CN105405759A - Fast recovery diode preparation method by controlling recovery characteristics through hydrogen injection process - Google Patents
Fast recovery diode preparation method by controlling recovery characteristics through hydrogen injection process Download PDFInfo
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- CN105405759A CN105405759A CN201510957763.XA CN201510957763A CN105405759A CN 105405759 A CN105405759 A CN 105405759A CN 201510957763 A CN201510957763 A CN 201510957763A CN 105405759 A CN105405759 A CN 105405759A
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- 238000011084 recovery Methods 0.000 title claims abstract description 45
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000001257 hydrogen Substances 0.000 title claims abstract description 39
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000002347 injection Methods 0.000 title claims abstract description 22
- 239000007924 injection Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000000137 annealing Methods 0.000 claims abstract description 25
- 230000007547 defect Effects 0.000 claims abstract description 18
- 238000001704 evaporation Methods 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 239000003292 glue Substances 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 230000001681 protective effect Effects 0.000 claims abstract description 6
- 230000007797 corrosion Effects 0.000 claims abstract description 4
- 238000005260 corrosion Methods 0.000 claims abstract description 4
- 238000002513 implantation Methods 0.000 claims description 39
- 238000005516 engineering process Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000005468 ion implantation Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 4
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical compound Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910003310 Ni-Al Inorganic materials 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
The invention relates to a fast recovery diode preparation method by controlling recovery characteristics through a hydrogen injection process. Preparation is carried out on a silicon wafer, wherein the front process of the silicon wafer is completed; and the front of the silicon wafer has protective glue. The fast recovery diode preparation method comprises the following steps: (1), injecting hydrogen ion in a P-type doped area of an active area on the front of the silicon wafer in an ion injection manner, and generating a micro-defect due to impact in the P-type doped area of the silicon wafer; (2), removing the protective glue on the front of the silicon wafer, then, putting the silicon wafer in an annealing furnace, repairing a part of defect area, forming a micro-defect area at a set position, and forming a recombination centre having influence on formation of the minority carrier lifetime; (3), performing metal sputtering or evaporating on the front of the silicon wafer, and forming an ohmic contact metal anode layer through photo-etching corrosion; and (4), thinning the back of the silicon wafer, and manufacturing a back metal layer at the back of the silicon wafer by using an evaporating or sputtering method so as to form the metal anode layer. According to the invention, a steady local defect area is formed by adopting hydrogen ion injection and subsequent low-temperature annealing processes; and thus, injection of the active area to a base area and the lifetime of minority carriers can be reduced.
Description
Technical field
The present invention relates to a kind of preparation method being controlled the fast recovery diode of recovery characteristics by hydrogen injection technology, belong to fast recovery diode technical field.
Background technology
Recovery diode extensive use in various electronic equipment particularly Switching Power Supply, due to the improving constantly of operating frequency of Switching Power Supply, in order to reduce the turn-off power loss of diode itself, improve operational efficiency and the reliability of complete machine, require that diode has reverse recovery characteristic faster, namely in the short period of time, diode can from forward conduction recovering state to reverse blocking state.Therefore, diode is needed to have t reverse recovery time
rrshort, QRR Q
rrfew and maximum reverse recovery current I
rrmlow.For this reason, some fast recovery diodes are by realizing reverse recovery characteristic to the control method of minority carrier life time at present.By heavy metal doping way to the control method one of minority carrier life time, but because heavy metal doping mainly adopts gold, platinum and palladium etc., therefore also exist characteristic dispersed large, affect large problem by working temperature, there will be serious pressure drop negative temperature characteristic, because reverse recovery characteristic temperature influence is large, therefore high temperature and low-temperature characteristics differ greatly.Another kind is the mode adopting electron irradiation, but the penetrability of electron irradiation, the complex centre formed is constant distribution, for the switching characteristic of device, recovers hardness very large, a lot of soft recovery characteristics diode applications needed cannot use.Another carries out the few son in local by hydrogen ion implantation process mode and controls, but adulterate because adopting Hydrogen implantation and heavy metal and form locally minority carrier life time control area in conjunction with technology mode, can bring because device is under hot operation, it is large that heavy metal still has reverse recovery characteristic temperature influence, there is the defect that high temperature and low-temperature characteristics differ greatly equally.Especially when the metallic aluminium of front side of silicon wafer is formed, employ alloy technique, and the common control temperature of aluminium alloy technique is at 400 ~ 420 DEG C, at this temperature, room-oxygen the compound effective to the minority carrier life time formed after Hydrogen implantation annealing can disappear substantially completely, causes the few sub-controlled area effect in local greatly to reduce even invalid.
Summary of the invention
The object of this invention is to provide a kind of preparation method being controlled the fast recovery diode of recovery characteristics by hydrogen injection technology, adopt Hydrogen implantation and follow-up low temperature annealing process, form stable local defect region, the injection of active area to base and the life-span of minority carrier can be reduced.
The present invention is the technical scheme achieved the above object: a kind of preparation method being controlled the fast recovery diode of recovery characteristics by hydrogen injection technology, is characterized in that: to completing front operation and making on the silicon chip of front with protecting glue,
(1), at front side of silicon wafer by ion implantation mode by Hydrogen implantation in P type doped region, active area, energy during described Hydrogen implantation at 120KeV ~ 0.5MeV, implantation dosage at 1e13 ~ 5e15, the mean range formed during Hydrogen implantation, at 1.1 ~ 7um, produces microdefect district by clashing in the p type impurity district of silicon chip;
(2) after, being removed by front side of silicon wafer protecting glue, put into annealing furnace, under protective gas atmosphere, annealing in process is carried out at 270 ~ 345 DEG C, and annealing time is at 0.5 ~ 5h, to repair segmental defect district and to form microdefect region in the position of setting, form the complex centre that the formation of minority carrier life time is affected, for reducing the injection of active area to base and the life-span of minority carrier;
(3), at front side of silicon wafer adopt metal sputtering or evaporation, form the metal anode layer of ohmic contact through photoetching corrosion;
, silicon chip back side is thinning after, with evaporation or sputtering method make metal layer on back at silicon chip back side, formed metal cathode layer, complete the making of fast recovery diode.
Wherein: the energy of described Hydrogen implantation is at 160KeV ~ 0.35MeV, implantation dosage at 2e13 ~ 4e15, and the mean range formed during Hydrogen implantation is at 1.24 ~ 5um.
The energy of described Hydrogen implantation is at 160KeV ~ 0.25MeV, and implantation dosage is at 5e13 ~ 3e15, and the mean range formed during Hydrogen implantation is at 1.24 ~ 4um.
Temperature during described annealing in process at 280 ~ 330 DEG C, annealing time 1 ~ 3.5 hour.
The present invention is on the band glue silicon chip completing other front techniques except front metal, ion implantation mode is adopted from front, by Hydrogen implantation in P type doped region, active area, the hydrogen ion injected collides silicon atom in the p type impurity district of silicon chip, and by its generation defect area, position knocking-on for the latter, position due to collision occurs in the end of hydrogen ion track, and therefore regulable control can be carried out by the energy injecting ion in the position of formed defect.Silicon chip after removing photoresist is carried out process annealing by the present invention in annealing furnace under protective gas atmosphere; repair segmental defect district and make microdefect be stabilized in set position; form the complex centre that the formation of minority carrier life time is affected; the injection of active area to base and the life-span of minority carrier can be reduced, form the adjustment of local to carrier lifetime in the position determined.The present invention is by Hydrogen implantation and follow-up low temperature annealing process, and all adopt metal sputtering or evaporation at the front and back of silicon chip and form metal anode layer and metal cathode layer, the impact of formed defect area can not be caused, therefore formation local defect region can be stablized, avoid alloy operation high temperature to the impact of minority carrier life time controlled area, local, this defect area at normal working temperature, namely lower than stable under the condition of 345 DEG C, there will not be the situation that recovery characteristics is deteriorated with temperature rising adopting and occur in the fast recovery diode of heavy metal doping process, also solve the hard recovery problem because electron irradiation mode produces simultaneously.The present invention injects hydrionic mode from front side of silicon wafer and traditional radiation mode can reduce equipment requirement, adopts the injection board comparatively easily obtained to realize, reduces technique threshold, be convenient to suitability for industrialized production, process consistency and good stability, cost is low, is beneficial to and promotes aborning.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, embodiments of the invention are described in further detail.
The structural representation of Fig. 1 fast recovery diode of the present invention.
Wherein: 1-field oxide, 2-terminal polysilicon field plate layer, 3-metal anode layer, 4-P+ type impurity layer, 5-microdefect region, 6-N-type epitaxial loayer, 7-N+ type substrate layer, 8-metal cathode layer.
Embodiment
The present invention is controlled the preparation method of the fast recovery diode of recovery characteristics by hydrogen injection technology, to completing front operation and making on the silicon chip of front with protecting glue.And the front operation of fast recovery diode is common process, namely first oxidation processes is carried out to after the cleaning of silicon wafer process of N-type epitaxial loayer 6, field oxide 1 is formed at front side of silicon wafer, then at front side of silicon wafer through photoetching, erode away active area window, with ion implantor by P type ion implantation in active area, Implantation Energy is at 30 ~ 180kev, implantation dosage 1E13 ~ 1E14, silicon chip is positioned in high temperature dispersing furnace, propelling is carried out to p type impurity and forms P doped with source region and terminal P type field limiting ring, its junction depth can be controlled in 6 ~ 9um, by injecting and diffuseing to form P+ type impurity layer 4 in the active area window of field oxide 1, again at front side of silicon wafer depositing polysilicon, and p type impurity doping is carried out to polysilicon, photoetching and the polysilicon be etched with in the window of source region, and photoetching and the electrode hole etched in the window of active area and terminal polysilicon field plate layer 2, at the even resist coating of front side of silicon wafer, photoetching, development, for the protection of terminal polysilicon field plate layer 2, now complete the front operation of silicon chip.
Completing the front operation of silicon chip, carry out according to the following steps,
(1), at front side of silicon wafer by ion implantation mode by Hydrogen implantation in P type doped region, active area, energy during described Hydrogen implantation at 120KeV ~ 0.5MeV, implantation dosage at 1e13 ~ 5e15, the mean range formed during Hydrogen implantation is at 1.1 ~ 7um, microdefect district is produced by clashing in the p type impurity district of silicon chip, position due to collision occurs in the end of hydrogen ion track, and regulable control can be carried out by the energy injecting ion in the position therefore forming defect.The energy hole of Hydrogen implantation of the present invention is at 160KeV ~ 0.35MeV, implantation dosage at 2e13 ~ 4e15, and the mean range formed during Hydrogen implantation is at 1.24 ~ 5um; Preferably the energy of Hydrogen implantation is at 160KeV ~ 0.25MeV, and implantation dosage is at 5e13 ~ 3e15, and the mean range formed during Hydrogen implantation is at 1.24 ~ 4um, forms microdefect region with the position being formed in setting.
(2) after, being removed by front side of silicon wafer protecting glue, put into annealing furnace; under protective gas atmosphere; annealing in process is carried out at 270 ~ 345 DEG C; and annealing time is at 0.5 ~ 5h, adopt process annealing, segmental defect district can be repaired and form microdefect region 5 in the position of setting; form the complex centre that the formation of minority carrier life time is affected; for reducing the injection of active area to base and the life-span of minority carrier, temperature during annealing in process of the present invention is at 280 ~ 330 DEG C, and annealing time was at 1 ~ 3.5 hour.
(3), at front side of silicon wafer adopt metal sputtering or evaporation, Al can be sputtered at front side of silicon wafer, or evaporation Ti-Al or Ti-Ni-Al, the metal anode layer 3 of ohmic contact is formed through photoetching corrosion.
(4), after silicon chip back side is thinning, metal layer on back is made at silicon chip back side with evaporation or sputtering method, form metal cathode layer 8, silicon chip back side is thinned to desired thickness by available wafer lapping machine or sandblasting, by wafer thinning to 150 ~ 400 μm, metal cathode layer 8 is formed, finally obtained fast recovery diode at silicon chip back side evaporation Ti-Ni-Ag or V-Ni-Ag.
Adopt the obtained fast recovery diode of preparation method of the present invention as shown in Figure 1, the metal cathode layer 8 of fast recovery diode is connected successively with N+ type substrate layer 7 and N-type epitaxial loayer 6, N-type epitaxial loayer 6 top is connected with field oxide 1, termination environment outside the window of field oxide 1 active area is provided with terminal polysilicon field plate layer 2, by injecting and diffuseing to form P+ type impurity layer 4 in the active area window of field oxide 1, the process annealing of Hydrogen implantation and postorder is passed through from front side of silicon wafer, microdefect region 5 is formed in P+ type impurity layer 4, the microdefect region 5 formed does not enter PN junction space charge region, metal anode layer 3 is formed in electrode hole and is connected with P+ impurity layer and terminal polysilicon field plate layer in active area.
Adopt fast recovery diode of the present invention in forward conduction process, the trapped hole by the microdefect region of hydrogen ion formation, reduce the injection in hole, reduce at microdefect region minority carrier life time, but not the change of defect area minority carrier life time is little, defect area is controlled at the edge extended near space charge, do not enter space charge region, lead in reversely restoring process and recover to be accelerated in the forming process of space charge region, after space charge region is born and is punctured afterwards, few son in non-microdefect district is disappeared by compound, forms the tail currents required for soft recovery.The present invention is by Hydrogen implantation and follow-up low temperature annealing process, and all adopt metal sputtering or evaporation at the front and back of silicon chip and form metal anode layer and metal cathode layer, the impact of formed defect area can not be caused, and formation local defect region can be stablized, the injection of active area to base and the life-span of minority carrier can be reduced.
Claims (4)
1. controlled a preparation method for the fast recovery diode of recovery characteristics by hydrogen injection technology, it is characterized in that: to completing front operation and making on the silicon chip of front with protecting glue,
(1), at front side of silicon wafer by ion implantation mode by Hydrogen implantation in P type doped region, active area, energy during described Hydrogen implantation at 120KeV ~ 0.5MeV, implantation dosage at 1e13 ~ 5e15, the mean range formed during Hydrogen implantation, at 1.1 ~ 7um, produces microdefect district by clashing in the p type impurity district of silicon chip;
(2) after, being removed by front side of silicon wafer protecting glue, put into annealing furnace, under protective gas atmosphere, annealing in process is carried out at 270 ~ 345 DEG C, and annealing time is at 0.5 ~ 5h, to repair segmental defect district and to form microdefect region in the position of setting, form the complex centre that the formation of minority carrier life time is affected, for reducing the injection of active area to base and the life-span of minority carrier;
(3), at front side of silicon wafer adopt metal sputtering or evaporation, form the metal anode layer of ohmic contact through photoetching corrosion;
, silicon chip back side is thinning after, with evaporation or sputtering method make metal layer on back at silicon chip back side, formed metal cathode layer, complete the making of fast recovery diode.
2. the preparation method being controlled the fast recovery diode of recovery characteristics by hydrogen injection technology according to claim 1, it is characterized in that: the energy of described Hydrogen implantation is at 160KeV ~ 0.35MeV, implantation dosage at 2e13 ~ 4e15, and the mean range formed during Hydrogen implantation is at 1.24 ~ 5um.
3. the preparation method being controlled the fast recovery diode of recovery characteristics by hydrogen injection technology according to claim 2, it is characterized in that: the energy of described Hydrogen implantation is at 160KeV ~ 0.25MeV, implantation dosage is at 5e13 ~ 3e15, and the mean range formed during Hydrogen implantation is at 1.24 ~ 4um.
4. the preparation method of fast recovery diode being controlled recovery characteristics by hydrogen injection technology according to claim 1, is characterized in that: temperature during described annealing in process at 280 ~ 330 DEG C, annealing time 1 ~ 3.5 hour.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510957763.XA CN105405759A (en) | 2015-12-18 | 2015-12-18 | Fast recovery diode preparation method by controlling recovery characteristics through hydrogen injection process |
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| CN201510957763.XA CN105405759A (en) | 2015-12-18 | 2015-12-18 | Fast recovery diode preparation method by controlling recovery characteristics through hydrogen injection process |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762198A (en) * | 2014-12-18 | 2016-07-13 | 江苏宏微科技股份有限公司 | Groove type fast recovery diode and preparation method thereof |
| CN106876483A (en) * | 2017-01-23 | 2017-06-20 | 西安电子科技大学 | High-breakdown-voltage Schottky diode and preparation method |
| CN108831834A (en) * | 2018-06-22 | 2018-11-16 | 重庆平伟实业股份有限公司 | The forming method of power semiconductor |
| CN110660847A (en) * | 2018-06-28 | 2020-01-07 | 上海先进半导体制造股份有限公司 | Bipolar transistor and method for manufacturing the same |
| CN111463119A (en) * | 2020-03-11 | 2020-07-28 | 无锡格能微电子有限公司 | Heavy metal Au doping process |
| CN112397387A (en) * | 2019-08-16 | 2021-02-23 | 上海先进半导体制造股份有限公司 | Fast recovery diode and method of manufacturing the same |
| CN114023644A (en) * | 2021-10-29 | 2022-02-08 | 江苏索力德普半导体科技有限公司 | Fast recovery diode and preparation method thereof |
| CN115939185A (en) * | 2022-11-23 | 2023-04-07 | 扬州国宇电子有限公司 | Fast recovery diode chip and preparation method thereof |
| CN116454119A (en) * | 2023-06-15 | 2023-07-18 | 广东巨风半导体有限公司 | Fast recovery diode and preparation method thereof |
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| CN1471146A (en) * | 2003-06-18 | 2004-01-28 | 北京工业大学 | Method for manufacturnig silicon high-speed semiconductor switch device |
| US20070080407A1 (en) * | 2005-10-06 | 2007-04-12 | Sanken Electric Co., Ltd. | Insulated gate bipolar transistor |
| CN204243050U (en) * | 2014-12-05 | 2015-04-01 | 国家电网公司 | A kind of fast recovery diode |
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| CN1471146A (en) * | 2003-06-18 | 2004-01-28 | 北京工业大学 | Method for manufacturnig silicon high-speed semiconductor switch device |
| US20070080407A1 (en) * | 2005-10-06 | 2007-04-12 | Sanken Electric Co., Ltd. | Insulated gate bipolar transistor |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762198A (en) * | 2014-12-18 | 2016-07-13 | 江苏宏微科技股份有限公司 | Groove type fast recovery diode and preparation method thereof |
| CN106876483A (en) * | 2017-01-23 | 2017-06-20 | 西安电子科技大学 | High-breakdown-voltage Schottky diode and preparation method |
| CN106876483B (en) * | 2017-01-23 | 2019-10-11 | 西安电子科技大学 | High-breakdown-voltage Schottky diode and production method |
| CN108831834A (en) * | 2018-06-22 | 2018-11-16 | 重庆平伟实业股份有限公司 | The forming method of power semiconductor |
| CN110660847A (en) * | 2018-06-28 | 2020-01-07 | 上海先进半导体制造股份有限公司 | Bipolar transistor and method for manufacturing the same |
| CN110660847B (en) * | 2018-06-28 | 2022-04-12 | 上海先进半导体制造有限公司 | Bipolar transistor and method for manufacturing the same |
| CN112397387A (en) * | 2019-08-16 | 2021-02-23 | 上海先进半导体制造股份有限公司 | Fast recovery diode and method of manufacturing the same |
| CN111463119A (en) * | 2020-03-11 | 2020-07-28 | 无锡格能微电子有限公司 | Heavy metal Au doping process |
| CN114023644A (en) * | 2021-10-29 | 2022-02-08 | 江苏索力德普半导体科技有限公司 | Fast recovery diode and preparation method thereof |
| CN114023644B (en) * | 2021-10-29 | 2024-02-23 | 江苏索力德普半导体科技有限公司 | Fast recovery diode and preparation method thereof |
| CN115939185A (en) * | 2022-11-23 | 2023-04-07 | 扬州国宇电子有限公司 | Fast recovery diode chip and preparation method thereof |
| CN115939185B (en) * | 2022-11-23 | 2024-03-08 | 扬州国宇电子有限公司 | Fast recovery diode chip and preparation method thereof |
| CN116454119A (en) * | 2023-06-15 | 2023-07-18 | 广东巨风半导体有限公司 | Fast recovery diode and preparation method thereof |
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Application publication date: 20160316 |