CN108346705A - A kind of fast recovery diode and preparation method thereof - Google Patents
A kind of fast recovery diode and preparation method thereof Download PDFInfo
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- CN108346705A CN108346705A CN201710058594.5A CN201710058594A CN108346705A CN 108346705 A CN108346705 A CN 108346705A CN 201710058594 A CN201710058594 A CN 201710058594A CN 108346705 A CN108346705 A CN 108346705A
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- 238000011084 recovery Methods 0.000 title claims abstract description 82
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 150000002500 ions Chemical class 0.000 claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 229910052796 boron Inorganic materials 0.000 claims abstract description 8
- -1 phosphonium ion Chemical class 0.000 claims abstract description 8
- 238000005468 ion implantation Methods 0.000 claims description 10
- 230000000873 masking effect Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910001385 heavy metal Inorganic materials 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 2
- 238000001883 metal evaporation Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 23
- 150000001875 compounds Chemical class 0.000 abstract description 19
- 239000000969 carrier Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 18
- 230000007547 defect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000000155 isotopic effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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Abstract
The present invention provides a kind of fast recovery diode and preparation method thereof, the back side doping phosphonium ion that the preparation method is included in N-type substrate forms N+ type semiconductor layers, and well region and terminal structure are formed in the front doping boron ion of N-type substrate；Ion implanting and annealing are carried out to well region successively, form positive Localized Lifetime Control area；Respectively in the front of N-type substrate and the lower surface of N+ type semiconductor layers, front face metal electrode and rear-face contact metal electrode are formed；Ion implanting and annealing are carried out to the back side of N-type substrate successively, form back side Localized Lifetime Control area.Compared with prior art, a kind of fast recovery diode provided by the invention and preparation method thereof, the conductivity modulation effect of fast recovery diode can be improved, it can also promote the compound of excess carriers in reversely restoring process, effectively accelerate reversely restoring process, it reduces reverse recovery time, and then reduces Reverse recovery tail currents and energy loss.
Description
Technical field
The present invention relates to technical field of semiconductor device, and in particular to a kind of fast recovery diode and preparation method thereof.
Background technology
Fast recovery diode (Fast Recovery Diode, FRD) is a kind of good, Reverse recovery with switching characteristic
The semiconductor diode of time short feature, is mainly used in the equipment such as converter valve, breaker.Fig. 1 is fast recovery diode
Basic structure and doping concentration schematic diagram, the structure of general-purpose diode be generally p-type semiconductor and be in direct contact with n-type semiconductor
Pn-junction is formed, and fast recovery diode increases the areas intrinsic semiconductor i among the p-type of general-purpose diode, n-type silicon material,
Constitute p-i-n silicon chips.Wherein：The method in the areas intrinsic semiconductor i is prepared mainly by low in p-type layer and n-layer formation one
The areas n- of concentration so that it is the areas intrinsic semiconductor i that the areas n- can be approximately considered compared to p-type area and n-type area.
Fast recovery diode is regulated and controled currently, life control method may be used, to improve its turn-on and turn-off
Compromise characteristic.The essence in life control area is formed using electron irradiation or heavy metal diffusion or proton/He isotopic geochemistry
The energy level of defect, these defects is central closer to forbidden band compared to impurity ability, to the compound action bigger of carrier, therefore can
Effectively to enhance the reverse recovery characteristic of fast recovery diode.The life control method of fast recovery diode includes mainly
Global life control and Localized Lifetime Control, wherein global life control generally uses electronic irradiation technique or heavy metal to spread
It is formed, life control is carried out to the whole of fast recovery diode；Localized Lifetime Control generally uses proton or He isotopic geochemistry
It is formed, life control is carried out to the privileged site of fast recovery diode.But the life control method of fast recovery diode
There is also following defects：
(1) when carrying out life control to fast recovery diode using global electronic irradiation technique, global electron irradiation skill
Art can form defect in whole positions of fast recovery diode so that during forward conduction, due to conductivity modulation effect
A large amount of electrons and holes for flowing into the base areas n- can not preferably carry out conductance tune because the compound action of defect level is largely compound
System, causes the forward voltage drop of fast recovery diode to be affected larger.
(2) the life control area that global electron irradiation is formed to the compound actions of excess carriers in reversely restoring process simultaneously
There is no very strong specific aim, causes in fast recovery diode in the reversely restoring process later stage, excess carriers cannot lead in time
It crosses compound action and carries out compound, and cause reverse recovery time long, tail currents are excessive, and Reverse recovery energy loss is big etc. asks
Topic.
Invention content
It is overcome the deficiencies of existing technologies to meet, the present invention provides a kind of fast recovery diode and its preparation sides
Method.
In a first aspect, a kind of technical solution of the preparation method of fast recovery diode is in the present invention：
The preparation method includes：
At the back side of N-type substrate, doping phosphonium ion forms N+ type semiconductor layers, in the front doping boron ion shape of N-type substrate
At well region and terminal structure；
Ion implanting and annealing are carried out to the well region successively, form positive Localized Lifetime Control area；
Respectively the N-type substrate front and N+ type semiconductor layers lower surface, formed front face metal electrode and
Rear-face contact metal electrode；
Ion implanting and annealing are carried out to the back side of the N-type substrate successively, form back side Localized Lifetime Control area.
Second aspect, a kind of technical solution of fast recovery diode is in the present invention：
The fast recovery diode includes：
N-type substrate；
N+ type semiconductor layers are arranged at the back side of the N-type substrate；
Well region and terminal structure, the two are arranged at the front of the N-type substrate；
Positive Localized Lifetime Control area is arranged in the well region；
Back side Localized Lifetime Control area is arranged in the N-type substrate；
Front face metal electrode is arranged in the front of the N-type substrate；
Rear-face contact metal electrode is arranged in the lower surface of the N+ type semiconductor layers.
Compared with the immediate prior art, the beneficial effects of the invention are as follows：
1, the preparation method of a kind of fast recovery diode provided by the invention is respectively formed in the front and back of substrate
Positive Localized Lifetime Control area and back side Localized Lifetime Control area constitute double local fast recovery diodes so that carrier
It is compound to exist only in back side Localized Lifetime Control area, and it is less in wide range in substrate the compound of carrier occurs, therefore can
To improve the conductivity modulation effect of fast recovery diode；Meanwhile back side Localized Lifetime Control area can in reversely restoring process
To promote the compound of excess carriers in reversely restoring process, effectively accelerate reversely restoring process, reduce reverse recovery time,
And then reduce Reverse recovery tail currents and energy loss；
2, a kind of fast recovery diode provided by the invention, including positive Localized Lifetime Control area and back side Localized Lifetime
Control zone so that the compound of carrier exists only in back side Localized Lifetime Control area, and less generation in wide range in substrate
Carrier it is compound, therefore the conductivity modulation effect of fast recovery diode can be improved；Meanwhile it being carried on the back in reversely restoring process
Face Localized Lifetime Control area can promote the compound of excess carriers in reversely restoring process, effectively accelerate Reverse recovery mistake
Journey reduces reverse recovery time, and then reduces Reverse recovery tail currents and energy loss.
Description of the drawings
Fig. 1：The basic structure and doping concentration schematic diagram of fast recovery diode；
Fig. 2：N+ type semiconductor layers schematic diagram in the embodiment of the present invention；
Fig. 3：Oxide layer schematic diagram in the embodiment of the present invention；
Fig. 4：Intermediate ion of the embodiment of the present invention injects window schematic diagram；
Fig. 5：Well region and terminal structure schematic diagram in the embodiment of the present invention；
Fig. 6：Positive Localized Lifetime Control area schematic diagram in the embodiment of the present invention；
Fig. 7：Front face metal electrode and rear-face contact metal electrode schematic diagram in the embodiment of the present invention；
Fig. 8：Back side Localized Lifetime Control area schematic diagram in the embodiment of the present invention；
Fig. 9：The reverse recovery characteristic test curve schematic diagram of fast recovery diode in the embodiment of the present invention；
Wherein：1：N-type substrate；2：N+ type semiconductor layers；3：Oxide layer；4：Well region；5：Positive Localized Lifetime Control area；6：
Terminal structure；7：Front face metal electrode；8：Rear-face contact metal electrode；9：Back side Localized Lifetime Control area.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical solution in the embodiment of the present invention clearly and completely illustrated, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
The every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Separately below in conjunction with attached drawing, to a kind of preparation method progress of fast recovery diode provided in an embodiment of the present invention
Explanation.
The preparation method of fast recovery diode can be prepared in the present embodiment as steps described below, specially：
Step S101：At the back side of N-type substrate, doping phosphonium ion forms N+ type semiconductor layers, is mixed in the front of N-type substrate
Miscellaneous boron ion forms well region and terminal structure.
Step S102：Ion implanting and annealing are carried out to well region successively, form positive Localized Lifetime Control area.
Step S103：Respectively in the front of N-type substrate and the lower surface of N+ type semiconductor layers, front face metal electricity is formed
Pole and rear-face contact metal electrode.
Step S104：Ion implanting and annealing are carried out to the back side of N-type substrate successively, form back side Localized Lifetime Control
Area.
In the present embodiment positive Localized Lifetime Control area and back side Localized Lifetime are respectively formed in the front and back of substrate
Control zone constitutes double local fast recovery diodes so that and the compound of carrier exists only in back side Localized Lifetime Control area, and
It is less in wide range in substrate that the compound of carrier occurs, therefore the conductance modulation effect of fast recovery diode can be improved
It answers；Meanwhile Localized Lifetime Control area in the back side can promote excess carriers in reversely restoring process in reversely restoring process
It is compound, effectively accelerate reversely restoring process, reduce reverse recovery time, and then reduces Reverse recovery tail currents and energy damage
Consumption.
Further, well region is formed in the front of substrate and terminal structure can be according to following in the present embodiment step S101
Step is implemented：
1, oxide layer is formed in the front of N-type substrate.
It can be in hydrogen H in the present embodiment2With oxygen O2Atmosphere under to N-type substrate carry out high-temperature oxydation formed oxide layer.
Wherein：The temperature of high-temperature oxydation is 900 DEG C~1100 DEG C, and the time is 1h~10h.
2, lithography and etching is carried out to oxide layer and forms multiple ion implantation windows.
Masking layer can be formed in the present embodiment in oxide layer, and masking layer is exposed successively and develop formation from
Son injection window.Wherein：The thickness of masking layer is 300 angstroms~500 angstroms.
3, boron ion is injected to N-type substrate by multiple ion implantation windows, is respectively formed well region and terminal structure.
Can be 1E13cm to the front implantation dosage of N-type substrate in the present embodiment-2~1E15cm-2Boron ion, and
1200 DEG C of nitrogen N2Knot is carried out under atmosphere, forms well region and terminal structure.
Further, positive Localized Lifetime Control area is formed in the present embodiment step S102 can be real as steps described below
It applies：
1, metal shadowing layer is formed in the front of N-type substrate.
2, by the corresponding ion implantation window of well region, hydrogen ion or heavy metal ion are injected to well region.
3, it anneals to well region, forms positive Localized Lifetime Control area.Meanwhile in order to meet the needs of actual condition,
The preparation method in above-mentioned positive Localized Lifetime Control area everybody other than well region in N-type substrate can also be used in the present embodiment
It sets to form positive Localized Lifetime Control area.
Further, back side Localized Lifetime Control area is formed in the present embodiment step S104 can be by N-type substrate
Back side implantation dosage is 1E9cm-2To 1E13cm-2Ion, and to injection ion after substrate carry out annealing form back side local
Life control area.
Further, the present invention provides the optimal technical schemes of a fast recovery diode preparation method, specially：
1, N+ type semiconductor layers are prepared
Fig. 2 is N+ type semiconductor layer schematic diagrames in the embodiment of the present invention, as shown, in N-type substrate 2 in the present embodiment
The back side forms N+ type semiconductor layers 1.
2, oxide layer is prepared
Fig. 3 is oxide layer schematic diagram in the embodiment of the present invention, as shown, in the positive shape of N-type substrate 2 in the present embodiment
At oxide layer 3.
3, ion implantation window is prepared
Fig. 4 be intermediate ion of the embodiment of the present invention inject window schematic diagram, as shown, in the present embodiment to oxide layer 3 into
Row lithography and etching forms multiple ion implantation windows.
4, well region and terminal structure are prepared
Fig. 5 is well region and terminal structure schematic diagram in the embodiment of the present invention, as shown, to passing through ion in the present embodiment
It injects window and injects ion to N-type substrate 2, form well region 4 and terminal structure 6.
5, positive Localized Lifetime Control area is prepared
Fig. 6 is positive Localized Lifetime Control area schematic diagram in the embodiment of the present invention, as shown, to well region in the present embodiment
4 injection ions form positive Localized Lifetime Control area 5.
6, metal electrode is prepared
Fig. 7 is front face metal electrode and rear-face contact metal electrode schematic diagram in the embodiment of the present invention, as shown,
Respectively in the front of N-type substrate 2 and the lower surface deposited metal of N+ type semiconductor layers in the present embodiment, and metal layer is carried out
Lithography and etching forms front face metal electrode 7 and rear-face contact metal electrode 8.
7, back side Localized Lifetime Control area is prepared
Fig. 8 is back side Localized Lifetime Control area schematic diagram in the embodiment of the present invention, as shown, right successively in the present embodiment
The back side of N-type substrate 2 carries out ion implanting and annealing, forms back side Localized Lifetime Control area 9.
Below in conjunction with the accompanying drawings, respectively to double local fast recovery diode DLLC in the present embodiment and conventional fast quick-recovery two
The simulated effect of pole pipe GLC+LLC illustrates.
Fig. 9 is the reverse recovery characteristic test curve schematic diagram of fast recovery diode in the embodiment of the present invention, as schemed institute
Show, the Reverse recovery later stage phase in the same time under, the tail currents of double local fast recovery diodes be significantly less than it is conventional quickly
The tail currents of recovery diode, and then the reverse recovery time of double local fast recovery diodes can be determined much smaller than conventional
The reverse recovery time of fast recovery diode.The fast quick-recovery of double locals two can be calculated according to parameters in attached drawing 9
The ratio between reverse recovery time of pole pipe and conventional fast recovery diode is close to 1:7, energy loss in reversely restoring process it
Than close to 1:15.
The present invention also provides a kind of fast recovery diodes, and provide specific embodiment.
Fast recovery diode includes N-type substrate, N+ type semiconductor layers, oxide layer, well region and terminal knot in the present embodiment
Structure, positive Localized Lifetime Control area, back side Localized Lifetime Control area, front face metal electrode and rear-face contact metal electrode.
Wherein：N+ type semiconductor layers are arranged at the back side of N-type substrate, and well region and terminal structure are arranged at N-type substrate
Front, positive Localized Lifetime Control area are arranged in well region, and back side Localized Lifetime Control area is arranged in N-type substrate, and front connects
Tactile metal electrode is arranged in the front of N-type substrate, and rear-face contact metal electrode is arranged in the lower surface of N+ type semiconductor layers, oxidation
Layer is arranged in the front of N-type substrate.
The thickness of oxide layer is 800nm~2000nm, back side Localized Lifetime Control area and N+ type semiconductors in the present embodiment
The spacing of the lower surface of layer is 20 μm~150 μm.
Fast recovery diode in the present embodiment, including positive Localized Lifetime Control area and back side Localized Lifetime Control area,
So that the compound of carrier exists only in back side Localized Lifetime Control area, and that carrier does not occur in wide range in substrate
It is compound, therefore the conductivity modulation effect of fast recovery diode can be improved；Meanwhile the back side local in reversely restoring process
Life control area can promote the compound of excess carriers in reversely restoring process, effectively accelerate reversely restoring process, reduce
Reverse recovery time, and then reduce Reverse recovery tail currents and energy loss.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of preparation method of fast recovery diode, which is characterized in that the preparation method includes：
At the back side of N-type substrate, doping phosphonium ion forms N+ type semiconductor layers, and trap is formed in the front doping boron ion of N-type substrate
Area and terminal structure；
Ion implanting and annealing are carried out to the well region successively, form positive Localized Lifetime Control area；
Respectively in the front of the N-type substrate and the lower surface of N+ type semiconductor layers, front face metal electrode and the back side are formed
Contacting metal electrode；
Ion implanting and annealing are carried out to the back side of the N-type substrate successively, form back side Localized Lifetime Control area.
2. a kind of preparation method of fast recovery diode as described in claim 1, which is characterized in that it is described substrate just
Face forms well region and terminal structure includes：
Oxide layer is formed in the front of the N-type substrate；
Lithography and etching is carried out to the oxide layer and forms multiple ion implantation windows；
Boron ion is injected to N-type substrate by multiple ion implantation windows, is respectively formed well region and terminal structure.
3. a kind of preparation method of fast recovery diode as claimed in claim 2, which is characterized in that it is described substrate just
Face forms oxide layer：In hydrogen H2With oxygen O2Atmosphere under to N-type substrate carry out high-temperature oxydation formed oxide layer；It is described
The temperature of high-temperature oxydation is 900 DEG C~1100 DEG C, and the time is 1h~10h.
4. a kind of preparation method of fast recovery diode as claimed in claim 2, which is characterized in that it is described to oxide layer into
Row lithography and etching forms ion implantation window：Masking layer is formed in the oxide layer, and successively to the masking layer
It is exposed and development forms ion implantation window；The thickness of the masking layer is 300 angstroms~500 angstroms.
5. a kind of preparation method of fast recovery diode as claimed in claim 2, which is characterized in that the is formationed well region with
Terminal structure includes：It is 1E13cm to the front implantation dosage of the N-type substrate-2~1E15cm-2Boron ion, and 1200
DEG C nitrogen N2Knot is carried out under atmosphere, forms the well region and terminal structure.
6. a kind of preparation method of fast recovery diode as described in claim 1, which is characterized in that described successively to well region
It carries out ion implanting and annealing formation positive Localized Lifetime Control area includes：
Metal shadowing layer is formed in the front of the N-type substrate；
By the corresponding ion implantation window of the well region, hydrogen ion or heavy metal ion are injected to the well region；
It anneals to the well region, forms positive Localized Lifetime Control area.
7. a kind of preparation method of fast recovery diode as described in claim 1, which is characterized in that described to N-type substrate
The back side carry out ion implanting include：It is 1E9cm to the back side implantation dosage of the N-type substrate-2To 1E13cm-2Ion.
8. a kind of fast recovery diode, which is characterized in that the fast recovery diode includes：
N-type substrate；
N+ type semiconductor layers are arranged at the back side of the N-type substrate；
Well region and terminal structure, the two are arranged at the front of the N-type substrate；
Positive Localized Lifetime Control area is arranged in the well region；
Back side Localized Lifetime Control area is arranged in the N-type substrate；
Front face metal electrode is arranged in the front of the N-type substrate；
Rear-face contact metal electrode is arranged in the lower surface of the N+ type semiconductor layers.
9. a kind of fast recovery diode as claimed in claim 8, which is characterized in that the fast recovery diode further includes
Oxide layer is arranged in the front of N-type substrate；The thickness of the oxide layer is 800nm~2000nm.
10. a kind of fast recovery diode as claimed in claim 8, which is characterized in that
The spacing of back side Localized Lifetime Control area and the lower surface of N+ type semiconductor layers is 20 μm~150 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710058594.5A CN108346705A (en) | 2017-01-23 | 2017-01-23 | A kind of fast recovery diode and preparation method thereof |
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| CN201710058594.5A CN108346705A (en) | 2017-01-23 | 2017-01-23 | A kind of fast recovery diode and preparation method thereof |
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| CN113809071A (en) * | 2021-07-26 | 2021-12-17 | 浙江芯国半导体有限公司 | Circuit comprising schottky diode and related application |
| CN114023644A (en) * | 2021-10-29 | 2022-02-08 | 江苏索力德普半导体科技有限公司 | Fast recovery diode and preparation method thereof |
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Application publication date: 20180731 |