CN215342577U - One-way TVS device and packaging structure thereof - Google Patents
One-way TVS device and packaging structure thereof Download PDFInfo
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- CN215342577U CN215342577U CN202121811791.8U CN202121811791U CN215342577U CN 215342577 U CN215342577 U CN 215342577U CN 202121811791 U CN202121811791 U CN 202121811791U CN 215342577 U CN215342577 U CN 215342577U
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Abstract
The application provides a one-way TVS device and a packaging structure thereof, and relates to the technical field of TVS chips. The unidirectional TVS device comprises at least two TVS chips which are sequentially connected in series, wherein the at least two TVS chips comprise a target TVS chip; the voltage of the target TVS chip is larger than a threshold value, the target TVS chip comprises a TVS structure and a triode, and the TVS structure is connected with the triode in parallel. The application provides a one-way TVS device and packaging structure thereof has the advantage that the device performance is improved.
Description
Technical Field
The application relates to the technical field of TVS chips, in particular to a one-way TVS device and a packaging structure thereof.
Background
At present, the requirements of the semiconductor market on the short-wave lightning stroke performance and the residual Voltage of a Transient diode (TVS) device are higher and higher, and part of bidirectional TVSs can improve the short-wave capability and reduce the residual Voltage by utilizing the negative resistance characteristic. Unidirectional TVS generally have no negative resistance characteristics, so it is difficult to improve its short-wave capability.
In order to improve the short-wave capability of the unidirectional TVS, device manufacturers usually adopt a method of connecting multiple internal chips in series to improve the lightning stroke performance and reduce the residual voltage, so as to meet the market demand. However, the performance improvement is still small, and the residual voltage performance is not significantly improved compared with the single chip device.
In conclusion, the problems of high residual voltage and poor performance of the unidirectional TVS device exist in the prior art.
Disclosure of Invention
An object of the application is to provide a one-way TVS device and packaging structure thereof to improve the problem that the one-way TVS device exists that the residual voltage is high, the performance is poor.
In order to achieve the above purpose, the embodiments of the present application employ the following technical solutions:
on one hand, the embodiment of the application provides a unidirectional TVS device, which includes at least two TVS chips, wherein the at least two TVS chips are sequentially connected in series, and the at least two TVS chips include a target TVS chip; wherein the content of the first and second substances,
the voltage of target TVS chip is greater than the threshold value, and the target TVS chip includes TVS structure and triode, TVS structure and triode are parallelly connected.
Optionally, the target TVS chip includes a first N + layer, a first P-layer and a second N + layer, where the first N + layer and the first P + layer are located at the same layer, the first P-layer is located at one side of the first N + layer and the first P + layer, and the second N + layer is located at one side of the first P-layer; wherein the content of the first and second substances,
the first N + layer, the first P-layer and the second N + layer form a triode, and the first P + layer, the first P-layer and the second N + layer form a TVS structure.
Optionally, the target TVS chip further includes a first metal layer, a second metal layer, and a passivation layer, the first metal layer is located on one side of the first N + layer and the first P + layer, the second metal layer is located on one side of the second N + layer, a groove is disposed at an end of the first P-layer and the second N + layer, and the passivation layer is disposed in the groove.
Optionally, the base of the triode is connected with the anode of the TVS structure, and the collector of the triode is connected with the cathode of the TVS structure.
Optionally, the threshold is greater than or equal to 18V.
Optionally, the unidirectional TVS device includes a first TVS chip and a second TVS chip, and the first TVS chip and the second TVS chip are connected in series; the first TVS chip and/or the second TVS chip are target TVS chips.
Optionally, the voltage of the first TVS chip is smaller than a threshold, the voltage of the second TVS chip is larger than the threshold, and the second TVS chip is used as a target TVS chip.
Optionally, the unidirectional TVS device includes a non-target TVS chip, and a voltage of the non-target TVS chip is less than a threshold; wherein;
the non-target TVS chip comprises a second P + layer, a second P-layer and a third N + layer, wherein the second P + layer, the second P-layer and the third N + layer are connected layer by layer.
Optionally, when the number of the TVS chips is greater than two, a part or all of the at least two TVS chips are target TVS chips.
On the other hand, the embodiment of the application further provides a TVS packaging structure, which includes the unidirectional TVS device.
Compared with the prior art, the method has the following beneficial effects:
the application provides a unidirectional TVS device and a packaging structure thereof, wherein the unidirectional TVS device comprises at least two TVS chips which are sequentially connected in series, and the at least two TVS chips comprise a target TVS chip; the voltage of the target TVS chip is larger than a threshold value, the target TVS chip comprises a TVS structure and a triode, and the TVS structure is connected with the triode in parallel. Because the triode has the negative resistance characteristic, after the TVS structure is connected with the triode in parallel, the negative resistance characteristic of the triode can be utilized to improve the overall through-current capacity of the device; and because the negative resistance characteristic enables the device to have lower residual voltage, the device has obvious performance improvement on the current capacity and the residual voltage level.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and it will be apparent to those skilled in the art that other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic cross-sectional view of a first unidirectional TVS device in the prior art.
Fig. 2 is a schematic cross-sectional view of a second unidirectional TVS device of the prior art.
Fig. 3 is a schematic cross-sectional view of a TVS chip according to an embodiment of the present application.
Fig. 4 is an equivalent circuit schematic diagram of a unidirectional TVS device according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is also to be noted that, unless otherwise explicitly specified or limited, the terms "disposed" and "connected" are to be interpreted broadly, e.g., as being either fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
As described in the background, at present, unidirectional TVS generally has no negative resistance characteristic, so that it is difficult to improve its short-wave capability.
Referring to fig. 1, in a conventional scheme, when a unidirectional TVS device is manufactured, 1 TVS chip is used, as shown in fig. 1, in the drawing, 1 denotes a plastic package body, 2 denotes a TVS chip, 3 denotes a bonding pad, 4 denotes a lead frame, and 5 denotes a frame. As can be seen from the figure, the unidirectional TVS device includes only 1 TVS chip.
Because the unidirectional TVS has no negative resistance characteristic, the TVS device has the defects of weak lightning stroke capability, poor performance and higher residual voltage.
Based on this, in order to improve the short-wave capability of the unidirectional TVS, device manufacturers usually adopt a method of connecting multiple chips in series to improve the lightning stroke performance and reduce the residual voltage, so as to meet the market demand. For example, as shown in fig. 2, a cross-sectional view of a TVS device formed by two TVS chips connected in series is shown.
For example, if a unidirectional 30V device is required, 2 15V TVS chips can be used.
However, although the performance of the TVS device formed by connecting two TVS chips in series is improved, the performance improvement range is still small, and the residual voltage performance is not significantly improved compared with the device of a single chip.
Therefore, the TVS device manufactured based on the existing unidirectional TVS process has the defects that the short-wave current capacity is weak, and the residual voltage is limited by the difficulty in achieving a low level of substrate resistivity. For example, the 30V unidirectional TVS with 118mil size is the mainstream in the market, the combined wave current capacity of 1.2/50us-8/20us @2ohm is 200A-400A, and the limit residual pressure is 60V-100V.
In view of the above, referring to fig. 3 and fig. 4, the present application provides a unidirectional TVS device formed by connecting at least two TVS chips in series, wherein at least one TVS chip includes a TVS and a transistor, so as to improve the performance of the unidirectional TVS device.
The following is an exemplary illustration of a unidirectional TVS device provided in the present application:
as an implementation manner, the unidirectional TVS device includes at least two TVS chips, the at least two TVS chips are connected in series in sequence, and the at least two TVS chips include a target TVS chip; the voltage of the target TVS chip is larger than a threshold value, the target TVS chip comprises a TVS structure and a triode, and the TVS structure is connected with the triode in parallel.
Through the mode of decomposing the inside of the unidirectional TVS device into two TVS chips connected in series, the current capacity is improved. Simultaneously the inside parallelly connected technology of TVS structure and triode that adopts of target TVS chip utilizes the negative resistance characteristic of triode, further improves the whole discharge current capability of device, in addition, because the negative resistance characteristic of triode for the device has lower residual voltage, compares in the scheme of the inside series connection of conventional single TVS chip and a plurality of TVS chip, and the one-way TVS device that this application provided all has had obvious performance promotion on discharge current capability and residual voltage level.
Since the negative resistance characteristic of the transistor needs to be more obvious than 18V, the threshold provided by the present application is greater than or equal to 18V, for example, the threshold is set to 18V, or the threshold is set to 20V.
On this basis, taking a unidirectional 30V device as an example, if two TVS chips are adopted, one of the TVS chips needs to be larger than 18V, and the other TVS chip needs to be smaller than 12V. For example, one of the TVS chips is 20V, the other TVS chip is 10V, and the 20V TVS chip includes a TVS structure and a transistor; alternatively, one TVS chip is 25V, and the other TVS chip is 5V, which is not limited herein.
In addition, the number of TVS chips in the unidirectional TVS device is not limited in this application, for example, the number of TVS chips in the unidirectional TVS device may be 2, or may be 3 or more.
As an implementation manner, the unidirectional TVS device includes a first TVS chip and a second TVS chip, which are connected in series; the first TVS chip and/or the second TVS chip are/is a target TVS chip.
That is, when the unidirectional TVS device includes 2 TVS chips, only one target TVS chip may be included in the 2 TVS chips, or the 2 TVS chips are all target TVS chips. For example, when the unidirectional TVS device is a 30V device, one TVS chip is 10V, the other is 20V, and there is only one target TVS chip at this time. Or, when the unidirectional TVS device is a 40V device, 2 TVS chips are 20V, and 2 TVS chips can be all used as target TVS chips. Of course, when the 2 TVS chips are all 20V, only one of the TVS chips may be used as the target TVS chip, which is not limited herein.
Similarly, when the number of the TVS chips is greater than two, a part or all of the at least two TVS chips are the target TVS chip. For example, when the number of TVS chips in the unidirectional TVS device is 3, one of the TVS chips may be used as a target TVS chip, two of the TVS chips may be used as target TVS chips, or three of the TVS chips may be used as target TVS chips.
As an implementation mode, the target TVS chip comprises a first N + layer, a first P-layer and a second N + layer, wherein the first N + layer and the first P + layer are positioned on the same layer, the first P-layer is positioned on one side of the first N + layer and the first P + layer, and the second N + layer is positioned on one side of the first P-layer; the TVS structure comprises a first N + layer, a first P-layer and a second N + layer, wherein the first N + layer, the first P-layer and the second N + layer form a triode, and the first P + layer, the first P-layer and the second N + layer form a TVS structure.
Through the setting mode, the base electrode of the triode is connected with the anode of the TVS structure, the collector electrode of the triode is connected with the cathode of the TVS structure, and then the parallel connection of the triode and the TVS structure is realized.
Certainly, the target TVS chip further includes a first metal layer, a second metal layer and a passivation layer, the first metal layer is located at one side of the first N + layer and the first P + layer, the second metal layer is located at one side of the second N + layer, the end portions of the first P-layer and the second N + layer are provided with grooves, and the passivation layer is disposed in the grooves.
In an optional implementation manner, the unidirectional TVS device includes a non-target TVS chip, and a voltage of the non-target TVS chip is less than a threshold; the non-target TVS chip comprises a second P + layer, a second P-layer and a third N + layer, wherein the second P + layer, the second P-layer and the third N + layer are connected layer by layer.
In order to more intuitively illustrate the advantages of the process of the unidirectional TVS device provided by the present application compared with the unidirectional TVS device produced under the normal process conditions, taking a 118mil chip size as an example, under the same package SMC:
the conventional scheme is as follows: 15BJ30A (internal 1 chip 3.0 layout 30V chip):
short wave IPP＝300A，VC@300A＝65V。
And an internal series scheme is adopted: 15BJ30A-PP (inner 2 chips of 3.0 plate 15V): short wave IPP＝450A，VC@450A＝75V，VC@300A＝65V。
And adopt the one-way TVS device that this application provided: SM1K30A-PP (1 inner 3.0 plate 10V +1 3.0 plate one-way 20V chip):
short wave IPP＝800A，VC@800A＝55V，VC@300A＝45V。
From the comparison, the limit residual voltage of the unidirectional TVS device provided by the application is reduced from 60-100V to 45-55V, and the integral reduction is 20-50%; meanwhile, the current capacity level is improved from 300-450A to 800A, the whole performance is improved by 70-180%, and the whole performance of the device is greatly improved.
For convenience of illustration, the present application further provides a method for manufacturing a unidirectional TVS device, taking TVS10A + TVS20A unidirectional as an example:
the manufacturing process of the unidirectional TVS10A chip comprises the following steps:
1. taking a P-type substrate single chip, wherein the resistivity is 0.01-0.04 omega-cm, and the thickness is 240-;
2. after the single chip is cleaned, phosphor on two sides is pre-expanded, the surface PSG is completely soaked, and the pre-expansion concentration of the phosphor is 1.5-2.5 omega/□;
3. after the front surface of the single wafer is subjected to spin coating protection, acid etching is carried out to 220-240 mu m to remove the back surface phosphorus junction;
4. after the single wafer is cleaned, the back side is supplemented with boron, and the concentration is 5-8 omega/□. Then diffusion is carried out at 1240 and 1280 ℃ for 10-20h under the high temperature environment to form junction depth, and the front phosphorus junction depth is 20-40 um;
5. carrying out photoetching on the front surface of the single wafer, carrying out mesa corrosion, and corroding to form a groove with the depth of 50-70 um;
6. filling glass in the groove to form a glass passivation protective layer;
7. and carrying out metallization and alloy treatment on the chip, and finally testing and scribing.
The manufacturing process of the unidirectional TVS20A chip comprises the following steps:
1. taking a P-type substrate single chip, wherein the resistivity is 0.05-0.15 omega-cm, and the thickness is 240-;
2. cleaning the single wafer, and thermally oxidizing to grow an oxide layer of 1.5-2.5 um;
3. carrying out photoetching exposure on the back of the single wafer to form a back N + window, then carrying out photoetching cleaning to corrode the back N + window, and when carrying out photoetching cleaning, carrying out uniform glue protection on the front so that an oxide layer on the front is completely removed;
4. soaking the surface PSG and the oxide layer completely after phosphorus pre-diffusion is carried out on the single crystal wafer, wherein the phosphorus pre-diffusion concentration is 1.5-2.5 omega/□;
5. and supplementing boron to the back of the single wafer, wherein the concentration is 5-8 omega/□. Then diffusion is carried out at 1240 and 1280 ℃ for 10-20h under the high temperature environment to form junction depth, and the front phosphorus junction depth is 20-40 um;
6. carrying out photoetching on the front surface of the single wafer, carrying out mesa corrosion, and corroding to form a groove with the depth of 50-70 um;
7. filling glass in the groove to form a glass passivation protective layer; 8. and carrying out metallization and alloy treatment on the chip, and finally testing and scribing.
On the basis of the implementation manner, the application further provides a TVS packaging structure, and the TVS packaging structure comprises the unidirectional TVS device.
In summary, the present application provides a unidirectional TVS device and a package structure thereof, where the unidirectional TVS device includes at least two TVS chips, the at least two TVS chips are connected in series in sequence, and the at least two TVS chips include a target TVS chip; the voltage of the target TVS chip is larger than a threshold value, the target TVS chip comprises a TVS structure and a triode, and the TVS structure is connected with the triode in parallel. Because the triode has the negative resistance characteristic, after the TVS structure is connected with the triode in parallel, the negative resistance characteristic of the triode can be utilized to improve the overall through-current capacity of the device; and because the negative resistance characteristic enables the device to have lower residual voltage, the device has obvious performance improvement on the current capacity and the residual voltage level.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
It will be evident to those skilled in the art that the present application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. A unidirectional TVS device is characterized by comprising at least two TVS chips which are sequentially connected in series, wherein the at least two TVS chips comprise a target TVS chip; wherein the content of the first and second substances,
the voltage of target TVS chip is greater than the threshold value, and the target TVS chip includes TVS structure and triode, TVS structure and triode are parallelly connected.
2. The unidirectional TVS device of claim 1, wherein said target TVS chip comprises a first N + layer, a first P-layer, and a second N + layer, said first N + layer and said first P + layer being located at the same layer, said first P-layer being located at a side of said first N + layer, said first P + layer, said second N + layer being located at a side of said first P-layer; wherein the content of the first and second substances,
the first N + layer, the first P-layer and the second N + layer form a triode, and the first P + layer, the first P-layer and the second N + layer form a TVS structure.
3. The unidirectional TVS device of claim 2, wherein said target TVS chip further comprises a first metal layer, a second metal layer and a passivation layer, said first metal layer is located at one side of said first N + layer and said first P + layer, said second metal layer is located at one side of said second N + layer, and ends of said first P-layer and said second N + layer are provided with grooves, and said passivation layer is disposed in said grooves.
4. A unidirectional TVS device as in any of claims 1-3, wherein said transistor has a base connected to an anode of said TVS structure and a collector connected to a cathode of said TVS structure.
5. The unidirectional TVS device of claim 1, wherein said threshold value is greater than or equal to 18V.
6. The unidirectional TVS device of claim 1, wherein said unidirectional TVS device comprises a first TVS chip and a second TVS chip, said first TVS chip and said second TVS chip being connected in series; the first TVS chip and/or the second TVS chip are target TVS chips.
7. The unidirectional TVS device of claim 6, wherein a voltage of said first TVS chip is less than a threshold value, a voltage of said second TVS chip is greater than a threshold value, and said second TVS chip is a target TVS chip.
8. The unidirectional TVS device of claim 1, wherein said unidirectional TVS device comprises a non-target TVS chip, a voltage of said non-target TVS chip being less than a threshold value; wherein the content of the first and second substances,
the non-target TVS chip comprises a second P + layer, a second P-layer and a third N + layer, wherein the second P + layer, the second P-layer and the third N + layer are connected layer by layer.
9. The unidirectional TVS device of claim 1, wherein when the number of said TVS chips is greater than two, a part or all of said at least two TVS chips are target TVS chips.
10. A TVS package structure, characterized in that said TVS package structure comprises a unidirectional TVS device as claimed in any one of claims 1 to 9.
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| CN115472605A (en) * | 2022-09-10 | 2022-12-13 | 江苏晟驰微电子有限公司 | Manufacturing method of high-power low-clamping protection device and protection device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115472605A (en) * | 2022-09-10 | 2022-12-13 | 江苏晟驰微电子有限公司 | Manufacturing method of high-power low-clamping protection device and protection device |
| CN115472605B (en) * | 2022-09-10 | 2023-11-28 | 江苏晟驰微电子有限公司 | Manufacturing method of high-power low-clamping protection device and protection device |
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