CN205177857U - Fast recovery diode - Google Patents
Fast recovery diode Download PDFInfo
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- CN205177857U CN205177857U CN201520803453.8U CN201520803453U CN205177857U CN 205177857 U CN205177857 U CN 205177857U CN 201520803453 U CN201520803453 U CN 201520803453U CN 205177857 U CN205177857 U CN 205177857U
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- fast recovery
- recovery diode
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- oxide layer
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Abstract
The utility model provides a fast recovery diode, the diode includes the substrate N - layer (2) of containing active area (5) and having spaced terminal protection ring (7), the front on substrate N - layer (2) and the back have oxide layer (3) and buffer layer (4) respectively, again in BPSG layer (8) have been laid in oxide layer (3), active area (5) are equipped with metal electrode (9), active area (5) periphery is equipped with resistance district (6), the utility model discloses a fast recovery diode has improved the inhomogeneities of backward recovery in -process electric current, avoids electric current collection limit phenomenon, alleviates local dynamic snowslide reinforcing, has improved its anti dynamic snowslide ability.
Description
Technical field
The utility model relates to a kind of power electronic device, is specifically related to a kind of fast recovery diode.
Background technology
It is good that fast recovery diode (FRD) has switching characteristic, the advantages such as reverse recovery time is short, forward current is large, volume is little, simple installation.Be mainly used in the Power Electronic Circuit such as Switching Power Supply, PWM pulse width modulator, frequency converter and inverter, use as high-frequency rectification diode, fly-wheel diode or damper diode.Its internal structure is different from common PN junction diode, and it belongs to PIN junction type diode, namely in the middle of P-type silicon material and N-type silicon materials, adds base I, forms PIN silicon chip.
When fast recovery diode is applied to inverter, the dynamic avalanche occurred in reversely restoring process punctures and usually causes it to damage, even when reverse voltage is lower than Static Breakdown Voltage.Along with the increase of inverter frequency, the di/dt that fast recovery diode bears is also more and more higher, the dynamic avalanche in reversely restoring process puncture be easier to occur.
Electric current collection limit phenomenon is there is in the fast recovery diode of common plane type in reversely restoring process, namely the plasma below terminal is injected into during forward conduction, in reversely restoring process, great majority extract out from the side (knot knee) of active area, local dynamic station snowslide is strengthened, and then causes fast recovery diode to be easy to occurrence dynamics avalanche breakdown at four edges of active area.
Summary of the invention
The purpose of this utility model is to provide a kind of fast recovery diode, overcome the deficiencies in the prior art, improve the inhomogeneities of electric current in reversely restoring process, avoid electric current collection limit phenomenon, alleviate local dynamic station snowslide to strengthen, improve the anti-dynamic avalanche ability of fast recovery diode.
For solving the problems of the technologies described above, the utility model by the following technical solutions:
A kind of fast recovery diode; described diode comprises the substrate N-layer (2) containing active area (5) and the spaced terminal protection ring (7) of tool; the front and back of described substrate N-layer (2) has oxide layer (3) and resilient coating (4) respectively; bpsg layer (8) is laid with again in described oxide layer (3); described active area (5) is provided with metal electrode (9), and described active area (5) periphery is provided with resistance area (6).
First preferred version of described fast recovery diode, the thickness of described oxide layer (3) is
Second preferred version of described fast recovery diode, the thickness at described back side resilient coating (4) is 1-120 μm.
3rd preferred version of described fast recovery diode, the thickness of described bpsg layer (8) is
4th preferred version of described fast recovery diode, the ion doping concentration of described active area (5) and terminal protection ring (7) is 1e15-1e18.
5th preferred version of described fast recovery diode, the ion doping concentration of described resistance area (6) is 1e14-1e17.
6th preferred version of described fast recovery diode, the ion doping concentration of described resistance area (6) is lower than active area (5).
A manufacture method for described fast recovery diode, described method comprises:
1) initial oxidation: high-temperature oxydation N-type silicon chip grows oxide layer at front and back;
2) back side resilient coating: remove backside oxide layer, forms back side resilient coating;
3) ion implantation window: by gluing, exposure, development, etch and remove photoresist and be formed with the ion implantation window of source region, resistance area and terminal pressure ring;
4) PN junction is formed: through boron ion implantation and annealing, forms the active area of doping, resistance area and terminal protection ring;
5) BPSG deposit: form oxide layer by CVD method, and reflux at 900-1100 DEG C, obtain BPSG deposit;
6) fairlead: by photoetching, etch and remove photoresist formation fairlead;
7) metal electrode: evaporation or sputtering Al, through photoetching, etches, to remove photoresist and alloy technique forms surface metal deposit;
8) surface passivation: form surface passivation layer.
First optimal technical scheme of the manufacture method of described fast recovery diode, step 2) described back side resilient coating adopts P ion implantation and annealing or POCl
3the method of diffusion is formed.
Second optimal technical scheme of the manufacture method of described fast recovery diode, step 3) described in the resistance area of resistance area ion implantation window expose portion, and to be symmetric centered by the ion implantation window of active area.
3rd optimal technical scheme of the manufacture method of described fast recovery diode, the shape of described resistance area ion implantation window is concentric rectangles ring, donut, square hole, circular hole or diamond hole.
4th optimal technical scheme of the manufacture method of described fast recovery diode, step 4) described in the implantation dosage of boron ion be 1e13-1e15, described annealing is carried out in nitrogen atmosphere at 1050-1250 DEG C.
When the active area of fast recovery diode and terminal ion implantation window are formed, by controlling ion implantation mask figure, using portion of oxide layer as sheltering, realize the reduction of active area surrounding ion implantation transparency, form low-doped resistance area, when namely forming injection window, the oxide layer of active area surrounded surface is removed completely unlike active area, but the removal be symmetric centered by active area, the injection graph window of resistance area is concentric rectangles ring, donut, square hole, circular hole or diamond hole etc., or the oxide layer figure removed is square hole, circular hole or diamond hole etc.Design of the present utility model, is beneficial to the plasma quantity that reduction is injected into below terminal when forward conduction, thus reduces the plasma quantity of extracting out below terminal when Reverse recovery; Meanwhile, low-doped resistance area has the effect increasing resistance area resistance, effectively reduces the quantity of extracting out from the side of active area in hole, increases the hole quantity that (parallel plane knot) is extracted out below active area; Thus improve the inhomogeneities of electric current in reversely restoring process, avoid electric current collection limit phenomenon, alleviate local dynamic station snowslide and strengthen, improve the anti-dynamic avalanche ability of fast recovery diode.
The utility model diode is low pressure, mesohigh, high pressure level fast recovery diode, and manufacture method is applicable to the fast recovery diode of 600V ~ 6500V electric pressure.
With immediate prior art ratio, the utility model has following beneficial effect:
1) the low-doped resistance area of active area surrounding in the utility model fast recovery diode, is beneficial to the plasma quantity that reduction is injected into below terminal when forward conduction, thus reduces the plasma quantity of extracting out below terminal when Reverse recovery;
2) simultaneously, low-doped resistance area has the effect increasing resistance area resistance, effectively reduces the quantity of extracting out from the side of active area in hole, increases the hole quantity that (parallel plane knot) is extracted out below active area;
3) weaken electric current collection limit phenomenon, alleviate local dynamic station snowslide and strengthen, improve the anti-dynamic avalanche ability of fast recovery diode.
Accompanying drawing explanation
Fig. 1: ion implantation mask domain schematic diagram, wherein: a resistance area mask is concentric rectangles ring, b resistance area mask is circular hole;
Fig. 2: substrate growth oxide layer;
Fig. 3: the back side forms resilient coating;
Fig. 4: form ion implantation window;
Fig. 5: the structure after ion implantation and knot;
Fig. 6: the structure after fairlead is formed;
Fig. 7: the structure after metal anode is formed;
Wherein: 1 oxide layer; 2 substrate N-layers; 3 oxide layers; 4 resilient coatings; 5 active areas; 6 resistance areas; 7 terminal protection rings; 8BPSG layer; 9 metal electrodes.
Embodiment
For better the utility model being described, be convenient to understand the technical solution of the utility model, typical but non-limiting embodiment of the present utility model is as follows:
Embodiment 1
Make 1700V electric pressure fast recovery diode:
1) initial oxidation: the method using high-temperature oxydation, in N-type silicon chip surface and back side growth oxide layer, thickness
see Fig. 2;
2) back side resilient coating: remove backside oxide layer 1, adopts P ion implantation to add annealing or POCl
3the method of diffusion forms back side resilient coating 4, sees Fig. 3;
3) ion implantation window: by gluing, exposure, development, etching, degumming process is formed with the ion implantation window of source region, low-doped resistance area and terminal pressure ring, and see Fig. 4, ion implantation mask domain is as shown in a in Fig. 1;
4) PN junction is formed: carry out a boron ion implantation, dosage is 1e13-1e15, anneals afterwards under 1050-1250 DEG C of high temperature and nitrogen atmosphere, is formed with source region doping 5, resistance area doping 6, terminal protection ring doping 7, sees Fig. 5;
5) BPSG deposit: form oxide layer by CVD technique, and reflux under 900-1100 DEG C of high temperature;
6) fairlead: by photoetching, etching, degumming process forms fairlead, sees Fig. 6;
7) metal electrode: evaporation or sputtering Al, by photoetching, etching, removes photoresist, and alloy technique forms surface metal deposit, sees Fig. 7;
8) surface passivation: form surface passivation layer.
Above embodiment is only in order to illustrate that the technical solution of the utility model is not intended to limit; those of ordinary skill in the field are to be understood that; can modify to embodiment of the present utility model with reference to above-described embodiment or equivalent to replace, these do not depart from any amendment of the utility model spirit and scope or equivalently to replace within the claims that all awaits the reply in application.
Claims (5)
1. a fast recovery diode; described diode comprises the substrate N-layer (2) containing active area (5) and the spaced terminal protection ring (7) of tool; the front and back of described substrate N-layer (2) has oxide layer (3) and resilient coating (4) respectively; bpsg layer (8) is laid with again in described oxide layer (3); described active area (5) is provided with metal electrode (9); it is characterized in that, described active area (5) periphery is provided with resistance area (6).
2. fast recovery diode according to claim 1, is characterized in that, the thickness of described oxide layer (3) is
3. fast recovery diode according to claim 1, is characterized in that, the thickness at described back side resilient coating (4) is 1-120 μm.
4. fast recovery diode according to claim 1, is characterized in that, the thickness of described bpsg layer (8) is
5. fast recovery diode according to claim 1, is characterized in that, the ion doping concentration of described resistance area (6) is lower than active area (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520803453.8U CN205177857U (en) | 2015-10-16 | 2015-10-16 | Fast recovery diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520803453.8U CN205177857U (en) | 2015-10-16 | 2015-10-16 | Fast recovery diode |
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| Publication Number | Publication Date |
|---|---|
| CN205177857U true CN205177857U (en) | 2016-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520803453.8U Active CN205177857U (en) | 2015-10-16 | 2015-10-16 | Fast recovery diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601826A (en) * | 2015-10-16 | 2017-04-26 | 国网智能电网研究院 | Fast recovery diode and manufacturing method thereof |
| WO2020103770A1 (en) * | 2018-11-21 | 2020-05-28 | 深圳比亚迪微电子有限公司 | Fast recovery diode and manufacturing method thereof |
-
2015
- 2015-10-16 CN CN201520803453.8U patent/CN205177857U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601826A (en) * | 2015-10-16 | 2017-04-26 | 国网智能电网研究院 | Fast recovery diode and manufacturing method thereof |
| CN106601826B (en) * | 2015-10-16 | 2024-03-15 | 国网智能电网研究院 | Fast recovery diode and manufacturing method thereof |
| WO2020103770A1 (en) * | 2018-11-21 | 2020-05-28 | 深圳比亚迪微电子有限公司 | Fast recovery diode and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 102209 18 Riverside Avenue, Changping District science and Technology City, Beijing Co-patentee after: STATE GRID CORPORATION OF CHINA Patentee after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Address before: 102209 Beijing Changping District future science and Technology North District Smart Grid Research Institute Co-patentee before: State Grid Corporation of China Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Address after: 102209 Beijing Changping District future science and Technology North District Smart Grid Research Institute Co-patentee after: STATE GRID CORPORATION OF CHINA Patentee after: GLOBAL ENERGY INTERCONNECTION Research Institute Address before: 102211 Beijing Changping District small Tang Shan town big east stream Village Road 270 (future science and technology city) Co-patentee before: State Grid Corporation of China Patentee before: STATE GRID SMART GRID Research Institute |
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| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191017 Address after: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Patentee after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. Address before: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Co-patentee before: STATE GRID CORPORATION OF CHINA Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200108 Address after: 211106 19 integrity Avenue, Jiangning economic and Technological Development Zone, Nanjing, Jiangsu Patentee after: Nanruilianyan Semiconductor Co.,Ltd. Address before: 102209 Beijing City, the future of science and Technology City Binhe Road, No. 18, No. Patentee before: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Fast recovery diode and manufacturing method thereof Effective date of registration: 20200528 Granted publication date: 20160420 Pledgee: NARI TECHNOLOGY Co.,Ltd. Pledgor: Nanruilianyan Semiconductor Co.,Ltd. Registration number: Y2020980002584 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20220329 Granted publication date: 20160420 Pledgee: NARI TECHNOLOGY Co.,Ltd. Pledgor: Nanruilianyan Semiconductor Co.,Ltd. Registration number: Y2020980002584 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right |