CN111048584B - High-linearity gallium nitride HBT radio frequency power device and preparation method thereof - Google Patents
High-linearity gallium nitride HBT radio frequency power device and preparation method thereof Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 100
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010953 base metal Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 19
- 229920005591 polysilicon Polymers 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 29
- 229910002704 AlGaN Inorganic materials 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000001259 photo etching Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000004151 rapid thermal annealing Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
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- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
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- 150000002902 organometallic compounds Chemical class 0.000 claims description 2
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- 230000015556 catabolic process Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Abstract
The invention provides a high-linearity gallium nitride HBT radio-frequency power device and a preparation method thereof, belonging to the field of radio-frequency power devices. The invention provides a high-linearity gallium nitride HBT radio frequency power device, which comprises: a layer of epitaxial material; a secondary collector layer; a current collecting layer; a silicon nitride layer; a collector contact hole metal layer; a P-GaN-based layer; an emitter layer; a P-type polysilicon layer; and a base metal layer. The invention adopts mature P-type Si semiconductor in the P-GaN extrinsic base region to realize self-ballasting structure, and simultaneously utilizes the polycrystalline silicon interconnecting wire RbFor ballast resistance, polysilicon interconnection lines are used to effectively shorten the extrinsic base region. Therefore, the invention can reduce the nonlinear component in the device I-V by using the negative feedback structure, and can reduce the RC delayTime, significantly increase the device height fT、fmaxA high frequency parameter.
Description
Technical Field
The invention relates to a radio frequency power device, in particular to a high-linearity gallium nitride HBT radio frequency power device and a preparation method thereof, and belongs to the field of radio frequency power devices.
Background
The GaN third generation semiconductor has wider forbidden band width (3.4eV), high breakdown field strength (3MV/cm) and very high electron mobility (1500 cm) at room temperature2V · s), extremely high peak electron velocity (3 × 10)7cm/s) and high two-dimensional electron gas concentration (2X 10)13cm2) AlGaN/GaN HEMTs power devices are gradually replacing RF-LDMOS and GaAs power devices and becoming the first choice microwave power devices of T/R components in phased array radars. On the other hand, with the urgent need of 5G communication for broadband transmission of massive data, AlGaN/GaN HEMTs devices operating in a high frequency band and having high power density advantage will be greatly developed in civil wireless communication, but the former also faces the difficulty of high linear transmission of high frequency modulation signals and the like in 5G communication application and needs to break through.
In recent years, researchers focus on intensive research on high-linearity radio-frequency power devices from the aspects of materials, devices, applications and the like of AlGaN/GaN HEMTs. In terms of materials, the transconductance G is linearized by changing Al components to form a master-slave composite channelm. Researchers have also proposed new AlGaN/GaN HEMTs based on FinFET structures to address current saturation R between source and gateaccess,gsA major problem, but the fin structure causes degradation of the rf power performance.
In addition, for a long time, bipolar devices have the advantages of good linearity, high current gain and the like, and are always the main device structures of silicon-based microwave power devices, and with the development of microwave device technologies, surface-type microwave power devices conforming to moore's law become a trend, and are used for developing microwave AlGaN/GaN HEMTs power devices for 4G-LTE application RF-LDMOS and phased array radar application, but the device structures have the technical difficulty that the power density is not favorably improved.
In recent years, AlGaN/GaN HEMT microwave power devices have been successfully applied to phased arrays, but as the devices are gradually exposed to 5G applications, the devices have the disadvantages of low linearity, no coverage of mobile terminals by applications, and the like.
Disclosure of Invention
The present invention is made to solve the above problems, and an object of the present invention is to provide a high linearity gallium nitride HBT radio frequency power device in which a self-ballasting structure is realized by using a mature P-type Si semiconductor in a P-GaN extrinsic base region, and a method for manufacturing the same.
The invention provides a high-linearity gallium nitride HBT radio frequency power device, which is characterized by comprising the following components: the epitaxial material layer is made of non-uniformly doped GaN on Sapphire; a sub-collector layer disposed above the epitaxial material layer and doped with n+-a GaN material; the collector layer is arranged above the secondary collector layer and is made of unintentionally doped GaN materials; the silicon nitride layer is arranged above the collector layer and is provided with a pair of collector contact holes symmetrically arranged along the central line of the silicon nitride layer and a pair of epitaxial windows symmetrically arranged on the inner sides of the pair of collector contact holes along the central line of the silicon nitride layer; the collector contact hole metal layer is filled in the collector contact hole; the P-gallium nitride base layer is adaptive to the size of the epitaxial window and is filled in the epitaxial window; an emitter layer disposed above the P-GaN base layer and including N arranged sequentially from bottom to top+-an AlGaN emitter layer and an emitter metal layer; a P-type polysilicon layer disposed over the silicon nitride layer between the pair of epitaxial windows; and a base metal layer disposed over the P-type polysilicon layer.
In the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the high-linearity gallium nitride HBT radio-frequency power device also has the following characteristics: wherein the thickness of the epitaxial material layer is 1.5-2.5 μm, the thickness of the secondary collector layer is 0.5-1.5 μm, the thickness of the collector layer is 0.25-0.75 μm, the line width of the epitaxial window is 0.5-1.5 μm, and P-nitrogen is addedThe thickness of the gallium nitride base layer is 60nm-80nm, N+-the thickness of the AlGaN emitter layer is 40nm-60nm, the line width of the emitter layer is 0.25 μm-0.75 μm, and the thickness of the P-type polycrystalline silicon layer is 0.1 μm-0.2 μm.
In the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the high-linearity gallium nitride HBT radio-frequency power device also has the following characteristics: the emitter metal layer comprises a titanium layer with the thickness of 15nm-25nm, an aluminum layer with the thickness of 110nm-130nm, a nickel layer with the thickness of 50nm-60nm and a gold layer with the thickness of 60nm-70nm which are arranged in sequence from bottom to top.
In the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the high-linearity gallium nitride HBT radio-frequency power device also has the following characteristics: the collector contact hole metal layer comprises a titanium layer with the thickness of 15nm-25nm and an aluminum layer with the thickness of 110nm-130nm, which are arranged in sequence from bottom to top.
In the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the high-linearity gallium nitride HBT radio-frequency power device also has the following characteristics: wherein, the base metal lead layer comprises a titanium layer with the thickness of 15nm-25nm and an aluminum layer with the thickness of 110nm-130nm which are arranged in sequence from bottom to top.
The invention also provides a preparation method of the high-linearity gallium nitride HBT radio-frequency power device, which is characterized in that: the method comprises the following steps: s1, sequentially depositing highly doped n on the non-uniformly doped GaN on Sapphire by using metal organic compound chemical vapor deposition method+-GaN and unintentionally doped GaN, forming in sequence a secondary collector layer and a collector layer; s2, depositing SiN on the collector layer by using a plasma enhanced chemical vapor deposition method to form a silicon nitride layer; s3, etching the surface of the silicon nitride layer by using a buffer fluoride etching solution to form an epitaxial window; s4, sequentially extending P-GaN and N in the extension window+AlGaN, thereby forming a P-GaN base layer and N+-an AlGaN emitter layer; s5, forming a silicon nitride layer and N+Depositing metal above the AlGaN emitter layer, photoetching, opening an emitter window, etching the metal and the silicon nitride layer by adopting a reactive ion etching method, and etching and stopping on the surface of the P-gallium nitride base layer to form an emitter; s6, carrying out rapid thermal treatment, forming ohmic contact of the emitter, carrying out photoetching, and opening an outer base region window; s7, sputtering P-type alpha-Si by physical vapor deposition, stripping and removing photoresist, annealing in a furnace, and converting the P-type alpha-Si into P-type polycrystalline silicon to form a P-type polycrystalline silicon layer; s8, photoetching the SiN dielectric layer to the upper surface of the collector layer to form a collector contact hole, and photoetching the SiN dielectric layer to the upper surface of the P-type polycrystalline silicon to form a base metal hole; s9, filling the collector contact hole and the base metal hole with electron beam evaporation metal to form a collector contact hole metal layer and a base metal layer respectively; and S10, stripping and removing the photoresist, and performing rapid thermal annealing to form ohmic contact between the collector contact hole metal layer and the base metal layer, thereby obtaining the high-linearity gallium nitride HBT radio-frequency power device.
In the preparation method of the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the preparation method also has the following characteristics: wherein a high doping n is deposited+Doping concentration of-GaN is 2.5X 1018cm-3-3.5×1018cm-3。
In the preparation method of the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the preparation method also has the following characteristics: wherein the doping concentration of the P-type alpha-Si is 0.5 multiplied by 1020cm-3-1.5 ×1020cm-3。
In the preparation method of the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the preparation method also has the following characteristics: wherein, in the step S7, the furnace annealing temperature is 800-820 ℃, and the furnace annealing time is 20-30 min.
In the preparation method of the high-linearity gallium nitride HBT radio-frequency power device provided by the invention, the preparation method also has the following characteristics: wherein the temperature of the rapid thermal annealing in the step S10 is 800-850 ℃, and the time of the rapid thermal annealing is 45-55S.
Action and Effect of the invention
According to the high-linearity gallium nitride HBT radio-frequency power device, the P-GaN extrinsic base region adopts a mature P-type Si semiconductor to realize a self-ballasting structure, and a polycrystalline silicon interconnection line R is utilized at the same timebIs a ballast resistor. Therefore, the present invention can reduce the non-linear component in the device I-V using this negative feedback structure.
According to the bookAccording to the high-linearity gallium nitride HBT radio-frequency power device, the extrinsic base region is effectively shortened by adopting the polycrystalline silicon interconnection line, so that the RC delay time can be reduced, and the f height of the device is obviously increasedT、fmaxA high frequency parameter.
Drawings
Fig. 1 is a schematic structural diagram of a high linearity HBT radio frequency power device in an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an intermediate product obtained in step 1 of the method for manufacturing a high-linearity gallium nitride HBT radio-frequency power device in the embodiment of the present invention;
fig. 3 is a schematic structural diagram of an intermediate product obtained in step 2 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 4 is a schematic structural diagram of an intermediate product obtained in step 3 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 5 is a schematic structural diagram of an intermediate product obtained in step 4 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 6 is a schematic structural diagram of an intermediate product obtained in step 5 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 7 is a schematic structural diagram of an intermediate product obtained in step 6 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 8 is a schematic structural diagram of an intermediate product obtained in step 7 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
fig. 9 is a schematic structural diagram of an intermediate product obtained in step 8 of the method for manufacturing a high-linearity HBT radio-frequency power device according to the embodiment of the present invention;
figure 10 is a schematic diagram of the application of a high linearity HBT radio frequency power device in a circuit in an embodiment of the present invention;
fig. 11 is a schematic diagram of the energy level of the high linearity HBT radio frequency power device along the X-axis direction in the embodiment of the present invention.
Detailed Description
In order to make the technical means, the creation features, the achievement purposes and the effects of the invention easy to understand, the invention is specifically described below by combining the embodiment and the attached drawings.
< example >
Fig. 1 is a schematic structural diagram of a high linearity HBT radio frequency power device in an embodiment of the present invention.
As shown in fig. 1, the high linearity HBT radio frequency power device comprises: the epitaxial material layer, the secondary collector layer, the silicon nitride layer, the collector contact hole metal layer, the P-gallium nitride base layer, the emitter layer, the P-type polycrystalline silicon layer and the base metal layer.
The epitaxial material layer was made of non-uniformly doped GaN on Sapphire with a thickness of 2 μm.
A subcollector layer (Subcollerctor layer) disposed over and in contact with the epitaxial material layer and formed of highly doped n+-GaN material with a thickness of 1 μm. Deposition of highly doped n+Doping concentration of GaN 3X 1018cm-3。
The collector layer (collector layer) is arranged above the secondary collector layer, is in contact with the secondary collector layer, is made of an unintentionally doped GaN material, and has a thickness of 0.5 μm.
The silicon nitride layer is arranged above and in contact with the collector layer and is provided with a pair of collector contact holes symmetrically arranged along the center line of the silicon nitride layer and a pair of epitaxial windows symmetrically arranged on the inner sides of the pair of collector contact holes along the center line of the silicon nitride layer. Wherein the line width L of the epitaxial windowbase＝1.0μm。
And the collector contact hole metal layer is filled in the collector contact hole and has the thickness of 140nm, and consists of a titanium layer with the thickness of 20nm and an aluminum layer with the thickness of 120nm which are sequentially arranged from bottom to top.
The P-gallium nitride base layer is matched with the size of the epitaxial window and is filled in the epitaxial window, the thickness is 70nm, and the line width is 1 mu m.
The emitter layer comprises N arranged from bottom to top+-an AlGaN emitter layer and an emitter metal layer,disposed over the P-GaN base layer, wherein N+-the AlGaN emitter layer is in contact with the P-gallium nitride base layer. Line width L of emitter layeremitter＝0.5μm。
N+-AlGaN emitter layer consisting of N+AlGaN material, arranged above and in contact with the P-GaN base layer, having a thickness of 50nm and a line width of 0.5 μm, and located at the center of the emitting base layer.
An emitter metal layer arranged on N+-AlGaN emitter layer, with N+An AlGaN emitter layer contact, having a thickness of 260nm and a line width of 0.5 μm, consisting of, from bottom to top, a titanium layer having a thickness of 20nm, an aluminum layer having a thickness of 120nm, a nickel layer having a thickness of 55nm, and a gold layer having a thickness of 65 nm.
The P-type polysilicon layer is disposed over and in contact with the silicon nitride layer between the pair of epitaxial windows and has a thickness of 1.5 μm.
The base metal layer is arranged above the P-type polycrystalline silicon layer and is in contact with the P-type polycrystalline silicon layer, the thickness of the base metal layer is 140nm, and the base metal layer consists of a titanium layer with the thickness of 20nm and an aluminum layer with the thickness of 120nm which are arranged in sequence from bottom to top.
The preparation method of the high-linearity gallium nitride HBT radio-frequency power device provided by the embodiment comprises the following steps:
s1, sequentially depositing highly doped n above the non-uniformly doped GaN on Sapphire by using a Metal Organic Chemical Vapor Deposition (MOCVD) method+GaN (doping concentration 3X 10)18cm-3) And unintentionally doping GaN to form a secondary collector layer and a collector layer in sequence to obtain an intermediate product as shown in fig. 2;
s2, SiN is deposited above the current collecting layer by using a plasma enhanced chemical vapor deposition method (PECVD method), and a silicon nitride layer with the thickness of 0.12 mu m is formed, so that an intermediate product shown in the figure 3 is obtained;
s3, determining the position of the epitaxial window by using a photoetching method, and then etching the surface of the silicon nitride layer by using a buffered fluoride etching solution (BOE) to form the epitaxial window to obtain an intermediate product shown in figure 4;
s4, sequentially epitaxially growing 70nm of P-GaN and 50nm of N in the epitaxial window+-AlGaN，Thereby forming a P-GaN base layer and N+AlGaN emitter layer, wherein the linewidth L of the epitaxial windowbase1 μm to give an intermediate product as shown in figure 5;
s5, forming a silicon nitride layer and N+Depositing metal on the AlGaN emitter layer, depositing a titanium layer of 20nm, an aluminum layer of 120nm, a nickel layer of 55nm and a gold layer of 65nm from bottom to top in sequence, coating photoresist on the surface of the gold layer, photoetching, opening an emitter window, etching the metal and the silicon nitride layer by adopting a reactive ion etching method (RIE method), etching and stopping on the surface of the P-gallium nitride base layer, removing the photoresist to form an emitter, and forming the line width L of the emitteremitter0.5 μm, an intermediate product as shown in fig. 6 was obtained;
s6, performing Rapid Thermal Processing (RTP) on the intermediate product shown in the figure 6, wherein the temperature of the rapid thermal processing is 850 ℃, the time of the rapid thermal processing is 50S, forming ohmic contact of an emitter, then coating photoresist on the upper surface, performing photoetching, and opening the window of the outer base region to obtain the intermediate product shown in the figure 7;
s7, sputtering (PVD) by physical vapor deposition on the window of the outer base region to form alpha-Si with the thickness of 0.15 mu mP (the doping concentration is 1 multiplied by 10)20cm-3) Stripping off the photoresist, annealing at 810 ℃ for 25min, converting the P-type alpha-Si into P-type polycrystalline silicon to form a P-type polycrystalline silicon layer, and obtaining an intermediate product shown in figure 8;
s8, coating photoresist on the upper surface of the intermediate product shown in the figure 8, photoetching an SiN dielectric layer to the upper surface of the current collecting layer to form a collector contact hole, and photoetching to the upper surface of the P-type polycrystalline silicon to form a base metal hole to obtain the intermediate product shown in the figure 9;
s9, filling a titanium layer with the thickness of 20nm and an aluminum layer with the thickness of 120nm into the collector contact hole and the base metal hole by adopting electron beam evaporation, and respectively forming a collector contact hole metal layer and a base metal layer;
and S10, stripping and removing the photoresist, and performing Rapid Thermal Annealing (RTA), wherein the temperature of the rapid thermal annealing is 825 ℃, the time of the rapid thermal annealing is 50S, so that the collector contact hole metal layer and the base metal layer form ohmic contact, and the high-linearity gallium nitride HBT radio frequency power device shown in the figure 1 is obtained.
Fig. 10 is a schematic diagram of the application of the high linearity HBT radio frequency power device in the circuit according to the embodiment of the present invention.
As shown in FIG. 10, R of HBT is formed using silicon-based polysi as wiringbThe method realizes the blending of Si and GaN processes, and well plays a role in ballasting, which obviously improves the negative feedback and nonlinearity of the HBT. The Polysi wiring layer obviously reduces the intrinsic region of the device, the intrinsic region is positioned on the dielectric layer SiN, so that C, B electrode isolation is realized, and the high-frequency characteristic of the device is obviously improved.
Fig. 11 is a schematic diagram of the energy level of the high linearity HBT radio frequency power device along the X-axis direction in the embodiment of the present invention.
As shown in FIG. 11, since Si has a band gap of about 1/3 that of GaN wide band gap semiconductor, it is used as a P-type base, and the P-Si (with a band gap of 1.12eV) is in contact with P-GaN to form a heterojunction valence band difference Δ Ev1Is larger than the valence band difference delta E of the P-GaN (forbidden band width of 3.4eV)/P-GaN heterojunctionv2That is, P-Si has a lower valence band potential than P-GaN, so holes move more easily from P-GaN to P-Si.
Effects and effects of the embodiments
According to the high-linearity gallium nitride HBT radio-frequency power device related to the embodiment, the P-GaN extrinsic base region adopts mature P-type Si semiconductor to realize the self-ballasting structure, and meanwhile, the polycrystalline silicon interconnection line R is utilizedbIs a ballast resistor. Therefore, this embodiment can reduce the nonlinear component in the device I-V using this negative feedback structure.
According to the high-linearity gallium nitride HBT radio-frequency power device related to the embodiment, the extrinsic base region is effectively shortened by adopting the polycrystalline silicon interconnection line, so that the RC delay time can be reduced, and the f height of the device is obviously improvedT、fmaxA high frequency parameter.
The above embodiments are preferred examples of the present invention, and are not intended to limit the scope of the present invention.
Claims (10)
1. A high linearity gallium nitride HBT radio frequency power device, comprising:
the epitaxial material layer is made of non-uniformly doped GaN on Sapphire;
a sub-collector layer disposed above the epitaxial material layer and doped with n+-a GaN material;
the collector layer is arranged above the secondary collector layer and is made of unintentionally doped GaN materials;
the silicon nitride layer is arranged above the collector layer and is provided with a pair of collector contact holes symmetrically arranged along the central line of the silicon nitride layer and a pair of epitaxial windows symmetrically arranged on the inner sides of the pair of collector contact holes along the central line of the silicon nitride layer;
a collector contact hole metal layer filled in the collector contact hole;
the P-gallium nitride base layer is adaptive to the size of the epitaxial window and is filled in the epitaxial window;
an emitter layer disposed above the P-GaN base layer and including N arranged sequentially from bottom to top+-an AlGaN emitter layer and an emitter metal layer;
a P-type polysilicon layer disposed over the silicon nitride layer between the pair of epitaxial windows; and
and the base metal layer is arranged above the P-type polycrystalline silicon layer.
2. The high linearity gallium nitride HBT radio frequency power device of claim 1, wherein:
wherein the thickness of the epitaxial material layer is 1.5-2.5 μm,
the thickness of the secondary collecting layer is 0.5-1.5 μm,
the thickness of the collector layer is 0.25-0.75 μm,
the line width of the epitaxial window is 0.5-1.5 μm,
the thickness of the P-gallium nitride base layer is 60nm-80nm,
said N is+-the AlGaN emitter layer has a thickness of 40nm to 60nm,
the line width of the emitter layer is 0.25-0.75 μm,
the thickness of the P-type polycrystalline silicon layer is 0.1-0.2 μm.
3. The high linearity gallium nitride HBT radio frequency power device of claim 1, wherein:
the emitter metal layer comprises a titanium layer with the thickness of 15nm-25nm, an aluminum layer with the thickness of 110nm-130nm, a nickel layer with the thickness of 50nm-60nm and a gold layer with the thickness of 60nm-70nm which are sequentially arranged from bottom to top.
4. The high linearity gallium nitride HBT radio frequency power device of claim 1, wherein:
the collector contact hole metal layer comprises a titanium layer with the thickness of 15nm-25nm and an aluminum layer with the thickness of 110nm-130nm, which are sequentially arranged from bottom to top.
5. The high linearity gallium nitride HBT radio frequency power device of claim 1, wherein:
the base metal lead layer comprises a titanium layer with the thickness of 15nm-25nm and an aluminum layer with the thickness of 110nm-130nm, which are arranged in sequence from bottom to top.
6. A method for preparing a high-linearity gallium nitride HBT radio-frequency power device, which is used for preparing the high-linearity gallium nitride HBT radio-frequency power device as claimed in any one of claims 1-5, and is characterized by comprising the following steps:
s1, sequentially depositing highly doped n on the non-uniformly doped GaN on Sapphire by using metal organic compound chemical vapor deposition method+-GaN and unintentionally doped GaN, forming in sequence a secondary collector layer and a collector layer;
s2, depositing SiN on the collector layer by using a plasma enhanced chemical vapor deposition method to form a silicon nitride layer;
s3, etching the surface of the silicon nitride layer by using a buffer fluoride etching solution to form an epitaxial window;
s4, sequentially epitaxially growing P-GaN and N in the epitaxial window+-AlGaN，Thereby forming a P-GaN base layer and N+-an AlGaN emitter layer;
s5, forming a silicon nitride layer and N+Depositing metal above the AlGaN emitter layer, photoetching, opening an emitter window, etching the metal and the silicon nitride layer by adopting a reactive ion etching method, and etching to stay on the surface of the P-gallium nitride base layer to form an emitter;
s6, carrying out rapid thermal treatment, forming ohmic contact of the emitter, carrying out photoetching, and opening an outer base region window;
s7, sputtering P-type alpha-Si by physical vapor deposition, stripping and removing photoresist, annealing in a furnace, converting the P-type alpha-Si into P-type polycrystalline silicon, and forming the P-type polycrystalline silicon layer;
s8, photoetching the SiN dielectric layer to the upper surface of the collector layer to form a collector contact hole, and photoetching the SiN dielectric layer to the upper surface of the P-type polycrystalline silicon to form a base metal hole;
s9, filling the collector contact hole and the base metal hole with electron beam evaporation metal to form a collector contact hole metal layer and a base metal layer respectively;
and S10, stripping and removing the photoresist, and performing rapid thermal annealing to form ohmic contact between the collector contact hole metal layer and the base metal layer, thereby obtaining the high-linearity gallium nitride HBT radio-frequency power device.
7. The method for manufacturing a high linearity gallium nitride HBT radio frequency power device according to claim 6,
wherein the deposition is highly doped with n+Doping concentration of-GaN is 2.5X 1018cm-3-3.5×1018cm-3。
8. The method for manufacturing a high linearity gallium nitride HBT radio frequency power device according to claim 6,
wherein the doping concentration of the P-type alpha-Si is 0.5 multiplied by 1020cm-3-1.5×1020cm-3。
9. The method for manufacturing a high linearity gallium nitride HBT radio frequency power device according to claim 6,
wherein, in the step S7, the furnace annealing temperature is 800-820 ℃, and the furnace annealing time is 20-30 min.
10. The method for manufacturing a high linearity gallium nitride HBT radio frequency power device according to claim 6,
wherein the temperature of the rapid thermal annealing in the step S10 is 800-850 ℃, and the time of the rapid thermal annealing is 45-55S.
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