CN114023644B - Fast recovery diode and preparation method thereof - Google Patents
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- CN114023644B CN114023644B CN202111272922.4A CN202111272922A CN114023644B CN 114023644 B CN114023644 B CN 114023644B CN 202111272922 A CN202111272922 A CN 202111272922A CN 114023644 B CN114023644 B CN 114023644B
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- 238000011084 recovery Methods 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000005468 ion implantation Methods 0.000 claims abstract description 19
- 230000007547 defect Effects 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 11
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000000969 carrier Substances 0.000 abstract description 7
- 238000009826 distribution Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000007943 implant Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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Abstract
The invention discloses a fast recovery diode and a preparation method thereof, which relate to the technical field of semiconductors, and the preparation method comprises the following steps: providing an N-type low-doped substrate, forming a terminal area and a main junction area on the first surface of the N-type low-doped substrate, performing ion implantation in the N-type low-doped substrate below the main junction area to form an N-type defect layer, and performing ion implantation on the second surface of the N-type low-doped substrate to form an N-type doped layer. According to the invention, an N-type defect thin layer is formed in the N-type low-doped substrate by adopting an ion implantation method as a composite center of carriers, and the carriers can be discharged out of the FRD device body under the drive of a built-in electric field in a very short time by changing the emissivity of a pn junction and the distribution of the carriers, so that the rapid reverse recovery is realized; and the softness factor of the FRD can be changed by adjusting the concentration distribution of the N-type defect thin layer, so that the EMC interference of the system is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a fast recovery diode and a preparation method thereof.
Background
The fast recovery diode is FRD (Fast Recovery Diode) for short, is a semiconductor diode with good switching characteristic and short reverse recovery time, is mainly applied to electronic circuits such as a switching power supply, a PWM (pulse-width modulation) and a frequency converter, and is used as a freewheeling diode in a modern power electronic circuit and is used together with an IGBT. Unlike common rectifier diode, the fast recovery diode usually adopts PIN structure, and has the characteristics of high reverse withstand voltage, less reverse recovery charge, small reverse recovery current, low loss, etc., and is widely applied in high voltage occasions.
In order to improve the overall efficiency of the power electronics system and to improve the power density, the operating frequency of the system is increasingly required. Has been increased from the conventional power frequency (50 Hz) to tens of kHz or even hundreds of kHz. By increasing the operating frequency of the system, the power output capacity per unit volume has been increased by a factor of hundreds. FRD is an indispensable device in high frequency systems. The performance of FRD affects important indexes such as efficiency, volume, reliability and the like of the whole system to a great extent.
Conventional FRD fabrication uses a platinum (Pt) diffusion process to generate a large number of recombination centers inside Si crystals, thereby reducing minority carrier lifetime and improving reverse recovery speed. In the process, the diffusion speed of platinum (Pt) is very high, the required temperature is low, heavy metal pollution to other process equipment is easily caused in the whole process flow, the pollution is difficult to eliminate, and most modern semiconductor production lines are not willing to introduce the process; FRD is typically produced only in product lines below 6 inches, which further limits the capacity of FRD and also limits the rate at which the process of FRD can be advanced to higher levels.
In addition, since platinum (Pt) diffuses rapidly in Si crystals, the density of recombination centers is uniformly distributed in FRD fabricated by the conventional process, which limits the improvement of the softness factor of FRD. In practical application, FRD needs to be matched with on and off of large current, and softness factor is important to performance, reliability and electromagnetic pollution to surrounding environment of the system. When FRD with poor reverse recovery softness is used, high dI/dt is generated during reverse recovery. In inductive circuits, or due to stray inductances of the system, an overshoot of voltage is generated, with an amplitude of LdI/dt. Where L is the inductance of the system. When the softness factor is not good and dI/dt is high, the voltage overshoot is high, which causes the actual voltage applied to the device to exceed the withstand voltage of the device, and the device is damaged. Meanwhile, the high dI/dt can cause larger EMC electromagnetic pollution to influence the work of surrounding circuits and even the normal work of other electronic equipment, and other circuits are required to be added to eliminate the electromagnetic pollution, so that the system cost is increased.
Disclosure of Invention
The present inventors have proposed a fast recovery diode and a method for manufacturing the fast recovery diode, which are directed against the above problems and technical needs, and the technical scheme is as follows:
in a first aspect, the invention discloses a method for preparing a fast recovery diode, which comprises the following steps:
providing an N-type low-doped substrate;
forming a terminal area and a main junction area on the first surface of the N-type low-doped substrate;
ion implantation is carried out on the N-type low doped substrate below the main junction region to form an N-type defect layer;
and performing ion implantation on the second surface of the N-type low-doped substrate to form an N-type doped layer.
Further, forming a termination region and a main junction region on the first surface of the N-type low doped substrate, including:
forming an oxide layer on the first surface of the N-type low-doped substrate;
photoetching and etching the oxide layer to form ion implantation windows of a terminal area and a main junction area;
p-type ions are implanted into the ion implantation window and junction pushing is carried out, so that a terminal area and a main junction area are formed.
Further, the preparation method further comprises the following steps:
the N-type low-doped substrate is thinned from the second surface prior to ion implantation of the second surface of the N-type low-doped substrate.
Further, the preparation method further comprises the following steps:
forming an anode electrode over the main junction region;
and forming a cathode electrode on the second surface of the N-type low-doped substrate provided with the N-type doped layer.
Further, the resistivity of the N-type defect layer is lower than that of the N-type low-doped substrate.
Further, the ion concentration of the N-type defect layer is distributed in a gradient manner.
Further, the N-type low doped substrate is a monocrystalline silicon substrate.
Further, the junction depth of the termination region is 6 μm to 10 μm, and the junction depth of the main junction region is smaller than that of the termination region.
In a second aspect, the invention discloses a fast recovery diode comprising an N-type low doped substrate; a terminal area and a main junction area are formed on the first surface of the N-type low-doped substrate; an N-type defect layer is formed in the N-type low-doped substrate below the main junction region; an N-type doped layer is formed on the second surface of the N-type low-doped substrate.
Further, the fast recovery diode further includes: an anode electrode formed over the main junction region; and a cathode electrode formed on the second surface of the N-type low doped substrate.
The beneficial technical effects of the invention are as follows:
the invention discloses a fast recovery diode and a preparation method thereof, wherein the preparation method is different from the traditional heavy metal diffusion to reduce the service life of carriers, but adopts an ion implantation method to form an N-type defect thin layer in an N-type low-doped substrate as a recombination center of carriers, and the carriers can be discharged out of the FRD device body under the drive of a built-in electric field in a short time by changing the emissivity of a pn junction and the distribution of the carriers, so that the fast reverse recovery is realized; and the softness factor of the FRD can be changed by adjusting the concentration distribution of the N-type defect thin layer, so that the EMC interference of the system is improved. And as no heavy metal is intervened in the whole preparation process, the pollution to the process line is avoided.
In addition, the preparation method of the fast recovery diode directly adopts single crystal as a raw material, and an epitaxial layer does not need to be grown on a single crystal wafer, so that the problem of wafer warpage caused by thick epitaxial layer is avoided, and the bottleneck that raw materials cannot be produced in a large scale in the traditional FRD production is broken through.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a fast recovery diode according to the present disclosure.
Fig. 2 to 5 are process diagrams for manufacturing a fast recovery diode according to the present disclosure.
Detailed Description
The following describes the embodiments of the present invention further with reference to the drawings.
The embodiment discloses a method for preparing a fast recovery diode, please refer to a flowchart shown in fig. 1 and process diagrams shown in fig. 2-5, the method comprises the following steps:
step 1, providing an N-type low-doped substrate 1; preferably, the N-type low doped substrate is a monocrystalline silicon substrate.
Step 2, forming a terminal 2 and a main junction region 3 on the first surface of the N-type low-doped substrate 1;
specifically, an oxide layer 8 is formed on the first surface of the N-type low-doped substrate 1;
photoetching and etching the oxide layer 8 to form ion implantation windows of a terminal area and a main junction area;
injecting P-type ions into the ion injection window and pushing the junction to form a terminal region 2 and a main junction region 3; preferably, the P-type ions are boron ions; in one embodiment, the junction depth of the termination region 2 is 6 μm-10 μm and the junction depth of the main junction region 3 is smaller than the termination region 2.
Step 3, ion implantation is carried out on the N-type low doped substrate 1 below the main junction region 3 to form an N-type defect layer 4; preferably, the resistivity of the N-type defect layer 4 is lower than that of the N-type low-doped substrate 1; in one embodiment, the ion concentration of the N-type defect layer is graded using a graded implant, the implant ions comprising at least one of H, P or As.
And 4, performing ion implantation on the second surface of the N-type low-doped substrate 1 to form an N-type doped layer 5.
Preferably, the N-type low doped substrate 1 is thinned from the second surface before ion implantation is performed on the second surface of the N-type low doped substrate 1; wherein, the thickness of the thinned substrate meets the pressure-resistant requirement of the device. In one embodiment, the thinning process should employ mechanical grinding and/or chemical etching to ensure reliability of the backside electrode.
Preferably, the preparation method further comprises the following steps:
forming an anode electrode 6 over the main junction region 3; alternatively, the anode electrode 6 may be of an Al-Si or Al-Si-Cu structure;
forming a cathode electrode 7 on the second surface of the N-type low doped substrate 1 on which the N-type doped layer 5 is formed; alternatively, the cathode electrode 7 may be of Ti-Ni-Ag structure.
The preparation method disclosed by the invention is different from the traditional method for reducing the service life of the current carrier by heavy metal diffusion, and an N-type defect thin layer is formed in an N-type low-doped substrate by adopting an ion implantation method and is used as a recombination center of the current carrier, and the current carrier can be discharged out of the FRD device body under the drive of a built-in electric field in a short time by changing the emissivity of a pn junction and the distribution of the current carrier, so that the rapid reverse recovery is realized.
Furthermore, the preparation method directly adopts single crystal as a raw material, and an epitaxial layer does not need to be grown on a single crystal wafer, so that the problem of wafer warpage caused by thick epitaxial layer is avoided, and the bottleneck that raw materials cannot be produced in a large scale in the traditional FRD production is broken through.
The invention also provides a fast recovery diode, concretely referring to the schematic structural diagram of the fast recovery diode shown in fig. 5, the fast recovery diode comprises an N-type low doped substrate 1; a terminal region 2 and a main junction region 3 are formed on the first surface of the N-type low-doped substrate 1; an N-type defect layer 4 is formed in the N-type low doped substrate 1 below the main junction region 3; the second surface of the N-type low doped substrate 1 is formed with an N-type doped layer 5.
Further, the fast recovery diode further includes: an anode electrode 6 formed above the main junction region 3; and a cathode electrode 7 formed on the second surface of the N-type low doped substrate 1.
What has been described above is only a preferred embodiment of the present application, and the present invention is not limited to the above examples. It is to be understood that other modifications and variations which may be directly derived or contemplated by those skilled in the art without departing from the spirit and concepts of the present invention are deemed to be included within the scope of the present invention.
Claims (10)
1. A method for manufacturing a fast recovery diode, the method comprising:
providing an N-type low-doped substrate;
forming a terminal area and a main junction area on the first surface of the N-type low-doped substrate;
performing ion implantation into the N-type low-doped substrate below the main junction region to form an N-type defect layer, wherein the implanted ions comprise at least one of P or As;
and performing ion implantation on the second surface of the N-type low-doped substrate to form an N-type doped layer.
2. The method of manufacturing of claim 1, wherein forming a termination region and a main junction region on the first surface of the N-type low doped substrate comprises:
forming an oxide layer on the first surface of the N-type low-doped substrate;
photoetching and etching the oxide layer to form ion implantation windows of a terminal area and a main junction area;
and implanting P-type ions into the ion implantation window and performing junction pushing to form a terminal region and a main junction region.
3. The method of manufacturing according to claim 1, characterized in that the method of manufacturing further comprises:
and before ion implantation is carried out on the second surface of the N-type low-doped substrate, thinning the N-type low-doped substrate from the second surface.
4. The method of manufacturing according to claim 1, characterized in that the method of manufacturing further comprises:
forming an anode electrode over the main junction region;
and forming a cathode electrode on the second surface of the N-type low-doped substrate provided with the N-type doped layer.
5. The method of claim 1, wherein the N-type defect layer has a resistivity lower than the N-type low doped substrate.
6. The method of claim 1, wherein the ion concentration of the N-type defect layer is graded.
7. The method of manufacturing according to claim 1, wherein the N-type low doped substrate is a single crystal silicon substrate.
8. The method of claim 2, wherein the junction depth of the termination region is 6 μm to 10 μm and the junction depth of the main junction region is smaller than the termination region.
9. A fast recovery diode is characterized by comprising an N-type low-doped substrate; a terminal area and a main junction area are formed on the first surface of the N-type low-doped substrate; an N-type defect layer is formed in the N-type low-doped substrate below the main junction region, and the implanted ions comprise at least one of P or As; and an N-type doped layer is formed on the second surface of the N-type low-doped substrate.
10. The fast recovery diode of claim 9, further comprising: an anode electrode formed over the main junction region; and a cathode electrode formed on the second surface of the N-type low doped substrate.
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| CN202111272922.4A CN114023644B (en) | 2021-10-29 | 2021-10-29 | Fast recovery diode and preparation method thereof |
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| CN202111272922.4A CN114023644B (en) | 2021-10-29 | 2021-10-29 | Fast recovery diode and preparation method thereof |
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| CN114023644B true CN114023644B (en) | 2024-02-23 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102694032A (en) * | 2011-03-24 | 2012-09-26 | 株式会社东芝 | Power semiconductor device |
| CN104952936A (en) * | 2014-03-25 | 2015-09-30 | 国家电网公司 | Fast recovery diode and manufacturing method thereof |
| CN105405759A (en) * | 2015-12-18 | 2016-03-16 | 江苏宏微科技股份有限公司 | Fast recovery diode preparation method by controlling recovery characteristics through hydrogen injection process |
| CN108346705A (en) * | 2017-01-23 | 2018-07-31 | 全球能源互联网研究院有限公司 | A kind of fast recovery diode and preparation method thereof |
| CN208478345U (en) * | 2018-08-07 | 2019-02-05 | 济南晶恒电子有限责任公司 | A kind of high current low forward voltage drop SiC schottky diode chip |
| CN109326654A (en) * | 2017-07-31 | 2019-02-12 | 艾赛斯有限责任公司 | Fast quick-recovery backward dioded |
-
2021
- 2021-10-29 CN CN202111272922.4A patent/CN114023644B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102694032A (en) * | 2011-03-24 | 2012-09-26 | 株式会社东芝 | Power semiconductor device |
| CN104952936A (en) * | 2014-03-25 | 2015-09-30 | 国家电网公司 | Fast recovery diode and manufacturing method thereof |
| CN105405759A (en) * | 2015-12-18 | 2016-03-16 | 江苏宏微科技股份有限公司 | Fast recovery diode preparation method by controlling recovery characteristics through hydrogen injection process |
| CN108346705A (en) * | 2017-01-23 | 2018-07-31 | 全球能源互联网研究院有限公司 | A kind of fast recovery diode and preparation method thereof |
| CN109326654A (en) * | 2017-07-31 | 2019-02-12 | 艾赛斯有限责任公司 | Fast quick-recovery backward dioded |
| CN208478345U (en) * | 2018-08-07 | 2019-02-05 | 济南晶恒电子有限责任公司 | A kind of high current low forward voltage drop SiC schottky diode chip |
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Denomination of invention: A fast recovery diode and its preparation method Granted publication date: 20240223 Pledgee: Bank of China Co.,Ltd. Wuxi High tech Industrial Development Zone Branch Pledgor: Jiangsu solidep Semiconductor Technology Co.,Ltd. Registration number: Y2024980008815 |
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