CN113436970B - Preparation method of double-barrier Schottky diode - Google Patents
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- CN113436970B CN113436970B CN202110707635.5A CN202110707635A CN113436970B CN 113436970 B CN113436970 B CN 113436970B CN 202110707635 A CN202110707635 A CN 202110707635A CN 113436970 B CN113436970 B CN 113436970B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 63
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 35
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000002105 nanoparticle Substances 0.000 claims abstract description 15
- 238000004151 rapid thermal annealing Methods 0.000 claims abstract description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 16
- 239000002082 metal nanoparticle Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 5
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 230000009977 dual effect Effects 0.000 description 16
- 230000006870 function Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present disclosure provides a method for manufacturing a double-barrier schottky diode, comprising: preparing an epitaxial layer on a substrate; growing a metal oxide film on the epitaxial layer to serve as a high barrier Schottky; forming a metal oxide nanoparticle layer from the metal oxide film using rapid thermal annealing; preparing a metal layer to cover the metal oxide nano particle layer to obtain a low barrier Schottky; and preparing ohmic contact on the back surface of the substrate to complete the preparation of the double-barrier Schottky diode. The double-barrier Schottky diode prepared by the method can effectively solve the technical problems that in the prior art, the starting voltage of the Schottky diode is difficult to be reduced simultaneously, the reverse leakage current is reduced and the like.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, and in particular relates to a preparation method of a double-barrier Schottky diode.
Background
The power loss of a power diode device is an important parameter in practical application, and in order to achieve the minimized power loss, three aspects of on-resistance, turn-on voltage and reverse leakage current of the device should be reduced. SBDs (Schottky Barrier Diode, schottky barrier diodes) are widely used in circuits as a rectifying device fabricated using the metal-semiconductor junction principle formed by metal-semiconductor contacts. An idealized SBD should have zero on-voltage drop and zero reverse leakage current. However, in practical applications, the on-voltage drop and the reverse leakage current of the SBD often have a direct relationship with the SBH (Schottky barrier height, schottky barrier height, i.e., the barrier height of the metal-semiconductor contact interface). Selecting a higher SBH can effectively reduce the reverse leakage current of the schottky diode, but can result in a higher forward turn-on voltage; while a lower SBH is selected to achieve a lower turn-on voltage, but results in a higher reverse leakage current. Higher turn-on voltage and reverse leakage current mean more energy is lost.
Therefore, it is an urgent technical problem to be solved how to achieve a balance between reducing the turn-on voltage and reducing the reverse leakage current.
Disclosure of Invention
First, the technical problem to be solved
Based on the above problems, the present disclosure provides a preparation method of a double-barrier schottky diode, so as to alleviate the technical problems in the prior art that the schottky diode is difficult to simultaneously reduce the turn-on voltage and reduce the reverse leakage current.
(II) technical scheme
The present disclosure provides a method for manufacturing a double-barrier schottky diode, comprising: preparing an epitaxial layer on a substrate; growing a metal oxide film on the epitaxial layer to serve as a high barrier Schottky; forming a metal oxide nanoparticle layer from the metal oxide film using rapid thermal annealing; preparing a metal layer to cover the metal oxide nano particle layer to obtain a low barrier Schottky; and preparing ohmic contact on the back surface of the substrate to complete the preparation of the double-barrier Schottky diode.
According to an embodiment of the present disclosure, the metal oxide is selected from the group consisting of oxides of Ni, au, pt, cu, mo, ag, or W.
According to an embodiment of the disclosure, the metal oxide is PtO x 。
According to an embodiment of the present disclosure, the metal layer is made of a material selected from Ni, au, pt, cu, mo, ag or W.
According to the embodiment of the disclosure, ti/Al/Ni/Au is grown on the back surface of the substrate to prepare ohmic contact.
According to the embodiment of the disclosure, the preparation method of the double-barrier schottky diode further comprises the following steps:
growing a metal film on the epitaxial layer to serve as a low barrier Schottky; forming a metal nanoparticle layer on the metal film by rapid thermal annealing; and preparing a metal oxide layer to cover the metal nanoparticle layer to obtain the high barrier Schottky.
According to the embodiment of the disclosure, the preparation method of the double-barrier schottky diode further comprises the following steps: and preparing a Pt metal film layer on the surface of the epitaxial layer.
According to an embodiment of the disclosure, the substrate is a gallium nitride substrate.
According to an embodiment of the disclosure, the epitaxial layer is a gallium nitride epitaxial layer.
According to the embodiment of the disclosure, the thickness of the Pt metal film layer is 2nm.
(III) beneficial effects
As can be seen from the above technical solutions, the preparation method of the dual barrier schottky diode of the present disclosure has at least one or a part of the following advantages:
(1) The Ni schottky of the low barrier turns on at a lower voltage when forward biased, so the turn-on voltage of the structure will remain substantially the same as the Ni-GaN schottky diode. When PtO is reached x When the voltage is started, the double Schottky is conducted simultaneously, so that the on-state resistance does not drop obviously;
(2) Due to high barrier PtO when reverse biased x So that reverse leakage of low barrier Ni is pinched off. Thus the reverse leakage of the double barrier Schottky diode will be equal to PtO x -GaN schottky diode of one order of magnitude;
(3) Due to PtO x The GaN Schottky diode has very good high-temperature working characteristics, and the double-barrier Schottky diode has good application prospect at high temperature.
Drawings
Fig. 1 is a schematic view of a device after an epitaxial layer is formed on a substrate in a method for forming a dual barrier schottky diode according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram of a device after a metal oxide film is grown on the epitaxial layer in the method for manufacturing a dual barrier schottky diode according to an embodiment of the present disclosure.
Fig. 3 is a schematic view of a device after forming a metal oxide nanoparticle layer from the metal oxide thin film by rapid thermal annealing in the method for manufacturing a dual barrier schottky diode according to an embodiment of the present disclosure.
Fig. 4 is a schematic diagram of a device after a Ni/Au layer is coated on the metal oxide nanoparticle layer to obtain a low barrier schottky in the method for manufacturing a dual barrier schottky diode according to an embodiment of the present disclosure.
Fig. 5 is a schematic diagram of an overall device after Ti/Al/Ni/Au is grown as ohmic contact on the back surface of the substrate in the method for manufacturing a double barrier schottky diode according to an embodiment of the present disclosure.
Fig. 6 is a schematic diagram of an overall device after a Pt metal thin film layer is first prepared on the surface of an epitaxial layer and then a subsequent operation is completed in the preparation method of the dual barrier schottky diode according to the embodiment of the present disclosure.
Fig. 7 is a flow chart illustrating a method for fabricating a dual barrier schottky diode according to an embodiment of the present disclosure.
Fig. 8 is a flow chart illustrating a method for fabricating a dual barrier schottky diode according to another embodiment of the present disclosure.
Fig. 9 is a flow chart illustrating a method for fabricating a dual barrier schottky diode according to another embodiment of the present disclosure.
Detailed Description
The preparation method of the double-barrier Schottky diode combines the advantages of high potential barrier and low potential barrier, and prepares the wide-bandgap semiconductor double-barrier Schottky diode by a simple method for forming high-low double-barrier GaN SBD, so that the advantages of low starting voltage and low reverse leakage current can be maintained. The method fully utilizes the temperature characteristic of high barrier noble metal oxide PtO, ptO forms nano particles on the surface of GaN through annealing, and then a layer of low barrier metal Ni is evaporated on the GaN, so that PtO-GaN and Ni-GaN high-low double barriers are formed on the surface of GaN.
The inventors have discovered that in implementing the present disclosure, the forward and reverse characteristics are tradeoffs in a single schottky barrier device that cannot be minimized at the same time. For example, for a high barrier Schottky contact, the reverse leakage of the device will decrease, but the forward turn-on voltage will alsoWill increase accordingly; for schottky contacts with low potential barrier, the device has the defects of large reverse leakage current and lower breakdown voltage. Therefore, the Schottky Barrier Height (SBH) plays a decisive role for the operating characteristics of the schottky diode (SBD). Gallium nitride (GaN) has been widely studied as a third generation semiconductor material, and a high power schottky diode based thereon. The schottky barrier height of the gan diode plays a decisive role in the rectifying performance of the diode. The schottky barrier height is affected by metal work function and interface defects, etc. The Schottky metals currently under investigation are generally selected from Ni, au, pt, cu, mo, ag, W and oxides of the foregoing metals, etc., and the SBH formed by contact of the metals with GaN is generally relatively low, whereas oxidized metals such as PtO x The work function of the metal is high and relatively high SBH can be formed between the metal and GaN. The prior art reduces the edge leakage of the diode, but the device in actual use is generally larger in device area, and the edge leakage ratio in the total leakage is small, so that the effect of reducing the leakage current is relatively limited. The bulk leakage of the Schottky diode can be effectively reduced by a large number of nanoscale double-barrier diodes in the Schottky contact, so that the reduction effect on the overall leakage is remarkable, and the method has practical significance.
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
In an embodiment of the present disclosure, a method for manufacturing a dual barrier schottky diode is provided, and in combination with fig. 1 to 7, the method includes:
operation S1: preparing an epitaxial layer on a substrate;
in the embodiment of the present disclosure, as shown in fig. 1, a gallium nitride substrate and a gallium nitride epitaxial layer are illustrated as examples.
Operation S2: growing a metal oxide film on the epitaxial layer to serve as a high barrier Schottky;
in an embodiment of the present disclosure, as shown in FIG. 2, to grow PtO using magnetron sputtering x The high barrier schottky will be described as an example.
Operation S3: forming a metal oxide nanoparticle layer from the metal oxide film using rapid thermal annealing;
in the embodiment of the disclosure, as shown in fig. 3, annealing is performed on the metal oxide to form a uniformly distributed metal oxide nanoparticle layer, so that leakage current can be effectively reduced in a device with a limited area, and the device can normally work at a high temperature.
Operation S4: and preparing a metal layer to cover the metal oxide nanoparticle layer to obtain the low barrier Schottky.
In the embodiment of the present disclosure, as shown in fig. 4, a Ni/Au layer is grown using an electron beam evaporation method, and a low barrier schottky is formed on the metal oxide nanoparticle layer and between the metal oxide nanoparticles. The low work function metal can improve the forward characteristic of the device and reduce the starting voltage and the on-resistance.
Operation S5: ohmic contacts are made to the back side of the substrate.
In the embodiment of the present disclosure, as shown in fig. 5, a Ti/Al/Ni/Au layer is grown on the back surface of a gallium nitride substrate as an ohmic contact, to complete the fabrication of a double barrier schottky diode.
According to the embodiments of the present disclosure, the present disclosure is directed to a schottky diode formed of a wide bandgap semiconductor and a high work function noble metal oxide, but has the same effect for other wide bandgap semiconductor devices having schottky contacts.
According to the embodiment of the disclosure, the thickness, annealing temperature, annealing time and the like of the noble metal oxide film with high work function can be adjusted according to the actual application requirements, and are not particularly limited herein.
The order of deposition of the high and low barrier schottky metals or metal oxides may also be adjusted according to process requirements in accordance with embodiments of the present disclosure.
According to embodiments of the present disclosure, as shown in fig. 8, annealing a low work function metal to form nanoparticles, and then regrowing a high work function noble metal oxide may also form a nano double barrier schottky diode. For example, the method for manufacturing the dual barrier schottky diode according to the embodiment of the disclosure may further include:
operation S2': growing a metal film on the epitaxial layer to serve as a low barrier Schottky;
operation S3': forming a metal nanoparticle layer on the metal film by rapid thermal annealing;
operation S4': and preparing a metal oxide layer to cover the metal nano particle layer to obtain the high barrier Schottky.
According to an embodiment of the present disclosure, as shown in fig. 6 and 9, the method for manufacturing a dual barrier schottky diode of the present disclosure may further include:
operation S11: preparing a Pt metal film layer on the surface of the epitaxial layer;
according to the embodiment of the disclosure, after operation S1, a layer of extremely thin Pt metal (e.g., 2nm thick) may be grown on the GaN epitaxial layer first, and then the above operation S2-operation S5 is performed to complete growth of PtO and low work function metal, so that a dual barrier schottky diode can be obtained, and the same good technical effects are achieved: when the dual barrier schottky diode is forward biased, the Ni schottky of the low barrier turns on at a lower voltage, so the turn-on voltage of the structure will remain substantially the same as the Ni-GaN schottky diode. When PtO is reached x The dual schottky is turned on at the same time, so the on-resistance does not drop significantly. When the double barrier schottky diode is reverse biased, ptO is due to the high barrier x So that reverse leakage of low barrier Ni is pinched off. Thus the reverse leakage of the double barrier Schottky diode will be equal to PtO x GaN schottky diode by one order of magnitude. At the same time due to PtO x The GaN Schottky diode has very good high-temperature working characteristics, and the double-barrier Schottky diode has good application prospect at high temperature.
Thus, embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It should be noted that, in the drawings or the text of the specification, implementations not shown or described are all forms known to those of ordinary skill in the art, and not described in detail. Furthermore, the above definitions of the elements and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and may be simply modified or replaced by those of ordinary skill in the art.
From the foregoing description, one skilled in the art should clearly recognize the method of fabricating the dual barrier schottky diode of the present disclosure.
In summary, the present disclosure provides a method for manufacturing a dual-barrier schottky diode, which can solve the energy loss problem caused by the high turn-on voltage and the high leakage current of the GaN schottky diode, and combine the advantages of the high barrier and the low barrier, and by using a simple method for forming the high-low dual-barrier GaN SBD, the advantage of maintaining the small reverse leakage current while having the low turn-on voltage is achieved. Has good application prospect in high power density and high temperature environment.
It should be further noted that, the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the drawings, and are not intended to limit the scope of the present disclosure. Like elements are denoted by like or similar reference numerals throughout the drawings. Conventional structures or constructions will be omitted when they may cause confusion in understanding the present disclosure.
And the shapes and dimensions of the various elements in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. In addition, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the description and the claims to modify a corresponding element does not by itself connote any ordinal number of elements or the order of manufacturing or use of the ordinal numbers in a particular claim, merely for enabling an element having a particular name to be clearly distinguished from another element having the same name.
Furthermore, unless specifically described or steps must occur in sequence, the order of the above steps is not limited to the list above and may be changed or rearranged according to the desired design. In addition, the above embodiments may be mixed with each other or other embodiments based on design and reliability, i.e. the technical features of the different embodiments may be freely combined to form more embodiments.
Those skilled in the art will appreciate that the modules in the apparatus of the embodiments may be adaptively changed and disposed in one or more apparatuses different from the embodiments. The modules or units or components of the embodiments may be combined into one module or unit or component and, furthermore, they may be divided into a plurality of sub-modules or sub-units or sub-components. Any combination of all features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or units of any method or apparatus so disclosed, may be used in combination, except insofar as at least some of such features and/or processes or units are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also, in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.
While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be understood that the foregoing embodiments are merely illustrative of the invention and are not intended to limit the invention, and that any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.
Claims (4)
1. A preparation method of a double-barrier Schottky diode comprises the following steps:
preparing an epitaxial layer on a substrate, wherein the substrate is a gallium nitride substrate;
preparing a platinum thin film layer on the surface of the epitaxial layer, and growing a metal oxide thin film on the platinum thin film layer to serve as a high barrier Schottky, wherein the epitaxial layer is a gallium nitride epitaxial layer, and the metal oxide is PtO x ；
Forming a metal oxide nanoparticle layer on the metal oxide film by rapid thermal annealing to reduce leakage;
preparing a metal layer to cover the metal oxide nano particle layer to obtain a low barrier Schottky; and
ohmic contact is prepared on the back surface of the substrate, and the preparation of the double-barrier Schottky diode is completed;
the preparation method of the double-barrier Schottky diode further comprises the following steps:
growing a metal film on the epitaxial layer to serve as a low barrier Schottky;
forming a metal nanoparticle layer on the metal film by rapid thermal annealing; and
and preparing a metal oxide layer to cover the metal nano particle layer to obtain the high barrier Schottky.
2. The method for manufacturing a double barrier schottky diode according to claim 1, wherein the metal layer is made of a material selected from Ni, au, pt, cu, mo, ag or W.
3. The method of fabricating a double barrier schottky diode according to claim 1, growing Ti/Al/Ni/Au on the back side of the substrate to make an ohmic contact.
4. The method for manufacturing a double barrier schottky diode according to claim 1, wherein the thickness of the Pt metal thin film layer is 2nm.
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