CN102881716A - Field-induced tunneling enhanced HEMT (high electron mobility transistor) device - Google Patents
Field-induced tunneling enhanced HEMT (high electron mobility transistor) device Download PDFInfo
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Abstract
The invention belongs to the technical field of semiconductor devices, and particularly relates to a field-induced tunneling enhanced HEMT (high electron mobility transistor) device. The field-induced tunneling enhanced HEMT device is different from conventional AlGaN/GaN HEMT devices in that metal sources are in Schottky barrier contact instead of ohm contact in conventional structures; and metal gates are not positioned between the sources and drains but form insulating gate electrodes at the edges, away from the drains, of the sources through etching grooves. Field-control conductive channels are realized by means of the insulating layer and groove technology, field control of the field-control conductive channels is realized by voltage applied to the groove gate electrodes, and electrons subjected to band bending can directly tunnel barriers to be accumulated below the channels in gate modulation when forward voltage is applied to the gate electrodes, so that normally closed channels are realized, and frequency characteristics of the device can be promoted without affecting reverse voltage withstand capability of the device. Meanwhile, the preparation process of the device is compatible to traditional processes, and thereby solid foundation is established for the GaN power integration technology.
Description
Technical field
The invention belongs to technical field of semiconductor device, relate to High Electron Mobility Transistor (HEMT).
Background technology
Gallium nitride (GaN) is one of representative of third generation wide bandgap semiconductor, has good characteristic: high critical breakdown electric field (~ 3.5 * 10
6V/cm), high electron mobility (~ 2000cm
2/ Vs), high two-dimensional electron gas (2DEG) concentration (~ 10
13Cm
-2), high hot operation ability.Obtained extensive use based on the High Electron Mobility Transistor (HEMT) of AlGaN/GaN heterojunction (or HFET HFET, modulation-doped FET MODFET below is referred to as the HEMT device) at semiconductor applications.Therefore such device has the characteristics such as reverse blocking voltage is high, forward conduction resistance is low, operating frequency is high, can satisfy that system is more high-power to semiconductor device, higher frequency, the more requirement of small size and more abominable hot operation.
For AlGaN/GaN HEMT device, enhancement mode (often pass type) HEMT device has more advantage than depletion type (open type) HEMT device, and its realization technology is extremely problems of concerns of researchers.Document X.Hu, et.al., " Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate; " Electron.Lett.vol.36, no.8, pp.753-754, Apr.2000 have reported that employing P type GaN grid have realized a kind of enhanced AlGaN/GaNHEMT device.Document Y.Ohmaki, et.al., " Enhancement mode AlGaN/AlN/GaN high electronmobility transistor with low on-state resistance and high breakdown voltage; " Jpn.J.Appl.Phys., vol.45, no.44, pp.L1168-L1170, Nov.2006 have reported by attenuate AlGaN layer and have realized a kind of accurate enhanced AlGaN/GaN HEMT device.Document W. Saito, et.al., " Recessed-gate structure approach towardnormally off high-voltage AlGaN/GaN HEMT for power electronics applications; " IEEE Trans.Electron Devices, vol.53, no.2, pp.356 – 362, Feb.2006 have reported that the employing slot grid structure realized a kind of accurate enhancement mode high pressure AlGaN/GaN HEMT.Document Y. Uemoto, et.al., " Gate injection transistor (GIT)-Anormally-off AlGaN/GaN power transistor using conductivity modulation; " IEEE Trans.ElectronDevices, vol.54, no.12, pp.3393-3399, Dec.2007 have reported the GIT device with positive threshold voltage.Document Y.Cai, et.al., " High-performance enhancement-mode AlGaN/GaN HEMTs using Fluoride-basedPlasma Treatment; " IEEE Electron Device Letters, vol.26, No.7, pp.435-437, Jul., 2005 have reported employing fluoro plasma processing grid region, can effectively inject the AlGaN barrier region to the fluorine ion with negative electrical charge, so that threshold voltage produces drift, and the short annealing when utilize forming grid, the damage of effectively removing plasma generation is so that the long device of 1 μ m grid obtains preferably performance.Document PALACIOS T, et al., " High-performance E-mode AlGaN/GaNHEMTs; " IEEE Electron Device Letters, 2006,27 (6): 428-430 has reported the enhancement mode GaNHEMT device of the long 160nm of grid, the way that adopts grid grooving and fluorine plasma treatment to combine, utilize InGaN back of the body potential barrier, obtained the suitable performance with depletion type GaN HEMT.Document LI G. W., et al., " Threshold voltage control in Al
0.72Ga
0.28N/AlN/GaN HEMTs by work-function engineering, " IEEE Electron Device Letters, 2010,31 (9): 954-956 has reported on the AlGaN surface and has adopted atomic layer deposition (ALD) 4nm Al
2O
3, both avoided metal to contact with the direct of AlGaN, reduced again the distance of grid and raceway groove.The method has increased the control of grid for raceway groove.Document FUJIWARA T., et al., " Enhancement-mode m-plane AlGaN/GaN heterojunction field-effecttransistors " Appl Phys Express, 2009,2 (1): 011001-011002 has reported and has made non-polarized m face AlGaN/GaN HEMT.Document KURODA M, et al., " Nonpolar AlGaN/GaNmetal-insulator-semiconductor heterojunction field-effect transistors with a normally off operation; " IEEE Transactions on Electron Device, 2010,57 (2): 368-372 has reported that making non-polarized a face AlGaN/GaN MIS-HFET realizes threshold voltage 1.3V.Document Yuhua Wen, et al., " Enhancement-modeAlGaN/GaN heterostructure field effect transistors fabricated by elective area growth technique; " Appl.Phys.Lett.98072108,2011 have reported regional extension (SAG) technology of selecting that adopts, carry out diauxic growth at thin layer AlGaN/GaN heterojunction, realized enhancement device.
Although the research work of enhancement mode HEMT has obtained huge progress in recent years, the present threshold voltage of enhanced AlGaN/GaN HEMT all lower (mostly less than 1V), performance is wanted obviously poor than depletion type HEMT.Usually device threshold voltage requires more than 3～5V, just can avoid the misoperation that causes owing to noise, satisfies the power switch application.Wherein, reduce Al component or the thin barrier layer of growing and reduced 2DEG concentration in the raceway groove, increased dead resistance and the ON resistance of AlGaN/GaN HEMT, so Al component and barrier layer thickness are merely able to reduce in limited scope; Growing InGaN block layer or p-GaN block layer are made enhancement mode HEMT, and the block layer makes grid die down for the control of raceway groove, has reduced the mutual conductance of device, and is unfavorable for AlGaN/GaN HEMT high-frequency work; Recessed grid etching can exhaust grid below 2DEG concentration effectively, greatly improves threshold voltage, but recessed grid etching need to accurately be controlled etching depth and reduce the etching injury that plasma treatment causes; Although F base plasma treatment is the method for a kind of very promising making enhancement mode HEMT at present, might run into implant damage and high-pressure work stability problem.
Summary of the invention
The invention provides a kind of field and cause tunnelling enhanced AlGaN/GaN HEMT device.The present invention causes the specific implementation technology and method of tunnelling according to the field, adopt insulating barrier-groove and vertical gate technology to realize that the field causes tunnelling enhanced AlGaN/GaNHEMT device.Field provided by the present invention cause tunnelling enhanced AlGaN/GaN HEMT not only have high pressure, at a high speed, the advantage such as low-power consumption, also with AlGaN/GaN HEMT device for power switching process compatible.
Technical solution of the present invention is:
A kind of causes tunnelling enhancement mode HMET device, and its structure comprises silicon substrate 3, forms GaN heterojunction, grid structure, source configuration and drain electrode structure by GaN layer 1 and MGaN layer 2 as shown in Figure 1, and wherein M is the III family element except Ga; Described drain electrode structure by the upper strata that is positioned at the GaN heterojunction, be AlGaN layer 2 surface, and form with the metal leakage utmost points 4 that MGaN layer 2 surface forms ohmic contact; Described grid structure is the groove insulated gate structure, comprises the groove of an etching in the GaN heterojunction, and the groove inwall has and GaN layer 1 and MGaN layer 2 contacted insulated gate medium 6, and inside grooves is filled metal and formed metal gate electrode 7; Described source configuration with source metal electrode 5 formation of MGaN layer 2 surface formation Schottky Barrier Contact, adopts insulated gate medium 6 isolated by near grid structure and away from drain electrode structure between source metal electrode 5 and the metal gate electrode 7.
In the technique scheme: 1, described III family element M except Ga adopts Al or In usually; 2, insulated gate medium 6 materials can be selected SiO
2, Si
3N
4, AlN, Al
2O
3, MgO or Sc
2O
33, the etching technics that adopts of the groove of etching in the GaN heterojunction is that dry etching or wet etching all can; 4, the insulated gate medium 6 of groove inwall can adopt ALD or pecvd process deposit.
Provided by the invention causes tunnelling enhancement mode HMET device, and different from conventional AlGaN/GaN HEMT device (as shown in Figure 2) is that source electrode among the present invention (S) is the ohmic contact in Schottky Barrier Contact rather than the conventional structure; Grid (G) no longer is positioned between source electrode and the drain electrode (D) but forms the groove insulation gate electrode by etched recesses at the source electrode edge away from drain electrode.The operation principle of this device is: can be with distribution by near the AlGaN layer that applies at the notched gates electrode electromotive force (electric field) the regulation and control gate electrode, to reach the tunnelling conducting of electronics from source metal to the 2DEG raceway groove, the unlatching of realization device forward; During without applying electrical potential, source metal and semiconductor consist of Schottky Barrier Contact at the notched gates electrode, and device has blocking ability.Thus, by the conducting and cut-off control of grid to source electrode, reached unlatching and shutoff control to device, thereby realized enhanced AlGaN/GaN HMET device function.Simultaneously, depletion region is not at gate edge at the source electrode edge during owing to cut-off state, and it will can not produce high electric field at gate edge, is conducive to reduce the impact that high electric field lost efficacy on grid.
Field control conducting channel (as shown in Figure 1) to content of the present invention, the GaN heterojunction is take AlGaN/GaN as example, the AlGaN/GaN heterojunction boundary forms 2DEG, does not mate with the existence of the factor such as interfacial stress mainly due to the lattice of GaNg and AlGaN bi-material to form.This devices use the mode of piezoelectricity and spontaneous polarization realized the existence of the 2DEG conducting channel of device.Because the 2DEG that polarization produces is so that the AlGaN/GaN material system is the open type raceway groove.In order to realize normal pass type raceway groove required for the present invention, the present invention has made up the perpendicular grooves grid structure, the 2DEG concentration of heterojunction boundary can be with distribution relevant with it, and the variation that can be with can realize by changing electric field, therefore realize the variation that to be with by changing electric field, when grid adds forward voltage behind the band curvature electronics directly tunnelling cross potential barrier and accumulate in that (Fig. 3 (a) adds the front conduction band schematic diagram of grid voltage for device under the raceway groove of grid modulation, Fig. 3 (b) adds conduction band schematic diagram after the grid voltage for device), and then the 2DEG concentration of regulation and control heterojunction boundary, realize normal pass type conducting channel.Fig. 4 can be with the simulation result that changes under the different gate voltages, Fig. 5 is the simulation result of device transfer characteristic curve, and Fig. 6 is the simulation result of output characteristic curve.
Especially embodied following details in the design process of the present invention:
1, vertical-channel runs through whole MGaN layer and can normally open to guarantee device.
2, source metal can adopt the material of different work functions, but can make device that preferably forward characteristic is arranged than the source metal of low work function.
3, the selection of gate dielectric layer thickness should take into full account following two factors: (a) thickness of dielectric layers is excessively thin, and gate medium easily punctures; (b) gate dielectric layer is blocked up, and grid-control ability processed weakens.
4, the present invention can have following derived structure (see figure 8): make the gate metal source electrode of jumping over, this derived structure can make the electric field between grid and the source electrode distribute again, in fact equal to have formed a field plate, prevented the appearance at high electric field peak, so that device withstand voltage improves.
5, the drain material among the present invention can also adopt schottky metal.
Beneficial effect of the present invention shows:
1, usually because the 2DEG that polarization produces so that the AlGaN/GaN material system is the open type raceway groove, and has realized normal pass type raceway groove among the present invention, so that device is beneficial to control more.
2, because this structure has overcome short-channel effect well, therefore so that the frequency characteristic of device is outstanding, characteristic frequency significantly improves, and can be applied in the high-frequency circuit.
3, field of the present invention cause tunnelling enhanced AlGaN/GaN HEMT can be compatible with traditional handicraft.
Description of drawings
Fig. 1 field causes tunnelling enhanced AlGaN/GaN HEMT device architecture schematic diagram.
The conventional AlGaN/GaN HEMT of Fig. 2 device architecture schematic diagram.
Fig. 3 field causes tunnelling enhanced AlGaN/GaN HEMT device conduction band schematic diagram, (a) V
GS=0; (b) V
GS0.
Under the different grid voltages that Fig. 4 emulation obtains the field is caused the modulation of conduction band energy in tunnelling enhanced AlGaN/GaNHEMT device channel.
Fig. 5 field causes the transfer characteristic curve of tunnelling enhanced AlGaN/GaN HEMT device.
Fig. 6 field causes the output characteristic curve of tunnelling enhanced AlGaN/GaN HEMT device.
Fig. 7 field causes the process chart of tunnelling enhanced AlGaN/GaN HEMT device: (a) substrate; (b) etching spill grid groove; (c) ohmic contact; (d) make the source metal electrode; (e) deposition insulating layer; (f) make the gate metal electrode.
Fig. 8 field causes the derived structure schematic diagram of tunnelling enhanced AlGaN/GaN HEMT device.
Equipotential lines distribution map when Fig. 9 field causes the cut-off of tunnelling enhanced AlGaN/GaN HEMT device.
Figure 10 field causes tunnelling enhanced AlGaN/GaN HEMT device forward when opening near the grid, and equipotential lines distributes.
Among the above-mentioned figure: the 1st, GaN layer, the 2nd, MGaN layer (M is the III family element except Ga), the 3rd, silicon substrate, the 4th, the metal leakage utmost point of ohmic contact, the 5th, the source metal electrode of Schottky Barrier Contact, 6 insulated gate media, 7 metal gate electrodes, the 8th, the source metal electrode of ohmic contact.
Embodiment
A kind of causes tunnelling enhancement mode HMET device, and its structure comprises silicon substrate 3, forms GaN heterojunction, grid structure, source configuration and drain electrode structure by GaN layer 1 and MGaN layer 2 as shown in Figure 1, and wherein M is the III family element except Ga; Described drain electrode structure by the upper strata that is positioned at the GaN heterojunction, be AlGaN layer 2 surface, and form with the metal leakage utmost points 4 that MGaN layer 2 surface forms ohmic contact; Described grid structure is the groove insulated gate structure, comprises the groove of an etching in the GaN heterojunction, and the groove inwall has and GaN layer 1 and MGaN layer 2 contacted insulated gate medium 6, and inside grooves is filled metal and formed metal gate electrode 7; Described source configuration with source metal electrode 5 formation of MGaN layer 2 surface formation Schottky Barrier Contact, adopts insulated gate medium 6 isolated by near grid structure and away from drain electrode structure between source metal electrode 5 and the metal gate electrode 7.
In the technique scheme: 1, described III family element M except Ga adopts Al or In usually; 2, insulated gate medium 6 materials can be selected SiO
2, Si
3N
4, AlN, Al
2O
3, MgO or Sc
2O
33, the etching technics that adopts of the groove of etching in the GaN heterojunction is that dry etching or wet etching all can; 4, the insulated gate medium 6 of groove inwall can adopt ALD or pecvd process deposit.
The present invention proposes a kind of field and causes tunnelling enhanced AlGaN/GaN HMET device (as shown in Figure 1), different from conventional AlGaN/GaNHEMT device (as shown in Figure 2) is that source electrode in this structure (S) is the ohmic contact in Schottky Barrier Contact rather than the conventional structure; Grid (G) no longer is positioned between source electrode and the drain electrode (D) but forms insulated gate electrodes by etched recesses at the source electrode edge away from drain electrode.The operation principle of this device is: can be with distribution by near the AlGaN layer that applies at the notched gates electrode electromotive force (electric field) the regulation and control gate electrode, to reach the tunnelling conducting of electronics from source metal to the 2DEG raceway groove, the unlatching of realization device forward; During without applying electrical potential, source metal and semiconductor consist of Schottky Barrier Contact at the notched gates electrode, and device has blocking ability.Thus, by the conducting and cut-off control of grid to source electrode, reached unlatching and shutoff control to device, thereby realized enhanced AlGaN/GaN HMET device function.Simultaneously, depletion region is not at gate edge at the source electrode edge during owing to cut-off state, and it will can not produce high electric field at gate edge, is conducive to reduce the impact that high electric field lost efficacy on grid.
Field control conducting channel (as shown in Figure 1) to content of the present invention, the GaN heterojunction is take AlGaN/GaN as example, the AlGaN/GaN heterojunction boundary forms 2DEG, does not mate with the existence of the factor such as interfacial stress mainly due to the lattice of GaNg and AlGaN bi-material to form.This devices use the mode of piezoelectricity and spontaneous polarization realized the existence of the 2DEG conducting channel of device.Because the 2DEG that polarization produces is so that the AlGaN/GaN material system is the open type raceway groove.In order to realize normal pass type raceway groove required for the present invention, the present invention has made up the perpendicular grooves grid structure, the 2DEG concentration of heterojunction boundary can be with distribution relevant with it, and the variation that can be with can realize by changing electric field, therefore realize the variation that to be with by changing electric field, when grid adds forward voltage behind the band curvature electronics directly tunnelling cross potential barrier and accumulate in that (Fig. 3 (a) adds the front conduction band schematic diagram of grid voltage for device under the raceway groove of grid modulation, Fig. 3 (b) adds conduction band schematic diagram after the grid voltage for device), and then the 2DEG concentration of regulation and control heterojunction boundary, realize normal pass type conducting channel.Fig. 4 can be with the simulation result that changes under the different gate voltages, Fig. 5 is the simulation result of device transfer characteristic curve, and Fig. 6 is the simulation result of output characteristic curve.
In the present invention, can adopt following two schemes to prepare the insulated gate dielectric material.
(a) adopt atomic layer deposition (ALD) preparation Al
2O
3, HfO
2, TiO
2Deng dielectric material.The film that ALD grows can accurately control thickness and the chemical constituent of film, and the film of deposit has good uniformity and conformality from restriction.Should consider to adopt the way of composite laminate to realize, such as HfO
2/ Al
2O
3Deng.
(b) adopt MOCVD equipment to prepare Ga
2O
3, Al
2O
3, AlGaO or AlGaO/Al
2O
3Etc. various individual layers, mixed layer and various laminated construction, with preparation High Performance Insulation gate medium.Adopt that the MOCVD method has that dielectric material becomes that membrane stage is fine and close, THICKNESS CONTROL precisely, be easy to form the advantages such as hybrid films and multilayer film good reproducibility, particularly the inspectable space to interfacial state control is larger.
A kind of technological process that can realize that the field causes tunnelling enhanced AlGaN/GaN HEMT device is as shown in Figure 7: (a) preparation substrate, (b) etching spill grid groove, (c) drain electrode ohmic contact (d) is made the source metal electrode, (e) deposition insulating layer (f) is made the gate metal electrode.
Adopt device simulation software I SE-Dessis that structure that the present invention carries has been carried out preliminary simulation analysis.In this simulation analysis, the AlGaN barrier layer is 23nm, and the GaN layer is 1 μ m, and drain electrode is that length is the ohmic contact of 1 μ m, and source electrode is that length is the Schottky contacts (Ni/Au) of 0.2 μ m.In the groove of source side, by forming gate electrode at groove side deposit ~ 10nm thick SiN dielectric layer and schottky metal.Because the existence of polarity effect introduces 1 * 10 at the AlGaN/GaN heterojunction boundary
13Cm
-2Negative polarization charge, to characterize existing of 2DEG; In AlGaN and GaN, introduce respectively acceptor's moldeed depth trap of 1.8eV and 2.2eV to characterize volume defect.In the simulation model, do not consider that image force is on the impact of schottky barrier height.
When grid voltage is 0V, there is not electronics to assemble in the notched gates raceway groove, the depletion region that produces at the schottky source edge bears drain voltage, as back-biased SBD, as shown in Figure 9.Along with the increase of grid voltage, the AlGaN conduction band in the notched gates raceway groove is bent downwardly gradually, and this is accompanied by the attenuate of source electrode Schottky barrier, as shown in Figure 4.When Schottky barrier be thinned to less than electron tunneling apart from the time, electronics will be crossed potential barrier and accumulate under the raceway groove of grid modulation, the electron drift that source drain potential official post must be gathered in the raceway groove passes the AlGaN barrier layer, finally captured by the two dimensional quantum well at heterojunction place, thereby realized current lead-through.Figure 10 be grid voltage when being 4.5V near the grid equipotential lines distribute.
Fig. 5 is the transfer characteristic curve simulation result of device, reaches 2V by obtaining threshold voltage among the figure.Fig. 6 is the average anode current simulation result, and drain current is ~ 600mA/mm when grid voltage is 4.5V.By above-mentioned ISE simulation analysis, verified the feasibility of device working mechanism proposed by the invention.
Claims (5)
1. a field causes tunnelling enhancement mode HMET device, and its structure comprises silicon substrate (3), forms GaN heterojunction, grid structure, source configuration and drain electrode structure by GaN layer (1) and MGaN layer (2), and wherein M is the III family element except Ga; Described drain electrode structure by the upper strata that is positioned at the GaN heterojunction, be MGaN layer (2) surface, and form with the metal leakage utmost point (4) that MGaN layer (2) surface forms ohmic contact; Described grid structure is the groove insulated gate structure, comprises the groove of an etching in the GaN heterojunction, and the groove inwall has and GaN layer (1) and the contacted insulated gate medium of MGaN layer (2) (6), and inside grooves is filled metal and formed metal gate electrode (7); Described source configuration is by close grid structure and away from drain electrode structure, the source metal electrode (5) that forms Schottky Barrier Contact with MGaN layer (2) surface forms, and adopts insulated gate medium (6) isolated between source metal electrode (5) and the metal gate electrode (7).
2. according to claim 1 causes tunnelling enhancement mode HMET device, it is characterized in that, described III family element M except Ga is Al or In.
3. according to claim 1 causes tunnelling enhancement mode HMET device, it is characterized in that, described insulated gate medium (6) material is SiO
2, Si
3N
4, AlN, Al
2O
3, MgO or Sc
2O
3
4. according to claim 1 causes tunnelling enhancement mode HMET device, it is characterized in that, the etching technics that the groove of etching in the GaN heterojunction adopts is dry etching or wet etching.
5. according to claim 1 causes tunnelling enhancement mode HMET device, it is characterized in that, the insulated gate medium (6) of groove inwall adopts ALD or pecvd process deposit.
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| CN103745922A (en) * | 2013-12-09 | 2014-04-23 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing GaN high electron mobility transistor composite medium insulated gate |
| CN104538447A (en) * | 2014-12-25 | 2015-04-22 | 电子科技大学 | GaN-based tunneling FinFET device and manufacturing method thereof |
| CN105118830A (en) * | 2015-08-03 | 2015-12-02 | 电子科技大学 | Enhanced HEMT of integrated SBD |
| CN105118859A (en) * | 2015-07-29 | 2015-12-02 | 电子科技大学 | Tunneling enhancement type HEMT device |
| CN105304707A (en) * | 2015-10-28 | 2016-02-03 | 电子科技大学 | Enhanced HEMT device |
| CN105580140A (en) * | 2013-09-30 | 2016-05-11 | Hrl实验室有限责任公司 | Field effect transistor and method |
| CN107910370A (en) * | 2017-11-14 | 2018-04-13 | 电子科技大学 | A kind of gallium nitride heterojunction transverse direction rectifier |
| US10276712B2 (en) | 2014-05-29 | 2019-04-30 | Hrl Laboratories, Llc | III-nitride field-effect transistor with dual gates |
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| CN112490287A (en) * | 2020-11-05 | 2021-03-12 | 复旦大学 | Gallium nitride integrated field effect transistor with double working modes and preparation method thereof |
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| CN105580140A (en) * | 2013-09-30 | 2016-05-11 | Hrl实验室有限责任公司 | Field effect transistor and method |
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| US10692984B2 (en) | 2015-11-19 | 2020-06-23 | Hrl Laboratories, Llc | III-nitride field-effect transistor with dual gates |
| CN107910370A (en) * | 2017-11-14 | 2018-04-13 | 电子科技大学 | A kind of gallium nitride heterojunction transverse direction rectifier |
| CN111354777A (en) * | 2018-12-24 | 2020-06-30 | 东南大学 | Heterojunction semiconductor device with low on-resistance |
| CN112490287A (en) * | 2020-11-05 | 2021-03-12 | 复旦大学 | Gallium nitride integrated field effect transistor with double working modes and preparation method thereof |
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Application publication date: 20130116 |