CN106252404B - A kind of enhanced MIS HEMT device in longitudinal direction with high K dielectric slot - Google Patents
A kind of enhanced MIS HEMT device in longitudinal direction with high K dielectric slot Download PDFInfo
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- CN106252404B CN106252404B CN201610902631.1A CN201610902631A CN106252404B CN 106252404 B CN106252404 B CN 106252404B CN 201610902631 A CN201610902631 A CN 201610902631A CN 106252404 B CN106252404 B CN 106252404B
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- 230000004888 barrier function Effects 0.000 claims abstract description 40
- 239000003989 dielectric material Substances 0.000 claims abstract description 23
- 238000009413 insulation Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 10
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 description 12
- 239000010931 gold Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000008094 contradictory effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
Abstract
The invention belongs to technical field of semiconductors, are related to a kind of enhanced MIS HEMT device in the longitudinal direction with high K dielectric slot.The present invention introduces high K dielectric material below source electrode, and high K dielectric material extends to buffer layer；The barrier layer opposite with buffer layer conduction type, and barrier layer and two side contacts of grid are introduced under channel layer.Barrier layer and high K dielectric carry out two-dimentional depletion action to buffer layer and improve its doping concentration, significantly reduce the conducting resistance of device；Under reverse blocking state, high K dielectric modulates longitudinal electric field and promotes device pressure resistance.Meanwhile the present invention uses longitudinal conducting channel of the p-type doping blocking layer pinch off 2DEG and buffer layer that contact with slot grid side wall, is controlled by the voltage applied in insulated gate electrodes conducting channel, to realize enhanced.The device preparation technology that the present invention is announced is compatible with traditional handicraft.
Description
Technical field
The invention belongs to technical field of semiconductors, are related to a kind of enhanced MIS HEMT in the longitudinal direction with high K dielectric slot
(High Electron Mobility Transistor, high electron mobility transistor) device.
Background technique
High electron mobility transistor (HEMT) based on GaN material, due to high electron saturation velocities, high density two dimension electricity
Sub- gas (2DEG) and higher critical breakdown electric field, so that it has in high current, low-power consumption, high frequency and high-voltage switch gear application field
There is huge application prospect.
Lateral GaN HEMT makes it in high frequency and low-power consumption application field by blueness because of high density two-dimensional electron gas (2DEG)
It looks at, basic device structure is as shown in Figure 1.But transverse direction GaN HEMT has the disadvantage in that under 1, off state easily in grid
Peak electric field is formed close to drain terminal side, device is caused to puncture in advance, limits the raising of pressure resistance；2, there is buffering under off state
Layer leakage current, excessive buffer layer leakage current will lead to device and puncture in advance, limit GaN HEMT in terms of high pressure
Using；3, transverse direction GaN HEMT device mainly bears pressure resistance, therefore high voltage gan by the active area between grid and drain electrode
HEMT needs biggish grid leak spacing, and device is caused to occupy excessive chip area, is unfavorable for the development trend of miniaturization.
In order to overcome lateral GaN HEMT device disadvantage mentioned above, researcher is expanded to longitudinal GaN HEMT structure in the industry
Research.Document (Masakazu KANECHIKA, et.al.A Vertical Insulated Gate AlGaN/GaN
Heterojunction Field-Effect Transistor,Japanese Journal of Applied Physics,
VOL.46, NO.21, pp.L503-L505, May 2007) propose longitudinal direction GaN HEMT structure, as shown in Fig. 2, it effectively changes
It has been apt to the problems of above-mentioned transverse direction GaN HEMT.Compared with lateral GaN HEMT, there are following advantages by longitudinal GaN HEMT:
1, device mainly bears pressure resistance by the longitudinal pitch between grid and drain electrode, therefore can reduce surface size, saves chip face
Product；2, the PN junction formed between p-type barrier layer and N-type semiconductor buffer layer can effectively stop from source electrode injected electrons, from
And suppression device buffer layer leakage current；3, since the grid of device surface and source electrode are low-voltage, device grids are nearby not
It will form high field area, therefore can fundamentally avoid lateral GaN HEMT due to mentioning caused by gate electric field concentration effect
Preceding breakdown.
For conventional longitudinal direction GaN HEMT, 2DEG can not be fully utilized to realize conducting, conducting electric current in longitudinal device
It needs to flow through buffer layer, this makes conducting resistance much higher than transversal device；And with the raising of breakdown voltage, buffer layer need to be reduced
Doping concentration simultaneously increases its thickness, this sharply increases conducting resistance, and constrains the forward current ability of device, therefore often
Advising longitudinal direction GaN HEMT device, there are breakdown voltages and this contradictory relation of conducting resistance.
Summary of the invention
The purpose of the present invention proposes the enhanced MIS HEMT device in longitudinal direction with high K dielectric slot aiming at the above problem
Part reduces the conducting resistance of device while reaching and improving device electric breakdown strength, alleviates or solve pressure resistance and conducting resistance
Contradictory relation.
The technical scheme is that as shown in Figure 3, a kind of enhanced MIS HEMT device in longitudinal direction with high K dielectric slot
Part, including drain electrode 1, substrate 2, buffer layer 3, barrier layer 5, channel layer 7 and the barrier layer 8 being cascading from bottom to up；
The both ends of the barrier layer 8 have source electrode 6, and the lower surface of the source electrode 6 passes through barrier layer 8 and channel layer 7 and barrier layer 5
Upper surface contact；The centre of two source electrodes 6 has insulated gate structures；Between the source electrode 6 and insulated gate structures
8 upper surface of barrier layer has dielectric passivation layer 9；The source electrode 1 and drain electrode 6 are Ohmic contact；It is characterized in that, institute
Stating has the high K dielectric slot filled with high K dielectric material 4 below source electrode 6, the high K dielectric material 4 extends to vertically downward
In buffer layer 3 and 4 top of high K dielectric material is contacted with source electrode 6；The relative dielectric constant of the high K dielectric material 4 is greater than slow
Rush the relative dielectric constant of layer 3；The substrate 2 and channel layer 7 are n-type doping, and the barrier layer 5 is that p-type is adulterated, and barrier layer
5 with two side contacts of grid；The insulated gate structures are run vertically down, and sequentially pass through barrier layer 8,7 and of channel layer
Barrier layer 5 simultaneously extends into buffer layer 3；The insulated gate structures surround grid by insulation gate medium 10 and by insulation gate medium 10
Electrode 11 is constituted.
Further, the transverse width of the insulated gate structures gradually increases from bottom to up.
Further, the thickness of insulation gate medium 10 extension vertically downward gradually increases from top to bottom.
Further, the high K dielectric material 4 is made of the high K dielectric of a variety of differing dielectric constants from top to bottom, and from
It is successively increased up to lower dielectric constant.
Further, which is characterized in that 4 bottom of high K dielectric material is contacted with substrate 2.
Further, the material that the insulation gate medium 10 uses is Al2O3、HfO2、SiO2One or more of combinations.
Further, the channel layer 7 and barrier layer 8 form hetero-junctions.
The invention has the benefit that
It 1, is the high critical breakdown electric field characteristic for making full use of GaN material, the present invention introduces high K dielectric below source electrode
Material, under blocking state, high K dielectric is to buffer layer assisted depletion and modulates longitudinal electric field, and device may be implemented high OFF state and hit
Wear voltage.
2, it being exhausted since barrier layer and high K dielectric carry out two dimension to buffer layer, buffer layer can use the highly doped area N,
To make the conducting resistance of device be substantially reduced.
3, being typically due to the 2DEG that polarization generates makes AlGaN/GaN material system be open type channel, adopts in the present invention
The barrier layer adulterated with p-type and gate contact, longitudinal conducting channel of barrier layer pinch off 2DEG and buffer layer, to realize enhancing
Type controls conducting channel by the voltage applied in insulated gate electrodes.
Detailed description of the invention
Fig. 1 is conventional lateral HEMT device structure.
Fig. 2 is conventional longitudinal HEMT device structure.
Fig. 3 is the enhanced MIS HEMT device structure in the longitudinal direction with high K dielectric slot proposed by the present invention.
Fig. 4 be insulated gate structures transverse width proposed by the present invention gradually increase from bottom to up have high K dielectric slot
The enhanced MIS HEMT device structure in longitudinal direction.
Fig. 5 is the longitudinal direction with high K dielectric slot that insulation grid medium thickness proposed by the present invention gradually increases from top to bottom
Enhanced MIS HEMT device structure.
Fig. 6 is that the high K dielectric slot proposed by the present invention being made of a variety of differing dielectric constant high K dielectric materials longitudinally enhances
Type MIS HEMT device structure.
Fig. 7 is the longitudinal enhanced MIS of high K dielectric slot of high K dielectric material proposed by the present invention bottom and substrate contact
HEMT device structure.
Fig. 8 is that the enhanced MIS HEMT device structure in the longitudinal direction with high K dielectric slot proposed by the present invention and tradition are longitudinal
The reverse withstand voltage field distribution of HEMT structure compares figure.
Fig. 9 is that the enhanced MIS HEMT device structure in the longitudinal direction with high K dielectric slot proposed by the present invention and tradition are longitudinal
The curve of output of HEMT structure compares figure.
Specific embodiment
With reference to the accompanying drawings and examples, the technical schemes of the invention are described in detail:
Embodiment 1
Fig. 3 shows a kind of full structure cell schematic diagram of enhanced MIS HEMT device in the longitudinal direction with high K dielectric slot.
This example device includes:
The enhanced MIS HEMT device in a kind of longitudinal direction with high K dielectric slot, including what is be cascading from bottom to up
Drain electrode 1, substrate 2, buffer layer 3, barrier layer 5, channel layer 7 and barrier layer 8, source electrode 6 passes through barrier layer 8 and channel layer 7 is straight
Up to 5 upper surface of barrier layer；Insulated gate structures are set among two source electrodes 6；Between the source electrode 6 and insulated gate structures
8 upper surface of barrier layer have dielectric passivation layer 9；The source electrode 1 and drain electrode 6 are Ohmic contact.It is characterized in that, institute
Stating below source electrode 6 is a high K dielectric slot, and high K dielectric material 4 extends in buffer layer 3 and top is contacted with source electrode 6；
The relative dielectric constant of the high K dielectric material 4 is greater than the relative dielectric constant of semiconductor buffer layer 3；The substrate 2 and channel
Layer 7 is n-type doping, and the barrier layer 5 is that p-type is adulterated, and barrier layer 5 and two side contacts of grid；The insulated gate structures edge
Vertical direction extends downwardly, and sequentially passes through barrier layer 8, channel layer 7 and barrier layer 5 and extends into buffer layer 3；The insulated gate
Pole structure is constituted by insulation gate medium 10 and by the encirclement gate electrode 11 of insulation gate medium 10.
The enhanced MIS HEMT device in longitudinal direction provided by the invention with high K dielectric slot alleviates tradition longitudinal direction GaN
The contradictory relation of HEMT device pressure resistance and conducting resistance.Under reverse blocking state, high K dielectric is to buffer layer assisted depletion and modulates
Longitudinal electric field promotes device breakdown voltage；Simultaneously as the introducing of high K dielectric slot, buffer layer is blocked layer and high K is situated between
Matter slot two dimension exhausts and improves its doping concentration, significantly reduces the conducting resistance of device, so that it is good to ensure that device has
Forward current driving capability.
Embodiment 2
Compared with Example 1, the transverse width of the insulated gate structures of this example device gradually increases from bottom to up, other knots
Structure is same as Example 1, as shown in Figure 4.The transverse width of insulated gate structures gradually increases from bottom to up, can be effectively relieved
Curvature effect avoids electric field concentration that device is caused to puncture in advance, promotes device electric breakdown strength.
Embodiment 3
Compared with Example 1, the insulation gate medium 10 of this example device vertically downward extension thickness from top to bottom by
Cumulative to add, other structures are same as Example 1, as shown in Figure 5.Insulation grid medium thickness gradually increases from top to bottom can be effective
Ground reduces gate capacitance, improves the dynamic property of device, but the accumulation effect of grid will receive weakening.
Embodiment 4
Compared with Example 1, the high K dielectric material 4 of this example device is from top to bottom by two kinds and the above differing dielectric constant
High K dielectric constitute, and from top to bottom dielectric constant increase, other structures are same as Example 1, as shown in Figure 6.Using a variety of
High K dielectric material and dielectric constant increases from top to bottom, can to carry out assisted depletion modulation to buffer layer longitudinal with significantly more efficient
Electric field, to further promote device electric breakdown strength.
Embodiment 5
Compared with Example 1,4 bottom of high K dielectric material of this example device is contacted with substrate 2, other structures and embodiment 1
It is identical, as shown in Figure 7.High K dielectric runs through entire buffer layer, can carry out assisted depletion to entire buffer layer with significantly more efficient,
It modulates internal longitudinal electric field and promotes device breakdown voltage.
The described enhanced MIS HEMT device in longitudinal direction with high K dielectric slot of above-mentioned several embodiments of the invention,
It can be using the combination of one or more of GaN, AlN, AlGaN, InGaN, InAlN as substrate 2, buffer layer 3, barrier layer
5, the material of channel layer 7 and barrier layer 8；For passivation layer 9, the common material of industry is SiNx, Al can also be used2O3, AlN etc.
Material identical with passivation layer can be used in dielectric material, insulation gate medium 10；Source electrode 6, drain electrode 1 are generally closed using metal
Gold, there are commonly Ti/Al/Ni/Au or Mo/Al/Mo/Au etc.；Gate electrode 11 generally uses the biggish metal alloy of work function, example
Such as Ni/Au or Ti/Au.
Fig. 8, Fig. 9 be the enhanced MIS HEMT device structure in the longitudinal direction with high K dielectric slot proposed by the present invention respectively with
Field distribution compares figure when the reverse withstand voltage of traditional longitudinal direction MIS HEMT structure and curve of output compares figure.Using Sentaurus
TCAD software is emulated, and two kinds of structures are 11.2 μm in device longitudinal size, and lateral dimension is 4 μm, buffer layer thickness
It is 10 μm, under conditions of high K dielectric material relative dielectric constant is 60, the breakdown voltage of structure proposed by the invention is from biography
The 1283V of system longitudinal direction MIS HEMT is increased to 1993V, and breakdown voltage improves 55%；The conducting resistance of structure proposed by the present invention
From the 1.22m Ω cm of tradition longitudinal direction MIS HEMT2It is reduced to 0.61m Ω cm2, conducting resistance reduction by 50%.
Claims (7)
1. the enhanced MIS HEMT device in a kind of longitudinal direction with high K dielectric slot, including the leakage being cascading from bottom to up
Electrode (1), substrate (2), buffer layer (3), barrier layer (5), channel layer (7) and barrier layer (8)；The both ends of the barrier layer (8)
With source electrode (6), the lower surface of the source electrode (6) passes through barrier layer (8) and channel layer (7) and barrier layer (5) upper surface
Contact；The centre of two source electrodes (6) has insulated gate structures；Gesture between the source electrode (6) and insulated gate structures
Barrier layer (8) upper surface has dielectric passivation layer (9)；The source electrode (6) and drain electrode (1) are Ohmic contact；Its feature exists
In there is the high K dielectric slot filled with high K dielectric material (4) in the lower section, the high K dielectric material (4) prolongs vertically downward
It extends in buffer layer (3) and is contacted at the top of high K dielectric material (4) with source electrode (6)；Opposite Jie of the high K dielectric material (4)
Electric constant is greater than the relative dielectric constant of buffer layer (3)；The substrate (2) and channel layer (7) are n-type doping, the barrier layer
(5) it is adulterated for p-type, and barrier layer (5) and two side contacts of grid；The insulated gate structures are run vertically down, according to
It is secondary through barrier layer (8), channel layer (7) and barrier layer (5) and to extend into buffer layer (3)；The insulated gate structures are by exhausted
Edge gate medium (10) and by insulation gate medium (10) surround gate electrode (11) constitute.
2. the enhanced MIS HEMT device in a kind of longitudinal direction with high K dielectric slot according to claim 1, feature exist
In the transverse width of the insulated gate structures gradually increases from bottom to up.
3. the enhanced MIS HEMT device in a kind of longitudinal direction with high K dielectric slot according to claim 1, feature exist
In the thickness of insulation gate medium (10) extension vertically downward gradually increases from top to bottom.
4. the enhanced MIS HEMT device in a kind of longitudinal direction with high K dielectric slot according to claim 1, feature exist
In the high K dielectric material (4) is made of the high K dielectric of a variety of differing dielectric constants from top to bottom, and dielectric is normal from top to bottom
Number successively increases.
5. the enhanced MIS HEMT device in a kind of longitudinal direction with high K dielectric slot according to any one of claims 1-4,
It is characterized in that, high K dielectric material (4) bottom is contacted with substrate (2).
6. the enhanced MIS HEMT device in a kind of longitudinal direction with high K dielectric slot according to claim 5, the insulated gate
The material that medium (10) uses is Al2O3、HfO2、SiO2One or more of combinations.
7. a kind of enhanced MIS HEMT device in longitudinal direction with high K dielectric slot according to claim 6 any one,
It is characterized in that, the channel layer (7) and barrier layer (8) form hetero-junctions.
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| CN102723355A (en) * | 2012-06-29 | 2012-10-10 | 电子科技大学 | Groove-gate semiconductor power device |
| CN105140302A (en) * | 2015-07-14 | 2015-12-09 | 电子科技大学 | GaN vertical heterojunction field-effect transistor with charge compensation voltage-resistant structure |
| CN105845724A (en) * | 2016-06-17 | 2016-08-10 | 电子科技大学 | Accumulation vertical HEMT device |
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| DE102004046697B4 (en) * | 2004-09-24 | 2020-06-10 | Infineon Technologies Ag | High-voltage-resistant semiconductor component with vertically conductive semiconductor body regions and a trench structure, and method for producing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723355A (en) * | 2012-06-29 | 2012-10-10 | 电子科技大学 | Groove-gate semiconductor power device |
| CN105140302A (en) * | 2015-07-14 | 2015-12-09 | 电子科技大学 | GaN vertical heterojunction field-effect transistor with charge compensation voltage-resistant structure |
| CN105845724A (en) * | 2016-06-17 | 2016-08-10 | 电子科技大学 | Accumulation vertical HEMT device |
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