, thus turns on power consumption increase, reduces the whole efficiency for turning energy system.In order to reduce conduction voltage drop, meeting again
Make reverse bias leakage increase, the manufacture to Schottky diode brings very big difficulty.
The content of the invention
In order to solve the shortcomings of the prior art, the present invention provides a kind of gallium nitride based schottky diode semiconductor device
Part and manufacture method, it is made up of two kinds of different Schottky Barrier Contacts, one of which Schottky barrier is than another Schottky
Potential barrier is low, and under identical contact area, low barrier schottky contact contacts than high barrier schottky, can be noted under low conducting voltage
Enter more electric currents, during reverse bias, low barrier schottky contact can bear sizable reverse bias and remain to keep relatively low
Reverse leakage current, total reverse leakage current can be controlled in fairly small scope.
To achieve these goals, gallium nitride based schottky diode method, semi-conductor device manufacturing method of the invention, including
Following steps：
1）Sequentially formed in silicon monocrystalline substrate AlN layers, adulterate Fe ions AlGaN layer, adulterate carbon ion GaN epitaxial layer,
Undoped GaN epitaxial layer, undoped AlGaN epitaxial layers, and GaN cap；
2）The first contact hole mask perforate is formed, and cathodic metal is formed in the first contact hole mask perforate；
3）Form the first schottky junctions contact hole, form the first schottky metal in the first schottky junctions contact hole, and with GaN surfaces
Form low barrier schottky contact；
4）Form the second schottky junctions contact hole, form the second schottky metal in the second schottky junctions contact hole, and with GaN surfaces
Form high barrier schottky contact；
5）Form positive the plate bed course and cathodic metal bed course of Schottky diode.
Further, step 1) the AlN thickness degree is 300 nanometers, and the AlGaN layer thickness of doping Fe ions is 2 microns,
The GaN epitaxial layer thickness for adulterating carbon ion is 2 microns, and undoped GaN epitaxial layer thickness is 0.3 micron, undoped AlGaN
Epitaxy layer thickness is 25 nanometers, and GaN cap thickness is 25 angstroms.
Further, the step 2) further comprises the steps：In GaN cap surface accumulation lithography coating, utilize
First aperture mask version and lithography step, the surface of part GaN cap is exposed, so as to form the first contact hole mask perforate；
Metal level is evaporated to by the surface by electron beam evaporation；Using stripping technology, left in the first contact hole mask perforate
Metal is as cathodic metal；The annealed processing in nitrogen environment.
Further, the metal level is is made up of Ti, Al, Ni and Ag, or is made up of Ti, Ni and Ag, or by Ti, Al,
Ni and Au compositions.
Further, the aperture widths of the first aperture mask version are 1um to 100um, and pitch of holes is 1um to 50um；
Hole shape is square, circular or rectangle.
Further, the step 3) further comprises the steps：In GaN surfaces accumulation lithography coating, second is utilized
Aperture mask version forms the first schottky junctions contact hole on the surface for exposing part GaN；By electron beam evaporation by metal steam
It is sent to the second contact hole mask perforate and lithography coating surface；Using stripping technology in the first schottky junctions contact hole
Metal is left as the first schottky metal；In nitrogen environment through between 500 DEG C to 850 DEG C, 30sec is between 60sec
Short annealing is handled, and the first schottky metal forms low barrier schottky with GaN surfaces and contacted.
Further, the aperture widths of the second aperture mask version are 1um to 10um, and pitch of holes is 1um to 3um；Open
Hole shape is square, circular or rectangle.
Further, first schottky metal is silver, titanium or aluminium.
Further, the step 4) further comprises the steps：In GaN surfaces accumulation lithography coating, Xiao Te is utilized
Base aperture mask version exposes part GaN surface and forms Schottky perforate；By electron beam evaporation by W metal layer and gold
Category Al layers are evaporated to Schottky perforate and lithography coating surface；Metal is left as in Schottky perforate by the use of stripping technology
Two schottky metals；The annealing through 500 DEG C, 30sec in nitrogen environment, makes the second schottky metal and GaN surfaces shape
Contacted into high barrier schottky.
Further, the aperture widths of the Schottky aperture mask version are 1um to 100um, pitch of holes be 1um extremely
10um, hole shape is square, circular or rectangle.
Further, the thickness of the W metal layer is 50nm to 200nm；The thickness of the metal Al layer be 0.5um extremely
2.0um。
Further, the step 5) further comprises the steps：SiClx nitrogen layer, boro-phosphorus glass are sequentially depositing on surface
Layer, form inter-level dielectric；In the inter-level dielectric surface accumulation lithography coating, formed using contact hole mask in inter-level dielectric
Electrode；In the electrode bottom and inter-level dielectric upper surface deposition aluminium alloy layer；Gold is carried out by metal mask
Belong to etch, form positive the sheetmetal bed course and cathodic metal bed course of Schottky diode.
Further, the silicon nitride layer thickness is 0.1um to 0.5um；The boron-phosphorous glass layer thickness be 0.1um extremely
0.8um；The aluminium alloy layer thickness is 1.0um to 10um.
To achieve these goals, gallium nitride based schottky diode semiconductor devices of the invention, including, anode metal
Bed course and cathodic metal bed course, it is characterised in that the cathodic metal bed course forms Ohmic contact with semiconductor；The anode gold
Belong to bed course and form Schottky contacts with semiconductor.
Further, the Schottky contacts, including the Schottky contacts of the contact of low barrier schottky and high potential barrier.
Further, area of the periphery of low barrier contact perforate more than 50% contacts formed with high barrier schottky.
Further, low barrier schottky contact is the 10% to 70% of anode aperture area.
Further, gallium nitride based schottky diode semiconductor devices is lateral type Schottky diode structure or indulged
To type Schottky diode structure.
It is disclosed heterogeneous for the AlGaN/GaN that is produced on epitaxial layer of gallium nitride/silicon crystal substrate material
Junction Schottky diode, the shortcomings that its structure can avoid the Schottky contacts of the above from adding the structure of Ohmic contact, base used
This device architecture is the Schottky diode formed by more than one Schottky contacts, and structure of the invention is by two kinds of different Xiao
Special base barrier contact composition, then the Schottky barrier of one of which is lower than another Schottky barrier.
The operation principle of the present invention is in forward conduction, and under identical contact area, low barrier schottky contact is than high gesture
More electric currents can be injected by building Schottky contacts (such as 0.8V is between 1.5V) under low conducting voltage, can be as requested
Conduction voltage drop selects the ratio of appropriate low high barrier contact area, and during reverse bias, low barrier schottky contact can bear
Sizable reverse bias and remain to keep relatively low reverse leakage current, the reverse bias for having high barrier schottky plus adjacency exhausts
Area is protected, and total reverse leakage current can be controlled in fairly small scope.
Low barrier schottky contact is usually to be added and suitably moved back by low workfunction metal (such as aluminium, silver, titanium and molybdenum etc.)
Fiery condition is come what is formed, and high barrier schottky contact is then with the high metal (such as platinum, nickel and Palladium etc.) of work function plus suitable
Annealing conditions are formed.In Schottky electrode tapping, first place low barrier contact metal or high barrier contact metal then exists
Its annealing temperature, the metal for needing higher anneal temperature is usually first placed, if the annealing temperature of low barrier metal is higher than
The annealing temperature of high barrier metal, that is just first placed high barrier schottky gold category And and completes annealing steps, just places Gao Xiao afterwards
Special base barrier metal, then carries out its annealing steps, because annealing temperature at this moment is low than the annealing temperature of low barrier metal,
So just do not interfered with during high barrier metal annealing the characteristic of another low barrier schottky contact, vice versa.
Good Schottky contacts are prepared, the surface of semiconductor must avoid producing too many surface on surface as far as possible
State and defect, otherwise Schottky pinning-in effect (Schottky pinning effect) metal and semiconductor can have been dominated
Contact berrier, barrier height is set to be determined by the neutral filling position of surface state, the work function with contacting metal is without more Important Relations.
Further, the surface of semiconductor will try one's best no oxide layer, and to try one's best no carbon or carbon-containing impurities stay in surface.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
Obtain it is clear that or being understood by implementing the present invention.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and a part for constitution instruction, the reality with the present invention
Apply example together, for explaining the present invention, be not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the gallium nitride based schottky diode method, semi-conductor device manufacturing method flow chart according to the present invention；
Fig. 2 is to be illustrated according to the cross-sectional structure of each epitaxial layer of gallium nitride based schottky diode semiconductor devices of the present invention
Figure；
Fig. 3 is the schematic diagram behind the formation cathode contacts hole of surface according to the present invention；
Fig. 4 is the schematic diagram after surface formation cathodic metal electrode according to the present invention；
Fig. 5 is the schematic diagram after the first schottky junctions contact hole of surface formation according to the present invention；
Fig. 6 is the schematic diagram after the first schottky metal of surface formation according to the present invention；
Fig. 7 is the schematic diagram after the second schottky junctions contact hole of surface formation according to the present invention；
Fig. 8 is the schematic diagram after the second schottky metal of surface formation according to the present invention；
Fig. 9 is the schematic diagram formed in the inter-level dielectric of surface after contacting perforate according to the present invention；
Figure 10 is to form the schematic diagram of the metal pedestal layer of negative electrode and anode on surface according to the present invention；
Figure 11 is the longitudinal type gallium nitride based schottky diode semiconductor devices cross-sectional view according to the present invention；
Figure 12 is to contact aperture pattern top view according to the low barrier schottky of the present invention.
Specific implementation method
The preferred embodiments of the present invention are illustrated below in conjunction with accompanying drawing, it will be appreciated that preferred embodiment described herein
It is merely to illustrate and explain the present invention, is not intended to limit the present invention.
Fig. 1 is according to the gallium nitride based schottky diode method, semi-conductor device manufacturing method flow chart of the present invention, below will
With reference to figure 1, the gallium nitride based schottky diode method, semi-conductor device manufacturing method of the present invention is described in detail.
First, in step 101, AlN layers, the AlGaN layer for adulterating Fe ions, doping carbon ion successively in silicon monocrystalline substrate
GaN epitaxial layer, undoped GaN epitaxial layer, undoped AlGaN epitaxial layers, and cap layers of GaN epitaxial layer.Fig. 2 is
According to the cross-sectional structure schematic diagram of each epitaxial layer of gallium nitride based schottky diode semiconductor devices of the present invention, such as Fig. 2 institutes
Show, gallium nitride based schottky diode semiconductor devices of the invention, in silicon monocrystalline substrate（Silicon substrates）On grow successively
One layer about 300 nanometers of AlN（AlN layers）, the AlGaN of one layer about 2.0 microns thick of doping Fe ions（AlGaN F-Doped
Layer）, the epitaxial layer of gallium nitride of one layer about 2.0 microns thick of doping carbon ion（GaN C-Doped layers）, one layer of about 0.3 micron of thickness
Undoped epitaxial layer of gallium nitride（GaN layer）, the undoped AlGaN epitaxial layers of one layer of about 25nm thickness（AlGaN layer）, finally
In about 25 angstroms of superficial growth a layer thickness（Å；Å）Epitaxial layer of gallium nitride cap layers（GaN cap）.
In step 102, in GaN cap surface accumulation lithography coating, the first contact hole is formed using the first aperture mask version
Mask perforate（Cathode contacts hole）.Fig. 3 is the schematic diagram behind the formation cathode contacts hole of surface according to the present invention, such as Fig. 3 institutes
Show, in GaN cap surface accumulation lithography coating, using the first aperture mask version and corresponding lithography step, expose part
The surface of GaN cap, so as to form the first contact hole mask perforate, the perforate size width of the first aperture mask version for 1um extremely
The distance between 100um, Kong Yukong are 1um to 50um, and hole shape can be various geometrical patterns such as square, circular and length
It is square etc..
In step 103, electrode metal is formed in the first contact hole mask perforate as cathodic metal.In this step,
The metal level of the compositions such as Ti/Al/Ni/Ag or Ti/Ni/Ag or Ti/Al/Ni/Au is evaporated to by surface by electron beam evaporation,
Then unwanted metal is removed using stripping technology, only leaves metal as negative electrode in the first contact hole mask perforate
Metal, the then annealing through 850 DEG C, 60sec in nitrogen environment.Fig. 4 is to form negative electrode on surface according to the present invention
Schematic diagram after metal electrode, as shown in figure 4, by the step process, remove lithography coating, only stayed on the surface of GaN cap
Lower cathodic metal electrode.
In step 104, the first schottky junctions of part GaN cap surface formation are being exposed using the second aperture mask version
Contact hole（Low barrier schottky contacts perforate）.In this step, first in GaN cap surface accumulation lithography coating and corresponding light
Step is carved, the first schottky junctions contact hole, the second perforate are formed on the surface for exposing part GaN using the second aperture mask version
The perforate size width of mask is that 1um to the distance between 10um, Kong Yukong is 1um to 3um, and hole shape can be various several
What pattern such as square, circular and rectangle.Fig. 5 is after forming the first schottky junctions contact hole on surface according to the present invention
Schematic diagram, as shown in figure 5, in the left side on GaN cap surface formed with the first schottky junctions contact hole.
In step 105, evaporated metal forms low barrier schottky with GaN surfaces and contacted in the first schottky junctions contact hole.
In this step, by the relatively low metal of one layer of work function of electron beam evaporation such as silver or titanium or aluminium, thickness about 0.1um is extremely
2.0um, the first schottky junctions contact hole and lithography coating surface are evaporated to, then unwanted metal is gone using stripping technology
Fall, only metal is left in the first schottky junctions contact hole, as the first Schottky contact metal（Low barrier schottky contact gold
Category）；Then in nitrogen environment through 500 DEG C between 850C, 30sec between 60sec short annealing handle, make first
The first schottky metal in schottky junctions contact hole（Low barrier schottky contacting metal）Low potential barrier Xiao is formed with GaN cap surface
Te Ji is contacted.Fig. 6 is the schematic diagram after the first schottky metal of surface formation according to the present invention, as shown in fig. 6, in GaN
The left side on cap layers surface is formed with the first schottky metal.
In step 106, expose part GaN cap surface using Schottky aperture mask version and form the second Schottky contacts
Hole.In this step, Schottky aperture mask version is utilized in GaN surfaces accumulation lithography coating and corresponding lithography step first
Expose part GaN surface and form the second schottky junctions contact hole, the perforate size width of Schottky aperture mask version is 1um
To 100um, the distance between Kong Yukong is 1um to 10um, hole shape can be various geometrical patterns as square, it is circular and
Rectangle etc..Fig. 7 is the schematic diagram after the second schottky junctions contact hole of surface formation according to the present invention, as shown in fig. 7, by
Lithography step, the surface that part GaN is exposed in left side form the second schottky junctions contact hole.
In step 107, metal is left in the second schottky junctions contact hole by electron beam evaporation and is used as the second Schottky gold
Category（High barrier schottky contacting metal）.In this step, by electron beam evaporation double layer of metal Ni, (thickness about 50nm is extremely
200nm) and Al (thickness about 0.5um to 2.0um) composition metal level be evaporated to the second schottky junctions contact hole and photoetching
Coating surface, then unwanted metal is removed using stripping technology, metal work is only left in the second schottky junctions contact hole
For the schottky metal of Schottky electrode metal second（High barrier schottky contacting metal）, then through 500 in nitrogen environment
DEG C, 30sec annealing, make the second schottky metal in the second schottky junctions contact hole（High barrier schottky contacting metal）
High barrier schottky is formed with GaN surfaces to contact.Fig. 8 is the showing after the second schottky metal of surface formation according to the present invention
Be intended to, as shown in figure 8, the schottky metal of left side first and GaN surfaces formed with the second schottky metal and with GaN cap table
Face forms high barrier schottky contact.
In step 108, contact perforate is formed in the inter-level dielectric of surface.In this step, first, in epitaxial layer most surface
It is upper first deposit one layer of silicon nitride (thickness is about 0.1um to 0.5um), then, deposition boro-phosphorus glass (thickness be about 0.1um extremely
0.8um), inter-level dielectric is formed；In inter-level dielectric surface accumulation lithography coating, part metals are exposed using contact hole mask
Layer, then removes lithography coating, electrode is formed in inter-level dielectric（Contact perforate）.Fig. 9 is in table according to the present invention
The schematic diagram formed in the inter-level dielectric of face after contact perforate, as shown in figure 9, in cathodic metal and high barrier schottky contacting metal
On, and electrode is formed in inter-level dielectric（Contact perforate）.
In step 109, cathodic metal bed course and anode metal bed course are formed on surface.In electrode bottom and interlayer
Medium upper surface deposits one layer of aluminium alloy (thickness is about 1.0um to 10um), then enters row metal etch by metal mask,
Form the anode metal bed course and cathodic metal bed course of Schottky diode.Figure 10 is to form negative electrode on surface according to the present invention
With the schematic diagram of the metal pedestal layer of anode, as shown in Figure 10, cathodic metal bed course is formed in cathodic metal and part inter-level dielectric
On, anode metal bed course is formed on high barrier schottky contacting metal.
Figure 11 is according to the longitudinal type gallium nitride based schottky diode semiconductor devices cross-sectional view of the present invention, is such as schemed
Shown in 11, longitudinal type gallium nitride based schottky diode semiconductor devices of the invention, cathodic metal bed course is formed with semiconductor
Ohmic contact；The anode metal bed course forms Schottky contacts with semiconductor, and its Schottky contacts is by more than one Schottky
Metal contacts to be formed, and when there is the Schottky contacts of two kinds of different potential barriers, one kind is low barrier schottky contact, and another kind is phase
To the Schottky contacts of higher barrier.
Figure 12 is to contact aperture pattern top view according to the low barrier schottky of the present invention, as shown in figure 12, of the invention
Contact perforate (i.e. contact area) the size width of low barrier schottky contact is 0.5um between 10um, hole (i.e. contact surface
Product) with the distance between hole (i.e. contact area) it is 1um to 10um, perforate (i.e. contact area) shape can be various geometric graphs
Case such as square, circular and rectangle, a minimum of semi-area in periphery of low barrier contact perforate is by high barrier schottky
Contact round.
Metal used in low barrier schottky contact is usually to be added with the low metal of work function (such as aluminium, silver, titanium and molybdenum etc.)
Suitable annealing conditions are formed.
Metal used in the Schottky contacts of high potential barrier is usually to be added with the high metal (such as platinum, nickel and Palladium etc.) of work function
Suitable annealing conditions are formed.
Metal at anode, first placing needs the Jin Shu And of higher anneal temperature to complete annealing steps, and place again needs afterwards
Will be compared with the metal of low temperature thermal oxidation.
The periphery at least half of low barrier contact perforate be by high barrier schottky contact round, low barrier schottky
Contact as the 10% to 70% of anode aperture area.
Finally it should be noted that：The preferred embodiments of the present invention are these are only, are not intended to limit the invention, this hair
The bright transversary and vertical stratification that can be used for being related to manufacture gallium nitride base, breakdown voltage by 30V to 15000V Xiao Te
The semiconductor power discrete device of based diode, the present invention also can be used for P-type device, although being carried out with reference to embodiment to the present invention
Detailed description, for those skilled in the art, it still can be to the technical scheme described in previous embodiment
Modify, or equivalent substitution is carried out to which part technical characteristic, but within the spirit and principles of the invention, institute
Any modification, equivalent substitution and improvements of work etc., should be included in the scope of the protection.
Claims (18)
1. a kind of manufacture method of gallium nitride based schottky diode semiconductor devices, comprises the following steps：
1）Sequentially formed in silicon monocrystalline substrate AlN layers, adulterate Fe ions AlGaN layer, adulterate carbon ion GaN epitaxial layer,
Undoped GaN epitaxial layer, undoped AlGaN epitaxial layers, and GaN cap；
2）The first contact hole mask perforate is formed, and cathodic metal is formed in the first contact hole mask perforate；
3）Form the first schottky junctions contact hole, form the first schottky metal in the first schottky junctions contact hole, and with GaN surfaces
Form low barrier schottky contact；
4）Form the second schottky junctions contact hole, form the second schottky metal in the second schottky junctions contact hole, and with GaN surfaces
Form high barrier schottky contact；
5）Form positive the plate bed course and cathodic metal bed course of Schottky diode.
2. manufacture method according to claim 1, it is characterised in that step 1) the AlN thickness degree is 300 nanometers, is mixed
The AlGaN layer thickness of miscellaneous Fe ions is 2 microns, and the GaN epitaxial layer thickness for adulterating carbon ion is 2 microns, undoped GaN epitaxy
Thickness degree is 0.3 micron, and undoped AlGaN epitaxy layer thickness is 25 nanometers, and GaN cap thickness is 25 angstroms.
3. manufacture method according to claim 1, it is characterised in that the step 2) further comprises the steps：
GaN cap surface accumulation lithography coating, using the first aperture mask version and lithography step, expose the table of part GaN cap
Face, so as to form the first contact hole mask perforate；Metal level is evaporated to by the surface by electron beam evaporation；Using peeling off work
Skill, metal is left as cathodic metal in the first contact hole mask perforate；The annealed processing in nitrogen environment.
4. manufacture method according to claim 3, it is characterised in that the metal level is to be made up of Ti, Al, Ni and Ag,
Or be made up of Ti, Ni and Ag, or be made up of Ti, Al, Ni and Au.
5. manufacture method according to claim 3, it is characterised in that the aperture widths of the first aperture mask version are
1um to 100um, pitch of holes are 1um to 50um；Hole shape is square, circular or rectangle.
6. manufacture method according to claim 1, it is characterised in that the step 3) further comprises the steps：
GaN surfaces accumulation lithography coating, the first schottky junctions are formed on the surface for exposing part GaN using the second aperture mask version
Contact hole；By electron beam evaporation by evaporation of metal to the second contact hole mask perforate and lithography coating surface；Utilize stripping
Technique leaves metal as the first schottky metal in the first schottky junctions contact hole；In nitrogen environment through 500 DEG C extremely
Between 850 DEG C, 30sec to the short annealing processing between 60sec, the first schottky metal and GaN surfaces form low potential barrier Xiao
Te Ji is contacted.
7. manufacture method according to claim 6, it is characterised in that the aperture widths of the second aperture mask version are
1um to 10um, pitch of holes are 1um to 3um；Hole shape is square, circular or rectangle.
8. manufacture method according to claim 6, it is characterised in that first schottky metal is silver, titanium or aluminium.
9. manufacture method according to claim 1, it is characterised in that the step 4) further comprises the steps：
GaN surfaces accumulation lithography coating, expose part GaN surface using Schottky aperture mask version and form Schottky perforate；
W metal layer and metal Al layer are evaporated to by Schottky perforate and lithography coating surface by electron beam evaporation；Utilize stripping technology
Metal is left in Schottky perforate as the second schottky metal；In nitrogen environment through 500 DEG C, 30sec annealing at
Reason, makes the second schottky metal form high barrier schottky with GaN surfaces and contacts.
10. manufacture method according to claim 9, it is characterised in that the aperture widths of the Schottky aperture mask version
For 1um to 100um, pitch of holes is 1um to 10um, and hole shape is square, circular or rectangle.
11. manufacture method according to claim 9, it is characterised in that the thickness of the W metal layer be 50nm extremely
200nm；The thickness of the metal Al layer is 0.5um to 2.0um.
12. manufacture method according to claim 1, it is characterised in that the step 5) further comprises the steps：
Surface is sequentially depositing SiClx nitrogen layer, boron-phosphorous glass layer, forms inter-level dielectric；In the inter-level dielectric surface accumulation lithography coating,
Electrode is formed in inter-level dielectric using contact hole mask；Sunk in the electrode bottom and inter-level dielectric upper surface
Product aluminium alloy layer；Row metal etch is entered by metal mask, forms positive the sheetmetal bed course and cathodic metal of Schottky diode
Bed course.
13. manufacture method according to claim 12, it is characterised in that the silicon nitride layer thickness be 0.1um extremely
0.5um；The boron-phosphorous glass layer thickness is 0.1um to 0.8um；The aluminium alloy layer thickness is 1.0um to 10um.
14. a kind of gallium nitride based schottky diode semiconductor devices, including, anode metal bed course and cathodic metal bed course, its
It is characterised by, the cathodic metal bed course forms Ohmic contact with semiconductor；The anode metal bed course forms Xiao with semiconductor
Te Ji is contacted.
15. gallium nitride based schottky diode semiconductor devices according to claim 14, it is characterised in that the Xiao Te
Base contacts, including the Schottky contacts of the contact of low barrier schottky and high potential barrier.
16. gallium nitride based schottky diode semiconductor devices according to claim 14, it is characterised in that low potential barrier connects
Area of the periphery more than 50% for touching perforate contacts formed with high barrier schottky.
17. gallium nitride based schottky diode semiconductor devices according to claim 14, it is characterised in that low potential barrier Xiao
Te Ji contacts are the 10% to 70% of anode aperture area.
18. the gallium nitride based schottky diode that a kind of manufacture method using described in claim any one of 1-13 manufactures partly is led
Body device, it is characterised in that gallium nitride based schottky diode semiconductor devices is lateral type Schottky diode structure or indulged
To type Schottky diode structure.
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| CN109037322A (en) * | 2018-07-16 | 2018-12-18 | 东南大学 | A kind of GaN base insulated gate bipolar transistor and its processing method |
| CN109817586A (en) * | 2018-12-25 | 2019-05-28 | 厦门市三安集成电路有限公司 | The method and metal contact structure of the contact of power device metal are protected when high annealing |
| CN110364574A (en) * | 2019-06-05 | 2019-10-22 | 西安电子科技大学 | AlGaN/GaN heterojunction schottky diode device based on P-GaN cap layers and floating becket |
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| CN110521005A (en) * | 2018-12-28 | 2019-11-29 | 香港应用科技研究院有限公司 | High pressure carbonization silicon Schotty diode flip chip array |
| CN111211176A (en) * | 2020-01-14 | 2020-05-29 | 香港商莫斯飞特半导体有限公司 | Gallium nitride-based heterojunction integrated device structure and manufacturing method |
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| CN109037322A (en) * | 2018-07-16 | 2018-12-18 | 东南大学 | A kind of GaN base insulated gate bipolar transistor and its processing method |
| CN109037322B (en) * | 2018-07-16 | 2021-06-11 | 东南大学 | GaN-based insulated gate bipolar transistor and processing method thereof |
| CN109817586A (en) * | 2018-12-25 | 2019-05-28 | 厦门市三安集成电路有限公司 | The method and metal contact structure of the contact of power device metal are protected when high annealing |
| CN110521005A (en) * | 2018-12-28 | 2019-11-29 | 香港应用科技研究院有限公司 | High pressure carbonization silicon Schotty diode flip chip array |
| CN110521005B (en) * | 2018-12-28 | 2022-03-18 | 香港应用科技研究院有限公司 | Silicon carbide Schottky diode and manufacturing method thereof |
| CN110364574A (en) * | 2019-06-05 | 2019-10-22 | 西安电子科技大学 | AlGaN/GaN heterojunction schottky diode device based on P-GaN cap layers and floating becket |
| CN110473915A (en) * | 2019-09-18 | 2019-11-19 | 深圳爱仕特科技有限公司 | A kind of preparation method for the SiC-MOS device integrating low potential barrier JBS |
| CN111211176A (en) * | 2020-01-14 | 2020-05-29 | 香港商莫斯飞特半导体有限公司 | Gallium nitride-based heterojunction integrated device structure and manufacturing method |
| CN111211176B (en) * | 2020-01-14 | 2023-06-02 | 香港商莫斯飞特半导体有限公司 | Gallium nitride-based heterojunction integrated device structure and manufacturing method |
| CN114141884A (en) * | 2021-12-14 | 2022-03-04 | 上海集成电路制造创新中心有限公司 | Reconfigurable schottky diode |
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