CN111755530A - AlGaN/GaN-based Schottky barrier diode based on double-anode structure and manufacturing method thereof - Google Patents

AlGaN/GaN-based Schottky barrier diode based on double-anode structure and manufacturing method thereof Download PDF

Info

Publication number
CN111755530A
CN111755530A CN202010543406.XA CN202010543406A CN111755530A CN 111755530 A CN111755530 A CN 111755530A CN 202010543406 A CN202010543406 A CN 202010543406A CN 111755530 A CN111755530 A CN 111755530A
Authority
CN
China
Prior art keywords
algan
schottky
gan
work
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010543406.XA
Other languages
Chinese (zh)
Inventor
王霄
王婷婷
敖金平
徐杨
何悦
冶琼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xidian University
Original Assignee
Xidian University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xidian University filed Critical Xidian University
Priority to CN202010543406.XA priority Critical patent/CN111755530A/en
Publication of CN111755530A publication Critical patent/CN111755530A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention discloses an AlGaN/GaN-based Schottky barrier diode based on a double-anode structure and a manufacturing method thereof, belonging to the technical field of microelectronics. A high work function metal is located over the intrinsic AlGaN barrier layer and overlies the low work function metal. According to the invention, the contact between the low-work-function metal and the two-dimensional electron gas is utilized to reduce the starting voltage of the device, and the high-work-function Schottky metal inhibits the reverse electric leakage of the device and realizes high reverse breakdown voltage, so that the forward and reverse electrical characteristics of the device can be regulated and controlled.

Description

AlGaN/GaN-based Schottky barrier diode based on double-anode structure and manufacturing method thereof
Technical Field
The invention belongs to the technical field of microelectronics, relates to a structure and a processing technology of a semiconductor device, and particularly relates to a GaN-based Schottky barrier diode device based on a double-anode structure and a manufacturing method thereof.
Technical Field
The Schottky Barrier Diode (SBD) is a key unit device of a microwave rectification circuit, and determines the conversion efficiency between RF-DC signals. The wireless energy transmission technology is widely applied to power charging and energy collection of electric automobiles, wireless power distribution systems in buildings and the like.
A radio frequency-to-direct current conversion circuit, a so-called rectifier circuit, is a key unit of a receiving end of a wireless power transmission system, and the conversion efficiency of the receiving end mainly depends on the performance of a Schottky Barrier Diode (SBD) applied in the rectifier circuit, including characteristics such as a characteristic on-resistance, a junction capacitance, a breakdown voltage, and a turn-on voltage. The low on-resistance and low junction capacitance enable the device to work at high frequency, the high breakdown voltage can meet the requirement of high power, the low on-voltage can reduce power loss in a circuit and improve the rectification efficiency, and therefore the performance of the diode is required to have the characteristics of low on-resistance, low junction capacitance, high breakdown voltage and low on-voltage.
GaN, one of the representatives of the third generation semiconductor materials, has excellent properties such as wide forbidden band, strong polarization, high electron saturation velocity, high breakdown field strength and the like, and also has good chemical stability and thermal stability. Compared with a GaN-based device, the GaAs and Si-based device cannot meet the requirements of high frequency and high efficiency, and the SiC-based device has higher cost, so the GaN material is the first choice semiconductor material for preparing the Schottky diode. However, GaN-based devices still have some problems so far, and the actual values of the electrical properties of GaN-based devices are always far from the theoretical values.
Most researchers have adopted Ni as an anode metal electrode, and as they have a suitable work function and good conductivity, they have found that the electrical properties of the device, especially the forward-cut-on voltage, can be improved by changing the anode structure while trying to find a new anode material.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a GaN-based electronic device with a double-anode structure and a manufacturing method thereof, which solve the technical problems that the schottky diode in the prior art has large starting voltage and low breakdown voltage, so that the efficiency of a rectification system for transmitting a high-power signal in a microwave circuit is influenced. The method is improved on the basis of the traditional single-anode GaN-based Schottky diode by the simplest method, and is a method for improving the reverse breakdown voltage and reducing the forward starting voltage of the GaN-based SBD.
Therefore, the invention adopts the following technical means:
a gallium nitride-based Schottky barrier diode with a double-anode structure comprises a substrate and an epitaxial layer grown on the substrate, and is characterized in that an ohmic electrode and a double-anode Schottky electrode are arranged on the epitaxial layer. The epitaxial layer is sequentially provided with a substrate, a buffer layer, an intrinsic GaN channel layer and an intrinsic AlGaN barrier layer which are vertically distributed from bottom to top, and the material structure has a two-dimensional electron gas interface with high electron mobility, so that the material structure can realize larger saturation current density and microwave rectification application.
On the basis of the technical scheme, the key points of the invention are as follows:
the Schottky barrier diode is characterized in that a low-work-function Schottky electrode structure is groove-shaped, an AlGaN barrier layer right below the Schottky barrier diode is partially or completely etched, the etching depth is 1-100nm, a high-work-function Schottky electrode covers the low-work-function Schottky electrode, the area ratio of the area of the high-work-function electrode to the area of the low-work-function electrode is required to be q, q is equal to 1 and +/-infinity, the Schottky barrier diode has the beneficial effects that the low-work-function metal of the groove can reduce the starting voltage of a device, the reverse leakage of electricity is inhibited by the high-work-function Schottky electrode without the groove, and the forward and reverse electrical characteristics of the device are regulated and controlled.
Further, anode1 in the bi-anode schottky electrode is one or more combinations of low work function electrode materials (relative values), such as: titanium, aluminum, molybdenum, tungsten, tantalum, titanium nitride, molybdenum nitride, silicon molybdenum nitride, tungsten nitride, tantalum nitride, or the like; while anode2 anode is one or more combinations of high work function electrode materials (relative values), such as: nickel, palladium, gold, platinum, nickel nitride, or the like; the ohmic cathode is one or more of titanium, aluminum, nickel, gold, platinum, molybdenum, iridium, tantalum, niobium, cobalt, zirconium and tungsten. The method has the advantages that the Schottky metals with different work functions have different depletion effects on the two-dimensional electron gas, so that the rectification characteristic of the device is regulated and controlled, the rectification speed of the device is improved, and the application of high-power transmission signals is realized.
Further, according to the above technical idea, the composition and material types of each layer in the structure are as follows:
s1: the substrate material is one of the following materials: si, SiC, sapphire;
s2: the thickness of the intrinsic GaN channel layer is 0-1000 nm;
s3: the thickness of the intrinsic AlGaN barrier layer is 0-100 nm;
s4: the ohmic cathode is one or more of titanium, aluminum, nickel, gold, platinum, molybdenum, iridium, tantalum, niobium, cobalt, zirconium and tungsten;
s5: in the double anode schottky electrode, as shown in fig. 1, anode1 anode is one or more combinations of low work function electrode materials (relative values), for example: titanium, aluminum, molybdenum, tungsten, tantalum, TiN, MoN, MoSiN, WN, TaN, or the like; while anode2 anode is one or more combinations of high work function electrode materials (relative values), such as: nickel, palladium, gold, platinum, nickel nitride, and the like.
The invention also provides a preparation method of the double-Schottky-anode GaN-based SBD device, which comprises the following specific steps:
(1) sequentially growing a buffer layer, an intrinsic GaN channel layer and an intrinsic AlGaN barrier layer on a substrate according to certain growth conditions;
(2) photoetching the grown AlGaN/GaN material, defining an active area, and isolating the active area of the device by using an etching method;
(3) photoetching a table AlGaN/GaN material of a prepared active region to define a cathode ohmic contact electrode region, preparing ohmic contact metal through electron beam evaporation or magnetron sputtering, stripping, and finally performing rapid thermal annealing (500-1000 ℃ for 10-1000s) in a nitrogen environment to form ohmic contact;
(4) after cathode ohmic contact is formed, further defining a low-work-function Schottky electrode area through photoetching, preparing a low-work-function electrode material through electron beam evaporation or magnetron sputtering, and then carrying out stripping process treatment on a device to form a low-work-function anode, wherein the etching depth of the AlGaN barrier layer is 1-100 nm;
(5) after the low-work-function Schottky anode is formed, an anode high-work-function Schottky contact area is formed through photoetching, high-work-function Schottky metal is prepared through electron beam evaporation or magnetron sputtering, and then the device is subjected to stripping process treatment to form a double-Schottky anode structure;
(6) and after the device is preliminarily finished, finally, annealing the whole wafer in a nitrogen environment to finish the preparation of the whole device.
The invention has the following advantages:
(1) the device utilizes the double-anode structure, so that the electric field distribution of the anode high work function Schottky metal part is uniform in the whole reverse breakdown voltage of the device, and the breakdown characteristic of the device is improved. The low work function schottky anode portion increases the average potential of the electrons such that the turn-on voltage of the device is reduced.
(2) From the perspective of device structure design, the invention provides a new idea for improving the breakdown voltage of the GaN-based SBD device and reducing the forward starting voltage.
Drawings
The principles of the device and its structure according to the present invention will be explained in more detail and further exemplary embodiments of the invention will be described with reference to the accompanying drawings, in which:
FIG. 1 is an overall cross-sectional schematic view of a double anode GaN-based SBD device;
fig. 2(a), (b), (c) are comparative examples of this patent, (a) and (b) are single anode structure SBD devices of metal Ni and metal W, respectively, (c) is a recessed high work function metal and non-recessed low work function metal dual anode SBD device structure, and (d) is a dual anode SBD device structure of the present invention. In the following nomenclature, structure (a), structure (b), structure (c), and structure (d) are named, respectively.
Fig. 3(a) and (b) are reverse and forward IV characteristic curves of structure (a), structure (b), and structure (c), respectively.
Fig. 4(a) and (b) are reverse and forward IV characteristic curves of structure (a), structure (b), and structure (d), respectively.
Detailed Description
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments and implementations thereof are shown, the described embodiments being merely illustrative of one form of implementation of the invention, and the invention should not be construed as limited to the embodiments set forth herein. Based on this embodiment, the scope of the present invention is fully conveyed to those skilled in the art.
Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings.
In the low-work-function electrode and the high-work-function electrode, the high and low refer to the relative sizes of the work functions of the metal with double anodes.
Example 1
In this embodiment, the device structure sequentially includes, from bottom to top, a substrate, a buffer layer, a GaN intrinsic layer, an AlGaN intrinsic layer, a double schottky anode, and an ohmic cathode. The manufacturing method comprises the following specific steps:
(1) firstly, growing a buffer layer on a substrate by MOCVD or MBE, then growing an intrinsic GaN channel layer, and growing an intrinsic AlGaN barrier layer on the intrinsic GaN channel layer, so as to finish the epitaxial growth of the AlGaN/GaN material;
(2) on the basis of the structure, an active region is defined by photoetching, and isolation between devices is formed by etching.
(3) Photoetching a cathode ohmic contact electrode in an active area region, preparing the cathode electrode through electron beam evaporation and stripping processes, and performing rapid thermal annealing (890 ℃ for 30s) in a nitrogen environment to form ohmic contact;
(4) defining a low-work-function Schottky electrode region by photoetching, etching off a part of AlGaN barrier layer (the depth is 10nm), preparing a low-work-function electrode material (Ti/Au is 50/50nm) by magnetron sputtering, and carrying out a stripping process to form a low-work-function Schottky anode;
(5) photoetching to form an anode high-work-function Schottky contact area, preparing a high-work-function Schottky anode material (Ni/Au is 50/50nm) by magnetron sputtering, and carrying out a stripping process to form a double Schottky anode structure;
(6) based on the structure shown in FIG. 1, the whole wafer is annealed in a nitrogen atmosphere
(400 ℃ 1800s) to finish the preparation of the whole device.
Compared with the conventional single-anode structure, the GaN SBD device with the novel double-anode structure prepared through the steps has the advantages that the starting voltage is reduced (0.5V), and the breakdown voltage is improved (1.4 kV).
Example 2
In this embodiment, the device sequentially comprises a substrate, a buffer layer, a GaN intrinsic layer, an AlGaN intrinsic layer, a double Schottky anode, and an Ouie Zernime Zernike's cathode from bottom to top. The manufacturing method comprises the following specific steps:
(1) firstly, growing a buffer layer on a substrate by MOCVD or MBE, then growing an intrinsic GaN channel layer, and growing an intrinsic AlGaN barrier layer on the intrinsic GaN channel layer, so as to finish the epitaxial growth of the AlGaN/GaN material;
(2) on the basis of the structure, an active region is defined by photoetching, and isolation between devices is formed by etching.
(3) Photoetching a cathode ohmic contact electrode in an active area region, preparing the cathode electrode through electron beam evaporation and stripping processes, and performing rapid thermal annealing (890 ℃ for 30s) in a nitrogen environment to form ohmic contact;
(4) on the basis of the structure, defining a low-work-function Schottky electrode region by photoetching, etching off a part of AlGaN barrier layer (the depth is 30nm), preparing a low-work-function electrode material (W/Au is 50/50nm) by magnetron sputtering, and carrying out a stripping process to form a low-work-function Schottky anode;
(5) on the basis of the structure, an anode high-work-function Schottky contact area is formed by photoetching, a high-work-function Schottky anode material (Ni/Au is 50/50nm) is prepared by magnetron sputtering, and a stripping process is carried out to form a double-Schottky anode structure;
(6) on the basis of the structure shown in fig. 1, the whole wafer is annealed in a nitrogen atmosphere (400 ℃ for 1800 seconds), and the preparation of the whole device is completed.
Compared with the conventional single-anode structure, the GaN SBD device with the novel double-anode structure prepared through the steps has the advantages that the starting voltage is reduced (0.25V), and the breakdown voltage is improved (1.4 kV).
Comparative example 1:
the comparative example provides a double anode schottky barrier diode, which is different from the structure of the present application in that the double anode schottky barrier diode does not have a groove-type low work function schottky electrode structure, that is, the AlGaN barrier layer right below the double anode schottky barrier diode is not partially or completely etched, the AlGaN barrier layer is partially etched below the high work function schottky electrode, and the high work function schottky electrode is located below the low work function schottky electrode. The AlGaN barrier layer is etched by 10nm, and the groove anode is positioned above the two-dimensional electron gas. The ratio of the area of the high work function metal anode to the area of the low work function metal anode is designed to be 2:1, as shown in fig. 2(c), and fig. 2(a) and (b) are respectively a single anode device structure of Ni (work function of 5.15eV) and W (work function of 4.55eV), as compared with (c). The results of simulating the electrical characteristics in the forward and reverse directions are shown in fig. 3.
Simulation results show that: the breakdown voltage of the device of the double-anode structure of the comparative example is between that of the Ni single anode and that of the W single anode, and meanwhile, the starting voltage is consistent with that of the W single anode device and is smaller than that of the Ni single anode device, but the effect same as that of the reduction of the starting voltage cannot be achieved.
Comparative example 2:
the present comparative example provides two kinds of single anode schottky barrier diodes (W single anode and Ni single anode) with different work functions, as shown in fig. 2(a) and (b), which are different from the structure of the present application in that the AlGaN barrier layer directly below it is not etched, while the etching depth of the structure of the present invention is 10nm, as shown in fig. 2(d), the ratio of the area of the high work function metal anode to the area of the low work function metal anode is designed to be 2:1, and the results of simulating the electrical characteristics in the forward and reverse directions are shown in fig. 4.
Simulation results show that: the breakdown voltage of structure (d) of the present application is consistent with that of a Ni metal single anode SBD device, while the turn-on voltage is 0.4V lower than that of a W metal single anode SBD device.

Claims (10)

1. An AlGaN/GaN-based Schottky barrier diode based on a double-anode structure sequentially comprises a substrate, a buffer layer, an intrinsic GaN channel layer, an intrinsic AlGaN barrier layer, a double-Schottky anode and an ohmic cathode from top to bottom; the double Schottky anode is positioned on one side of the intrinsic AlGaN barrier layer, and the ohmic cathode is positioned on the other side of the intrinsic AlGaN barrier layer;
the method is characterized in that: the double Schottky anode comprises a low-work-function Schottky anode structure and a high-work-function Schottky anode structure, the high-work-function Schottky anode structure covers the low-work-function Schottky anode structure, the low-work-function Schottky anode structure is arranged in a groove formed by partially etching or completely etching the intrinsic AlGaN barrier layer, and the etching depth is 1-100 nm.
2. The AlGaN/GaN based schottky barrier diode based on a dual anode structure as claimed in claim 1, wherein the high work function schottky anode area is larger than the low work function schottky anode area with an area ratio of q, q e (1, + ∞).
3. The AlGaN/GaN based schottky barrier diode according to claim 1, wherein the low work function schottky anode material is one or more alloys of ti, al, mo, w, ta, tin, mo, si-mo-n, w, tan, etc.
4. The AlGaN/GaN based schottky barrier diode according to claim 1, wherein the high work function schottky anode material is one or more alloys of nickel, palladium, gold, platinum, nickel nitride, etc.
5. The AlGaN/GaN based schottky barrier diode according to claim 1, wherein the ohmic cathode material is one or more alloys of ti, al, ni, au, pt, mo, w, ir, ta, nb, co, zr, etc.
6. A preparation method of AlGaN/GaN-based Schottky barrier diode based on double anode structure is characterized in that: the method comprises the following steps:
(1) growing a buffer layer, an intrinsic GaN channel layer and an intrinsic AlGaN barrier layer on a substrate in sequence according to the structure of claim 1;
(2) photoetching the AlGaN/GaN material, defining an active region, and isolating the active region by using an etching method;
(3) photoetching is carried out on the AlGaN/GaN material of the active area, a cathode ohmic contact electrode area is defined, ohmic contact metal is prepared and stripped through electron beam evaporation or magnetron sputtering, and finally, rapid thermal annealing is carried out in a nitrogen environment to form ohmic contact;
(4) defining a low work function Schottky electrode area by photoetching: partially or completely etching the intrinsic AlGaN barrier layer to the etching depth of 1-100nm, preparing a low-work-function electrode material by using electron beam evaporation or magnetron sputtering, and finally carrying out stripping treatment to form a low-work-function Schottky anode structure;
(5) and photoetching to form an anode high-work-function Schottky contact region: preparing a high-work-function Schottky anode structure by using electron beam evaporation or magnetron sputtering, and finally carrying out stripping treatment to form a double Schottky anode structure;
(6) and (4) annealing treatment is carried out in a nitrogen environment, and the preparation is finished.
7. The method of claim 6, wherein the AlGaN/GaN-based Schottky barrier diode comprises: the step (3) comprises the following substeps:
step 3.1: depositing a titanium layer, an aluminum layer, nickel or titanium layer and a gold layer on the gallium nitride epitaxial layer obtained in the step (2) in sequence;
step 3.2: stripping the metal formed outside the ohmic electrode area to obtain a metal layer deposited in the ohmic area in sequence;
step 3.3: and carrying out thermal annealing treatment in a nitrogen atmosphere to generate an ohmic electrode on the gallium nitride epitaxial layer.
8. The method of manufacturing the AlGaN/GaN based schottky barrier diode based on the double anode structure according to claim 6 or 7, wherein: the annealing condition in the step (3) is 500-1000 ℃ for 10-1000 s.
9. The method of claim 6, wherein the AlGaN/GaN-based Schottky barrier diode comprises: the method for depositing the metal in the step (3) is a magnetron sputtering method or an electron beam evaporation method, and the method for depositing the metal in the steps (4) and (5) is a magnetron sputtering method or an electron beam evaporation method.
10. The method of claim 6, wherein the AlGaN/GaN-based Schottky barrier diode comprises: the step (4) of removing the 1-100nm intrinsic AlGaN barrier layer can be realized by wet etching, electrochemical etching, dry etching and a combination of the dry etching and the wet etching.
CN202010543406.XA 2020-06-15 2020-06-15 AlGaN/GaN-based Schottky barrier diode based on double-anode structure and manufacturing method thereof Pending CN111755530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010543406.XA CN111755530A (en) 2020-06-15 2020-06-15 AlGaN/GaN-based Schottky barrier diode based on double-anode structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010543406.XA CN111755530A (en) 2020-06-15 2020-06-15 AlGaN/GaN-based Schottky barrier diode based on double-anode structure and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN111755530A true CN111755530A (en) 2020-10-09

Family

ID=72676053

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010543406.XA Pending CN111755530A (en) 2020-06-15 2020-06-15 AlGaN/GaN-based Schottky barrier diode based on double-anode structure and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN111755530A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112903755A (en) * 2021-02-24 2021-06-04 太原理工大学 Carbon dioxide sensor and preparation method thereof
CN113436970A (en) * 2021-06-24 2021-09-24 中国科学技术大学 Preparation method of double-barrier Schottky diode
CN114843226A (en) * 2021-02-02 2022-08-02 北京大学 Method for integrating MIS-HEMT device and GaN hybrid anode diode and application
CN115274865A (en) * 2022-09-26 2022-11-01 晶通半导体(深圳)有限公司 Schottky diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332504A (en) * 2014-07-08 2015-02-04 中山大学 GaN-based heterojunction schottky diode device and preparing method thereof
CN106024914A (en) * 2016-06-30 2016-10-12 广东省半导体产业技术研究院 GaN-based schottky diode having hybrid anode electrode structure and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332504A (en) * 2014-07-08 2015-02-04 中山大学 GaN-based heterojunction schottky diode device and preparing method thereof
CN106024914A (en) * 2016-06-30 2016-10-12 广东省半导体产业技术研究院 GaN-based schottky diode having hybrid anode electrode structure and preparation method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114843226A (en) * 2021-02-02 2022-08-02 北京大学 Method for integrating MIS-HEMT device and GaN hybrid anode diode and application
CN114843226B (en) * 2021-02-02 2024-05-17 北京大学 Method for integrating MIS-HEMT device and GaN hybrid anode diode and application
CN112903755A (en) * 2021-02-24 2021-06-04 太原理工大学 Carbon dioxide sensor and preparation method thereof
CN113436970A (en) * 2021-06-24 2021-09-24 中国科学技术大学 Preparation method of double-barrier Schottky diode
CN113436970B (en) * 2021-06-24 2024-03-29 中国科学技术大学 Preparation method of double-barrier Schottky diode
CN115274865A (en) * 2022-09-26 2022-11-01 晶通半导体(深圳)有限公司 Schottky diode

Similar Documents

Publication Publication Date Title
CN111755530A (en) AlGaN/GaN-based Schottky barrier diode based on double-anode structure and manufacturing method thereof
CN104362181A (en) GaN hetero-junction diode device and method for manufacturing same
CN109873034B (en) Normally-off HEMT power device for depositing polycrystalline AlN and preparation method thereof
US12087855B2 (en) Vertical UMOSFET device with high channel mobility and preparation method thereof
CN104851921A (en) GaN-based Schottky diode of vertical structure, and manufacture method thereof
CN102097492A (en) Hetetrostructure field effect diode and manufacturing method thereof
CN107978642A (en) A kind of GaN base heterojunction diode and preparation method thereof
CN115360235B (en) Gallium nitride Schottky barrier diode and manufacturing method thereof
US20230352558A1 (en) High electron mobility transistor, preparation method, and power amplifier/switch
CN114899227A (en) Enhanced gallium nitride-based transistor and preparation method thereof
CN109950323A (en) The III group-III nitride diode component and preparation method thereof for the superjunction that polarizes
CN114530492A (en) Lateral gallium nitride schottky diode structure with hybrid high-k dielectric field plate
CN108831932B (en) Transverse MIS-Schottky mixed anode diode of gallium nitride
CN115775730A (en) Quasi-vertical structure GaN Schottky diode and preparation method thereof
CN113658859B (en) Preparation method of gallium nitride power device
CN113394096B (en) HEMT device and self-isolation method and manufacturing method thereof
CN112614890A (en) All-vertical field effect transistor based on transverse Schottky source tunneling junction and method
CN216849947U (en) Lateral gallium nitride schottky diode structure with hybrid high-k dielectric field plate
CN113299766B (en) GaN quasi-vertical structure diode and preparation method thereof
CN111048584B (en) High-linearity gallium nitride HBT radio frequency power device and preparation method thereof
CN117219666B (en) Gallium oxide heterogeneous thyristor with double trigger gate electrodes and preparation method thereof
CN114582962B (en) Variable channel AlGaN/GaN HEMT structure and preparation method thereof
CN114400259B (en) Junction barrier Schottky diode
CN116936645B (en) P-channel Schottky barrier diode and manufacturing method thereof
CN113707712B (en) High-voltage-resistance silicon-based gallium nitride power semiconductor device and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20201009