CN115206801A - Method for obtaining fast recovery diode with EMI not exceeding standard - Google Patents
Method for obtaining fast recovery diode with EMI not exceeding standard Download PDFInfo
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- CN115206801A CN115206801A CN202211026408.7A CN202211026408A CN115206801A CN 115206801 A CN115206801 A CN 115206801A CN 202211026408 A CN202211026408 A CN 202211026408A CN 115206801 A CN115206801 A CN 115206801A
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- 238000011084 recovery Methods 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 69
- 229910052796 boron Inorganic materials 0.000 claims abstract description 31
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000012360 testing method Methods 0.000 claims abstract description 28
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 36
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 31
- 229910052698 phosphorus Inorganic materials 0.000 claims description 29
- 239000011574 phosphorus Substances 0.000 claims description 29
- 229910052697 platinum Inorganic materials 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000009713 electroplating Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 7
- 230000032683 aging Effects 0.000 claims description 6
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 6
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 230000002159 abnormal effect Effects 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 238000007723 die pressing method Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000006872 improvement Effects 0.000 abstract description 5
- 238000010998 test method Methods 0.000 abstract description 4
- 238000012163 sequencing technique Methods 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract description 2
- 238000009826 distribution Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention provides a method for obtaining a fast recovery diode with EMI not exceeding the standard, which is different from the traditional diffusion mode, adopts a boron source with lower relative concentration, reduces the concentration distribution of boron in a P/N accessory barrier region, and reduces the impact of reverse recovery current on a circuit; packaging after dicing chips by using the principle of relative consistency of electrical properties of products in the same batch, sequencing according to the forward voltage value VF, and carrying out QRR waveform test from small to large according to intervals, namely, the fast recovery diode with EMI exceeding standard can be effectively controlled to leave a factory through improvement of a production process and a test method; the method does not increase the production cost additionally, does not reduce the reliability of the original product and is easy to realize.
Description
Technical Field
The invention relates to the technical field of diode production testing, in particular to a method for obtaining a fast recovery diode with EMI not exceeding the standard.
Background
The Fast Recovery Diode (FRD) is a semiconductor diode with the advantages of good switching characteristic, short reverse recovery time and the like, is mainly applied to electronic circuits such as a switching power supply, a PWM (pulse width modulation) and a frequency converter, and is used as a high-frequency rectifier diode, a freewheeling diode or a damping diode. The fast recovery diode has an internal structure different from that of a common PN junction diode, belongs to a PIN junction diode, namely a base region is added between a P-type silicon material and an N-type material to form a PIN silicon chip.
Due to the characteristics, the fast recovery diode generates overshoot voltage and spike current at the switching moment, so that dv/dt and di/dt are high, and an EMI (Electromagnetic Interference) problem is caused, but when the EMI problem of the fast recovery diode exceeds a certain standard, referring to fig. 1, a product fails, and therefore, the problem that the EMI of the fast recovery diode which is shipped from a factory exceeds the standard needs to be ensured.
Disclosure of Invention
The method for obtaining the fast recovery diode with the EMI not exceeding the standard solves the problem that the EMI does not exceed the standard when the fast recovery diode leaves a factory, and through the improvement of a production process and a test method, the fast recovery diode with the EMI exceeding the standard is not effectively avoided leaving the factory, and the method is low in cost and easy to realize.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
the invention discloses a method for obtaining a fast recovery diode with EMI not exceeding standard, which comprises the following steps:
cleaning the single wafer, and coating a phosphorus source prepared from deionized water, ammonium dihydrogen phosphate and absolute ethyl alcohol after cleaning;
performing first phosphorus diffusion to obtain a diffusion sheet after the first phosphorus diffusion;
thinning the back of the diffusion sheet subjected to the first phosphorus diffusion by 18-20 microns, cleaning, and performing second phosphorus diffusion to obtain a diffusion sheet subjected to the second phosphorus diffusion;
thinning the back of the diffusion sheet subjected to the second phosphorus diffusion by 10 microns, cleaning, coating a low-concentration boron source, and performing boron diffusion for 30-36 hours at the furnace temperature of 1255-1261 ℃;
thinning the back of the diffusion sheet subjected to boron diffusion by 10 micrometers, cleaning, coating a platinum source, and performing platinum diffusion;
corroding, passivating glass and metallizing the surface of the diffusion sheet diffused by the platinum, and scribing and splitting;
welding, die pressing, aging and cooling;
testing the sample fast recovery diode after welding, mould pressing, aging and cooling;
the test process comprises the following steps:
measuring forward voltage values VF of a plurality of sample fast recovery diodes, and classifying the sample fast recovery diodes into a plurality of classes according to the forward voltage values VF obtained through measurement and according to the magnitude sequence;
carrying out QRR waveform test on all fast recovery diodes in each class, and recording the class of the fast recovery diode when the QRRs of the fast recovery diodes are detected to be abnormal;
setting a lowest forward voltage value VFL and a highest forward voltage value VFH according to a test result;
electroplating all finished fast recovery diodes;
measuring forward voltage values VF of a plurality of electroplated fast recovery diodes, classifying the electroplated fast recovery diodes into a plurality of classes according to the forward voltage values VF obtained through measurement in a size sequence, confirming the difference between the forward voltage values VF before electroplating and after electroplating, and performing QRR waveform test again to obtain the minimum forward voltage value VF of the fast recovery diodes with qualified QRR waveforms;
correcting the lowest forward voltage value VFL and the highest forward voltage value VFH by using the acquired minimum forward voltage value VF of the fast recovery diode qualified by the QRR waveform;
performing an all-in-one test on all the finished fast recovery diodes;
after the test of the integrated machine is completed, a plurality of finished fast recovery diodes are extracted for QRR waveform detection, and the QRR waveform is put in storage if the QRR waveform is qualified, and then shipment is prepared.
Further, the proportion of the deionized water, the ammonium dihydrogen phosphate and the absolute ethyl alcohol in the phosphorus source is as follows: 300ml.
Further, the conditions under which the first phosphorus diffusion is performed are: the furnace temperature is 1200 ℃, and the time is 2 hours.
Further, the conditions for performing the second phosphorus diffusion are as follows: the furnace temperature is 1260 ℃, and the time is 60 hours.
Further, the low-concentration boron source comprises ethylene glycol monomethyl ether and boron trioxide in a ratio of 400ml:30-60g.
Further, the platinum source comprises absolute ethyl alcohol and platinum water, and the proportion is as follows: 100ml:1g of the total weight of the composition.
Further, the conditions under which the platinum diffusion is performed are: the furnace temperature is 910-930 ℃ and the time is 2-3 hours.
The beneficial technical effects are as follows:
1. the invention discloses a method for obtaining a fast recovery diode with the EMI not exceeding the standard, which solves the problem that the EMI exceeds the standard when the fast recovery diode leaves a factory, does not effectively avoid the problem that the EMI exceeds the standard when the fast recovery diode leaves the factory through the improvement of a production process and a test method, and has low cost and easy realization;
2. in the invention, the back of the diffusion sheet after the second phosphorus diffusion is thinned by 10 microns, the diffusion sheet is coated with a low-concentration boron source after being cleaned, and the diffusion is carried out by using the low-concentration boron source, so that the impact influence of reverse recovery current on a circuit when a fast recovery diode is reversely biased is effectively reduced, and the total charge amount of a potential barrier region when the fast recovery diode is reversely biased is reduced;
3. in the invention, the temperature of boron diffusion is 1255-1261 ℃, compared with the conventional temperature of 1263 ℃, the boron diffusion concentration is effectively reduced;
4. in the invention, the boron diffusion time is 30-36 hours, compared with the conventional diffusion time of 45 hours, the boron junction depth is reduced by 8-10 μm, the base region is increased by 8-10 μm, the reverse breakdown voltage VB is effectively adjusted, and the average VB is increased from 310V to 420V.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings used in the description of the embodiments will be briefly described below.
FIG. 1 is a flow chart of the steps of a method for obtaining a fast recovery diode with non-exceeding EMI in accordance with the present invention;
fig. 2 is a flow chart of the steps for testing a sample fast recovery diode.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
The invention discloses a method for obtaining a fast recovery diode with EMI not exceeding standard, which specifically comprises the following steps with reference to FIG. 1:
s1: cleaning the single wafer, and coating a phosphorus source prepared from deionized water, ammonium dihydrogen phosphate and absolute ethyl alcohol after cleaning;
specifically, the proportion of deionized water, ammonium dihydrogen phosphate and absolute ethyl alcohol in the phosphorus source is as follows: 300ml;
s2: performing first phosphorus diffusion to obtain a diffusion sheet after the first phosphorus diffusion;
specifically, the conditions for performing the first phosphorus diffusion are: the furnace temperature is 1200 ℃, and the time is 2 hours;
s3: thinning the back of the diffusion sheet subjected to the first phosphorus diffusion by 18-20 microns, cleaning, and performing second phosphorus diffusion to obtain a diffusion sheet subjected to the second phosphorus diffusion;
specifically, the conditions for performing the second phosphorus diffusion are as follows: the furnace temperature is 1260 ℃, and the time is 60 hours;
s4: thinning the back of the diffusion sheet subjected to the second phosphorus diffusion by 10 microns, cleaning, coating a low-concentration boron source, and performing boron diffusion for 30-36 hours at the furnace temperature of 1255-1261 ℃;
specifically, compared with the traditional boron diffusion, the method adopts a low-concentration boron source, and the diffusion temperature is reduced to 1255-1261 ℃ from 1263 ℃ which is conventional; the diffusion time is adjusted to 30-36 hours from the conventional 45 hours or so, the boron diffusion concentration is effectively reduced, the boron junction depth is reduced by 8-10 mu m, the base region increasing width is 8-10 mu m, the reverse breakdown voltage VB is effectively adjusted, and the average VB is increased from 310V to 420V; the low-concentration boron source comprises ethylene glycol monomethyl ether and boron trioxide, and the proportion of the boron source is 400ml:30-60g; it should be noted here that, when boron diffusion is performed, a low-concentration boron source may be selected, or a self-prepared low-concentration boron source solution may be selected, and the selection of the low-concentration boron source may effectively reduce the impact influence of the reverse recovery current on the circuit during reverse bias, and reduce the total charge amount of the barrier region during reverse bias;
s5: thinning the back of the diffusion sheet subjected to boron diffusion by 10 micrometers, cleaning, coating a platinum source, and performing platinum diffusion;
specifically, the platinum source comprises absolute ethyl alcohol and platinum water, and the proportion is as follows: 100ml, 1g, conditions for platinum diffusion were: the furnace temperature is 910-930 ℃, and the time is 2-3 hours;
s6: corroding, passivating glass and metallizing the surface of the diffusion sheet diffused by the platinum, and scribing and splitting;
s7: welding, die pressing, aging and cooling;
specifically, after normal screen cores are welded, 3NP or N3 plastic packaging materials are used for mould pressing, the materials are aged at 175 ℃ for 12H, and the test is carried out after the materials are cooled for at least 8 hours;
s8: testing the sample fast recovery diode cooled after welding, mould pressing and aging;
after cutting and separation, according to the principle that the discreteness of the same batch is small during a sample, VF test is adopted for sequencing and then QRR waveforms are detected, because the actual resistivity of the batch is changed, the material composition and the porosity of a silicon wafer are also different, and the influence of the actual temperature and the ambient temperature during boron diffusion on a thermocouple is different, the position and the concentration of boron ions in a chip are also different, so that the distribution of each batch of VF is different, VF (forward voltage value) sequencing needs to be carried out on each batch, QRR graphs are sampled and tested in a segmented mode one by one, the obtained graphs are compared with VF, VFL and VFH are screened slightly, and then the test is carried out on an integrated machine, so that the problem that EMI exceeds the standard during application can be avoided.
Specifically, the test procedure includes:
measuring forward voltage values VF of a plurality of sample fast recovery diodes, and classifying the sample fast recovery diodes into a plurality of classes according to the forward voltage values VF obtained by measurement and according to the sequence of magnitude;
specifically, the forward voltage value VF obtained by measurement can be classified into 5 categories in order of magnitude: less than 0.9V, 0.9-0.95V, 0.95-0.975V, 0.975-1.05V, 1.05-1.1V, and more than 1.1V are directly considered as disqualification (excessive power consumption); of course, the interval values divided into several types and each type can be determined according to the actual situation;
carrying out QRR waveform test on all fast recovery diodes in each class, and recording the class of the fast recovery diode when the QRRs of the fast recovery diodes are detected to be abnormal;
specifically, the QRR waveform is abnormal, i.e., at least a portion of the waveform exceeds the baseline;
setting a lowest forward voltage value VFL and a highest forward voltage value VFH according to a test result;
specifically, VFL is a parameter in classification, and is a minimum value set according to the actual QRR waveform, and a maximum value VFH is set in consideration of power consumption; the small forward voltage value VF may correspond to a poor QRR waveform, so we find that VF is small but QRR waveform is good, i.e. QRR waveform does not exceed the baseline, and set this parameter as VFL.
Electroplating all finished fast recovery diodes;
measuring forward voltage values VF of a plurality of electroplated fast recovery diodes, classifying the electroplated fast recovery diodes into a plurality of classes according to the forward voltage values VF obtained through measurement in a size sequence, confirming the difference between the forward voltage values VF before electroplating and after electroplating, and performing QRR waveform test again to obtain the minimum forward voltage value VF of the fast recovery diodes with qualified QRR waveforms; (ii) a
Specifically, the reason why the measurement is performed again after the plating here is: during feeding, the copper lead is slightly oxidized after welding, so that the copper lead is only a reference value, and a layer of tin is coated on the electroplated copper lead after deoxidation and coating, so that VF (variable frequency) test is more accurate.
Correcting the lowest forward voltage value VFL and the highest forward voltage value VFH by using the acquired minimum forward voltage value VF of the fast recovery diode qualified by the QRR waveform;
performing an all-in-one test on all the finished fast recovery diodes;
after the test of the integrated machine is completed, a plurality of finished fast recovery diodes are extracted for QRR waveform detection, and the QRR waveform is put in storage if the QRR waveform is qualified, and then shipment is prepared.
According to the method for obtaining the fast recovery diode with the EMI not exceeding the standard, disclosed by the invention, the fast recovery diode with the EMI exceeding the standard can be effectively controlled to leave a factory through the improvement of the manufacturing process and the testing method; the method does not increase the production cost additionally, does not reduce the reliability of the original product and is easy to realize.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above examples are only for describing the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and various modifications and improvements made to the technical solution of the present invention by those skilled in the art without departing from the spirit of the present invention should fall within the protection scope defined by the claims of the present invention.
Claims (7)
1. A method for obtaining a fast recovery diode with not exceeding EMI standard is characterized by comprising the following steps:
cleaning the single chip, and coating a phosphorus source prepared from deionized water, ammonium dihydrogen phosphate and absolute ethyl alcohol after cleaning;
performing first phosphorus diffusion to obtain a diffusion sheet after the first phosphorus diffusion;
thinning the back of the diffusion sheet after the first phosphorus diffusion by 18-20 μ m, cleaning and then performing second phosphorus diffusion to obtain a diffusion sheet after the second phosphorus diffusion;
thinning the back of the diffusion sheet after the second phosphorus diffusion by 10 degrees μ m, after cleaning, coating a low-concentration boron source, and performing boron diffusion for 30-36 hours at the furnace temperature of 1255-1261 ℃;
thinning the back of the diffusion sheet after boron diffusion by 10 μ m, coating a platinum source after cleaning, and performing platinum diffusion;
corroding, passivating glass and metallizing the surface of the diffusion sheet diffused by the platinum, and scribing and splitting;
welding, die pressing, aging and cooling;
testing the sample fast recovery diode after welding, mould pressing, aging and cooling;
the test process comprises the following steps:
measuring forward voltage values VF of a plurality of sample fast recovery diodes, and classifying the sample fast recovery diodes into a plurality of classes according to the forward voltage values VF obtained through measurement and according to the magnitude sequence;
carrying out QRR waveform test on all fast recovery diodes in each class, and recording the class of the fast recovery diode when the QRRs of the fast recovery diodes are detected to be abnormal;
setting a lowest forward voltage value VFL and a highest forward voltage value VFH according to a test result;
electroplating all finished fast recovery diodes;
measuring forward voltage values VF of a plurality of electroplated fast recovery diodes, classifying the electroplated fast recovery diodes into a plurality of classes according to the forward voltage values VF obtained through measurement in a size sequence, confirming the difference between the forward voltage values VF before electroplating and after electroplating, and performing QRR waveform test again to obtain the minimum forward voltage value VF of the fast recovery diodes with qualified QRR waveforms;
correcting the lowest forward voltage value VFL and the highest forward voltage value VFH by using the acquired minimum forward voltage value VF of the fast recovery diode with qualified QRR waveform;
performing an all-in-one test on all the finished fast recovery diodes;
after the test of the integrated machine is completed, a plurality of finished fast recovery diodes are extracted for QRR waveform detection, and the QRR waveform is put in storage if the QRR waveform is qualified, and then shipment is prepared.
2. The method of claim 1, wherein the ratio of deionized water, ammonium dihydrogen phosphate and absolute ethyl alcohol in the phosphorus source is: 300ml.
3. The method of claim 1, wherein the first phosphor diffusion is performed under the following conditions: the furnace temperature is 1200 ℃ and the time is 2 hours.
4. The method of claim 1, wherein the second phosphor diffusion is performed under the following conditions: the furnace temperature is 1260 ℃, and the time is 60 hours.
5. The method of claim 1, wherein the low concentration boron source comprises ethylene glycol monomethyl ether and boron trioxide in a ratio of 400ml:30-60g.
6. The method of claim 1, wherein the source of platinum comprises absolute ethanol and platinum water in the ratio of: 100ml:1g of the total weight of the composition.
7. The method of claim 1, wherein the platinum diffusion is performed under the following conditions: the furnace temperature is 910-930 ℃, and the time is 2-3 hours.
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| CN202211026408.7A CN115206801B (en) | 2022-08-25 | 2022-08-25 | Method for obtaining fast recovery diode with EMI (electro-magnetic interference) non-standard exceeding |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000223719A (en) * | 1999-01-27 | 2000-08-11 | Shindengen Electric Mfg Co Ltd | Semiconductor device |
| JP2003282575A (en) * | 2002-03-25 | 2003-10-03 | Shindengen Electric Mfg Co Ltd | Semiconductor device and manufacturing method therefor |
| CN103618006A (en) * | 2013-10-30 | 2014-03-05 | 国家电网公司 | A fast recovery diode and a manufacturing method thereof |
| KR101398125B1 (en) * | 2013-06-19 | 2014-05-27 | 주식회사 시지트로닉스 | Self aligned fast recovery diode and fabrication method thereof |
| CN105977154A (en) * | 2016-06-06 | 2016-09-28 | 北京时代民芯科技有限公司 | Diffusion-technology-based manufacture method for fast recovery diode chip having double buffering layers |
| CN108133890A (en) * | 2017-12-23 | 2018-06-08 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of production method of high pressure fast-recovery commutation diode |
| CN109638083A (en) * | 2018-12-29 | 2019-04-16 | 捷捷半导体有限公司 | A kind of fast recovery diode and preparation method thereof |
-
2022
- 2022-08-25 CN CN202211026408.7A patent/CN115206801B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000223719A (en) * | 1999-01-27 | 2000-08-11 | Shindengen Electric Mfg Co Ltd | Semiconductor device |
| JP2003282575A (en) * | 2002-03-25 | 2003-10-03 | Shindengen Electric Mfg Co Ltd | Semiconductor device and manufacturing method therefor |
| KR101398125B1 (en) * | 2013-06-19 | 2014-05-27 | 주식회사 시지트로닉스 | Self aligned fast recovery diode and fabrication method thereof |
| CN103618006A (en) * | 2013-10-30 | 2014-03-05 | 国家电网公司 | A fast recovery diode and a manufacturing method thereof |
| CN105977154A (en) * | 2016-06-06 | 2016-09-28 | 北京时代民芯科技有限公司 | Diffusion-technology-based manufacture method for fast recovery diode chip having double buffering layers |
| CN108133890A (en) * | 2017-12-23 | 2018-06-08 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of production method of high pressure fast-recovery commutation diode |
| CN109638083A (en) * | 2018-12-29 | 2019-04-16 | 捷捷半导体有限公司 | A kind of fast recovery diode and preparation method thereof |
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