CN109216472A - fast recovery diode and preparation method thereof - Google Patents
fast recovery diode and preparation method thereof Download PDFInfo
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- 238000011084 recovery Methods 0.000 title claims abstract description 96
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 150000002500 ions Chemical class 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims description 15
- -1 helium ion Chemical class 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 9
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
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- 230000000903 blocking effect Effects 0.000 abstract description 26
- 230000005684 electric field Effects 0.000 abstract description 16
- 238000000926 separation method Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 94
- 238000000137 annealing Methods 0.000 description 16
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 230000006798 recombination Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
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- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
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- 238000010835 comparative analysis Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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Abstract
The present invention relates to technical field of semiconductors, a kind of fast recovery diode and preparation method thereof is provided, wherein fast recovery diode includes: the substrate of the first conduction type；The semiconductor layer of second conduction type is formed on substrate, and the second conduction type is opposite with the first conduction type；Doped layer is formed in substrate and identical as the conduction type of substrate, and doped layer and is annealed with predetermined temperature by injecting Doped ions to substrate, and predetermined temperature is less than 500 DEG C.The doped layer has both service life blocking and the effect of life control simultaneously, under reverse blocking state, doped layer can reduce below that space-charge region entirety electric field strength is (i.e., doped layer, space charge region between the cathode of fast recovery diode), reduce the separation energy of electron hole pair, to reduce the leakage current under diode reverse blocking state, reduces the loss of the rated reverse voltage of fast recovery diode.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of fast recovery diode and preparation method thereof.
Background technique
Power fast recovery diode is a kind of two-terminal device with unilateal conduction, almost in all electronic circuits,
Semiconductor fast recovery diode will be used, it plays an important role in many circuit power devices.Wherein, fast to restore
Diode (Fast Recovery Diode, referred to as FRD) is due to good switching characteristic and shorter Reverse recovery
Time, therefore it is widely used in every field, structure is as shown in Figure 1.Specifically include: P-type semiconductor, N-type semiconductor and
The area intrinsic semiconductor i is increased among p-type, N-type silicon materials, constitutes P-i-N silicon wafer.Wherein: preparing the area intrinsic semiconductor i
Method is mainly the area N- by forming a low concentration in P-type layer and N-type layer, so that the area N- can compared to p type island region and N-type region
It is the area intrinsic semiconductor i to be approximately considered.The working condition of fast recovery diode is generally divided into forward conduction and reversed cut-off,
In, under forward conduction state, since there are conductance modulations for base area, thus the on-state power of diode is very low, can achieve very
High rated current and rated power；Under reverse blocking state, it is necessary to be completely drawn out and that when compound conducting accumulates is a large amount of few
Number carrier, since recombination process is longer, prevent device is from turning off rapidly.That is, the concentration of the minority carrier of injection is higher,
On-state voltage drop, the on-state loss of diode are smaller, but switch time, switching loss are bigger.
Therefore, in the prior art in order to compromise between forward conduction loss and reversed turn-off time, generally in two poles
Local lifetime control area is formed inside pipe, to diode inside introduce spatial distribution complex centre appropriate to control minority carrier
The service life of son optimizes the purpose of diode behavior parameter to reach optimization Carrier Profile.Specifically, it is spread using heavy metal
Technique forms Local lifetime control area in conjunction with the annealing temperature (500 DEG C or more) of higher temperature.
However, inventor's discovery when making a concrete analysis of by taking fast recovery diode as an example has under reverse blocking state
The area low-doped drift region N- undertakes most of electric field in source region, and a large amount of electron hole pairs separate under the action of electric field, electricity
Son is mobile to N+ high potential, forms electronic current, and hole is mobile to P+ low potential, forms hole current, and the two adduction is as anti-
To leakage current.Particularly, since in the drift region N-, there are carrier lifetime control layers, the defect of initiation life control layer can be anti-
To under electric field action, more electrons and holes are generated, reverse leakage current can further increase, and cause under reverse blocking state
Loss increases.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of fast recovery diode and preparation method thereof, it is existing fast to solve
Recovery diode big problem of leakage current under reverse blocking state.
First aspect present invention provides a kind of fast recovery diode, comprising:
The substrate of first conduction type；
The semiconductor layer of second conduction type is formed over the substrate, and second conduction type is led with described first
Electric type is opposite；
Doped layer is formed in the substrate and identical as the conduction type of the substrate；The doped layer be pass through to
The substrate injects Doped ions, and annealed with predetermined temperature, the predetermined temperature is less than 500 DEG C.
Optionally, the predetermined temperature is 200-400 DEG C.
Optionally, the doping concentration of the semiconductor layer is 1E15cm-3-1E19cm-3。
Optionally, further includes:
First electrode is formed in side of the substrate far from the semiconductor layer；
Second electrode is formed in side of the semiconductor layer far from the substrate.
Optionally, the Doped ions are one of hydrogen ion, helium ion or phosphonium ion.
Second aspect of the present invention additionally provides a kind of preparation method of fast recovery diode, comprising:
The substrate for having the first conduction type is provided；
The semiconductor layer of the second conduction type, second conduction type and first conduction are formed over the substrate
Type is opposite；
Doped ions are injected to the substrate；
It is annealed, is formed identical with the substrate conduction type to the substrate after ion implanting with predetermined temperature
Doped layer；Wherein, the predetermined temperature is less than 500 DEG C.
Optionally, the predetermined temperature is 200-400 DEG C.
Optionally, the implantation dosage of the Doped ions is 1E5~1E20cm-2。
Optionally, the semiconductor layer for forming the second conduction type over the substrate, comprising:
With 1E13cm-2-1E15cm-2Implantation dosage to the substrate inject the second conduction type Doped ions.
Optionally, further includes:
First electrode layer is formed far from the side of the semiconductor layer in the substrate；
The second electrode lay is formed far from the side of the substrate in the semiconductor layer.
Technical solution of the present invention has the advantages that
1. fast recovery diode provided in an embodiment of the present invention, fast extensive to adjust by forming doped layer in substrate
Field distribution inside multiple diode under reverse blocking state, reduces the electric field strength of doped regions.Wherein, the doped layer is same
When have both the service life stop and life control effect, specifically, fast recovery diode is under reverse blocking state, doped layer energy
It is enough reduce below space-charge region entirety electric field strength (that is, the space electricity between doped layer, and the cathode of fast recovery diode
Lotus region), reduce the separation energy of electron hole pair, to reduce electric leakage of the fast recovery diode under reverse blocking state
Stream, reduces the loss of the rated reverse voltage of fast recovery diode；In addition, the defect of doped layer provide it is indirect in forbidden band
Combination level reduces energy required for electron-hole recombinations, to improve electron-hole recombination rate, reduces the carrier longevity
Life, can be improved the whole carrier lifetime of fast recovery diode, reach the mesh for reducing fast recovery diode forward conduction voltage drop
, reduce the loss under forward current rating.
2. fast recovery diode provided in an embodiment of the present invention is 200-400 DEG C using predetermined temperature and anneals, with
To doped layer；Under forward conduction state, which can reduce forward conduction voltage；In reverse blocking state
Under, it can reduce reverse leakage current, reduce the overall losses of fast recovery diode.
3. the preparation method of fast recovery diode provided in an embodiment of the present invention, by being lower than 500 DEG C of predetermined temperature
It anneals to the substrate after ion implanting, to form doped layer in substrate；Pass through ion implanting and is once lower than
500 DEG C of annealing process can form doped layer in substrate, simplify preparation process；The doped layer has both service life resistance simultaneously
The function of gear and life control, specifically, under reverse blocking state, doped layer can reduce below fast recovery diode
Space-charge region entirety electric field strength (that is, space charge region between doped layer, and the cathode of fast recovery diode) is reduced
The separation energy of electron hole pair reduces fast to reduce leakage current of the fast recovery diode under reverse blocking state
The loss of the rated reverse voltage of recovery diode；In addition, the defect of doped layer provides the indirect combination level in forbidden band, drop
Energy required for low electron-hole recombinations reduces carrier lifetime, can be improved to improve electron-hole recombination rate
The whole carrier lifetime of fast recovery diode achievees the purpose that reduce fast recovery diode forward conduction voltage drop, reduces volume
Determine the loss under forward current.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the structure and dopant profiles schematic diagram of fast recovery diode；
Fig. 2 is the structural schematic diagram of fast recovery diode in the embodiment of the present invention；
Fig. 3 is the reversed electric field distribution schematic diagram of fast recovery diode in the embodiment of the present invention；
Fig. 4 is the schematic diagram of the reverse leakage current of fast recovery diode in the embodiment of the present invention；
Fig. 5 is the schematic diagram of the forward conduction voltage drop of fast recovery diode in the embodiment of the present invention；
Fig. 6 is the structural schematic diagram of fast recovery diode in the embodiment of the present invention；
Fig. 7 is the preparation technology flow chart of fast recovery diode in the embodiment of the present invention；
Fig. 8 a-8f is the structure chart of fast recovery diode in the embodiment of the present invention；
Appended drawing reference: 1- substrate；The doped regions 11-；The high-doped zone 12-；2- semiconductor layer；3- doped layer；The first electricity of 4-
Pole；5- second electrode.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " first ", " second ", " third " are used for description purposes only,
It is not understood to indicate or imply relative importance.
As long as in addition, the non-structure each other of technical characteristic involved in invention described below different embodiments
It can be combined with each other at conflict.
The embodiment of the present invention provides a kind of fast recovery diode, as shown in Fig. 2, including the substrate 1 of the first conduction type, shape
At least one layer of doped layer 3 is formed at the semiconductor layer 2 of the second conduction type on substrate 1 and in substrate 1.Wherein,
First conduction type is opposite with the second conduction type.For example, the first conduction type is p-type, the second conduction type is N-type；Or, the
One conduction type is N-type, and the second conduction type is p-type.In the present embodiment, using the first conduction type as N-type, the second conductive-type
Type be p-type for, be described in detail.That is, substrate 1 is N-type substrate in the present embodiment, semiconductor layer 2 is p-type.
Specifically, doped layer 3 is identical as the conduction type of substrate 1, doped layer 3 be by substrate 1 inject Doped ions,
And annealed with predetermined temperature.Wherein, predetermined temperature is less than 500 DEG C.By being lower than 500 DEG C of annealing temperature, so that note
Enter Doped ions and be formed by the function that functional layer is provided simultaneously with service life blocking and life control, the functional layer is to mix
Diamicton 3.
Optionally, Doped ions can be one of hydrogen ion, helium ion, phosphonium ion or silver ion；It may be it
Light ion or heavy ion of his type etc..
By forming doped layer 3 on substrate 1, to adjust the electric field inside fast recovery diode under reverse blocking state
Distribution, reduces the electric field strength of substrate.Wherein, which has both service life blocking and the effect of life control, tool simultaneously
Body, as shown in figure 3, fast recovery diode, under reverse blocking state, doped layer 3 can draw the electric field strength at PN junction
Height, thus reduce below space-charge region entirety electric field strength (that is, doped layer 3, between the cathode of fast recovery diode
Space charge region), reduce the separation energy of electron hole pair, to reduce the electric leakage under diode reverse blocking state
Stream, reduces the loss of the rated reverse voltage of fast recovery diode；In addition, between the defect of doped layer 3 provides in forbidden band
Combination level is connect, energy required for electron-hole recombinations is reduced, to improve electron-hole recombination rate, reduces carrier
The whole carrier lifetime of fast recovery diode can be improved in service life, and reaching reduces fast recovery diode forward conduction voltage drop
Purpose reduces the loss under forward current rating.
Optionally, the doping concentration of semiconductor layer 2 is 1E15cm-3-1E19cm-3。
In some optional embodiments of the present embodiment, the predetermined temperature of annealing is 200-400 DEG C.Inventor respectively with
200 DEG C, 250 DEG C, 300 DEG C, 400 DEG C, 550 DEG C are annealed, and obtain different fast recovery diodes, and to each fast recovery two
Reverse leakage current and reverse BV and forward conduction electric current and the forward conduction voltage of pole pipe are tested, and are obtained
Test data is as shown in Figure 4 and 5.
Fig. 4 is shown between the reverse leakage current and reverse BV of the corresponding fast recovery diode of different annealing temperature
Relationship, wherein a2, b2, c2 and d2 correspond respectively to 400 DEG C, 300 DEG C, 250 DEG C and 200 DEG C annealing obtain it is fast
The test data of recovery diode, e2 correspond to the test for the fast recovery diode that 500 DEG C conventional or more annealing process obtains
Data.Test data as shown in Figure 4 is it is found that the fast recovery diode that is obtained with 200-400 DEG C of annealing temperature and conventional fast
Recovery diode is compared, and has lower leakage current, i.e., the fast recovery diode energy in the present embodiment under reverse blocking state
Enough reduce loss of the fast recovery diode under the leakage current and rated reverse voltage under reverse blocking state.
Fig. 5 show the corresponding fast recovery diode of different annealing temperature forward conduction electric current and forward conduction voltage it
Between relationship, wherein a1-d1 corresponds respectively to 400 DEG C, 300 DEG C, 250 DEG C and 200 DEG C obtained two poles of fast recovery of annealing
The test data of pipe, e1 correspond to the test data for the fast recovery diode that 500 DEG C conventional or more annealing process obtains.By scheming
Test data shown in 5 is it is found that the fast recovery diode and conventional fast recovery diode obtained with 200-400 DEG C of annealing temperature
It compares, there is lower leakage current under forward conduction state, i.e. fast recovery diode in the present embodiment can reduce fast extensive
Multiple diode is in the pressure drop under forward conduction state and the loss under forward current rating.Specifically, with same voltage class
Conventional fast recovery diode is compared, and the reverse leakage current of the fast recovery diode in the present embodiment reduces by 90% or more, whole damage
Consumption reduces by 70% or more.
In addition, as shown in fig. 6, the doped regions 11 of the substrate 1 of fast recovery diode including the first conduction type and the
The high-doped zone 12 of one conduction type, for example, N-Area and N+Area.Wherein, doped layer 3 is formed in doped regions 11, due to
In all active areas, the doped regions 11 of the first conduction type undertake most of electric field, therefore, doped layer are formed in low-doped
In area 11, the field distribution of the fast recovery diode under reverse blocking state can be adjusted, reduces entire doped regions 11
Electric field strength, reduces the separation energy of electron hole pair, to reduce electric leakage of the fast recovery diode under reverse blocking state
Stream.Specifically, compared with conventional fast recovery diode, the forward conduction voltage drop of the fast recovery diode in the present embodiment is reduced
38%.
Further, as shown in fig. 6, fast recovery diode further includes being formed in side of the substrate 1 far from semiconductor layer 2
First electrode 4, and it is formed in the second electrode 5 of side of the semiconductor layer 2 far from substrate 1.Wherein, first electrode 4 can be used
Make the cathode of fast recovery diode, accordingly second electrode 5 may be used as the anode of fast recovery diode.
In some optional embodiments of the present embodiment, the quantity of doped layer 3 can be according to the reality of fast recovery diode
Border demand is formed in any position of doped regions 11, and quantity can not be unique.
Optionally, carrier lifetime and doping concentration can be same according to the controlling extent of carrier lifetime in doped layer 3
Shi Jinhang regulation, to meet purpose actually required.In addition, the injection depth of doped layer 3 can be set according to the actual situation
It sets, only need to guarantee to be formed with doped layer 3 in doped regions 11.
The embodiment of the invention also provides a kind of preparation methods of fast recovery diode, as shown in fig. 7, the preparation method packet
It includes:
S10 provides the substrate with the first conduction type.
As shown in Figure 8 a, the first conduction type can be N-type, or p-type.In the present embodiment, by taking N-type as an example, into
Row detailed description.For example, can be using N-type silicon as substrate.
The semiconductor layer of the second conduction type, the second conduction type and the first conduction type phase is formed on the substrate in S20
Instead.
As shown in Figure 8 b, the second conduction type can be p-type, or N-type is described in detail by taking p-type as an example.Example
Such as, boron ion can be injected on substrate 1, form boron ion implanted layer, which is semiconductor layer 2.
S30 injects Doped ions to substrate.
After forming semiconductor layer 2, Doped ions are injected to substrate 1.Wherein, Doped ions can be hydrogen ion, helium
One of ion, phosphonium ion or silver ion.
S40 anneals to the substrate after ion implanting with predetermined temperature, forms doping identical with substrate conduction type
Layer；Wherein, predetermined temperature is less than 500 DEG C.
To the substrate after injection Doped ions, annealed with the temperature lower than 500 DEG C, to form doped layer 3, such as
Shown in Fig. 8 c.The function that the doped layer 3 has both life control simultaneously and the service life stops, wherein life control can regulate and control to carry
It flows sub- life span, including intrinsic carrier lifetime and lower, while substrate concentration and higher can be regulated and controled.
In the present embodiment, by annealing in the predetermined temperature lower than 500 DEG C to the substrate after ion implanting, thus
Doped layer 3 is formed in substrate；I.e. by ion implanting and the primary annealing process for being lower than 500 DEG C, can be formed in substrate
Doped layer 3, simplifies preparation process；The doped layer 3 has both the function of service life blocking and life control simultaneously, specifically, fastly
Recovery diode under reverse blocking state, doped layer 3 can reduce below space-charge region entirety electric field strength (that is, mixing
Space charge region between diamicton, and the cathode of fast recovery diode), reduce the separation energy of electron hole pair, thus
The leakage current under diode reverse blocking state is reduced, the loss of the rated reverse voltage of fast recovery diode is reduced；In addition,
The defect of doped layer 3 provides the indirect combination level in forbidden band, reduces energy required for electron-hole recombinations, to mention
High electron-hole recombination rate, reduces carrier lifetime, the whole carrier lifetime of fast recovery diode can be improved, reach drop
The purpose of low fast recovery diode forward conduction voltage drop, reduces the loss under forward current rating.
In some optional embodiments of the present embodiment, the predetermined temperature of annealing process is 200-400 DEG C.Wherein, it closes
Predetermined annealing temperature in this present embodiment be formed by fast recovery diode performance parameter and 500 DEG C of temperature institutes annealed above
The comparative analysis of the performance parameter of the fast recovery diode of formation, referring to figure 4. and the associated description of embodiment illustrated in fig. 5,
Details are not described herein.
Optionally, the implantation dosage of Doped ions is 1E5~1E20cm-2.Wherein, the Implantation Energy of Doped ions and doping
The injection depth of ion is related, and injection depth is deeper, and the Implantation Energy of Doped ions is bigger；Conversely, the injection energy of Doped ions
It measures smaller；It only needs to guarantee to be formed as doped layer 3 in substrate 1.
Further, the depth and quantity of doped layer 3 formed in substrate 1, can be according to fast recovery diode
Actual demand is specifically arranged.
Optionally, the method for forming doped layer 3 includes but is not limited to light ion injection technique, Heavy Ion Implantation technology etc..
In some optional embodiments of the present embodiment, the semiconductor of the second conduction type is formed on the substrate in S20
Layer, comprising: with 1E13cm-2-1E15cm-2Implantation dosage to the substrate inject the second conduction type Doped ions.Specifically
Include:
S21 grows ion mask layer on a surface of the substrate.
Wherein it is possible in N-type silicon substrate Surface Creation oxide layer, the Doped ions injection as the second conduction type from
Sub- mask layer.
S22 patterns ion mask layer, to form ion implantation window.
S23 carries out the injection of the Doped ions of the second conduction type, using ion implantation window to form semiconductor layer.
Specifically, the injection of boron ion is carried out, to N-type silicon substrate by ion implantation window to form boron ion injection
Layer.Wherein, the implantation dosage of boron ion is 1E13cm-2-1E15cm-2, then the knot formation heavy doping under 1200 DEG C of nitrogen atmospheres
P type semiconductor layer 2, the P-type anode region of the p type semiconductor layer 2 as fast recovery diode.Optionally, 2 knot of p type semiconductor layer
Deep is 5 μm to 25 μm at the top of N-type substrate 1, and the doping concentration of p type semiconductor layer 2 is 1E15cm-3-1E19cm-3。
Further, before S30, further includes: form the n type semiconductor layer of high-dopant concentration on another surface of substrate 1
12, so that substrate 1 includes doped regions 11 (N-type semiconductor region) and high-doped zone 12 (N+ type semiconductor region), such as Fig. 8 d
It is shown.Optionally, substrate 1 can select the N-type silicon of low doping concentration, and the doping concentration of substrate 1 is 1E11cm-3-1E15cm-3,
Phosphonium ion diffusion is carried out at the back side of N-type substrate 1, forms N+ type semiconductor layer, which restores two poles as fast
The cathode of pipe.After forming semiconductor layer 2 and high-doped zone 12, the structure of doped layer 3 is formed, as figure 8 e shows.
It wherein, can be from semiconductor layer 2 one according to injection depth selection in S30 when injecting Doped ions to substrate
Side injection, or injected from 12 side of n type semiconductor layer.For example, can choose when doped layer 3 is close to semiconductor layer 2 from half
The injection of 2 side of conductor layer；When doped layer 3 is close to n type semiconductor layer 12, it can choose and injected from 12 side of n type semiconductor layer.
The embodiment of the present invention on substrate 1 by being respectively formed anode region and cathodic region and then utilizing ion implanting
Technology forms doped layer 3 in substrate 1 (further, in doped regions 11), can be avoided due to forming anode region and yin
Influence of the higher anneal temperature of polar region to 3 performance of doped layer, and then can guarantee life control and the service life resistance of doped layer
The function of gear.
In addition, the preparation method further include: form first electrode 4, Yi Ji far from the side of semiconductor layer 2 in substrate 1
Semiconductor layer forms second electrode 5 far from the side of substrate, as illustrated in fig. 8f.Wherein, first electrode 4 is used as cathode, the second electricity
Pole 5 is used as anode.
It further include that the global longevity is formed in entire fast recovery diode in other optional embodiments of the present embodiment
The step of ordering control zone.For example, electron radiation or heavy metal diffusion can be carried out to N-type substrate 1, in entire fast recovery diode
Interior formation global carrier lifetime control zone.
The present embodiment reduces the drift region N- electric-field strength by increasing doped layer in the doped regions of fast recovery diode 11
Degree, to reduce the leakage current of fast recovery diode reverse blocking state.Simultaneously as doped layer provides the additional service life
Control function can reduce global carrier lifetime control zone to carrier lifetime control, reduce fast recovery diode
Forward conduction voltage drop.
In addition, the CONSTRUCTED SPECIFICATION for the fast recovery diode not being described in detail in the present embodiment, referring to figure 2. shown in-Fig. 6
The detailed description of embodiment, details are not described herein.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (10)
1. a kind of fast recovery diode characterized by comprising
The substrate of first conduction type；
The semiconductor layer of second conduction type is formed over the substrate, second conduction type and first conductive-type
Type is opposite；
Doped layer is formed in the substrate and identical as the conduction type of the substrate；The doped layer is by described
Substrate injects Doped ions, and annealed with predetermined temperature, the predetermined temperature is less than 500 DEG C.
2. fast recovery diode according to claim 1, which is characterized in that the predetermined temperature is 200-400 DEG C.
3. fast recovery diode according to claim 1, which is characterized in that the doping concentration of the semiconductor layer is
1E15cm-3-1E19cm-3。
4. fast recovery diode according to claim 1, which is characterized in that further include:
First electrode is formed in side of the substrate far from the semiconductor layer；
Second electrode is formed in side of the semiconductor layer far from the substrate.
5. fast recovery diode described in any one of -4 according to claim 1, which is characterized in that the Doped ions be hydrogen from
One of son, helium ion, phosphonium ion or silver ion.
6. a kind of preparation method of fast recovery diode characterized by comprising
The substrate for having the first conduction type is provided；
The semiconductor layer of the second conduction type, second conduction type and first conduction type are formed over the substrate
On the contrary；
Doped ions are injected to the substrate；
It is annealed with predetermined temperature to the substrate after ion implanting, forms doping identical with the substrate conduction type
Layer；Wherein, the predetermined temperature is less than 500 DEG C.
7. according to the method described in claim 6, it is characterized in that, the predetermined temperature is 200-400 DEG C.
8. according to the method described in claim 6, it is characterized in that, the implantation dosage of the Doped ions is 1E5-1E20cm-2。
9. according to the method described in claim 6, it is characterized in that, described form the half of the second conduction type over the substrate
Conductor layer includes:
With 1E13cm-2-1E15cm-2Implantation dosage to the substrate inject the second conduction type Doped ions.
10. the method according to any one of claim 6-9, which is characterized in that further include:
First electrode layer is formed far from the side of the semiconductor layer in the substrate；
The second electrode lay is formed far from the side of the substrate in the semiconductor layer.
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| CN201810990583.5A CN109216472A (en) | 2018-08-28 | 2018-08-28 | fast recovery diode and preparation method thereof |
| EP19854678.0A EP3846221A4 (en) | 2018-08-28 | 2019-08-27 | Semiconductor device and preparation method therefor, and fast recovery diode and preparation method therefor |
| PCT/CN2019/102835 WO2020043094A1 (en) | 2018-08-28 | 2019-08-27 | Semiconductor device and preparation method therefor, and fast recovery diode and preparation method therefor |
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