CN104638024A - Lateral current regulative diode based on SIO (Silicon-On-Insulator) and manufacturing method thereof - Google Patents
Lateral current regulative diode based on SIO (Silicon-On-Insulator) and manufacturing method thereof Download PDFInfo
- Publication number
- CN104638024A CN104638024A CN201510081821.7A CN201510081821A CN104638024A CN 104638024 A CN104638024 A CN 104638024A CN 201510081821 A CN201510081821 A CN 201510081821A CN 104638024 A CN104638024 A CN 104638024A
- Authority
- CN
- China
- Prior art keywords
- doped region
- type
- heavily doped
- type heavily
- soi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000012212 insulator Substances 0.000 title description 3
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- 239000001301 oxygen Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 230000001413 cellular effect Effects 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000012190 activator Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 230000002411 adverse Effects 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 description 9
- 238000004088 simulation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
The invention provides a lateral current regulative diode and a manufacturing method thereof and belongs to the technical field of semiconductor power devices. The lateral current regulative diode based on the SOI is formed by connecting a plurality of cell interdigitals with the same structure, wherein each cell comprise a substrate, N-type lightly doped silicon, a P-type heavily doped region, an N-type heavily doped region, a dielectric oxide layer, a metal cathode, a metal anode, a P-type doped region and a buried oxide layer, wherein each P-type heavily doped region is positioned between the corresponding N-type heavily doped region and P-type doped region; each N-type heavily doped region is partially contained in the corresponding P-type heavily doped region; each N-type heavily doped region is in short circuit with the corresponding P-type heavily doped region and forms ohm contact with the corresponding metal cathode; each P-type doped region and the corresponding metal anode form ohm contact. According to the lateral current regulative diode provided by the invention, by the adoption of a PN junction short circuit structure, the area of a chip can be reduced, and the cost is reduced; meanwhile, by the adoption of an SOI technology, adverse influence from leakage current of the substrate in a cluster system can be effectively prevented.
Description
Technical field
The invention belongs to semiconductor power device technology field, be specifically related to a kind of horizontal current regulator diode based on SOI and manufacture method thereof.
Background technology
Constant-current source is a kind of conventional electronic equipment and device, uses quite extensive in electronic circuit.Constant-current source, for the protection of whole circuit, even if there is the situation that spread of voltage or load resistance alter a great deal, can guarantee the stable of supply current.Current regulator diode (CRD, Current Regulative Diode) be a kind of semiconductor constant current device, namely the common constant-current source be made up of multiple elements such as transistor, voltage-stabiliser tube and resistance is replaced with diode as constant-current source, the output current of current current regulator diode is between several milliamperes to tens milliamperes, can Direct driver load, achieve the objects such as circuit structure is simple, device volume is little, device reliability is high.The peripheral circuit of current regulator diode is very simple in addition, easy to use, has been widely used in the fields such as automatic control, instrument, protective circuit.But a puncture voltage high position for current current regulator diode is commonly 30 ~ 100V, therefore there is the problem that puncture voltage is lower, the constant current that simultaneously can provide is also lower.
Summary of the invention
The present invention is directed to the problems such as current regulator diode pinch-off voltage is high, breakdown potential is forced down, constant current ability, propose a kind of horizontal current regulator diode based on SOI and manufacture method thereof.Horizontal current regulator diode based on SOI provided by the invention adopts the structure of PN junction short circuit, chip area can be reduced, reduce costs, reduce chip area when constant current size is identical and be equivalent to the current density improving chip, thus the constant current ability of device is improved; The present invention adopts SOI (Silicon-On-Insulator, silicon in dielectric substrate) technology, effectively can prevent the adverse effect that substrate leakage current in an integrated system brings, double carriers can be utilized to conduct electricity simultaneously, add the current density of device, make the linear zone of device more precipitous, pinch-off voltage is at below 5V.
Technical scheme of the present invention is as follows:
A kind of horizontal current regulator diode based on SOI, be connected to form by the cellular that multiple structure is identical is interdigital, described cellular comprises substrate 2, N-type lightly-doped silicon 3, P type heavily doped region 4, N-type heavily doped region 5, oxide isolation layer 6, metallic cathode 7, metal anode 8, P type doped region 9, oxygen buried layer 10 on insulating barrier; Described oxygen buried layer 10 is positioned on substrate 2, described N-type lightly-doped silicon 3 is positioned on oxygen buried layer 10, described P type heavily doped region 4, N-type heavily doped region 5 and P type doped region 9 are positioned among N-type lightly-doped silicon 3, described P type heavily doped region 4 is between N-type heavily doped region 5 and P type doped region 9, described N-type heavily doped region 5 part is contained among P type heavily doped region 4, described N-type heavily doped region 5 is with P type heavily doped region 4 short circuit and form ohmic contact with metallic cathode 7, and described P type doped region 9 forms ohmic contact with metal anode 8.
Further, the heavily doped region of N-type described in cellular 5 can also all be contained among P type heavily doped region 4.
Further, the metallic cathode 7 in described cellular and metal anode 8 can extend to form field plate along oxide isolation layer 6 upper surface, the adjustable in length of field plate, with the withstand voltage making device reach better constant current ability and Geng Gao.
Further, described N-type heavily doped region 5 is identical with the junction depth of P type doped region 9.
Further, described N-type heavily doped region 5, P type doped region 9 are all identical with the junction depth of P type heavily doped region 4.
Further, the described horizontal current regulator diode based on SOI is connected to form by identical cellular is interdigital, and wherein, adjacent P type doped region 9 and metal anode 8 can share, and adjacent N-type heavily doped region 5 and metallic cathode 7 can share or not share.
Further, the described horizontal current regulator diode semi-conducting material used based on SOI is silicon or carborundum etc.
Further, describedly correspondingly can become contrary doping based on each doping type in the horizontal current regulator diode of SOI, while namely the doping of P type becomes N-type doping, N-type doping becomes the doping of P type.
Further, the length of the described horizontal current regulator diode P type heavily doped region 4 based on SOI can regulate, and is optimized with the constant current ability and pinch-off voltage that make device; Distance between described P type heavily doped region 4 and P type doped region 9 can regulate, and obtains different withstand voltages to make device.
The manufacture method of the above-mentioned horizontal current regulator diode based on SOI, comprises the following steps:
Step 1: adopt soi wafer as substrate, carries out P type heavily doped region 4 and injects front pre-oxygen, carry out opening etch;
Step 2: carry out P type heavily doped region 4 and inject, then carries out P type heavily doped region 4 knot, etches unnecessary oxide layer;
Step 3: carry out N-type heavily doped region 5 and inject front pre-oxygen, carry out opening etch;
Step 4: carry out N-type heavily doped region 5 and inject, etch unnecessary oxide layer;
Step 5: carry out P type doped region 9 and inject front pre-oxygen, carry out opening etch;
Step 6: carry out P type doped region 9 and inject, etch unnecessary oxide layer, described P type heavily doped region 4 is between N-type heavily doped region 5 and P type doped region 9;
Step 7: pre-oxygen before deposit, deposited oxide, fine and close;
Step 8: photoetching ohm hole;
Step 9: deposited metal, etching, forms metallic cathode 8 and metal anode 9.
For shallow junction P type heavily doped region 4, the manufacture method of the above-mentioned horizontal current regulator diode based on SOI, comprises the following steps:
Step 1: adopt soi wafer as substrate, carries out P type heavily doped region 4 and front pre-oxygen is injected in P type doped region 9, carries out opening etch;
Step 2: carry out P type heavily doped region 4 and P type doped region 9 is injected, etches unnecessary oxide layer;
Step 3: carry out N-type heavily doped region 5 and inject front pre-oxygen, carry out opening etch;
Step 4: carry out N-type heavily doped region 5 and inject, etch unnecessary oxide layer, described P type heavily doped region 4 is between N-type heavily doped region 5 and P type doped region 9;
Step 5: pre-oxygen before deposit, deposited oxide, fine and close, activator impurity atom simultaneously;
Step 6: photoetching ohm hole;
Step 7: deposited metal, etching, forms metallic cathode 8 and metal anode 9.
For shallow junction P type heavily doped region 4 and P type heavily doped region 4 and P type doped region 9 apart from longer device, the knot process of P type heavily doped region 4 can be omitted, but take larger Implantation Energy, even if for same Implantation Energy, the junction depth injecting boron is also dark than the junction depth injecting phosphorus, the activation of p type impurity atom can activate in the process of step 5 densification together with the N-type impurity atom of N-type heavily doped region, thus reduces operation, saves the chip manufacturing time.
Beneficial effect of the present invention is:
1, the present invention is based on P type heavily doped region 4 and N-type heavily doped region 5 short circuit in the horizontal current regulator diode of SOI and define PN junction short-circuit structure, substantially reduce the area of device under equal constant current size, improve the current density of device, improve the constant current ability of device.
2, the present invention adopts SOI (Silicon-On-Insulator, the silicon in dielectric substrate) technology, substrate arranges oxygen buried layer, effectively can prevent the adverse effect that substrate leakage current in integrated system brings.
3, the horizontal current regulator diode that the present invention is based on SOI adopts two kinds of charge carrier conductions, increases the current density of device, improves the constant current ability of device; Make the linear zone of device more precipitous, pinch-off voltage is at below 5V.
4, the present invention is based on P type heavily doped region 4 in the horizontal current regulator diode of SOI can not knot, is formed, simplify the technique of chip manufacturing together with P type doped region 9; The technique adopted is consistent with BCD technique, is conducive to the integrated of device, can be used in large scale integrated circuit.
Accompanying drawing explanation
Fig. 1 is the structural representation of the horizontal current regulator diode based on SOI provided by the invention;
Fig. 2 is the structural representation of the cellular of the horizontal current regulator diode based on SOI provided by the invention; A () be not for having the structure of Metal field plate; B () is for there being the structure of Metal field plate.
Fig. 3 is the process simulation schematic diagram of the cellular of the embodiment of the present invention;
The current-voltage characteristic curve figure of the horizontal current regulator diode based on SOI that Fig. 4 provides for the embodiment of the present invention;
The process flow diagram of the manufacture method of the horizontal current regulator diode based on SOI that Fig. 5 provides for the embodiment of the present invention;
The process simulation figure based on correspondence in the horizontal current regulator diode manufacture process of SOI that Fig. 6 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples in detail, technical scheme of the present invention is described in detail.
A kind of horizontal current regulator diode based on SOI, the cellular 1 (1), 1 (2), 1 (3) identical by multiple structure ... 1 (i) is interdigital to be connected to form, the number i of cellular can require to regulate according to concrete current capacity, described cellular comprises substrate 2, N-type lightly-doped silicon 3, P type heavily doped region 4, N-type heavily doped region 5, oxide isolation layer 6, metallic cathode 7, metal anode 8, P type doped region 9, oxygen buried layer 10 on insulating barrier, described oxygen buried layer 10 is positioned on substrate 2, described N-type lightly-doped silicon 3 is positioned on oxygen buried layer 10, described P type heavily doped region 4, N-type heavily doped region 5 and P type doped region 9 are positioned among N-type lightly-doped silicon 3, described oxide isolation layer 6, metallic cathode 7 and metal anode 8 cover described first cellular surface, described P type heavily doped region 4 is between N-type heavily doped region 5 and P type doped region 9, described N-type heavily doped region 5 part is contained among P type heavily doped region 4, described N-type heavily doped region 5 and P type heavily doped region 4 short circuit, described N-type heavily doped region 5, P type heavily doped region 4 and metallic cathode 7 form ohmic contact, described P type doped region 9 forms ohmic contact with metal anode 8, spacing is had between described P type doped region 9 and P type heavily doped region 4.
Further, conducting channel is formed between the described horizontal current regulator diode P type heavily doped region 4 based on SOI and oxygen buried layer 10, the width of raceway groove regulates by the junction depth adjusting P type heavily doped region 4, obtains the constant current value of different size and different saturation voltage drops to make device; The length of P type heavily doped region 4 can regulate, and is optimized with the constant current ability and pinch-off voltage that make device; The distance of P type heavily doped region 4 and P type doped region 9 can regulate, and obtains different withstand voltages to make device.
Further, the heavily doped region of N-type described in cellular 5 can also all be contained among P type heavily doped region 4.
Further, described N-type heavily doped region 5 is identical with the junction depth of P type doped region 9, and the junction depth of N-type heavily doped region 5 and P type doped region 9 and the junction depth of P type heavily doped region 4 may be the same or different.
Further, the P type doped region 9 that first intercellular of described interdigital connection is adjacent and metal anode 8 can share, and adjacent N-type heavily doped region 5 and metallic cathode 7 can share or not share.As shown in Fig. 1 (a), N-type heavily doped region 5 part is contained among P type heavily doped region 4, and the P type doped region 9 that first intercellular of described interdigital connection is adjacent and metal anode 8 share, and adjacent N-type heavily doped region 5 and metallic cathode 7 do not share.
Further, described substrate 2 is P type or N-type doping.
Further, the metallic cathode 7 in described cellular and metal anode 8 can extend to form field plate along oxide isolation layer 6 upper surface, the adjustable in length of field plate, with the withstand voltage making device reach better constant current ability and Geng Gao.
Further, the described horizontal current regulator diode based on SOI adopts the structure of P type heavily doped region 4 and N-type heavily doped region 5 short circuit to substantially reduce the area of device under equal constant current size, improves the current density of device.
Further, the described horizontal current regulator diode based on SOI adopts two kinds of charge carrier conductions, and adopts the structure of PN junction short circuit, improves current density and the constant current ability of device.
Further, the P type heavily doped region 4 of the described horizontal current regulator diode based on SOI adopts boron ion implantation, then carries out thermal diffusion knot, by regulate boron implantation dosage, energy and knot time controling form junction depth and the concentration of P type heavily doped region 4.Last deposit forms oxide isolation layer 6 and metal electrode 7,8.
The operation principle of the horizontal current regulator diode based on SOI of the present invention is:
The described horizontal current regulator diode based on SOI is by 1 (1), 1 (2), 1 (3) ... the interdigital connection of the cellular that 1 (i) is identical obtains, and cellular number i can require to carry out adjusted design according to concrete current capacity.Cellular shown in Fig. 2 comprises N-type lightly-doped silicon 3 on substrate 2, insulating barrier, P type heavily doped region 4, N-type heavily doped region 5, oxide isolation layer 6, metallic cathode 7, metal anode 8, P type doped region 9, oxygen buried layer 10.Wherein said P type heavily doped region 4 is between N-type heavily doped region 5 and P type doped region 9, described N-type heavily doped region 5 part is contained among P type heavily doped region 4, described N-type heavily doped region 5 is with P type heavily doped region 4 short circuit and form ohmic contact with metallic cathode 7, and described P type doped region 9 forms ohmic contact with metal anode 8.
The described horizontal current regulator diode metal anode 8 based on SOI connects high potential, metallic cathode 7 connects electronegative potential, at this moment on insulating barrier, the electromotive force of N-type lightly-doped silicon 3 near side, P type doped region 9 is higher, depletion region is formed between P type heavily doped region 4 and oxygen buried layer 10, thus current channel is formed between P type heavily doped region 4 and oxygen buried layer 10, along with applied voltage becomes large, depletion layer thickness constantly thickeies, and depletion layer expansion makes conducting channel narrow.When raceway groove not yet pinch off time, channel resistance is semiconductor resistor, and electric current increases along with the increase of voltage, and now diode operation is in linear zone.When the depletion layer that applied voltage continues to increase to both sides contacts, raceway groove pinch off, anode voltage is now called pinch-off voltage.After raceway groove pinch off, continue to increase anode voltage, pinch-off point is slow with the increase change of anode voltage, and slow down so device current increases, form constant current function, now devices function is in constant current district.The width of raceway groove can be regulated, to obtain the device of different size constant current value by the junction depth adjusting P type heavily doped region 4.
Embodiment
The present embodiment is 200V with withstand voltage, and the horizontal current regulator diode based on SOI that electric current is about 3E-6A/ μm is example, and technical scheme of the present invention is described in detail in detail.
Process simulation is carried out by the structure cell of TSUPREM4 and MEDICI simulation software to the provided horizontal current regulator diode based on SOI as shown in Fig. 2 (b), simulation parameter is: initial silicon wafer thickness is about 250 μm, and on N-type light dope substrate and insulating barrier, N-type lightly-doped silicon concentration is 8E14cm
-3; P type heavily doped region implantation dosage is 4E15cm
-2, Implantation Energy is 60keV; N-type heavily doped region implantation dosage is 4E15cm
-2, Implantation Energy is 60keV; Channel length is about 6 μm; P type doped region implantation dosage is 4E11cm
-2, Implantation Energy is 60keV; The distance of distance P type doped region, P type heavily doped region is about 16 μm; Oxidated layer thickness is about 0.4 μm; Metal deposition thickness is about 2 μm.
Fig. 4 is that the horizontal current regulator diode based on SOI that the embodiment of the present invention provides passes through emulation gained i-v performance diagram.The pinch-off voltage of device is at below 5V as can be seen from Figure 4, and pinch-off voltage regulates by the junction depth adjusting P type heavily doped region 4; When the district's after-current that reaches capacity keeps constant substantially, constant-current characteristics is good.
Fig. 5 is the process flow diagram of the manufacture method of the horizontal current regulator diode based on SOI that the embodiment of the present invention provides, and Fig. 6 is the process simulation figure based on correspondence in the horizontal current regulator diode manufacture process of SOI that the embodiment of the present invention provides.Wherein, (1) is initial silicon chip; (2) for forming P type heavily doped region; (3) for forming N-type heavily doped region; (4) for forming P type doped region; (5) device for finally obtaining.
Claims (10)
1. the horizontal current regulator diode based on SOI, be connected to form by the cellular that multiple structure is identical is interdigital, described cellular comprises substrate (2), N-type lightly-doped silicon (3), P type heavily doped region (4), N-type heavily doped region (5), oxide isolation layer (6), metallic cathode (7), metal anode (8), P type doped region (9), oxygen buried layer (10) on insulating barrier, described oxygen buried layer (10) is positioned on substrate (2), described N-type lightly-doped silicon (3) is positioned on oxygen buried layer (10), described P type heavily doped region (4), N-type heavily doped region (5) and P type doped region (9) are positioned among N-type lightly-doped silicon (3), described P type heavily doped region (4) is positioned between N-type heavily doped region (5) and P type doped region (9), described N-type heavily doped region (5) part is contained among P type heavily doped region (4), described N-type heavily doped region (5) and P type heavily doped region (4) short circuit also form ohmic contact with metallic cathode (7), described P type doped region (9) and metal anode (8) form ohmic contact.
2. the horizontal current regulator diode based on SOI according to claim 1, is characterized in that, described N-type heavily doped region (5) is all contained among P type heavily doped region (4).
3. the horizontal current regulator diode based on SOI according to claim 1, is characterized in that, described metallic cathode (7) and metal anode (8) can extend to form field plate along oxide isolation layer (6) upper surface.
4. the horizontal current regulator diode based on SOI according to claim 1, is characterized in that, described N-type heavily doped region (5) is identical with the junction depth of P type doped region (9).
5. the horizontal current regulator diode based on SOI according to claim 1, is characterized in that, described N-type heavily doped region (5), P type doped region (9) are all identical with the junction depth of P type heavily doped region (4).
6. the horizontal current regulator diode based on SOI according to claim 1, is characterized in that, described adjacent P type doped region (9) and metal anode (8) share.
7. the horizontal current regulator diode based on SOI according to claim 1, is characterized in that, the described horizontal current regulator diode semi-conducting material used based on SOI is silicon or carborundum.
8. the horizontal current regulator diode based on SOI according to claim 1, it is characterized in that, describedly correspondingly can become contrary doping based on each doping type in the horizontal current regulator diode of SOI, while namely the doping of P type becomes N-type doping, N-type doping becomes the doping of P type.
9., based on a manufacture method for the horizontal current regulator diode of SOI, it is characterized in that, comprise the following steps:
Step 1: adopt soi wafer as substrate, carries out P type heavily doped region (4) and injects front pre-oxygen, carry out opening etch;
Step 2: carry out P type heavily doped region (4) and inject, then carry out P type heavily doped region (4) knot, etch unnecessary oxide layer;
Step 3: carry out N-type heavily doped region (5) and inject front pre-oxygen, carry out opening etch;
Step 4: carry out N-type heavily doped region (5) and inject, etch unnecessary oxide layer;
Step 5: carry out P type doped region (9) and inject front pre-oxygen, carry out opening etch;
Step 6: carry out P type doped region (9) and inject, etch unnecessary oxide layer, described P type heavily doped region (4) is positioned between N-type heavily doped region (5) and P type doped region (9);
Step 7: pre-oxygen before deposit, deposited oxide, fine and close;
Step 8: photoetching ohm hole;
Step 9: deposited metal, etching, forms metallic cathode (8) and metal anode (9).
10., based on a manufacture method for the horizontal current regulator diode of SOI, comprise the following steps:
Step 1: adopt soi wafer as substrate, carries out P type heavily doped region (4) and front pre-oxygen is injected in P type doped region (9), carries out opening etch;
Step 2: carry out P type heavily doped region (4) and P type doped region (9) injection, etch unnecessary oxide layer;
Step 3: carry out N-type heavily doped region (5) and inject front pre-oxygen, carry out opening etch;
Step 4: carry out N-type heavily doped region (5) and inject, etch unnecessary oxide layer, described P type heavily doped region (4) is positioned between N-type heavily doped region (5) and P type doped region (9);
Step 5: pre-oxygen before deposit, deposited oxide, fine and close, activator impurity atom simultaneously;
Step 6: photoetching ohm hole;
Step 7: deposited metal, etching, forms metallic cathode (8) and metal anode (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510081821.7A CN104638024B (en) | 2015-02-15 | 2015-02-15 | A kind of horizontal current regulator diode and its manufacture method based on SOI |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510081821.7A CN104638024B (en) | 2015-02-15 | 2015-02-15 | A kind of horizontal current regulator diode and its manufacture method based on SOI |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104638024A true CN104638024A (en) | 2015-05-20 |
| CN104638024B CN104638024B (en) | 2018-01-12 |
Family
ID=53216539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510081821.7A Active CN104638024B (en) | 2015-02-15 | 2015-02-15 | A kind of horizontal current regulator diode and its manufacture method based on SOI |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104638024B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170728A (en) * | 2017-06-02 | 2017-09-15 | 朝阳无线电元件有限责任公司 | A kind of current regulator diode design and manufacturing technology |
| CN110491889A (en) * | 2019-09-17 | 2019-11-22 | 成都矽能科技有限公司 | A kind of SOI transverse direction current regulator diode and its manufacturing method |
| CN110518064A (en) * | 2019-09-06 | 2019-11-29 | 电子科技大学 | A kind of semiconductor devices and its manufacturing method |
| CN110534581A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | A kind of semiconductor devices and its manufacturing method |
| CN110556387A (en) * | 2019-09-07 | 2019-12-10 | 电子科技大学 | Bidirectional constant current device based on SOI |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201066691Y (en) * | 2007-01-15 | 2008-05-28 | 贵州大学 | N channel high-power semiconductor constant current diode |
| CN103400863A (en) * | 2013-07-03 | 2013-11-20 | 电子科技大学 | Transverse constant current diode |
| KR20140070232A (en) * | 2012-11-30 | 2014-06-10 | (주)페가테크 | Current Regulative Diode Device And Manufacturing Method Thereof, Cell Type Array Device Of Current Regulative |
| US8816355B2 (en) * | 2010-04-08 | 2014-08-26 | Hitachi, Ltd. | Semiconductor device |
-
2015
- 2015-02-15 CN CN201510081821.7A patent/CN104638024B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201066691Y (en) * | 2007-01-15 | 2008-05-28 | 贵州大学 | N channel high-power semiconductor constant current diode |
| US8816355B2 (en) * | 2010-04-08 | 2014-08-26 | Hitachi, Ltd. | Semiconductor device |
| KR20140070232A (en) * | 2012-11-30 | 2014-06-10 | (주)페가테크 | Current Regulative Diode Device And Manufacturing Method Thereof, Cell Type Array Device Of Current Regulative |
| CN103400863A (en) * | 2013-07-03 | 2013-11-20 | 电子科技大学 | Transverse constant current diode |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170728A (en) * | 2017-06-02 | 2017-09-15 | 朝阳无线电元件有限责任公司 | A kind of current regulator diode design and manufacturing technology |
| CN110518064A (en) * | 2019-09-06 | 2019-11-29 | 电子科技大学 | A kind of semiconductor devices and its manufacturing method |
| CN110534581A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | A kind of semiconductor devices and its manufacturing method |
| CN110518064B (en) * | 2019-09-06 | 2023-04-25 | 电子科技大学 | Semiconductor device and manufacturing method thereof |
| CN110556387A (en) * | 2019-09-07 | 2019-12-10 | 电子科技大学 | Bidirectional constant current device based on SOI |
| CN110556387B (en) * | 2019-09-07 | 2022-02-08 | 电子科技大学 | Bidirectional constant current device based on SOI |
| CN110491889A (en) * | 2019-09-17 | 2019-11-22 | 成都矽能科技有限公司 | A kind of SOI transverse direction current regulator diode and its manufacturing method |
| CN110491889B (en) * | 2019-09-17 | 2024-03-29 | 成都矽能科技有限公司 | SOI transverse constant current diode and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104638024B (en) | 2018-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108198851B (en) | Super-junction IGBT with carrier storage effect | |
| CN110459599B (en) | Longitudinal floating field plate device with deep buried layer and manufacturing method | |
| CN101877358B (en) | Transient voltage suppressor having symmetrical breakdown voltages | |
| CN104779303B (en) | A kind of vertical current regulative diode and its manufacture method | |
| US9685523B2 (en) | Diode structures with controlled injection efficiency for fast switching | |
| CN103441148B (en) | A kind of groove grid VDMOS device of integrated schottky diode | |
| US20120193676A1 (en) | Diode structures with controlled injection efficiency for fast switching | |
| CN103632974B (en) | P-type LDMOS surface channel component improves the manufacture method of inner evenness | |
| CN104638023B (en) | A kind of vertical current regulative diode | |
| CN103887331B (en) | VLD terminal of high pressure IGBT device and preparation method thereof | |
| CN104638024B (en) | A kind of horizontal current regulator diode and its manufacture method based on SOI | |
| CN102969245B (en) | A kind of inverse conductivity type integrated gate commutated thyristor manufacture method | |
| CN102569298A (en) | Semiconductor device including diode | |
| CN108155225B (en) | Constant current device and manufacturing method thereof | |
| CN104638021B (en) | A kind of horizontal current regulator diode and its manufacture method | |
| CN106783984A (en) | A kind of two-sided terminal structure, inverse conductivity type semiconductor devices and preparation method thereof | |
| CN105405873A (en) | Semiconductor device and manufacturing method thereof | |
| CN104638022B (en) | A kind of SOI transverse directions current regulator diode and its manufacture method | |
| CN103441151B (en) | Low forward voltage drop diode | |
| CN104253152A (en) | IGBT (insulated gate bipolar transistor) and manufacturing method thereof | |
| CN113066865A (en) | Semiconductor device for reducing switching loss and manufacturing method thereof | |
| CN104638020A (en) | Epitaxial layer-based vertical current regulative diode and manufacturing method thereof | |
| CN210092081U (en) | Constant current device | |
| CN104253154A (en) | IGBT (insulated gate bipolar transistor) with inlaid diode and manufacturing method of IGBT | |
| CN106252400A (en) | A kind of thick film SOI LIGBT device and the raising method of latch-up immunity thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230111 Address after: 310051 1-1201, No. 6, Lianhui street, Xixing street, Binjiang District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou Xinmai Semiconductor Technology Co.,Ltd. Address before: 611731, No. 2006, West Avenue, Chengdu hi tech Zone (West District, Sichuan) Patentee before: University of Electronic Science and Technology of China |
|
| TR01 | Transfer of patent right |