CN112786708B - Ultra-low VF soft fast recovery diode - Google Patents
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- 238000011084 recovery Methods 0.000 title claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 92
- 239000002184 metal Substances 0.000 claims abstract description 92
- 230000004888 barrier function Effects 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000007704 transition Effects 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001883 metal evaporation Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Abstract
The invention discloses an ultra-low VF soft fast recovery diode and a manufacturing method thereof, wherein the ultra-low VF soft fast recovery diode comprises the following components in sequence from top to bottom: the Schottky barrier comprises a first metal electrode, an oxide layer, a Schottky barrier, a P + ring, a P-well, an N-high resistance layer, an N + substrate layer and a second metal electrode, wherein the Schottky barrier covers a non-P-well region of an active region, the Schottky barrier occupies 4/6-5/6 of the area of the active region, and the P-well occupies 1/6-2/6 of the area of the active region. The SBD diode and the PIN diode are combined to form a novel diode, on the basis of the PIN diode, a small island of a Schottky barrier is additionally arranged in an active area, a parallel structure in which a P-well region and the Schottky barrier alternately exist is formed in the active area, the advantages of the SBD diode and the FRD (fast Recovery diode) diode are combined, forward voltage is reduced, and soft fast Recovery parameters are excellent.
Description
Technical Field
The invention relates to the technical field of soft fast recovery diodes, in particular to an ultra-low VF soft fast recovery diode and a manufacturing method thereof.
Background
The existing fast recovery diode is mainly a PIN structure diode, and the reverse recovery time is adjusted by doping heavy metal impurities such as Pt, Au and the like or by electron irradiation, so that the purpose of fast recovery is achieved. By voltage classification, the current mainstream design and process platforms include more than ten voltage platforms, such as 100V, 200V, 300V, 400V, 600V, 800V, 1200V, 1700V, 3300V, 4500V, etc. According to the customer requirements, the method can be generally divided into three types of conventional fast recovery, ultra-fast recovery and extremely-fast recovery according to the recovery speed. The existing fast recovery diode design and process platform are difficult to realize soft fast recovery and low forward voltage drop, generally need to select between two kinds of parameters, and particularly for high-voltage fast recovery diode products, the fast recovery diode often accompanies ultrahigh forward voltage drop while realizing soft fast recovery, or the fast recovery diode often accompanies extremely large reverse recovery time while realizing low forward voltage drop (VF).
A Schottky Barrier Diode (abbreviated as an SBD) is a Diode that is formed by contacting a metal and a semiconductor to form a Schottky Barrier and realize a unidirectional conductive function. The voltage classification generally comprises six voltage platforms of 30V, 45V, 60V, 100V, 150V, 200V and the like. Because the schottky barrier diode is a multi-quantum device and has no storage and recombination effects of minority carriers, the reverse recovery time of the schottky barrier junction is generally negligible. Different barrier metals can be selected according to different parameter characteristic requirements of different customers. The common Schottky barrier metals at present include Ti, Ni, Cr, NiPt alloy and the like. Schottky barrier diodes have the advantages of reduced forward voltage and extremely short recovery time, but generally, silicon-based SBD barriers are limited to low-voltage products of 200V or less, are difficult to realize extremely high reverse voltage, and are widely used only in low-voltage circuits. And because of schottky barrier, reverse leakage current is often very big, and especially low-barrier products are still extremely sensitive to temperature, and high temperature leakage current often reaches mA level, and this has just restricted SBD diode's use in the circuit.
Therefore, it is an urgent technical problem to be solved by those skilled in the art to develop an ultra-low VF soft fast recovery diode that combines the soft fast recovery parameter and the ultra-low forward voltage drop parameter.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides an ultra-low VF soft fast recovery diode and a method for manufacturing the same. The SBD diode and the PIN diode are combined to form a novel diode, on the basis of the PIN diode, a small island of a Schottky barrier is additionally arranged in an active area, a parallel structure in which a P-well region and the Schottky barrier alternately exist is formed in the active area, the advantages of the SBD diode and the FRD (fast Recovery diode) diode are combined, forward voltage is reduced, and soft fast Recovery parameters are excellent.
The technical scheme of the invention is as follows: the invention provides an ultra-low VF soft fast recovery diode, which comprises the following components in sequence from top to bottom: the Schottky barrier comprises a first metal electrode, an oxide layer, a Schottky barrier, a P + ring, a P-well, an N-high resistance layer, an N + substrate layer and a second metal electrode, wherein the Schottky barrier covers a non-P-well region of an active region, the Schottky barrier occupies 4/6-5/6 of the area of the active region, and the P-well occupies 1/6-2/6 of the area of the active region.
Furthermore, the doped impurities in the P + ring and the P-well are boron.
Further, the barrier metal in the Schottky barrier is NiPt alloy, and the content of Pt in the NiPt alloy is 5% -95%.
Further, the first metal electrode is a front metal electrode, the second metal electrode is a back metal electrode, both the first metal electrode and the second metal electrode are of a multilayer metal structure, and the multilayer metal structure at least comprises one part: contact layer, transition layer and electrode metal layer.
Furthermore, in the multilayer metal structure of the first metal electrode, the contact layer is Ti or V, the transition layer is Ni, and the electrode metal layer is Al or Ag.
Furthermore, in the multilayer metal structure of the second metal electrode, the contact layer is Ti or V, the transition layer is Ni, and the electrode metal layer is Ag.
Further, the P-well is hexagonal or bar-shaped.
The invention also provides a manufacturing method of the ultra-low VF soft fast recovery diode, which comprises the following steps:
s10, providing a wafer, generating a high-resistance layer on the substrate layer, and forming an oxide layer on the high-resistance layer through high-temperature thermal oxidation;
s20, carrying out photoetching, etching, injecting, knot pushing or annealing on the oxide layer and the high-resistance layer to form a P + ring;
s30, carrying out photoetching, etching, injecting, junction pushing or annealing on the oxide layer and the high-resistance layer to form an active region P-well;
s40, performing lead hole photoetching, etching, heavy metal sputtering, annealing, barrier metal deposition and alloying on the non-P-well region of the active region to form a Schottky barrier;
s50, performing front metal deposition, photoetching and etching to form a first metal electrode;
and S60, carrying out back thinning, back processing and back metal deposition to form a second metal electrode.
Further, in step S50, the first metal electrode is formed by metal evaporation or sputtering, and the multilayer metal structure of the first metal electrode includes at least one of: the contact layer, the Ni transition layer and the electrode metal layer; in step S60, the second metal electrode forms a multi-layer metal structure of the second metal electrode by metal evaporation, where the multi-layer metal structure of the second metal electrode includes at least one metal: contact layer, transition layer and electrode metal layer.
Further, in step S40, the heavy metal is a pure Pt target, the barrier metal is a NiPt alloy, and the annealing temperature is 800 to 950 ℃.
By adopting the scheme, the invention provides an ultra-low VF soft fast recovery diode and a manufacturing method thereof, and the ultra-low VF soft fast recovery diode has the following beneficial effects:
(1) on the basis of the PIN diode, a small island of a Schottky barrier is additionally arranged in an active region, a parallel structure in which a P-well region and the Schottky barrier alternately exist is formed in the active region, the advantages of the SBD diode and the FRD diode are combined, forward conduction voltage drop is greatly reduced on the basis of low electric leakage of a traditional MPS structure, and the ultra-low VF soft fast recovery diode is realized.
(2) The diode is not limited to the selection of the reverse recovery characteristic and the forward voltage drop in the use process, and the defect that the forward voltage drop of the high-voltage fast recovery diode is high in use is overcome.
(3) The chip has excellent reverse recovery characteristics, small reverse recovery time and soft reverse recovery characteristics.
(4) The manufacturing method of the ultra-low VF soft fast recovery diode is simple and easy to realize, the size and the spacing of a source region P-well region, barrier metal, annealing temperature and the like can be set according to requirements so as to adjust the reverse recovery characteristic and the forward voltage drop of a chip, and the applicability is strong.
Drawings
FIG. 1 is a schematic illustration of the formation of a high resistance layer on a substrate layer in accordance with the present invention.
FIG. 2 is a schematic diagram of the formation of an oxide layer and a P + ring in the present invention.
Fig. 3 is a schematic diagram of forming an active region P-well in the present invention.
FIG. 4 is a schematic diagram of Schottky barrier formation in the non-P-well region of the active region according to the present invention.
Fig. 5 is a schematic diagram of forming a first metal electrode according to the present invention.
Fig. 6 is a schematic diagram of forming a second metal electrode according to the present invention.
FIG. 7 is a schematic plane layout of the P-well in the active region according to the present invention.
Detailed Description
The invention is described in detail below with reference to the figures and the specific embodiments.
As shown in fig. 1-6, which are schematic diagrams illustrating the formation of an ultra-low VF soft fast recovery diode according to the present invention, it can be seen that the order from top to bottom is: the Schottky barrier diode comprises a first metal electrode 10, an oxidation layer 20, a Schottky barrier 30, a P + ring 40, a P-well 50, an N-high resistance layer 60, an N + substrate layer 70 and a second metal electrode 80, wherein the Schottky barrier 30 covers a non-P-well region of an active region, the Schottky barrier 30 occupies 4/6-5/6 of the area of the active region, and the P-well 50 occupies 1/6-2/6 of the area of the active region. According to the arrangement and the area proportion, besides the P-well 50, a small island formed by the Schottky barrier 30 is additionally arranged in the active region, and a parallel structure formed by the P-well 50 and the Schottky barrier 30 alternately exists in the active region, so that the advantages of the SBD diode and the FRD diode are combined. When the chip bears reverse voltage, the space charge regions of the individual PN junctions are expanded and finally connected, so that the Schottky region is shielded and is not subjected to the reverse voltage, the voltage withstanding problem of the Schottky barrier is solved, and the reverse voltage withstanding of the chip is increased. When a forward voltage is applied, the Schottky barrier is firstly conducted, so that the chip has small forward voltage drop. Due to the existence of the Schottky barrier 30, the extraction speed of the current carrier is accelerated in the reverse recovery process of the chip, so that the chip has excellent reverse recovery characteristics, the reverse recovery time is short, and the reverse recovery characteristics are soft. Preferably, in this embodiment, the impurity doped in the P + ring 40 and the P-well 50 is boron, and the impurity source may be boron-based ion implantation special gas, or may be a boron-based liquid source or a boron-based solid source. The barrier metal in the schottky barrier 30 is NiPt alloy, the content of Pt in the NiPt alloy is 5% -95%, the proportion has an adjusting relation with forward voltage drop and reverse recovery characteristics, the proportion can be properly adjusted according to the forward voltage drop target requirement of a device, and through multiple experiments of an inventor, the proportion range is matched with Pt annealing temperature, so that the forward voltage drop of the final diode is smaller, and the reverse recovery characteristics are softer.
In addition, it is worth mentioning that the first metal electrode 10 is a front metal electrode, the second metal electrode 80 is a back metal electrode, and both the first metal electrode 10 and the second metal electrode 80 are of a multilayer metal structure, which includes at least one layer: contact layer, transition layer and electrode metal layer. In the multilayer metal structure of the first metal electrode 10, the contact layer is Ti or V, the transition layer is Ni, and the electrode metal layer is Al or Ag. In the multilayer metal structure of the second metal electrode 80, the contact layer is Ti or V, which is used to ensure ohmic contact. The transition layer is Ni, the electrode metal layer is Ag, and the transition layer is used for protecting the metal of the contact layer and the transition layer and ensuring the reliability of packaging and welding.
As shown in fig. 7, in the present embodiment, the P-well has a hexagonal structure, but it is also contemplated that other shapes, such as a bar shape, may be conveniently implemented.
The invention also provides a manufacturing method of the ultra-low VF soft fast recovery diode, which comprises the following steps:
s10, providing a wafer, forming a high resistance layer 60 on the substrate layer 70, and forming an oxide layer 20 on the high resistance layer 60 by high temperature thermal oxidation;
s20, performing photoetching, etching, injecting, knot pushing or annealing on the oxide layer 20 and the high-resistance layer 60 to form a P + ring 40; the structure and process of the P + ring 40 that can be realized by the prior art can be adopted as required.
S30, performing photoetching, etching, injecting, junction pushing or annealing on the oxide layer and the high-resistance layer to form an active region P-well 50; the planar arrangement of the P-well 50 in the active region is schematically shown in fig. 7, and the P-well 50 has a hexagonal structure. It is anticipated that the size, spacing, and junction depth of the P-wells 50 may vary from voltage platform to voltage platform and are within the scope of the present invention.
S40, performing lead hole photoetching, etching, heavy metal sputtering, annealing, barrier metal deposition and alloying on the non-P-well region of the active region to form a Schottky barrier 30; the heavy metal in the step adopts a pure Pt target material, the barrier metal adopts a NiPt alloy barrier, a Schottky barrier layer is formed by sputtering a NiPt alloy and a barrier alloy process, the relation between the forward voltage drop and the reverse recovery characteristic is adjusted by the NiPt alloy proportion and the Pt annealing temperature of a barrier region, the content of Pt in NiPt is 5-95% in the embodiment, and the Pt annealing temperature is 800-950 ℃. The excellent effects of smaller forward pressure drop and softer reverse recovery characteristics are achieved. It is also envisioned that the NiPt ratio may be adjusted based on the device VF target.
S50, performing front metal deposition, photoetching and etching to form a first metal electrode 10; in this step, the first metal electrode 10 forms a multi-layer metal structure of the first metal electrode 10 by means of metal evaporation, which includes at least one part: contact layer, transition layer and electrode metal layer. The contact layer is a Ti or V contact layer, the transition layer is a Ni transition layer, and the electrode metal layer is an Al or Ag electrode metal layer.
S60, performing back thinning, back processing, and back metal deposition to form a second metal electrode 80, wherein the second metal electrode 80 forms a multi-layer metal structure of the second metal electrode 80 by metal evaporation, and the multi-layer metal structure includes at least one metal: contact layer, transition layer and electrode metal layer. Wherein the contact layer is a Ti or V contact layer, the transition layer is a Ni transition layer, and the electrode metal layer is an Ag electrode metal layer.
Compared with the conventional soft fast recovery diode and the conventional MPS structure fast recovery diode, the conventional parameters of the 15A/1200V ultra-low VF soft fast recovery diode developed by the manufacturing method of the ultra-low VF soft fast recovery diode have obvious comprehensive parameter performance advantages, and the comparison is shown in the following table.
The ultra-low VF soft fast recovery diode combines the advantages of a Schottky Barrier Diode (SBD) and a Fast Recovery Diode (FRD), on the basis of the traditional MPS structure, a Schottky barrier is formed in a non-P-well region of an active region, on the basis of the low electric leakage of the traditional MPS structure, the forward conduction voltage drop is greatly reduced, and the ultra-low VF soft fast recovery diode is realized, so that the diode is not limited to the selection of the reverse recovery characteristic and the forward voltage drop in the use process, the defect that the forward voltage drop of the high-voltage fast recovery diode is high in use is overcome, and the ultra-low VF soft fast recovery diode is difficult to realize in the traditional fast recovery diode. The manufacturing method of the ultra-low VF soft fast recovery diode and the ultra-low VF soft fast recovery diode are worthy of wide popularization and application.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. The utility model provides an ultra-low VF soft fast recovery diode which characterized in that from last to down does in proper order: the Schottky barrier comprises a first metal electrode, an oxide layer, a Schottky barrier, a P + ring, a P-well, an N-high resistance layer, an N + substrate layer and a second metal electrode, wherein the Schottky barrier covers a non-P-well region of an active region, the Schottky barrier occupies 4/6-5/6 of the area of the active region, and the P-well occupies 1/6-2/6 of the area of the active region; the barrier metal in the Schottky barrier is NiPt alloy, and the content of Pt in the NiPt alloy is as follows: 5-95%, and the Pt annealing temperature is 800-950 ℃.
2. The ultra-low VF soft fast recovery diode of claim 1 wherein the dopant impurity in the P + ring and P-well is boron.
3. The ultra-low VF soft fast recovery diode of claim 1, wherein the first metal electrode is a front metal electrode, the second metal electrode is a back metal electrode, and the first metal electrode and the second metal electrode are both multilayer metal structures comprising at least one part: contact layer, transition layer and electrode metal layer.
4. The diode of claim 3, wherein the first metal electrode has a multi-layer metal structure with a contact layer of Ti or V, a transition layer of Ni, and an electrode metal layer of Al or Ag.
5. The diode of claim 3, wherein the second metal electrode has a multilayer metal structure with a contact layer of Ti or V, a transition layer of Ni, and an electrode metal layer of Ag.
6. The ultra-low VF soft fast recovery diode of claim 1 wherein the P-well is hexagonal or bar shaped.
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| CN102354704A (en) * | 2011-11-04 | 2012-02-15 | 丹东安顺微电子有限公司 | Schottky diode with high reverse-blocking performance and manufacturing method thereof |
| CN104716038A (en) * | 2013-12-12 | 2015-06-17 | 江苏宏微科技股份有限公司 | Composite fast recovery diode and preparation method thereof |
| CN105826399A (en) * | 2016-05-25 | 2016-08-03 | 上海安微电子有限公司 | Soft fast recovery diode of multi-mixture structure and preparation method thereof |
| CN109103094A (en) * | 2018-07-13 | 2018-12-28 | 张家港意发功率半导体有限公司 | A kind of preparation method mixing PIN/ Schottky fast recovery diode |
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| US20210036167A1 (en) * | 2019-08-01 | 2021-02-04 | AZ Power, Inc | MERGED PiN SCHOTTKY (MPS) DIODE WITH PLASMA SPREADING LAYER AND MANUFACTURING METHOD THEREOF |
| US20210036166A1 (en) * | 2019-08-01 | 2021-02-04 | AZ Power, Inc | MERGED PiN SCHOTTKY (MPS) DIODE WITH MULTIPLE CELL DESIGN AND MANUFACTURING METHOD THEREOF |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102354704A (en) * | 2011-11-04 | 2012-02-15 | 丹东安顺微电子有限公司 | Schottky diode with high reverse-blocking performance and manufacturing method thereof |
| CN104716038A (en) * | 2013-12-12 | 2015-06-17 | 江苏宏微科技股份有限公司 | Composite fast recovery diode and preparation method thereof |
| CN105826399A (en) * | 2016-05-25 | 2016-08-03 | 上海安微电子有限公司 | Soft fast recovery diode of multi-mixture structure and preparation method thereof |
| CN109103094A (en) * | 2018-07-13 | 2018-12-28 | 张家港意发功率半导体有限公司 | A kind of preparation method mixing PIN/ Schottky fast recovery diode |
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