CN106024914A - GaN-based schottky diode having hybrid anode electrode structure and preparation method thereof - Google Patents
GaN-based schottky diode having hybrid anode electrode structure and preparation method thereof Download PDFInfo
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- CN106024914A CN106024914A CN201610500501.5A CN201610500501A CN106024914A CN 106024914 A CN106024914 A CN 106024914A CN 201610500501 A CN201610500501 A CN 201610500501A CN 106024914 A CN106024914 A CN 106024914A
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- 238000002161 passivation Methods 0.000 claims abstract description 26
- 238000000137 annealing Methods 0.000 claims abstract description 21
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- 238000005516 engineering process Methods 0.000 claims description 69
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- 229910052737 gold Inorganic materials 0.000 claims description 3
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
Abstract
The invention relates to a GaN-based schottky diode having a hybrid anode electrode structure and a preparation method thereof. The GaN-based schottky diode comprises a substrate, an epitaxial layer, an electrode and a passivation dielectric insulation layer. A cathode electrode of the electrode is an ohmic contact that is formed by depositing metal at a cathode region of the surface of the epitaxial layer and carrying out annealing; a first anode electrode of the electrode is a first schottky contact that is formed by depositing low-work-function metal layer at a first anode region on the surface of the epitaxial layer; and a second anode electrode of the electrode is a second schottky contact that is formed by depositing an ultra-thin dielectric layer at a second anode region on the surface of the epitaxial layer and then depositing a high-work-function metal layer. The two schottky contacts form a hybrid anode electrode structure jointly. According to the invention, on the basis of the hybrid structure of the low-work-function metal electrode and the high-work-function metal-ultra-thin dielectric electrode, the first anode and the second anode of the GaN-based schottky diode are formed, so that the starting voltage of the device can be reduced effectively and the reverse leakage current of the device can be reduced, the surface electric field distribution of the device is improved, the reverse breakdown voltage is enhanced, and thus the working performance of the device is enhanced.
Description
Technical field
The present invention relates to the discrete field of electronic devices of quasiconductor, particularly relate to the GaN of a kind of multilayer anode electrode structure
Based schottky diode and preparation method thereof.
Background technology
Power electronic device is the important support in electronic information epoch, is required for power electricity in almost all of appliance circuit
Sub-device.For reduce energy transmission transformation process loss, exploitation low-power consumption, high reliability power electronic device most important.
Currently, the power electronic device development based on Si technology is highly developed, can meet the voltage 200V consumer product of following low pressure
Product.But, Si base power electronic device partial properties close to the materials theory limit, and along with voltage increase, power strengthen or
Person's ambient temperature raises, and complexity and the cost of device increase sharply, less reliable.Power electricity based on SiC technology
The sub-device history of existing about 10 years, has greater advantage in the field such as track traffic of electric current high-power, big, but is constrained to
Material expensive and technical monopoly, the development of SiC technology is relatively slow, is not suitable at present using in consumer market.With GaN technology it is
The device on basis is at the early-stage, and its performance can match in excellence or beauty SiC base device, and has bigger low cost potential.
GaN is important third generation semi-conducting material, has band gap length, breakdown field strength height, saturated electrons drift speed
Degree is big, heterogeneous interface two-dimensional electron gas (2DEG) concentration high, it is possible to the service behaviour of device is substantially improved, and is to make height
Pressure, low forward voltage drop and the preferable new material of frequency power electrical device.GaN base Schottky diode structure is simply, just
Little to pressure drop, using majority carrier as working medium, therefore there is low-power consumption, the feature of high switching rate, device is the most extensive
The multiple time is almost nil.Especially, the 2DEG formed using AlGaN/GaN heterojunction boundary is as GaN base Xiao Te of conducting channel
Based diode, can have lower dynamic on resistance and the output of bigger power, be highly suitable as switching device application
In appliance circuits such as rectification circuit, switching mode mu balanced circuit, inverter bridge, PFCs, have broad application prospects.
Currently, industry-wide and the large-scale application of GaN base Schottky diode is still faced with series of technical
Restriction, including reduce device dynamic conducting resistance technology, and improve breakdown reverse voltage technology etc..Ask for these
Topic, scientific research personnel both domestic and external has carried out relatively in-depth study, to realizing low-power consumption, high efficiency, high reliability and high stable
The device of property.
The technical method of conventional reduction dynamic on resistance has: optimised devices epitaxial structure, thus improve 2DEG concentration,
Reduce anodic-cathodic spacing, use anode groove structure etc..But, the limited extent that 2DEG concentration improves, to epitaxy technology
Require higher；Electrode spacing can not infinitely reduce, and otherwise will cause big electric leakage and the integrity problem such as easily punctures；Use sun
Pole groove structure makes potential barrier can cause the increase of reverse leakage while reducing, and causes device the most breakdown.Conventional carries
The technical method of high breakdown reverse voltage has: utilizes high-work-function metal as positive contact, mixes Fe at device cushion or mix
C, increase anodic-cathodic spacing, field plate structure, floating becket structure, junction diode structure and super junction device structure
Deng.But, major part strengthens the method for reverse voltage endurance to reducing the effect of forward cut-in voltage inconspicuous, even can draw
Play the increase of dynamic on resistance.
In order to solve the contradiction between low dynamic on resistance and high breakdown reverse voltage, the old Wan Jun of Hong Kong University of Science and Thchnology etc.
People devises a kind of lateral field-effect commutator (L-FER), and anode uses the combination of Ohmic contact and Schottky contacts, and leads to
Crossing the mode that below Schottky contacts, F ion is injected, cut-in voltage is reduced to 0.63V, breakdown voltage is maintained at 390V simultaneously,
But device technology technology of preparing is required higher by the method, adds complicated process of preparation degree.Gu Chuan electrician company of Japan
(Furukawa) S.Yoshida et al. proposes field effect Schottky two pole of a kind of high low work function metal mixed electrode
Pipe (FESBD)；High low work function metal is combined by Zhongshan University professor Liu Yang et al. with groove structure, it is achieved that low unlatching
Voltage, improves breakdown reverse voltage simultaneously to a certain extent.But said method is limited to the size of metal level work function
(Pt metal as the highest in common work function, the most only about 5.6eV), to improving reverse voltage endurance limited use.Therefore, phase
Pass technological means needs to be further improved.
Summary of the invention
Present invention aims to the contradiction between the low dynamic on resistance of device and the reverse voltage endurance of height, it is provided that
A kind of GaN base Schottky diode of multilayer anode electrode structure and preparation method thereof.
The technical scheme is that and be achieved in that:
The GaN base Schottky diode of multilayer anode electrode structure of the present invention, is characterized in: include substrate, epitaxial layer,
Electrode and dielectric passivation insulating barrier, wherein said epitaxial layer includes nucleating layer, stress and dislocation buffering on extension direction successively
Layer and charge shift layer, described nucleating layer is connected on substrate, and described electrode includes cathode electrode, first anode electrode and second
Anode electrode, described cathode electrode is the Ohmic contact formed in cathode zone deposition metal the annealing of epi-layer surface,
Described first anode electrode be formed at the first anode area deposition low work function metal of epi-layer surface by low merit
Function metal and first Schottky contacts of quasiconductor composition, described second plate electrode is the second sun in epi-layer surface
Territory, polar region elder generation deposit very thin dielectric layer, redeposited high work-function metal layer and formed by high-work-function metal, very thin medium and
Second Schottky contacts of quasiconductor composition, two described Schottky contacts are collectively forming multilayer anode electrode structure, and
Described second plate region than first anode region on locus closer to cathode zone, described dielectric passivation insulating barrier covers
Cover on the surface of epitaxial layer and offer in the position that electrode is corresponding so that electrode and the extraneous window electrically connected.
Wherein, described substrate include but not limited to Sapphire Substrate, GaN single crystal substrate, GaN-sapphire compound substrate,
AlN single crystalline substrate, AlN-sapphire compound substrate, Si substrate.
It is a kind of or the most several that described nucleating layer includes but not limited in GaN nucleating layer, AlN nucleating layer, AlGaN nucleating layer
Plant combination.
Described stress and dislocation cushion include but not limited to the one in GaN, InN, AlN, AlGaN of involuntary doping
Or any several combination.
Described charge shift layer includes but not limited to involuntary doping GaN simple substance and the GaN simple substance of N-shaped doping or GaN base
Hetero-junctions；Wherein, GaN base hetero-junctions is made up of channel layer and barrier layer, it is possible to for GaN base Schottky diode provide one group or
Several groups of two-dimensional electron gas；Channel layer includes but not limited to a kind of or any several combination in GaN, AlGaN, AlN of high resistant；Gesture
Barrier layer includes but not limited to a kind of or any several combination in AlGaN, AlInN, AlN, AlInGaN material, and these materials
Can be involuntary doping, N-shaped doping, it is also possible to be localized p-type doping.
Described cathode electrode includes but not limited to Ti-Al alloy, Ti-Al-Ti-Au alloy, Ti-Al-Ni-Au alloy, Ti-
Al-Mo-Au alloy, V-Al-Pt-Au alloy.
Described low work function metal includes but not limited to a kind of in Ti, Al, V, Ti-Au alloy or any several groups
Close.
Described high work-function metal layer includes but not limited to a kind of in Ni, Pd, Pt, Ni-Au alloy or any several groups
Close.
Described very thin dielectric layer includes but not limited to relatively thin SiO2、SiNx、MgO、Al2O3One or any in medium
Several combinations, and the thickness of very thin dielectric layer is 0.1nm-10nm.
Described dielectric passivation insulating barrier includes but not limited to thicker SiO2、SiNx、Al2O3、AlN、HfO2、ZrO2In medium
A kind of or any several combination, and the thickness of dielectric passivation insulating barrier is 50nm-1 μm.
The preparation method of the GaN base Schottky diode of multilayer anode electrode structure of the present invention, is characterized in bag
Include following steps:
A, utilize metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) or hydride gas-phase epitaxy (HVPE)
Technology, grows the most successively for forming the nucleating layer of epitaxial layer, stress and dislocation cushion and electric charge drift
Move layer；
B, utilize photo etched mask technology and sense coupling (ICP) or chemical reaction etching (RIE) or wet-chemical
Corrosion technology, completes the discrete isolation of GaN base Schottky diode on epitaxial layer；
C, utilize photo etched mask technology and ICP or RIE or wet-chemical etching technology, the subregion of epitaxial layer is carried out selectivity
Processing, removes portion of epi layer and forms groove structure or ridge structure, and uses short annealing or tubular annealing skill if desired
Art repairs etching injury；
D, use photo etched mask technology and electron beam evaporation or thermal evaporation or magnetron sputtering technique, on the cathode chamber of epi-layer surface
Area deposition metal, and utilize short annealing or tubular annealing technology to form Ohmic contact；
E, utilize photo etched mask technology and electron beam evaporation or thermal evaporation or magnetron sputtering technique, at the first sun of epi-layer surface
Polar region area deposition low workfunction metal, forms first Schottky contacts；
F, utilize plasma enhanced chemical vapor deposition (PECVD) or ald (ALD) or electron beam evaporation or heat steam
Send out or magnetron sputtering technique, deposit one layer of very thin medium in epi-layer surface, and by photo etched mask technology and ICP or RIE or
Wet-chemical etching technique removes unwanted part, only retains very thin medium in second plate region as second plate electrode
Potential barrier regulation material；
G, utilize PECVD or ald or electron beam evaporation or thermal evaporation or magnetron sputtering technique, sink in epi-layer surface
Long-pending one layer of thicker dielectric passivation insulating barrier, and removed not by photo etched mask technology and ICP or RIE or wet-chemical etching technique
The part needed, exposes the window corresponding with negative electrode, the first anode and second plate；
H, utilize photo etched mask technology and electron beam evaporation or thermal evaporation or magnetron sputtering technique, the electrode figure of definition second plate
Shape also deposits high-work-function metal, forms second Schottky contacts, thus completes GaN base Xiao Te of multilayer anode electrode structure
The preparation of based diode.
The present invention compared with prior art, has the advantage that
The present invention combines low workfunction metal electrode, high-work-function metal/two kinds of electrode structures of very thin media electrode, as GaN
The anode of based schottky diode.Under conditions of forward bias, electric current passes through low workfunction metal electrode injection to epitaxial layer
In, and converge to negative electrode outflow, owing to the first Schottky contact barrier is relatively low, it is possible to achieve relatively low forward cut-in voltage；?
Under conditions of reverse bias, along with reverse biased increases, the potential barrier space-charge region of the first anode and second plate expands, electric charge
The majority carrier of drift region is gradually exhausted by first, second anode, and produces certain leakage current, electric leakage saturated it
Before, leakage current depends primarily on the minority carrier concentration in space-charge region, mobility, electric field level and dislocation and lacks
Fall into etc. factor, thus leakage current along with reverse biased increase and increase, when occur electric leakage saturated after, leakage current mainly takes
Certainly in the height of contact berrier.The second plate being made up of high-work-function metal/very thin media electrode on locus from the moon
Pole is relatively near, and by the regulation of very thin medium, corresponding contact berrier can be the highest, thus it is reverse to be effectively reduced device
Electric leakage saturation current.It addition, utilize first, second anode to expand anode region, it is possible to improve the electricity near device surface anode
Field distribution, in conjunction with less reverse leakage saturation current, can be obviously enhanced the reverse breakdown characteristics of device.Therefore, the present invention
The GaN base Schottky diode of multilayer anode electrode structure is proposed, it is possible on the basis of effectively reducing device cut-in voltage, subtract
Gadget reverse leakage current, improves device surface Electric Field Distribution, strengthens reverse voltage endurance.
And, the GaN base Schottky diode of the multilayer anode electrode structure that the present invention proposes and anode groove structure, office
The structures such as territory doping or field plate combine, it is possible to reduce forward cut-in voltage further or improve reverse breakdown characteristics,
Improve device performance further.
The present invention is further illustrated below in conjunction with the accompanying drawings.
Accompanying drawing explanation
Fig. 1 is the overall structure signal of the GaN base Schottky diode of the embodiment of the present invention 1 multilayer anode electrode structure
Figure.
Fig. 2 is the overall structure signal of the GaN base Schottky diode of the embodiment of the present invention 2 multilayer anode electrode structure
Figure.
Fig. 3 is the overall structure signal of the GaN base Schottky diode of the embodiment of the present invention 3 multilayer anode electrode structure
Figure.
Detailed description of the invention
As shown in Figure 1-Figure 3, the GaN base Schottky diode of multilayer anode electrode structure of the present invention, including lining
The end 1, epitaxial layer, electrode and dielectric passivation insulating barrier 8, wherein said epitaxial layer includes nucleating layer 2 on extension direction successively, answers
Power and dislocation cushion 3 and charge shift layer 4, described nucleating layer 2 connects on substrate 1, described electrode include cathode electrode 5,
First anode electrode 6 and second plate electrode 7, described cathode electrode 5 be epi-layer surface cathode zone deposit metal also
The Ohmic contact annealed and formed, described first anode electrode 6 is the low work content of first anode area deposition in epi-layer surface
First Schottky contacts being made up of low workfunction metal and quasiconductor counting metal level and formed, described second plate electrode
7 be formed at second plate region elder generation deposit very thin dielectric layer, the redeposited high work-function metal layer of epi-layer surface by
High-work-function metal, very thin medium and second Schottky contacts of quasiconductor composition, two described Schottky contacts are common
Define multilayer anode electrode structure, and described second plate region than first anode region on locus closer to negative electrode
Region, described dielectric passivation insulating barrier 8 cover on the surface of epitaxial layer and offer in the position that electrode is corresponding so as electricity
The window that pole electrically connects with the external world.Wherein, described substrate 1 includes but not limited to that Sapphire Substrate, GaN single crystal substrate, GaN-are blue
Gem compound substrate, AlN single crystalline substrate, AlN-sapphire compound substrate, Si substrate.Described nucleating layer 2 includes but not limited to GaN
A kind of or any several combination in nucleating layer, AlN nucleating layer, AlGaN nucleating layer.Described stress and dislocation cushion 3 include
But a kind of or any several combination being not limited in GaN, InN, AlN, AlGaN of involuntary doping.Described charge shift layer 4 wraps
Include but be not limited to involuntary doping GaN simple substance and the GaN simple substance of N-shaped doping or GaN base hetero-junctions；Wherein, GaN base hetero-junctions by
Channel layer and barrier layer composition, it is possible to provide one group or several groups of two-dimensional electron gas for GaN base Schottky diode；Channel layer includes
But a kind of or any several combination being not limited in GaN, AlGaN, AlN of high resistant；Barrier layer include but not limited to AlGaN,
A kind of or any several combination in AlInN, AlN, AlInGaN material, and these materials can be that involuntary doping, N-shaped are mixed
Miscellaneous, it is also possible to be localized p-type doping.Described cathode electrode 5 includes but not limited to Ti-Al alloy, Ti-Al-Ti-Au alloy, Ti-
Al-Ni-Au alloy, Ti-Al-Mo-Au alloy, V-Al-Pt-Au alloy.Described low work function metal include but not limited to Ti,
A kind of or any several combination in Al, V, Ti-Au alloy.Described high work-function metal layer include but not limited to Ni, Pd, Pt,
A kind of or any several combination in Ni-Au alloy.Described very thin dielectric layer includes but not limited to relatively thin SiO2、SiNx、MgO、
Al2O3A kind of or any several combination in medium, and the thickness of very thin dielectric layer is 0.1nm-10nm.Described dielectric passivation is exhausted
Edge layer 8 includes but not limited to thicker SiO2、SiNx、Al2O3、AlN、HfO2、ZrO2A kind of or any several combination in medium,
And the thickness of dielectric passivation insulating barrier 8 is 50nm-1 μm.
The preparation method of the GaN base Schottky diode of multilayer anode electrode structure of the present invention, including following step
Rapid:
A, utilize metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) or hydride gas-phase epitaxy (HVPE)
Technology, grows the most successively for forming the nucleating layer of epitaxial layer, stress and dislocation cushion and electric charge drift
Move layer；
B, utilize photo etched mask technology and sense coupling (ICP) or chemical reaction etching (RIE) or wet-chemical
Corrosion technology, (i.e. through processing technique, epitaxial layer is by former to complete the discrete isolation of GaN base Schottky diode on epitaxial layer
The whole attached state come become discrete state, such as: 2 inches of epitaxial wafers, epitaxial layer can the most individual 300 micron * 300 of discrete one-tenth
The Schottky diode of micron size, but these Schottky diodes are still unified on substrate)；
C, utilize photo etched mask technology and ICP or RIE or wet-chemical etching technology, the subregion of epitaxial layer is carried out selectivity
Processing, removes portion of epi layer and forms groove structure or ridge structure, and uses short annealing or tubular annealing skill if desired
Art repairs etching injury；
D, use photo etched mask technology and electron beam evaporation or thermal evaporation or magnetron sputtering technique, on the cathode chamber of epi-layer surface
Area deposition metal, and utilize short annealing or tubular annealing technology to form Ohmic contact；
E, utilize photo etched mask technology and electron beam evaporation or thermal evaporation or magnetron sputtering technique, at the first sun of epi-layer surface
Polar region area deposition low workfunction metal, forms first Schottky contacts；
F, utilize plasma enhanced chemical vapor deposition (PECVD) or ald (ALD) or electron beam evaporation or heat steam
Send out or magnetron sputtering technique, deposit one layer of very thin medium in epi-layer surface, and by photo etched mask technology and ICP or RIE or
Wet-chemical etching technique removes unwanted part, only retains very thin medium in second plate region as second plate electrode
Potential barrier regulation material；
G, utilize PECVD or ald or electron beam evaporation or thermal evaporation or magnetron sputtering technique, sink in epi-layer surface
Long-pending one layer of thicker dielectric passivation insulating barrier, and removed not by photo etched mask technology and ICP or RIE or wet-chemical etching technique
The part needed, exposes the window corresponding with negative electrode, the first anode and second plate；
H, utilize photo etched mask technology and electron beam evaporation or thermal evaporation or magnetron sputtering technique, the electrode figure of definition second plate
Shape also deposits high-work-function metal, forms second Schottky contacts, thus completes GaN base Xiao Te of multilayer anode electrode structure
The preparation of based diode.
Embodiment one:
As it is shown in figure 1, this gives the GaN base Schottky diode device of a kind of simple multilayer anode electrode structure
Part, including:
Substrate 1 is Sapphire Substrate；Nucleating layer 2 is AlN nucleating layer；Stress and the GaN that dislocation cushion 3 is involuntary doping delay
Rush layer；The GaN charge shift layer that charge shift layer 4 adulterates for N-shaped；Cathode electrode 5 is Ti-Al-Ni-Au alloy；The first anode
The low work function metal of electrode 6 is Ti-Au alloy-layer；The very thin dielectric layer 71 of second plate electrode 7 is Al2O3Very thin medium
Layer；Dielectric passivation insulating barrier 8 is HfO2Dielectric passivation insulating barrier；The high work-function metal layer 72 of second plate electrode 7 is Ni-
Au alloy-layer.
The preparation method of the GaN base schottky diode device of multilayer anode electrode structure, concrete technology in the present embodiment
Step is:
The most on a sapphire substrate, utilize MOCVD epitaxy growing technology grow successively the low temperature AI N nucleating layer of 20nm, 3 μm non-
Deliberately the GaN charge shift layer of the N-shaped doping of doping GaN cushion and 100nm, forms complete device epitaxial layers；
B. utilize photo etched mask technology and ICP deep etching, epitaxial layer completes the discrete isolation of device；
C. using photo etched mask technology and electron beam evaporation, the cathode zone in epi-layer surface is deposited with Ti-Al-Ni-Au alloy
As cathode electrode, and under nitrogen atmosphere, 800 DEG C of annealing form Ohmic contact in 60 seconds in tubular annealing stove；
D. photo etched mask technology and electron beam evaporation are utilized, at the first anode region of epi-layer surface evaporation low work function
Ti-Au alloy, as first anode metal level, forms first Schottky contacts；
E. utilize ALD technique, deposit one layer of Al in epi-layer surface2O3Very thin medium, thickness about 0.1nm, and pass through photoetching
Mask technique and ICP etching remove unwanted part, only retain very thin medium in second plate region, as second plate electricity
The potential barrier regulation material of pole；
F. utilize radiofrequency magnetron sputtering technology, deposit one layer of HfO in epi-layer surface2Dielectric passivation insulating barrier, thickness is 50nm,
And remove unwanted part by photo etched mask technology and wet-chemical etching etching technics, expose and cathode electrode, the first sun
Pole electrode, the corresponding window of second plate electrode；
G. utilize photo etched mask technology and electron beam evaporation, define the electrode pattern of second plate and be deposited with the Ni-of high work function
Au alloy, as the metal level of second plate electrode, forms second Schottky contacts, thus completes multilayer anode electrode structure
The preparation of GaN base Schottky diode.
Embodiment two:
As in figure 2 it is shown, this gives multilayer anode electrode structure GaN base Xiao of a kind of band field plate structure, groove structure
Special based diode device, including:
Substrate 1 is GaN-sapphire compound substrate；Nucleating layer 2 is GaN nucleating layer；Stress and dislocation cushion 3 are mixed for involuntary
Miscellaneous AlN cushion；Charge shift layer 4 is the GaN/Al of high resistant0.3Ga0.7N hetero-junctions；Cathode electrode 5 closes for Ti-Al-Mo-Au
Gold；The low-power function metal of first anode electrode 6 is Ti-Al-Ti-Au alloy-layer；The very thin medium of second plate electrode 7
Layer 71 is the very thin dielectric layer of MgO；Dielectric passivation insulating barrier 8 is SiNxDielectric passivation insulating barrier；The high power of second plate electrode 7
Function metal 72 is Pd-Pt-Au alloy-layer.
The concrete technology of the preparation method of the GaN base schottky diode device of multilayer anode electrode structure in the present embodiment
Step is:
A., in GaN-sapphire compound substrate, the technology such as HVPE epitaxial growth are utilized to grow the low temperature GaN nucleation of 20nm successively
Layer, the involuntary doping AlN cushion 3 of 3 μm and by the 70nm GaN and 30nm Al of high resistant0.3Ga0.7The GaN-that N is constituted
Al0.3Ga0.7N hetero-junction electric-charge drift layer, forms complete device epitaxial layers；
The most same as in Example 1, utilize photo etched mask technology and ICP deep etching, complete the discrete isolation of device；With reality
Execute example 1 visibly different, after completing the discrete isolation of device, formed before cathode ohmic contact, use photo etched mask technology and
RIE dry etching technology, carries out selectivity processing to epitaxial layer structure subregion, and etching depth is about 100nm, removes part
Epitaxial layer, forms groove structure, and carries out tubular annealing reparation etching injury under ammonia atmosphere；
C. using photo etched mask technology and magnetron sputtering technique, the cathode zone in epi-layer surface sputters Ti-Al-Mo-Au and closes
Gold is as cathode electrode, and 830 DEG C of short annealings form Ohmic contact in 15 seconds in a nitrogen atmosphere；
D. photo etched mask technology and electron beam evaporation are utilized, at the first anode region of epi-layer surface evaporation low work function
Ti-Al-Ti-Au alloy, as first anode metal level, forms first Schottky contacts；It is visibly different with embodiment 1,
First anode metal level and recess sidewall and epi-layer surface all form Schottky contacts, wherein contact available with recess sidewall
2DEG and interelectrode tunneling characteristics reduce forward cut-in voltage further；
E. utilize electron beam evaporation technique, at the very thin medium of epi-layer surface one layer of MgO of deposition, thickness about 5nm, and pass through
Photo etched mask technology and ICP etching remove unwanted part, only retain very thin medium in second plate region, as the second sun
The potential barrier regulation material of pole electrode；
F. utilize electron beam evaporation technique, deposit layer of sin in epi-layer surfacexDielectric passivation insulating barrier, thickness is 500nm,
And remove unwanted part by photo etched mask technology and RIE dry etch process, expose and cathode electrode, first anode electricity
The window that pole, second plate electrode are corresponding；
G. utilize photo etched mask technology and magnetron sputtering technique, define the electrode pattern of second plate and sputter high work function
Pd-Pt-Au alloy, as the metal level of second plate electrode, forms second Schottky contacts, thus completes multilayer anode electricity
The preparation of the GaN base Schottky diode of electrode structure；Visibly different with embodiment 1, the metal level of second plate electrode has
Part is positioned on dielectric passivation insulating barrier, forms field plate structure, is conducive to improving device surface under reverse bias condition
Electric Field Distribution, reduces peak electric field, improves the most pressure of device.
Embodiment three:
As it is shown on figure 3, this gives the multilayer anode electrode structure GaN base Schottky diode of a kind of band local doping
Device, including:
Substrate 1 is Si substrate；Nucleating layer 2 is Al0.2Ga0.8N nucleating layer；Stress and dislocation cushion 3 are involuntary doping
Al0.1Ga0.9N cushion；Charge shift layer 4 is the GaN-AlN-Al of high resistant0.3Ga0.7N hetero-junction electric-charge drift layer；Cathode electrode
5 is V-Al-Pt-Au alloy；The low work function metal of first anode electrode 6 is Ti/Au alloy-layer；Second plate electrode 7
Very thin dielectric layer 71 is SiNxVery thin dielectric layer；Dielectric passivation insulating barrier 8 is SiO2Dielectric passivation insulating barrier；Second plate electrode 7
High work-function metal layer 72 be Ni-Pd-Au alloy-layer;P-type doped gan layer 9.
The concrete technology of the preparation method of the GaN base schottky diode device of multilayer anode electrode structure in the present embodiment
Step is:
The most on a si substrate, MBE growth technology is utilized to grow the low temperature AI of 20nm successively0.2Ga0.8N nucleating layer, 3 μm
Involuntary doping Al0.1Ga0.9N cushion and by the 70nm GaN of high resistant, 1nm AlN and 20nm Al0.3Ga0.7N is constituted
GaN-AlN-Al0.3Ga0.7N hetero-junction electric-charge drift layer, and the p-type doped gan layer of 10nm, form complete device extension
Layer；
The most same as in Example 1, utilize photo etched mask technology and ICP deep etching, complete the discrete isolation of device；With reality
Execute example 1 visibly different, after completing the discrete isolation of device, formed before cathode ohmic contact, use photo etched mask technology and
ICP dry etching technology, carries out selectivity processing to epitaxial layer structure subregion, and etching depth is about 15nm, removes part
Epitaxial layer, forms the ridge structure that local is p-type doping, and carries out tubular annealing reparation etching injury under ammonia atmosphere；
C. using photo etched mask technology and magnetron sputtering technique, the cathode zone in epi-layer surface sputters V-Al-Pt-Au and closes
Gold is as cathode electrode, and 650 DEG C of short annealings form Ohmic contact in 45 seconds in a nitrogen atmosphere；
D. utilize photo etched mask technology and magnetron sputtering technique, sputter low work function in the first anode region of epi-layer surface
Ti-Au alloy as first anode metal level, form first Schottky contacts；
E. utilize electron beam evaporation technique, deposit layer of sin in epi-layer surfacexAs the very thin dielectric layer of second plate, thick
Spend about 10nm, and remove unwanted part by photo etched mask technology and ICP etching, only retain in second plate region very thin
Medium, the potential barrier as second plate electrode regulates material；
F. utilize PECVD technique, deposit one layer of SiO in epi-layer surface2Dielectric passivation insulating barrier, thickness is 1 μm, and passes through light
Carve mask technique and RIE dry etch process and remove unwanted part, expose with cathode electrode, first anode electrode, second
The window that anode electrode is corresponding；
G. utilize photo etched mask technology and magnetron sputtering technique, define the electrode pattern of second plate and sputter high work function
Ni-Pd-Au alloy, as the metal level of second plate electrode, forms second Schottky contacts, thus completes multilayer anode electricity
The preparation of the GaN base Schottky diode of electrode structure；Visibly different with embodiment 1, the very thin dielectric layer of second plate and
The metal level of second plate is positioned at above p-type doped gan layer, and under forward biased condition, electric current is mainly by the first anode, p
The doping of type local does not affect forward cut-in voltage, and under reverse bias condition, the doping of p-type local forms extra potential barrier, to leakage
Electricity has further inhibitory action, and improves the reverse voltage endurance of device.
The present invention is described by embodiment, but does not limit the invention, with reference to description of the invention, institute
Other changes of disclosed embodiment, as the professional person for this area is readily apparent that, such change should belong to
Within the scope of the claims in the present invention limit.
Claims (9)
1. the GaN base Schottky diode of a multilayer anode electrode structure, it is characterised in that: include substrate (1), epitaxial layer,
Electrode and dielectric passivation insulating barrier (8), wherein said epitaxial layer includes nucleating layer (2), stress and position on extension direction successively
Wrong cushion (3) and charge shift layer (4), described nucleating layer (2) is connected on substrate (1), and described electrode includes cathode electrode
(5), first anode electrode (6) and second plate electrode (7), described cathode electrode (5) is the cathode zone in epi-layer surface
The Ohmic contact depositing metal annealing and formed, described first anode electrode (6) is the first anode district in epi-layer surface
Area deposition low work function metal and first Schottky contacts being made up of low workfunction metal and quasiconductor that formed, described
Second plate electrode (7) is at the second plate region elder generation deposit very thin dielectric layer of epi-layer surface, redeposited high work function gold
Second Schottky contacts being made up of high-work-function metal, very thin medium and quasiconductor belonging to layer and formed, described two
Schottky contacts is collectively forming multilayer anode electrode structure, and described second plate region than first anode region in locus
On closer to cathode zone, described dielectric passivation insulating barrier (8) covers on the surface of epitaxial layer and in position corresponding to electrode
Place offers so that electrode and the extraneous window electrically connected.
The GaN base Schottky diode of multilayer anode electrode structure the most according to claim 1, it is characterised in that: described
Substrate (1) includes but not limited to Sapphire Substrate, GaN single crystal substrate, GaN-sapphire compound substrate, AlN single crystalline substrate, AlN-
Sapphire compound substrate, Si substrate.
The GaN base Schottky diode of multilayer anode electrode structure the most according to claim 1, it is characterised in that: described
Charge shift layer (4) includes but not limited to involuntary doping GaN simple substance and the GaN simple substance of N-shaped doping or GaN base hetero-junctions；Its
In, GaN base hetero-junctions is made up of channel layer and barrier layer, it is possible to provide one group or several groups two dimension for GaN base Schottky diode
Electron gas；Channel layer includes but not limited to a kind of or any several combination in GaN, AlGaN, AlN of high resistant；Barrier layer includes
But a kind of or any several combination being not limited in AlGaN, AlInN, AlN, AlInGaN material, and these materials can be with right and wrong
Deliberately doping, N-shaped doping, it is also possible to be localized p-type doping.
The GaN base Schottky diode of multilayer anode electrode structure the most according to claim 1, it is characterised in that: described
Cathode electrode (5) includes but not limited to Ti-Al alloy, Ti-Al-Ti-Au alloy, Ti-Al-Ni-Au alloy, Ti-Al-Mo-Au
Alloy, V-Al-Pt-Au alloy.
The GaN base Schottky diode of multilayer anode electrode structure the most according to claim 1, it is characterised in that: described
Low work function metal includes but not limited to a kind of or any several combination in Ti, Al, V, Ti-Au alloy.
The GaN base Schottky diode of multilayer anode electrode structure the most according to claim 1, it is characterised in that: described
High work-function metal layer includes but not limited to a kind of or any several combination in Ni, Pd, Pt, Ni-Au alloy.
The GaN base Schottky diode of multilayer anode electrode structure the most according to claim 1, it is characterised in that: described
Very thin dielectric layer includes but not limited to relatively thin SiO2、SiNx、MgO、Al2O3A kind of or any several combination in medium, and pole
The thickness of film dielectric layer is 0.1nm-10nm.
The GaN base Schottky diode of multilayer anode electrode structure the most according to claim 1, it is characterised in that: described
Dielectric passivation insulating barrier (8) includes but not limited to thicker SiO2、SiNx、Al2O3、AlN、HfO2、ZrO2One in medium or
Any several combination, and the thickness of dielectric passivation insulating barrier (8) is 50nm-1 μm.
9. a preparation method for the GaN base Schottky diode of multilayer anode electrode structure, the method is used for preparing above-mentioned
GaN base Schottky diode described in one claim, it is characterised in that comprise the following steps:
A, utilize metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) or hydride gas-phase epitaxy (HVPE)
Technology, grows the most successively for forming the nucleating layer of epitaxial layer, stress and dislocation cushion and electric charge drift
Move layer；
B, utilize photo etched mask technology and sense coupling (ICP) or chemical reaction etching (RIE) or wet-chemical
Corrosion technology, completes the discrete isolation of GaN base Schottky diode on epitaxial layer；
C, utilize photo etched mask technology and ICP or RIE or wet-chemical etching technology, the subregion of epitaxial layer is carried out selectivity
Processing, removes portion of epi layer and forms groove structure or ridge structure, and uses short annealing or tubular annealing skill if desired
Art repairs etching injury；
D, use photo etched mask technology and electron beam evaporation or thermal evaporation or magnetron sputtering technique, on the cathode chamber of epi-layer surface
Area deposition metal, and utilize short annealing or tubular annealing technology to form Ohmic contact；
E, utilize photo etched mask technology and electron beam evaporation or thermal evaporation or magnetron sputtering technique, at the first sun of epi-layer surface
Polar region area deposition low workfunction metal, forms first Schottky contacts；
F, utilize plasma enhanced chemical vapor deposition (PECVD) or ald (ALD) or electron beam evaporation or heat steam
Send out or magnetron sputtering technique, deposit one layer of very thin medium in epi-layer surface, and by photo etched mask technology and ICP or RIE or
Wet-chemical etching technique removes unwanted part, only retains very thin medium in second plate region as second plate electrode
Potential barrier regulation material；
G, utilize PECVD or ald or electron beam evaporation or thermal evaporation or magnetron sputtering technique, sink in epi-layer surface
Long-pending one layer of thicker dielectric passivation insulating barrier, and removed not by photo etched mask technology and ICP or RIE or wet-chemical etching technique
The part needed, exposes the window corresponding with negative electrode, the first anode and second plate；
H, utilize photo etched mask technology and electron beam evaporation or thermal evaporation or magnetron sputtering technique, the electrode figure of definition second plate
Shape also deposits high-work-function metal, forms second Schottky contacts, thus completes GaN base Xiao Te of multilayer anode electrode structure
The preparation of based diode.
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Application publication date: 20161012 |