CN104332504A - GaN-based heterojunction schottky diode device and preparing method thereof - Google Patents
GaN-based heterojunction schottky diode device and preparing method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 82
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- 239000000463 material Substances 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
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- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 2
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 238000000926 separation method Methods 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
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- H—ELECTRICITY
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Abstract
The invention relates to a GaN-based heterojunction schottky diode device and a preparing method thereof. The GaN-based heterojunction schottky diode device comprises a substrate and an epitaxial layer which grows on the substrate, wherein the epitaxial layer comprises a stress buffer layer, a GaN layer and a heterostructure barrier layer which are arranged from bottom to top. The anode area of the epitaxial layer is etched for forming a recessed trough. A low work function metal layer is plated on the recessed trough and partial surface of the heterostructure barrier layer through vapor plating. A high work function metal layer is plated above the low work function metal layer and the planar area of the heterostructure barrier layer through vapor plating. The high work function metal layer and the low work function metal layer form a mixed anode. Ohmic metal is plated on the cathode area through vapor plating for forming a cathode. The epitaxial layer is integrally covered by a passivation insulating layer. The insulating layer is etched for forming an electrode window. According to the GaN-based heterojunction schottky diode device, combination of mixed anode metal and anode recessed trough technique is realized; current under forward bias is activated in advance through the side wall of the anode recessed trough; reverse leakage current is cut off through the high work function metal layer on the surface of the heterostructure barrier layer under reverse bias, thereby realizing separation of forward and reverse current channels, and achieving a technical object of the GaN-based heterojunction schottky diode device with low turn-on voltage and low reverse leakage current.
Description
Technical field
The present invention relates to field of semiconductor devices, be specifically related to a kind of GaN base heterojunction schottky diode device and preparation method thereof.
Background technology
Be that the third generation semiconductor material with wide forbidden band of representative has broad stopband, high strike electric field strength, high saturated electron drift velocity, high heat conductance, the heterogeneous interface two-dimensional electron gas excellent material property feature such as high with GaN, compared to Si material, GaN device is applicable to the power electronic device making high-power capacity, high switching speed altogether more.Compared with conventional Si devices, GaN device can carry higher power density, has higher energy conversion efficiency, and the volume and weight of whole system can be made to reduce, thus reduces system cost.And due to the superiority on its electric property, GaN base semi-conducting material is widely used in power electronic device field, especially applies and have huge advantage on the schottky diode.
Although diode structure is the simplest, due to its Stability and dependability, and the diversity of function and become the GaN base power electronic device be most widely used.The high concentration two-dimensional electron gas (2DEG) that AlGaN/GaN heterojunction schottky diode (SBD) is existed by its heterogeneous interface forms conducting channel, compare body material GaN base SBD, it has lower conducting resistance and larger power output, devices function energy consumption is very low, is applicable to the making of high-power SBD.Relatively traditional junction diode, Schottky diode has larger advantage.On the one hand, as majority carrier device, there is not the minority carrier storage effect of traditional junction diode in Schottky diode, can reach switching speed faster in switching process.On the other hand, relative junction diode, Schottky diode forward voltage drop is less, and switching power loss is far smaller than traditional junction diode.In general, Schottky diode is applicable to being applied to switch and rectifying device field in middle low voltage range very much.
But, for current AlGaN/GaN heterojunction SBD device, still there are a series of technical issues that need to address.How reducing cut-in voltage, do not affect device reverse leakage current simultaneously, is the key breakthrough point of high power switch application.When lower cut-in voltage makes SBD as rectification or switching device, can open at lower voltages, reduce the loss of switching process, effectively improve the forward current of device simultaneously.
The mode of the conventional SBD of reduction cut-in voltage is that the potential barrier by reducing Schottky contacts realizes, and generally selects metal material compared with low work function as the material of Schottky contacts.Although do the cut-in voltage that effectively can reduce SBD like this, because Schottky barrier reduces, under reverse voltage, SBD declines to the cut-off effect of electric current, reverse current increases, this causes device cannot turn off under oppositely, and reverse energy loss increases, and causes very large threat to the fail safe of device.So reducing cut-in voltage and reducing reverse leakage current is two contradictory elements.A high performance SBD needs under the prerequisite not increasing reverse leakage current, effectively reduces the cut-in voltage of device.
Reduce cut-in voltage for AlGaN/GaN based schottky diode and reduce reverse leakage current, domestic and international scientific research personnel has expanded some researchs.In up-to-date achievement in research, the people such as the S.Yoshida of Furukawa company propose a kind of field effect Schottky diode (FESBD) of high low work function metal mixed electrode, achieve cut-in voltage lower than 0.1V, reverse breakdown voltage is higher than the device property of 400V.The people such as the Min-Woo Ha of South Korea Seoul university it is also proposed a kind of groove structure heterojunction SBD to reduce the cut-in voltage of device, and cut-in voltage has been reduced to 0.73V.The people such as Hong Kong University of Science and Thchnology Wanjun Chen devise a kind of lateral field-effect rectifier (L-FER), anode adopts the combination of ohmic contact and Schottky contacts, and by the mode that F ion below Schottky contacts is injected, cut-in voltage is reduced to 0.63V, and puncture voltage remains on 390V simultaneously.Although said method reduces cut-in voltage for AlGaN/GaN based schottky diode do not affect reverse leakage current simultaneously, but because operating process is complicated and technology is single, the space declined is also had to the modulation of cut-in voltage, urgently the improvement of further technological means.
Summary of the invention
The technical problem that the present invention solves overcomes the deficiencies in the prior art, provides a kind of GaN base heterojunction schottky diode device and preparation method thereof.
The present invention adopts the low turn-on voltage of high low work function multilayer anode, the characteristic of low reverse current leakage, and in conjunction with anode groove structure, the cut-in voltage of further reduction Schottky diode, technique is simple, reproducible, improves the Stability and dependability of device.
In order to realize above-mentioned object, technical scheme of the present invention is: provide a kind of GaN base heterojunction schottky diode device, the epitaxial loayer that this device comprises substrate and grows in substrate, wherein, epitaxial loayer comprises stress-buffer layer, GaN layer and heterostructure barriers layer from lower to upper.Groove is formed in epitaxial loayer anode region etching, the part surface of groove and heterostructure barriers layer covers evaporation low work function metal, above low work function metal and heterostructure barriers layer plane region evaporation high work-function metal layer, high both low work function metal form multilayer anode.Cathode zone place evaporation ohmic metal layer forms the negative electrode contacted with heterostructure barriers layer, and epitaxial loayer entirety covers passivation insulation, and etching insulating layer outputs electrode window through ray.
Heterostructure barriers layer is one in AlGaN, AlInN, AlInGaN, AlN material or any several combination, and this heterostructure barriers layer is non-doped layer or N-shaped doped layer; GaN layer is high resistant GaN layer.
Ohmic contact metal layer is Ti/Al/Ni/Au alloy or Ti/Al/Ti/Au alloy or Ti/Al/Mo/Au alloy.
Anode dry etching depth of groove is between 1nm ~ 1 μm.
Low work function metal includes but not limited to Ti/Au alloy or Al/Au alloy, and other possess the various metal or alloy of low work function;
High work-function metal layer includes but not limited to Ni/Au alloy or Pt/Au alloy or Pd/Au alloy, and other possess the various metal or alloy of high work function;
Insulating passivation layer layer is SiO
2, SiN
x, Al
2o
3, AlN, HfO
2, MgO, Sc
2o
3, Ga
2o
3, AlHFO
x, one in HFSiON or any several combination.
Insulating passivation layer thickness can control in 1nm ~ 1 μm.
Meanwhile, the invention provides a kind of preparation method of GaN base heterojunction schottky diode device, comprise the following steps:
A, utilize metal organic chemical vapor deposition or molecular beam epitaxy, growth stress resilient coating, GaN layer and heterostructure barriers layer successively on substrate;
B, employing photoetching technique, dry etching epitaxial loayer completes device isolation;
C, utilization are dry-etched in anode region and etch groove, manifest the anode region surface be made up of groove surfaces and hetero barrier layer surface;
D, utilize photoetching technique, cathode ohmic contact metal level on cathode zone evaporation;
E, groove surfaces and hetero barrier layer surface form region surface on evaporation low work function schottky metal layer;
F, utilize photoetching technique, at low work function Schottky contact metal surface and heterostructure barriers layer surperficial evaporation high work function schottky metal layer;
G, utilize plasma enhanced chemical vapor deposition or ald or physical vapour deposition (PVD), megohmite insulant in contact interface deposition, as passivation layer insulating barrier;
H, employing photoetching technique, wet etching or dry etching remove the insulating barrier material of anode, cathode electrode contact area.
The present invention also provides the preparation method of another GaN base heterojunction schottky diode device, comprise the following steps: A, utilize metal organic chemical vapor deposition or molecular beam epitaxy, growth stress resilient coating, GaN layer and heterostructure barriers layer successively on substrate;
B, employing photoetching technique, dry etching epitaxial loayer completes device isolation;
C, utilization are dry-etched in the anode region be located on epitaxial loayer and etch groove, and groove is etched in GaN layer by heterostructure barriers layer, manifest the anode region surface be made up of groove surfaces and hetero barrier layer surface;
D, utilize evaporation process, cathode ohmic contact metal level on cathode zone evaporation;
E, groove and hetero barrier layer surface form region surface on evaporation low work function metal;
F, utilize plasma enhanced chemical vapor deposition or ald or physical vapour deposition (PVD), megohmite insulant in contact interface deposition, as insulating barrier;
G, utilize evaporation process, at low work function metal, heterostructure barriers layer surface and the surperficial evaporation high work-function metal layer of passivation insulation, form field plate structure;
H, employing photoetching technique, wet etching or dry etching remove the megohmite insulant of anode, cathode electrode contact area.
The present invention also provides a kind of preparation method of GaN base heterojunction schottky diode device, comprises the following steps:
A, utilize metal organic chemical vapor deposition or molecular beam epitaxy, growth stress resilient coating, GaN layer and heterostructure barriers layer successively on substrate;
B, employing photoetching technique, dry etching epitaxial loayer completes device isolation;
C, utilization are dry-etched in the anode region be located on epitaxial loayer and etch groove, and groove is etched in GaN layer by heterostructure barriers layer, manifest the anode region surface be made up of groove surfaces and hetero barrier layer surface;
D, utilize evaporation process, cathode ohmic contact metal level on cathode zone evaporation;
E, groove and hetero barrier layer surface form region surface on evaporation low work function schottky metal layer;
F, utilize evaporation process, on low workfunction metal surface, heterostructure barriers layer surface and the surface of the heterostructure barriers layer between anode and negative electrode evaporation high work-function metal layer, form floating becket structure;
G, utilize plasma enhanced chemical vapor deposition or ald or physical vapour deposition (PVD), megohmite insulant in contact interface deposition, as insulating barrier;
H, employing photoetching technique, wet etching or dry etching remove the megohmite insulant of anode, cathode electrode contact area.
The present invention realizes the combination of multilayer anode metal and anode groove technology, under forward bias, electric current is opened in advance by anode recess sidewall, by the high-work-function metal cut-off reverse leakage current on heterostructure barriers layer surface under reverse biased, achieve the separation of forward and reverse current channel, low turn-on voltage can be reached, the technical goal of the GaN base heterojunction schottky diode device of low reverse current leakage.
For prior art Problems existing, the present invention proposes a kind of novel GaN base heterojunction schottky diode device architecture, adopts mixing work function anode structure, make device obtain lower cut-in voltage and lower reverse leakage current at anode; Present invention employs selected zone dry etching method, make anode metal directly and high concentration, the 2DEG raceway groove contact of high mobility, reduces efficient anode electric leakage area, and reduce further cut-in voltage, improve device performance simultaneously.
The present invention proposes can realize low turn-on voltage, low reverse current leakage, the characteristics such as large On current based on the anode groove of AlGaN/GaN heterostructure and the Schottky barrier diode of mixing work function anode electrode.The configuration achieves the separation of the forward and reverse electric current of SBD: under forward bias, anode metal covers anode recess sidewall, and two-dimensional electron gas and metal directly contact increases electron tunneling probability, the unlatching in advance of anode side walls conductive path.And adopt low workfunction metal contact to reduce Schottky contact barrier further, cut-in voltage is reduced further.And under reverse bias, adopt the high-work-function metal in planar structure can play depletion action to the two-dimensional electron gas of AlGaN/GaN heterogeneous interface, thus block conductive channel reduction reverse leakage current.And anode groove structure also reduces effective electric leakage region of anode further, suppress reverse leakage current further.
Accompanying drawing explanation
Fig. 1 is the GaN base heterojunction schottky diode device architecture schematic diagram of the embodiment of the present invention 1;
Fig. 2 is the structural representation of the GaN base heterojunction schottky diode device of the embodiment of the present invention 2;
Fig. 3 is the GaN base heterojunction schottky diode device architecture schematic diagram of the embodiment of the present invention 3;
Fig. 4 A-F is the process schematic representation of the GaN base heterojunction schottky diode device of the embodiment of the present invention 1 and preparation method thereof;
embodiment
Specifically the detailed construction of device of the present invention and procedure are further described below in conjunction with accompanying drawing.
Embodiment 1
The present embodiment is a kind of GaN base schottky diode device possessing low turn-on voltage as Fig. 1 gives, and it comprises: substrate 1 and on substrate 1 by stress-buffer layer 2 and GaN layer 3 and the heterostructure barriers layer 4 of MOCVD or MBE growth.Cathode zone place evaporation ohmic contact metal layer forms ohmic contact layer 5.GaN layer 3 and heterostructure barriers layer 4 anode region form groove 11, the surface of groove 11 and heterostructure barriers layer 4 is by evaporation low work function metal 5, low work function metal 5 surface and heterostructure barriers 4 surperficial evaporation high work-function metal layer 6 layer by layer, by PECVD growth of passivation insulating barrier 7, etching insulating layer outputs electrode window through ray.
The manufacture method of above-mentioned GaN base heterojunction schottky diode device, as shown in Fig. 4 A-F, comprises the following steps:
1. metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) is utilized, growth stress resilient coating 2, high resistant GaN layer 3 and heterostructure barriers layer 4 successively on Si substrate or SiC substrate or Sapphire Substrate 1; As shown in Figure 4 A;
2. after having etched device isolation, employing is dry-etched in GaN layer 3 and goes out groove 11 with heterostructure barriers layer 4 surface anode region etch, manifests the contact surface be made up of groove surfaces and heterostructure barriers layer surface; As shown in Figure 4 B;
3. adopt photoetching technique, in cathode zone ohmic contact regions, place outputs window, then evaporation ohmic contact metal layer 5; As shown in Figure 4 C;
4. photoetching technique is adopted, at groove 11 and the surperficial evaporation low work function metal 6 of potential barrier of heterogenous junction layer 4; As shown in Figure 4 D;
5. at low work function metal 6 and the surperficial evaporation high work-function metal layer 7 of potential barrier of heterogenous junction layer 4; As shown in Figure 4 E;
6. by plasma enhanced chemical vapor deposition (PECVD) or ald (ALD) or physical vapour deposition (PVD) (PVD) or magnetron sputtering, homoepitaxial one layer insulating 8;
7. by photoetching technique, utilize wet etching method to etch electrode zone, output electrode window through ray.So far, the preparation process of whole device is namely completed.Fig. 4 F is the device architecture figure of embodiment 1.
Embodiment 2
The present embodiment is a kind of the second structure possessing the GaN base schottky diode device of low turn-on voltage as Fig. 2 gives, it is roughly the same with the device architecture of embodiment 1, difference is, after evaporation low work function metal 6, first deposit passivation insulation 8, then evaporation high work-function metal layer 7, high-work-function metal 7 covers low work function metal 6, heterostructure barriers layer surface and passivation insulation 8 surface, high-work-function metal 7 rides over passivation insulation 8 surface, forms field plate structure 9.Field plate structure can the spike electric field at effective modulating anode edge, improves the voltage endurance of device.
Embodiment 3
The present embodiment is a kind of the second structure possessing the GaN base schottky diode device of low turn-on voltage as Fig. 3 gives, it is roughly the same with the device architecture of embodiment 1, difference is, after evaporation low work function metal 6,, heterostructure barriers layer surface evaporation high work-function metal layer 7 surperficial at low work function metal 6, the metal that anode is identical with high work-function metal layer 7 with the heterostructure barriers layer surface evaporation between negative electrode simultaneously, forms floating becket structure 10.Floating becket structure can the effectively distribution of electric field between modulator electrode, improves the voltage endurance of device.
Claims (10)
1. a GaN base heterojunction schottky diode device, the epitaxial loayer that device comprises substrate and grows in substrate, wherein, epitaxial loayer comprises stress-buffer layer, GaN layer and heterostructure barriers layer from lower to upper; It is characterized in that, the anode region etching be located on epitaxial loayer forms groove, groove is etched in GaN layer by heterostructure barriers layer, the part surface of groove and heterostructure barriers layer covers evaporation low work function metal, above low work function metal and the part planar region evaporation high work-function metal layer of heterostructure barriers layer; High and low both workfunction layers form multilayer anode; The cathode zone place evaporation ohmic metal be located on epitaxial loayer forms the negative electrode contacted with heterostructure barriers layer, and the epitaxial loayer entirety of remaining exposing surface covers insulating barrier.
2. GaN base heterojunction schottky diode device according to claim 1, it is characterized in that, described heterostructure barriers layer material comprises one or more following combination: AlGaN, AlInN, AlInGaN, AlN, and described heterostructure barriers layer is non-doped layer or N-shaped doped layer; GaN layer is high resistant GaN layer.
3. GaN base heterojunction schottky diode device according to claim 1, is characterized in that, described ohmic contact metal layer is Ti/Al/Ni/Au alloy or Ti/Al/Ti/Au alloy or Ti/Al/Mo/Au alloy.
4. the GaN base heterojunction schottky diode device according to any one of claims 1 to 3, is characterized in that, the described etched recesses degree of depth is between 1nm ~ 1 μm.
5. GaN base heterojunction schottky diode device according to claim 1, is characterized in that, described low work function metal comprises Ti/Au alloy or Al/Au alloy; Described high work-function metal layer comprises Ni/Au alloy or Pt/Au alloy or Pd/Au alloy.
6. GaN base heterojunction schottky diode device according to claim 1, is characterized in that, insulating layer material comprises one or more following combination: SiO
2, SiN
x, Al
2o
3, AlN, HfO
2, MgO, Sc
2o
3, Ga
2o
3, AlHFO
x, HFSiON.
7. GaN base heterojunction schottky diode device according to claim 1, is characterized in that, the thickness of insulating barrier is between 1nm ~ 1 μm.
8. a preparation method for GaN base heterojunction schottky diode device, is characterized in that, comprises the following steps:
A, utilize metal organic chemical vapor deposition or molecular beam epitaxy, growth stress resilient coating, GaN layer and heterostructure barriers layer successively on substrate;
B, employing photoetching technique, dry etching epitaxial loayer completes device isolation;
C, utilization are dry-etched in the anode region be located on epitaxial loayer and etch groove, and groove is etched in GaN layer by heterostructure barriers layer, manifest the anode region surface be made up of groove surfaces and hetero barrier layer surface;
D, employing evaporation process, cathode ohmic contact metal level on cathode zone evaporation;
E, groove and hetero barrier layer surface form region surface on evaporation low work function schottky metal layer;
F, employing evaporation process, at low work function schottky metal layer surface and heterostructure barriers layer surface evaporation high work function schottky metal layer;
G, utilize plasma enhanced chemical vapor deposition or ald or physical vapour deposition (PVD), megohmite insulant in contact interface deposition, as insulating barrier;
H, employing photoetching technique, wet etching or dry etching remove the megohmite insulant of anode, cathode electrode contact area.
9. a preparation method for GaN base heterojunction schottky diode device, is characterized in that, comprises the following steps:
A, utilize metal organic chemical vapor deposition or molecular beam epitaxy, growth stress resilient coating, GaN layer and heterostructure barriers layer successively on substrate;
B, employing photoetching technique, dry etching epitaxial loayer completes device isolation;
C, utilization are dry-etched in the anode region be located on epitaxial loayer and etch groove, and groove is etched in GaN layer by heterostructure barriers layer, manifest the anode region surface be made up of groove surfaces and hetero barrier layer surface;
D, utilize evaporation process, cathode ohmic contact metal level on cathode zone evaporation;
E, groove and hetero barrier layer surface form region surface on evaporation low work function schottky metal layer;
F, utilize plasma enhanced chemical vapor deposition or ald or physical vapour deposition (PVD), megohmite insulant in contact interface deposition, as insulating barrier;
G, utilize evaporation process, at low work function metal, heterostructure barriers layer surface and passivation insulation surperficial evaporation high work function schottky metal layer, form field plate structure;
H, employing photoetching technique, wet etching or dry etching remove the megohmite insulant of anode, cathode electrode contact area.
10. a preparation method for GaN base heterojunction schottky diode device, is characterized in that, comprises the following steps:
A, utilize metal organic chemical vapor deposition or molecular beam epitaxy, growth stress resilient coating, GaN layer and heterostructure barriers layer successively on substrate;
B, employing photoetching technique, dry etching epitaxial loayer completes device isolation;
C, utilization are dry-etched in the anode region be located on epitaxial loayer and etch groove, and groove is etched in GaN layer by heterostructure barriers layer, manifest the anode region surface be made up of groove surfaces and hetero barrier layer surface;
D, utilize evaporation process, cathode ohmic contact metal level on cathode zone evaporation;
E, groove and hetero barrier layer surface form region surface on evaporation low work function schottky metal layer;
F, utilize evaporation process, on low workfunction metal surface, heterostructure barriers layer surface and the surface of the heterostructure barriers layer between anode and negative electrode evaporation high work-function metal layer, form floating becket structure;
G, utilize plasma enhanced chemical vapor deposition or ald or physical vapour deposition (PVD), megohmite insulant in contact interface deposition, as insulating barrier;
H, employing photoetching technique, wet etching or dry etching remove the megohmite insulant of anode, cathode electrode contact area.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410323609.2A CN104332504A (en) | 2014-07-08 | 2014-07-08 | GaN-based heterojunction schottky diode device and preparing method thereof |
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| CN104882491A (en) * | 2015-02-12 | 2015-09-02 | 苏州捷芯威半导体有限公司 | Schottky diode and manufacturing method thereof |
| CN105118830A (en) * | 2015-08-03 | 2015-12-02 | 电子科技大学 | Enhanced HEMT of integrated SBD |
| CN106024914A (en) * | 2016-06-30 | 2016-10-12 | 广东省半导体产业技术研究院 | GaN-based schottky diode having hybrid anode electrode structure and preparation method thereof |
| CN106449773A (en) * | 2016-10-11 | 2017-02-22 | 扬州扬杰电子科技股份有限公司 | GaN-based Schottky diode structure and manufacturing method thereof |
| CN108962976A (en) * | 2018-06-29 | 2018-12-07 | 捷捷半导体有限公司 | Thin potential barrier GaN SBD device based on nano channel array and preparation method thereof |
| CN109545860A (en) * | 2018-11-20 | 2019-03-29 | 中山大学 | A kind of air bridge structure Schottky grid-control diode component and preparation method thereof |
| CN110518074A (en) * | 2019-07-23 | 2019-11-29 | 西安电子科技大学 | Alternate high current GaN Schottky diode of anode and cathode and preparation method thereof |
| CN111048597A (en) * | 2019-12-09 | 2020-04-21 | 中国电子科技集团公司第五十五研究所 | SBD device and preparation method thereof |
| CN111755530A (en) * | 2020-06-15 | 2020-10-09 | 西安电子科技大学 | AlGaN/GaN-based Schottky barrier diode based on double-anode structure and manufacturing method thereof |
| CN115084231A (en) * | 2022-07-19 | 2022-09-20 | 浙江大学 | Diode and manufacturing method thereof |
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| CN106449773B (en) * | 2016-10-11 | 2023-09-08 | 扬州扬杰电子科技股份有限公司 | GaN-based Schottky diode structure and manufacturing method thereof |
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| CN108962976A (en) * | 2018-06-29 | 2018-12-07 | 捷捷半导体有限公司 | Thin potential barrier GaN SBD device based on nano channel array and preparation method thereof |
| CN109545860A (en) * | 2018-11-20 | 2019-03-29 | 中山大学 | A kind of air bridge structure Schottky grid-control diode component and preparation method thereof |
| CN110518074A (en) * | 2019-07-23 | 2019-11-29 | 西安电子科技大学 | Alternate high current GaN Schottky diode of anode and cathode and preparation method thereof |
| CN111048597A (en) * | 2019-12-09 | 2020-04-21 | 中国电子科技集团公司第五十五研究所 | SBD device and preparation method thereof |
| CN111755530A (en) * | 2020-06-15 | 2020-10-09 | 西安电子科技大学 | AlGaN/GaN-based Schottky barrier diode based on double-anode structure and manufacturing method thereof |
| CN115084231A (en) * | 2022-07-19 | 2022-09-20 | 浙江大学 | Diode and manufacturing method thereof |
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