CN109950323A - The III group-III nitride diode component and preparation method thereof for the superjunction that polarizes - Google Patents
The III group-III nitride diode component and preparation method thereof for the superjunction that polarizes Download PDFInfo
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Abstract
The invention discloses the III group-III nitride diode components and production method of a kind of superjunction that polarizes.The device includes: the first hetero-junctions including the first, second semiconductor, is formed with two-dimensional electron gas in first heterojunction structure；The second hetero-junctions including second semiconductor and third semiconductor is formed with two-dimensional hole gas in second hetero-junctions；The 4th semiconductor being formed on second semiconductor, the 4th semiconductor are closely connect in the horizontal direction with third semiconductor；4th semiconductor is p-type doping, the two-dimensional electron gas in first hetero-junctions can be exhausted；The anode and cathode connecting with the first hetero-junctions, the anode and cathode are electrically connected with two-dimensional electron gas in first hetero-junctions, and affiliated anode is electrically connected with the formation of the 4th semiconductor simultaneously.
Description
Technical field
The present invention relates to a kind of diode components, and in particular to it is a kind of polarize superjunction III group-III nitride diode component and
Its production method belongs to power semiconductor technologies field.
Background technique
III group-III nitride (such as GaN) has many advantages, such as big forbidden bandwidth, high electron mobility, high breakdown field strength, Neng Gouman
Generation power electronic system is more high-power to power device for foot, the work of higher frequency, smaller volume and higher temperature is wanted
It asks, therefore diode component made of III group-III nitride becomes the hot spot of power device research of new generation.Traditional uses Xiao Te
III group-III nitride diode of Base Metal contact is also faced with many problems, as cut-in voltage is big, breakdown potential is forced down and reverse leakage
It is big etc..
The AlGaN/GaN diode component that Jae-Gil Lee etc. is prepared by the way of etching AlGaN potential barrier is opened
Voltage 0.37V, much smaller than the diode cut-in voltage of Conventional Schottky structure, but the larger (IEEE of reverse leakage current
Electron Device Letters,vol.34,no.2,Feb2013)。
The schottky diode device that Silvia Lenci etc. is prepared using knot terminal technology, reverse current have obtained effectively
Reduction, but forward conduction current density still very it is low (IEEE ElectronDevice Letters, vol.34, no.8,
Aug2013)。
All fine jades etc. propose it is a kind of using Ohmic contact as anode and cathode, using the two dimension of AlGaN/GaN hetero-junctions
Electron gas will be close to anode A lGaN barrier layer etching certain depth, prepare MIM element and connect as conducting channel
Touching, the metal are connected with anode, to realize that forward voltage is opened and backward voltage turn-off function (CN103872145A).The device
Lower threshold voltage and conducting current density may be implemented in part.But it since etching AlGaN potential barrier technical difficulty is larger, carves
Wound of deteriorating is higher, and there are certain difficulty for the preparation of the device.
In short, there is also many defects for existing III group-III nitride diode, as cut-in voltage is big, breakdown potential is forced down and is saturated
Electric current is low etc., this is also that the problem solved is thirsted for always in this field.
Summary of the invention
The main purpose of the present invention is to provide it is a kind of polarize superjunction III group-III nitride diode component and production method,
With overcome the deficiencies in the prior art.
For realization aforementioned invention purpose, the technical solution adopted by the present invention includes:
The embodiment of the invention provides a kind of III group-III nitride diode components of superjunction that polarizes comprising:
First hetero-junctions comprising the first semiconductor and the second semiconductor being formed on the first semiconductor, described second
Semiconductor has the band gap for being wider than the first semiconductor, and is formed with two-dimensional electron gas in first heterojunction structure；
Second hetero-junctions comprising second semiconductor and the third semiconductor being formed on second semiconductor,
The third semiconductor has the band gap for being narrower than second semiconductor, is formed with two-dimensional hole gas in second hetero-junctions；
4th semiconductor is formed on second semiconductor and closely connect with third semiconductor, and can be by
Two-dimensional electron gas in one hetero-junctions exhausts；
Anode and cathode, wherein the anode includes the first anode and second plate being electrically connected to each other, first sun
Pole and cathode are electrically connected with the two-dimensional electron gas in first hetero-junctions, and the second plate is connect with the 4th semi-conductor electricity.
Preferably, the 4th semiconductor and third semiconductor hang down with the axis of the III group-III nitride diode component
It combines closely on straight direction.
Further, the 4th semiconductor is p-type semiconductor.
Preferably, Ohmic contact or Schottky contacts are formed between the second plate and the 4th semiconductor.
Preferably, the first anode and cathode and the second semiconductor form Ohmic contact.
Further, for III group-III nitride diode component of the invention, when the electricity applied on the second plate
When pressure is greater than a cut-in voltage, the diode component is in the open state, and the cut-in voltage is at least enough to make to be located at second
The interior formation two-dimensional electron gas of the regional area of the first hetero-junctions immediately below anode and the 4th semiconductor contact is simultaneously positive by first
Pole is electrically connected with cathode；And when the voltage applied on the second plate is less than the cut-in voltage, the diode device
Part is in close state.
Preferably, the minus earth.
The embodiment of the invention also provides a kind of production of III group-III nitride diode component for making the polarization superjunction
Method comprising: the first semiconductor, the second semiconductor and the 4th semiconductor are set gradually on substrate,
Anode and cathode is made, the anode includes the first anode and second plate being electrically connected to each other, and makes the first sun
Pole and cathode are electrically connected with the two-dimensional electron gas in first hetero-junctions, and second plate and the 4th semiconductor is made to form ohm
Contact or Schottky contacts；And
Processing is doped to the 4th semiconductor being distributed between anode and cathode and forms third semiconductor.
In production method above-mentioned, it can at least pass through appointing in ion implanting, High temperature diffusion and corona treatment
A kind of mode is doped processing to the 4th semiconductor, to form third semiconductor.
Preferably, wherein the doped chemical used includes F, N, Ar or H, but not limited to this.
The embodiment of the invention also provides a kind of production of III group-III nitride diode component for making the polarization superjunction
Method comprising: the first semiconductor, the second semiconductor, third semiconductor are set gradually on substrate；
The first anode and cathode are made, and makes the Two-dimensional electron pneumoelectric in the first anode and cathode and first hetero-junctions
Connection；
Processing is doped to the third semiconductor close to first anode side, forms the 4th semiconductor；And
Second plate is made, and second plate and the 4th semiconductor is made to form Ohmic contact or Schottky contacts.
In production method above-mentioned, it can at least pass through ion implanting and high-temperature annealing activation mode or low-energy electron spoke
It penetrates active mode and processing is doped to third semiconductor, to form the 4th semiconductor.
Preferably, wherein the doped chemical used includes magnesium or zinc, but not limited to this.
It, at least can be with Metallo-Organic Chemical Vapor deposition, molecular beam epitaxy, original in the production method stated before this invention
Any mode in sublayer deposition, physical vapour deposition (PVD) and magnetron sputtering grow to be formed the first semiconductor, the second semiconductor and
Third semiconductor or the 4th semiconductor.
Preferably, the substrate includes gallium nitride, silicon carbide, silicon or Sapphire Substrate, but not limited to this.
Compared with prior art, III group-III nitride diode device structure of polarization superjunction provided by the invention is simple, together
When have p-type depletion region and high resistant nut cap, can more convenient and fast adjusting device cut-in voltage, improve device pressure resistance and frequency
Characteristic；Third, the 4th semiconductor can realize the mutual inversion of phases of p-type and high resistant by technology mode simultaneously, and simple process can be with
Avoid excessive etching injury, process window is big, small to the damage of device, and process repeatability is high, low in cost, be easy into
Row large-scale production.
Detailed description of the invention
Fig. 1 is the partial structural diagram of III group-III nitride diode of polarization superjunction in an exemplary embodiments of the invention；
Fig. 2 is a kind of fabrication processing of III group-III nitride diode of the superjunction that polarizes in a specific embodiment of the invention
Figure；
Fig. 3 is the manufacture craft stream of III group-III nitride diode of another polarization superjunction in a specific embodiment of the invention
Cheng Tu；
Description of symbols: substrate 1, the first semiconductor 2, the second semiconductor 3, the 4th semiconductor 4, the first anode 5, cathode
6, second plate 7, two-dimensional electron gas 8, third semiconductor 9, two-dimensional hole gas 10, source electrode 11, drain electrode 12, grid 13.
Specific embodiment
In view of deficiency in the prior art, inventor is studied for a long period of time and is largely practiced, and is able to propose of the invention
Technical solution.The technical solution, its implementation process and principle etc. will be further explained as follows.
More detailed explanation will hereafter be made to technical solution of the present invention.It is understood, however, that in model of the present invention
In enclosing, above-mentioned each technical characteristic of the invention and it is ok between each technical characteristic specifically described in below (e.g. embodiment)
It is combined with each other, to form a new or preferred technical solution.Due to space limitations, I will not repeat them here.
On the one hand III group-III nitride diode component of a kind of polarization superjunction that the embodiment of the present invention provides includes:
First hetero-junctions comprising the first semiconductor and the second semiconductor being formed on the first semiconductor, described second
Semiconductor has the band gap for being wider than the first semiconductor, and is formed with two-dimensional electron gas in first heterojunction structure；
Second hetero-junctions comprising second semiconductor and the third semiconductor being formed on second semiconductor,
The third semiconductor has the band gap for being narrower than second semiconductor, is formed with two-dimensional hole gas in second hetero-junctions；
4th semiconductor is formed on second semiconductor and closely connect with third semiconductor, and can be by
Two-dimensional electron gas in one hetero-junctions exhausts；
Anode and cathode, wherein the anode includes the first anode and second plate being electrically connected to each other, first sun
Pole and cathode are electrically connected with the two-dimensional electron gas in first hetero-junctions, and the second plate is connect with the 4th semi-conductor electricity.
Further, third semiconductor and the 4th semiconductor can be integral structure.Wherein third semiconductor can be by
Regional area in 4th semiconductor, which changes, to be formed or the 4th semiconductor can be changed by the regional area in third semiconductor
It is formed.
For example, the regional area of the 4th semiconductor can be changed into the third semiconductor of high resistant by certain processing.
Further, the material of first semiconductor, the second semiconductor and third semiconductor can be nitrogenized selected from III race
Object.
Preferably, the material of first semiconductor includes GaN, but not limited to this.
Preferably, the material of second semiconductor includes AlxGa(1-x)N, AlInGaN or InxAl(1-x)N, 0 x≤1 <,
But not limited to this.
Preferably, the material of the third semiconductor includes high resistant or intrinsic GaN, high resistant or eigen I nGaN, high resistant or sheet
InN or GaO is levied, includes more preferably high resistant GaN, high resistant InGaN or high resistant InN, for example, the material of the third semiconductor
Matter includes the high resistant GaN, InGaN or InN mixed C or mix Fe, but not limited to this.
Further, insert layer can also be distributed between first semiconductor and the second semiconductor.
Preferably, the material of the insert layer includes AlN, but not limited to this.
Further, the 4th semiconductor is p-type semiconductor.
Preferably, the material of the 4th semiconductor includes the wide bandgap semiconductor of p-type.
It is furthermore preferred that the wide bandgap semiconductor of the p-type includes III group-III nitride of p-type, such as p-GaN or p-InGaN,
But not limited to this.
It is furthermore preferred that the wide bandgap semiconductor includes p-NiO, but not limited to this.
Further, the p-type doping concentration of the 4th semiconductor and thickness are enough to exhaust in first hetero-junctions
Two-dimensional electron gas.In some embodiments, the third semiconductor can be expanded by the 4th semiconductor by ion implanting, high temperature
It dissipates and is formed with any mode in corona treatment.Preferably, the member of the ion implanting, diffusion or corona treatment
Element includes hydrogen, fluorine etc., but not limited to this.
In some embodiments, the 4th semiconductor can pass through ion implanting and high annealing by third semiconductor
Activation is formed or low-energy electron radioactivation processing is formed.Preferably, injection element can for magnesium, zinc etc., but not limited to this.
Preferably, third semiconductor is at least ion implanted between the anode and cathode, corona treatment and
Any mode processing in thermal diffusion process is formed.
In some embodiments, the first anode is wholely set with second plate.
In some embodiments, the 4th semiconductor is covered by second plate.
It further says, the 4th semiconductor can will be located at the 4th semiconductor lower zone in first hetero-junctions
The two-dimensional electron gas in domain exhausts, and disconnects the two-dimensional electron gas conducting channel in first hetero-junctions, and it is logical can not to form electric current
Road.
In some embodiments, Ohmic contact or schottky junctions are formed between the second plate and the 4th semiconductor
Touching.
In some embodiments, the first anode and cathode and the second semiconductor form Ohmic contact.
Further, for III group-III nitride diode component of polarization superjunction of the invention, when in the second plate
When the voltage of upper application is greater than a cut-in voltage, the diode component is in the open state, and the cut-in voltage is at least enough
Make to be located in the regional area of the first hetero-junctions immediately below second plate and the 4th semiconductor contact and forms two-dimensional electron gas
And the first anode is electrically connected with cathode；And when the voltage applied on the second plate is less than the cut-in voltage, institute
Diode component is stated to be in close state.Preferably, the minus earth.
Preferably, the cut-in voltage is positive voltage.
In some more specific embodiments, when no applied voltage or the voltage of application are lower than zero on the anode
When voltage, the voltage that the diode component is in close state, and ought apply on the anode is greater than no-voltage and is higher than
When cut-in voltage, the diode component is in the open state.
In some more specific embodiments, zero-bias or it is not biased when applying on the anode
When, the accumulation without two-dimensional electron gas in the regional area of the first hetero-junctions immediately below the anode, and when in the sun
It, can be in the regional area for the first hetero-junctions being located at immediately below the anode when the extremely upper voltage applied is greater than cut-in voltage
Form two-dimensional electron gas.
In some more specific embodiments, when the diode component is opened, the two-dimensional electron gas, two dimension
Hole gas exists simultaneously in the first hetero-junctions, the second hetero-junctions；When the diode component is in OFF state, the two dimension electricity
Sub- gas is released to cathode and the interface in first hetero-junctions leaves positive charge, and the two-dimensional hole gas passes through the 4th half
Conductor is released to anode and the interface in second hetero-junctions leaves negative electrical charge, and the positive charge and negative electrical charge make described
Uniform electric field distribution is formed in diode between anode and cathode.
A kind of III group-III nitride diode device structure of superjunction that polarizes provided by the invention is simple, while having p-type consumption
Area and high resistant nut cap, the cut-in voltage of device more can be adjusted easily to the greatest extent, and device pressure resistance and frequency characteristic also obtain
It significantly improves.
A kind of III group-III nitride diode for making the polarization superjunction that the other side of the embodiment of the present invention provides
The production method of device includes:
The first semiconductor, the second semiconductor and the 4th semiconductor are set gradually on substrate,
Anode and cathode is made, the anode includes the first anode and second plate being electrically connected to each other, and makes the first sun
Pole and cathode are electrically connected with the two-dimensional electron gas in first hetero-junctions, and second plate and the 4th semiconductor is made to form ohm
Contact or Schottky contacts；And
Processing is doped to the 4th semiconductor being distributed between anode and cathode, to form third semiconductor.
In production method above-mentioned, it can at least pass through appointing in ion implanting, High temperature diffusion and corona treatment
A kind of mode is doped processing to the regional area of the 4th semiconductor, to form third semiconductor.
Preferably, wherein the doped chemical used includes F, N, Ar or H, but not limited to this.
Alternatively, oxidation processes can also be carried out to the 4th semiconductor by high-temperature thermal oxidation in production method above-mentioned, from
And form third semiconductor (such as GaO).
For example, ion implanting, plasma bombardment and thermal diffusion can be passed through in some more specific embodiments
Etc. techniques, by the 4th semiconductor transition of p-type between anode and cathode at high resistant third semiconductor.The doping wherein used
Element may include F, N, Ar, H etc..
A kind of III group-III nitride diode for making the polarization superjunction that the other side of the embodiment of the present invention provides
The production method of device includes:
The first semiconductor, the second semiconductor, third semiconductor are set gradually on substrate；
The first anode and cathode are made, and makes the Two-dimensional electron pneumoelectric in the first anode and cathode and first hetero-junctions
Connection；
Processing is doped to the third semiconductor close to first anode side, forms the 4th semiconductor；
Second plate is made, and second plate and the 4th semiconductor is made to form Ohmic contact or Schottky contacts.
In production method above-mentioned, it can at least pass through ion implanting and high-temperature annealing activation mode or low-energy electron spoke
It penetrates active mode and processing is doped to third semiconductor, to form the 4th semiconductor.
Preferably, wherein the doped chemical used includes magnesium or zinc, but not limited to this.
For example, the third semiconductor of the high resistant of anode part can be will be close in some more specific embodiments
Technique by low-energy electron radioactivation and the high temperature anneal etc., which adulterates Mg, to be activated, and makes third semiconductor transition at p-type
Semiconductor, i.e. the 4th semiconductor.
It, at least can be with Metallo-Organic Chemical Vapor deposition, molecular beam epitaxy, original in the production method stated before this invention
Any mode in sublayer deposition, physical vapour deposition (PVD) and magnetron sputtering grow to be formed the first semiconductor, the second semiconductor and
Third semiconductor or the 4th semiconductor.
Preferably, the substrate includes gallium nitride, silicon carbide, silicon or Sapphire Substrate, but not limited to this.
In the production method stated before this invention, the third half can be removed by dry etching or wet-etching technology
Anode (first anode) region and cathode zone of conductor or the 4th semiconductor.
In some more specifically embodiments, the system of III group-III nitride diode component of the polarization superjunction is made
May include: as method
(1) Material growth: the structure of growth HR GaN/AlGaN/GaN/ substrate, the two-dimensional electron gas in this structure
(2DEG) and two-dimensional hole gas (2DHG) exist simultaneously the interface of two hetero-junctions；The acquisition pattern of high resistant (HR) GaN is main
Pass through incorporation acceptor impurity Mg, Zn etc. when growth GaN (GaN for mixing acceptor impurity herein is the GaN not being activated).
(2) it anode, cathode preparation: is first patterned, reuses etching apparatus (ICP, RIE, ECR etc.) and etch away anode
With the HR GaN of cathode zone, then sunk on AlGaN by filming equipment (such as e-book evaporation, magnetron sputtering, thermal evaporation)
Product ohmic metal carries out alloying finally by short annealing (RTA), realizes the preparation of Ohm contact electrode.
(3) Local activation: preparing mask, (mask material can be photoresist, SiO2, silicon nitride etc.), anode region is carried out
Graphically (photoresist is development, other masks pass through wet process or dry etching), then in a manner of low-energy electron beam radiation (LEEBI)
The HRGaN of split window area (also can be regarded as the region of no mask protection) carries out Local activation so that HR GaN transformation
For p-GaN, the equipment of low-energy electron beam radiation include SEM (scanning electron microscope), electron beam lithography machine etc. can be formed it is low
The equipment of energy electron beam.
(4) prepared by anode: it is first graphical, the metal of Ohmic contact can be formed with p-GaN using one layer of filming equipment deposition
(Ni/Au, Pd/Pt/Au etc.), then Ohmic contact is obtained by techniques such as removing, annealing.Or using filming equipment deposit one layer with
The metal (Ti/Au, TiN etc.) that p-GaN can form Schottky contacts obtains Schottky contacts by techniques such as removing, annealing again.
In some more specifically embodiments, the system of III group-III nitride diode component of the polarization superjunction is made
Making method also may include:
(1) Material growth: the structure of growth p-GaN/AlGaN/GaN/ substrate, in this structure, when the hole in p-GaN
When concentration is too high, 2DEG and 2DHG are not present in the interface of two hetero-junctions.The acquisition pattern of p-GaN mainly passes through growth
Acceptor impurity Mg, Zn etc. are mixed when GaN, are swashed again by carrying out annealing in growth apparatus (such as MOCVD, MBE, PLD) later
It is living to obtain.
(2) it anode, cathode preparation: is first patterned, reuses etching apparatus (ICP inductively coupled plasma, RIE
Reactive ion etching, ECR electron cyclotron resonace etc.) the HR GaN in anode and cathode region is etched away, then pass through filming equipment (such as
E-book evaporation, magnetron sputtering, thermal evaporation etc.) the deposit ohmic metal on AlGaN, it is carried out finally by short annealing (RTA)
Alloying realizes the preparation of Ohmic electrode.
(3) prepared by anode: it is first graphical, the metal of Ohmic contact can be formed with p-GaN using one layer of filming equipment deposition
(such as Ni/Au, Pd/Pt/Au etc.), then Ohmic contact is obtained by techniques such as removing, annealing.Or use filming equipment deposition one
Layer obtains schottky junctions by techniques such as removing, annealing again with the p-GaN metal (Ti/Au, TiN etc.) that can form Schottky contacts
Touching.
(4) part passivation: mask is made using electrode or other insulating layers, the p-GaN of non-electrode region is handled, is made
Be changed into high resistant GaN；The mode of processing includes ion implanting, plasma surface passivation or high temperature passivation etc.；Wherein from
The element of son injection includes F, N, Ar, H etc., it is preferred that can be in H2Or NH3The plasma surface passivation is carried out under atmosphere
Or in 300~800 DEG C of progress high temperature passivation.
The material of aforesaid substrate can be the combination of silicon, sapphire, silicon carbide, any one or more in gallium nitride, but
It is without being limited thereto.III group-III nitride diode component preparation process of polarization superjunction provided by the invention is simple, can be to avoid excessive
Etching injury, process window is big, small to the damage of device, and repeatability is high, low in cost, is easy to be mass produced.
Explanation that the technical solution of the present invention is further explained with reference to the accompanying drawings and embodiments.
Please refer to shown in Fig. 1 is to be realized in a typical embodiments of the invention using high resistant cap and p-type gate technique
The structural schematic diagram of the polarization enhanced diode component of superjunction (by taking AlGaN/GaN device as an example).This device can by
It is raw on AlGaN/GaN hetero-junctions (including as the GaN layer as the first semiconductor 2 and the AlGaN layer as the second semiconductor 3)
The long p-GaN layer as the 4th semiconductor layer 4, then by the p-GaN layer 4 other than anode region in a manner of passivation or ion implanting
Become the high resistant GaN as third semiconductor layer 9, the 4th semiconductor is closely connect in the horizontal direction with third semiconductor.Cause
This, the high resistant GaN layer 9 between anode 7 and cathode 6 can generate negative polarization with the AlGaN layer 3 of lower section, heterogeneous at this
It will form the two-dimensional hole gas of high concentration at junction interface.When device is in OFF state, the electric field between anode 7 and cathode 6 can be equal
Even distribution, and 7 following region of anode is still p-GaN layer 4, can effectively raise the energy band below of anode 7 using p-type material, is made
It obtains entire device and obtains enhanced performance.
It is similar, when material epitaxy, can also on AlGaN/GaN hetero-junctions one layer of the extension high resistant for mixing Mg GaN layer
9, then Local activation is carried out to 7 following region of anode with low-energy electron beam radiation mode and obtains p-GaN layer 4.In this device junction
In structure, enhanced p-type grid structure and polarization superjunction structure be it is integrated, can be realized by p-GaN layer 4 it is enhanced, close
Also it can use p-GaN layer 4 when state to release to two-dimensional hole gas, obtain uniform field distribution.Meanwhile this device
Technique avoids etching technics complicated and rambunctious, greatly reduces technology difficulty.
It should be noted that HR GaN and p-GaN is not necessarily to be formed by way of above-mentioned mutual inversion of phases, it can also
By secondary epitaxy p-GaN or the materials of other p-types is grown, the p-NiO as ALD (atomic layer deposition) is grown can also generation
For p-GaN, in the case, HR GaN and p-GaN thickness can also be different.
Fig. 1 and Fig. 2 is please referred to, uses high resistant cap and p-type grid in the typical embodiments that the present embodiment is related to
A kind of production method of III group-III nitride diode of the polarization superjunction that technology is realized may include steps of:
(1) AlGaN/GaN epitaxial layer and p-GaN are epitaxially grown on the substrate, wherein GaN with a thickness of 1 μm -8 μm,
AlGaN with a thickness of 14nm-30nm, wherein the molar content of Al element is 15%-30%, p-GaN with a thickness of 50-110nm,
Mg doping concentration is 1019Magnitude；
(2) mesa-isolated is carried out, ion implanting or plasma can be used as mask using photoresist or deielectric-coating
Body etching；
(3) anode and cathode region is performed etching as mask using photoresist, carves p-type doping layer, is put into later
Electron beam deposition platform deposit ohmic contact metal Ti/Al/Ni/Au (20nm/130/nm/50nm/150nm) simultaneously remove clear
It washes, 890 DEG C of 30s is carried out to sample later and anneal to form Ohmic contact, respectively anode and cathode；
(4) it is removed also with electron beam deposition Ni/Au (50/150nm), as mask in nitrogen using photoresist
The lower 400 DEG C of 10min annealing of gas atmosphere forms Ohmic contact or Schottky contacts with the 4th semiconductor of p-type, completes the production of anode.
(5) ion implanting is carried out (preferably using ion implantation apparatus using anode and cathode as the mask of ion implanting
, injection element can be F, H, N etc., and wherein ion implantation energy is answered lower, is not enter two-dimensional electron gas channel region
Preferably), so that ion implanted regions is become high resistance area, after the completion of ion implanting, carry out 400 DEG C of 10min annealing and repair damage, complete device
The production of part.
Referring to Fig. 1 and Fig. 3, high resistant cap and p-type are used in the typical embodiments that the present embodiment is related to
Another production method of III group-III nitride diode of the polarization superjunction that gate technique is realized may include steps of:
(1) it is epitaxially grown on the substrate AlGaN/GaN epitaxial layer and mixes the unactivated high resistant GaN of Mg, wherein the thickness of GaN
Degree is 1 μm -8 μm, AlGaN with a thickness of 14nm-30nm, wherein the molar content of Al element is 15%-30%, high resistant GaN
With a thickness of 50-110nm, Mg doping concentration is 1019Magnitude；
(2) mesa-isolated is carried out, ion implanting or plasma can be used as mask using photoresist or deielectric-coating
Body etching；
(3) anode and cathode region is performed etching as mask using photoresist, carves p-type doping layer, is put into later
Electron beam deposition platform deposit ohmic contact metal Ti/Al/Ni/Au (20nm/130/nm/50nm/150nm) simultaneously remove clear
It washes, 890 DEG C of 30s is carried out to sample later and anneal to form Ohmic contact, respectively anode and cathode；
(4) it is lithographically formed anode region 7, part is carried out to the high resistant GaN of anode region in a manner of low-energy electron beam radiation
Activation recycle electron beam deposition Ni/Au (50/150nm) to be shelled so that the high resistant GaN of anode region becomes p-GaN
From 400 DEG C of 10min annealing form Ohmic contact or Schottky contacts with p-GaN in a nitrogen atmosphere, complete the production of device.
The working principle of aforementioned polarization superjunction diode is as follows: cut-in voltage Vth is positive value, as anode voltage Va < Vth
When, anode is exhausted with the two-dimensional electron gas under p-GaN, so device is in close state.Meanwhile the two of double heterojunction interface
Dimensional electron gas and two-dimensional hole gas are excreted to cathode 6 and anode 7 by the effect of reversed bias voltage respectively, stay in Liang Ge hetero-junctions circle
The positive and negative charge in face is distributed the electric fields uniform of cathode 6 and anode 7.When 7 biasing of anode reaches Vg > Vth, anode and p-
Two-dimensional electron gas under GaN is inducted, while the two-dimensional electron gas at double heterojunction interface and two-dimensional hole gas reappear, and make anode
5 and cathode 6 be connected, device is in the open state.
Due to the presence of high resistant GaN cap and 2DHG, can effectively shielded surfaces state it is right during HF switch
The capture of 2DEG acts on, and reduces current collapse, improves the dynamic characteristic of device.
Diode device structure of the invention is simple, using p-GaN anode, can improve electric current by conductivity modulation effect
Density reduces conducting resistance, and wherein third, the 4th semiconductor can pass through the techniques such as injection, plasma bombardment and thermal diffusion
Mode and the mutual inversion of phases for realizing p-type and high resistant, simple process can be low in cost to avoid excessive etching injury, is easy to carry out
Large-scale production.It should be noted that " anode region, the cathode zone " that refers in the present invention refers to immediately below anode and cathode
Region；" non-electrode region " refers to " region other than anode and cathode ".
It should be appreciated that the technical concepts and features of above-described embodiment only to illustrate the invention, its object is to allow be familiar with this
The personage of item technology cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all
Equivalent change or modification made by Spirit Essence according to the present invention, should be covered by the protection scope of the present invention.
Claims (12)
1. a kind of III group-III nitride diode component of the superjunction that polarizes, characterized by comprising:
First hetero-junctions comprising the first semiconductor and the second semiconductor being formed on the first semiconductor, described the second half lead
Body has the band gap for being wider than the first semiconductor, and is formed with two-dimensional electron gas in first heterojunction structure；
Second hetero-junctions comprising second semiconductor and the third semiconductor being formed on second semiconductor, it is described
Third semiconductor has the band gap for being narrower than second semiconductor, is formed with two-dimensional hole gas in second hetero-junctions；
4th semiconductor is formed on second semiconductor and closely connect with third semiconductor, and can be different by first
Two-dimensional electron gas in matter knot exhausts；
Anode and cathode, wherein the anode includes the first anode and second plate being electrically connected to each other, the first anode and
Cathode is electrically connected with the two-dimensional electron gas in first hetero-junctions, and the second plate is connect with the 4th semi-conductor electricity.
2. III group-III nitride diode component of polarization superjunction according to claim 1, it is characterised in that: described the first half
Conductor, the second semiconductor, third semiconductor material be selected from III group-III nitride；Preferably, the material packet of first semiconductor
Include GaN；Preferably, the material of second semiconductor includes AlxGa(1-x)N, AlInGaN or InxAl(1-x)N, 0 x≤1 <；It is excellent
Choosing, the material of the third semiconductor includes high resistant or intrinsic GaN, high resistant or eigen I nGaN, high resistant or eigen I nN, or
GaO；4th semiconductor is p-type semiconductor；Preferably, the material of the 4th semiconductor includes that the broad stopband of p-type is partly led
Body；It is furthermore preferred that the wide bandgap semiconductor of the p-type includes III group-III nitride of p-type；It is furthermore preferred that III race's nitrogen of the p-type
Compound includes p-type GaN, p-type InGaN or p-type InN；It is furthermore preferred that the wide bandgap semiconductor includes p-NiO or p-GaO.
3. III group-III nitride diode component of polarization superjunction according to claim 1 or 2, it is characterised in that: described the
Four semiconductors are combined closely on the direction vertical with the axis of the III group-III nitride diode component with third semiconductor.
4. III group-III nitride diode component of polarization superjunction according to claim 1, it is characterised in that: first sun
Pole is wholely set with second plate.
5. III group-III nitride diode component of polarization superjunction according to claim 1 or 4, it is characterised in that: described the
Four semiconductors are covered by second plate；And/or Ohmic contact or Schottky are formed between the second plate and the 4th semiconductor
Contact；And/or the first anode and cathode and the second semiconductor form Ohmic contact.
6. III group-III nitride diode component of polarization superjunction according to claim 1, it is characterised in that: when described the
When the voltage applied on two anodes is greater than a cut-in voltage, the diode component is in the open state, and the cut-in voltage is extremely
It is enough to form two dimension in the regional area for making to be located at the first hetero-junctions immediately below second plate and the 4th semiconductor contact less
The first anode is simultaneously electrically connected by electron gas with cathode；And when the voltage applied on the second plate is less than the cut-in voltage
When, the diode component is in close state；Preferably, the minus earth.
7. the production method of III group-III nitride diode component of the superjunction that polarizes described in any one of claim 1-6, feature
Be include:
The first semiconductor, the second semiconductor and the 4th semiconductor are set gradually on substrate,
Make anode and cathode, the anode includes the first anode and second plate being electrically connected to each other, and make the first anode and
Cathode is electrically connected with the two-dimensional electron gas in first hetero-junctions, and second plate and the 4th semiconductor is made to form Ohmic contact
Or Schottky contacts；And
Processing is doped to the 4th semiconductor being distributed between anode and cathode and forms third semiconductor.
8. production method according to claim 7, characterized by comprising: at least deposited with Metallo-Organic Chemical Vapor,
Any mode in molecular beam epitaxy, atomic layer deposition, physical vapour deposition (PVD) and magnetron sputtering grow to be formed the first semiconductor,
Second semiconductor and the 4th semiconductor；Preferably, the substrate includes gallium nitride, silicon carbide, silicon or Sapphire Substrate.
9. production method according to claim 7, characterized by comprising: at least through ion implanting, High temperature diffusion and
Any mode in corona treatment is doped processing to the 4th semiconductor, to form third semiconductor；Preferably,
The doped chemical wherein used includes F, N, Ar or H；Alternatively, oxidation processes are carried out to the 4th semiconductor by high-temperature thermal oxidation,
To form third semiconductor.
10. the production method of III group-III nitride diode component of the superjunction that polarizes described in any one of claim 1-6, feature
Be include:
The first semiconductor, the second semiconductor, third semiconductor are set gradually on substrate；
The first anode and cathode are made, and the first anode and cathode is made to be electrically connected with the two-dimensional electron gas in first hetero-junctions
It connects；
Processing is doped to the third semiconductor close to first anode side, forms the 4th semiconductor；And
Second plate is made, and second plate and the 4th semiconductor is made to form Ohmic contact or Schottky contacts.
11. manufacturing method according to claim 10, characterized by comprising: at least heavy with Metallo-Organic Chemical Vapor
Any mode in product, molecular beam epitaxy, atomic layer deposition, physical vapour deposition (PVD) and magnetron sputtering, which is grown, to be formed the first half and leads
Body, the second semiconductor and third semiconductor；Preferably, the substrate includes gallium nitride, silicon carbide, silicon or Sapphire Substrate.
12. manufacturing method according to claim 10, characterized by comprising: at least through ion implanting and high annealing
Active mode or low-energy electron radioactivation mode are doped processing to third semiconductor, to form the 4th semiconductor；It is excellent
Choosing, wherein the doped chemical used includes Mg or Zn.
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