CN105826399A - Soft fast recovery diode of multi-mixture structure and preparation method thereof - Google Patents
Soft fast recovery diode of multi-mixture structure and preparation method thereof Download PDFInfo
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- CN105826399A CN105826399A CN201610353299.8A CN201610353299A CN105826399A CN 105826399 A CN105826399 A CN 105826399A CN 201610353299 A CN201610353299 A CN 201610353299A CN 105826399 A CN105826399 A CN 105826399A
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- 238000011084 recovery Methods 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000203 mixture Substances 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The main purpose of the invention is to provide a high-voltage soft fast recovery diode and a preparation method thereof. According to the invention, a structure in which Schottky is mixed with high-concentration and low-concentration PN junctions is adopted, and varied lateral doping (VLD) plane terminal protection is made synchronously. Thus, the breakdown voltage and anti-surge capability are improved, the recovery time is reduced, the soft recovery characteristic is formed, and a good low-leakage effect is achieved. High-concentration P+/N- junction, Schottky junction, low-concentration P-/N- junction and Schottky junction structures are made and arranged at intervals on N-/N/N+ silicon wafers. By adding the P-/N- structure, the efficiency of hole injection is reduced, the time for reverse recovery is reduced, reduction in barrier height of a Schottky junction is avoided, and soft fast recovery and low leakage are both achieved. The original structure and the added P-/N- structure form a VLD terminal structure, which ensures high voltage and high anti-surge capability, simplifies the manufacturing process, and reduces the cost. Compared with the tradition fast recovery diode of a PIN and MPS structure, the diode of a multi-mixture structure recovers faster, and has a wider application range.
Description
Technical field
The invention belongs to the technical field of diode and preparation thereof, particularly relate to a kind of high pressure, soft, fast recovery diode
And preparation method thereof.
Background technology
In power electronics, switching power circuit and various motor-drive circuit, the highest operating frequency will be big
The volume of amplitude reduction passive device therein (inductance and electric capacity) and power attenuation above thereof, but big to what circuit used
Switch diode proposes shorter reverse recovery time, the requirement of lower switching loss.At present, should in these circuit
Recover and Ultrafast recovery diode with most the fast of PIN structural that remain.But common PIN diode does not possess reverse soft extensive
Multiple characteristic, there will be big reversed peak restoring current and peak-inverse voltage, makes the damage of translation circuit in reversely restoring process
Consumption and electromagnetic interference (EMI) increase, and the steady operation of diode and main switching device are caused threat simultaneously.Selection has
The high-voltage fast recovery of soft recovery characteristics can significantly reduce these adverse effects;For high back-pressure fast recovery diode to
Obtain soft fast characteristic, when it is critical only that control forward conduction, be stored in the excess carrier in PIN diode drift region (N-district)
Distribution, if it is low to obtain the carrier concentration of distribution at the P+N-knot, and the concentration at N+N-knot is high
" inverted trapezoidal " is distributed, it will obtain the bigger soft recovery factor, softer recovery characteristics.Combine PIN diode and Schottky
PIN/ Schottky compound diode (MPS) diode of diode advantage has faster, softer reverse recovery characteristic, such as the U.S.
Patent US7, the characteristic described by 071,525 B2.Structure as shown in Figure 1, this structure can promote soft recovery characteristics, if but
Reach faster recovery characteristics, it is necessary to increase P+ and tie spacing, can cause the shielding action of schottky junction is weakened, reverse leakage current
Increase；P+ knot spacing is little, then the carrier being injected into drift region is too much, reduces speed.The most extensive simultaneously for high-power high voltage
The lifting of multiple diode reverse snowslide surge capacity, the terminal protection of chip is most important, and the potential dividing ring structure generally used is deposited
The low shortcoming of ability at generation dynamic current silk, varying doping terminal extension technology (VLD) is demonstrated to be effectively improved avalanche resistance and hits
Wear ability, but manufacture process need to increase low concentration p type impurity and inject, and adds work step, for the problems referred to above, the invention provides
A kind of soft fast recovery diode of polyhybird structure and preparation method thereof, the method uses Schottky mixing high-concentration and low-concentration PN junction knot
Structure, and synchronize to manufacture varying doping plane terminal (VLD) protection, improve breakdown voltage and Surge handling capability, when reducing recovery
Between, form soft recovery characteristics, and can reach good Low dark curient effect.
Summary of the invention
Present invention compartment of terrain arrangement on N-/N/N+ type silicon chip produces the P+/N-knot of high concentration, schottky junction, low dense
The P-/N-knot of degree, schottky junction structure, by increasing P-/N-structure, reduce hole injection efficiency, when reducing Reverse recovery
Between, avoid again Schottky junction barrier height reduction shortcoming, reach the comprehensive of soft fast recovery and Low dark curient；With P-/N-knot shape simultaneously
Become VLD terminal structure to ensure that high voltage and high Surge handling capability, simplify again manufacturing process, reduce cost.
For the fast recovery diode of MPS structure, it is that PIN diode and Schottky diode junction are combined, such as Fig. 1
Shown in, compartment of terrain arrangement P+ knot and schottky junction, Schottky junction barrier height is low, is first begin to conducting, when low current density,
Conduction voltage drop is little, and recovery time is fast；But when high current density, conduction voltage drop causes conduction voltage drop owing to drift zone resistance is big
Greatly, far above PIN structural diode, losing ground, when reverse, along with voltage increases, image force reason makes reverse leakage
Becoming big, power consumption increases；Adding the PIN diode of P+ knot, during forward conduction, under low current density, schottky junction first turns on,
Conduction voltage drop is low, and when high current density, the pressure drop that P+ forges is higher than the potential barrier of PN junction, and during such as 0.7V, PN junction turns on, P+ knot to
Injection hole, drift region, drift zone resistance diminishes through the modulation in hole, makes overall pressure drop diminish.Time reversely, owing to P+ ties
Extension, can be formed below shielding at schottky junction, it is to avoid Schottky barrier reduces the leakage current caused and increases.At Reverse recovery
Time, schottky junction provides leakage path, it is possible to quickly take excess carriers away, forms soft fast recovery characteristics.But P+ junction area
There is a trade-off relation with schottky junction area, if schottky junction area is excessive, time reverse, the shielding action of P+ weakens, electric leakage
Stream increases, and forward voltage drop becomes big；If schottky junction area is too small, i.e. P+ knot spacing is narrow, is injected into the surplus of drift region during forward
Carrier increases, and becomes reverse recovery time big.
It is illustrated in figure 2 the new structure of present invention design.At (P+/N-knot)+(schottky junction)+(P+/N-knot)
On architecture basics, add P-/N-and tie, formation (P+/N-knot)+(schottky junction)+(P-/N-knot)+(schottky junction)+
(P+/N-knot) structure.During forward conduction, under low current density, schottky junction first turns on, then P-/N-conducting, due to P-
Knot concentration is low, is injected into drift region (N-district) carrier few, and recovery time can be fast, and conduction voltage drop keeps low-level.At big electric current
During density, when the pressure drop that P+ forges is higher than the potential barrier of PN junction, P+N-ties conducting, and P+ knot injects a large amount of holes, drift to drift region
District's resistance diminishes through the modulation in hole, makes overall pressure drop diminish.Time reversely, owing to P+ knot and P-knot all extend, at Xiao Te
Base junction is formed below shielding, it is to avoid Schottky barrier reduces the leakage current caused and increases.When Reverse recovery, schottky junction carries
Supply leakage path, can quickly take excess carriers away, form soft fast recovery characteristics.
Generally fast recovery diode is in use, is not used under nominal high current density, such as 10 ampere power diodes,
Normally it is used only in 2 amperes, only just applies under big electric current when there being surge impact.If accomplishing when normally using, only
Schottky junction and P-knot conducting, and P+ knot does not turns on, speed can be faster.The concentration of design P+ and P-and the spacing of P+ to P-
Most important.
Chip protection terminal structure can use the structures such as field plate, potential dividing ring, JTE, VLD, as used VLD structure, terminal
Shi He P-district in the present invention of adulterating is carried out simultaneously, as it is shown on figure 3, then decrease work step, reduces cost.
The concentration in P-district is the lowest, but cannot be below 1E12/cm2, in conjunction with the requirement of VLD terminal, the present invention sets
P-district concentration at 5E12～5E13/cm2, the concentration in P+ district is the denseest, it is ensured that P+/N knot conducting in evening, the present invention is set as
P+ district concentration is more than 1E14/cm2;P+ and P-district limit spacing 5～35um.
The silicon chip of extension or diffusion can use multiple structure, such as N+/N/N-layer, helpful to soft recovery characteristics.
The preparation method of the soft fast recovery diode of high pressure of the present invention, its step includes: N-type epitaxial wafer (or diffusion sheet) is raw
Long field oxide SiO2--photoetching P-district injects light boron knot photoetching P+ district and injects dense boron knot photoetching active area--
Evaporation or sputtering barrier metal--silicide formation--front anode electrode metal lithographic metal--corrosion metal back-side gold
Belonging to, described P-district concentration is at 5E12～5E13/cm2, P+ district concentration is more than 1E14/cm2;P+ and P-district limit spacing 5～
35um。
The fast recovery characteristics that beneficial effect (1) is manufactured by this scheme reduces more than 15% reverse recovery time, and softness is also
Being increased slightly, leakage current keeps consistent, and conduction voltage drop is bigger, but in tolerance interval;(2) the VLD terminal that the present invention uses
Protection structure, owing to completing with P-district simultaneously, decreases work step, reduces cost.
Accompanying drawing explanation
The schematic diagram of Fig. 1 standard MPS structure diodes;
Fig. 2 polyhybird of the present invention structure soft fast recovery diode generalized section;
The soft fast recovery diode schematic surface of the polyhybird structure of Fig. 3 present invention.
Detailed description of the invention
Below by way of specific embodiment, the invention will be further described, but embodiment is not limiting as protection scope of the present invention.
0014 embodiment
In silicon epitaxial wafer (N-district thickness 45um) upper growth oxide layer 1um, photoetching P-district, inject B11(1E13cm2), knot (knot
Deep 4um), photoetching P+ district, inject B11(2E15/cm2), knot (6um), photoetching active area, splash-proofing sputtering metal Pt, 450 DEG C of alloys,
Removing Pt, evaporated metal AL, photoetching corrosion metal, thinning back side 250um, evaporate TiNiAg metal, P+ district and P-district all use
Square, limit spacing is that 18um, VLD terminal divides 3rd district, and dutycycle is respectively 75%, 50%, 25%.
Gained diode reverse cut-off (puncturing) voltage 720V, Trr: 30ns, reverse leakage current 2uA, VF:1.7V, softness
1.1。
Certainly, those of ordinary skill in the art is it should be appreciated that above embodiment is intended merely to explanation originally
Invention, and it is not intended as limitation of the invention, as long as in the spirit of the present invention, to embodiment described above
Change, deformation all will fall in the range of claims of the present invention.
Claims (4)
1. at the soft fast recovery diode of a kind of polyhybird structure, its structure includes: compartment of terrain arrangement on N-/N/N+ type silicon chip
Produce the P+/N-knot of high concentration, schottky junction, the P-/N-knot of low concentration, schottky junction structure, when reducing Reverse recovery
Between.
Polyhybird structure diodes the most according to claim 1, it is characterised in that in former MPS structure, add P-/
N-structure, the P-district concentration of setting is at 5E12～5E13/cm2, the concentration in P+ district is more than 1E14/cm2;P+ and P-district limit spacing 5
～35um.
3. a preparation method for polyhybird structure fast recovery diode, its step includes: on silicon N-type epitaxial wafer or diffusion sheet
It is initially formed P-knot by implanting p-type impurity mode and VLD protects terminal, then form P by injecting or spreading dense p type impurity mode
+ knot, then forms schottky barrier layer and metal electrode layer.
The preparation method of diode the most according to claim 3, it is characterised in that P-layer and VLD terminal are to carry out simultaneously.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610353299.8A CN105826399A (en) | 2016-05-25 | 2016-05-25 | Soft fast recovery diode of multi-mixture structure and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610353299.8A CN105826399A (en) | 2016-05-25 | 2016-05-25 | Soft fast recovery diode of multi-mixture structure and preparation method thereof |
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|---|---|
| CN105826399A true CN105826399A (en) | 2016-08-03 |
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| CN201610353299.8A Pending CN105826399A (en) | 2016-05-25 | 2016-05-25 | Soft fast recovery diode of multi-mixture structure and preparation method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298512A (en) * | 2016-09-22 | 2017-01-04 | 全球能源互联网研究院 | A kind of fast recovery diode and preparation method thereof |
| CN106571402A (en) * | 2016-11-18 | 2017-04-19 | 吉林瑞能半导体有限公司 | Fast recovery diode and manufacturing method thereof |
| CN109103094A (en) * | 2018-07-13 | 2018-12-28 | 张家港意发功率半导体有限公司 | A kind of preparation method mixing PIN/ Schottky fast recovery diode |
| CN109148605A (en) * | 2017-06-19 | 2019-01-04 | 宁波比亚迪半导体有限公司 | Fast recovery diode and preparation method, electronic equipment |
| CN111211157A (en) * | 2018-11-21 | 2020-05-29 | 深圳比亚迪微电子有限公司 | Fast recovery diode and preparation method thereof |
| CN112310188A (en) * | 2019-07-23 | 2021-02-02 | 珠海格力电器股份有限公司 | Lateral variable doping terminal structure and manufacturing method thereof |
| CN112786708A (en) * | 2021-03-04 | 2021-05-11 | 深圳吉华微特电子有限公司 | Ultra-low VF soft fast recovery diode and manufacturing method thereof |
| CN113053993A (en) * | 2019-12-27 | 2021-06-29 | 株洲中车时代半导体有限公司 | Fast recovery diode chip |
| CN114203830A (en) * | 2021-11-30 | 2022-03-18 | 深圳基本半导体有限公司 | FRD structure and manufacturing method and application thereof |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298512A (en) * | 2016-09-22 | 2017-01-04 | 全球能源互联网研究院 | A kind of fast recovery diode and preparation method thereof |
| CN106298512B (en) * | 2016-09-22 | 2024-05-14 | 全球能源互联网研究院 | Fast recovery diode and preparation method thereof |
| CN106571402A (en) * | 2016-11-18 | 2017-04-19 | 吉林瑞能半导体有限公司 | Fast recovery diode and manufacturing method thereof |
| CN106571402B (en) * | 2016-11-18 | 2024-03-29 | 吉林瑞能半导体有限公司 | Fast recovery power diode and manufacturing method thereof |
| CN109148605A (en) * | 2017-06-19 | 2019-01-04 | 宁波比亚迪半导体有限公司 | Fast recovery diode and preparation method, electronic equipment |
| CN109148605B (en) * | 2017-06-19 | 2022-02-18 | 比亚迪半导体股份有限公司 | Fast recovery diode, preparation method and electronic equipment |
| CN109103094B (en) * | 2018-07-13 | 2021-07-16 | 张家港意发功率半导体有限公司 | Preparation method of hybrid PIN/Schottky fast recovery diode |
| CN109103094A (en) * | 2018-07-13 | 2018-12-28 | 张家港意发功率半导体有限公司 | A kind of preparation method mixing PIN/ Schottky fast recovery diode |
| CN111211157A (en) * | 2018-11-21 | 2020-05-29 | 深圳比亚迪微电子有限公司 | Fast recovery diode and preparation method thereof |
| EP3886175A4 (en) * | 2018-11-21 | 2021-12-29 | BYD Semiconductor Company Limited | Fast recovery diode and manufacturing method thereof |
| US20220059707A1 (en) * | 2018-11-21 | 2022-02-24 | Byd Semiconductor Company Limited | Fast recovery diode and manufacturing method thereof |
| CN112310188A (en) * | 2019-07-23 | 2021-02-02 | 珠海格力电器股份有限公司 | Lateral variable doping terminal structure and manufacturing method thereof |
| CN113053993A (en) * | 2019-12-27 | 2021-06-29 | 株洲中车时代半导体有限公司 | Fast recovery diode chip |
| CN113053993B (en) * | 2019-12-27 | 2022-06-24 | 株洲中车时代半导体有限公司 | Fast recovery diode chip |
| CN112786708B (en) * | 2021-03-04 | 2022-03-08 | 深圳吉华微特电子有限公司 | Ultra-low VF soft fast recovery diode |
| CN112786708A (en) * | 2021-03-04 | 2021-05-11 | 深圳吉华微特电子有限公司 | Ultra-low VF soft fast recovery diode and manufacturing method thereof |
| CN114203830A (en) * | 2021-11-30 | 2022-03-18 | 深圳基本半导体有限公司 | FRD structure and manufacturing method and application thereof |
| CN114203830B (en) * | 2021-11-30 | 2023-02-24 | 深圳基本半导体有限公司 | FRD structure and manufacturing method and application thereof |
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