CN109378346A - A kind of GaN base Schottky barrier diode based on field plate - Google Patents
A kind of GaN base Schottky barrier diode based on field plate Download PDFInfo
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- CN109378346A CN109378346A CN201810984771.7A CN201810984771A CN109378346A CN 109378346 A CN109378346 A CN 109378346A CN 201810984771 A CN201810984771 A CN 201810984771A CN 109378346 A CN109378346 A CN 109378346A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 85
- 239000002131 composite material Substances 0.000 claims abstract description 67
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 51
- 238000005036 potential barrier Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 20
- 230000015556 catabolic process Effects 0.000 abstract description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 56
- 229910002601 GaN Inorganic materials 0.000 description 55
- 230000005684 electric field Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 229910017083 AlN Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
Abstract
The present invention relates to a kind of GaN base Schottky barrier diode based on field plate, including substrate, stacks gradually in buffer layer and channel layer on the substrate；Composite potential barrier layer on the channel layer is set；Cathode, composite anode and p-type AlGaN cap layers on the composite potential barrier layer are set, and the p-type AlGaN cap layers are between the cathode and the composite anode；Base stage in the p-type AlGaN cap layers is set, and the length of the base stage is less than or equal to the length of the p-type AlGaN cap layers；The passivation layer being covered in the composite potential barrier layer, the p-type AlGaN cap layers, the composite anode, the cathode and the base stage.The embodiment of the present invention reduces the cut-in voltage of device based on the GaN base Schottky barrier diode of field plate while improving device electric breakdown strength, so that the two while performance indicator with higher, improve the breakdown characteristics and reliability of device.
Description
Technical field
The invention belongs to microelectronics technologies, and in particular to a kind of GaN base Schottky barrier diode based on field plate.
Background technique
With the development of microelectric technique, traditional first generation Si semiconductor and second generation GaAs semiconductor power device performance
The theoretical limit that its material itself determines is had been approached, and is the semiconductor material with wide forbidden band of representative with gallium nitride (GaN), due to tool
There are bigger forbidden bandwidth, higher critical breakdown electric field and a higher electronics saturation drift velocity, and stable chemical performance, resistance to
High temperature, it is anti-radiation outstanding advantages of, show one's talent in terms of preparing high performance power device, in diode field, application potential is huge
Greatly.
GaN base Schottky barrier diode (Schottky Barrier Diode, SBD) is substitution Si base schottky potential barrier
The ideal component of diode.However, all there are many deficiencies from theory to technology for GaN base SBD device at present, performance is remote
Not up to due level.Therefore, there are also very big potentialities to be exploited for GaN base SBD device.
In order to which excellent characteristics, the prior arts such as the high critical breakdown electric field that makes full use of GaN material propose following two
Method improves the voltage endurance of GaN base SBD device.The first is the pressure resistance that GaN base SBD device is improved by field plate structure
Characteristic, field plate techniques are a kind of traditional common terminal technology for being used to improve device pressure resistance.Field plate in GaN base SBD device
Basic structure is to prepare one layer of dielectric film in schottky metal electrode periphery by the method for deposit, photoetching and etching, will
Schottky electrode suitably extends to the top of medium, to form a circle MIM element structure in electrode periphery.
Field plate structure passes through the bending degree for changing anode (Schottky electrode) edge depletion layer boundary, to change the electricity in depletion layer
Field distribution reduces peak electric field strength, to improve the breakdown voltage of device.However the introducing of field plate can be such that device parasitic capacitor increases
Greatly, the high frequency and switching characteristic of device are influenced.Second is the pressure resistance spy that GaN base SBD device is improved by protection ring structure
Property, protection ring structure is also one of the structure generallyd use in current GaN base SBD device (the especially device of vertical structure).
This technique uses the method for selective oxidation first, forms layer of oxide layer at the edge of Schottky contacts, then basic herein
Upper diffusion or ion implanting form one layer of p-type and protect ring structure.Protect ring structure can effective modulation device surface field, make device
Part transverse electric field distribution is more uniform, to improve the breakdown voltage of device.But the realization of ring structure is protected to depend on half
The part doping that controllable precise is carried out in conductor material, will generally be realized by thermal diffusion or ion implantation technique.For
GaN material, diffusion coefficient of the p type impurity (such as Mg) in GaN is very low, so that can not be realized with the method for thermal diffusion accurate
Part doping；And ion implantation technique is not yet mature, caused lattice damage is difficult to be eliminated with the method for annealing.
In conclusion the prior art will affect its of device while improving the voltage endurance of traditional GaN base SBD device
His performance；And in traditional GaN base SBD device, Schottky contact barrier can influence simultaneously device positive cut-in voltage and
Reverse withstand voltage, so that the two is difficult to realize higher performance indicator simultaneously.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides a kind of GaN base Xiao Te based on field plate
Base barrier diode.The technical problem to be solved in the present invention is achieved through the following technical solutions:
The embodiment of the invention provides a kind of GaN base Schottky barrier diode based on field plate, including substrate, successively layer
The buffer layer and channel layer being laminated on the substrate, further includes:
Composite potential barrier layer on the channel layer is set；
Cathode, composite anode and p-type AlGaN cap layers on the composite potential barrier layer, the p-type AlGaN cap layers are set
Between the cathode and the composite anode；
Base stage in the p-type AlGaN cap layers is set, and the length of the base stage is less than or equal to the p-type AlGaN cap layers
Length；
It is covered on the composite potential barrier layer, the p-type AlGaN cap layers, the composite anode, the cathode and the base stage
On passivation layer.
In one embodiment of the invention, the composite potential barrier layer includes the first barrier layer, the second barrier layer and third
Barrier layer, wherein the third barrier layer is between first barrier layer and the first barrier layer.
In one embodiment of the invention, the material of first barrier layer and the second barrier layer includes AlxGa1- xN, wherein x range is 0.2~0.3.
In one embodiment of the invention, the third abarrier layer material includes AlxGa1-xN, wherein x range is 0.05
~0.2.
In one embodiment of the invention, the composite anode includes Ohmic contact and Schottky contacts, wherein described
Ohmic contact is located on first barrier layer, and the Schottky contacts are covered on first barrier layer and the Ohmic contact
On.
In one embodiment of the invention, the length of the p-type AlGaN cap layers be less than or equal to the cathode (107) with
The half of distance between the composite anode.
In one embodiment of the invention, the doping concentration of the p-type AlGaN cap layers is 1 × 1016cm-3~1 ×
1020cm-3。
Compared with prior art, beneficial effects of the present invention:
1, GaN base Schottky barrier diode of the invention by introduce composite potential barrier layer, p-type AlGaN cap layers, base stage and
Composite anode reduces the cut-in voltage of device while improving device electric breakdown strength, to alleviate device electric breakdown strength
Contradiction between cut-in voltage so that the two simultaneously performance indicator with higher, improve device breakdown characteristics and can
By property.
2, present invention introduces composite potential barrier layer, p-type AlGaN cap layers and base stage, the first barrier layer, second in composite potential barrier layer
Two-dimensional electron gas (two dimensional electron gas, 2DEG) concentration that barrier layer is formed between channel layer respectively
Lower, the 2DEG concentration formed between third barrier layer and channel layer is higher, and the 2DEG of various concentration is conducive to consumption extending transversely
Area to the greatest extent；The reverse biased pn junction formed between p-type AlGaN cap layers and composite potential barrier layer simultaneously has at depletion action, with channel
2DEG forms RESURF (Reduced SURface Field reduces surface field) effect, and anode edge height can be effectively reduced
Electric field peak；The high electric field peak at composite anode edge can be effectively reduced with depletion region extending transversely in base stage；Composite potential barrier layer, p-type
The collective effect of AlGaN cap layers and base stage keeps depletion region extending transversely and completely depleted, in p-type AlGaN cap layers right end, base
A new electric field spike is introduced at pole end and cathode edge respectively, keeps device surface field distribution more uniform, to mention
The breakdown voltage of high device.
3, the present invention is contacted with anode Schottky using anode ohmic contact and is collectively constituted composite anode, and composite anode is by field
Control 2DEG channel switches principle is introduced into GaN base SBD device, instead of traditional GaN base SBD device using Schottky come control switch
Conduction mechanism so that device cut-in voltage is minimized.
Detailed description of the invention
Fig. 1 is a kind of structural representation of the GaN base Schottky barrier diode based on field plate provided in an embodiment of the present invention
Figure；
Fig. 2 is a kind of scale diagrams of the GaN base SBD device based on field plate provided in an embodiment of the present invention；
Fig. 3 is another cathode site schematic diagram provided in an embodiment of the present invention；
Fig. 4 is a kind of groove structure schematic diagram provided in an embodiment of the present invention；
Fig. 5 is a kind of structural schematic diagram for traditional GaN base SBD device that the prior art provides；
Fig. 6 is the transfer of the GaN base SBD device provided in an embodiment of the present invention based on field plate and traditional GaN base SBD device
Property comparison figure；
Fig. 7 is the reversed of the GaN base SBD device based on field plate and tradition GaN base SBD device provided in an embodiment of the present invention
Pressure-resistant field distribution compares figure.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to
This.
Embodiment one
The embodiment of the invention provides a kind of GaN base Schottky barrier diode based on field plate, including substrate, successively layer
The buffer layer and channel layer being laminated on the substrate, further includes:
Composite potential barrier layer on the channel layer is set；
Cathode, composite anode and p-type AlGaN cap layers on the composite potential barrier layer, the p-type AlGaN cap layers are set
Between the cathode and the composite anode；
Base stage in the p-type AlGaN cap layers is set, and the length of the base stage is less than or equal to the p-type AlGaN cap layers
Length；
It is covered on the composite potential barrier layer, the p-type AlGaN cap layers, the composite anode, the cathode and the base stage
On passivation layer.
The GaN base Schottky barrier diode based on field plate of the embodiment of the present invention is by introducing composite potential barrier layer, p-type
AlGaN cap layers, base stage and composite anode reduce the cut-in voltage of device while improving device electric breakdown strength, thus slow
The contradiction between device electric breakdown strength and cut-in voltage is solved, so that the two while performance indicator with higher, improve device
The breakdown characteristics and reliability of part.
Embodiment two
Referring to Figure 1, Fig. 1 is a kind of GaN base Schottky barrier diode based on field plate provided in an embodiment of the present invention
Structural schematic diagram, comprising: substrate 101, the buffer layer 102 on substrate 101, the channel layer on buffer layer 102
103, the composite potential barrier layer on channel layer 103, cathode 107, composite anode and p-type AlGaN on composite potential barrier layer
Cap layers 106, the base stage 111 in p-type AlGaN cap layers 106 are covered on composite potential barrier layer, p-type AlGaN cap layers 106, cathode
107, the passivation layer 112 on composite anode and base stage 111.Wherein, p-type AlGaN cap layers 106 are located at cathode 107 and composite anode
Between, the length l of base stage 1118Less than or equal to the length l of p-type AlGaN cap layers 1067。
Further, composite potential barrier layer includes the first barrier layer 1041, the second barrier layer 1042 and third barrier layer 105,
First barrier layer 1041 and the second barrier layer 1042 are located at the both ends of composite potential barrier layer, and third barrier layer 105 is located at first
Between barrier layer 1041 and the second barrier layer 1042；Further, the length l of third barrier layer 10532DEG need to be made in third gesture
It is completely depleted in barrier layer 105, i.e. the length l of third barrier layer 1053More than or equal to the length of 2DEG depletion region.
Further, the first barrier layer 1041 for forming composite potential barrier layer is identical with the material of the second barrier layer 1042,
Using the Al of high Al contentsxGa1-xN material, wherein content, that is, x range of Al is 0.2~0.3；Third barrier layer 105 uses
The Al of low Al componentxGa1-xN material, wherein content, that is, x range of Al is 0.05~0.2.
Specifically, forming hetero-junctions between composite potential barrier layer and channel layer, there are 2DEG at heterojunction boundary；Due to
Al content in one barrier layer and the second barrier layer is higher, and the polarization intensity between channel layer is stronger, at hetero-junctions
2DEG concentration is also higher；Conversely, the Al content in third barrier layer is lower, the polarization intensity between channel layer is weaker, different
2DEG concentration at matter knot is relatively low；The 2DEG of low concentration facilitates the extending transversely of channel 2DEG depletion region, thus in cathode
Edge introduces a new electric field spike, keeps device surface field distribution more uniform, breakdown voltage is improved.
Further, p-type AlGaN cap layers 106 are arranged on third barrier layer 105, length l7Less than or equal to cathode 107 with
Distance l between composite anode6Half, refer to Fig. 2, Fig. 2 is a kind of GaN base based on field plate provided in an embodiment of the present invention
The scale diagrams of SBD device.
Further, the doping concentration of p-type AlGaN cap layers 106 is 1 × 1016cm-3~1 × 1020cm-3。
Specifically, the reverse biased pn junction formed between p-type AlGaN cap layers and composite potential barrier layer has depletion action to 2DEG,
Can be with the field distribution of modulation device: when applying higher forward voltage to cathode under OFF state, p-type AlGaN cap layers be close to yin
Reverse-biased PN junction is formed between the region and composite potential barrier layer of pole, and then forms space-charge region, in composite potential barrier layer upper surface
Positive space charge is generated, positive space charge can attract electric field, to reduce 2DEG at the hetero-junctions of p-type AlGaN cap layers lower section
Concentration, extend the length of depletion region, p-type AlGaN cap layers close to cathode side formed a new electric field peak, make GaN
The surface electric field distribution of base SBD device is more uniform, and breakdown voltage is improved.
Specifically, the length l of p-type AlGaN cap layers7Less than or equal to distance l between cathode and composite anode6Half, can be
Guarantee big forward current density while improving breakdown voltage, meets the requirement of power device.
Further, base stage 111 is arranged in p-type AlGaN cap layers 106 and the side of composite anode is arranged in.
Specifically, the introducing of base stage can be with the depletion region of device extending transversely, so that device surface field distribution is more equal
It is even.
Under the collective effect of composite potential barrier layer that is above-mentioned while introducing, p-type AlGaN cap layers and base stage, device exhausts
Area is extending transversely and completely depleted, introduces one at p-type AlGaN cap layers right end, base stage end and cathode edge respectively newly
Electric field spike, the surface electric field distribution of device is more uniform, so that breakdown voltage is improved.
Further, cathode 107 is located on the second barrier layer 1042, forms ohm between the second barrier layer 1042 and connects
Touching；Further, due to the length l of third barrier layer 1053More than or equal to the length of 2DEG depletion region, therefore, cathode 107
It can be located at simultaneously on the second barrier layer 1042 and third barrier layer 105, refer to Fig. 3, Fig. 3 is provided in an embodiment of the present invention
Another cathode site schematic diagram.
Further, composite anode is located on the first barrier layer 1041, including Ohmic contact 108 and Schottky contacts 110,
Ohmic contact 108 is located on the first barrier layer 1041, and Schottky contacts 110 are covered on Ohmic contact 108 and the first barrier layer
On 1041, it is etched with groove structure 109 in the first barrier layer 1041, Schottky contacts 110 are arranged in groove structure 109, please join
See that Fig. 4, Fig. 4 are a kind of groove structure schematic diagram provided in an embodiment of the present invention.
It should be noted that in embodiments of the present invention, Ohmic contact 108 refers to be formed between the first barrier layer 1041
The Ohm contact electrode of Ohmic contact, Schottky contacts 110 refer to forms Schottky contacts between the first barrier layer 1041
Composite anode is collectively formed in Schottky contact electrode, Ohm contact electrode and Schottky contact electrode.
Specifically, collectively forming composite anode using Ohmic contact and Schottky contacts；When device in its natural state, sun
2DEG in the Schottky contacts lower channels of pole is completely depleted, and diode is in natural off state.When the bias of anode
When increase, the interior electronics of anode Schottky contact lower channels is reassembled, when anodic bias is greater than channel cut-in voltage
When, electronics can flow to anode ohmic metal electrode from cathode, realize that the low-loss of diode is opened.
Field control 2DEG channel switches principle is introduced into GaN base SBD device by above-mentioned composite anode, instead of traditional GaN base SBD
Devices use Schottky carrys out the conduction mechanism of control switch, so that device cut-in voltage is minimized.
To sum up, under the collective effect of p-type AlGaN cap layers, composite potential barrier layer, base stage and composite anode, GaN base SBD device
The breakdown voltage of part is improved, while cut-in voltage is reduced, and alleviates the contradiction between breakdown voltage and cut-in voltage,
So that performance indicator with higher, the breakdown characteristics and reliability of device are also improved the two simultaneously.
In a specific embodiment, 101 material of substrate includes one of sapphire, Si, SiC, AlN, GaN, AlGaN
Or it is a variety of；Buffer layer 102,103 material of channel layer include one of GaN, AlN, AlGaN, InGaN, InAlN or a variety of；
The material of first barrier layer 1041, the second barrier layer 1042 and third barrier layer 105 can also include GaN, AlN, InGaN,
One of InAlN or a variety of；112 material of passivation layer includes SiNx、Al2O3、AlN、Y2O3、La2O3、Ta2O5、TiO2、HfO2、
ZrO2One of or it is a variety of；Cathode 107 and 108 material of Ohmic contact are metal alloy compositions, and common metal alloy has
Ti/Al/Ni/Au or Mo/Al/Mo/Au etc.；110 material of Schottky contacts is metal alloy of the workfunction range in 4.6eV-6eV
Material, common metal alloy have Ni/Au or Ti/Au etc.；The doped chemical of p-type AlGaN cap layers 106 can be Mg, Fe, Zn, C
Deng but not limited to this.
Embodiment three
It is 1 μm the embodiment of the invention also provides a kind of base length on the basis of embodiment one and embodiment two
GaN base SBD device, referring to Figure 1 and Fig. 2, wherein substrate 101, buffer layer 102, channel layer 103, composite potential barrier layer and passivation
The lateral dimension l of layer 1121It is 19.5 μm, 1041 length l of the first barrier layer2It is 4.5 μm, 1042 length l of the second barrier layer4For
4.5 μm, the length l of third barrier layer 1053It is 10 μm, the size l of composite anode5Be 4.5 μm, composite anode and cathode 107 it
Between distance l6It is 14 μm, the length l of p-type AlGaN cap layers 1067It is 7 μm.
Fig. 5 is referred to, Fig. 5 is a kind of structural schematic diagram for traditional GaN base SBD device that the prior art provides, comprising: lining
Bottom 201, the buffer layer 202 on substrate 201, the channel layer 203 on buffer layer 202, the gesture on channel layer 203
Barrier layer 204, anode 206 and cathode 205 positioned at 204 surface both ends of barrier layer, is covered on anode 206, cathode 205 and barrier layer
Passivation layer 207 on 204.Wherein, the transverse direction of substrate 201, buffer layer 202, channel layer 203, barrier layer 204 and passivation layer 207
Size is 19.5 μm, and 206 length of anode is 4.5 μm, and the spacing of cathode and anode is 14 μm.
Fig. 6 is referred to, it is soft using Silvaco to the above-mentioned GaN base SBD device based on field plate and traditional GaN base SBD device
Part is emulated to obtain Fig. 6, and Fig. 6 is the GaN base SBD device provided in an embodiment of the present invention based on field plate and traditional GaN base SBD
The transfer characteristic of device compares figure.As seen from Figure 6, the cut-in voltage of traditional devices (traditional GaN base SBD device) is 0.93V, newly
The cut-in voltage of type device (the GaN base SBD device of the embodiment of the present invention) is 0.65V.It is novel compared to traditional GaN base SBD device
The cut-in voltage of device (the GaN base SBD device of the embodiment of the present invention) GaN base SBD device reduces 30%.
Fig. 7 is referred to, it is soft using Silvaco to the above-mentioned GaN base SBD device based on field plate and traditional GaN base SBD device
Part is emulated to obtain Fig. 7, and Fig. 7 is the GaN base SBD device provided in an embodiment of the present invention based on field plate and traditional GaN base SBD
The reverse withstand voltage field distribution of device compares figure, wherein x represents the lateral dimension of device and each structure.As seen from Figure 7, it passes
There are an electric field spike, breakdown voltage 274V in system device (traditional GaN base SBD device)；(present invention is implemented new device
The GaN base SBD device of example) in introduced respectively at p-type AlGaN cap layers right end, base stage end and cathode edge one it is new
Electric field spike, to produce four electric field spikes, so that device surface field distribution is more uniform, breakdown voltage is
2850V, breakdown voltage improve 940%.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (7)
1. a kind of GaN base Schottky barrier diode based on field plate, including substrate (101), stack gradually in the substrate
(101) buffer layer (102) and channel layer (103) on, which is characterized in that further include:
Composite potential barrier layer on the channel layer (103) is set；
Cathode (107), composite anode and p-type AlGaN cap layers (106) on the composite potential barrier layer, the p-type are set
AlGaN cap layers (106) are between the cathode (107) and the composite anode；
Base stage (111) on the p-type AlGaN cap layers (106) is set, and the length of the base stage (111) is less than or equal to the P
The length of type AlGaN cap layers (106)；
It is covered on the composite potential barrier layer, the p-type AlGaN cap layers (106), the composite anode, the cathode (107) and institute
State the passivation layer (112) on base stage (111).
2. GaN base Schottky barrier diode as described in claim 1, which is characterized in that the composite potential barrier layer includes the
One barrier layer (1041), the second barrier layer (1042) and third barrier layer (105), wherein the third barrier layer (105) is located at
Between first barrier layer (1041) and the first barrier layer (1042).
3. GaN base Schottky barrier diode as claimed in claim 2, which is characterized in that first barrier layer (1041)
Material with the second barrier layer (1042) includes AlxGa1-xN, wherein x range is 0.2~0.3.
4. GaN base Schottky barrier diode as claimed in claim 2, which is characterized in that third barrier layer (105) material
Material includes AlxGa1-xN, wherein x range is 0.05~0.2.
5. GaN base Schottky barrier diode as claimed in claim 2, which is characterized in that the composite anode includes ohm
Contacting (108) and Schottky contacts (110), wherein the Ohmic contact (108) is located on first barrier layer (1041),
The Schottky contacts (110) are covered on first barrier layer (1041) and the Ohmic contact (108).
6. GaN base Schottky barrier diode as described in claim 1, which is characterized in that the p-type AlGaN cap layers (106)
Length be less than or equal between the cathode (107) and the composite anode distance half.
7. GaN base Schottky barrier diode as described in claim 1, which is characterized in that the p-type AlGaN cap layers (106)
Doping concentration be 1 × 1016cm-3~1 × 1020cm-3。
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Application publication date: 20190222 |