CN103117325B - The reworking method of defective polycrystalline diffusion square resistance - Google Patents
The reworking method of defective polycrystalline diffusion square resistance Download PDFInfo
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- CN103117325B CN103117325B CN201110365845.7A CN201110365845A CN103117325B CN 103117325 B CN103117325 B CN 103117325B CN 201110365845 A CN201110365845 A CN 201110365845A CN 103117325 B CN103117325 B CN 103117325B
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- etching liquid
- square resistance
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- defective polycrystalline
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 99
- 230000002950 deficient Effects 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 40
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 70
- 238000005530 etching Methods 0.000 claims abstract description 70
- 239000007788 liquid Substances 0.000 claims abstract description 68
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 61
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 35
- 238000005260 corrosion Methods 0.000 claims abstract description 23
- 230000007797 corrosion Effects 0.000 claims abstract description 23
- 210000005056 cell body Anatomy 0.000 claims abstract description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 17
- 239000011574 phosphorus Substances 0.000 abstract description 17
- 238000005516 engineering process Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000036760 body temperature Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 241000084978 Rena Species 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Cleaning Or Drying Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
The embodiment of the present invention provides a kind of reworking method of defective polycrystalline diffusion square resistance, it is characterized in that, said method comprising the steps of: (1) configures the etching liquid mixed by sulfuric acid, nitric acid and hydrofluoric acid; (2) containing described etching liquid into temperature is the cell body of 5 ~ 20 DEG C; (3) defective polycrystalline diffusion square resistance is inserted described etching liquid and carry out back of the body corrosion, the drift velocity of described defective polycrystalline diffusion square resistance in described etching liquid is 0.8 ~ 2m/min.The method that the embodiment of the present invention provides can remove the phosphorus in defective polycrystalline diffusion square resistance front or back side diffusion effectively, make the defective polycrystalline diffusion square resistance when doing over again have a clean diffusingsurface, follow-up when re-starting diffusion the uniformity of square higher.
Description
Technical field
The present invention relates to area of solar cell, particularly relate to the reworking method of defective polycrystalline diffusion square resistance.
Background technology
In solar cell manufacturing process, diffusion square is a very important parameter, square, i.e. square resistance.Consider a block length be l, wide be a, the thick thin layer for t, if the resistivity of this layer material is ρ, then the resistance of this whole thin layer is
and in a certain proportion of nitric acid of silicon chip back side, hydrofluoric acid and sulfuric acid mixture liquid process to remove the effect of silicon chip back side and side phosphorus, remove phosphorosilicate glass simultaneously.
The making of solar battery sheet comprises the techniques such as chemical cleaning and surface-texturing process → diffusion → periphery etching and dephosphorization silex glass → depositing antireflection film → print electrode → sinter successively, and the concrete effect of each technique is as follows:
Chemical cleaning and surface-texturing process, namely make the silicon chip surface of light originally form scraggly structure, to increase the absorption of light by chemical reaction;
Diffusion, that is, by after spreading P-type silicon sheet, surface becomes N-type, forms PN junction, makes silicon chip have photovoltaic effect;
Periphery etching and dephosphorization silex glass, stay when the object of this technique is to remove diffusion that silicon chip edge formed by the conductive layer of PN junction two terminal shortcircuit, then cross HF groove, remove the phosphorosilicate glass formed in diffusion technology;
Depositing antireflection film, mainly contain and comprise two class antireflective coatings, be i.e. silicon nitride film and oxidation titanium film, Main Function is passivation and antireflective;
Print electrode, comprise front electrode printing, backplate printing and the printing of back of the body electric field;
Sintering, that is, make the process forming alloy between the electrode of printing and silicon chip.
In the manufacturing process of above-mentioned solar battery sheet, diffusion is core process when making solar battery sheet, because this technique forms PN junction, the efficiency of size to whole solar battery sheet of inspection diffusion square serves vital effect, therefore, if it is defective to record diffusion square after diffusion, then to the important step also becoming and improve whole efficiency of doing over again of defective diffusion square.
Current diffusion technology mostly adopts and spreads back-to-back, but the back side (should not carry out the one side spread) also can spread some phosphorus, and spreads that square is defective following three kinds of situations:
1) square is spread bigger than normal;
2) square is spread less than normal;
3) unevenness spreading square is excessive.
For the 1st) plant situation, existing reworking method continues diffusion when doing over again, for the 2nd) and 3) plant situation, do over again with reverse side after normally adopting four groove HF to clean.
But, do over again with reverse side after cleaning according to four groove HF, the phosphorus in back side diffusion is had no idea to remove, and the unevenness by increasing square is spread again to underproof diffusion square.
Summary of the invention
The embodiment of the present invention provides a kind of reworking method of defective polycrystalline diffusion square resistance, thoroughly to remove the phosphorus on diffusingsurface, makes diffusion square become even.
The embodiment of the present invention provides a kind of reworking method of defective polycrystalline diffusion square resistance, said method comprising the steps of: (1) configures the etching liquid mixed by sulfuric acid, nitric acid and hydrofluoric acid, the consumption of described sulfuric acid is 50 ~ 100L, the concentration of described sulfuric acid to be mass fraction be 98% the industrial concentrated sulfuric acid, the consumption of described nitric acid and hydrofluoric acid is 300L, the concentration of described nitric acid is 300 ~ 550g/L, and the concentration of described hydrofluoric acid is 20 ~ 60g/L; (2) containing described etching liquid into temperature is the cell body of 5 ~ 20 DEG C; (3) defective polycrystalline diffusion square resistance is inserted described etching liquid and carry out back of the body corrosion, the drift velocity of described defective polycrystalline diffusion square resistance in described etching liquid is 0.8 ~ 2m/min.
Alternatively, describedly defective polycrystalline diffusion square resistance is inserted described etching liquid and carry out back of the body corrosion and comprise: described defective polycrystalline diffusion square resistance face down is inserted described etching liquid and carry out the back of the body and corrode.
Alternatively, describedly defective polycrystalline diffusion square resistance is inserted described etching liquid and carry out back of the body corrosion and comprise: described defective polycrystalline diffusion square resistance is faced up and inserts described etching liquid and carry out the back of the body and corrode.
Alternatively, the consumption configuring described sulfuric acid during described etching liquid is 80L.
Alternatively, the concentration configuring described nitric acid during described etching liquid is 400g/L, and the concentration of described hydrofluoric acid is 30g/L.
Alternatively, the cell body that to contain into temperature by described etching liquid be 5 ~ 20 DEG C is specially: being contained by described etching liquid into temperature is the cell body of 8 DEG C.
Alternatively, carrying out the drift velocity of described defective polycrystalline diffusion square resistance in described etching liquid when the back of the body corrodes is 1.3m/min.
Alternatively, the consumption configuring described sulfuric acid during described etching liquid is 80L, the concentration of described nitric acid is 400g/L, the concentration of described hydrofluoric acid is 30g/L, the described cell body that to contain into temperature by described etching liquid be 5 ~ 20 DEG C is specially: being contained by described etching liquid into temperature is the cell body of 8 DEG C, described in when carrying out the back of the body corrosion drift velocity of described defective polycrystalline diffusion square resistance in described etching liquid be 1.3m/min.
From the reworking method of the defective polycrystalline diffusion square resistance that the invention described above embodiment provides, because said method defective polycrystalline diffusion square resistance is inserted the etching liquid configured by sulfuric acid, nitric acid and hydrofluoric acid carry out back of the body corrosion, to remove the effect of silicon chip back side and side phosphorus, remove phosphorosilicate glass simultaneously.Therefore, compared with doing over again with reverse side after adopting four groove HF to clean with prior art, the method that the embodiment of the present invention provides can remove the phosphorus in defective polycrystalline diffusion square resistance front or back side diffusion effectively, make the defective polycrystalline diffusion square resistance when doing over again have a clean diffusingsurface, follow-up when re-starting diffusion the uniformity of square higher.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, be briefly described to the required accompanying drawing used in prior art or embodiment description below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those skilled in the art, other accompanying drawing can also be obtained as these accompanying drawings.
Fig. 1 is the reworking method schematic flow sheet of a kind of defective polycrystalline diffusion square resistance that the embodiment of the present invention provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those skilled in the art obtain, all belongs to the scope of protection of the invention.
Refer to accompanying drawing 1, be the reworking method schematic flow sheet of a kind of defective polycrystalline diffusion square resistance that the embodiment of the present invention provides, mainly comprise step:
S101, configure the etching liquid mixed by sulfuric acid, nitric acid and hydrofluoric acid, the consumption of described sulfuric acid is 50 ~ 100L, the concentration of described sulfuric acid to be mass fraction be 98% the industrial concentrated sulfuric acid, the consumption of described nitric acid and hydrofluoric acid is 300L, the concentration of described nitric acid is 300 ~ 550g/L, and the concentration of described hydrofluoric acid is 20 ~ 60g/L.
S102, being contained by described etching liquid into temperature is the cell body of 5 ~ 20 DEG C.
In embodiments of the present invention, can will configure etching liquid is contained in the descaling bath cell body of chain type low temperature pickler in step S101, such as, can will configure etching liquid is contained in the descaling bath cell body of chain type low temperature pickler of Rena manufacturer production in step S101.The temperature-controllable of cell body is within 5 ~ 20 DEG C.
S103, inserts described etching liquid by defective polycrystalline diffusion square resistance and carries out back of the body corrosion, and the drift velocity of described defective polycrystalline diffusion square resistance in described etching liquid is 0.8 ~ 2m/min.
In embodiments of the present invention, so-called defective polycrystalline diffusion square resistance refers to that polysilicon chip is after having carried out polycrystalline diffusion technology, after tested personnel's detection, testing result does not meet the diffusion square resistance of related request, when carrying out diffusion technology, its front (carrying out the one side of diffusion technology) and the back side (not carrying out the one side of diffusion technology, relative with the one side of carrying out diffusion technology) has also spread a certain amount of phosphorus.When defective polycrystalline diffusion square resistance being inserted etching liquid and carrying out back of the body corrosion, its drift velocity in described etching liquid can be controlled at 0.8 ~ 2m/min, back of the body corrosion fully can be carried out.Particularly, the belt speed of the chain type low temperature pickler of Rena manufacturer production can be controlled at 0.8 ~ 2m/min.
As one embodiment of the invention, defective polycrystalline diffusion square resistance being inserted etching liquid, to carry out back of the body corrosion can be described defective polycrystalline diffusion square resistance face down is inserted described etching liquid to carry out the back of the body and corrode, thus thoroughly washing the phosphorus of this polycrystalline diffusion square resistance front diffusion when carrying out diffusion technology, follow-up diffusion technology uses the front having washed phosphorus to spread.
As another embodiment of the present invention, defective polycrystalline diffusion square resistance being inserted etching liquid, to carry out back of the body corrosion can be faced up by described defective polycrystalline diffusion square resistance to insert described etching liquid and carry out the back of the body and corrode, thus thoroughly washing the phosphorus of this polycrystalline diffusion square resistance back side diffusion when carrying out diffusion technology, follow-up diffusion technology uses the back side having washed phosphorus to spread.
In embodiments of the present invention, when configuring the etching liquid mixed by sulfuric acid, nitric acid and hydrofluoric acid, the consumption of sulfuric acid can be 80L, the consumption of nitric acid and hydrofluoric acid is 300L, the concentration of nitric acid is 300 ~ 550g/L, the concentration of hydrofluoric acid is 20 ~ 60g/L, and cell body temperature controls at 5 ~ 20 DEG C, and the drift velocity of defective polycrystalline diffusion square resistance in described etching liquid controls at 0.8 ~ 2m/min.
In an alternative embodiment of the invention, when configuring the etching liquid mixed by sulfuric acid, nitric acid and hydrofluoric acid, the consumption of sulfuric acid can be 80L, the consumption of nitric acid and hydrofluoric acid is 300L, the concentration of nitric acid is 400g/L, the concentration of hydrofluoric acid is 30g/L, and cell body temperature controls at 5 ~ 20 DEG C, and the drift velocity of defective polycrystalline diffusion square resistance in described etching liquid controls at 0.8 ~ 2m/min.
In an alternative embodiment of the invention, when configuring the etching liquid mixed by sulfuric acid, nitric acid and hydrofluoric acid, the consumption of sulfuric acid can be 80L, the consumption of nitric acid and hydrofluoric acid is 300L, the concentration of nitric acid is 300 ~ 550g/L, the concentration of hydrofluoric acid is 20 ~ 60g/L, and cell body temperature controls at 8 DEG C, and the drift velocity of defective polycrystalline diffusion square resistance in described etching liquid controls at 0.8 ~ 2m/min.
In an alternative embodiment of the invention, when configuring the etching liquid mixed by sulfuric acid, nitric acid and hydrofluoric acid, the consumption of sulfuric acid can be 80L, the consumption of nitric acid and hydrofluoric acid is 300L, the concentration of nitric acid is 300 ~ 550g/L, the concentration of hydrofluoric acid is 20 ~ 60g/L, and cell body temperature controls at 5 ~ 20 DEG C, and the drift velocity of defective polycrystalline diffusion square resistance in described etching liquid controls at 1.3m/min.
In another preferred embodiment of the present invention, when configuring the etching liquid mixed by sulfuric acid, nitric acid and hydrofluoric acid, the consumption of sulfuric acid can be 80L, the consumption of nitric acid and hydrofluoric acid is 300L, the concentration of nitric acid is 400g/L, the concentration of hydrofluoric acid is 30g/L, and cell body temperature controls at 8 DEG C, and the drift velocity of defective polycrystalline diffusion square resistance in described etching liquid controls at 1.3m/min.
From the reworking method of the defective polycrystalline diffusion square resistance that the invention described above embodiment provides, because said method defective polycrystalline diffusion square resistance is inserted the etching liquid configured by sulfuric acid, nitric acid and hydrofluoric acid carry out back of the body corrosion, to remove the effect of silicon chip back side and side phosphorus, remove phosphorosilicate glass simultaneously.Therefore, compared with doing over again with reverse side after adopting four groove HF to clean with prior art, the method that the embodiment of the present invention provides can remove the phosphorus in defective polycrystalline diffusion square resistance front or back side diffusion effectively, make the defective polycrystalline diffusion square resistance when doing over again have a clean diffusingsurface, follow-up when re-starting diffusion the uniformity of square higher.
In order to the effect of the method that the reworking method method of defective polycrystalline provided by the invention diffusion square resistance provides with prior art is clearly described, time below to configure the etching liquid mixed by sulfuric acid, nitric acid and hydrofluoric acid, the consumption of sulfuric acid is 80L, the consumption of nitric acid and hydrofluoric acid is 300L, the concentration of nitric acid is 400g/L, the concentration of hydrofluoric acid is 30g/L, cell body temperature control 8 DEG C, defective polycrystalline spreads the drift velocity of square resistance in described etching liquid and controls at 1.3m/min.First group (A group) defective polycrystalline diffusion square is inserted etching liquid and is carried out the back of the body when corroding, face down; Second group (B group) defective polycrystalline diffusion square is inserted etching liquid and is carried out the back of the body when corroding, and faces up; 3rd group (C group) defective polycrystalline diffusion square is done over again with reverse side after employing four groove HF cleans, and washes rear drying, then use the back side to spread as diffusingsurface.
In solar cell making process, qualified its average square (Ω/) of polycrystalline diffusion square is 65 ± 5, and variance is no more than 5, with following table one be do over again before the average square of A, B and C tri-groups defective polycrystalline diffusion square and variance yields thereof.
| Group | Average square (Ω/) | Variance |
| A | 49.23 | 2.21 |
| B | 50.21 | 2.14 |
| C | 49.34 | 1.25 |
Table one
After A, B and C tri-groups defective polycrystalline diffusion square carries out carrying on the back corrosion, carry out spreading the average square and variance yields thereof that record again with following table two.
| Group | Average square (Ω/) | Variance |
| A | 64.59 | 0.95 |
| B | 63.29 | 1.01 |
| C | 63.54 | 1.92 |
Table two
When doing over again, the mean value of the thickness A group of back of the body corrosion etching is 1.23 μm, the mean value of B group is 1.27 μm, and current diffusion technology junction depth at 600nm (0.6 μm) below, therefore, the phosphorus in diffusion can all etch away by the back of the body corrosion that the embodiment of the present invention provides.
Following table three is electrical property contrasts that A, B and C tri-groups defective polycrystalline diffusion square records after doing over again
Table three
From the electrical property contrast shown in above-mentioned table three, the efficiency of A group (namely inserting the defective polycrystalline diffusion square of face down when etching liquid carries out carrying on the back corrosion) back of the body corrosion is best, its electric current and voltage is all more satisfactory, and the voltage of B group (namely inserting heads defective polycrystalline diffusion square when etching liquid carries out carrying on the back corrosion) is also more satisfactory, but electric current is obviously undesirable, its main cause is that it is after the phosphorus thoroughly washing back side diffusion, use the back side having washed phosphorus to spread in follow-up diffusion technology, and the reflectivity at the back side is obviously large than front; The C group not only uniformity is bad, and little obviously than A group of its electric current.
Above the reworking method of the defective polycrystalline diffusion square resistance that the embodiment of the present invention provides is described in detail, apply specific case herein to set forth principle of the present invention and execution mode, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (6)
1. a reworking method for defective polycrystalline diffusion square resistance, is characterized in that, said method comprising the steps of:
(1) etching liquid mixed by sulfuric acid, nitric acid and hydrofluoric acid is configured, the consumption of described sulfuric acid is 50 ~ 100L, the concentration of described sulfuric acid to be mass fraction be 98% the industrial concentrated sulfuric acid, the consumption of described nitric acid and hydrofluoric acid is 300L, the concentration of described nitric acid is 300 ~ 550g/L, and the concentration of described hydrofluoric acid is 20 ~ 60g/L;
(2) containing described etching liquid into temperature is the cell body of 5 ~ 20 DEG C;
(3) defective polycrystalline diffusion square resistance is inserted described etching liquid and carry out back of the body corrosion, the drift velocity of described defective polycrystalline diffusion square resistance in described etching liquid is 0.8 ~ 2m/min;
Wherein, describedly defective polycrystalline diffusion square resistance is inserted described etching liquid and carries out back of the body corrosion and comprise:
Described defective polycrystalline diffusion square resistance face down is inserted described etching liquid and carries out back of the body corrosion, or described defective polycrystalline diffusion square resistance is faced up insert described etching liquid and carry out the back of the body and corrode.
2. the method for claim 1, is characterized in that, the consumption configuring described sulfuric acid during described etching liquid is 80L.
3. method as claimed in claim 2, it is characterized in that, the concentration configuring described nitric acid during described etching liquid is 400g/L, and the concentration of described hydrofluoric acid is 30g/L.
4. method as claimed in claim 2, is characterized in that, the described cell body that to contain into temperature by described etching liquid be 5 ~ 20 DEG C is specially: being contained by described etching liquid into temperature is the cell body of 8 DEG C.
5. method as claimed in claim 2, is characterized in that, described in when carrying out the back of the body corrosion drift velocity of described defective polycrystalline diffusion square resistance in described etching liquid be 1.3m/min.
6. the method for claim 1, is characterized in that, the consumption configuring described sulfuric acid during described etching liquid is 80L, and the concentration of described nitric acid is 400g/L, and the concentration of described hydrofluoric acid is 30g/L;
The described cell body that to contain into temperature by described etching liquid be 5 ~ 20 DEG C is specially: being contained by described etching liquid into temperature is the cell body of 8 DEG C;
Described when carrying out the back of the body corrosion drift velocity of described defective polycrystalline diffusion square resistance in described etching liquid be 1.3m/min.
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| CN104993014B (en) * | 2015-05-27 | 2017-02-01 | 东方日升新能源股份有限公司 | Individual remaking method of diffused defective sheets |
| CN107546117B (en) * | 2017-08-30 | 2020-08-07 | 平煤隆基新能源科技有限公司 | Treatment process of diffusion sheet resistance abnormal silicon wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4062102A (en) * | 1975-12-31 | 1977-12-13 | Silicon Material, Inc. | Process for manufacturing a solar cell from a reject semiconductor wafer |
| CN101622697A (en) * | 2007-01-22 | 2010-01-06 | Gp太阳能有限公司 | Etching solution and etching method |
| CN102185022A (en) * | 2011-03-31 | 2011-09-14 | 南京沙宁申光伏有限公司 | Method for manufacturing solar cell |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4062102A (en) * | 1975-12-31 | 1977-12-13 | Silicon Material, Inc. | Process for manufacturing a solar cell from a reject semiconductor wafer |
| CN101622697A (en) * | 2007-01-22 | 2010-01-06 | Gp太阳能有限公司 | Etching solution and etching method |
| CN102185022A (en) * | 2011-03-31 | 2011-09-14 | 南京沙宁申光伏有限公司 | Method for manufacturing solar cell |
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Granted publication date: 20150930 Termination date: 20211117 |