CN110957375A - Vertical AlN Schottky diode based on ion implantation edge terminal and manufacturing method - Google Patents
Vertical AlN Schottky diode based on ion implantation edge terminal and manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000002161 passivation Methods 0.000 claims abstract description 20
- 230000015556 catabolic process Effects 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 19
- 229910052737 gold Inorganic materials 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 6
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
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- 238000001259 photo etching Methods 0.000 claims description 5
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052905 tridymite Inorganic materials 0.000 claims description 3
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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Abstract
The invention discloses a vertical AlN Schottky diode based on an ion implantation edge terminal, and mainly solves the problems of low breakdown voltage and poor reliability in the prior art. The solar cell comprises a substrate (1), an n + layer (2) and a drift layer (3) from bottom to top, wherein a cathode (5) is arranged on the lower portion of the substrate (1), an anode (6) is arranged on the upper portion of the drift layer (3), a passivation layer (7) is arranged on the upper portions of the drift layer (3) and the anode (6), and an edge terminal (4) is formed in the drift layer (3) below the anode (6) through ion implantation. The substrate, the n + layer and the drift layer are made of AlN materials, and the edge terminal is implanted with ions to reduce the peak value of the edge electric field below the anode, so that the breakdown voltage and the reliability of the device are improved, and the device can be used as a basic device for a high-power system and a switch.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a vertical AlN Schottky diode which can be used for microwave rectification, amplitude limiters, power switches and power conversion circuits.
Background
With the continuous development of the field of semiconductor power devices, the performance of the power devices is fundamentally changed from the first generation of Si materials to the second generation of GaAs materials. However, so far, the performance of semiconductor power devices made of traditional two-generation materials has approached the theoretical limit determined by the material properties. In order to further reduce the chip area, improve the working frequency, improve the working temperature, reduce the on-resistance, improve the breakdown voltage, reduce the volume of the whole machine and improve the efficiency of the whole machine, the wide-bandgap semiconductor material represented by GaN is distinguished in the aspects of preparing high-temperature, radiation-resistant, high-working frequency and high-power devices by virtue of the larger bandgap, the higher critical breakdown electric field and the higher electron saturation drift velocity, and the excellent physical and chemical properties of stable chemical performance, high temperature resistance, radiation resistance and the like, and is widely applied to the fields of aerospace, radar, communication and the like. Currently, research on GaN-based schottky diode devices is one of international hotspots, generally, GaN schottky diode devices are divided into lateral devices and vertical devices, and compared with lateral schottky diodes, vertical schottky diodes can improve the breakdown characteristics of the devices by only increasing the thickness of the drift region of the devices without sacrificing the lateral size of a chip, and therefore have higher power density. In addition, the conducting channel of the vertical Schottky diode is wide, the current density is high, and the conducting channel of the vertical Schottky diode is located inside the device, so that the vertical Schottky diode is not easily influenced by the surface state and has good dynamic characteristic. However, when the vertical GaN schottky diode is reverse biased, the electric field below the anode is not uniformly distributed in the horizontal direction, that is, the closer to the edge of the electrode, the denser the electric field lines are distributed, so that the maximum value of the electric field appears at the edge below the anode, which causes avalanche breakdown easily at the edge, causes the decrease of the actual breakdown voltage and output power of the vertical GaN schottky diode and the increase of reverse leakage current, and reduces the reliability of the device. In addition, although the critical breakdown field strength of the GaN material is greatly improved compared with the first two generations of semiconductor materials, the breakdown voltage of the conventional vertical schottky diode based on the GaN material is low, the reliability of the device is affected, and the application of the diode device in a high-voltage scene is difficult to meet.
Disclosure of Invention
The invention aims to provide a vertical AlN Schottky diode based on an ion implantation edge terminal and a manufacturing method thereof aiming at the defects of the prior device technology, so as to improve the breakdown characteristic of the device and the reliability of the device.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the vertical AlN Schottky diode based on the ion implantation edge terminal comprises a substrate 1, an n + layer 2 and a drift layer 3 from bottom to top, wherein a cathode 5 is arranged on the lower part of the substrate 1, an anode 6 is arranged on the upper part of the drift layer 3, and a passivation layer 7 is arranged on the upper parts of the drift layer 3 and the anode 6, and is characterized in that:
the substrate 1, the n + layer 2 and the drift layer 3 adopt AlN materials to improve the breakdown voltage of the device,
an edge terminal 4 is formed in the drift layer 3 below the anode 6 by ion implantation, and is used for reducing the peak value of the fringe electric field below the anode and improving the breakdown voltage.
Further, the thickness of the n + layer 2 is 0.5-3 μm, and the doping concentration is 1018cm-3～1020cm-3(ii) a The thickness of the drift layer 3 is 1-30 mu m, and the doping concentration is 1015cm-3～1018cm-3。
Further, Mg or F or N or Ar ions are used as the ions implanted in the edge terminal 4.
Further, the passivation layer 7 is made of SiN or SiO2Or Al2O3Or HfO2A medium.
Secondly, a manufacturing method of the vertical AlN Schottky diode based on the ion implantation edge terminal is characterized by comprising the following steps:
1) cleaning and pretreating the surface of the substrate to eliminate surface dangling bonds, and removing the dangling bonds at H2Carrying out heat treatment at 900-1200 ℃ in the atmosphere reaction chamber to remove surface pollutants;
2) depositing an AlN n + layer with the thickness of 0.5-3 mu m on the substrate after the heat treatment by adopting an MOCVD (metal organic chemical vapor deposition) process, wherein the doping concentration of the AlN n + layer is 1018cm-3～1020cm-3；
3) Depositing an AlN drift layer with the thickness of 1-30 mu m on the AlN n + layer by adopting an MOCVD (metal organic chemical vapor deposition) process, wherein the doping concentration of the AlN drift layer is 1015cm-3～1018cm-3；
4) Manufacturing a mask on the AlN drift layer, injecting Mg or F or N or Ar ions into the drift layer by adopting an ion injection process, and annealing at the high temperature of 450-1000 ℃ for 1-300 min to form an edge terminal;
5) depositing cathode metal on the back side of the substrate by adopting an evaporation or magnetron sputtering process, and annealing at the high temperature of 850 ℃;
6) manufacturing a mask on the drift layer again, and depositing anode metal on the drift layer by adopting an evaporation or magnetron sputtering process;
7) placing the epitaxial wafer subjected to the steps into a PECVD reaction chamber, and carrying out passivation layer deposition;
8) and photoetching and etching the passivation layer of the anode to form an anode contact hole, thereby finishing the manufacture of the device.
Compared with the prior art, the invention has the following advantages:
1. the substrate, the n + layer and the drift layer are made of AlN materials, so that the critical breakdown field intensity is improved, and the breakdown voltage of the device is improved.
2. According to the invention, the edge terminal is formed under the anode through ion implantation, so that the peak value of the edge electric field under the anode is reduced, and the breakdown voltage is improved.
Drawings
Fig. 1 is a block diagram of a vertical AlN schottky diode of the present invention based on ion implantation edge termination.
Fig. 2 is a flow chart of an implementation of the present invention to fabricate the device of fig. 1.
Detailed Description
The invention is described in further detail below with reference to the figures and examples.
Referring to fig. 1, the vertical AlN schottky diode based on ion implantation edge termination according to the present invention includes, from bottom to top, a substrate 1, an n + layer 2, and a drift layer 3, wherein a cathode 5 is disposed on a lower portion of the substrate 1, an anode 6 is disposed on an upper portion of the drift layer 3, a passivation layer 7 is disposed on upper portions of the drift layer 3 and the anode 6, and an edge termination 4 is formed in the drift layer 3 under the anode 6 by ion implantation. The substrate 1 is made of AlN material; the n + layer 2 adopts AlN, the thickness of the AlN is 0.5-3 mu m, and the doping concentration is 1018cm-3～1020cm-3(ii) a The drift layer 3 is made of AlN, the thickness of the AlN ranges from 1 to 30 mu m, and the doping concentration is 1015cm-3～1018cm-3(ii) a The ion implantation edge terminal 4 adopts AlN implanted with Mg or F or N or Ar ions; the passivation layer 7 is made of SiN or SiO2Or Al2O3Or HfO2A medium; the cathode 5 adopts Ti/Al/Ni/Au or Ti/Al/Ti/Au or Ti/Al/Mo/Au or Ta/Al/Ta metal; the anode 6 adopts Ni/Au or Pt/Au or Pd/Au or W/Au or Ni/Au/Ni metal.
Referring to fig. 2, the invention produces a vertical AlN schottky diode based on ion implantation edge termination, and three examples are given as follows:
example 1 a vertical AlN schottky diode with a drift layer thickness of 1 μm was fabricated using Mg ion implantation edge termination.
1.1) placing an aluminum nitride substrate into HF acid solution to be soaked for 1min, then sequentially placing the aluminum nitride substrate into acetone solution, absolute ethyl alcohol solution and deionized water to be ultrasonically cleaned for 10min respectively, and drying the cleaned aluminum nitride substrate by using nitrogen;
1.2) cleaning and drying the cleaned aluminum nitride substrate in H2And (3) performing heat treatment at the temperature of 1000 ℃ in the atmosphere reaction chamber to remove surface pollutants.
And 2, manufacturing an n + layer.
2.1) putting the pretreated aluminum nitride substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) system, and setting the pressure of a reaction chamber to be 10Torr and the temperature to be 900 ℃;
2.2) simultaneously introducing an Al source with the flow rate of 50 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm into the reaction chamber, and growing on an aluminum nitride substrate with the thickness of 0.5 mu m and the doping concentration of 1018cm-3An AlN n + layer.
And 3, manufacturing a drift layer.
Ga source with the flow rate of 50 mu mol/min, hydrogen with the flow rate of 1000sccm and ammonia with the flow rate of 3000sccm are simultaneously introduced into the reaction chamber, and the n + layer is grown with the thickness of 1 mu m and the doping concentration of 1015cm-3An AlN drift layer.
And 4, manufacturing an ion implantation edge terminal.
Making a mask on the AlN drift layer, placing a sample with the mask in a reaction chamber of an ion implanter for Mg ion implantation with the energy of 10keV and the implantation dose of 1 multiplied by 1012cm-2And then annealing at 450 ℃ for 1min to form Mg ion implantation edge terminals.
And 5, manufacturing a cathode.
Putting the sample subjected to the process into an E-Beam electron Beam evaporation table, depositing metal Ti/Al/Ni/Au at the lower part of a substrate at an evaporation rate of 0.1nm/s as a cathode, and annealing at the high temperature of 850 ℃ for 30s, wherein the thickness of Ti is 20-100 nm, the thickness of Al is 100-300 nm, the thickness of Ni is 20-200 nm, and the thickness of Au is 20-200 nm, but the thickness of Ti/Al/Ni/Au is not limited in the embodiment to 40nm/150nm/40nm/50nm respectively.
And 6, manufacturing an anode.
And manufacturing a mask on the AlN drift layer again, then placing the sample on an E-Beam electron Beam evaporation table, and depositing metal Ni/Au as an anode in an anode window at the evaporation rate of 0.1nm/s, wherein the thickness of Ni is 20-100 nm, the thickness of Au is 50-500 nm, and the thickness of Ni/Au is 70nm/300nm respectively in the example but not limited.
And 7, manufacturing a passivation layer.
And putting the sample wafer subjected to the steps into a plasma chemical vapor deposition PECVD reaction chamber, and depositing a SiN passivation layer with the thickness of 50nm at the high temperature of 400 ℃.
And 8, manufacturing an anode contact hole.
And photoetching and etching the passivation layer on the anode to form an anode contact hole, thereby finishing the manufacture of the whole device.
Example 2 a vertical AlN schottky diode with a drift layer thickness of 15 μm and edge termination using F ion implantation was fabricated.
Firstly, preprocessing for eliminating dangling bonds on the surface of the aluminum nitride substrate.
The specific implementation of this step is the same as step 1 of example 1.
And step two, manufacturing an n + layer.
Placing the pretreated aluminum nitride substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) system, setting the pressure of a reaction chamber at 50Torr and the temperature at 900 ℃, simultaneously introducing an Al source with the flow of 70 mu mol/min, hydrogen with the flow of 1500sccm and ammonia with the flow of 4000sccm into the reaction chamber, and growing the aluminum nitride substrate with the thickness of 2 mu m and the doping concentration of 1019cm-3An AlN n + layer.
And step three, manufacturing a drift layer.
Ga source with the flow rate of 70 mu mol/min, hydrogen with the flow rate of 1500sccm and ammonia with the flow rate of 4000sccm are simultaneously introduced into the reaction chamber, and the n + layer is grown to have the thickness of 15 mu m and the doping concentration of 1017cm-3An AlN drift layer.
And step four, manufacturing an ion implantation edge terminal.
4.1) manufacturing a mask on the AlN drift layer, and placing a sample after the mask is manufactured in a reaction chamber of an ion implanter for F ion implantation, wherein the energy of the F ion is 35keV, and the implantation dosage is1×1013cm-2；
4.2) annealing for 150min at the high temperature of 800 ℃ to form an F ion implantation edge terminal.
And step five, manufacturing a cathode.
5.1) putting the sample after the process into a magnetron sputtering reaction chamber, and keeping the pressure of the reaction chamber at 9 x 10- 2Pa, depositing metal Ti/Al/Ti/Au on the lower part of the substrate as a cathode by using aluminum, titanium and gold targets with the purity of 99.999 percent, wherein the thickness of Ti is 20-100 nm, the thickness of Al is 100-300 nm, the thickness of Ti is 20-200 nm, the thickness of Au is 20-200 nm, and the thicknesses of Ti/Al/Ti/Au taken in the embodiment but not limited to the embodiment are 70nm/150nm/100nm/100nm respectively;
5.2) annealing at 850 ℃ for 30 s.
And sixthly, manufacturing an anode.
6.1) manufacturing a mask on the AlN drift layer again to form an anode window;
6.2) placing the sample forming the anode window in a magnetron sputtering reaction chamber, and controlling the pressure of the reaction chamber to be 9 x 10- 2Pa, using nickel and gold target materials with the purity of 99.999 percent, and depositing metal Ni/Au/Ni in an anode window to serve as an anode, wherein the thickness of Ni is 20-100 nm, the thickness of Au is 50-300 nm, the thickness of Ni is 20-500 nm, and the thickness of Ni/Au/Ni is respectively 50nm/100nm/200nm in the embodiment but not limited.
And seventhly, manufacturing a passivation layer.
Putting the sample wafer subjected to the steps into a Plasma Enhanced Chemical Vapor Deposition (PECVD) reaction chamber, and depositing SiO with the thickness of 50nm at the high temperature of 400 DEG C2And a passivation layer.
And step eight, manufacturing an anode contact hole.
And photoetching and etching the passivation layer on the anode to form an anode contact hole, thereby finishing the manufacture of the whole device.
Example 3 a vertical AlN schottky diode with a drift layer thickness of 30 μm and edge termination was fabricated using N-ion implantation.
Step A, preprocessing for eliminating dangling bonds is carried out on the surface of the aluminum nitride substrate.
The specific implementation of this step is the same as step 1 of example 1.
And step B, manufacturing an n + layer.
Putting the pretreated aluminum nitride substrate into a Metal Organic Chemical Vapor Deposition (MOCVD) system, and growing the aluminum nitride substrate with the thickness of 3 mu m and the doping concentration of 10 on the pretreated substrate by adopting an MOCVD process20cm-3Wherein the parameters of the MOCVD process are as follows:
the pressure in the reaction chamber is 100Torr, the temperature is 900 ℃,
and simultaneously introducing three gases of an Al source, hydrogen and ammonia gas into the reaction chamber, wherein the flow of the Al source is 100 mu mol/min, the flow of the hydrogen is 2000sccm, and the flow of the ammonia gas is 6000 sccm.
And step C, manufacturing a drift layer.
Simultaneously introducing Ga source with the flow rate of 100 mu mol/min, hydrogen with the flow rate of 2000sccm and ammonia with the flow rate of 6000sccm into the reaction chamber, and growing the N + layer with the thickness of 30 mu m and the doping concentration of 1018cm-3An AlN drift layer.
And D, manufacturing an ion implantation edge terminal.
Making a mask on the AlN drift layer, placing the sample after making the mask in a reaction chamber of an ion implanter, injecting the sample with the energy of 50keV and the injection dose of 1 multiplied by 1014cm-2And annealing at 1000 ℃ for 300min to form an N ion implantation edge terminal.
And E, manufacturing a cathode.
Putting the sample after the above process into a magnetron sputtering reaction chamber, and keeping the pressure of the reaction chamber at 9.5 × 10- 2Pa, depositing metal Ti/Al/Mo/Au on the lower part of the substrate as a cathode by using aluminum, titanium, molybdenum and gold targets with the purity of 99.999%, and annealing at 850 ℃ for 30s, wherein the thickness of Ti is 20-100 nm, the thickness of Al is 100-300 nm, the thickness of Mo is 20-200 nm, the thickness of Au is 20-200 nm, and the thicknesses of Ti/Al/Ti/Au are respectively 50nm/150nm/80nm/100nm in the embodiment but not limited thereto.
And F, manufacturing an anode.
Making a mask on the AlN drift layer again to form an anode window, placing the sample in a magnetron sputtering reaction chamber, and controlling the pressure of the reaction chamber to be 9.5 multiplied by 10-2Pa, depositing Pt/Au metal as an anode in an anode window by using platinum and gold targets with the purity of 99.999%, wherein the thickness of Pt is 20-100 nm, the thickness of Au is 50-300 nm, and the thicknesses of Pt/Au are respectively 50nm/150nm in the example but not limited thereto.
And G, manufacturing a passivation layer.
Placing the sample wafer into a Plasma Enhanced Chemical Vapor Deposition (PECVD) reaction chamber, and depositing Al with the thickness of 50nm at the high temperature of 400 DEG C2O3And a passivation layer.
And H, manufacturing an anode contact hole.
And photoetching and etching the passivation layer on the anode to form an anode contact hole, thereby finishing the manufacture of the whole device.
The above description is only three specific examples of the present invention, however, the present invention is not limited to the specific details in the above embodiments, and many simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications all fall within the protection scope of the present invention.
Claims (10)
1. The utility model provides a perpendicular AlN schottky diode based on ion implantation edge terminal includes substrate (1), n + layer (2), drift layer (3) from bottom to top, and the lower part of substrate (1) is equipped with negative pole (5), and the upper portion of drift layer (3) is equipped with positive pole (6), and the upper portion of drift layer (3) and positive pole (6) is equipped with passivation layer (7), its characterized in that:
the substrate (1), the n + layer (2) and the drift layer (3) are made of AlN materials so as to improve the breakdown voltage of the device;
an edge terminal (4) is formed in the drift layer (3) below the anode (6) through ion implantation, and is used for reducing the peak value of the edge electric field below the anode and improving the breakdown voltage.
2. Device according to claim 1, characterized in that the n + layer (2) has a thickness of 0.5 to 3 μm and a doping concentrationDegree of 1018cm-3～1020cm-3。
3. Device according to claim 1, characterized in that the drift layer (3) has a thickness of 1 to 30 μm and a doping concentration of 1015cm-3～1018cm-3。
4. Device according to claim 1, characterized in that the ions implanted in the edge termination (4) are Mg or F or N or Ar ions.
5. Device according to claim 1, characterized in that the passivation layer (7) is of SiN or SiO2Or Al2O3Or HfO2A medium.
6. A manufacturing method of a vertical AlN Schottky diode based on an ion implantation edge terminal is characterized by comprising the following steps:
1) cleaning and pretreating the surface of the substrate to eliminate surface dangling bonds, and removing the dangling bonds at H2Carrying out heat treatment at 900-1200 ℃ in the atmosphere reaction chamber to remove surface pollutants;
2) depositing an AlN n + layer with the thickness of 0.5-3 mu m on the substrate after the heat treatment by adopting an MOCVD (metal organic chemical vapor deposition) process, wherein the doping concentration of the AlN n + layer is 1018cm-3～1020cm-3；
3) Depositing an AlN drift layer with the thickness of 1-30 mu m on the AlN n + layer by adopting an MOCVD (metal organic chemical vapor deposition) process, wherein the doping concentration of the AlN drift layer is 1015cm-3～1018cm-3；
4) Manufacturing a mask on the AlN drift layer, injecting Mg or F or N or Ar ions into the drift layer by adopting an ion injection process, and annealing at the high temperature of 450-1000 ℃ for 1-300 min to form an edge terminal;
5) depositing cathode metal on the back side of the substrate by adopting an evaporation or magnetron sputtering process, and annealing at the high temperature of 850 ℃;
6) manufacturing a mask on the drift layer again, and depositing anode metal on the drift layer by adopting an evaporation or magnetron sputtering process;
7) placing the epitaxial wafer subjected to the steps into a PECVD reaction chamber, and carrying out passivation layer deposition;
8) and photoetching and etching the passivation layer of the anode to form an anode contact hole, thereby finishing the manufacture of the device.
7. The method of claim 6, wherein: the MOCVD process parameters of the step 2) and the step 3) are as follows:
the pressure in the reaction chamber is 10to 100Torr,
the flow rate of the Al source is 50-100 mu mol/min,
the flow rate of ammonia gas is 3000-6000sccm,
the hydrogen flow rate is 1000-2000 sccm.
8. The method of claim 6, wherein: the parameters of the ion implantation process in the step 4) are as follows:
the implantation energy is 10to 50keV,
the implantation dose is 1 × 1012～1×1014cm-2。
9. The method of claim 6, wherein the cathode metal in 5) is Ti/Al/Ni/Au or Ti/Al/Ti/Au or Ti/Al/Mo/Au or Ta/Al/Ta, wherein the thickness of the first layer metal is 20-100 nm, the thickness of the second layer metal is 100-300 nm, the thickness of the third layer metal is 20-200 nm, and the thickness of the fourth layer metal is 20-200 nm.
10. The method as claimed in claim 6, wherein the anode metal in 6) is Ni/Au or Pt/Au or Pd/Au or W/Au or Ni/Au/Ni, wherein the thickness of the first layer metal is 20-100 nm, the thickness of the second layer metal is 50-500 nm, and the thickness of the third layer metal is 20-500 nm.
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| CN112038414A (en) * | 2020-09-04 | 2020-12-04 | 西安电子科技大学 | Vertical aluminum nitride Schottky diode based on silicon carbide substrate and preparation method |
| CN112038411A (en) * | 2020-09-04 | 2020-12-04 | 西安电子科技大学 | Vertical aluminum nitride PN junction diode based on silicon carbide substrate and preparation method |
| CN113964183A (en) * | 2021-09-13 | 2022-01-21 | 西安电子科技大学 | Fluorine plasma injection terminal gallium oxide power diode and preparation method thereof |
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| CN112038411B (en) * | 2020-09-04 | 2021-11-30 | 西安电子科技大学 | Vertical aluminum nitride PN junction diode based on silicon carbide substrate and preparation method |
| CN113964183A (en) * | 2021-09-13 | 2022-01-21 | 西安电子科技大学 | Fluorine plasma injection terminal gallium oxide power diode and preparation method thereof |
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