CN102709317B - Low-threshold voltage diode - Google Patents
Low-threshold voltage diode Download PDFInfo
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- CN102709317B CN102709317B CN201210186331.XA CN201210186331A CN102709317B CN 102709317 B CN102709317 B CN 102709317B CN 201210186331 A CN201210186331 A CN 201210186331A CN 102709317 B CN102709317 B CN 102709317B
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- voltage
- heavily doped
- diode
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Abstract
The invention discloses a low-threshold voltage diode, and belongs to the technical field of semiconductor devices. A depletion region of a PN-junction diode is reduced and enlarged to control the turning-on and turning-off of the diode, so that the device has a current channel under low forward voltage. An anode ohm contact structure is introduced, so that the device can generate forward current during forward conduction under the low forward voltage; when anode voltage is raised to enable an anode Schottky structure to be turned on, the forward current can be raised; and when the raised anode voltage is sufficient to turn on a PN junction, the forward current of the PN junction can further raise the forward current of the diode. During the reverse conduction of the device, a conducting channel is pinched off under low reverse voltage, a lightly-doped epitaxial layer can bear raised reverse voltage, and the anode Schottky structure can help to reduce reverse leakage current. The low threshold voltage, high forward current, low reverse leakage current and good reverse recovery characteristic of the diode can be realized.
Description
Technical field
The invention belongs to technical field of semiconductor device, relate to low turn-on voltage diode.
Background technology
In electronic applications, diode is one of the most frequently used base electronic components and parts.PN junction diode and Schottky diode are two main quasi-tradition rectifier diodes.Wherein PN junction diode cut-in voltage is larger, but good stability can work in high voltage, is that minority carrier devices and leakage current are less, but because sub-storage effect less makes the device turn-off time longer, turn-off power loss is larger.
Schottky diode does not utilize P type semiconductor to contact with N type semiconductor to form PN junction principle makes, but utilizes metal contact the metal-semiconductor junction principle making of formation with semiconductor, so forward cut-in voltage is less.Owing to being majority carrier conduction, so forward current is larger, but reverse leakage current is also larger.The not few sub-storage effect of Schottky diode, so turn-off power loss is minimum, can be applied to high frequency situations simultaneously.
In order to improve diode behavior, PiN diode has been proposed both at home and abroad, Junction Barrier Controlled rectifier JBS (JBS:Junction Barrier Schottky Rectifier), mix PiN/ Schottky rectifier MPS (MPS:Merged P-i-N/Schottky Rectifier), MOS controls the devices such as diode MCD (MCD:MOS Controlled Diode).
Between P type and N type semiconductor material, add the low-doped intrinsic semiconductor layer of thin layer, the diode of this P-i-N structure of composition is exactly PiN diode.When providing forward voltage for PiN diode, the charge carrier in P district and N district is injected into intrinsic region simultaneously.But because the doping content of intrinsic region is lower, be easy to form large injection when adding positive voltage, it is compound in a large number that a large amount of electronics in intrinsic region and hole can not be carried out as PN junction diode, conventionally can postpone a period of time.Due to this delay phenomenon, the resistivity of insulation layer will be very low.Intrinsic region also can help device well withstand voltage, but more unfavorable when a large amount of few son in intrinsic region turn-offs for device, and the few son that oppositely extracts intrinsic region can affect the frequency characteristic of device, and increases turn-off power loss.
The proposition of junction barrier schottky JBS (JBS:Junction Barrier Schottky Rectifier) structure and mixing PiN/ Schottky rectifier MPS (MPS:Merged P-i-N/Schottky Rectifier) structure, makes the advantage of PN junction and Schottky junction structure obtain combination.Wherein utilize the advantage that Schottky diode cut-in voltage is lower during JBS forward, device just can be opened in 0.3V left and right, be majority carrier conduction during forward simultaneously, makes device forward current large, conduction loss decline.In the time of oppositely, utilize the characteristic of PN junction diode, make device oppositely withstand voltage good than Schottky with reverse leakage properties of flow.
Summary of the invention
In order to reduce better forward cut-in voltage, to improve device forward current and reduce break-over of device power consumption, the invention provides a kind of low turn-on voltage diode, it has anode ohmic contact, Schottky junction structure and junction field tubular construction.The introducing of junction field tubular construction, makes device cut-in voltage very low, makes device have high breakdown voltage and less leakage current.Because positive anode ohmic contact and Schottky junction structure can improve the forward current of device, this diode can obtain low-down conduction voltage drop.Under reverse voltage, the pinch off of the conducting channel of semiconductor surface has been accelerated in the depletion region of anode Schottky junction structure, also contributes to reduce device creepage,
Technical solution of the present invention is as follows:
A low turn-on voltage diode, its basic structure as shown in Figure 1, comprises N
+substrate 2, be positioned at N
+the metallization negative electrode 1 at substrate 2 back sides and be positioned at N
+the N in substrate 2 fronts
-epitaxial loayer 3; N
-epitaxial loayer 3 surfaces are metallization anodes 8, N
-epitaxial loayer 3 both sides, top have respectively 6 sides, 6, two P type heavily doped regions, a P type heavily doped region and have respectively a N-type heavily doped region 7; Metallization anode 8 is positioned at device top layer, covers all P types heavily doped region 6, N-type heavily doped region 7 and N
-the surface of epitaxial loayer 3; 6 belows, two P type heavily doped regions also have respectively dark P tagma 5,5, two, a dark P tagma and by a P type heavily doped region 6, are connected with metallization anode 8 respectively; The lateral dimension in dark P tagma 5 is greater than the lateral dimension of P type heavily doped region 6, two dark P tagmas 5 and the N between them
-epitaxial loayer 3 forms Yi Ge junction field effect transistor district 4.
Operation principle of the present invention:
A kind of low turn-on voltage diode provided by the present invention when the length in junction field area under control is larger, produces a current path in the middle of anode adds the depletion region that less positive voltage just can make technotron district.Anode ohmic contact device is only had want current path just can be between anode and negative electrode generation current, even if anode institute making alive is also not enough to open schottky junction and PN junction produces the large electric current of forward.The introducing of junction field tubular construction, makes that conducting channel is by pinch off under very little reverse voltage, and the reverse voltage of increase is mainly born by low-doped epitaxial loayer, greatly reduces leakage current and has improved puncture voltage.Under reverse voltage, the pinch off of semiconductor surface conducting channel has been accelerated in the depletion region of Schottky junction structure, has realized better the lifting of devices switch characteristic.Now take Fig. 1 as example, operation principle of the present invention is described.
A kind of low turn-on voltage diode provided by the present invention, when metallization anode 8 is with respect to metallization negative electrode 1 while adding no-voltage, because the doping content in dark P tagma 5 is far longer than N
-the doping content of epitaxial loayer 3, dark P tagma 5 and N
-the depletion region of the PN junction that epitaxial loayer 3 forms, to 3 expansions of N-epitaxial loayer, makes the N in junction field area under control 4
-epitaxial loayer 3 is in spent condition; When metallization anode 8 adds very little forward voltage with respect to metallization negative electrode 1, positive voltage is received by P type heavily doped region 6 and metallization anode 8 in the dark P tagma 5 in junction field effect transistor district 4, makes dark P tagma 5 and N
-the depletion region of the PN junction that epitaxial loayer 3 forms dwindles, the N in junction field effect transistor district 4
-epitaxial loayer 3 conducting channels are opened, and raceway groove forms conductive path together with N-type heavily doped region 7 in device, thus diode forward conducting.When metallization anode 8 adds reverse voltage with respect to metallization negative electrode 1, the conducting channel in junction field area under control 4, by pinch off, continues to increase reverse voltage, and depletion layer is to the N near metallization negative electrode 1 one sides
-epitaxial loayer 3 expansions, thus make diode structure of the present invention can bear very high reverse breakdown voltage, and surface metalation anode 8 and N
-the depletion region of the Schottky junction structure that epitaxial loayer 3 forms makes leakage current smaller.
By MEDICI simulation software, provided a kind of low turn-on voltage diode has as shown in Figure 1 been carried out to emulation.Emulation device parameters is: dark P tagma doping content is 3 * 10
17cm
-3, thickness is 0.65 μ m; N
-epitaxial loayer doping 3.4 * 10
15cm
-3, thickness is 9.5 μ m; N-type heavily doped region doping 8 * 10
19cm
-3, P type heavily doped region doping 1.8 * 10
20cm
-3, N-type substrate zone doping 1 * 10
20cm
-3, emulation cellular width is 2 μ m, and dark P tagma spacing is 0.8um, and surface metal work function is 4.8eV.
Fig. 2 is the forward conduction voltage drop simulation curve of above-mentioned a kind of low turn-on voltage diode.As seen from the figure, approximately the forward voltage of 0.2V just can make the N between dark P tagma
-epitaxial loayer is opened current channel.Because anode surface ohmic contact is communicated with the current channel between dark P tagma, make just has larger forward current under less forward voltage simultaneously.
Fig. 3 is the puncture voltage simulation curve figure of above-mentioned a kind of low turn-on voltage diode.Dark P tagma and N
-the PN junction that epitaxial loayer forms bears puncture voltage, and depletion region is to N
-epitaxial loayer expansion.As seen from the figure, the depletion region between dark P tagma has reduced leakage current, and the depletion region that anode Schottky structure forms simultaneously also greatly reduces the leakage current of device.
In sum, a kind of low turn-on voltage diode provided by the invention, owing to combining PN junction, ohmic contact and Schottky junction structure, also greatly improved forward current, and reverse leakage current has also obtained reduction when reducing cut-in voltage.
Accompanying drawing explanation
Fig. 1 is a kind of low turn-on voltage diode structural representation provided by the invention
Wherein, the 1st, metallization negative electrode, the 2nd, N
+substrate zone, the 3rd, N
-epitaxial loayer, the 4th, junction field effect transistor district, the 5th, dark P tagma, the 6th, P type heavily doped region, the 7th, N-type heavily doped region, the 8th, metallization anode.
Fig. 2 is the forward conduction voltage drop simulation curve figure of a kind of low turn-on voltage diode provided by the present invention.
Fig. 3 is the reverse breakdown voltage simulation curve figure of a kind of low turn-on voltage diode provided by the present invention.
Embodiment
Adopt a kind of low turn-on voltage diode of the present invention, can realize less forward cut-in voltage, low conduction voltage drop, high reverse breakdown voltage, less reverse leakage current, good reverse recovery characteristic.Along with the development of semiconductor technology, adopt the present invention can also make more high voltage low power consumption device.
A low turn-on voltage diode, its basic structure as shown in Figure 1, comprises N
+substrate 2, be positioned at N
+the metallization negative electrode 1 at substrate 2 back sides and be positioned at N
+the N in substrate 2 fronts
-epitaxial loayer 3; N
-epitaxial loayer 3 surfaces are metallization anodes 8, N
-epitaxial loayer 3 both sides, top have respectively 6 sides, 6, two P type heavily doped regions, a P type heavily doped region and have respectively a N-type heavily doped region 7; Metallization anode 8 is positioned at device top layer, covers all P types heavily doped region 6, N-type heavily doped region 7 and N
-the surface of epitaxial loayer 3; 6 belows, two P type heavily doped regions also have respectively dark P tagma 5,5, two, a dark P tagma and by a P type heavily doped region 6, are connected with metallization anode 8 respectively; The lateral dimension in dark P tagma 5 is greater than the lateral dimension of P type heavily doped region 6, two dark P tagmas 5 and the N between them
-epitaxial loayer 3 forms Yi Ge junction field effect transistor district 4.
In such scheme: 1, do not have overlapping region between described N-type heavily doped region 7 and dark P tagma 5; 2, metallization negative electrode 1 and metallization anode 8 can adopt aluminium, copper, tungsten or other metallic conduction material to make; 3, device semiconductor material can adopt the semi-conducting material manufacturings such as body silicon, carborundum, GaAs, indium phosphide or germanium silicon.。
A low turn-on voltage diode, its concrete methods of realizing comprises: choose N-type <100> crystal orientation zone melting single-crystal substrate, N
-outer layer growth, dark P tagma boron inject, and P type heavily doped region boron injects, and N-type heavily doped region arsenic injects, etching ohm hole, front-side metallization, metal etch, back face metalization, passivation etc.
Claims (4)
1. a low turn-on voltage diode, comprises N
+substrate (2), be positioned at N
+the metallization negative electrode (1) at substrate (2) back side and be positioned at N
+the N that substrate (2) is positive
-epitaxial loayer (3); N
-epitaxial loayer (3) surface is metallization anode (8), N
-epitaxial loayer (3) both sides, top have respectively a P type heavily doped region (6), and side, two P type heavily doped regions (6) has respectively a N-type heavily doped region (7); Metallization anode (8) is positioned at device top layer, covers all P types heavily doped regions (6), N-type heavily doped region (7) and N
-the surface of epitaxial loayer (3); Below, two P type heavily doped regions (6) also has respectively a dark P tagma (5), and two dark P tagmas (5) are connected with metallization anode (8) by a P type heavily doped region (6) respectively; The lateral dimension in dark P tagma (5) is greater than the lateral dimension of P type heavily doped region (6), two dark P tagmas (5) and the N between them
-epitaxial loayer (3) forms Yi Ge junction field effect transistor district (4).
2. low turn-on voltage diode according to claim 1, is characterized in that, between described N-type heavily doped region (7) and dark P tagma (5), does not have overlapping region.
3. low turn-on voltage diode according to claim 1, is characterized in that, described metallization negative electrode (1) and metallization anode (8) adopt aluminium, copper, tungsten or other metallic conduction material to make.
4. low turn-on voltage diode according to claim 1, is characterized in that, described low turn-on voltage diode adopts body silicon, carborundum, GaAs, indium phosphide or germanium silicon semiconductor material to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210186331.XA CN102709317B (en) | 2012-06-07 | 2012-06-07 | Low-threshold voltage diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210186331.XA CN102709317B (en) | 2012-06-07 | 2012-06-07 | Low-threshold voltage diode |
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| Publication Number | Publication Date |
|---|---|
| CN102709317A CN102709317A (en) | 2012-10-03 |
| CN102709317B true CN102709317B (en) | 2014-12-03 |
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|---|---|---|---|
| CN201210186331.XA Expired - Fee Related CN102709317B (en) | 2012-06-07 | 2012-06-07 | Low-threshold voltage diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105006490B (en) * | 2015-07-28 | 2018-10-30 | 李泽宏 | A kind of diode with high Antisurge current ability |
| CN106024915B (en) * | 2016-07-25 | 2019-01-01 | 电子科技大学 | A kind of super junction Schottky diode |
| CN107946371B (en) * | 2017-01-24 | 2024-04-05 | 重庆中科渝芯电子有限公司 | Super-barrier rectifier with Schottky barrier contact and manufacturing method thereof |
| CN107946352B (en) * | 2017-09-20 | 2023-10-24 | 重庆中科渝芯电子有限公司 | Ohmic contact and Schottky contact super barrier rectifier and manufacturing method thereof |
| CN109660238A (en) * | 2018-12-27 | 2019-04-19 | 徐国强 | Tie keyholed back plate |
| CN116072708B (en) * | 2023-03-07 | 2023-06-16 | 青岛嘉展力芯半导体有限责任公司 | Diode, preparation method thereof and electronic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101771088A (en) * | 2010-01-21 | 2010-07-07 | 复旦大学 | PN (positive-negative) junction and Schottky junction mixed type diode and preparation method thereof |
| CN101859703A (en) * | 2010-05-14 | 2010-10-13 | 深圳市芯威科技有限公司 | Low turn-on voltage diode and preparation method thereof |
| CN101976687A (en) * | 2010-10-21 | 2011-02-16 | 电子科技大学 | Fast recovery metal oxide semiconductor diode with low power consumption |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58155769A (en) * | 1982-03-12 | 1983-09-16 | Hitachi Ltd | Semiconductor rectifier diode |
| JP2001168351A (en) * | 1999-12-13 | 2001-06-22 | Fuji Electric Co Ltd | Semiconductor device |
-
2012
- 2012-06-07 CN CN201210186331.XA patent/CN102709317B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101771088A (en) * | 2010-01-21 | 2010-07-07 | 复旦大学 | PN (positive-negative) junction and Schottky junction mixed type diode and preparation method thereof |
| CN101859703A (en) * | 2010-05-14 | 2010-10-13 | 深圳市芯威科技有限公司 | Low turn-on voltage diode and preparation method thereof |
| CN101976687A (en) * | 2010-10-21 | 2011-02-16 | 电子科技大学 | Fast recovery metal oxide semiconductor diode with low power consumption |
Non-Patent Citations (1)
| Title |
|---|
| JP昭58-155769A 1983.09.16 * |
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