CN114023808A - AlGaN/GaN heterojunction multi-channel power diode with P-type terminal and manufacturing method - Google Patents

AlGaN/GaN heterojunction multi-channel power diode with P-type terminal and manufacturing method Download PDF

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CN114023808A
CN114023808A CN202111297683.8A CN202111297683A CN114023808A CN 114023808 A CN114023808 A CN 114023808A CN 202111297683 A CN202111297683 A CN 202111297683A CN 114023808 A CN114023808 A CN 114023808A
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周弘
刘亦琛
苏春旭
张进成
刘志宏
郝跃
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Xidian University
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Abstract

The invention discloses an AlGaN/GaN heterojunction multi-channel power diode with a P-type terminal, which mainly solves the problems of low breakdown voltage and low on-state current density. The multi-channel GaN-based LED chip comprises a substrate, a buffer layer, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer, a multi-channel layer, a GaN cap layer and a passivation layer from bottom to top, wherein cathodes are arranged on two sides of the multi-channel layer and the GaN cap layer, a circular groove-shaped anode is arranged in the middle of the multi-channel layer, the upper end of the anode is overlapped with the upper surface of a notch in the horizontal direction, an annular P-type terminal is arranged between the upper part of the GaN cap layer and the horizontal part of the upper end of the anode, the multi-channel layer comprises n groups of channels, and each group consists of an upper AlGaN barrier layer, an AlN insert layer and a lower GaN channel layer. The invention can relieve the electric field concentration phenomenon near the anode, improve the breakdown voltage, strengthen the limitation of the channel to electrons, improve the current density, obtain better power characteristics and be used as a core device of a power system.

Description

AlGaN/GaN heterojunction multi-channel power diode with P-type terminal and manufacturing method
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to an AlGaN/GaN heterojunction multi-channel power diode with a P-type terminal, which can be used as a core device of a power system.
Background
The core part of the power system is a power electronic device, the applicability of the power electronic device in more complex occasions and more severe environments is improved, and the power electronic device is the mainstream development trend in the field of power electronics. The Si material is the first generation semiconductor material, and its corresponding device is the mainstream product in the current power electronics market. With the maturity of semiconductor technology, the performance of Si devices has approached the limit of materials, and the requirements of society on electric energy conversion devices have not been met. In order to further improve the device performance, the bottleneck faced by the power electronic field at present is broken through, and new materials are required to be adopted.
GaN is a representative third generation wide bandgap semiconductor material with outstanding advantages. The saturated electron drift speed of GaN is 2 times that of Si, and the GaN material has higher electron concentration, mobility and breakdown field strength, so that a power device prepared based on the GaN material has higher current density, higher power density and higher switching speed in theory. The power characteristics of the semiconductor device are usually measured by using a Baliga optimal value, and the Baliga optimal value of the GaN material is far greater than that of the Si material, so that the GaN material has higher advantages and potentials in the aspect of manufacturing the power device and is expected to be a substitute of silicon.
Devices based on AlGaN/GaN heterojunction structures have been extensively studied in recent years due to their high density, high mobility, two-dimensional electron gas, and some of the results have begun to be applied to the market. The GaN-based device has a sapphire substrate, a SiC substrate, a Si substrate, and a free-standing substrate on a selection of substrates. From the perspective of manufacturing cost, gallium nitride on a silicon substrate has a larger wafer size, and the device is manufactured more efficiently and at a lower cost. In addition, the gallium nitride device on the silicon substrate has better compatibility with other mature Si-based devices, and the manufacturing cost is expected to be further reduced. Therefore, silicon-based gallium nitride devices have better prospects and wider applicability in substrate selection.
The existing horizontal single-channel AlGaN/GaN heterojunction Schottky barrier diode comprises a substrate, a buffer layer, a GaN channel layer, an AlGaN barrier layer and an anode from bottom to top as shown in figure 1, wherein two sides of the AlGaN layer on the GaN layer are cathodes, and the AlGaN and the GaN layer form a heterojunction structure. The device combines the polarization characteristic of III-V nitride materials, introduces an AlGaN/GaN heterojunction structure on the basis of the traditional Schottky barrier diode, utilizes a two-dimensional electron gas conducting channel, improves the electron mobility, has the characteristics of higher breakdown voltage, lower opening resistance and shorter reverse recovery time compared with similar silicon devices, is easy to realize higher current density and power density, and can greatly improve the electric energy conversion efficiency of a system and reduce the preparation cost when being applied to power conversion. However, with the increase of application requirements, the conventional single-channel heterojunction lateral diode has a limited output current density and low breakdown voltage due to the adoption of a single-channel structure, and cannot meet the requirement of kilovolt breakdown ultrahigh voltage on power electronic equipment.
As shown in fig. 2, the conventional AlGaN/GaN heterojunction multi-channel power diode includes, from bottom to top, a substrate, a buffer layer, a multi-channel layer, and a GaN cap layer. The multi-channel layer is composed of a plurality of groups of channels from bottom to top, and the single-group channel is composed of a GaN channel layer and an AlGaN barrier layer from bottom to top. And the GaN layer of the first layer of channel is provided with an annular cathode and an anode upwards to two sides of the GaN cap layer, and the region of the upper part of the GaN cap layer connected with the cathode and the anode is provided with a passivation layer. On the basis of an AlGaN/GaN heterojunction single-channel power diode, a single channel of the device is expanded into a multi-channel structure, namely the current density and the tolerable voltage output by the device are improved. However, under the condition of a large reverse bias voltage, an electric field concentration phenomenon occurs at the contact schottky interface of the anode metal and the semiconductor, an electric field peak is generated, and the device is broken down in advance. Meanwhile, electrons in the device channel layer may cross the AlGaN layer conduction band barrier to reduce the current density of the device, so that the on-resistance is increased.
Disclosure of Invention
The invention aims to provide an AlGaN/GaN heterojunction multi-channel power diode with a P-type terminal and a manufacturing method thereof aiming at the defects of the prior device technology, so as to improve the phenomenon of anode metal electric field concentration, improve breakdown withstand voltage under the condition of larger reverse bias, promote conduction band barrier of an AlGaN layer, reduce the forward on-resistance of the device, further increase output current density and meet the requirement of higher voltage application.
The technical scheme of the invention is realized as follows:
1. the utility model provides a take AlGaN/GaN heterojunction multichannel power diode of P type terminal, it includes substrate 1 from bottom to top, buffer layer 2, GaN channel layer 3, AlGaN barrier layer 5, the upper portion of AlGaN barrier layer 5 is multichannel layer 6 in proper order, GaN cap layer 7 and passivation layer 10, the both sides of multichannel layer 6 and GaN cap layer 7 are negative pole 11, the centre is circular slot form positive pole 9 and positive pole upper end and notch upper surface have the overlap on the horizontal direction, this multichannel layer 6 includes n group's channel, 2 is not less than n and is not more than 10, every group's channel comprises last AlGaN barrier layer 63 and lower GaN channel layer 61, its characterized in that:
an AlN insert layer 4 with the thickness of 0.5-2 nm is arranged between the GaN channel layer 3 and the AlGaN barrier layer 5 so as to increase the current density and reduce the on-resistance;
an annular P-type terminal 8 is arranged between the upper part of the GaN cap layer 7 and the horizontal part of the upper end of the anode, the terminal adopts P-GaN or P-NiO, the thickness of the terminal is 100-500 nm, the phenomenon of the peak of a Schottky contact electric field of a metal semiconductor is improved, and the breakdown voltage of a device is improved;
an AlN layer 62 with the thickness of 0.5-2 nm is arranged between the GaN channel layer 61 and the AlGaN barrier layer 63 in each group of channels of the multi-channel layer 6 so as to increase the current density and reduce the on-resistance;
the annular cathode metal 11 and the circular anode metal 9 are both in groove structures.
Further, the substrate 1 is made of Si or SiC or GaN material, and the thickness is 300-1200 mu m; the buffer layer 2 is made of GaN material and has a thickness of 0.5-10 mu m; the GaN cap layer 7 is 2E to E thick5 nm; the passivation layer 10 is made of SiN or SiO2Or Al2O3Or HfO2A single layer medium, or a double layer composite medium;
further, the thickness of the GaN channel layer 3 is 100-500 nm; the thickness of the lower GaN channel layer 61 is 20-100 nm, the thickness of the AlN layer 62 is 0.5-2 nm, and the thickness of the upper AlGaN barrier layer 63 is 10-30 nm.
2. A preparation method of a multi-channel power diode with a P-type terminal based on AlGaN/GaN heterojunction two-dimensional electron gas is characterized by comprising the following steps:
1) pretreating the surface of the substrate to remove dangling bonds, and placing the pretreated substrate in H2Carrying out heat treatment in the reaction chamber at the high temperature of 900-1000 ℃, and depositing a GaN buffer layer with the thickness of 0.5-10 mu m by adopting a metal organic compound chemical vapor deposition (MOCVD) process;
2) depositing an unintentional doped GaN channel layer with the thickness of 100-500 nm on the GaN buffer layer by adopting a metal organic compound chemical vapor deposition (MOCVD) process;
3) depositing an AlN insert layer with the thickness of 0.5-2 nm on the GaN channel layer by adopting a metal organic compound chemical vapor deposition (MOCVD) process;
4) depositing an AlGaN barrier layer with the thickness of 15-30 nm on the AlN insert layer by adopting a metal organic compound chemical vapor deposition (MOCVD) process;
5) continuously and sequentially depositing a lower GaN channel layer with the thickness of 20-100 nm, an AlN layer with the thickness of 0.5-2 nm and an upper AlGaN barrier layer with the thickness of 10-30 nm on the AlGaN barrier layer by adopting a metal organic compound chemical vapor deposition (MOCVD) process; continuously accumulating the three-layer structure to form a multi-channel layer;
6) growing a GaN cap layer on the top AlGaN barrier layer of the multi-channel region by adopting a metal organic compound chemical vapor deposition (MOCVD) process, wherein the thickness of the GaN cap layer is 2-5 nm;
7) manufacturing an annular region mask above the GaN cap layer, and etching by adopting Reactive Ion Etching (RIE) or Inductively Coupled Plasma (ICP) technology, wherein the depth of an etched groove is the depth from the GaN cap layer to the first GaN channel layer of the multi-channel region;
8) placing the etched sample into an electron beam evaporation table or a sputtering table, and depositing metal to form a cathode;
9) putting the sample with the deposited metal into an annealing furnace, and annealing at high temperature to form ohmic contact between the cathode metal and the contact interface;
10) manufacturing a circular area mask above the GaN cap layer, and etching by adopting Reactive Ion Etching (RIE) or Inductively Coupled Plasma (ICP) technology, wherein the depth of an etched groove is the depth from the GaN cap layer to the GaN channel layer;
11) manufacturing an annular area mask above the GaN cap layer, wherein the annular area just surrounds one circle of the circular area in the area 10), and putting the sample after the mask is manufactured into a sputtering evaporation table or inductively coupled plasma chemical vapor deposition (ICP-CVD) for growing a P-type terminal;
12) manufacturing a mask above the P-type terminal, depositing metal on the P-type terminal by adopting an evaporation or magnetron sputtering process, and annealing at high temperature to form an anode;
13) placing the epitaxial wafer subjected to the steps into a Plasma Enhanced Chemical Vapor Deposition (PECVD) reaction chamber for depositing a passivation layer;
14) and photoetching and etching are carried out on the passivation layer to form an electrode contact hole, so that the device is manufactured.
Compared with the prior art, the invention has the following advantages:
1. the invention adopts a plurality of groups of channel material structures, each group is formed by stacking an upper AlGaN barrier layer, an AlN layer and a lower GaN channel layer, and meanwhile, the AlN insert layer is added between the GaN channel layer and the AlGaN barrier layer, so that the limitation on electrons in the channel is enhanced, larger current and smaller on-resistance can be generated when the GaN channel is in forward conduction, and the GaN channel has better power merit value and better power characteristic.
2. According to the invention, the annular P-type terminal is arranged at the upper part of the GaN cap layer, so that electric field crowding in reverse direction can be effectively relieved, the electric field peak value is transferred from the Schottky interface of the gold-half contact to the inside of the P-type terminal, and the advanced breakdown of the surface of a device is effectively improved.
Drawings
FIG. 1 is a schematic diagram of a conventional lateral single-channel AlGaN/GaN heterojunction Schottky barrier diode.
Fig. 2 is a structural diagram of a conventional AlGaN/GaN heterojunction multi-channel power diode.
Fig. 3 is a structural diagram of an AlGaN/GaN heterojunction multi-channel power diode with P-type termination according to the present invention.
Fig. 4 is a process flow diagram of the present invention for fabricating the device of fig. 3.
Detailed Description
The invention is described in further detail below with reference to the figures and examples.
Referring to fig. 3, the present example is a P-type terminated AlGaN/GaN heterojunction two-dimensional electron gas-based multi-channel power diode, which includes a substrate 1, a GaN buffer layer 2, a GaN channel layer 3, an AlN insertion layer 4, an AlGaN barrier 5, a multi-channel layer 6, a GaN cap layer 7, a P-type terminal 8, an anode 9, a passivation layer 10, and a cathode 11. Wherein:
the substrate 1 is made of Si or SiC or GaN material, and the thickness is 300-1200 mu m;
the buffer layer 2 is made of GaN materials, is positioned at the upper part of the substrate 1 and has the thickness of 0.5-10 mu m;
the GaN channel layer 3 is positioned on the upper part of the buffer layer 2, and the thickness of the GaN channel layer is 100-500 nm;
the AlN insert layer 4 is positioned on the upper part of the GaN channel layer 3, and the thickness of the AlN insert layer is 0.5-2 nm;
the AlGaN barrier layer 5 is positioned on the AlN insert layer 4, and the thickness of the AlGaN barrier layer is 15-30 nm;
the multi-channel layer 6 is formed by vertically stacking n groups of channels, n is more than or equal to 1 and less than or equal to 10, the thicknesses of all layers of the same material corresponding to the channels of each group are equal, each group of channels are formed by a lower GaN channel layer 61, an AlN layer 62 and an upper AlGaN barrier layer 63 from bottom to top, wherein the thickness of the lower GaN channel layer 61 is 20-100 nm, the thickness of the AlN layer 62 is 0.5-2 nm, and the thickness of the upper AlGaN barrier layer 63 is 15-30 nm; the lower GaN channel layer 61 of the lowest group of channels of the multi-channel layer 6 is positioned on the upper part of the AlGaN barrier layer 5, and the upper AlGaN barrier layer 63 of the uppermost group of channels is positioned on the lower part of the GaN cap layer 7;
the GaN cap layer 7 is located on the upper portion of the multi-channel layer 6, and the thickness of the GaN cap layer is 2-5 nm;
the cathode 11 is located in an annular region at the periphery of the multi-channel layer 6 and the GaN cap layer 7, and the cathode metal is Ti/Al, Ti/Al/Ni/Au or Ti/Al/Mo/Au or Ti/Al/Ti/Au, wherein the thickness of the first layer of metal is 20-100 nm, the thickness of the second layer of metal is 100-300 nm, the thickness of the third layer of metal is 20-200 nm, and the thickness of the fourth layer of metal is 20-200 nm;
the anode 9 is positioned in a circular groove-shaped area on the inner side of the GaN channel layer 3, the AlN insert layer 4, the AlGaN barrier layer 5, the multi-channel layer 6 and the GaN cap layer 7, an overlapped part is formed between the anode and the horizontal upper surface of the notch, the anode metal is made of Ni/Au or Pt/Au or Pd/Au or Mo/Au or W/Au or Ni/Au/Ni and other metals, the thickness of the first layer of metal is 20-100 nm, the thickness of the second layer of metal is 50-500 nm, and the thickness of the third layer of metal is 20-500 nm;
the P-type terminal 8 is positioned between the upper part of the GaN cap layer 7 and the horizontal part of the upper end of the anode 9, and is made of NiO with P-type characteristics and GaN materials, and the thickness of the NiO is 100-500 nm;
the passivation layer 10 is positioned in the region where the upper part of the GaN cap layer 7 is connected with the cathode and the anode, and SiN or SiO is adopted2Or Al2O3Or HfO2These single layer media, or dual layer composite media.
Referring to fig. 4, the invention manufactures a multi-channel power diode with a P-type terminal based on AlGaN/GaN heterojunction two-dimensional electron gas, and three examples are given as follows:
example 1, a substrate of Si was prepared, a multi-channel layer had 2 sets of channels, a cathode metal of Ti/Al/Ni/Au was 20/140/45/55nm, an anode metal of Ni/Au was 40/120nm, and a passivation layer was prepared using a single-layer dielectric Al2O3The AlGaN/GaN multi-channel Schottky barrier diode with the P-NiO of 100nm is adopted as the P-type terminal with the wavelength of 20 nm.
Step 1, preprocessing for eliminating dangling bonds is carried out on the surface of the Si substrate.
1.1) putting a Si substrate into an HF acid solution for soaking for 30s, and then sequentially putting the Si substrate into an acetone solution, an absolute ethyl alcohol solution and deionized water for ultrasonic cleaning for 5min respectively;
1.2) blowing the cleaned Si substrate with nitrogen.
And 2, extending the buffer layer.
Putting the pretreated Si substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) system, and introducing a Ga source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm into a reaction chamber at the same time under the conditions that the pressure of the chamber is 10Torr and the temperature is 900 ℃, so as to grow a GaN buffer layer with the thickness of 5 mu m on the substrate.
And 3, manufacturing the GaN channel layer.
And continuously introducing a Ga source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm into the MOCVD system, and growing a 300 nm-thick GaN channel layer on the GaN buffer layer.
And 4, manufacturing an insertion layer.
And introducing an Al source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm into the MOCVD system, and growing an AlN insert layer with the thickness of 1nm on the GaN channel layer.
And 5, manufacturing the barrier layer.
And introducing a Ga source with the flow rate of 40 mu mol/min, an Al source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm into the MOCVD system, and growing an AlGaN barrier layer with the thickness of 20nm on the AlN insert layer.
And 6, manufacturing the multi-channel layer.
6.1) first set of channel growth
Introducing a Ga source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm into the MOCVD system, and growing a lower GaN channel layer with the thickness of 40nm on the AlGaN barrier layer;
then introducing an Al source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm, and growing an AlN layer with the thickness of 1nm on the lower GaN channel layer;
then introducing a Ga source with the flow rate of 40 mu mol/min, an Al source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm, and growing an upper AlGaN barrier layer with the thickness of 20nm on the AlN layer to finish the growth of the first group of channels;
6.2) repeating the growth process of the first group of channels, and sequentially growing a second group of lower GaN channel layer, AlN layer and upper AlGaN barrier layer on the upper AlGaN barrier layer of the first group of channels respectively, wherein the thickness parameters of the upper AlGaN barrier layer are the same as those of the first group of channels.
And 7, manufacturing the cap layer.
And introducing a Ga source with the flow rate of 40 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm into the MOCVD system, and growing a GaN cap layer with the thickness of 2nm on the multi-channel layer.
And 8, manufacturing a cathode.
8.1) etching cathode grooves:
manufacturing an annular mask on the GaN cap layer, placing the sample wafer with the manufactured mask in an ICP reaction chamber, and keeping the pressure of the reaction chamber at 8 × 10-2Pa, and charging Cl with a flow rate of 10sccm into the reaction chamber2And BCl at a flow rate of 25sccm3Keeping the radio frequency power of the ICP equipment at 150W and the direct current power at 50W, etching the sample wafer, wherein the depth of the etched groove is the depth from the GaN cap layer to the first group of lower GaN channel layers of the multi-channel layer;
8.2) putting the etched sample wafer into an electron beam evaporation table or a magnetron sputtering table, and keeping the pressure of the reaction chamber at 8.8 x 10-2Pa, depositing cathode metals Ti/Al/Ni/Au on the two sides of the multi-channel layer and the GaN cap layer by using a titanium-aluminum-nickel-gold target material with the purity of 99.999 percent, wherein the thicknesses of the cathode metals are respectively 20nm/140nm/45nm/55nm, and then annealing at the high temperature of 830 ℃ for 40s to form a cathode.
And 9, etching the anode groove.
Manufacturing a circular mask on the GaN cap layer, placing the sample wafer with the mask in an ICP reaction chamber, and keeping the pressure of the reaction chamber at 8 × 10-2Pa, and charging Cl with a flow rate of 10sccm into the reaction chamber2And BCl at a flow rate of 25sccm3And gas, keeping the radio frequency power of the ICP equipment at 150W and the direct current power at 50W, etching the sample wafer, wherein the depth of the etched groove is the depth from the GaN cap layer to the GaN channel layer.
And step 10, manufacturing the P-type terminal.
Making ring mask on GaN cap layer, the ring inner circle and the etched anode grooveCircularly superposing, applying inductively coupled plasma chemical vapor deposition (ICP-CVD) equipment, setting the pressure of a reaction chamber to be 10mTorr, the ionization voltage to be 3KV, the plasma ionization electrode to be Ni, and the gas in the reaction chamber to be O2、N2And Ar, depositing a P-type NiO film with the thickness of 100nm in the area to be deposited of the mask to form a P-type terminal.
And 11, manufacturing an anode.
After a round mask is manufactured on the P-type terminal, an electron beam evaporation table or a magnetron sputtering table is placed in the P-type terminal, and the pressure of the reaction chamber is kept at 8.8 multiplied by 10-2Pa, Ni/Au metal with a thickness of 40nm/120nm was sputtered on the unmasked P-type terminals of the mask and in the circular grooves using nickel and gold targets with a purity of 99.999%.
And step 12, manufacturing a passivation layer.
Placing the sample wafer subjected to the above steps into an ALD reaction chamber, and depositing Al with the thickness of 20nm on the surface of the sample wafer2O3And a passivation layer.
And step 13, etching the contact holes of the cathode and the anode.
And photoetching and etching the passivation layers on the anode and the cathode to form an anode contact hole and a cathode contact hole, thereby finishing the manufacture of the whole device.
Example 2 an AlGaN/GaN multi-channel schottky barrier diode was fabricated in which SiC was used as a substrate, the number of channels in the multi-channel layer was 1, the cathode metal was 20/140/45/55nm in Ti/Al/Mo/Au, the anode metal was 30/200nm in Wu/Au, the passivation layer was 200nm in single-layer dielectric SiN, and the P-type termination was 120nm in P-NiO.
Step one, preprocessing for eliminating dangling bonds is carried out on the surface of the SiC substrate.
The specific implementation of this step is the same as step 1 of example 1.
And step two, extending the buffer layer.
Putting the pretreated SiC substrate into a metal organic chemical vapor deposition MOCVD system, and introducing a Ga source with the flow rate of 60 mu mol/min, hydrogen with the flow rate of 1600sccm and ammonia with the flow rate of 5000sccm into a reaction chamber at the same time under the conditions that the pressure of the chamber is 70Torr and the temperature is 900 ℃, so as to grow a GaN buffer layer with the thickness of 6 mu m on the substrate.
And step three, manufacturing the GaN channel layer.
And continuously introducing a Ga source with the flow rate of 60 mu mol/min, hydrogen with the flow rate of 1600sccm and ammonia with the flow rate of 5000sccm into the MOCVD system, and growing a GaN channel layer with the thickness of 400nm on the GaN buffer layer.
And step four, manufacturing the insertion layer.
And then introducing an Al source with the flow rate of 60 mu mol/min, hydrogen with the flow rate of 1600sccm and ammonia with the flow rate of 5000sccm into the MOCVD system, and growing an AlN insert layer with the thickness of 0.5nm on the GaN channel layer.
And step five, manufacturing the barrier layer.
And simultaneously introducing a Ga source with the flow rate of 70 mu mol/min, an Al source with the flow rate of 70 mu mol/min, hydrogen with the flow rate of 1600sccm and ammonia with the flow rate of 5000sccm into the MOCVD system, and growing an AlGaN barrier layer with the thickness of 25nm on the AlN insert layer.
And step six, manufacturing the multi-channel layer.
Continuously introducing a Ga source with the flow rate of 60 mu mol/min, hydrogen with the flow rate of 1600sccm and ammonia with the flow rate of 5000sccm into the MOCVD system, and growing a lower GaN channel layer on the AlGaN barrier layer, wherein the thickness of the lower GaN channel layer is 50 nm;
continuously introducing an Al source with the flow rate of 60 mu mol/min, hydrogen with the flow rate of 1600sccm and ammonia with the flow rate of 5000sccm into the MOCVD system at the same time, and growing an AlN layer with the thickness of 0.5nm on the lower GaN channel layer;
and simultaneously introducing a Ga source with the flow rate of 70 mu mol/min, an Al source with the flow rate of 70 mu mol/min, hydrogen with the flow rate of 1600sccm and ammonia with the flow rate of 5000sccm into the MOCVD system, and growing an AlGaN barrier layer with the thickness of 25nm on the AlN layer.
And seventhly, manufacturing the cap layer.
And simultaneously introducing a Ga source with the flow rate of 60 mu mol/min, hydrogen with the flow rate of 1600sccm and ammonia with the flow rate of 5000sccm into the MOCVD system, and growing a GaN cap layer with the thickness of 2nm on the multi-channel layer.
And step eight, manufacturing a cathode.
8a) Etching the cathode groove:
manufacturing an annular mask on the GaN cap layerPlacing the sample wafer with mask in ICP reaction chamber, and maintaining the pressure in the reaction chamber at 10 × 10-2Pa, introducing Cl with the flow rate of 10sccm into the reaction chamber2And BCl at a flow rate of 25sccm3And keeping the radio frequency power of the ICP device at 300W and the direct current power at 100W, etching the sample wafer, wherein the depth of the etched groove is from the GaN cap layer to the first group of lower GaN channel layers of the multi-channel layer.
8b) Placing the etched sample wafer into an electron beam evaporation table or a magnetron sputtering table, and keeping the pressure of the reaction chamber at 8.8 × 10-2Pa, depositing cathode metals Ti/Al/Mo/Au on the two sides of the multi-channel layer and the GaN cap layer by using aluminum, molybdenum, gold and titanium targets with the purity of 99.999 percent, wherein the thicknesses of the cathode metals are 30/100/30/100nm respectively, and annealing at the high temperature of 830 ℃ for 40s to form a cathode.
And step nine, etching the anode groove.
Manufacturing a circular mask on the GaN cap layer, placing the sample wafer with the mask in an ICP reaction chamber, and keeping the pressure of the reaction chamber at 10 × 10-2Pa, introducing Cl with the flow rate of 10sccm into the reaction chamber2And BCl at a flow rate of 25sccm3And keeping the radio frequency power of the ICP device at 300W and the direct current power at 100W, etching the sample wafer, wherein the depth of the etched groove is the depth from the GaN cap layer to the GaN channel layer.
And step ten, manufacturing the P-type terminal.
Manufacturing an annular mask on the GaN cap layer, wherein the annular inner circle is circularly superposed with the etched anode groove, applying inductively coupled plasma chemical vapor deposition (ICP-CVD) equipment, setting the pressure of a reaction chamber to be 10mTorr, the ionization voltage to be 3KV, the plasma ionization electrode to be Ni, and the gas in the reaction chamber to be O2、N2And Ar, depositing a P-type NiO film with the thickness of 120nm in the area to be deposited of the mask to form a P-type terminal.
And step eleven, manufacturing an anode.
Making a circular mask on the P-type terminal, placing the mask in an electron beam evaporation stage or a magnetron sputtering stage, and maintaining the pressure of the reaction chamber at 8.8 × 10-2Pa, using tungsten with a purity of 99.999%And a gold target material, wherein Wu/Au metal with the thickness of 30nm/200nm is sputtered on the P-type terminal which is not shielded by the mask and in the circular groove to form an anode.
And step twelve, manufacturing a passivation layer.
And putting the sample subjected to the steps into a plasma chemical vapor deposition PECVD reaction chamber, and depositing a 200 nm-thick SiN passivation layer on the surface of the sample wafer at the high temperature of 400 ℃.
And thirteen, etching the contact holes of the cathode and the anode.
And photoetching and etching the passivation layers on the anode and the cathode to form an anode contact hole and a cathode contact hole, thereby finishing the manufacture of the whole device.
Example 3 an Al substrate was fabricated, in which GaN was used as a substrate, the number of sets of multi-channel layers was 10, Ti/Al/Ti/Au was used as a cathode metal, thicknesses were 80nm/190nm/100nm/100nm, Mo/Au was used as an anode metal of 30/100nm, and a composite medium was used as a passivation layer of 20nm thickness2O3And 200nm thick SiN, AlGaN/GaN multi-channel Schottky barrier diode with P-GaN ═ 150nm P-type terminal.
And step A, preprocessing the surface of the GaN substrate for eliminating dangling bonds.
The specific implementation of this step is the same as step 1 of example 1.
And step B, extending the buffer layer to manufacture the GaN channel layer.
B1) Putting the pretreated GaN substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) system, and introducing a Ga source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm into a reaction chamber at the same time under the conditions that the pressure of the chamber is 100Torr and the temperature is 900 ℃, so as to grow a GaN buffer layer with the thickness of 7 mu m on the substrate;
B2) and continuously introducing a Ga source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm into the MOCVD system, and growing a 350 nm-thick GaN channel layer on the GaN buffer layer.
And step C, manufacturing an insertion layer and a barrier layer.
C1) Introducing an Al source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm into the MOCVD system, and growing an AlN insert layer with the thickness of 1.5nm on the GaN channel layer;
C1) and simultaneously introducing a Ga source with the flow rate of 100 mu mol/min, an Al source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm, and growing an AlGaN barrier layer with the thickness of 23nm on the AlN insert layer.
And D, manufacturing the multi-channel layer.
D1) First set of channel growth
Continuously introducing a Ga source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm into the MOCVD system, and growing a lower GaN channel layer with the thickness of 45nm on the AlGaN barrier layer;
then introducing an Al source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm, and growing an AlN layer with the thickness of 1.5nm on the lower GaN channel layer;
simultaneously introducing a Ga source with the flow rate of 100 mu mol/min, an Al source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm, and growing an upper AlGaN barrier layer with the thickness of 23nm on the AlN layer to finish the growth of the first group of channels;
D2) repeating the growth process of the first group of channels, and sequentially growing a 2 nd group of lower GaN channel layers, AlN layers and upper AlGaN barrier layers on the upper AlGaN barrier layers of the 1 st group of channels respectively; sequentially growing a 3 rd group of lower GaN channel layer, an AlN layer and an upper AlGaN barrier layer on the upper AlGaN barrier layer of the 2 nd group of channels; sequentially growing a 4 th group of lower GaN channel layer, an AlN layer and an upper AlGaN barrier layer on the upper AlGaN barrier layer of the 3 rd group of channels; sequentially growing a 5 th group of lower GaN channel layer, an AlN layer and an upper AlGaN barrier layer on the upper AlGaN barrier layer of the 4 th group of channels; sequentially growing a 6 th group of lower GaN channel layer, an AlN layer and an upper AlGaN barrier layer on the upper AlGaN barrier layer of the 5 th group of channels; sequentially growing a 7 th group of lower GaN channel layer, an AlN layer and an upper AlGaN barrier layer on the upper AlGaN barrier layer of the 6 th group of channels; sequentially growing an 8 th group of lower GaN channel layer, an AlN layer and an upper AlGaN barrier layer on the upper AlGaN barrier layer of the 7 th group of channels; sequentially growing a 9 th group of lower GaN channel layer, an AlN layer and an upper AlGaN barrier layer on the upper AlGaN barrier layer of the 8 th group of channels; and sequentially growing a 10 th group of lower GaN channel layers, AlN layers and upper AlGaN barrier layers on the upper AlGaN barrier layer of the 9 th group of channels, wherein the thickness parameters of each group are the same as those of the 1 st group of channels, so as to obtain 10 groups of multi-channel layers.
And E, manufacturing the cap layer.
And simultaneously introducing a Ga source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm into the MOCVD system, and growing a GaN cap layer with the thickness of 2nm on the 10 th group of multi-channel layers.
And F, manufacturing a cathode.
F1) Etching cathode groove
Manufacturing an annular mask on the GaN cap layer, placing the sample wafer with the manufactured mask in an ICP reaction chamber, and keeping the pressure of the reaction chamber at 9 × 10-2Pa, charging Cl with a flow rate of 10sccm into the reaction chamber2And BCl at a flow rate of 25sccm3And keeping the radio frequency power of the ICP device at 80W and the direct current power at 40W, etching the sample wafer, wherein the depth of the etched groove is from the GaN cap layer to the GaN channel layer under the first group of the multi-channel layers.
F2) Placing the etched sample wafer into an electron beam evaporation table, and maintaining the pressure of the reaction chamber at 8.8 × 10-2Pa, depositing cathode metals Ti/Al/Ti/Au on two sides of the 10 sets of multi-channel layers and the GaN cap layer by using aluminum, gold and titanium targets with the purity of 99.999 percent, wherein the thicknesses of the cathode metals are respectively 80nm/190nm/100nm/100nm, and then annealing at the high temperature of 830 ℃ for 40s to form a cathode.
And G, etching the anode groove.
After a circular mask is manufactured on the GaN cap layer, a sample wafer with the manufactured mask is placed in an ICP reaction chamber, and the pressure of the reaction chamber is kept to be 9 multiplied by 10-2Pa, charging Cl with a flow rate of 10sccm into the reaction chamber2And BCl at a flow rate of 25sccm3And keeping the radio frequency power of the ICP device at 80W and the direct current power at 40W, etching the sample wafer, wherein the depth of the etched groove is the depth from the GaN cap layer to the GaN channel layer.
And step H, manufacturing the P-type terminal.
And manufacturing an annular mask on the GaN cap layer, wherein the inner circle of the annular mask is superposed with the circle of the etched anode groove, putting the sample wafer with the manufactured mask into a Metal Organic Chemical Vapor Deposition (MOCVD) system, introducing a Ga source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm into a reaction chamber at the same time under the conditions that the pressure of the chamber is 100Torr and the temperature of the chamber is 900 ℃, growing 150nm P-type GaN in a region to be deposited of the mask, and doping a donor which is Mg to form a P-type terminal.
And step I, manufacturing an anode.
Making a circular mask on the P-type terminal, placing the mask in a magnetron sputtering platform, and keeping the pressure of the reaction chamber at 8.8 × 10- 2Pa, using molybdenum and gold targets with the purity of 99.999%, sputtering molybdenum-gold metal with the thickness of 30/100nm on the unshielded P-type terminal of the mask and in the circular groove to form an anode.
And step J, manufacturing a passivation layer.
Putting the sample subjected to the steps into an ALD reaction chamber, and depositing Al with the thickness of 20nm2O3And then, putting the sample into a plasma chemical vapor deposition PECVD reaction chamber, and depositing a 200 nm-thick SiN passivation layer on the surface of the sample wafer at the high temperature of 400 ℃.
And step K, etching the contact holes of the cathode and the anode.
And photoetching and etching the passivation layers on the anode and the cathode to form an anode contact hole and a cathode contact hole, thereby finishing the manufacture of the whole device.
The above description is only three specific examples of the present invention, however, the present invention is not limited to the specific details in the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, for example, the cathode metal can be used other than Ti/Al/Ni/Au, Ti/Al/Mo/Au, Ti/Al/Ti/Au used in the examples; the anode metal can also use Pt/Au or Pd/Au or Ni/Au/Ni simple modifications besides Ni/Au, Mo/Au, W/Au used in the examples, which belong to the protection scope of the invention.

Claims (13)

1. The utility model provides a take AlGaN/GaN heterojunction multichannel power diode of P type terminal, it includes substrate (1) from bottom to top, buffer layer (2), the GaN channel layer (3), AlGaN barrier layer (5), the upper portion of AlGaN barrier layer (5) is multichannel layer (6) in proper order, GaN cap layer (7) and passivation layer (10), the both sides of multichannel layer (6) and GaN cap layer (7) are negative pole (11), the centre is circular slot form positive pole (9) and positive pole upper end and notch upper surface have the ascending overlap of horizontal direction, this multichannel layer (6) include n group's channel, 2 is not less than n and is not less than 10, every group's channel comprises last AlGaN barrier layer (63) and lower GaN channel layer (61), its characterized in that:
an AlN insert layer (4) with the thickness of 0.5-2 nm is arranged between the GaN channel layer (3) and the AlGaN barrier layer (5) so as to increase the current density and reduce the on-resistance;
an annular P-type terminal (8) is arranged between the upper part of the GaN cap layer (7) and the horizontal part of the upper end of the anode, the terminal adopts P-GaN or P-NiO, the thickness is 100-500 nm, the phenomenon of the peak of a Schottky contact electric field of the metal semiconductor is improved, and the breakdown voltage of a device is improved;
an AlN layer (62) with the thickness of 0.5-2 nm is arranged between the GaN channel layer (61) and the AlGaN barrier layer (63) in each group of channels of the multi-channel layer (6) so as to increase the current density and reduce the on-resistance;
the regions of the annular cathode metal (11) and the circular anode metal (9) are both groove structures.
2. The diode of claim 1, wherein:
the substrate (1) is made of Si or SiC or GaN material, and the thickness is 300-1200 mu m;
the buffer layer (2) is made of GaN material and has a thickness of 0.5-10 mu m;
the GaN cap layer (7) is 2-5 nm thick;
the passivation layer (10) adopts SiN or SiO2Or Al2O3Or HfO2 single layer media, or a dual layer composite media.
3. The diode of claim 1, wherein:
the GaN channel layer (3) is 100-500 nm thick;
the thickness of the lower GaN channel layer (61) is 20-100 nm, the thickness of the AlN layer (62) is 0.5-2 nm, and the thickness of the upper AlGaN barrier layer (63) is 10-30 nm.
4. A preparation method of a multi-channel power diode with a P-type terminal based on AlGaN/GaN heterojunction two-dimensional electron gas is characterized by comprising the following steps:
1) pretreating the surface of the substrate to remove dangling bonds, and placing the pretreated substrate in H2Carrying out heat treatment in the reaction chamber at the high temperature of 900-1000 ℃, and depositing a GaN buffer layer with the thickness of 0.5-10 mu m by adopting a metal organic compound chemical vapor deposition (MOCVD) process;
2) depositing an unintentional doped GaN channel layer with the thickness of 100-500 nm on the GaN buffer layer by adopting a metal organic compound chemical vapor deposition (MOCVD) process;
3) depositing an AlN insert layer with the thickness of 0.5-2 nm on the GaN channel layer by adopting a metal organic compound chemical vapor deposition (MOCVD) process;
4) depositing an AlGaN barrier layer with the thickness of 15-30 nm on the AlN insert layer by adopting a metal organic compound chemical vapor deposition (MOCVD) process;
5) continuously and sequentially depositing a lower GaN channel layer with the thickness of 20-100 nm, an AlN layer with the thickness of 0.5-2 nm and an upper AlGaN barrier layer with the thickness of 10-30 nm on the AlGaN barrier layer by adopting a metal organic compound chemical vapor deposition (MOCVD) process; continuously accumulating the three-layer structure to form a multi-channel layer;
6) growing a GaN cap layer on the top AlGaN barrier layer of the multi-channel region by adopting a metal organic compound chemical vapor deposition (MOCVD) process, wherein the thickness of the GaN cap layer is 2-5 nm;
7) manufacturing an annular region mask above the GaN cap layer, and etching by adopting Reactive Ion Etching (RIE) or Inductively Coupled Plasma (ICP) technology, wherein the depth of an etched groove is the depth from the GaN cap layer to the first GaN channel layer of the multi-channel region;
8) placing the etched sample into an electron beam evaporation table or a sputtering table, and depositing metal to form a cathode;
9) putting the sample with the deposited metal into an annealing furnace, and annealing at high temperature to form ohmic contact between the cathode metal and the contact interface;
10) manufacturing a circular area mask above the GaN cap layer, and etching by adopting Reactive Ion Etching (RIE) or Inductively Coupled Plasma (ICP) technology, wherein the depth of an etched groove is the depth from the GaN cap layer to the GaN channel layer;
11) manufacturing an annular area mask above the GaN cap layer, wherein the annular area just surrounds one circle of the circular area in the area 10), and putting a sample after the mask is manufactured into a Metal Organic Chemical Vapor Deposition (MOCVD) or inductively coupled plasma chemical vapor deposition (ICP-CVD) reaction chamber to grow a P-type terminal;
12) manufacturing a mask above the P-type terminal, depositing metal on the P-type terminal by adopting an evaporation or magnetron sputtering process, and annealing at high temperature to form an anode;
13) placing the epitaxial wafer subjected to the steps into a Plasma Enhanced Chemical Vapor Deposition (PECVD) or Atomic Layer Deposition (ALD) reaction chamber, and depositing a passivation layer;
14) and photoetching and etching are carried out on the passivation layer to form an electrode contact hole, so that the device is manufactured.
5. The method of claim 4, wherein: the MOCVD process parameters in 1), 2) and 5) are as follows:
the pressure of the reaction chamber is 10-100 Torr;
the temperature of the reaction chamber is 900 ℃;
the Ga source flow is 40-100 mu mol/min;
the hydrogen flow is 1000-2000 sccm;
the flow rate of the ammonia gas is 3000-6000 sccm.
6. The method of claim 4, wherein: the MOCVD process parameters in the steps 3) and 5) are as follows:
the pressure of the reaction chamber is 10-100 Torr;
the temperature of the reaction chamber is 900 ℃;
the flow of the Al source is 40-100 mu mol/min;
the hydrogen flow is 1000-2000 sccm;
the flow rate of the ammonia gas is 3000-6000 sccm.
7. The method of claim 4, wherein: the MOCVD process parameters in the steps 4) and 5) are as follows:
the pressure of the reaction chamber is 10-100 Torr;
the temperature of the reaction chamber is 900 ℃;
the flow of the Al source is 40-100 mu mol/min;
the Ga source flow is 40-100 mu mol/min;
the hydrogen flow is 1000-2000 sccm;
the flow rate of the ammonia gas is 3000-6000 sccm.
8. The method of claim 4, wherein: the MOCVD process parameters in the 6) are as follows:
the pressure of the reaction chamber is 10-100 Torr;
the temperature of the reaction chamber is 900 ℃;
the Ga source flow is 40-100 mu mol/min;
the hydrogen flow is 1000-2000 sccm;
the flow rate of the ammonia gas is 3000-6000 sccm.
9. The method of claim 4, wherein: the ICP process parameters in 7) are as follows:
the pressure in the reaction chamber was 8X 10-2～10×10-2Pa；
Cl2The flow rate is 10 sccm;
BCl3the flow rate is 25 sccm;
the radio frequency power of the ICP equipment is 80-300W;
the DC power is 40-100W.
10. The method of claim 4, wherein: the cathode metal in the step 8) and the step 10) is Ti/Al or Ti/Al/Ni/Au or Ti/Al/Mo/Au or Ti/Al/Ti/Au, wherein the thickness of the first layer of metal is 20-80 nm, the thickness of the second layer of metal is 100-190 nm, the thickness of the third layer of metal is 30-100nm, and the thickness of the fourth layer of metal is 55-100 nm.
11. The method of claim 4, wherein: the ICP-CVD or MOCVD process parameters of the growth P-type terminal in the 11) are as follows:
the inductively coupled plasma chemical vapor deposition ICP-CVD process parameters are as follows:
the pressure of the reaction chamber is 10 mTorr;
the ionization voltage is 3 KV;
the plasma ionization electrode is Ni;
the gas in the reaction chamber is O2、N2And Ar;
the material deposited in the area to be deposited is P-type NiO with the thickness of 150 nm.
The metal organic chemical vapor deposition MOCVD process parameters are as follows:
the pressure of the reaction chamber is 10-100 Torr;
the temperature of the reaction chamber is 900 ℃;
the Ga source flow is 40-100 mu mol/min;
the hydrogen flow is 1000-2000 sccm;
the flow rate of the ammonia gas is 3000-6000 sccm;
the doping donor is Mg.
12. The method as claimed in claim 4, wherein the anode metal in 12) is Ni/Au or Pt/Au or Pd/Au or Mo/Au or W/Au or Ni/Au/Ni, wherein the thickness of the first layer metal is 30-100nm, the thickness of the second layer metal is 100-200 nm, and the thickness of the third layer metal is 20-500 nm.
13. The method of claim 4, wherein: the PECVD or ALD process parameters for depositing the passivation layer in 13) are as follows:
the plasma enhanced chemical vapor deposition PECVD process parameters are as follows:
the pressure of the reaction chamber is 0.5-30 Pa;
the temperature of the reaction chamber is 200-500 ℃;
selecting gas introduced into the reaction chamber according to the material of the passivation layer;
the atomic layer deposition ALD process parameters are as follows:
the temperature of the reaction chamber is 250-400 ℃;
the pressure of the reaction chamber and the gas introduced into the reaction chamber are selected according to the material of the passivation layer.
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