CN106611797A - Power device with local metal service life control and manufacturing method thereof - Google Patents
Power device with local metal service life control and manufacturing method thereof Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 37
- 239000002184 metal Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 238000005224 laser annealing Methods 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 239000007787 solid Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 208000032750 Device leakage Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
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- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
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- Thyristors (AREA)
Abstract
The invention relates to a power device with local metal service life control and a manufacturing method thereof. The power device comprises a substrate and a PN junction together formed by P+ areas formed on the substrate; an oxide layer grows on a substrate N- layer; the P+ area is internally provided with a deep energy level doping layer; diffusion of deep energy level impurities totally depends on temperature, and the temperature decides the diffusion speed and the solid solubility in silicon. When thermal diffusion is carried out on the deep energy level impurities, one-side annealing, such as, laser annealing is adopted, the laser annealing local temperature is distributed in an axial range of a chip, and thus, limited depth knot pushing for the deep energy level impurities can be realized. The technical scheme provided by the invention can realize local metal service life control.
Description
Technical field
The present invention relates to a kind of power device and preparation method thereof, and in particular to a kind of power device with local metal life control
Part and preparation method thereof.
Background technology
With the development of Power Electronic Technique, various frequency changer circuits, the application of chopper circuit constantly expand, these power electronics electricity
The IGCT of the employing commutation cutoff that the loop in road has, some employings have the novel power transistor of self-switching-off capability, this
Two kinds of devices are required for a fast recovery diode in parallel therewith.The process conditions of early stage require to be introduced into few in being combined
The heart carries out semiconductor device manufacture, but so the device of manufacture has slower switching speed, it is difficult to meet the need to frequency applications
Ask.In order to meet power electronic system to high frequency performance requirement, either switching tube, or the diode of afterflow, it is required for
Complex centre is introduced into lattice with controlled method, minority carrier life time is reduced, the switching speed of device is improved.If had more to device
The requirement of high frequency, then need to introduce more complex centres while being optimized in structure.
Complex centre is introduced in the devices, generally adopts two ways at present.The first is that the impurity that deep energy level is presented in silicon is entered
Row thermal diffusion；Second is that, by high-energy particle bombardment silicon crystal, the lattice that hole and interstitial atom form are produced in crystal is damaged
Wound.The first generally adopts heavy metal gold or platinum, due to its diffusion velocity it is fast, it is impossible to precise control depth, therefore for the global longevity
Life control mode.The second way is usually electron irradiation, hydrogen injection or helium injection.Electron irradiation usually runs through mode, i.e.,
Complex centre distribution in the devices is constant, therefore is still global life control.Hydrogen injects and helium injection can be by control
Implantation Energy processed realizes that limited depth injects, and realizes life control, i.e., the Localized Lifetime Control generally said, office in most effective region
Domain lifetime control techniques are the conventional life control modes of high side device.
Global life control mode is typically unfavorable to the switching characteristic of device, is unfavorable for improving the compromise characteristic of device, at present
Deep energy level heavy metal doping way because implementation method be limited, fail to realize Localized Lifetime Control, be commonly used to low side device.
And existing Localized Lifetime Control means depend on the high ion implantation device of price, higher processing cost is generally meant that, it is existing
Stage energetic ion injection device is both needed to from external import.See from the market, it is rare to adopt Localized Lifetime control less than 1200V devices
Mode processed, high cost are main causes.Additionally need and be concerned with, no matter the complex centre which kind of mode is introduced, during which is compound
The heart and produces center if located in space-charge region in reverse bias operation, near forbidden band central authorities level of energy
Complex centre, then mean bigger reverse leakage.Now, gold, hydrogen and helium are unfavorable, and platinum is optimum.Because mixing platinum
Complex centre has most obvious low drain electrical dominance away from forbidden band centre position, in all life control modes, so platinum device has
Beneficial to higher junction temperature limit is obtained, higher voltage is applied to.It should be noted that for fast recovery diode, complex centre away from
From PN junction more close to, be more conducive to compromise characteristic raising, therefore, under identical levels of leakage, if using the side of local platinum
Formula carries out life control, and platinum can be entered in space-charge region, and its compromise characteristic can be better than the core using hydrogen or helium Localized Lifetime Control
Piece.
The content of the invention
To solve above-mentioned deficiency of the prior art, it is an object of the invention to provide a kind of power with local metal life control
Device and preparation method thereof, realizes metal Localized Lifetime Control.
The purpose of the present invention is realized using following technical proposals：
The present invention provides a kind of power device with local metal life control, and the power device includes substrate and formed thereon
The PN junction that collectively forms of P+ areas, the growth on the substrate N- layers has oxide layer；Which thes improvement is that, in P+ areas
It is provided with deep energy level doped layer；
N-type silicon substrate of the substrate for Uniform Doped, the N-type silicon substrate include the substrate N- layers being sequentially distributed and lining
Bottom N+ layers；
Further, the impurity that the deep energy level doped layer is mixed is gold or platinum, and its dosage is 1 × 1012cm-2～1 × 1016cm-2。
Further, the oxide layer forms active area window, and on the active area window, knot forms P+ areas.
Further, the deep energy level doped layer is distributed in power device axial range, for realizing power device local metal
Life control.
The present invention also provides a kind of manufacture method of the power device with local metal life control, and which thes improvement is that, institute
The method of stating comprises the steps：
A, initial oxidation：In H2And O2Atmosphere, at 900 DEG C -1100 DEG C, the N-type silicon substrate to the Uniform Doped after cleaning
Oxidation 1-10 hours, in 8000-20000 angstrom of oxide layer of its superficial growth；
B, formation active area：In the N-type silicon substrate of Uniform Doped gluing, expose, develop, etch and remove photoresist to forming active
Area's window；
C, formation PN junction：300-500 angstrom of oxide layer is grown on active area window as masking layer, dosage is subsequently carried out for 1
×1013cm-2～1 × 1015cm-2Boron ion injection, form boron ion implanted layer, and the knot shape under 1200 DEG C, nitrogen atmosphere
Into the P+ areas of 1-20um；
D, enter dense boron in surfaces of active regions after-teeming：20-50 kiloelectron-volt of energy, implantation dosage 1e13cm-2～1e15cm-2,
At 900 DEG C, constant temperature is annealed into line activating for 1 hour；
E, minority carrier life time control is carried out, realizes that deep-level impurity is combined with N-type silicon substrate using deposit, evaporation or injection mode,
Limited depth deep-level impurity knot is realized using one side annealing way, deep energy level doped layer is formed；
F, generation metal electrode：P areas surface using evaporation or splash-proofing sputtering metal aluminum, photoetching, etch, removing photoresist forms with alloy
Surface metal electrode；
G, surface passivation：By SiN, SiO2, polyimides PI thin film forms surface passivation, and by photoetching, etching is formed
Emitter stage aluminum lead PAD region；
H, back metal；Routinely technique forms back metal, forms Al/Ti/Ni/Ag or Ti/Ni/Ag back metal electrodes.
Further, in step E, one side annealing way includes laser annealing mode and electron beam annealing mode.
The excellent effect that has of technical scheme that the present invention is provided is：
1. deep-level impurity Localized Lifetime Control is realized using one side annealing, processing cost is reduced compared with energetic ion injects,
Product can realize on low-voltage-grade, enhance product performance, it is to avoid equipment dependence；
2. life control means are enriched, can be applied on gated device, local doping can avoid the reliability for affecting grid oxygen；
3. the Localized Lifetime Control means realization of the platinum of Low dark curient, on the basis of more excellent compromise characteristic, advantageously reduces device leakage
Electricity, improves device working junction temperature；
4. low-voltage-grade devices field, the Localized Lifetime Control means of gold, can continue to improve gold doping device compromise characteristic, realize
Device performance is more excellent, and the knot severity control of gold is applied also for high pressure field outside space-charge region such as；
5. largely or entirely without deep-level impurity, what is reduced for carrier capture coefficient is raised with temperature answers device for drift region
Conjunction center, can optimize its forward voltage drop temperature coefficient, beneficial to parallel connection；
6. by adjusting optical maser wavelength, life control depth can be adjusted flexibly, technique difficulty of processing is low.
Description of the drawings
Fig. 1 is the substrate N- layers that the present invention is provided；
Fig. 2 is the N- material piece field oxides that the present invention is provided；
Fig. 3 is the material piece for providing chip profile figure after active area chemical wet etching of the invention；
Fig. 4 is that the material piece active area for providing of the invention knot after B injections forms P+ areas；
Fig. 5 is that the material piece that the present invention is provided has local metal life control chip profile figure one；
Fig. 6 is that the material piece that the present invention is provided has local metal life control chip profile figure two；
Wherein：1. substrate N- layers are represented；2. oxide layer is represented；3. P+ layers are represented；4. deep energy level doped layer is represented.
Specific embodiment
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is described in further detail.
The following description and drawings fully illustrate specific embodiments of the present invention, to enable those skilled in the art to put into practice it
.Other embodiments can include structure, logic, electric, process and other changes.Embodiment only generation
The possible change of table.Unless explicitly requested, otherwise individually component and function are optional, and the order for operating can change.
The part of some embodiments and feature can be included in or replace part and the feature of other embodiments.The enforcement of the present invention
The scope of scheme includes the gamut of claims, and all obtainable equivalent of claims.Herein,
These embodiments of the present invention individually or generally can be represented with term " invention " that it is convenient that this is used for the purpose of, and
And if in fact disclosing the invention more than, the scope for being not meant to automatically limit the application is any single invention or sends out
Bright design.
The technical problem to be solved in the present invention is that：For the technical problem that prior art is present, the present invention proposes a kind of new
Method, so as to realize metal Localized Lifetime Control.
To solve above-mentioned technical problem, the present invention is employed the following technical solutions：
The present invention provides a kind of power device with local metal life control, and the power device includes substrate and formed thereon
The PN junction that collectively forms of P+ areas, the growth on the substrate N- layers has oxide layer；Deep energy level doped layer is provided with P+ areas；
N-type silicon substrate of the substrate for Uniform Doped, the N-type silicon substrate include the substrate N- layers being sequentially distributed and lining
Bottom N+ layers.
The diffusion of deep-level impurity places one's entire reliance upon temperature, and temperature determines its diffusion velocity and the solid solubility in silicon.To deep energy
When level impurity carries out thermal diffusion, annealed using one side, such as laser annealing mode is carried out, using the local Temperature Distribution of laser annealing
The limited depth knot of deep-level impurity is realized in chip axial range, thus, you can realize device local metal life control.
The impurity that the deep energy level doped layer is mixed is gold or platinum, and its dosage is 1 × 1012cm-2～1 × 1016cm-2.The oxide layer is formed
Active area window, on the active area window, knot forms P+ areas.The deep energy level doped layer is distributed in power device axial direction model
In enclosing, for realizing power device local metal life control.
The present invention also provides a kind of manufacture method of the power device with local metal life control, comprises the steps：
1. initial oxidation：After cleaning to the N-type silicon substrate (see figure 1) of Uniform Doped, using the side of high-temperature oxydation
Method, silicon chip surface grow oxide layer 2, thickness 8000-20000A, as shown in Figure 2；
2. active area is formed：By gluing, expose, development, etching is removed photoresist, and forms active area window as shown in Figure 3；
3. PN junction is formed：To prevent implant damage, growth 300-500A oxide layers from subsequently carrying out boron injection as masking layer,
Dosage is 1e13-1e15, knot 1-20um under 1200 DEG C of nitrogen, sees Fig. 4；
4. to prevent, active area concentration is too low to there is Ohmic contact problem, and surface is mended dense boron and activated；
5. minority carrier life time control is carried out, realizes that deep-level impurity is combined with silicon using deposit, evaporation or injection mode, using laser
Annealing way realizes limited depth deep-level impurity knot, sees Fig. 5 or Fig. 6；
6. metal electrode：Usual manner evaporates or sputters AL, by photoetching, etches, removes photoresist, and alloy forms surface metal
Deposit；
7. surface passivation：Surface passivation is formed by conventional methods；
8. back metal：Routinely technique forms back metal, forms Al/Ti/Ni/Ag or Ti/Ni/Ag back metal electrodes.
The annealing way that the present invention is provided is annealed for one side, is explained merely with laser annealing herein, other achievable lists
The mode of face annealing is also included, such as electron beam etc.；The present invention mainly by fast recovery diode FRD flow processs illustrating, but
Method is equally applicable to the power device that other need Localized Lifetime Control；According to device application and parameter request, deep-level impurity
Gold or platinum are not limited only to, other elements, such as palladium etc. can be also included.Actual deep energy level complex centre depth is according to device parameters need
Ask, there may be two kinds of forms of Fig. 5 and Fig. 6.
Above example is only to illustrate technical scheme rather than a limitation, although reference above-described embodiment is to the present invention
Be described in detail, those of ordinary skill in the art still can to the present invention specific embodiment modify or
Person's equivalent, these any modification or equivalents without departing from spirit and scope of the invention are applying for pending this
Within bright claims.
Claims (7)
1. a kind of power device with local metal life control, the power device include the PN junction that substrate and the P+ areas for being formed thereon collectively form, and the growth on the substrate N- layers has oxide layer；Characterized in that, being provided with deep energy level doped layer in P+ areas；
N-type silicon substrate of the substrate for Uniform Doped, the N-type silicon substrate include the substrate N- layers being sequentially distributed and substrate N+ layers.
2. power device as claimed in claim 1, it is characterised in that the impurity that the deep energy level doped layer is mixed is gold or platinum, its dosage is 1 × 1012cm-2～1 × 1016cm-2。
3. power device as claimed in claim 2, it is characterised in that the impurity that the deep energy level doped layer is mixed is palladium, and its dosage is 1 × 1012cm-2～1 × 1016cm-2。
4. power device as claimed in claim 1, it is characterised in that the oxide layer forms active area window, on the active area window, knot forms P+ areas.
5. power device as claimed in claim 1, it is characterised in that the deep energy level doped layer is distributed in power device axial range, for realizing power device local metal life control.
6. a kind of manufacture method of the power device with local metal life control as any one of claim 1-5, it is characterised in that methods described comprises the steps：
A, initial oxidation：In H2And O2Atmosphere, at 900 DEG C -1100 DEG C, the N-type silicon substrate oxidation 1-10 hours to the Uniform Doped after cleaning, in 8000-20000 angstrom of oxide layer of its superficial growth；
B, formation active area：In the N-type silicon substrate of Uniform Doped gluing, expose, develop, etch and remove photoresist to forming active area window；
C, formation PN junction：300-500 angstrom of oxide layer is grown on active area window as masking layer, dosage is subsequently carried out for 1 × 1013cm-2～1 × 1015cm-2Boron ion injection, formed boron ion implanted layer, and under 1200 DEG C, nitrogen atmosphere knot formed 1-20um P+ areas；
D, enter dense boron in surfaces of active regions after-teeming：20-50 kiloelectron-volt of energy, implantation dosage 1e13cm-2～1e15cm-2, at 900 DEG C, constant temperature is annealed into line activating for 1 hour；
E, minority carrier life time control is carried out, realize that deep-level impurity is combined with N-type silicon substrate using deposit, evaporation or injection mode, limited depth deep-level impurity knot, formation deep energy level doped layer are realized using one side annealing way；
F, generation metal electrode：P areas surface using evaporation or splash-proofing sputtering metal aluminum, photoetching, etch, remove photoresist and alloy formed surface metal electrode；
G, surface passivation：By SiN, SiO2, polyimides PI thin film forms surface passivation, and by photoetching, etching forms emitter stage aluminum lead PAD region；
H, back metal；Routinely technique forms back metal, forms Al/Ti/Ni/Ag or Ti/Ni/Ag back metal electrodes.
7. manufacture method as claimed in claim 6, it is characterised in that in step E, one side annealing way includes laser annealing mode and electron beam annealing mode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510695743.XA CN106611797A (en) | 2015-10-23 | 2015-10-23 | Power device with local metal service life control and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510695743.XA CN106611797A (en) | 2015-10-23 | 2015-10-23 | Power device with local metal service life control and manufacturing method thereof |
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| CN111106012A (en) * | 2019-12-20 | 2020-05-05 | 电子科技大学 | Method for realizing local service life control of semiconductor device |
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