CN113436970A - Preparation method of double-barrier Schottky diode - Google Patents
Preparation method of double-barrier Schottky diode Download PDFInfo
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- CN113436970A CN113436970A CN202110707635.5A CN202110707635A CN113436970A CN 113436970 A CN113436970 A CN 113436970A CN 202110707635 A CN202110707635 A CN 202110707635A CN 113436970 A CN113436970 A CN 113436970A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000002105 nanoparticle Substances 0.000 claims abstract description 15
- 238000004151 rapid thermal annealing Methods 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims description 41
- 229910002601 GaN Inorganic materials 0.000 claims description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 16
- 229910002842 PtOx Inorganic materials 0.000 claims description 6
- 239000002082 metal nanoparticle Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
Abstract
The present disclosure provides a method for manufacturing a double-barrier schottky diode, including: preparing an epitaxial layer on a substrate; growing a metal oxide film on the epitaxial layer to serve as a high-barrier Schottky; forming a metal oxide nanoparticle layer on the metal oxide film by using rapid thermal annealing; preparing a metal layer to cover the metal oxide nano particle layer to obtain a low-barrier Schottky; and preparing ohmic contact on the back of the substrate to finish the preparation of the double-barrier Schottky diode. The double-barrier Schottky diode prepared by the method can effectively solve the technical problems that the Schottky diode in the prior art is difficult to simultaneously reduce the turn-on voltage and the reverse leakage current and the like.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, in particular to a preparation method of a double-barrier Schottky diode.
Background
The power loss of a power diode device is an important parameter in practical applications, and in order to achieve the minimum power loss, the three aspects of the on-resistance, the turn-on voltage and the reverse leakage current of the device should be reduced. SBD (Schottky Barrier Diode) is widely used in a circuit as a rectifying device manufactured by using a metal-semiconductor junction principle in which a metal is in contact with a semiconductor. An ideal SBD should have zero turn-on voltage drop and zero reverse leakage current. However, in practical applications, the on-state voltage drop and the reverse leakage current of the SBD are directly related to SBH (Schottky barrier height, i.e. barrier height of metal-semiconductor contact interface). The reverse leakage current of the Schottky diode can be effectively reduced by selecting a higher SBH, but a higher forward turn-on voltage can be caused; while selecting a lower SBH results in a lower turn-on voltage but results in a higher reverse leakage current. Higher turn-on voltage and reverse leakage current mean more energy is lost.
Therefore, how to balance the reduction of the turn-on voltage and the reduction of the reverse leakage current is an urgent technical issue to be solved.
Disclosure of Invention
Technical problem to be solved
Based on the above problems, the present disclosure provides a method for manufacturing a double-barrier schottky diode, so as to solve the technical problems that the schottky diode in the prior art is difficult to simultaneously reduce the turn-on voltage and the reverse leakage current.
(II) technical scheme
The present disclosure provides a method for manufacturing a double-barrier schottky diode, including: preparing an epitaxial layer on a substrate; growing a metal oxide film on the epitaxial layer to serve as a high-barrier Schottky; forming a metal oxide nanoparticle layer on the metal oxide film by using rapid thermal annealing; preparing a metal layer to cover the metal oxide nano particle layer to obtain a low-barrier Schottky; and preparing ohmic contact on the back of the substrate to finish the preparation of the double-barrier Schottky diode.
According to an embodiment of the present disclosure, the metal oxide is selected from oxides of Ni, Au, Pt, Cu, Mo, Ag or W.
According to an embodiment of the present disclosure, the metal oxide is PtOx。
According to an embodiment of the present disclosure, the metal layer is made of a material selected from Ni, Au, Pt, Cu, Mo, Ag, or W.
According to the embodiment of the disclosure, an ohmic contact is prepared by growing Ti/Al/Ni/Au on the back surface of the substrate.
According to the embodiment of the disclosure, the preparation method of the double-barrier Schottky diode further comprises the following steps:
growing a metal film on the epitaxial layer to serve as a low-barrier Schottky; forming a metal nanoparticle layer on the metal film by using rapid thermal annealing; and preparing a metal oxide layer to cover the metal nano particle layer to obtain the high-barrier Schottky.
According to the embodiment of the disclosure, the preparation method of the double-barrier Schottky diode further comprises the following steps: and preparing a Pt metal film layer on the surface of the epitaxial layer.
According to an embodiment of the present disclosure, the substrate is a gallium nitride substrate.
According to an embodiment of the present disclosure, the epitaxial layer is a gallium nitride epitaxial layer.
According to the embodiment of the present disclosure, the thickness of the Pt metal thin film layer is 2 nm.
(III) advantageous effects
According to the technical scheme, the preparation method of the double-barrier Schottky diode has at least one or part of the following beneficial effects:
(1) when forward biased, the low barrier Ni schottky is turned on at a lower voltage, so the turn-on voltage of the structure will be substantially the same as that of a Ni-GaN schottky diode. When PtO is reachedxWhen the voltage is turned on, the double Schottky is simultaneously conducted, so that the on-state resistance is not obviously reduced;
(2) PtO due to high potential barrier when reverse biasedxThe reverse leakage of the low barrier Ni is pinched off. Therefore the reverse leakage of the double barrier schottky diode will sum up to PtOx-GaN schottky diode by one amountA stage;
(3) due to PtOxThe GaN Schottky diode has very good high-temperature working characteristics, and the double-barrier Schottky diode also has good application prospect at high temperature.
Drawings
Fig. 1 is a schematic view of a device after an epitaxial layer is formed on a substrate in a method for forming a double barrier schottky diode according to an embodiment of the present disclosure.
Fig. 2 is a schematic view of a device after a metal oxide film is grown on the epitaxial layer in the method for manufacturing a double barrier schottky diode according to the embodiment of the present disclosure.
Fig. 3 is a schematic view of a device after a metal oxide nanoparticle layer is formed on the metal oxide thin film by using rapid thermal annealing in the method for manufacturing a double-barrier schottky diode according to the embodiment of the disclosure.
Fig. 4 is a schematic diagram of a device after a Ni/Au layer is prepared to cover the metal oxide nanoparticle layer to obtain a low barrier schottky in the method for preparing a double barrier schottky diode according to the embodiment of the disclosure.
Fig. 5 is a schematic view of the whole device after Ti/Al/Ni/Au is grown on the back surface of the substrate as ohmic contact in the method for manufacturing the double barrier schottky diode according to the embodiment of the disclosure.
Fig. 6 is a schematic view of an overall device after a Pt metal thin film layer is first prepared on the surface of an epitaxial layer and then subsequent operations are completed in the method for preparing a double barrier schottky diode according to the embodiment of the present disclosure.
Fig. 7 is a schematic flow chart of a method for manufacturing a double barrier schottky diode according to an embodiment of the present disclosure.
Fig. 8 is a schematic flow chart of a method for manufacturing a double barrier schottky diode according to another embodiment of the present disclosure.
Fig. 9 is a schematic flow chart of a method for manufacturing a double barrier schottky diode according to yet another embodiment of the present disclosure.
Detailed Description
The invention provides a preparation method of a double-barrier Schottky diode, which combines the advantages of high and low barriers, prepares the wide-bandgap semiconductor double-barrier Schottky diode by a simple method for forming a high-low double-barrier GaN SBD, and realizes the advantage of maintaining smaller reverse leakage current while having lower starting voltage. The method fully utilizes the temperature characteristic of the high-barrier noble metal oxide PtO, the PtO forms nano particles on the surface of the GaN through annealing, and then a layer of low-barrier metal Ni is evaporated and plated on the GaN, so that the PtO-GaN and Ni-GaN high-low double barriers are formed on the surface of the GaN.
In carrying out the present disclosure, the inventors have discovered that there is a trade-off between forward and reverse characteristics in a single schottky barrier device that cannot be minimized at the same time. For example, for a high barrier schottky contact, the reverse leakage of the device will decrease, but the forward turn-on voltage will also increase accordingly; for a low-barrier Schottky contact, the device has the defects of large reverse leakage current and low breakdown voltage. The Schottky Barrier Height (SBH) therefore plays a decisive role in the operating characteristics of the schottky diode (SBD). Gallium nitride (GaN) has been widely studied as a third generation semiconductor material based on which high power schottky diodes are being developed. The schottky barrier height of a gan diode plays a decisive role in the rectifying performance of the diode. The schottky barrier height is affected by the metal work function and interface defects, etc. The Schottky metal under investigation is generally selected from Ni, Au, Pt, Cu, Mo, Ag, W and oxides of the above metals, and generally the metals are in contact with GaN to form relatively low SBH, while the oxidized metals such as PtOxThe work function of the metal is higher, and relatively higher SBH can be formed between the metal and the GaN. In the prior art, the edge leakage of the diode is reduced, but the actually used device is generally large in area, and the edge leakage occupation ratio in the total leakage is small, so that the effect of reducing the leakage current is relatively limited. According to the Schottky contact structure, the large number of nanoscale double-barrier diodes in the Schottky contact can effectively reduce the body leakage of the Schottky diode, so that the Schottky contact structure has an obvious effect on reducing the overall leakage and has practical significance.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
In an embodiment of the present disclosure, a method for manufacturing a double barrier schottky diode is provided, which is shown in fig. 1 to 7, and includes:
operation S1: preparing an epitaxial layer on a substrate;
in the embodiment of the present disclosure, as shown in fig. 1, a gallium nitride substrate and a gallium nitride epitaxial layer are taken as an example for explanation.
Operation S2: growing a metal oxide film on the epitaxial layer to serve as a high-barrier Schottky;
in the disclosed embodiment, PtO is grown by magnetron sputtering as shown in FIG. 2xThe description will be given by way of example of a high barrier schottky.
Operation S3: forming a metal oxide nanoparticle layer on the metal oxide film by using rapid thermal annealing;
in the embodiment of the present disclosure, as shown in fig. 3, the metal oxide is annealed to form a metal oxide nanoparticle layer uniformly distributed, so that leakage current can be effectively reduced in a device with a limited area, and the device can also work normally at a high temperature.
Operation S4: and preparing a metal layer to cover the metal oxide nano particle layer to obtain the low-barrier Schottky.
In the embodiment of the present disclosure, as shown in fig. 4, a Ni/Au layer is grown by an electron beam evaporation method, and covers the metal oxide nanoparticle layer and between the metal oxide nanoparticles to form a low barrier schottky. The low work function metal can improve the forward characteristic of the device and reduce the turn-on voltage and the turn-on resistance.
Operation S5: and preparing an ohmic contact on the back surface of the substrate.
In the embodiment of the present disclosure, as shown in fig. 5, a Ti/Al/Ni/Au layer is grown on the back surface of the gallium nitride substrate as an ohmic contact, and the fabrication of the double barrier schottky diode is completed.
According to the disclosed embodiments, the present disclosure is directed to schottky diodes formed of wide bandgap semiconductors and high work function noble metal oxides, but the same effect is also achieved for other wide bandgap semiconductor devices having schottky contacts.
According to the embodiments of the present disclosure, the thickness of the high work function noble metal oxide film, the annealing temperature and time, etc. may be adjusted according to the actual application, and are not specifically limited herein.
The order of deposition of the metal or metal oxide of the high and low barrier schottky can also be adjusted according to process requirements according to embodiments of the present disclosure.
According to an embodiment of the present disclosure, as shown in fig. 8, annealing a low work function metal to form nanoparticles and then regenerating a long high work function noble metal oxide may also form a nano-double barrier schottky diode. For example, the method for manufacturing a double barrier schottky diode according to the embodiment of the present disclosure may further include:
operation S2': growing a metal film on the epitaxial layer to serve as a low-barrier Schottky;
operation S3': forming a metal nanoparticle layer on the metal film by using rapid thermal annealing;
operation S4': and preparing a metal oxide layer to cover the metal nano particle layer to obtain the high-barrier Schottky.
According to the embodiment of the present disclosure, as shown in fig. 6 and 9, the method for manufacturing a double barrier schottky diode of the present disclosure may further include:
operation S11: preparing a Pt metal thin film layer on the surface of the epitaxial layer;
according to the embodiment of the present disclosure, after operation S1, an extremely thin layer of Pt metal (for example, 2nm thick) may be grown on the surface of the GaN epitaxial layer, and then the above operations S2-S5 are performed to complete the growth of PtO and the low work function metal, so that the double barrier schottky diode can be obtained, and the same good technical effect is achieved: when the double barrier Schottky diode is forward biased, the low barrier Ni Schottky is turned on at a lower voltage, so the turn-on voltage of the structure will be substantially the same as that of the Ni-GaN Schottky diode. When PtO is reachedxThe double schottky is turned on at the same time when the voltage is turned on, so that the on-resistance is not reduced obviously. PtO due to high barrier when a double barrier Schottky diode is reverse biasedxThe reverse leakage of the low barrier Ni is pinched off. Therefore the reverse leakage of the double barrier schottky diode will sum up to PtOxAn order of magnitude GaN schottky diode. At the same time, due to PtOxThe GaN Schottky diode has very good high-temperature working characteristics, and the double-barrier Schottky diode also has good application prospect at high temperature.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should clearly recognize the method for manufacturing the double barrier schottky diode according to the present disclosure.
In summary, the present disclosure provides a method for manufacturing a double-barrier schottky diode, which can solve the problem of energy loss caused by high turn-on voltage and high leakage current of a GaN schottky diode, and combines the advantages of high and low barriers to realize the advantage of maintaining a smaller reverse leakage current while having a lower turn-on voltage by a simple method of forming a high and low double-barrier GaN SBD. Has good application prospect in high power density and high temperature environment.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A preparation method of a double-barrier Schottky diode comprises the following steps:
preparing an epitaxial layer on a substrate;
growing a metal oxide film on the epitaxial layer to serve as a high-barrier Schottky;
forming a metal oxide nanoparticle layer on the metal oxide film by using rapid thermal annealing;
preparing a metal layer to cover the metal oxide nano particle layer to obtain a low-barrier Schottky; and
and preparing ohmic contact on the back surface of the substrate to finish the preparation of the double-barrier Schottky diode.
2. The method of claim 1 wherein said metal oxide is selected from the group consisting of oxides of Ni, Au, Pt, Cu, Mo, Ag, and W.
3. The method of claim 1 wherein said metal oxide is PtOx。
4. The method of claim 1, wherein said metal layer is made of a material selected from the group consisting of Ni, Au, Pt, Cu, Mo, Ag, and W.
5. The method of claim 1 wherein the ohmic contact is made by growing Ti/Al/Ni/Au on the back side of the substrate.
6. The method of making a double barrier schottky diode of claim 1 further comprising:
growing a metal film on the epitaxial layer to serve as a low-barrier Schottky;
forming a metal nanoparticle layer on the metal film by using rapid thermal annealing; and
and preparing a metal oxide layer to cover the metal nano particle layer to obtain the high-barrier Schottky.
7. The method of making a double barrier schottky diode of claim 1 further comprising:
and preparing a Pt metal film layer on the surface of the epitaxial layer.
8. The method of claim 1 wherein said substrate is a gallium nitride substrate.
9. The method of claim 1 wherein said epitaxial layer is a gallium nitride epitaxial layer.
10. The method of claim 7 wherein said Pt metal thin film layer is 2nm thick.
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| CN113436970B (en) | 2024-03-29 |
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