CN102064201B - Shallow-slot metal oxide semiconductor diode - Google Patents
Shallow-slot metal oxide semiconductor diode Download PDFInfo
- Publication number
- CN102064201B CN102064201B CN201010519680A CN201010519680A CN102064201B CN 102064201 B CN102064201 B CN 102064201B CN 201010519680 A CN201010519680 A CN 201010519680A CN 201010519680 A CN201010519680 A CN 201010519680A CN 102064201 B CN102064201 B CN 102064201B
- Authority
- CN
- China
- Prior art keywords
- shallow slot
- oxide
- semiconductor diode
- metal
- dark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a shallow-slot metal oxide semiconductor diode for solving reducing the forward conduction voltage drop of the diode, increasing reverse breakdown voltage and reducing leakage current. The shallow-slot metal oxide semiconductor diode provided by the invention comprises a metallized cathode, an N-type heavily-doped monocrystalline silicon substrate region, an N-epitaxial layer, two deep P regions located on two sides, shallow slots located on the deep P regions, N-type heavily-doped regions on the inner sides of the shallow slots, a silicon dioxide gate oxide layer, a polycrystalline silicon gate electrode and a metallized anode, which are arranged in sequence from the bottom layer to the top. Compared with the prior art, by adopting the electron accumulation layer structure and the junction field-effect tube structure, the invention can obtain extremely low conduction voltage drop, greatly improve the breakdown voltage, and reduce the leakage current. Under reverse voltage, the thin gate oxide layer accelerates the pinch-off of a conducting channel on a semiconductor surface, and the compromise between forward conduction voltage drop and reverse recovery time is better realized, and therefore, the shallow-slot metal oxide semiconductor diode provided by the invention has better compromise between forward conduction voltage drop and reverse recovery time.
Description
Technical field
The present invention relates to a kind of semiconductor device, particularly a kind of metal-oxide-semiconductor diode.
Background technology
In electronic circuit, diode is one of the most frequently used base electronic components and parts; In Power Electronic Circuit, diode is more followed someone like his shadow with switching device, and is indispensable.Traditional rectifier diode mainly contains PN junction diode and Schottky diode two classes.Wherein PN junction diode forward conduction voltage drop is bigger, and reverse recovery time is longer, but the stability of PN junction diode better, can work in high voltage; Schottky diode has absolute predominance when low-voltage: its forward conduction voltage drop is little, and reverse recovery time is short, but the leakage current when Schottky diode is reverse is higher relatively, and unstable.In order to improve diode behavior, Junction Barrier Controlled rectifier JBS (JBS:Junction Barrier Controlled Schottky Rectifier) has been proposed both at home and abroad, mix PiN/ Schottky rectifier MPS (MPS:Merged P-i-N/Schottky Rectifier), MOS control diode MCD devices such as (MCD:MOS Controlled Diode).
Fast recovery diode (being called for short FRD) is a kind of semiconductor diode that switching characteristic is good, lack characteristics reverse recovery time that has, be mainly used in the electronic circuits such as Switching Power Supply, PWM pulse width modulator, frequency converter, use as high-frequency rectification diode, fly-wheel diode or damper diode.The internal structure of fast recovery diode is different with common PN junction diode, and it belongs to the PiN junction diode, has promptly increased base i in the middle of P type silicon materials and N type silicon materials, constitutes the PiN silicon chip.Because of the base is very thin, QRR is very little, so the reverse recovery time of fast recovery diode is shorter, forward voltage drop is lower, and reverse breakdown voltage (withstand voltage) is higher.Fast recovery diode adopts gold doping on manufacturing process, simple technologies such as diffusion can obtain higher switching speed, also can obtain simultaneously higher withstand voltage.Be generally hundreds of nanosecond the reverse recovery time of fast recovery diode, and forward voltage drop is about 0.7V, and forward current is several amperes of extremely several kiloamperes, and peak-inverse voltage can reach hundreds of to several kilovolts.The QRR of Ultrafast recovery diode further reduces, and makes to be low to moderate for tens nanoseconds its reverse recovery time.
Schottky diode is the abbreviation of Schottky barrier diode (Schottky Barrier Diode abbreviates SBD as).Schottky diode is the low-power consumption of coming out in recent years, big electric current, ultra-speed semiconductor device.Schottky diode does not utilize P type semiconductor to contact with N type semiconductor to form the PN junction principle makes, but utilizes metal contact the metal-semiconductor junction principle making of formation with semiconductor.Schottky Rectifier is only used a kind of charge carrier (electronics) delivered charge, and therefore the accumulation at the no excess minority carrier in the potential barrier outside, does not exist Charge Storage problem (Qrr → 0), shows when switching characteristic is obtained and improves.Extremely lack its reverse recovery time (may diminish to several nanoseconds), forward conduction voltage drop is only about 0.4V, and rectified current can reach several thousand milliamperes.These good characteristics are that fast recovery diode is incomparable.Because the reverse potential barrier of Schottky diode is thinner, and very easily punctures on its surface, so reverse breakdown voltage is lower, oppositely withstand voltage is lower, scarcely is higher than 60V, and the highest only about 100V is so that limited its range of application.Because Schottky diode is subjected to thermal breakdown than PN junction diode is easier, reverse leakage current is bigger than PN junction diode.
Summary of the invention
The purpose of this invention is to provide a kind of shallow slot metal-oxide-semiconductor diode, the technical problem that solve is to reduce the forward conduction voltage drop of diode, improves reverse breakdown voltage and reduces leakage current.
The present invention is by the following technical solutions: a kind of shallow slot metal-oxide-semiconductor diode, the physical structure of described shallow slot metal-oxide-semiconductor diode up is metallization negative electrode, N type heavy doping monocrystalline substrate district, N from bottom successively
-Epitaxial loayer, be positioned at both sides two dark P tagmas, be positioned at shallow slot, the N type heavily doped region of shallow slot inboard, silicon dioxide gate oxide, polygate electrodes, metallization anode on the dark P tagma; Described metallization anode and shallow slot, N type heavily doped region and polygate electrodes short circuit; Described two dark P tagmas and the N between it
-Epitaxial loayer constitutes the junction field effect transistor district, and dark P tagma is by shallow slot and metallization anode short circuit; Described N type heavily doped region, silicon dioxide gate oxide, polygate electrodes and N
-Epitaxial loayer constitutes the electron accumulation layer structure.
The doping content in dark P of the present invention tagma is greater than N
-Two orders of magnitude of the doping content of epitaxial loayer.
Shallow slot groove depth of the present invention is 0.7 μ m.
Shallow slot of the present invention is metallized the anode complete filling.
Dark P of the present invention tagma cross sectional shape is rectangle, arc, semicircle, trapezoidal or oval.
Silicon dioxide gate oxide thickness scope of the present invention is 5 to 100nm.
Between N type heavily doped region of the present invention and the dark P tagma is N
-Epitaxial loayer.
Polygate electrodes of the present invention adopts electric conducting material metal gate electrode, metal nitride, metal oxide or metal silicide.
Shallow slot metal-oxide-semiconductor diode of the present invention body silicon, carborundum, GaAs, indium phosphide or germanium silicon semiconductor material.
Substrate of the present invention adopts N type heavy doping monocrystalline substrate district, and the crystal orientation is＜100 〉, doping content is 1.8 * 10
19Cm
-3, thickness is 5 μ m; N
-The epitaxial loayer phosphorus doping density is 3.5 * 10
15Cm
-3, thickness is 9 μ m; Dark P tagma doping content is 3.5 * 10
17Cm
-3, thickness is 0.85 μ m, the PN junction distance that two dark P tagmas constitute is 0.9 μ m; N type heavily doped region doping content is 5 * 10
19Cm
-3, junction depth is 0.3 μ m; The silicon dioxide gate oxide thickness is 8nm; Polygate electrodes thickness is 0.4 μ m; It is the aluminium of 4 μ m that the metallization anode adopts thickness; It is the aluminium of 4 μ m that the metallization negative electrode adopts thickness.
The present invention compared with prior art, employing has electron accumulation layer structure and junction field tubular construction, because the gate oxide of electron accumulation layer structure is extremely thin, diode can obtain low-down conduction voltage drop, the introducing of junction field tubular construction has improved puncture voltage greatly and has reduced leakage current, and thin gate oxide has quickened the pinch off of semiconductor surface conducting channel under reverse voltage, forward conduction voltage drop and trading off between reverse recovery time have been realized better, at 50A/cm
2Current density under, forward conduction voltage drop is than low 0.2 volt of conventional PiN diode, more excellent reverse recovery characteristic and lower leakage current make the present invention have trading off between better forward conduction voltage drop and the reverse breakdown voltage.
Description of drawings
Fig. 1 is a shallow slot metal-oxide-semiconductor diode example structure schematic diagram of the present invention.
Fig. 2 is the puncture voltage simulation curve figure of the embodiment of the invention.
Fig. 3 is the forward conduction voltage drop simulation curve figure of the embodiment of the invention.
Fig. 4 is the reverse recovery characteristic simulation curve figure of the embodiment of the invention.
Embodiment
Below in conjunction with drawings and Examples the present invention is described in further detail.As shown in Figure 1, shallow slot metal-oxide-semiconductor diode of the present invention is provided with metallization negative electrode 1, N type heavy doping monocrystalline substrate district 2, N
- Epitaxial loayer 3, two dark P tagmas 5, shallow slot 6, N type heavily doped region 7, silicon dioxide gate oxide 8, polygate electrodes 9 and metallization anodes 10.
The physical structure of described shallow slot metal-oxide-semiconductor diode up is metallization negative electrode 1, N type heavy doping monocrystalline substrate district 2, N from bottom successively
- Epitaxial loayer 3, two dark P tagmas 5 that are positioned at both sides, the N type heavily doped region 7 that is positioned at shallow slot 6 on the dark P tagma 5, shallow slot 6 inboards, silicon dioxide gate oxide 8, polygate electrodes 9, metallization anode 10.
The doping content in described dark P tagma 5 is greater than N
-Two orders of magnitude of the doping content of epitaxial loayer 3, dark P tagma 5 cross sectional shapes are rectangles, to dark P tagma, opposite outstanding arc, semicircle, trapezoidal or oval, shallow slot 6 groove depths are 0.7 μ m, shallow slot 6 is metallized anode 10 complete filling, silicon dioxide gate oxide 8 thickness ranges are 5 to 100nm, and N type heavily doped region 7 and dark P tagma 5 do not exist overlapping region (to be N between N type heavily doped region 7 and the dark P tagma 5
-Epitaxial loayer 3).
Shallow slot metal-oxide-semiconductor diode operation principle of the present invention: silicon dioxide gate oxide 8 thickness of electron accumulation layer structure 11 are extremely thin, under very little forward voltage, the accumulation of electronics takes place in semiconductor surface consumingly under the silicon dioxide gate oxide 8, thereby obtain low-down conduction voltage drop, very large current density.The introducing of junction field tubular construction makes that conducting channel is by pinch off under very little reverse voltage, and the reverse voltage of increase is mainly by low-doped N
- Epitaxial loayer 3 bears, and greatly reduces leakage current and has improved puncture voltage.Thin gate silicon oxide oxide layer 8 has been quickened the pinch off of semiconductor surface conducting channel under reverse voltage, has realized forward conduction voltage drop and trading off between reverse recovery time better.
Shallow slot metal-oxide-semiconductor diode of the present invention is when metallization anode 10 adds no-voltage with respect to metallization negative electrode 1, because the doping content in dark P tagma 5 is far longer than N
-The doping content of epitaxial loayer 3, built-in electromotive force make the N in junction field area under control 4
-The N that epitaxial loayer and silicon dioxide gate oxide 8 are just following
- Epitaxial loayer 3 just exhausts fully.
When metallization anode 10 adds very little forward voltage with respect to metallization negative electrode 1, because of silicon dioxide gate oxide 8 thickness of electron accumulation layer structure 11 only are 8nm, the accumulation of majority carrier takes place in semiconductor surface under the silicon dioxide gate oxide 8 consumingly, form the electron conduction raceway groove, junction field effect transistor district this moment receives positive voltage by shallow slot 6 and metallization anode 10 at 4 dark P tagma 5, makes the N in junction field effect transistor district 4
- Epitaxial loayer 3 conducting channels are opened, thus the diode forward conducting.
When metallization anode 10 added reverse voltage with respect to metallization negative electrode 1, the conducting channel in junction field area under control 4 was continued to increase reverse voltage by pinch off, and depletion layer is to the N near metallization negative electrode 1 one sides
- Epitaxial loayer 3 expansions, and the polygate electrodes 9 connection reverse voltages of electron accumulation layer structure 11 make the semiconductor surface under the silicon dioxide gate oxide 8 quicken to exhaust at this moment, thereby make shallow slot metal-oxide-semiconductor diode of the present invention can bear very high reverse breakdown voltage, and leakage current is very little, and oppositely recovering very, weak point can be low to moderate several nanoseconds.
Embodiment, substrate adopt N type heavy doping monocrystalline substrate district 2, and the crystal orientation is＜100 〉, doping content is 1.8 * 10
19Cm
-3, thickness is 5 μ m; N
- Epitaxial loayer 3 phosphorus doping densities are 3.5 * 10
15Cm
-3, thickness is 9 μ m; Dark P tagma 5 doping contents are 3.5 * 10
17Cm
-3, thickness is 0.85 μ m, the PN junction distance that two dark P tagmas 5 constitute is 0.9 μ m; Shallow slot 6 groove depths are 0.7 μ m; N type heavily doped region 7 doping contents are 5 * 10
19Cm
-3, junction depth is 0.3 μ m; Silicon dioxide gate oxide 8 thickness are 8nm; Polygate electrodes 9 thickness are 0.4 μ m; It is the aluminium of 4 μ m that metallization anode 10 adopts thickness; It is the aluminium of 4 μ m that metallization negative electrode 1 adopts thickness.
Adopt the SUN work station, by TAURUS MEDICI simulation software the shallow slot metal-oxide-semiconductor diode of embodiment has been carried out emulation, emulation cellular width is 2 μ m.
As shown in Figure 2, compare with the silica-based Schottky diode of routine, the shallow slot metal-oxide-semiconductor diode of embodiment has increased puncture voltage, the withstand voltage 60V that scarcely is higher than of Schottky diode, the highest only about 100V, also greatly reduce leakage current, adopting diode leakage electric current of the present invention only is one of percentage of the conventional Schottky diode of same size.
As shown in Figure 3, because the existence of electron accumulation layer structure when reducing forward conduction voltage drop, also makes saturation current density improve greatly, at 50A/cm
2Current density under, forward conduction voltage drop only is 0.5V.
As shown in Figure 4, owing to the introducing of electron accumulation layer structure, accelerated the speed that opens and shuts off of diode greatly, the diode opening time of the present invention only is 1ns, only be 9ns reverse recovery time, and be generally hundreds of nanosecond the reverse recovery time of fast recovery diode.
As seen shallow slot metal-oxide-semiconductor diode of the present invention has adopted junction type field-effect tube structure and electron accumulation layer structure, and the contradictory relation between forward conduction voltage drop and the reverse turn-off power loss has obtained better compromise.
Embodiment can adopt following method to prepare, and processing step is:
One, monocrystalline silicon is prepared, and adopts N type heavy doping study on floating zone silicon (N type impurity) substrate 2, and doping content is 1.8 * 10
19Cm
-3, its crystal orientation is＜100 〉, thickness is 5 μ m.
Two, outer layer growth adopts vapour phase epitaxy VPE method under 1000 ℃ of temperature, vacuum condition, the N of growth 9 μ m on substrate 2
- Epitaxial loayer 3, phosphorus doping density are 3.5 * 10
15Cm
-3
Three, boron is injected in dark P tagma, at the thick photoresist of whole silicon wafer surface deposition one deck 4 μ m, carries out the figure in the dark P of photoetching tagma 5 with dark P tagma Pdeep reticle, high-energy boron ion injection then, and dosage is 1 * 10
13Cm
-2, energy is 450KeV, forms dark P tagma 5, doping content is 3.5 * 10
17Cm
-3, dark P tagma 5 upper surface junction depths are 0.65 μ m, dark P tagma 5 lower surface junction depths are 1.5 μ m.
Four, the preparation polysilicon gate uses dried oxygen method, in the time of 1000 ℃, and 2.5slm O
2With dry-oxygen oxidation under the 67sccm HCL atmosphere condition 2.5 minutes, growth thickness was the gate oxide of 8nm, 5slmSiH in the time of 635 ℃
4Chemical vapor deposition is 15 minutes under the atmospheric condition, deposition thickness is the polysilicon of 0.4 μ m, with multi-crystal silicon area Poly reticle, adopt prior art that polysilicon and gate oxide are carried out the photoetching of metal-oxide-semiconductor structure figure, obtain polygate electrodes 9 and silicon dioxide gate oxide 8.
Five, preparation N type heavily doped region NSD uses multi-crystal silicon area Poly reticle to carry out heavily doped region arsenic and injects, and dosage is 6 * 10
14Cm
-2, energy is 30KeV, obtains N type heavily doped region 7, peak doping concentration is 5 * 10
19Cm
-3, junction depth is 0.3 μ m.
Six, shallow slot etching is used shallow slot Trench reticle etching shallow slot 6 on dark P tagma 5, and groove depth is 0.7 μ m.
Seven, front-side metallization is the metallic aluminium of 4 μ m at entire device surface sputtering one layer thickness, and shallow slot 6 is formed metallization anode 10 lead-in wires by the metallic aluminium complete filling.
Eight, thinning back side and metallization are carried out mechanical reduction to the device back side and are handled, and device is thinned to 19 μ m, are the metallic aluminium of 4 μ m by prior art at device back spatter thickness afterwards, form metallized metal negative electrode 1 lead-in wire.
Carry out preliminary survey, scribing, sintering, lead-in wire bonding, middle survey, encapsulation and total the survey by prior art again, obtain shallow slot metal-oxide-semiconductor diode of the present invention.
Adopt 3 reticle in the method for present embodiment altogether, be followed successively by Pdeep reticle, Poly reticle and Trench reticle according to the order of version number.
The ion implantation process that the method for present embodiment is carried out has: Pdeep boron injects, and NSD phosphorus injects.
In implementation process, can be as the case may be, under the constant situation of basic structure, carry out certain accommodation design.For example: increase the preparation of field oxide, polygate electrodes 9 can not exclusively link to each other with the metallization anode.Also available carborundum, GaAs, indium phosphide or germanium silicon semiconductor material replace body silicon.Polygate electrodes 9 can use electric conducting material metal gate electrode, metal nitride, metal oxide and some metal silicides to replace.
Shallow slot metal-oxide-semiconductor diode of the present invention, owing to combine junction field tubular construction and electron accumulation layer structure, also optimized the reverse recovery characteristic of diode when improving puncture voltage, thereby reduced turn-off power loss, also greatly reduce conduction loss, realized between forward conduction voltage drop and the turn-off power loss better compromise.Compare with the PiN diode of prior art, at 50A/cm
2Current density under, forward conduction voltage drop has reduced by 0.2 volt, can be low to moderate several nanoseconds reverse recovery time and puncture voltage can reach more than 100 volts.
Adopt shallow slot metal-oxide-semiconductor diode of the present invention, can realize low conduction voltage drop, high reverse breakdown voltage, good reverse recovery characteristic is realized trading off between better forward conduction voltage drop and the turn-off power loss.Set up electron accumulation layer by the MOS structure during forward conduction, reduce the forward voltage drop of diode, acquisition is near the forward conduction voltage drop of Schottky diode since can bear very high puncture voltage when having junction field tubular construction reverse blocking and leakage current very little.
Claims (10)
1. shallow slot metal-oxide-semiconductor diode is characterized in that: the physical structure of described shallow slot metal-oxide-semiconductor diode up is metallization negative electrode (1), N type heavy doping monocrystalline substrate district (2), N from bottom successively
-Epitaxial loayer (3), be positioned at both sides two dark P tagmas (5), be positioned at shallow slot (6) on the dark P tagma (5), inboard N type heavily doped region (7), silicon dioxide gate oxide (8), polygate electrodes (9), the metallization anode (10) of shallow slot (6); Described metallization anode (10) and shallow slot (6), N type heavily doped region (7) and polygate electrodes (9) short circuit; Described two dark P tagmas (5) and the N between it
-Epitaxial loayer (3) constitutes junction field effect transistor district (4), and dark P tagma (5) is by shallow slot (6) and metallization anode (10) short circuit; Described N type heavily doped region (7), silicon dioxide gate oxide (8), polygate electrodes (9) and N
-Epitaxial loayer (3) constitutes electron accumulation layer structure (11).
2. shallow slot metal-oxide-semiconductor diode according to claim 1 is characterized in that: the doping content in described dark P tagma (5) is greater than N
-Two orders of magnitude of the doping content of epitaxial loayer (3).
3. shallow slot metal-oxide-semiconductor diode according to claim 2 is characterized in that: described shallow slot (6) groove depth is 0.7 μ m.
4. shallow slot metal-oxide-semiconductor diode according to claim 3 is characterized in that: described shallow slot (6) is metallized anode (10) complete filling.
5. shallow slot metal-oxide-semiconductor diode according to claim 4 is characterized in that: described dark P tagma (5) cross sectional shape is rectangle, semicircle, trapezoidal or oval.
6. shallow slot metal-oxide-semiconductor diode according to claim 5 is characterized in that: described silicon dioxide gate oxide (8) thickness range is 5 to 100nm.
7. shallow slot metal-oxide-semiconductor diode according to claim 6 is characterized in that: be N between described N type heavily doped region (7) and the dark P tagma (5)
-Epitaxial loayer (3).
8. shallow slot metal-oxide-semiconductor diode according to claim 7 is characterized in that: described polygate electrodes (9) adopts electric conducting material metal gate electrode, metal nitride, metal oxide or metal silicide to replace.
9. shallow slot metal-oxide-semiconductor diode according to claim 8 is characterized in that: described shallow slot metal-oxide-semiconductor diode body silicon, carborundum, GaAs, indium phosphide or germanium silicon semiconductor material.
10. shallow slot metal-oxide-semiconductor diode according to claim 9 is characterized in that: described N type heavy doping monocrystalline substrate district (2), crystal orientation are＜100 〉, doping content is 1.8 * 10
19Cm
-3, thickness is 5 μ m; N
-Epitaxial loayer (3) phosphorus doping density is 3.5 * 10
15Cm
-3, thickness is 9 μ m; Dark P tagma (5) doping content is 3.5 * 10
17Cm
-3, thickness is 0.85 μ m, the PN junction distance that two dark P tagmas (5) constitute is 0.9 μ m; N type heavily doped region (7) doping content is 5 * 10
19Cm
-3, junction depth is 0.3 μ m; Silicon dioxide gate oxide (8) thickness is 8nm; Polygate electrodes (9) thickness is 0.4 μ m; It is the aluminium of 4 μ m that metallization anode (10) adopts thickness; It is the aluminium of 4 μ m that metallization negative electrode (1) adopts thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010519680A CN102064201B (en) | 2010-10-22 | 2010-10-22 | Shallow-slot metal oxide semiconductor diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010519680A CN102064201B (en) | 2010-10-22 | 2010-10-22 | Shallow-slot metal oxide semiconductor diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102064201A CN102064201A (en) | 2011-05-18 |
| CN102064201B true CN102064201B (en) | 2011-11-30 |
Family
ID=43999406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010519680A Expired - Fee Related CN102064201B (en) | 2010-10-22 | 2010-10-22 | Shallow-slot metal oxide semiconductor diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102064201B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593105B (en) * | 2012-02-20 | 2014-06-18 | 中国科学院微电子研究所 | Triggered enhanced polycrystalline diode and manufacturing method thereof |
| CN102820340A (en) * | 2012-08-31 | 2012-12-12 | 电子科技大学 | Shallow slot type metal oxide semiconductor diode |
| CN105810754B (en) * | 2016-06-03 | 2019-01-29 | 电子科技大学 | A kind of metal-oxide-semiconductor diode with accumulation layer |
| CN109119489A (en) * | 2018-08-24 | 2019-01-01 | 电子科技大学 | A kind of metal-oxide-semiconductor diode of composite construction |
| CN111312802B (en) * | 2020-02-27 | 2022-01-28 | 电子科技大学 | Low-starting-voltage and low-on-resistance silicon carbide diode and preparation method thereof |
| CN112992834B (en) * | 2021-02-09 | 2022-02-18 | 捷捷微电(上海)科技有限公司 | Advanced diode packaging structure with indirect electrical connection of source and grid |
| CN118041270A (en) * | 2022-11-04 | 2024-05-14 | 广州乐仪投资有限公司 | Preparation method of semiconductor structure, semiconductor structure and electronic equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6537921B2 (en) * | 2001-05-23 | 2003-03-25 | Vram Technologies, Llc | Vertical metal oxide silicon field effect semiconductor diodes |
| DE102004049246A1 (en) * | 2004-10-01 | 2006-04-06 | Atmel Germany Gmbh | Lateral DMOS transistor and method for its manufacture |
-
2010
- 2010-10-22 CN CN201010519680A patent/CN102064201B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102064201A (en) | 2011-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101976687B (en) | Fast recovery metal oxide semiconductor diode with low power consumption | |
| CN102064201B (en) | Shallow-slot metal oxide semiconductor diode | |
| CN108962977B (en) | SBD (silicon carbide) -integrated silicon carbide trench MOSFETs (metal-oxide-semiconductor field effect transistors) and preparation method thereof | |
| CN107799587A (en) | A kind of reverse blocking IGBT and its manufacture method | |
| CN109065621B (en) | Insulated gate bipolar transistor and preparation method thereof | |
| CN102544114B (en) | Accumulation type grooved-gate diode | |
| WO2023142393A1 (en) | High-speed flyback diode-integrated silicon carbide split gate mosfet and preparation method | |
| CN105206656A (en) | Reverse conducting IGBT device | |
| CN105810754B (en) | A kind of metal-oxide-semiconductor diode with accumulation layer | |
| CN101540283A (en) | Method for manufacturing 4H-SiC PiN/schottky diode of field limiting ring structure | |
| CN213459736U (en) | SiC IGBT device | |
| CN101859703B (en) | Low turn-on voltage diode preparation method | |
| CN114823911A (en) | Groove silicon carbide MOSFET integrated with high-speed freewheeling diode and preparation method | |
| CN102097479A (en) | Low-voltage buried channel VDMOS (vertical double-diffused metal oxide semiconductor) device | |
| CN113644117A (en) | Silicon carbide JBS device cellular structure with novel deep groove and preparation method thereof | |
| CN110061057B (en) | Super junction power MOSFET with integrated tunneling diode | |
| CN102709317A (en) | Low-threshold voltage diode | |
| CN111180528B (en) | Three-stage inclined mesa junction terminal structure of SiC Schottky diode | |
| CN103208529A (en) | Semiconductor diode and method for forming semiconductor diode | |
| EP3989292A1 (en) | Insulated gate bipolar transistor | |
| CN117497601A (en) | Structure, manufacturing method and electronic equipment of planar silicon carbide transistor | |
| CN109065608A (en) | A kind of lateral bipolar power semiconductor and preparation method thereof | |
| CN116153992B (en) | Reverse-conduction insulated gate bipolar transistor | |
| CN102263139A (en) | Improved hybrid rectifying diode structure | |
| CN210607276U (en) | Groove type power device based on Schottky structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111130 Termination date: 20151022 |
|
| EXPY | Termination of patent right or utility model |