CN103618006A - A fast recovery diode and a manufacturing method thereof - Google Patents
A fast recovery diode and a manufacturing method thereof Download PDFInfo
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- CN103618006A CN103618006A CN201310525160.3A CN201310525160A CN103618006A CN 103618006 A CN103618006 A CN 103618006A CN 201310525160 A CN201310525160 A CN 201310525160A CN 103618006 A CN103618006 A CN 103618006A
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- 238000011084 recovery Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052796 boron Inorganic materials 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 32
- -1 phosphonium ion Chemical class 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 8
- 230000000873 masking effect Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000000428 dust Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910001385 heavy metal Inorganic materials 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 15
- 238000002347 injection Methods 0.000 abstract description 15
- 239000007924 injection Substances 0.000 abstract description 15
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 15
- 239000011574 phosphorus Substances 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000001447 compensatory effect Effects 0.000 abstract 3
- 230000007423 decrease Effects 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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Abstract
The invention relates to a power semiconductor device and a manufacturing method thereof and specifically to a fast recovery diode and a manufacturing method thereof. A junction pushing is performed in an active region in order to form a P+ region and a P region. A junction forming process comprises: firstly performing boron injection in order to push a junction one to ten [mu]m; secondly performing phosphorus compensative injection, wherein a phosphorus injection condition requires that the amount of injected phosphorus only decreases the concentration of the P region close to the silicon surface but not reverses a junction; and performing active region compensative injection to form the P region with low surface concentration. Therefore, the amount of hole injection of the P region in forward conduction is decreased while the concentration on the two sides of a PN junction is guaranteed. When minority carrier lifetime control is used, excessive recombination centers are not required to be generated. Therefore, a series of parameters are optimized. The fast recovery diode and the manufacturing method thereof perform phosphorus compensative injection on the P region so as to achieve the decrease in the surface concentration of the P region. Therefore, the decrease in the number of the hole injection in forward conduction is actually achieved.
Description
Technical field
The present invention relates to a kind of power semiconductor device and manufacture method thereof, be specifically related to a kind of fast recovery diode and manufacture method thereof.
Background technology
During PIN diode conduction forward current, generally will from anode (P district) and negative electrode (N+ district) to drift region (I district) inject a large amount of charge carriers, from anode injected holes charge carrier in drift region the form storage electric charge with few son.Few son injects and makes drift region produce conductivity modulation effect, thereby reduces forward on-state voltage drop, this be PIN diode be also the sharpest edges of bipolar device.When the unexpected additional reverse voltage of diode in conducting just, during due to conducting, in drift region, stored a large amount of minority carriers, device can't turn-off at once.Only have these minority carriers are extracted out completely or neutralized, device just can really turn-off (being that device recovers reverse blocking capability), this process is called reversely restoring process, and required time is reverse recovery time (Trr), is proportional to doped anode total amount reverse recovery time.
In frequency applications, use fast recovery diode can reduce circuit loss.Current most fast recovery diode all forms complex centre by minority carrier life time control technology and realizes quick shutoff, and the mode of general control minority carrier life time has electron irradiation and heavy metal.But use these two kinds of control modes to have respectively following problem:
1. it is bigger than normal that electron irradiation can cause device creepage, owing to being overall irradiation, therefore when quick di/dt switch, can produce electromagnetic interference (EMI); Device is after being used 1-2, and Electron Irradiated Defects can recover gradually, and resume speed is slack-off, and device property is degenerated, and to circuit, brings inefficacy hidden danger;
2. the conventional Au of heavy metal and Pt, Au is because bigger than normal of leakage current is for the following low-voltage device of 600V; Pt well selects in low-voltage device, but because Pt exists P type doping effect, therefore, needs above the device of highly resistant material for 1700V, and Trr parameter is difficult to control, and even can cause device transoid.
3. the fast recovery diode requiring in order to be met resume speed, often by increasing the quantity in complex centre, realize, improve electron irradiation dosage or metal-doped temperature, but now can bring reverse leakage, the rising of forward on-state voltage drop Vf and the reduction of avalanche capability.Because hole participates in electricity, lead modulation simultaneously, reduced the pressure drop of diode, but now pressure drop is negative temperature coefficient, product is difficult in parallel, is unfavorable for the application of high-current circuit.
Summary of the invention
For the deficiencies in the prior art, the object of this invention is to provide a kind of fast recovery diode, another object is to provide a kind of manufacture method of fast recovery diode, the present invention reduces P district and injects N-district (being I district) number of cavities under structure guarantees the situation of PN junction both sides concentration, so just can reach by less complex centre enough speed, guaranteeing on the basis of device operating characteristic, reducing the degree of dependence of device to life-span control technology; Meanwhile, participate in the minimizing that electricity is led modulation number of cavities, the temperature coefficient of pressure drop is gone to zero, be easier to parallel connection.
The object of the invention is to adopt following technical proposals to realize:
The invention provides a kind of fast recovery diode, described fast recovery diode comprises substrate and P district, and described P district forms on substrate, jointly forms PN junction, its improvements are, described P district comprises phosphonium ion compensation implanted layer and the boron ion implanted layer setting gradually from top to bottom; Described phosphonium ion compensation implanted layer can be realized P district surface concentration and reduce, and during described fast recovery diode forward conduction, injected hole quantity reduces;
Described substrate is the N-type silicon substrate of Uniform Doped, and described N-type silicon substrate comprises substrate N-layer and the substrate N+ layer distributing successively from top to bottom; On described substrate N-layer, growth has oxide layer.
Further, by oxide layer described in photoetching and etching, be formed with source region window, carry out knot and form P+ district and P district on the window of described active area, the formation in described P+ district and P district is as follows respectively:
In active area window growth oxide layer, as masking layer, at masking layer B Implanted ion, form boron ion implanted layer, and under nitrogen atmosphere knot, form 1-10um P+ district;
At same active area window or the region that is less than active area window, inject phosphonium ion, form phosphonium ion compensation implanted layer, and under nitrogen atmosphere knot to the P district that forms 5-25um.
The present invention is based on the manufacture method of a kind of fast recovery diode that another object provides, its improvements are, described method comprises the steps:
A, initial oxidation: after the N-type silicon substrate of Uniform Doped is cleaned, by the atmosphere of H2 and O2, in the temperature range of 900 ℃-1100 ℃, the oxidization time of 1-10 hour, in the oxide layer of described silicon substrate superficial growth thickness 8000-20000 dust;
B, be formed with source region: by gluing, exposure, develops, and etching, removes photoresist, and is formed with source region window;
C, formation PN junction: the 300-500 dust oxide layer of growing on the window of active area is as masking layer, and the follow-up dosage that carries out is 1e13cm
-2～1e15cm
-2boron Implantation, form boron ion implanted layer, and under 1200 ℃ of nitrogen atmospheres, under knot, form 1-10um P+ district;
D, form PN junction: at above-mentioned same active area window or to be less than active area window implantation dosage be 1e13cm
-2～1e15cm
-2phosphonium ion, form phosphonium ion compensation implanted layer, and under 1200 ℃ of nitrogen atmospheres knot to junction depth 5-25um, formation P district;
E, carry out electron irradiation, heavy metal high temperature knot or H/He inject and carry out minority carrier life time control; Minority carrier life time is controlled has different positions for different modes; (such as electron irradiation, belong to the control of overall situation life-span, but H/He injection is Local lifetime control, particular location depends on Implantation Energy)
F, in surfaces of active regions after-teeming, enter dense boron, energy 20-50Kev, dosage 1E13～1E15, activates by 900 ℃ of 1h annealing;
G, generation metal electrode: on surface, P district, adopt evaporation or splash-proofing sputtering metal aluminium, by photoetching, etching, removes photoresist and alloy, forms surface metal electrode;
F, surface passivation: by SIN, SIO2, the films such as PI form surface passivation, and by photoetching, etching forms PAD region (PAD region refers to passive area).
Compared with the prior art, the invention has the beneficial effects as follows:
1. fast recovery diode structure provided by the invention, the phosphorus compensation implanted layer by P district reduces fast recovery diode complex centre introduction volume, reduces electric leakage, improves device avalanche capability;
2. fast recovery diode structure provided by the invention, reduces P district hole injection rate, can make diode component pressure drop temperature coefficient approach zero, is easy to parallel connection;
3. the mode that compensates injection by P district being carried out to phosphorus realizes P district surface concentration and reduces, thereby the minimizing of injected hole quantity while realizing forward conduction can reduce complex centre introduction volume.Minority carrier life time is controlled at the diffusion temperature of selecting platinum pt when diffusion can reduce platinum pt, thereby can on the device of voltage levels more, realize platinum doping.
Accompanying drawing explanation
Fig. 1 is substrate growth oxide layer schematic diagram provided by the invention;
Fig. 2 is the structure chart that is formed with source region window through chemical wet etching provided by the invention;
Fig. 3 is the device architecture figure that forms PN junction after injecting knot provided by the invention;
Fig. 4 is the device architecture figure of active area provided by the invention after phosphorus injecting compensating;
Fig. 5 is the longitudinal doping concentration distribution figure of device not compensating through active area phosphorus provided by the invention;
Fig. 6 is the longitudinal doping concentration distribution figure of device through the compensation of active area phosphorus provided by the invention; Wherein: 1 represents substrate N+ layer; 2 represent substrate N-layer; 3 represent oxide layer; 4 represent p+ district; 5 represent p district.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
The present invention is directed to the technical problem that prior art exists, a kind of fast recovery diode and manufacture method thereof are provided, the present invention reduces P district and injects N-district (being I district) number of cavities under structure guarantees the situation of PN junction both sides concentration, so just can reach by less complex centre enough speed, guaranteeing on the basis of device operating characteristic, reducing the degree of dependence of device to life-span control technology.Meanwhile, participate in the minimizing that electricity is led modulation number of cavities, the temperature coefficient of pressure drop is gone to zero, be easier to parallel connection.
Fast recovery diode comprises substrate and P district, and described P district forms on substrate, jointly forms PN junction, and described P district comprises phosphonium ion compensation implanted layer and the boron ion implanted layer setting gradually from top to bottom; Described phosphonium ion compensation implanted layer can be realized P district surface concentration and reduce, and during described fast recovery diode forward conduction, injected hole quantity reduces;
Substrate is the N-type silicon substrate of Uniform Doped, comprises the substrate N-layer 2 and the substrate N+ layer 1 that distribute successively from top to bottom; On described substrate N-layer 2, growth has oxide layer 3, and its schematic diagram as shown in Figure 1.
By photoetching and etching oxidation layer, be formed with source region window, the knot forming process in P district, active area is divided into two steps, and the first step is carried out boron injection, knot 1-10um P+ district; Second step carries out phosphorus compensation and injects, and phosphorus injection condition requires only to reduce near silicon face place's P district concentration after knot but be not enough so that its transoid.By active area, compensate to inject and form the low P district of surface concentration, P district hole injection rate while having reduced forward conduction like this in the situation that guaranteeing PN junction both sides concentration, when adopting minority carrier life time to control, can not need to generate too much complex centre, the optimization that can bring thus series of parameters.
The present invention is a kind of manufacture method of fast recovery diode also, comprises the steps:
A, initial oxidation: after the N-type silicon substrate of Uniform Doped is cleaned, by the atmosphere of H2 and O2, in the temperature range of 900 ℃-1100 ℃, the oxidization time of 1-10 hour, in the oxide layer of described silicon substrate superficial growth thickness 8000-20000 dust;
B, be formed with source region: by gluing, exposure, develops, and etching, removes photoresist, and is formed with source region window; The structure chart that is formed with source region window through chemical wet etching provided by the invention as shown in Figure 2.
C, formation PN junction: the 300-500 dust oxide layer of growing on the window of active area is as masking layer, and the follow-up dosage that carries out is 1e13cm
-2～1e15cm
-2boron Implantation, form boron ion implanted layer, and under 1200 ℃ of nitrogen atmospheres, under knot, form 1-10um P+ district 4; After injecting knot, form the device architecture figure of PN junction as shown in Figure 3.
D, form PN junction: at above-mentioned same active area window or to be less than active area window implantation dosage be 1e13cm
-2～1e15cm
-2phosphonium ion, form phosphonium ion compensation implanted layer, and under 1200 ℃ of nitrogen atmospheres knot to junction depth 5-25um, formation P district 5; The device architecture figure of active area after phosphorus injecting compensating, through the longitudinal doping concentration distribution figure of device of active area phosphorus compensation and through the longitudinal doping concentration distribution figure of device of active area phosphorus compensation respectively as shown in Figure 4, Figure 5 and Figure 6.
E, carry out electron irradiation, heavy metal high temperature knot or H/He inject and carry out minority carrier life time control; Minority carrier life time is controlled has different positions for different modes.Such as electron irradiation, belong to the control of overall situation life-span, but H/He injection is Local lifetime control, particular location depends on Implantation Energy.
F, in surfaces of active regions after-teeming, enter dense boron, energy 20-50Kev, dosage 1E13～1E15, activates by 900 ℃ of annealing in 1 hour;
G, generation metal electrode: on surface, P district, adopt evaporation or splash-proofing sputtering metal aluminium, by photoetching, etching, removes photoresist and alloy, forms surface metal electrode;
F, surface passivation: by SIN, SIO2, the films such as PI form surface passivation, and by photoetching, etching forms PAD region.
Fast recovery diode provided by the invention and manufacture method thereof, the mode that compensates injection by P district being carried out to phosphorus realizes P district surface concentration and reduces, thus the minimizing of injected hole quantity while realizing forward conduction.
Finally should be noted that: above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit, although the present invention is had been described in detail with reference to above-described embodiment, those of ordinary skill in the field are to be understood that: still can modify or be equal to replacement the specific embodiment of the present invention, and do not depart from any modification of spirit and scope of the invention or be equal to replacement, it all should be encompassed in the middle of claim scope of the present invention.
Claims (3)
1. a fast recovery diode, described fast recovery diode comprises substrate and P district, and described P district forms on substrate, jointly forms PN junction, it is characterized in that, and described P district comprises phosphonium ion compensation implanted layer and the boron ion implanted layer setting gradually from top to bottom; Described phosphonium ion compensation implanted layer can be realized P district surface concentration and reduce, and during described fast recovery diode forward conduction, injected hole quantity reduces;
Described substrate is the N-type silicon substrate of Uniform Doped, and described N-type silicon substrate comprises substrate N-layer and the substrate N+ layer distributing successively from top to bottom; On described substrate N-layer, growth has oxide layer.
2. fast recovery diode as claimed in claim 1, is characterized in that, by oxide layer described in photoetching and etching, is formed with source region window, carries out knot and form P+ district and P district on the window of described active area, and the formation in described P+ district and P district is as follows respectively:
In active area window growth oxide layer, as masking layer, at masking layer B Implanted ion, form boron ion implanted layer, and under nitrogen atmosphere knot, form 1-10um P+ district;
At same active area window or the region that is less than active area window, inject phosphonium ion, form phosphonium ion compensation implanted layer, and under nitrogen atmosphere knot to the P district that forms 5-25um.
3. a manufacture method for fast recovery diode, is characterized in that, described method comprises the steps:
A, initial oxidation: after the N-type silicon substrate of Uniform Doped is cleaned, by the atmosphere of H2 and O2, in the temperature range of 900 ℃-1100 ℃, the oxidization time of 1-10 hour, in the oxide layer of described silicon substrate superficial growth thickness 8000-20000 dust;
B, be formed with source region: by gluing, exposure, develops, and etching, removes photoresist, and is formed with source region window;
C, formation PN junction: the 300-500 dust oxide layer of growing on the window of active area is as masking layer, and the follow-up dosage that carries out is 1e13cm
-2～1e15cm
-2boron Implantation, form boron ion implanted layer, and under 1200 ℃ of nitrogen atmospheres, under knot, form 1-10um P+ district;
D, form PN junction: at above-mentioned same active area window or to be less than active area window implantation dosage be 1e13cm
-2～1e15cm
-2phosphonium ion, form phosphonium ion compensation implanted layer, and under 1200 ℃ of nitrogen atmospheres knot to junction depth 5-25um, formation P district;
E, carry out electron irradiation, heavy metal high temperature knot or H/He inject and carry out minority carrier life time control; Minority carrier life time is controlled has different positions for different modes;
F, in surfaces of active regions after-teeming, enter dense boron, energy 20-50Kev, dosage 1E13～1E15, activates by 900 ℃ of 1h annealing;
G, generation metal electrode: on surface, P district, adopt evaporation or splash-proofing sputtering metal aluminium, by photoetching, etching, removes photoresist and alloy, forms surface metal electrode;
H, surface passivation: by SIN, SIO2, the films such as PI form surface passivation, and by photoetching, etching forms PAD region.
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| CN104134703A (en) * | 2014-08-08 | 2014-11-05 | 上海安微电子有限公司 | Low-electric-leakage and low-forward-voltage-drop Schottky diode structure and manufacturing method of low-electric-leakage and low-forward-voltage-drop Schottky diode structure |
| CN104332503A (en) * | 2014-10-16 | 2015-02-04 | 桑德斯微电子器件（南京）有限公司 | High voltage fast recovery diode chip and production process thereof |
| CN104952936A (en) * | 2014-03-25 | 2015-09-30 | 国家电网公司 | Fast recovery diode and manufacturing method thereof |
| CN105702746A (en) * | 2014-11-26 | 2016-06-22 | 国家电网公司 | Fast recovery diode and manufacturing method thereof |
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| CN110942989A (en) * | 2019-12-13 | 2020-03-31 | 扬州国宇电子有限公司 | Platinum doping method for silicon-based fast recovery diode chip |
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