CN113571415B - IGBT device and manufacturing method thereof - Google Patents
IGBT device and manufacturing method thereof Download PDFInfo
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- CN113571415B CN113571415B CN202111104116.6A CN202111104116A CN113571415B CN 113571415 B CN113571415 B CN 113571415B CN 202111104116 A CN202111104116 A CN 202111104116A CN 113571415 B CN113571415 B CN 113571415B
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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Abstract
The invention provides an IGBT device and a manufacturing method thereof, wherein the IGBT device comprises: the IGBT device comprises a substrate, a first electrode, a second electrode and a third electrode, wherein the substrate comprises a first main surface and a second main surface which are opposite, the first main surface is provided with a front structure of the IGBT device, and the IGBT device comprises an active region, a transition region and a terminal region; an oxygen ion defect layer formed in the second main surfaces of the transition region and the termination region; a collector region formed on the second main surface of the substrate; and the hydrogen ion doping area is formed in the second main surface of the substrate, and the oxygen ion defect layer is positioned in the hydrogen ion doping area, wherein the oxygen ions of the oxygen ion defect layer are used as an adsorbent of the hydrogen ions so as to increase the doping concentration of the hydrogen ions in the hydrogen ion doping area. According to the invention, when the IGBT device is switched on, the emission efficiency of the transition region and the terminal region is reduced, and meanwhile, when the IGBT device is switched off, the electron and hole recombination speed of the transition region and the terminal region is improved, so that the problem of current concentration in the transition region is effectively relieved, and the reliability of an IGBT chip is improved.
Description
Technical Field
The invention belongs to the field of semiconductor integrated circuit design and manufacture, and particularly relates to an IGBT device and a manufacturing method thereof.
Background
An IGBT (insulated gate bipolar transistor) is a composite full-control voltage-driven power semiconductor device consisting of a BJT (bipolar junction transistor) and an MOSFET (insulated gate field effect transistor), so that the IGBT has the advantages of high MOSFET input impedance, small driving circuit power, simple driving, high switching speed and small switching loss, and also has the advantages of high BJT current density, strong current processing capability and low conduction saturation voltage drop. Since the invention was invented in the first 80 s, the IGBT is widely researched at home and abroad, has wide application prospect, is widely applied to a plurality of fields such as new energy automobiles, industrial frequency conversion, photovoltaics, smart power grids, locomotives and the like, and undoubtedly puts higher requirements on the performance and reliability of the IGBT with the continuous development of the technology.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide an IGBT device and a method for manufacturing the same, which are used to solve the problem of excessive current in the transition region when the IGBT is turned off in the prior art.
In order to achieve the above and other related objects, the present invention provides a method for manufacturing an IGBT device, the method comprising: providing a substrate, wherein the substrate comprises a first main surface and a second main surface which are opposite, and completing a front process of an IGBT device on the first main surface to form an active region, a transition region and a terminal region of the IGBT device; performing oxygen ion implantation on the second main surfaces of the transition region and the terminal region through a graphic mask to form an oxygen ion defect layer in the second main surfaces of the transition region and the terminal region; conducting conductive doping ion implantation on the second main surface of the substrate to form a collector region on the second main surface of the substrate; and hydrogen ion implantation is carried out on the second main surface of the substrate, so that a hydrogen ion doped region is formed in the second main surface, the oxygen ion defect layer is positioned in the hydrogen ion doped region, and oxygen ions of the oxygen ion defect layer are used as an adsorbent of hydrogen ions so as to increase the doping concentration of the hydrogen ions in the hydrogen ion doped region.
Optionally, the front process of the IGBT device is completed, and then the step of thinning the second main surface of the substrate is further included.
Optionally, the active region of the IGBT device includes a well region disposed on the first main surface of the substrate, a trench gate structure, an emitter region, and a carrier storage doping region, the trench gate structure penetrates through the well region into the substrate, the emitter region is disposed in the well region and is located on a side of the trench gate structure, the carrier storage doping region is disposed below the well region, and the emitter metal layer is connected to the emitter region and the well region.
Optionally, the transition region includes a well region disposed on the first main surface of the substrate and a connection hole connected to the well region, the termination region of the IGBT device includes a field oxide layer on the first main surface of the substrate and a stop ring at an edge of the termination region, and the transition region and the termination region further include a lateral variable doping layer crossing the transition region and the termination region.
Optionally, the oxygen ion implantation dose is between 1e10cm-2~1e15cm-2The oxygen ion implantation energy is between 200KeV and 15 MeV.
OptionallyThe conductive ion implantation dosage of the conductive doping ion implantation is 1e12-1e14cm-2The conductive ion implantation energy is between 20KeV and 60KeV, and then the conductive doping ions are activated by adopting a laser annealing process, the laser energy is between 1J and 2J, or the conductive doping ions are activated by adopting a furnace tube annealing process, and the annealing temperature is between 400 and 500 ℃.
Optionally, the hydrogen ion implantation includes performing hydrogen ion implantation on the second main surface of the substrate multiple times and annealing, so that the hydrogen ion doped region has a plurality of hydrogen ion doped layers with different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the plurality of hydrogen ion doped layers gradually decrease from the second main surface to the first main surface.
Optionally, the number of times of hydrogen ion implantation is between 2 and 4 times.
Optionally, the hydrogen ion implantation dosage is 5e 11-5 e16cm-2The hydrogen ion implantation energy is between 200KeV and 1.5MeV, the annealing temperature is between 300 ℃ and 500 ℃, and the annealing time is between 0.5h and 5 h.
The present invention also provides an IGBT device, including: the IGBT device comprises a substrate, a first electrode and a second electrode, wherein the substrate comprises a first main surface and a second main surface which are opposite, the first main surface is provided with a front surface structure of the IGBT device, and the IGBT device comprises an active region, a transition region and a terminal region; an oxygen ion defect layer formed in the second main surfaces of the transition region and the termination region; a collector region formed on the second main surface of the substrate; and the hydrogen ion doping area is formed in the second main surface of the substrate, and the oxygen ion defect layer is positioned in the hydrogen ion doping area, wherein oxygen ions of the oxygen ion defect layer are used as an adsorber of hydrogen ions so as to increase the doping concentration of the hydrogen ions in the hydrogen ion doping area.
Optionally, the active region of the IGBT device includes a well region disposed on the first main surface of the substrate, a trench gate structure, an emitter region, and a carrier storage doping region, the trench gate structure penetrates through the well region into the substrate, the emitter region is disposed in the well region and is located on a side of the trench gate structure, and the carrier storage doping region is disposed below the well region.
Optionally, the transition region includes a well region disposed on the first main surface of the substrate and a connection hole connected to the well region, the termination region of the IGBT device includes a field oxide layer on the first main surface of the substrate and a stop ring at an edge of the termination region, and the transition region and the termination region further include a lateral variable doping layer crossing the transition region and the termination region.
Optionally, the oxygen ion defect layer comprises an oxygen ion implantation dose of 1e10cm-2~1e15cm-2The oxygen ion implantation energy is between 200KeV and 15 MeV.
Optionally, the collector region comprises a conductive dopant ion implant dose of 1e12-1e14cm-2The conductive doping ion implantation energy is between 20KeV and 60 KeV.
Alternatively, the hydrogen ion doped region may have a plurality of hydrogen ion doped layers having different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the plurality of hydrogen ion doped layers may gradually decrease from the second main surface toward the first main surface.
Optionally, the number of the hydrogen ion doped layers included in the hydrogen ion doped region is between 2 and 4.
Optionally, the hydrogen ion doped region comprises a hydrogen ion implantation dose of 5e 11-5 e16cm-2The hydrogen ion implantation energy is between 200KeV and 1.5 MeV.
As described above, the IGBT device and the method for manufacturing the same according to the present invention have the following advantageous effects:
according to the invention, the oxygen ion defect layers are arranged on the back sides of the transition region and the terminal region of the IGBT device, so that the hole life of the transition region and the terminal region is reduced, and further, when the IGBT device is conducted, the emission efficiency of the P-type collector on the back sides of the transition region and the terminal region of the IGBT is reduced.
According to the invention, one or more hydrogen ions are adsorbed on the oxygen impurities and the self-gap to form N-type doping, under a certain hydrogen injection condition, the hydrogen ion adsorption carriers can be increased by increasing the oxygen ions, the N-type doping concentration is increased, namely, the total concentration of the buffer layer can be effectively increased, and further, when the IGBT device is conducted, the emission efficiency of the P-type collector at the back of the transition region and the terminal region of the IGBT device is further reduced.
The oxygen ion defect layer can reduce the emission efficiency of the P-type collectors on the back sides of the transition region and the terminal region, can reduce the injected hole quantity of the P-type collectors on the back sides of the transition region and the terminal region of the IGBT device when the IGBT device is switched on, can accelerate the electron and hole recombination speed of the transition region and the terminal region when the IGBT device is switched off, reduces the hole quantity extracted from the opening of the transition region, and relieves the current concentration problem.
According to the invention, the oxygen ion defect layer is added on the back surfaces of the transition region and the terminal region of the IGBT device, so that the emission efficiency of the transition region and the terminal region can be reduced when the IGBT device is switched on, and the electron and hole recombination speed of the transition region and the terminal region can be increased when the IGBT device is switched off, thereby effectively relieving the current concentration problem of the transition region and improving the reliability of an IGBT chip.
Drawings
Fig. 1 to 5 show structural schematic diagrams of steps of a method for manufacturing an IGBT device according to an embodiment of the present invention, where fig. 5 shows a structural schematic diagram of an IGBT device according to an embodiment of the present invention.
Element number description: 101 substrate, 102 laterally-varying doping layer, 103 field oxide layer, 104 stop ring, 105 gate dielectric layer, 106 polysilicon layer, 107 carrier storage doping region, 108 well region, 109 emitter region, 110 insulating layer, 111 front metal, 112 collector region, 113 oxygen ion defect layer, 114 hydrogen ion doping region, 115 back metal, 141 first doping peak, 142 second doping peak, 143 third doping peak, 144 fourth doping peak.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structures are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example 1
The IGBT device may be divided into three regions, an active region, a transition region, and a termination region. When the IGBT device is turned on, the back P-type collector starts to inject holes into a drift region of the IGBT device, and during the turn-off period of the IGBT device, all electrons and holes injected into the drift region during the turn-on period need to be extracted, the electrons flow out from the back surface of the IGBT device, and the holes flow out from the front surface of the IGBT device. The holes of the active region can directly flow out from the opening of the front of the active region, but the front of the terminal region is not provided with a current channel, and the holes of the terminal region mainly flow out from the opening of the transition region, so that the problem of current concentration in the transition region can be caused, the transition concentration of local current causes local temperature rise, and the reliability of the IGBT device is reduced.
In order to solve the above problem, as shown in fig. 1 to 5, the present embodiment provides a method for manufacturing an IGBT device, where the method includes the following steps:
as shown in fig. 1, step 1) is firstly performed to provide a substrate 101, where the substrate 101 includes a first main surface and a second main surface opposite to each other, and a front process of an IGBT device is completed on the first main surface to form an active region, a transition region, and a termination region of the IGBT device.
The substrate 101 may be a monocrystalline silicon substrate. The substrate 101 may also be made of other materials in some embodiments, such as but not limited to silicon germanium or germanium. In other embodiments, the substrate 101 may also be a substrate including other element semiconductors or compound semiconductors, such as gallium arsenide, indium phosphide, or silicon carbide.
The front process of completing the IGBT device on the first main surface includes preparing a front structure of an active region, a transition region, and a terminal region of the IGBT device, specifically, the active region of the IGBT device includes a well region 108, a trench gate structure, an emitter region 109, and a carrier storage doping region 107, which are disposed on the first main surface of the substrate 101, the trench gate structure penetrates through the well region 108 to the substrate 101, the trench gate structure includes a trench extending to the lower side of the well region 108, a gate dielectric layer 105 located on the side wall of the trench, and a polysilicon layer 106 filled in the trench, the emitter region 109 is disposed in the well region 108 and located on the side of the trench gate structure, and the carrier storage doping region 107 is disposed below the well region 108. The transition region includes a well region 108 disposed on the first main surface of the substrate 101 and a connection hole connected to the well region 108, the termination region of the IGBT device includes a field oxide layer 103 located on the first main surface of the substrate 101 and a stop ring 104 located at the edge of the termination region, and the transition region and the termination region further include a lateral variable doping layer 102 crossing the transition region and the termination region. An insulating layer 110 is further formed on the first main surface of the IGBT device, a front metal 111 is formed on the insulating layer 110, the front metal 111 includes an emitter metal layer and a gate metal layer, the emitter metal is connected to the emitter region 109 and the well region 108 of the active region through a connection hole, and is connected to the well region 108 of the transition region through a connection hole, and the gate metal layer is connected to the polysilicon layer 106 in the trench gate structure.
In this embodiment, the IGBT device is implemented based on an N-type substrate, the substrate 101 is doped N-type, the well region 108 is doped P-type, the emitter region 109 is doped N-type, the carrier storing and doping region 107 is doped N-type, the stop ring 104 is doped N-type, and the lateral graded doping layer 102 is doped P-type. The ion doping concentration of each doping area can be set according to parameters of the on-resistance, the reverse voltage resistance and the like of the device.
In an embodiment, after the front surface process of the IGBT device is completed, a step of thinning the second main surface of the substrate 101 is further included, the thinning process may be, for example, a grinding process, and the thinning thickness of the substrate 101 may be set according to the performance of the device, such as the withstand voltage.
As shown in fig. 2, step 2) is then performed to perform oxygen ion implantation through a pattern mask onto the second main surfaces of the transition region and the termination region to form an oxygen ion defect layer 113 within the second main surfaces of the transition region and the termination region.
As an example, a pattern mask is first formed on the second main surface of the substrate 101, the pattern mask exposes the transition region and the termination region, and then oxygen ion implantation is performed on the second main surface of the transition region and the termination region, wherein the oxygen ion implantation dosage is 1e10cm-2~1e15cm-2The oxygen ion implantation energy is between 200KeV and 15 MeV. In one embodiment, the oxygen ion implantation has an oxygen ion implantation dose of 1e13cm-2The oxygen ion implantation energy was 1 MeV. In yet another specific embodiment, the oxygen ion implantation has an oxygen ion implantation dose of 1e14cm-2The oxygen ion implantation energy was 3 MeV. The oxygen ion implantation can form an oxygen ion defect layer 113 in the substrate 101, and the oxygen ion defect layer 113 is arranged on the back of the transition region and the terminal region of the IGBT device, so that the hole life of the transition region and the terminal region is reduced, and the emission efficiency of a P-type collector on the back of the transition region and the terminal region of the IGBT device is reduced when the IGBT device is switched on. As shown in fig. 3, step 3) is then performed to perform a conductive dopant ion implantation into the second main surface of the substrate 101 to form a collector region 112 on the second main surface of the substrate 101.
As an example, the conductive doping ion can be boron or a boron compound, and the conductive doping ion is implanted at a conductive ion implantation dosage of 1e12-1e14cm-2The conductive ion implantation energy is between 20KeV and 60KeV, and then the conductive doping ions are activated by adopting a laser annealing process, the laser energy is between 1J and 2J, or the conductive doping ions are activated by adopting a furnace tube annealing process, and the annealing temperature is between 400 and 500 ℃. Meanwhile, the laser annealing process or the furnace tube annealing process can eliminate the oxygen ion defect which is unstable at high temperature and leave the oxygen ion defect which is stable at high temperature. The invention can select laser annealing equipment or furnace tube annealing equipment according to the requirements of the use frequency of the device. For example, for annealing of the high-frequency IGBT device, furnace tube equipment is preferably selected for annealing, so that annealing batch and efficiency can be effectively improved, productivity is improved, and cost of annealing equipment is reduced.
As shown in fig. 4, step 4) is performed next, hydrogen ion implantation is performed on the second main surface of the substrate 101, so as to form a hydrogen ion doped region 114 in the second main surface, and the oxygen ion defect layer 113 is located in the hydrogen ion doped region 114; the hole lifetime of the transition region and the termination region is reduced by the oxygen ion defect layer 113, and at the same time, the oxygen ions of the oxygen ion defect layer 113 serve as an adsorbent for hydrogen ions to increase the doping concentration of hydrogen ions in the hydrogen ion doped region 114.
In this embodiment, the hydrogen ion implantation includes performing hydrogen ion implantation on the second main surface of the substrate 101 a plurality of times and annealing, so that the hydrogen ion doped region 114 has a plurality of hydrogen ion doped layers with different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the plurality of hydrogen ion doped layers are gradually reduced from the second main surface to the first main surface. For example, the hydrogen ion implantation dosage is 5e 11-5 e16cm-2The hydrogen ion implantation energy is between 200KeV and 1.5MeV, the annealing temperature is between 300 ℃ and 500 ℃, and the annealing time is between 0.5h and 5 h. Specifically, the number of times of the hydrogen ion implantation is between 2 and 4, and by adjusting the dose and energy of each hydrogen ion implantation, a hydrogen ion doped layer having a plurality of different doping peaks can be formed in the substrate 101 after annealing, for example, in the present embodiment, the hydrogen ion doped region 114 has four different doping peaks, for example, including a first doping peak 141, a second doping peak 142, a third doping peak 143, and a fourth doping peak 144, as shown in fig. 4.
In this embodiment, under a certain hydrogen injection condition, oxygen ions are added, and a hydrogen ion adsorber can be added, so as to increase the N-type doping concentration, that is, the total concentration of the buffer layer can be effectively increased, and further, when the IGBT device is turned on, the emission efficiency of the P-type collector at the back of the transition region and the terminal region of the IGBT device is further reduced.
Based on the above, by the oxygen ion defect layer 113, on one hand, the hole lifetime of the transition region and the terminal region can be reduced, so that when the IGBT device is turned on, the emission efficiency of the P-type collector on the back of the IGBT transition region and the terminal region is reduced, and on the other hand, the oxygen ion of the oxygen ion defect layer 113, as an adsorber of hydrogen ions, can increase the doping concentration of hydrogen ions in the hydrogen ion doping region 114, and when the IGBT device is turned on, the emission efficiency of the P-type collector on the back of the IGBT device transition region and the terminal region is further reduced. Because the oxygen ion defect layer 113 can reduce the emission efficiency of the back P-type collector of the transition region and the terminal region of the IGBT device, when the IGBT device is turned on, the amount of holes injected from the back P-type collector of the transition region and the terminal region of the IGBT device is reduced, and meanwhile, the low lifetime region (oxygen ion defect layer 113) exists on the back transition region and the back of the terminal region of the IGBT device, which accelerates the recombination speed of electrons and holes in the transition region and the terminal region when the IGBT device is turned off, reduces the amount of holes extracted from the opening of the transition region, and alleviates the problem of current concentration.
As shown in fig. 5, step 5) is finally performed to form a back metal 115 on the second main surface of the substrate 101, so as to complete the fabrication of the IGBT device. For example, the back metal 115 may be an Al/Ti/Ni/Ag metal stack.
Example 2
As shown in fig. 5, the present embodiment provides an IGBT device including: the IGBT device comprises a substrate 101, wherein the substrate 101 comprises a first main surface and a second main surface which are opposite, the first main surface is provided with a front surface structure of the IGBT device, and the IGBT device comprises an active region, a transition region and a terminal region; an oxygen ion defect layer 113 formed in the second main surface of the transition region and the termination region; a collector region 112 formed on the second main surface of the substrate 101; a hydrogen ion doped region 114 formed in the second main surface of the substrate 101, wherein the oxygen ion defect layer 113 is located in the hydrogen ion doped region 114; the hole lifetime of the transition region and the termination region is reduced by the oxygen ion defect layer 113, and at the same time, the oxygen ions of the oxygen ion defect layer 113 serve as an adsorbent for hydrogen ions to increase the doping concentration of hydrogen ions in the hydrogen ion doped region 114.
For example, the substrate 101 may be a single crystalline silicon substrate. The substrate may also be made of other materials in some embodiments, such as but not limited to silicon germanium or germanium. In other embodiments, the substrate 101 may also be a substrate including other element semiconductors or compound semiconductors, such as gallium arsenide, indium phosphide, or silicon carbide.
As shown in fig. 5, the active region of the IGBT device includes a well region 108 disposed on the first main surface of the substrate 101, a trench gate structure, an emitter region 109, and a carrier storage doping region 107, the trench gate structure penetrates the well region 108 into the substrate 101, the trench gate structure includes a trench extending to the lower side of the well region 108, a gate dielectric layer 105 located on the side wall of the trench, and a polysilicon layer 106 filled in the trench, the emitter region 109 is disposed in the well region 108 and located on the side surface of the trench gate structure, and the carrier storage doping region 107 is disposed below the well region 108. The transition region includes a well region 108 disposed on the first main surface of the substrate 101 and a connection hole connected to the well region 108, the termination region of the IGBT device includes a field oxide layer 103 located on the first main surface of the substrate 101 and a stop ring 104 located at the edge of the termination region, and the transition region and the termination region further include a lateral variable doping layer 102 crossing the transition region and the termination region. An insulating layer 110 is further formed on the first main surface of the IGBT device, a front metal 111 is formed on the insulating layer 110, the front metal 111 includes an emitter metal layer and a gate metal layer, the emitter metal is connected to the emitter region 109 and the well region 108 of the active region through a connection hole, and is connected to the well region 108 of the transition region through a connection hole, and the gate metal layer is connected to the polysilicon layer 106 in the trench gate structure.
In this embodiment, the IGBT device is implemented based on an N-type substrate 101, the substrate 101 is doped N-type, the well region 108 is doped P-type, the emitter region 109 is doped N-type, the carrier storing and doping region 107 is doped N-type, the stop ring 104 is doped N-type, and the lateral varying doping layer 102 is doped P-type. The ion doping concentration of each doping area can be set according to parameters of the on-resistance, the reverse voltage resistance and the like of the device.
As an example, the oxygen ion defect layer 113 includes an oxygen ion implantation dose of 1e10cm-2~1e15cm-2The oxygen ion implantation energy is between 200KeV and 15 MeV. In one embodiment, the oxygen ion implantation has an oxygen ion implantation dose of 1e13cm-2Oxygen ion implantationThe energy was 1 MeV. In yet another specific embodiment, the oxygen ion implantation has an oxygen ion implantation dose of 1e14cm-2The oxygen ion implantation energy was 3 MeV. The oxygen ion implantation can form an oxygen ion defect layer 113 in the substrate 101, and on one hand, the oxygen ion defect layer 113 is arranged on the back of the transition region and the back of the terminal region of the IGBT device, so that the hole life of the transition region and the terminal region is shortened, and further, when the IGBT device is conducted, the emission efficiency of a P-type collector on the back of the transition region and the back of the terminal region of the IGBT is reduced. On the other hand, one or more hydrogen ions can be adsorbed on the oxygen impurities and self-gap to form N-type doping, under the condition of certain hydrogen injection, the oxygen ions are added to increase hydrogen ion adsorption carriers and increase the N-type doping concentration, namely, the total concentration of the buffer layer can be effectively increased, and further, when the IGBT device is conducted, the emission efficiency of the P-type collector on the back of the transition region and the terminal region of the IGBT device is further reduced. In another aspect, the oxygen ion defect layer 113 can reduce the emission efficiency of the IGBT device transition region and the termination region back P-type collector, when the IGBT device is turned on, the amount of holes injected from the IGBT device transition region and the termination region back P-type collector is reduced, and meanwhile, there is a low lifetime region (oxygen ion defect layer 113) on the IGBT device back transition region and the termination region back, which can accelerate the recombination speed of electrons and holes in the transition region and the termination region when the IGBT device is turned off, reduce the amount of holes extracted from the transition region opening, and alleviate the problem of current concentration.
The collector region 112 comprises a conductive dopant ion implant dose of 1e12-1e14cm-2The conductive doping ion implantation energy is between 20KeV and 60 KeV. The conductive dopant ion may be, for example, boron or a compound of boron.
As shown in fig. 5, the hydrogen ion doped region 114 has a plurality of hydrogen ion doped layers having different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the plurality of hydrogen ion doped layers are gradually decreased from the second main surface toward the first main surface. The hydrogen ion doping region 114 contains hydrogen ion implantation dosage of 5e 11-5 e16cm-2The hydrogen ion implantation energy is between 200KeV and 1.5 MeV. Specifically, the hydrogen ion doped region 114 has 2 to 4 different hydrogensThe hydrogen ion doped layer with ion doping concentration in this embodiment can form a hydrogen ion doped layer with a plurality of different doping peaks in the substrate 101 after annealing by adjusting the dose and energy of each hydrogen ion implantation, for example, in this embodiment, the hydrogen ion doped region 114 has four different doping peaks, including, for example, a first doping peak 141, a second doping peak 142, a third doping peak 143, and a fourth doping peak 144.
As shown in fig. 5, the second main surface of the substrate 101 is also formed with a back metal 115. For example, the back metal 115 may be an Al/Ti/Ni/Ag metal stack.
As described above, the IGBT device and the method for manufacturing the same according to the present invention have the following advantageous effects:
according to the invention, the oxygen ion defect layer 113 is arranged on the back sides of the transition region and the terminal region of the IGBT device, so that the hole life of the transition region and the terminal region is reduced, and further, when the IGBT device is conducted, the emission efficiency of the P-type collector on the back sides of the transition region and the terminal region of the IGBT is reduced.
According to the invention, one or more hydrogen ions are adsorbed on the oxygen impurities and the self-gap to form N-type doping, under a certain hydrogen injection condition, the hydrogen ion adsorption carriers can be increased by increasing the oxygen ions, the N-type doping concentration is increased, namely, the total concentration of the buffer layer can be effectively increased, and further, when the IGBT device is conducted, the emission efficiency of the P-type collector at the back of the transition region and the terminal region of the IGBT device is further reduced.
The oxygen ion defect layer 113 can reduce the-emission efficiency of the P-type collectors at the back of the transition region and the terminal region, can reduce the injected hole quantity of the P-type collectors at the back of the transition region and the terminal region of the IGBT device when the IGBT device is switched on, can accelerate the electron and hole recombination speed of the transition region and the terminal region when the IGBT device is switched off, reduces the hole quantity extracted from the opening of the transition region, and relieves the current concentration problem.
According to the invention, the oxygen ion defect layer 113 is additionally arranged on the back surfaces of the transition region and the terminal region of the IGBT device, so that the emission efficiency of the transition region and the terminal region can be reduced when the IGBT device is switched on, and the electron and hole recombination speed of the transition region and the terminal region can be increased when the IGBT device is switched off, thereby effectively relieving the current concentration problem of the transition region and improving the reliability of an IGBT chip.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (14)
1. A manufacturing method of an IGBT device is characterized by comprising the following steps:
providing a substrate, wherein the substrate comprises a first main surface and a second main surface which are opposite, and completing a front process of an IGBT device on the first main surface to form an active region, a transition region and a terminal region of the IGBT device;
performing oxygen ion implantation on the second main surfaces of the transition region and the terminal region through a graphic mask to form an oxygen ion defect layer in the second main surfaces of the transition region and the terminal region;
conducting conductive doping ion implantation on the second main surface of the substrate to form a collector region on the second main surface of the substrate;
and hydrogen ion implantation is carried out on the second main surface of the substrate, so that a hydrogen ion doped region is formed in the second main surface, the oxygen ion defect layer is positioned in the hydrogen ion doped region, and oxygen ions of the oxygen ion defect layer are used as an adsorbent of hydrogen ions so as to increase the doping concentration of the hydrogen ions in the hydrogen ion doped region.
2. The method for manufacturing the IGBT device according to claim 1, wherein: the active region of the IGBT device comprises a well region, a trench gate structure, an emitter region and a carrier storage and doping region, wherein the well region, the trench gate structure, the emitter region and the carrier storage and doping region are arranged on the first main surface of the substrate, the trench gate structure penetrates through the well region to the substrate, the emitter region is arranged in the well region and is located on the side face of the trench gate structure, and the carrier storage and doping region is arranged below the well region.
3. The method for manufacturing the IGBT device according to claim 2, wherein: the IGBT device comprises a transition region, a terminal region and a transverse variable doping layer, wherein the transition region comprises a well region arranged on a first main surface of a substrate and a connecting hole connected with the well region, the terminal region of the IGBT device comprises a field oxide layer positioned on the first main surface of the substrate and a stop ring positioned at the edge of the terminal region, and the transition region and the terminal region further comprise transverse variable doping layers crossing the transition region and the terminal region.
4. The method for manufacturing the IGBT device according to claim 1, wherein: the oxygen ion implantation dosage is between 1e10cm-2~1e15cm-2The oxygen ion implantation energy is between 200KeV and 15 MeV.
5. The method for manufacturing the IGBT device according to claim 1, wherein: the conductive ion implantation dosage of the conductive doping ion implantation is 1e12-1e14cm-2The conductive ion implantation energy is between 20KeV and 60KeV, and then the conductive doping ions are activated by adopting a laser annealing process, the laser energy is between 1J and 2J, or the conductive doping ions are activated by adopting a furnace tube annealing process, and the annealing temperature is between 400 and 500 ℃.
6. The method for manufacturing the IGBT device according to claim 1, wherein: the hydrogen ion implantation includes performing hydrogen ion implantation on the second main surface of the substrate a plurality of times and annealing, so that the hydrogen ion doped region has a plurality of hydrogen ion doped layers with different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the plurality of hydrogen ion doped layers are gradually reduced from the second main surface to the first main surface.
7. The method for manufacturing the IGBT device according to claim 6, wherein: the hydrogen ion implantation dosage of the hydrogen ion implantation is 5e 11-5 e16cm-2The hydrogen ion implantation energy is between 200KeV and 1.5MeV, the annealing temperature is between 300 ℃ and 500 ℃, and the annealing time is between 0.5h and 5 h.
8. An IGBT device, characterized in that the IGBT device comprises:
the IGBT device comprises a substrate, a first electrode and a second electrode, wherein the substrate comprises a first main surface and a second main surface which are opposite, the first main surface is provided with a front surface structure of the IGBT device, and the IGBT device comprises an active region, a transition region and a terminal region;
an oxygen ion defect layer formed in the second main surfaces of the transition region and the termination region;
a collector region formed on the second main surface of the substrate;
and the hydrogen ion doping area is formed in the second main surface of the substrate, and the oxygen ion defect layer is positioned in the hydrogen ion doping area, wherein oxygen ions of the oxygen ion defect layer are used as an adsorber of hydrogen ions so as to increase the doping concentration of the hydrogen ions in the hydrogen ion doping area.
9. The IGBT device of claim 8, wherein: the active region of the IGBT device comprises a well region, a trench gate structure, an emitter region and a carrier storage and doping region, wherein the well region, the trench gate structure, the emitter region and the carrier storage and doping region are arranged on the first main surface of the substrate, the trench gate structure penetrates through the well region to the substrate, the emitter region is arranged in the well region and is located on the side face of the trench gate structure, and the carrier storage and doping region is arranged below the well region.
10. The IGBT device of claim 9, wherein: the IGBT device comprises a transition region, a terminal region and a transverse variable doping layer, wherein the transition region comprises a well region arranged on a first main surface of a substrate and a connecting hole connected with the well region, the terminal region of the IGBT device comprises a field oxide layer positioned on the first main surface of the substrate and a stop ring positioned at the edge of the terminal region, and the transition region and the terminal region further comprise transverse variable doping layers crossing the transition region and the terminal region.
11. The IGBT device of claim 8, wherein: the oxygen ion defect layer comprises oxygen ion implantation dosage of 1e10cm-2~1e15cm-2The oxygen ion implantation energy is between 200KeV and 15 MeV.
12. The IGBT device of claim 8, wherein: the collector region comprises a conductive dopant ion implantation dose of 1e12-1e14cm-2The conductive doping ion implantation energy is between 20KeV and 60 KeV.
13. The IGBT device of claim 8, wherein: the hydrogen ion doping region has a plurality of hydrogen ion doping layers having different hydrogen ion doping concentrations, and the hydrogen ion doping concentrations of the plurality of hydrogen ion doping layers are gradually reduced from the second main surface toward the first main surface.
14. The IGBT device of claim 8, wherein: the hydrogen ion doping region contains hydrogen ion implantation dosage of 5e 11-5 e16cm-2The hydrogen ion implantation energy is between 200KeV and 1.5 MeV.
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| CN114937596A (en) * | 2022-04-29 | 2022-08-23 | 上海积塔半导体有限公司 | Manufacturing method and structure of IGBT device |
| CN117542877B (en) * | 2024-01-10 | 2024-03-19 | 上海林众电子科技有限公司 | Carrier storage type IGBT device and manufacturing method thereof |
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| CN104637994B (en) * | 2013-11-13 | 2018-02-06 | 上海华虹宏力半导体制造有限公司 | Semiconductor devices and manufacture method |
| DE102014106594B4 (en) * | 2014-05-09 | 2022-05-05 | Infineon Technologies Ag | Process for manufacturing a semiconductor device |
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