CN101976687A - Fast recovery metal oxide semiconductor diode with low power consumption - Google Patents
Fast recovery metal oxide semiconductor diode with low power consumption Download PDFInfo
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Abstract
A fast recovery metal oxide semiconductor diode with low power consumption belongs to the technical field of semiconductor devices. The diode is provided with a junction field effect transistor region (4) and an electron accumulation layer structure (12), wherein the junction field effect transistor region (4) comprises two deep P regions (5) and an N-epitaxial layer (3) between the two deep P regions; and the electron accumulation layer structure (12) comprises two N heavily doped regions (7), the N-epitaxial layer (3), a gate oxide layer (8) on the surface of the N-epitaxial layer (3) and a gate electrode (9). By utilizing the following surface electric field effect of the metal oxide semiconductor structure: a plurality of sub-accumulation layers are formed in case of forward voltage while a plurality of sub-depletion layers are formed in case of backward voltage, the diode can obtain quite low turn-on voltage drop and can simultaneously bear high reverse breakdown voltage and leak less current, thus better realizing compromise between the forward turn-on voltage drop and the backward recovery time.
Description
Technical field
The invention belongs to technical field of semiconductor device, relate to metal-oxide-semiconductor diode (Schottky diode), specifically be meant a kind of fast recovery metal-oxide-semiconductor diode with low-power consumption.
Background technology
In electronic circuit, diode is one of the most frequently used base electronic components and parts; In Power Electronic Circuit, diode is more followed someone like his shadow with switching device, and is indispensable.Traditional rectifier diode mainly contains PN junction diode and Schottky diode two classes.Wherein PN junction diode forward conduction voltage drop is bigger, and reverse recovery time is longer, but the stability of PN junction diode better, can work in high voltage; And Schottky diode forward conduction voltage drop when low-voltage is little, and reverse recovery time is short, but the leakage current when Schottky diode is reverse is higher relatively, and unstable.In order to improve diode behavior, Junction Barrier Controlled rectifier JBS (JBS:Junction Barrier Controlled Schottky Rectifier) has been proposed both at home and abroad, mix PiN/ Schottky rectifier MPS (MPS:Merged P-i-N/Schottky Rectifier), MOS control diode MCD devices such as (MCD:MOS Controlled Diode).
Fast recovery diode (being called for short FRD) is the semiconductor diode that a kind of switching characteristic is good, reverse recovery time is short, be mainly used in the electronic circuits such as Switching Power Supply, PWM pulse width modulator, frequency converter, use as high-frequency rectification diode, fly-wheel diode or damper diode.The internal structure of fast recovery diode is different with common PN junction diode, and it belongs to the PiN junction diode, has promptly increased base i in the middle of P type silicon materials and N type silicon materials, constitutes the PiN knot.Because of the base is very thin, QRR is very little, so the reverse recovery time of fast recovery diode is shorter, forward voltage drop is lower, and reverse breakdown voltage (withstand voltage) is higher.Fast recovery diode adopts gold doping on manufacturing process, simple technologies such as diffusion can obtain higher switching speed, also can obtain simultaneously higher withstand voltage.Be generally hundreds of nanosecond the reverse recovery time of fast recovery diode, and forward voltage drop is about 0.7V, and forward current is several amperes of extremely several kiloamperes, and peak-inverse voltage can reach hundreds of to several kilovolts.The QRR of Ultrafast recovery diode further reduces, and makes to be low to moderate for tens nanoseconds its reverse recovery time.
Schottky diode is the abbreviation of Schottky barrier diode (Schottky Barrier Diode abbreviates SBD as).Schottky diode is the low-power consumption of coming out in recent years, big electric current, ultra-speed semiconductor device.Schottky diode does not utilize P type semiconductor to contact with N type semiconductor to form the PN junction principle makes, but utilizes metal contact the metal-semiconductor junction principle making of formation with semiconductor.Schottky Rectifier is only used a kind of charge carrier (electronics) delivered charge, and therefore the accumulation at the no excess minority carrier in the potential barrier outside, does not exist Charge Storage problem (Qrr → 0), shows when switching characteristic is obtained and improves.Extremely lack its reverse recovery time (may diminish to several nanoseconds), forward conduction voltage drop is only about 0.4V, and rectified current can reach several thousand milliamperes.These good characteristics are that fast recovery diode is incomparable.
Because the reverse potential barrier of Schottky diode is thinner, and very easily punctures on its surface, so reverse breakdown voltage (oppositely withstand voltage) is lower, scarcely be higher than 60V, the highest only about 100V is so that limited its range of application.Because Schottky diode is subjected to thermal breakdown than PN junction diode is easier, reverse leakage current is bigger than PN junction diode.
In order to reduce forward voltage better, reduce power consumption and to improve the reliability of device, design a kind of low power consumption fast and recover metal-oxide-semiconductor diode, set up electron accumulation layer by the MOS structure during this device forward conduction, reduce the forward voltage drop of diode, acquisition is near the forward conduction voltage drop of Schottky diode since can bear very high puncture voltage when having junction field tubular construction reverse blocking and leakage current very little.
Summary of the invention
The invention provides a kind of low power consumption fast and recover metal-oxide-semiconductor diode, it has electron accumulation layer structure and junction field tubular construction, can obtain low-down conduction voltage drop (near the forward conduction voltage drop of Schottky diode), simultaneously can bear very high reverse breakdown voltage and leakage current very little, realized forward conduction voltage drop and compromise between reverse recovery time better.
Technical solution of the present invention is as follows:
A kind of low power consumption fast recovers metal-oxide-semiconductor diode, as shown in Figure 1, comprises metallization negative electrode 1, N
+Substrate zone 2, N
- Epitaxial loayer 3 and metallization anode 10; Described metallization negative electrode 1 is positioned at N
+Substrate zone 2 back sides, described N
- Epitaxial loayer 3 is positioned at N
+Substrate zone 2 fronts.Described low power consumption fast recovers metal-oxide-semiconductor diode and also comprises a junction field area under control 4 and an electron accumulation layer structure 12; Described junction field area under control 4 is by being positioned at N
-N in the epitaxial loayer 3 between two of same depth dark P tagmas 5 and two the dark P tagmas 5
-Epitaxial loayer constitutes, and two dark P tagmas 5 link to each other with metallization anode 10 by a P type heavily doped region 6 respectively.The N of described electron accumulation layer structure 12 between two P type heavily doped regions 6 above two dark P tagmas 5
-In the epitaxial loayer 3, by two N type heavily doped regions 7, gate oxide 8, gate electrode 9 and a N
- Epitaxial loayer 3 constitutes.Described two N type heavily doped regions 7 link to each other with metallization anode 10; The N of described gate oxide 8 between two N type heavily doped regions 7
- Epitaxial loayer 3 surfaces, described gate electrode 9 are positioned at gate oxide 8 surfaces and link to each other with metallization anode 10.
Operation principle of the present invention:
Be example now, operation principle of the present invention is described with Fig. 1.A kind of low power consumption fast provided by the present invention recovers metal-oxide-semiconductor diode, gate oxide 8 thickness of electron accumulation layer structure 12 extremely thin (between 5 to 100 nanometers), under very little forward voltage, the accumulation of electronics takes place in semiconductor surface consumingly under the gate oxide, thereby obtain low-down conduction voltage drop, very large current density.The introducing of junction field tubular construction makes that conducting channel is by pinch off under very little reverse voltage, and the reverse voltage of increase is mainly born by low-doped epitaxial loayer, greatly reduces leakage current and has improved puncture voltage.Thin gate oxide has quickened the pinch off of semiconductor surface conducting channel under reverse voltage, has realized forward conduction voltage drop and trading off between reverse recovery time better.
A kind of low power consumption fast provided by the present invention recovers metal-oxide-semiconductor diode, when metallization anode 10 adds no-voltage with respect to metallization negative electrode 1, because the doping content in dark P tagma 5 is far longer than N
-The doping content of epitaxial loayer 3, built-in electromotive force make the N in junction field area under control 4
-The N that epitaxial loayer and gate oxide 8 are just following
- Epitaxial loayer 3 just exhausts fully; When metallization anode 10 adds very little forward voltage with respect to metallization negative electrode 1, gate oxide 8 very thin thickness because of electron accumulation layer structure 12, the accumulation of majority carrier takes place in semiconductor surface under the gate oxide 8 consumingly, form the electron conduction raceway groove, junction field effect transistor district this moment receives positive voltage by P type heavily doped region 6 and metallization anode 10 at 4 dark P tagma 5, makes the N in junction field effect transistor district 4
- Epitaxial loayer 3 conducting channels are opened, thus the diode forward conducting; When metallization anode 10 added reverse voltage with respect to metallization negative electrode 1, the conducting channel in junction field area under control 4 was continued to increase reverse voltage by pinch off, and depletion layer is to the N near metallization negative electrode 1 one sides
- Epitaxial loayer 3 expansions, and the gate electrode 9 connection reverse voltages of electron accumulation layer structure 12 make the semiconductor surface under the gate oxide 8 quicken to exhaust at this moment, thereby make diode structure of the present invention can bear very high reverse breakdown voltage, and leakage current is very little, and oppositely recovering very, weak point can be low to moderate several nanoseconds.
By the MEDICI simulation software a kind of low power consumption fast as shown in Figure 1 that is provided is recovered metal-oxide-semiconductor diode and carried out emulation.The emulation device parameters is: dark P tagma doping content is 3.5 * 10
17Cm
-3, thickness is 0.65 μ m; N
-Epitaxial loayer mixes 3.4 * 10
15Cm
-3, thickness is 9 μ m; Gate oxide thickness is 8nm, and N type heavily doped region mixes 5 * 10
19Cm
-3, the heavy doping of P type mixes 5 * 10
19Cm
-3, N type substrate zone mixes 1 * 10
20Cm
-3, emulation cellular width is 2 μ m.Fig. 3 is the puncture voltage simulation curve figure that above-mentioned a kind of low power consumption fast recovers metal-oxide-semiconductor diode, Fig. 4 is the forward conduction voltage drop simulation curve, as seen from the figure, owing to adopted junction type field-effect tube structure and electron accumulation layer structure, not only increase puncture voltage, also reduced leakage current greatly; And recover metal-oxide-semiconductor diode for described a kind of low power consumption fast, because the existence of electron accumulation layer structure, when reducing conduction voltage drop, saturation current density is improved greatly, and the contradictory relation between forward conduction voltage drop and the reverse turn-off power loss has obtained better compromise.
In sum, a kind of low power consumption fast provided by the invention recovers metal-oxide-semiconductor diode, owing to combine junction field tubular construction and electron accumulation layer structure, also optimized the reverse recovery characteristic of diode when improving puncture voltage, thereby reduced turn-off power loss, also greatly reduce conduction loss, realized between forward conduction voltage drop and the turn-off power loss better compromise.Compare with traditional PiN diode, at 50A/cm
2Current density under, forward conduction voltage drop has reduced by 0.2 volt, can be low to moderate several nanoseconds reverse recovery time and puncture voltage can reach more than 100 volts.
Description of drawings
Fig. 1 is that a kind of low power consumption fast provided by the invention recovers the metal-oxide-semiconductor diode structural representation.
Wherein, the 1st, metallization negative electrode, the 2nd, N
+Substrate zone, the 3rd, N
-Epitaxial loayer, the 4th, junction field effect transistor district, the 5th, dark P tagma, the 6th, P type heavily doped region, the 7th, N type heavily doped region, the 8th, gate oxide, the 9th, gate electrode, the 10th, metallization anode, the 12nd, electron accumulation layer structure.
Fig. 2 is that a kind of low power consumption fast provided by the present invention recovers metal-oxide-semiconductor diode puncture voltage simulation curve figure.
Fig. 3 is the forward conduction voltage drop simulation curve figure that a kind of low power consumption fast provided by the present invention recovers metal-oxide-semiconductor diode.
Fig. 4 is the reverse recovery characteristic simulation curve figure that a kind of low power consumption fast provided by the present invention recovers metal-oxide-semiconductor diode.
Embodiment
Adopt a kind of low power consumption fast of the present invention to recover metal-oxide-semiconductor diode, can realize low conduction voltage drop, high reverse breakdown voltage, good reverse recovery characteristic is realized trading off between better forward conduction voltage drop and the turn-off power loss.Along with development of semiconductor, adopt the present invention can also make more low energy-consumption electronic device fast.
A kind of low power consumption fast recovers metal-oxide-semiconductor diode, as shown in Figure 1, comprises metallization negative electrode 1, N
+Substrate zone 2, N
- Epitaxial loayer 3 and metallization anode 10; Described metallization negative electrode 1 is positioned at N
+Substrate zone 2 back sides, described N
- Epitaxial loayer 3 is positioned at N
+Substrate zone 2 fronts.Described low power consumption fast recovers metal-oxide-semiconductor diode and also comprises a junction field area under control 4 and an electron accumulation layer structure 12; Described junction field area under control 4 is by being positioned at N
-N in the epitaxial loayer 3 between two of same depth dark P tagmas 5 and two the dark P tagmas 5
-Epitaxial loayer constitutes, and two dark P tagmas 5 link to each other with metallization anode 10 by a P type heavily doped region 6 respectively.The N of described electron accumulation layer structure 12 between two P type heavily doped regions 6 above two dark P tagmas 5
-In the epitaxial loayer 3, by two N type heavily doped regions 7, gate oxide 8, gate electrode 9 and a N
- Epitaxial loayer 3 constitutes.Described two N type heavily doped regions 7 link to each other with metallization anode 10; The N of described gate oxide 8 between two N type heavily doped regions 7
- Epitaxial loayer 3 surfaces, described gate electrode 9 are positioned at gate oxide 8 surfaces and link to each other with metallization anode 10.
In the such scheme, the gate oxide 8 in the described electron accumulation layer structure 12 can adopt silicon dioxide or other gate dielectric materials to make; Gate electrode 9 can adopt polysilicon or other gate material to make.
Low power consumption fast provided by the invention recovers metal-oxide-semiconductor diode, and its specific implementation method comprises: choose N type＜100〉crystal orientation zone melting single-crystal substrate, N
-Outer layer growth, dark P tagma boron inject, use dried oxygen method growth gate oxide (thickness range is 5 to 100 nanometers), deposit polysilicon gate, photoetching polysilicon gate and gate oxide, P type heavily doped region boron injects, N type heavily doped region arsenic injects, deposit thick oxide layer, etching ohm hole, front-side metallization, metal etch, back face metalization, passivation etc.
Semi-conducting materials such as also available carborundum, GaAs, indium phosphide or germanium silicon replace body silicon when making device.
Claims (3)
1. a low power consumption fast recovers metal-oxide-semiconductor diode, comprises metallization negative electrode (1), N
+Substrate zone (2), N
-Epitaxial loayer (3) and metallization anode (10); Metallization negative electrode (1) is positioned at N
+Substrate zone (2) back side, N
-Epitaxial loayer (3) is positioned at N
+Substrate zone (2) front; It is characterized in that described low power consumption fast recovers metal-oxide-semiconductor diode and also comprises a junction field area under control (4) and an electron accumulation layer structure (12); Described junction field area under control (4) is by being positioned at N
-Two dark P tagmas (5) of same depth and the N between two dark P tagmas (5) in the epitaxial loayer (3)
-Epitaxial loayer (3) constitutes, and two dark P tagmas (5) link to each other with metallization anode (10) by a P type heavily doped region (6) respectively; Described electron accumulation layer structure (12) is positioned at the N between two P type heavily doped regions (6) of two dark P tagmas (5) tops
-In the epitaxial loayer (3), by two N type heavily doped regions (7), a gate oxide (8), gate electrode (9) and N
-Epitaxial loayer (3) constitutes; Described two N type heavily doped regions (7) link to each other with metallization anode (10); Described gate oxide (8) is positioned at the N between two N type heavily doped regions (7)
-Epitaxial loayer (3) surface, described gate electrode (9) are positioned at gate oxide (8) surface and link to each other with metallization anode (10).
2. recover metal-oxide-semiconductor diode according to the described low power consumption fast of claim 1, it is characterized in that the gate oxide (8) in the described electron accumulation layer structure (12) is a thin gate oxide, its thickness is between 5 to 100 nanometers.
3. recover metal-oxide-semiconductor diode according to claim 1 or 2 described low power consumption fasts, it is characterized in that, the gate oxide (8) in the described electron accumulation layer structure (12) adopts silicon dioxide or other gate dielectric materials to make; Gate electrode (9) adopts polysilicon or other gate material to make.
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|---|---|---|---|
| CN2010105150632A CN101976687B (en) | 2010-10-21 | 2010-10-21 | Fast recovery metal oxide semiconductor diode with low power consumption |
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| CN101976687A true CN101976687A (en) | 2011-02-16 |
| CN101976687B CN101976687B (en) | 2012-04-25 |
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Cited By (13)
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| CN102709317A (en) * | 2012-06-07 | 2012-10-03 | 电子科技大学 | Low-threshold voltage diode |
| CN102820340A (en) * | 2012-08-31 | 2012-12-12 | 电子科技大学 | Shallow slot type metal oxide semiconductor diode |
| CN103618006A (en) * | 2013-10-30 | 2014-03-05 | 国家电网公司 | A fast recovery diode and a manufacturing method thereof |
| CN104810408A (en) * | 2014-01-24 | 2015-07-29 | 无锡华润华晶微电子有限公司 | Super barrier rectifier and manufacturing method thereof |
| CN105590965A (en) * | 2016-03-14 | 2016-05-18 | 电子科技大学 | Plane type metal oxide semiconductor diode with adjustable threshold voltage |
| CN105932072A (en) * | 2016-07-06 | 2016-09-07 | 电子科技大学 | Accumulated diode |
| CN109256427A (en) * | 2018-09-19 | 2019-01-22 | 电子科技大学 | A kind of SiC MOSFET element of integrated schottky diode |
| CN111341851A (en) * | 2020-03-16 | 2020-06-26 | 江阴新顺微电子有限公司 | Fast recovery diode chip with combined terminal structure and manufacturing process |
| CN114038919A (en) * | 2021-11-29 | 2022-02-11 | 电子科技大学 | Metal oxide semiconductor diode with ultralow reverse recovery charge |
| CN115132726A (en) * | 2022-09-02 | 2022-09-30 | 深圳芯能半导体技术有限公司 | Structure and manufacturing method of fast recovery power device and electronic equipment |
| CN115172445A (en) * | 2022-09-02 | 2022-10-11 | 深圳芯能半导体技术有限公司 | Structure and manufacturing method of fast recovery power device and electronic equipment |
| CN115295613A (en) * | 2022-10-08 | 2022-11-04 | 烟台台芯电子科技有限公司 | Fast recovery diode structure and manufacturing method thereof |
| CN116190420A (en) * | 2023-02-24 | 2023-05-30 | 上海林众电子科技有限公司 | Fast recovery diode structure and preparation method thereof |
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Cited By (21)
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| CN102709317B (en) * | 2012-06-07 | 2014-12-03 | 电子科技大学 | Low-threshold voltage diode |
| CN102709317A (en) * | 2012-06-07 | 2012-10-03 | 电子科技大学 | Low-threshold voltage diode |
| CN102820340A (en) * | 2012-08-31 | 2012-12-12 | 电子科技大学 | Shallow slot type metal oxide semiconductor diode |
| CN103618006B (en) * | 2013-10-30 | 2017-02-01 | 国家电网公司 | A fast recovery diode and a manufacturing method thereof |
| CN103618006A (en) * | 2013-10-30 | 2014-03-05 | 国家电网公司 | A fast recovery diode and a manufacturing method thereof |
| CN104810408A (en) * | 2014-01-24 | 2015-07-29 | 无锡华润华晶微电子有限公司 | Super barrier rectifier and manufacturing method thereof |
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| CN105590965B (en) * | 2016-03-14 | 2019-03-29 | 电子科技大学 | A kind of adjustable planar metal oxide semiconductor diode of cut-in voltage |
| CN105590965A (en) * | 2016-03-14 | 2016-05-18 | 电子科技大学 | Plane type metal oxide semiconductor diode with adjustable threshold voltage |
| CN105932072A (en) * | 2016-07-06 | 2016-09-07 | 电子科技大学 | Accumulated diode |
| CN109256427A (en) * | 2018-09-19 | 2019-01-22 | 电子科技大学 | A kind of SiC MOSFET element of integrated schottky diode |
| CN111341851A (en) * | 2020-03-16 | 2020-06-26 | 江阴新顺微电子有限公司 | Fast recovery diode chip with combined terminal structure and manufacturing process |
| CN114038919A (en) * | 2021-11-29 | 2022-02-11 | 电子科技大学 | Metal oxide semiconductor diode with ultralow reverse recovery charge |
| CN115172445A (en) * | 2022-09-02 | 2022-10-11 | 深圳芯能半导体技术有限公司 | Structure and manufacturing method of fast recovery power device and electronic equipment |
| CN115132726A (en) * | 2022-09-02 | 2022-09-30 | 深圳芯能半导体技术有限公司 | Structure and manufacturing method of fast recovery power device and electronic equipment |
| CN115172445B (en) * | 2022-09-02 | 2022-11-29 | 深圳芯能半导体技术有限公司 | Structure and manufacturing method of fast recovery power device and electronic equipment |
| CN115132726B (en) * | 2022-09-02 | 2022-11-29 | 深圳芯能半导体技术有限公司 | Structure and manufacturing method of fast recovery power device and electronic equipment |
| CN115295613A (en) * | 2022-10-08 | 2022-11-04 | 烟台台芯电子科技有限公司 | Fast recovery diode structure and manufacturing method thereof |
| CN115295613B (en) * | 2022-10-08 | 2023-01-03 | 烟台台芯电子科技有限公司 | Fast recovery diode structure and manufacturing method thereof |
| CN116190420A (en) * | 2023-02-24 | 2023-05-30 | 上海林众电子科技有限公司 | Fast recovery diode structure and preparation method thereof |
| CN116190420B (en) * | 2023-02-24 | 2024-03-26 | 上海林众电子科技有限公司 | Fast recovery diode structure and preparation method thereof |
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Effective date of registration: 20220402 Address after: 550000 No. 12, Duyun Road, Jinyang science and Technology Industrial Park, Guiyang National High tech Industrial Development Zone, Guiyang City, Guizhou Province Patentee after: GUIZHOU YAGUANG ELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 611731, No. 2006, West Avenue, Chengdu hi tech Zone (West District, Sichuan) Patentee before: University of Electronic Science and Technology of China |