CN103219376A - Gallium nitride radio-frequency power device and preparation method thereof - Google Patents
Gallium nitride radio-frequency power device and preparation method thereof Download PDFInfo
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- CN103219376A CN103219376A CN2013100981455A CN201310098145A CN103219376A CN 103219376 A CN103219376 A CN 103219376A CN 2013100981455 A CN2013100981455 A CN 2013100981455A CN 201310098145 A CN201310098145 A CN 201310098145A CN 103219376 A CN103219376 A CN 103219376A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 73
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 238000005275 alloying Methods 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 31
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910001260 Pt alloy Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QNHZQZQTTIYAQM-UHFFFAOYSA-N chromium tungsten Chemical compound [Cr][W] QNHZQZQTTIYAQM-UHFFFAOYSA-N 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention belongs to the technical field of high-electronic-mobility devices, and particularly relates to a gallium nitride radio-frequency power device and a preparation method of the gallium nitride radio-frequency power device. According to the gallium nitride radio-frequency power device and the preparation method of the gallium nitride radio-frequency power device, earlier grid technology is used for preparing the gallium nitride radio-frequency power device, grid side walls are used for achieving self-alignment of the position of a grid and the position of a source electrode, and drifting of product parameters is reduced. Meanwhile, due to the fact that the grid is protected by a passivation layer, the source electrode and a drain electrode can be formed through alloying technology after the grid is formed, contact resistance of source and drain is reduced, and electrical properties of the gallium nitride radio-frequency power device are improved.
Description
Technical field
The invention belongs to the device with high electron mobility field, relate to a kind of radio-frequency power device, be specifically related to a kind of gallium nitride radio-frequency power device and preparation method thereof.
Background technology
(High Electron Mobility Transistors HEMT) is generally believed it is one of the most rising high-speed electronic components to High Electron Mobility Transistor.Owing to have ultrahigh speed, low-power consumption, low noise characteristics (especially at low temperatures), can greatly satisfy the specific demand on the purposes such as very-high speed computer and signal processing, satellite communication, so the HEMT device is subjected to paying attention to widely.As microwave of new generation and millimetric wave device, the HEMT device is in frequency, gain or is all showing impayable advantage aspect the efficient.Through 10 years of development, the HEMT device has possessed excellent microwave, millimeter wave characteristic, has become the main devices of the microwave and millimeter wave low noise amplifier in the field such as satellite communication, radio astronomy of 2～100 GHz.Simultaneously, the HEMT device also is the core component that is used for making microwave mixer, oscillator and broadband travelling-wave amplifier.
Gallium nitrate based HEMT radio-frequency power device adopts back grid technique manufacturing mostly at present, and the technological process of its manufacturing mainly comprises: at first make source, drain electrode.Photoetching ohmic contact window utilizes electron beam evaporation to form multi-layer electrode structure, and stripping technology forms source, drain contact, uses rapid thermal annealing (RTA) equipment, forms good source under 900 ℃, 30 Sec argon shield conditions, leaks ohmic contact.Make the zone that need etch away then by lithography, and use reactive ion beam etching (RIBE) (RIE) equipment, feed boron chloride, the etching step.Utilize photoetching, electron beam evaporation and stripping technology to form the Schottky barrier gate metal at last once more.But along with dwindling of device size, the method for this back grid technique is difficult to realize that the grid of HEMT device aims at the accurate of source electrode, drain locations, causes the drift of product parameters.
Summary of the invention
The objective of the invention is to propose a kind of gallium nitride radio-frequency power device and preparation method thereof,, reduce the drift of product parameters, strengthen the electric property of gallium nitride radio-frequency power device with the grid of realization HEMT device and the autoregistration of source electrode position.
A kind of gallium nitride radio-frequency power device proposed by the invention comprises:
The aluminum gallium nitride resilient coating, gallium nitride channel layer, the aluminum gallium nitride separator that on substrate, form successively;
The gate dielectric layer that on described aluminum gallium nitride separator, forms;
The gate stack district that forms on described gate dielectric layer comprises grid and is positioned at passivation layer on the grid;
The first grid side wall that forms in the both sides in described gate stack district;
On described aluminum gallium nitride separator, drain electrode that a side of described grid forms and the source electrode that forms in the non-drain side of described grid;
Only in described gate stack district near a side of drain electrode second grid side wall in formation between described first grid side wall and the drain electrode.
Among the present invention, the field plate that links to each other with described source electrode that on described first grid side wall, forms near drain electrode one side, and on the orientation of device, described field plate extends on described second grid side wall and the described passivation layer that is positioned on the grid.
Among the present invention, also proposed described gallium nitride radio-frequency power preparation of devices method, concrete steps are as follows:
The resilient coating of deposit aluminum gallium nitride successively, gallium nitride channel layer, aluminum gallium nitride separator on substrate;
As etching barrier layer, etching aluminum gallium nitride separator, gallium nitride channel layer, aluminum gallium nitride resilient coating remove photoresist afterwards to be formed with the source region successively with photoresist;
Deposit ground floor insulation film on the exposed surface of formed structure;
Deposit ground floor conductive film, second layer insulation film successively on formed ground floor insulation film;
Carry out photoetching, the position in the gate stack district define device of developing;
With photoresist as etching barrier layer, etch away the second layer insulation film and the ground floor conductive film that expose successively, remove photoresist afterwards, the ground floor conductive film that is not etched away and second layer insulation film form the grid of device and are positioned at passivation layer on the grid;
The three-layer insulated film of deposit on the exposed surface of formed structure, and the formed three-layer insulated film of etching forms the first grid side wall in the both sides in gate stack district;
Deposit one deck polysilicon on the exposed surface of formed structure, and formed polysilicon returned quarter, wherein, only the polysilicon of source electrode position is not etched away;
The 4th layer of insulation film of deposit on the exposed surface of formed structure, and formed the 4th floor insulation film of etching forms the second grid side wall in the gate stack district near a side that drains;
Etch away remaining polysilicon, and continue to etch away the ground floor insulation film that exposes;
Form figure by photoetching process, define the position of source electrode and drain electrode respectively;
Form the source electrode and the drain electrode of device by lift-off technology and alloying technology;
Form the field plate link to each other with source electrode on the first grid side wall near drain electrode one side, and on the orientation of device, this field plate is to the second grid side wall and be positioned on the passivation layer on the grid and extend.
Aforesaid gallium nitride radio-frequency power preparation of devices method, described ground floor insulation film is silica, silicon nitride, hafnium oxide or is alundum (Al that described second layer insulation film, three-layer insulated film and the 4th layer of insulation film are silica or are silicon nitride.
Aforesaid gallium nitride radio-frequency power preparation of devices method, described ground floor conductive film is the alloy that contains chromium or nickeliferous or tungstenic.
The present invention adopts first grid technique to prepare gallium nitride radio-frequency power device, utilizes grid curb wall to realize the autoregistration of grid and source electrode position, has reduced the drift of product parameters.Simultaneously,, make source electrode and drain electrode after grid forms, to form, reduced source, drain contact resistance, strengthened the electric property of gallium nitride radio-frequency power device by alloying technology because grid is passivated layer protection.
Description of drawings
Fig. 1 is the profile of an embodiment of gallium nitride radio-frequency power device disclosed in this invention.
Fig. 2 is an embodiment of the radio-frequency power device array be made up of gallium nitride radio-frequency power device disclosed in this invention, and wherein, Fig. 2 b is the vertical view schematic diagram of this radio-frequency power device array, and Fig. 2 a is that structure shown in Fig. 2 b is along the profile of AA direction.
Fig. 3 to Figure 12 is the preparation method's of the radio-frequency power device array as shown in Figure 2 disclosed in this invention process chart of an embodiment.
Embodiment
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment, in the drawings, for convenience of description, amplifies or dwindled the thickness in layer and zone, shown in size do not represent actual size.Although the actual size that reflects device that these figure can not entirely accurate, their zones that still has been complete reflection and form mutual alignment between the structure, particularly form between the structure up and down and neighbouring relations.
Fig. 1 is an embodiment of gallium nitride radio-frequency power device proposed by the invention, and it is the profile along this device channel length direction.As shown in Figure 1, the gallium nitride resilient coating 201 that substrate comprises substrate 200 and forms in substrate 200 is formed with aluminum gallium nitride resilient coating 202, gallium nitride channel layer 203 and aluminum gallium nitride separator 204 successively on substrate.On aluminum gallium nitride separator 204, be formed with gate dielectric layer 205, on gate dielectric layer 205, be formed with the gate stack district of device, the passivation layer 207 that comprises grid 206 and on grid 206, form.
Be formed with first grid side wall 208 in the both sides in gate stack district.
On aluminum gallium nitride separator 204, drain electrode 211 that a side of grid 206 forms and the source electrode 212 that forms in the non-drain side of grid 206.
Only be formed with second grid side wall 209 between 211 near a side of drain electrode 211 and at first grid side wall 208 with draining in the gate stack district.
Also be formed with the field plate 214 of device on first grid side wall 208 near a side of drain electrode 211, field plate 214 links to each other with source electrode 212, and on the orientation of device, field plate 214 extends on second grid side wall 209 and passivation layer 207.
On drain electrode 211, also be formed with the contact 213 that is used for drain electrode 211 drain electrodes that are connected with outer electrode.
Can also form gallium nitride radio-frequency power device array by a plurality of gallium nitride radio-frequency power devices of the present invention, Fig. 2 is an embodiment of the gallium nitride radio-frequency power device array be made up of gallium nitride radio-frequency power device as shown in Figure 1 disclosed in this invention, wherein, Fig. 2 b is the vertical view schematic diagram of this gallium nitride radio-frequency power device array, and Fig. 2 a is that structure shown in Fig. 2 b is along the profile of AA direction.
The preparation method of gallium nitride radio-frequency power device proposed by the invention and the gallium nitride radio-frequency power device array be made up of gallium nitride radio-frequency power device proposed by the invention is consistent, and below what narrated is the technological process for preparing an embodiment of gallium nitride radio-frequency power device array structure as shown in Figure 2.
At first, as shown in Figure 3, deposit forms the aluminum gallium nitride separator 204 that gallium nitride channel layer 203, thickness that aluminum gallium nitride resilient coating 202, thickness that thickness is about 40 nanometers is about 40 nanometers are about 22 nanometers successively on substrate, deposit one deck photoresist and mask, exposure, development define the position of active area on aluminum gallium nitride separator 204 then, etch away the aluminum gallium nitride separator 204 that exposes, gallium nitride channel layer 203, aluminum gallium nitride resilient coating 202 successively to be formed with the source region with photoresist as etching barrier layer then, divest photoresist then.Wherein, Fig. 3 a by the vertical view schematic diagram of formation structure, Fig. 3 b is that structure shown in Fig. 3 a is along the profile of AA direction.
The gallium nitride resilient coating 201 that substrate described in the present embodiment comprises substrate 200 and forms in substrate 200, substrate 200 can or be an alundum (Al for silicon, carborundum.
Next, deposit forms ground floor insulation film 205 successively on the exposed surface of formed structure, ground floor conductive film and second layer insulation film, and on the second layer insulation film deposit one deck photoresist and mask, exposure, development defines the position in the gate stack district of device, etch away the second layer insulation film and the ground floor conductive film of exposure then successively as etching barrier layer with photoresist, ground floor conductive film that is not etched away and second layer insulation film form the grid 206 of device respectively and are positioned at passivation layer 207 on the grid, divest behind the photoresist as shown in Figure 4, wherein Fig. 4 a by the vertical view schematic diagram of formation structure, Fig. 4 b is that structure shown in Fig. 4 a is along the profile of AA direction.
Ground floor insulation film 205 can or be an alundum (Al for silica, silicon nitride, hafnium oxide, and as the gate dielectric layer of device, its thickness is preferably 8 nanometers.Grid 206 can be for containing the alloy of chromium or nickeliferous or tungstenic, such as being nickel billon, chromium tungsten alloy, Polarium, platinum alloy, nickel platinum alloy or being the NiPdAu alloy.Passivation layer 207 can or be a silicon nitride for silica.
Next, deposit forms three-layer insulated film on the exposed surface of formed structure, then formed three-layer insulated film is gone back to the both sides of carving with in the gate stack district and forms first grid side wall 208, as shown in Figure 5.Grid curb wall 208 can or be a silicon nitride for silica.
Next, deposit one deck polysilicon membrane 210 on the exposed surface of formed structure, as shown in Figure 6.Then formed polysilicon membrane 210 is returned quarter, as shown in Figure 7.
In gallium nitride radio-frequency power device array, by the distance between control grid and the grid, when polysilicon membrane 210 was carried out etching, the polysilicon of the source electrode position that only is defined was not etched away, and the polysilicon membrane of other position is etched away.
Next, deposit forms the 4th layer of insulation film on the exposed surface of formed structure, and formed the 4th floor insulation film of etching is at a side (near a side of drain electrode) the formation second grid side wall 209 in gate stack district, as shown in Figure 8.Then, continue to etch away remaining polysilicon membrane 210, and continue to etch away the ground floor insulation film 205 that exposes, to expose aluminum gallium nitride separator 204, as shown in Figure 9.
Next, deposit one deck photoresist and mask, exposure, development form figure on the exposed surface of formed structure, define the position of source electrode and drain electrode respectively, as shown in figure 10.Figure 10 by the vertical view schematic diagram of formation structure, the position of the frame of broken lines 301 expression figures that form.
Next, on aluminum gallium nitride separator 204, form the source electrode 212 of device and drain 211 by lift-off technology and alloying technology, as shown in figure 11.Its process is: at first deposit layer of conductive film, such as being titanium/aluminium/nickel/billon, remove the conductive film that is deposited on the photoresist by lift-off technology then, and keep the conductive film that is not deposited on the photoresist, form good source, drain contact by high-temperature thermal annealing again.
At last, photoresist that deposit one deck is new on the exposed surface of formed structure and mask, exposure, shape shadow define the position of device field plate, source electrode and drain electrode, follow deposit second layer conductive film, second layer conductive film can or be the nickel billon for titanium-aluminium alloy, nickel alumin(i)um alloy, nickel platinum alloy.Remove the second layer conductive film that is deposited on the photoresist by lift-off technology then, and reservation is not deposited on the second layer conductive film on the photoresist, on first grid side wall, to form the field plate 214 of device near 211 1 sides that drain, field plate 214 links to each other with source electrode 212, the contact 213 of the drain electrode that forming simultaneously drains is connected with outer electrode, as shown in figure 12.
As mentioned above, under the situation that does not depart from spirit and scope of the invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the instantiation described in the specification.
Claims (5)
1. gallium nitride radio-frequency power device comprises:
The aluminum gallium nitride resilient coating, gallium nitride channel layer, the aluminum gallium nitride separator that on substrate, form successively;
And, the gate dielectric layer that on described aluminum gallium nitride separator, forms;
It is characterized in that, also comprise:
The gate stack district that forms on described gate dielectric layer comprises grid and is positioned at passivation layer on the grid;
The first grid side wall that forms in the both sides in described gate stack district;
On described aluminum gallium nitride separator, drain electrode that a side of described grid forms and the source electrode that forms in the non-drain side of described grid;
Only one side of close drain electrode, and the second grid side wall that between described first grid side wall and drain electrode, forms in described gate stack district.
2. gallium nitride radio-frequency power device as claimed in claim 1, it is characterized in that, the field plate that links to each other with described source electrode that on described first grid side wall, forms near drain electrode one side, and on the orientation of device, described field plate extends on described second grid side wall and the described passivation layer that is positioned on the grid.
3. gallium nitride radio-frequency power preparation of devices method as claimed in claim 1 is characterized in that concrete steps are as follows:
The resilient coating of deposit aluminum gallium nitride successively, gallium nitride channel layer, aluminum gallium nitride separator on substrate;
As etching barrier layer, etching aluminum gallium nitride separator, gallium nitride channel layer, aluminum gallium nitride resilient coating remove photoresist afterwards to be formed with the source region successively with photoresist;
Deposit ground floor insulation film on the exposed surface of formed structure;
Deposit ground floor conductive film, second layer insulation film successively on formed ground floor insulation film;
Carry out photoetching, the position in the gate stack district define device of developing;
With photoresist as etching barrier layer, etch away the second layer insulation film and the ground floor conductive film that expose successively, remove photoresist afterwards, the ground floor conductive film that is not etched away and second layer insulation film form the grid of device and are positioned at passivation layer on the grid;
The three-layer insulated film of deposit on the exposed surface of formed structure, and the formed three-layer insulated film of etching forms the first grid side wall in the both sides in gate stack district;
Deposit one deck polysilicon on the exposed surface of formed structure, and formed polysilicon returned quarter, wherein, only the polysilicon of source electrode position is not etched away;
The 4th layer of insulation film of deposit on the exposed surface of formed structure, and formed the 4th floor insulation film of etching forms the second grid side wall in the gate stack district near a side that drains;
Etch away remaining polysilicon, and continue to etch away the ground floor insulation film that exposes;
Form figure by photoetching process, define the position of source electrode and drain electrode respectively;
Form the source electrode and the drain electrode of device by lift-off technology and alloying technology;
Form the field plate link to each other with source electrode on the first grid side wall near drain electrode one side, and on the orientation of device, this field plate is to the second grid side wall and be positioned on the passivation layer on the grid and extend.
4. gallium nitride radio-frequency power preparation of devices method as claimed in claim 3, it is characterized in that, described ground floor insulation film is silica, silicon nitride, hafnium oxide or is alundum (Al that described second layer insulation film, three-layer insulated film and the 4th layer of insulation film are silica or are silicon nitride.
5. gallium nitride radio-frequency power preparation of devices method as claimed in claim 3 is characterized in that, described ground floor conductive film is the alloy that contains chromium, nickeliferous or tungstenic.
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| CN201310098145.5A CN103219376B (en) | 2013-03-25 | 2013-03-25 | Gallium and preparation method thereof |
| US14/651,992 US20160013304A1 (en) | 2013-03-25 | 2014-03-25 | A radio frequency power device for implementing asymmetric self-alignment of the source, drain and gate and the production method thereof |
| PCT/CN2014/074011 WO2014154125A1 (en) | 2013-03-25 | 2014-03-25 | Radio-frequency power device for realizing source-drain gate asymmetrical self-alignment and manufacturing method |
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| CN201310098145.5A CN103219376B (en) | 2013-03-25 | 2013-03-25 | Gallium and preparation method thereof |
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| CN103779398A (en) * | 2014-01-20 | 2014-05-07 | 西安电子科技大学 | Groove gate AlGaN/GaN HEMT device structure with source field plate and manufacturing method thereof |
| CN103779406A (en) * | 2014-01-20 | 2014-05-07 | 西安电子科技大学 | Depletion mode insulated gate AlGaN/GaN device structure with added source field plate and manufacturing method thereof |
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| CN105575802A (en) * | 2015-12-10 | 2016-05-11 | 中国电子科技集团公司第五十五研究所 | Manufacturing method of low-parasitic parameter aluminum gallium nitride compound/gallium nitride high-mobility transistor |
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| CN112838130A (en) * | 2021-01-04 | 2021-05-25 | 西安交通大学 | Sapphire-based GaN quasi-vertical Schottky diode reverse leakage improvement method and Schottky diode |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014154125A1 (en) * | 2013-03-25 | 2014-10-02 | 复旦大学 | Radio-frequency power device for realizing source-drain gate asymmetrical self-alignment and manufacturing method |
| CN103779398A (en) * | 2014-01-20 | 2014-05-07 | 西安电子科技大学 | Groove gate AlGaN/GaN HEMT device structure with source field plate and manufacturing method thereof |
| CN103779406A (en) * | 2014-01-20 | 2014-05-07 | 西安电子科技大学 | Depletion mode insulated gate AlGaN/GaN device structure with added source field plate and manufacturing method thereof |
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| CN105575802A (en) * | 2015-12-10 | 2016-05-11 | 中国电子科技集团公司第五十五研究所 | Manufacturing method of low-parasitic parameter aluminum gallium nitride compound/gallium nitride high-mobility transistor |
| CN105575802B (en) * | 2015-12-10 | 2018-04-24 | 中国电子科技集团公司第五十五研究所 | The manufacture method of low parasitic parameter aluminum gallium nitride compound/gallium nitride high mobility transistor |
| CN111048584A (en) * | 2019-12-23 | 2020-04-21 | 复旦大学 | High-linearity gallium nitride HBT radio frequency power device and preparation method thereof |
| CN111048584B (en) * | 2019-12-23 | 2021-05-11 | 复旦大学 | High-linearity gallium nitride HBT radio frequency power device and preparation method thereof |
| CN112838130A (en) * | 2021-01-04 | 2021-05-25 | 西安交通大学 | Sapphire-based GaN quasi-vertical Schottky diode reverse leakage improvement method and Schottky diode |
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