CN107393954B - A kind of GaN hetero-junctions vertical field effect pipe - Google Patents
A kind of GaN hetero-junctions vertical field effect pipe Download PDFInfo
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- 230000005669 field effect Effects 0.000 title claims abstract description 20
- 238000007667 floating Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 14
- 230000002441 reversible effect Effects 0.000 abstract description 14
- 230000008901 benefit Effects 0.000 abstract description 9
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 6
- 238000011084 recovery Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- 238000000034 method Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
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Abstract
The present invention relates to technical field of semiconductor device, are related to a kind of GaN hetero-junctions vertical field effect pipe.Schottky source is deposited between grid by the present invention using longitudinal discrete grid structure, forms the inverse anode for leading diode.The two-dimensional electron gas (2DEG) at grid lower channels is exhausted by the back potential barrier and notched gates collective effect that introduce the formation of p-type base area, and the etch thicknesses accuracy controlling threshold voltage for adjusting AlMN barrier layer can be passed through.Beneficial effects of the present invention are, under positive switch working state, have many advantages, such as that threshold voltage is adjustable, and conducting resistance is low, saturation current is big, OFF state is high pressure resistant, the high and low power consumption of working frequency；It is inverse lead working condition under, have that cut-in voltage is low, conducting resistance is low, the advantages that reverse withstand voltage is big, and reverse recovery time is short and low-power consumption.Its manufacturing process is compatible with tradition GaN hetero-junctions HEMT device simultaneously.Present invention is particularly suitable for GaN hetero-junctions longitudinal direction power field effect pipes.
Description
Technical field
The present invention relates to technical field of semiconductor device, are related to GaN hetero-junctions power field effect pipe.
Background technique
As the Typical Representative of third generation wide bandgap semiconductor, gallium nitride (GaN) has many excellent characteristics: high critical
Breakdown electric field (~3.5 × 106V/cm), high electron mobility (~2000cm2/ vs), high two-dimensional electron gas (2DEG) concentration
(~1013cm-2) and good high temperature operation capability etc..High electron mobility transistor based on AlGaN/GaN hetero-junctions
(HEMT) (or heterojunction field effect transistor HFET, modulation-doped FET MODFET, hereafter referred to collectively as HEMT device
Part) it has been applied in the RF/Microwaves such as wireless communication, satellite communication field.In addition, such based on broad stopband GaN material
Device has that OFF state pressure resistance or reverse BV are high, forward conduction resistance is low, working frequency is high, the characteristics such as high-efficient, can be with
Meet system more high-power to semiconductor devices, higher frequency, smaller volume, more low-power consumption and can more endure harsh environments
Requirement.
Field-effect tube occupies extremely important status in semiconductor field.In recent years, the field effect based on GaN heterojunction material
Should pipe have been achieved for large development.However, traditional GaN hetero junction field effect pipe is mostly transverse structure, shape is turned off in device
Under state, voltage is mainly born by the drift region between grid and drain electrode, since electric field is unevenly distributed in drift region, peak electric field
The gate edge close to drain terminal is appeared in, causes device to puncture in advance, inducing current avalanche, so that it is heterogeneous to play GaN
The advantage of high working frequency, low on-resistance and high voltage possessed by junction device.In powerful power electronic system, one
As freewheeling diode can be selected to be connected in parallel on switching tube both ends, to prevent generated induced electromotive force breakdown in circuit or burn
Switching tube.However, discrete freewheeling diode not only increases the volume and cost of system, and increases parasitic capacitance and post
Raw inductance, so as to cause switching loss increase.Traditional GaN PN junction diode is since cut-in voltage is excessive, and the sky of p-type GaN
Cave mobility is too low, is not appropriate for using as freewheeling diode.Therefore a kind of reversible longitudinal GaN hetero-junctions for leading work is developed
Field-effect tube is of great significance for practical application.
Summary of the invention
It is to be solved by this invention, aiming at above-mentioned tradition GaN hetero-junctions power field effect pipe there are the problem of, propose
A kind of GaN hetero-junctions of vertical structure is against conductivity type field-effect tube.In positive switch state, which has electric conduction for work
Hinder low, saturation current is big, OFF state pressure resistance and the high advantage of working frequency；In inverse lead under working condition, which, which has, is opened
Voltage is low, conducting resistance is low, the advantage that reverse withstand voltage is big and reverse recovery time is short.
The technical proposal adopted by the invention to solve the above technical problems is that: a kind of GaN hetero-junctions is inverse to lead field-effect tube, this
Invention is bilateral symmetry, including GaN N-type heavy doping substrate 1, the GaN lightly doped n type drift region 2 on substrate 1, position
In the AlMN layer 5 on the lightly doped n type drift region 2, the N-type drift region 2 and AlMN layer 5 constitute hetero-junctions, the N-type drift
It moves in area 2 and is provided with p-type base area 3 and the area floating P 10, the area JFET 12 between the p-type base area is located at the p-type base
Channel region 9 between area 3 and the AlMN floor 5, with the formed Ohmic contact of two-dimensional electron gas (2DEG) and the p-type base area 3
Source electrode 4, the grid 6 on the AlMN layer, the groove 13 positioned at 6 lower section of the grid, above AlMN layer 5
Schottky source 8, the gate medium 7 positioned at the chatted top AlMN layers of, the electric leakage positioned at 1 lower section of GaN N-type heavy doping substrate
Pole 11.
The total technical solution of the present invention reduces the Two-dimensional electron of heterojunction boundary using groove grid structure and p-type base area
Gas (2DEG) concentration realizes the modulation of threshold voltage to obtain higher threshold voltage；Utilize p-type base area and N-type drift region
GaN base PN junction and the area floating P are formed by bear standoff voltage, reduces OFF state electric leakage；Using different work functions metal with
The contact of AlMN barrier layer is formed by the different inverse cut-in voltages for leading diode of schottky barrier height modulation.It may be noted that
It is to have doping in the thickness of the AlMN barrier layer below grid, the Al component of AlMN barrier layer or AlMN barrier layer and mix
When miscellaneous distribution is different, to realize that the doping concentration of depth of groove corresponding to same threshold voltage and back barrier region can not
Together.
Specifically, M is one of Ga, In and Ga and the mixture of In in the AlMN layer 5.
Specifically, the thickness of the AlMN barrier layer 5 of 8 lower section of schottky source is greater than 10nm.
Specifically, the gate medium 7 is SiO2、Si3N4、AlN、Al2O3, MgO and HfO2One of.
Beneficial effects of the present invention are to work in positive switch state, which has conducting resistance low, saturation current
Greatly, OFF state pressure resistance and the high advantage of working frequency；Work is against when leading rectification state, the device is low with cut-in voltage, is connected
Resistance is low, the advantage that reverse withstand voltage is big and reverse recovery time is short, while its manufacturing process and traditional transverse direction GaN hetero-junctions HEMT
Device is compatible, reduces discrete device bring switching loss, improves the efficiency and stability of power electronic circuit system.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is present invention epitaxial growth N-type drift region schematic diagram in process flow；
Fig. 3 is the present invention area selective epitaxial growth floating P schematic diagram in process flow；
Fig. 4 is present invention selective epitaxial growth p-type GaN base area schematic diagram in process flow；
Fig. 5 is the schematic diagram in present invention area epitaxial growth JFET and channel region in process flow；
Fig. 6 is the schematic diagram that present invention epitaxial growth AlMN barrier layer in process flow forms 2DEG channel；
Fig. 7 is the schematic diagram that the present invention etches AlMN barrier layer in process flow；
Fig. 8 is the schematic diagram that the present invention deposits gate medium in process flow；
Fig. 9 is the cutting of the invention in process flow and the schematic diagram for forming source electrode Ohmic contact；
Figure 10 is the schematic diagram that the present invention forms back-side drain Ohmic contact in process flow；
Figure 11 is the schematic diagram that the present invention deposits gate metal in process flow；
Figure 12 is the schematic diagram that the present invention etches that gate medium forms schottky source and field plate completely in process flow；
Specific embodiment
With reference to the accompanying drawing, the technical schemes of the invention are described in detail:
The present invention propose a kind of high-performance GaN hetero-junctions against conductivity type field-effect tube, it is different from traditional lateral field-effect pipe,
The present invention deposits schottky source among two grids using longitudinal discrete grid structure.The present invention passes through etching AlMN gesture
Barrier layer, which reduces the concentration of the two-dimensional electron gas in channel (2DEG) with p-type base area, makes device have higher threshold voltage.Due to
For the device using vertical structure and there are the area floating P, field distribution is uniform more than traditional transversal device, and device can be made to realize height
Pressure resistance, low on-resistance while, save wafer area.It is inverse lead working condition under, the unlatching of Schottky diode of the invention
Voltage is far below the cut-in voltage of GaN PN junction, and conducting power consumption when reversed afterflow can be effectively reduced.It is closed when the device is in
When state pressure resistance or reverse withstand voltage state, base area and drift region are formed by depletion region and shield the electric field for being directed toward schottky junction, Xiao
The field plate structure of special base junction two sides can reduce the electric field strength at main knot edge, subtract the reverse leakage current of schottky junction substantially
It is few, the temperature stability of schottky junction is improved, to reduce the leakage current of the device in a high voltage state.Discrete gate energy
Gate area is enough effectively reduced, the gate charge Qg that the resistance to pressure of OFF state generates is greatly reduced.Compared with traditional transversal device, this hair
Bright peak electric field not appears in surface.And appear near the area P and the interface of N-type drift region, can effectively it inhibit by surface
Current collapse caused by state and interfacial state, to reduce the switching loss of device.And the afterflow Schottky diode is mostly sub
Device, almost without few sub- storage under positive working condition, reverse recovery time will be far smaller than GaN PN junction, can be substantially
The working frequency of circuit system is promoted, switching loss is reduced.Therefore the inverse field-effect tube of leading of GaN hetero-junctions provided by the present invention works
In positive switch state, have conducting resistance low, saturation current is big, OFF state pressure resistance and the high advantage of working frequency.It is led inverse
Under working condition, which has the advantage that cut-in voltage is low, conducting resistance is low, and reverse withstand voltage is big and reverse recovery time is short.
And the device preparation technology announced of the present invention and tradition GaN HEMT process compatible.
As shown in Figure 1, GaN hetero-junctions of the invention is inverse to lead field-effect tube, including GaN N-type heavy doping substrate 1, it is located at lining
GaN lightly doped n type drift region 2 on bottom 1, the AlMN layer 5 on the lightly doped n type drift region 2, N type drift region
2 and AlMN layer 5 constitutes hetero-junctions, is provided with p-type base area 3 and the area floating P 10 in the N-type drift region 2, is located at the p-type base
The area JFET 12 between area, the channel region 9 between the p-type base area 3 and AlMN layer 5, with two-dimensional electron gas
The source electrode 4 of the formed Ohmic contact of (2DEG) and the p-type base area 3, the grid 6 on the AlMN layer are located at described
The groove 13 of 6 lower section of grid, the schottky source 8 above AlMN layer 5, the gate medium 7 positioned at the chatted top AlMN layers of, position
Drain electrode 11 in 1 lower section of GaN N-type heavy doping substrate.
The operation principle of the present invention is that:
Under the common depletion action of notched gates and p-type base area, the two-dimensional electron gas (2DEG) in channel below grid is dense
Degree reduces, and realizes higher threshold voltage.When grid institute's making alive is less than cut-in voltage, there is no electronics at the channel below grid
Accumulation, 2DEG conducting channel disconnect, and cannot form current path；When grid applies positive voltage, and is greater than cut-in voltage, grid
Electronics is accumulated at channel below pole, forms the current path from drain-to-source, and device is opened.
When grid institute's making alive is greater than threshold voltage, source electrode applies 0 current potential, and when drain electrode applies positive potential, device is opened, place
In positive working condition.
When grid institute's making alive is less than threshold voltage, source electrode applies 0 current potential, and when drain electrode applies positive voltage, device, which is in, to be closed
State.Drain voltage is mainly formed by PN junction by p-type base area and N-type drift region and undertakes, and electric field is in p-type base area and N-type drift region
Interface nearby reaches maximum value.Traditional transversal device is compared, field distribution of the invention is more uniform, as drain voltage increases
Greatly, region and intermediate region extension, the area floating P can reduce near p-type base area and N-type drift region PN junction depletion region downwards
Electric field strength, improve device voltage endurance capability.The depletion region that PN junction is formed by can effectively shield the electricity for being directed toward schottky junction
, so that schottky junction is can reduce the electric field strength at main knot edge from bearing high pressure, the field plate structure of schottky junction two sides,
It avoids schottky junction in knot edge breakdown, effectively reduces the reverse leakage of Schottky contacts, improve the temperature of schottky junction
Stability.
When grid and drain electrode apply 0 current potential, when source electrode applies positive potential, which is in inverse and leads working condition, works as source electrode
When voltage is more than the cut-in voltage of schottky junction, electric current flows through drain electrode by source electrode.The present invention can be by using different work functions
Metal adjusts the cut-in voltage of schottky junction.
The present invention can be by adjusting the growth thickness of AlMN barrier layer below P-type grid electrode come adjusting threshold voltage.
The present invention provides a kind of optional preparation technology flow charts, comprising the following steps:
Step 1: such as Fig. 2, epitaxial growth N-type drift region.
Step 2: such as Fig. 3, the area selective epitaxial growth floating P.
Step 3: such as Fig. 4, selective growth p-type base area.
Step 4: such as Fig. 5, the area epitaxial growth JFET and channel region.
Step 5: such as Fig. 6, epitaxial growth AlMN barrier layer.
Step 6: etching AlMN barrier layer such as Fig. 7.
Step 7: depositing gate medium such as Fig. 8.With atomic layer deposition (ALD) or plasma enhanced chemical vapor deposition
(PECVD)
Mode deposit dielectric SiO2、Si3N4、AlN、Al2O3, MgO or HfO2Deng and dielectric layer it is graphical.
Step 8: such as Fig. 9, cutting simultaneously forms source electrode Ohmic contact.
Step 9: forming back-side drain Ohmic contact such as Figure 10.
Step 10: depositing gate metal such as Figure 11.
Step 11: forming schottky source and field plate such as Figure 12.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
The equivalent structure or equivalent flow shift that bright specification and accompanying drawing content are done is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (3)
1. a kind of GaN hetero-junctions vertical field effect pipe, including be cascading from bottom to up drain electrode (11), N-type substrate
(1), N-type drift region (2), AlMN layers (5) and active area, the N-type drift region (2) and AlMN layers (5) composition hetero-junctions；It is described
The right and left in N-type drift region (2) all has p-type base area (3) and the area floating P (10), and p-type base area (3) and the area floating P
(10) it is symmetric with the median vertical line of N-type drift region (2), p-type base area (3) are located above the area floating P (10)；Described
There are the area JFET (12) between the p-type base area (3) of the right and left, have between the p-type base area (3) and AlMN layers described (5)
There are channel region (9)；The active area includes source electrode (4), grid (6) and Schottky anode (8), wherein the Schottky sun
Pole (8) is located at right above the area JFET (12), and Schottky anode (8) is in T-shaped, the median vertical line of Schottky anode (8) with
Device median vertical line is overlapped, and active area is in full symmetric distributed architecture with the median vertical line of Schottky anode (8)；The source electrode
(4) surface two sides on the device, and source electrode (4) is contacted through AlMN layers (5) and channel region (9) with p-type base area (3) and shape
At Ohmic contact；Grid (6) is located between source electrode (4) and Schottky anode (8), grid (6) and Schottky anode (8) with
There are gate medium (7) between AlMN layers (5), grid (6) is embedded in AlMN layers of (5) upper layer and forms groove (13)；The source electrode (4)
Upper layer along gate medium (7) upper surface to close to Schottky anode (8) direction extend, grid (6) upper layer is along gate medium (7)
Surface extends to two sides；The thickness of AlMN (5) below the Schottky anode (8) is greater than 10nm；M in AlMN layers described (5)
For one kind of Ga or In or Ga and In.
2. a kind of GaN hetero-junctions vertical field effect pipe according to claim 1, which is characterized in that the gate medium (7) is
SiO2、Si3N4、AlN、Al2O3, MgO and HfO2One of.
3. a kind of GaN hetero-junctions vertical field effect pipe according to claim 2, which is characterized in that the groove (13)
Depth is 0 between 20nm.
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| CN109004017B (en) * | 2018-07-18 | 2020-09-29 | 大连理工大学 | HEMT device with polarization junction longitudinal leakage current barrier layer structure and preparation method thereof |
| CN111293176B (en) * | 2020-02-25 | 2021-04-20 | 电子科技大学 | GaN longitudinal reverse conducting junction field effect transistor |
| CN114447101B (en) * | 2022-01-24 | 2023-04-25 | 电子科技大学 | Vertical GaN MOSFET integrated with freewheeling channel diode |
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| JP2008053312A (en) * | 2006-08-22 | 2008-03-06 | Toyota Motor Corp | Semiconductor device |
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