CN102945859A - GaN heterojunction HEMT (High Electron Mobility Transistor) device - Google Patents
GaN heterojunction HEMT (High Electron Mobility Transistor) device Download PDFInfo
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Abstract
The invention discloses a GaN heterojunction HEMT (High Electron Mobility Transistor) device, belonging to the technical field of semiconductor devices. The GaN heterojunction HEMT device comprises a substrate and an InAIN/GaN heterojunction, wherein the InAIN/GaN heterojunction is positioned on the surface of the substrate; the surface of an InAIN layer is provided with a grid electrode, a source electrode and a drain electrode; and the drain electrode and the surface of the InAIN layer form ohmic contact, while the source electrode and the surface of the InAIN layer form Schottky contact. The GaN heterojunction HEMT device disclosed by the invention has the advantages that the Schottky contact is adopted at the source electrode, the electric field in GaN under the source electrode is uniformly distributed due to a good appearance characteristic, the electron injection of the source electrode is effectively restrained, and the current leakage of GaN and collision ionization and current leakage of the grid electrode caused by the current leakage are reduced, so that the off-state puncture voltage of the device is improved; the drain electrode adopts ohmic contact still, so that the positive on resistance of the device is reduced as low as possible, and better positive current driving capability of the device is ensured; in addition, the GaN heterojunction HEMT device is compatible to the traditional process, simultaneously the distance between the grid electrode and the source electrode can be very short, and the wafer occupying area is smaller, so that lower cost of the device is ensured.
Description
Technical field
The invention belongs to technical field of semiconductor device, relate to the GaN heterojunction and do electron mobility transistor (HEMT).
Background technology
Gallium nitride (GaN) is one of representative of third generation semiconductor material with wide forbidden band, has good characteristic: high critical breakdown electric field (~ 3.3 * 10
6V/cm), high electron mobility (~ 2000cm
2/ Vs), high two-dimensional electron gas (2DEG) concentration (~ 10
13Cm
-2), good hot operation ability.High Electron Mobility Transistor (HEMT) based on the GaN material is applied at semiconductor applications, especially has been applied to radio communication, satellite communication etc. in the RF/Microwave field.In addition, have the characteristics such as reverse blocking voltage is high, forward conduction resistance is low, operating frequency is high for such device of power electronics applications, can satisfy therefore that system is more high-power to semiconductor device, more low-loss, more high efficiency, higher frequency, the more requirement of small size and more abominable operational environment (such as high temperature).And have especially the channel charge density higher than the HEMT of traditional AlGaN/GaN heterojunction, larger drive current density, lower conducting resistance and better high temperature tolerance and become the splendid selection of following power electronic device based on the HEMT of the novel heterostructure of InAlN/GaN.In addition, because InAlN barrier layer and GaN resilient coating are Lattice Matchings.Therefore in the InAlN/GaN heterojunction, do not have stress, this with traditional AlGaN/GaN heterojunction in the stress that brings owing to lattice mismatch fully different.This unstressed characteristic is so that the HEMT of InAlN/GaN heterojunction has better device reliability, and being particularly suitable for operating state is the power electronics applications of large voltage, large electric current.
For the HEMT device of conventional InAlN/GaN heterojunction, its breakdown voltage is subject to the restriction of gate leakage current and resilient coating leakage current usually, and the breakdown voltage that how to improve device is extremely problems of concerns of researchers.Document J.Kuzmik, et.al., " Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors; " Physica Status Solidi C, vol.6, no.s2, pp.S925-S928,2009 have reported the technical scheme that improves the breakdown voltage of InAlN/GaN heterojunction HEMT by increasing the grid leak spacing.Document Q.Fareed, et.al., " High voltage operation of field-plated AlInN HEMTs; " Physica Status Solidi C, vol.8, no.7-8, pp.2454-2456, Mar.2011 have reported the technical scheme that adopts field plate structure to improve the breakdown voltage of InAlN/GaN heterojunction HEMT in conjunction with insulation AlN cap layer.Document B.Lu, et.al., " Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors; " IEEE Electron Device Letters, vol.31, no.4, pp.302-304, Apr.2010 have reported the raising of adopting the drain schottky contact to realize AlGaN/GaN heterojunction HEMT breakdown voltage.Document D.Song, et.al., " Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse; " IEEE Electron Device Letters, vol.28, no.3, pp.189-191, Mar.2007 has reported by the zone between grid leak and has introduced electronegative fluorine ion, change near the surface field of drain electrode, and then improve the breakdown voltage of AlGaN/GaN HEMTs device.
Obtained huge progress although improve in recent years the research work of InAlN/GaN heterojunction HEMT breakdown voltage, but the present puncture voltage of InAlN/GaN heterojunction HEMT still lower (peak of report is 400V at present) is well below the puncture voltage of the AlGaN/GaN heterojunction HEMT of bibliographical information.Although increase the breakdown voltage that the grid leak spacing can improve InAlN/GaN heterojunction HEMT, limited from result's increase rate of report.This scheme is that to sacrifice break-over of device resistance be cost, has also raised the needed wafer area of individual devices and has finally caused the rising of device cost, and do not met the theory of seeking break-over of device resistance and puncture voltage optimal value.On the other hand, field plate structure can effectively increase the breakdown voltage of device, but more complicated without the field plate device on the processing step, and the quality of the quality of field plate structure effect and dielectric layer material is closely bound up.Therefore, improving the device breakdown voltage by field plate structure is a comparatively complicated problem.
Summary of the invention
In order further to improve the breakdown voltage of InAlN/GaN heterojunction HEMT device, guarantee that simultaneously it has less conducting resistance and lower manufacturing cost (not increasing the required wafer area of device), the invention provides a kind of InAlN/GaN heterojunction HEMT device of new structure.InAlN/GaN heterojunction HEMT device provided by the invention does not advance to have the advantages such as high-breakdown-voltage, high drain drives electric current, low on-resistance, also with conventional power switching device process compatible.
Technical solution of the present invention is as follows:
A kind of GaN heterojunction HEMT device as shown in Figure 1, comprises substrate 3, is positioned at the GaN layer 1 on substrate 3 surfaces and is positioned at the InAlN layer 2 on GaN layer 1 surface; Wherein GaN layer 1 and InAlN layer 2 consist of the InAlN/GaN heterojunction, form two-dimensional electron gas (2DEG) conducting channel at InAlN/GaN heterojunction boundary place; Have gate electrode 6, source electrode 5 and drain electrode 4 on InAlN layer 2 surface, wherein source electrode 5 was in relative both sides, InAlN layer 2 surface in 4 minutes with drain electrode, and gate electrode 6 is between source electrode 5 and the drain electrode 4; Described drain electrode 4 forms ohmic contact with InAlN layer 2 surface, and described source electrode 5 forms Schottky contacts with InAlN layer 2 surface.
GaN heterojunction HEMT device provided by the invention, with conventional InAlN/GaN heterojunction HEMT device (as shown in Figure 2, be ohmic contact between source-drain electrode and InAlN layer 2 surface) different be, the ohmic contact in Schottky Barrier Contact rather than the conventional structure between source electrode 5 and InAlN layer 2 surface in this HEMT device, and drain 4 and InAlN layer 2 surface between still adopt ohmic contact.The operation principle of this HEMT device is: conventional H EMT device is because the essential high-temperature annealing process of source electrode ohmic contact, its comparatively out-of-flatness of metal surface pattern (shown in Fig. 3 (a)), because downward metal diffusion can occur in ohmic metal in high-temperature annealing process, it is inner and form the metal spike to cause ohmic metal to be diffused into semi-conducting material, and electric field produces local high electric field region near can being gathered in these metal spikes.Electronics is injected into the GaN resilient coating from source electrode under the effect of high electric field, the resilient coating leakage current increases, under electric field action these electronics that are injected in the GaN resilient coating, float to the strongest zone of whole device electric fields (gate edge by drain electrode one side) and there by high electric field acceleration bring out to upper state can be with in or the ionization by collision of energy interband, so that the increase of grid leakage current, and finally cause device breakdown.And GaN heterojunction HEMT device provided by the invention is (because its source electrode adopts Schottky contacts, so be defined as schottky source GaN heterojunction HEMT device) because source electrode has adopted Schottky contacts, need not high-temperature annealing process, horizontal and vertical splendid metal pattern (shown in Fig. 3 (b)) arranged.Therefore the Electric Field Distribution in the GaN resilient coating is comparatively even below schottky source, has avoided the generation of local high electric field region, establishment electronics be injected in the GaN resilient coating, so the breakdown voltage of device is largely increased.On the other hand, because drain electrode adopts ohmic contact to guarantee that device has less conducting resistance.
To the field control conducting channel (as shown in Figure 1) of content of the present invention, with In
xAl
1-xN is example, and wherein the x value is about 0.17 (this moment, the first III-V group-III nitride and the second III-V group-III nitride can reach Lattice Matching).The heterojunction boundary that the first III-V group-III nitride and the second III-V group-III nitride consists of forms 2DEG, does not overlap and forms mainly due to positive and negative charge center in the unit cell.This devices use the extremely strong spontaneous polarization of InAlN/GaN heterojunction realized the existence of the 2DEG conducting channel of device.Because the 2DEG of InAlN/GaN heterojunction middle and high concentration and thinner InAlN barrier layer, be lowered so that fetter effective potential barrier of 2DEG, and owing to used the metal of low work function so that this Schottky contacts has the withstand voltage and higher reverse-conduction current of direction that contacts far below traditional schottky at the InAlN/GaN heterojunction at schottky source.Therefore the schottky source InAlN/GaN heterojunction HEMT device of the present invention's proposition has larger On current and less conducting resistance under opening.Fig. 4 is the DC characteristic of schottky source InAlN/GaN HEMTs: wherein Fig. 4 (a) is output characteristic curve, and Fig. 4 (b) is transfer characteristic curve.
Beneficial effect of the present invention shows:
1, common device is because ohmic contact is leaked in the employing source, cause breakdown voltage less, and adopted source electrode Schottky contacts and drain electrode ohmic contact among the present invention, so that the device breakdown voltage significantly significantly improves, guaranteed that simultaneously device has less conducting resistance.
2, because this structure has adopted the material with appropriate work function number, and the conducting resistance of device is less, and drain current is larger, forward characteristic is optimized.
3, schottky source InAlN/GaN heterojunction HEMT provided by the invention can be compatible with traditional handicraft, and the distance between grid and the source electrode can be very little simultaneously, and it is less to take wafer area, thereby guarantee that device cost is lower.
Description of drawings
Fig. 1 is schottky source InAlN/GaN heterojunction HEMT device architecture schematic diagram provided by the invention.
The conventional InAlN/GaN heterojunction of Fig. 2 HEMT device architecture schematic diagram.
Vertical view under Fig. 3 scanning electron microscopy: (a) the Ti/Al/Ni/Au ohmic contact behind the conventional high annealing; (b) Ti/Au Schottky contacts.
The DC characteristic of Fig. 4 schottky source InAlN/GaN provided by the invention heterojunction HEMT: (a) output characteristic curve; (b) transfer characteristic curve that when VDS=10V, records.The device size L of schottky source InAlN/GaN heterojunction HEMT wherein
G/ L
GS/ L
GD/ W
G=2.5/0.25/15/10 μ m, the device size L of conventional I nAlN/GaN heterojunction HEMT
G/ L
GS/ L
GD/ W
G=2.5/0.75/15/10 μ m.
The derived structure schematic diagram of Fig. 5 schottky source InAlN/GaN provided by the invention heterojunction HEMT device.
Fig. 6 is L
GDThe schottky source InAlN/GaN heterojunction HEMT device of=15 μ m is grid, drain electrode and source leakage currents (I in the breakdown voltage test
G, I
DAnd I
S) and drain bias V
DSRelation.Grid bias V
GS=-3.5V, raceway groove is in off state.
Fig. 7 is schottky source InAlN/GaN heterojunction HEMT device breakdown voltage and grid leak spacing L
GDRelation.Grid bias VGS=-3.5V, raceway groove is in off state.Illustration is puncture voltage and L in schottky source InAlN/GaN heterojunction HEMT device and the conventional I nAlN/GaN heterojunction HEMT device
GDRelation.
The conduction resistance Rsp of Fig. 8 conventional I nAlN/GaN heterojunction HEMT device and schottky source InAlN/GaN heterojunction HEMT device, the relation of on and puncture voltage
Embodiment
Schottky source extra-high voltage InAlN/GaN HEMTs device provided by the invention (as shown in Figure 1) comprises substrate 3, is positioned at the GaN layer 1 on substrate 3 surfaces and is positioned at the InAlN layer 2 on GaN layer 1 surface; Wherein GaN layer 1 and InAlN layer 2 consist of the InAlN/GaN heterojunction, form two-dimensional electron gas (2DEG) conducting channel at InAlN/GaN heterojunction boundary place; Have gate electrode 6, source electrode 5 and drain electrode 4 on InAlN layer 2 surface, wherein source electrode 5 was in relative both sides, InAlN layer 2 surface in 4 minutes with drain electrode, and gate electrode 6 is between source electrode 5 and the drain electrode 4; Described drain electrode 4 forms ohmic contact with InAlN layer 2 surface, and described source electrode 5 forms Schottky contacts with InAlN layer 2 surface.
GaN heterojunction HEMT device provided by the invention, with conventional InAlN/GaN heterojunction HEMT device (as shown in Figure 2, be ohmic contact between source-drain electrode and InAlN layer 2 surface) different be, the ohmic contact in Schottky Barrier Contact rather than the conventional structure between source electrode 5 and InAlN layer 2 surface in this HEMT device, and drain 4 and InAlN layer 2 surface between still adopt ohmic contact.The operation principle of this HEMT device is: conventional H EMT device is because the essential high-temperature annealing process of source electrode ohmic contact, its comparatively out-of-flatness of metal surface pattern (shown in Fig. 3 (a)), because downward metal diffusion can occur in ohmic metal in high-temperature annealing process, it is inner and form the metal spike to cause ohmic metal to be diffused into semi-conducting material, and electric field produces local high electric field region near can being gathered in these metal spikes.Electronics is injected into the GaN resilient coating from source electrode under the effect of high electric field, the resilient coating leakage current increases, under electric field action these electronics that are injected in the GaN resilient coating, float to the strongest zone of whole device electric fields (gate edge by drain electrode one side) and there by high electric field acceleration bring out to upper state can be with in or the ionization by collision of energy interband, so that the increase of grid leakage current, and finally cause device breakdown.And GaN heterojunction HEMT device provided by the invention is (because its source electrode adopts Schottky contacts, so be defined as schottky source GaN heterojunction HEMT device) because source electrode has adopted Schottky contacts, need not high-temperature annealing process, horizontal and vertical splendid metal pattern (shown in Fig. 3 (b)) arranged.Therefore the Electric Field Distribution in the GaN resilient coating is comparatively even below schottky source, has avoided the generation of local high electric field region, establishment electronics be injected in the GaN resilient coating, so the breakdown voltage of device is largely increased.On the other hand, because drain electrode adopts ohmic contact to guarantee that device has less conducting resistance.
To the field control conducting channel (as shown in Figure 1) of content of the present invention, with In
xAl
1-xN is example, and wherein the x value is about 0.17 (this moment, the first III-V group-III nitride and the second III-V group-III nitride can reach Lattice Matching).The heterojunction boundary that the first III-V group-III nitride and the second III-V group-III nitride consists of forms 2DEG, does not overlap and forms mainly due to positive and negative charge center in the unit cell.This devices use the extremely strong spontaneous polarization of InAlN/GaN heterojunction realized the existence of the 2DEG conducting channel of device.Because the 2DEG of InAlN/GaN heterojunction middle and high concentration and thinner InAlN barrier layer, be lowered so that fetter effective potential barrier of 2DEG, and owing to used the metal of low work function so that this Schottky contacts has the withstand voltage and higher reverse-conduction current of direction that contacts far below traditional schottky at the InAlN/GaN heterojunction at schottky source.Therefore the schottky source InAlN/GaN heterojunction HEMT device of the present invention's proposition has larger On current and less conducting resistance under opening.Fig. 4 is the DC characteristic of schottky source InAlN/GaN HEMTs: wherein Fig. 4 (a) is output characteristic curve, and Fig. 4 (b) is transfer characteristic curve.
Schottky source GaN heterojunction HEMT device provided by the invention also can have derived structure as shown in Figure 5: increase one deck insulation barrier material 7 between gate electrode 6 and InAlN layer 2, insulation barrier material 7 can adopt Al
2O
3Or other single or multiple lift dielectric materials also can be used as the passivation layer of device simultaneously as insulation barrier.This derived structure can further improve the breakdown voltage of device because the existence of insulation barrier material 7 has reduced gate leakage current.
Schottky source GaN heterojunction HEMT device provided by the invention, its source electrode metal can adopt the metal material with different work functions, but can make device that preferably forward characteristic and lower conducting resistance are arranged than the source metal of low work function.The metal of higher work-functions can make device have higher breakdown voltage.In addition, schottky source GaN heterojunction HEMT device provided by the invention, distance between its grid and the source electrode can be very little, and this is inaccessible in conventional device, because ohmic contact in the conventional device may cause the short circuit of grid source electrode because high annealing can cause the transverse metal diffusion if grid and source electrode spacing are too small.Less grid source electrode spacing is conducive to reduce the resistance between the grid source electrode, and then so that the whole conducting resistance of device is less, has reduced conduction loss device for power switching preferably.
Schottky source GaN heterojunction HEMT device provided by the invention, its drain electrode material can adopt schottky metal, and backing material can be sapphire, also can be carborundum or silicon.
Schottky source InAlN/GaN heterojunction HEMT device provided by the invention can adopt MOCVD equipment to prepare backing material.Adopt that the MOCVD method has that dielectric material becomes that membrane stage is fine and close, THICKNESS CONTROL precisely, be easy to form the advantages such as hybrid films and multilayer film good reproducibility, particularly the inspectable space to interfacial state control is larger.The device manufacturing starts from mesa-isolated, uses plasma etching.By forming the drain electrode ohmic contact behind depositing metal and the high annealing.Adopt electron beam evaporation method deposit source source/drain Schottky electrode.Adopt atomic layer deposition (ALD) preparation Al
2O
3, SiO
2, HfO
2Deng gate dielectric material.The film that ALD grows can accurately control thickness and the chemical constituent of film, and the film of deposit has good uniformity and conformality from restriction.Also can adopt PECVD equipment to prepare SiN
x, SiO
2Deng gate dielectric material.Adopt photoetching, electron beam evaporation and stripping means to make gate electrode.
The ohmic contact material all adopts Ti/Al/Ni/Au, and ohmic contact resistance is 0.6 Ω mm, and the schottky source contact material adopts Ti/Au, and the gate metal material adopts Ni/Au.Setting is with drain leakage current I
D, leakageDrain terminal voltage when reaching 1mA/mm is puncture voltage BV.Fig. 4 has shown the DC characteristic of Schottky source extra-high voltage InAlN/GaN heterojunction HEMT device, and as seen from the figure, Schottky source extra-high voltage InAlN/GaN heterojunction HEMT device has high current drive capability, high transconductance G
M, peakBe 158mS/mm, maximum drain current density I
D, maxBe 302mA/mm.Conducting resistance R
OnBe 17 Ω mm.Fig. 6 has shown L
GDThe schottky source InAlN/GaN heterojunction HEMT device of=15 μ m is grid, drain electrode and source leakage (I in the breakdown voltage test
G, I
DAnd I
S) and drain bias V
DSRelation, the puncture voltage BV of device has improved 253% up to 650V than conventional device.As shown in Figure 6, causing the main cause of schottky source InAlN/GaN heterojunction HEMT device breakdown is gate leakage current.Fig. 7 has shown schottky source InAlN/GaN heterojunction HEMT device breakdown voltage and grid leak spacing L
GDRelation, the conventional device puncture voltage reaches capacity about 180V, and Schottky source extra-high voltage InAlN/GaN heterojunction HEMT device electric breakdown strength is with L
GDGrowth is linear growth, at L
GDReach maximum 650V during=15 μ m.Fig. 8 is the conduction resistance R of three kinds of devices
Sp, onWith the relation of breakdown voltage, visible Schottky source extra-high voltage InAlN/GaN heterojunction HEMT device has kept less conduction resistance when improving puncture voltage, R when puncture voltage is maximum
Sp, onBe 3.4m Ω cm
2
Claims (5)
1. a GaN heterojunction HEMT device comprises substrate (3), is positioned at the GaN layer (1) on substrate (3) surface and is positioned at the surperficial InAlN layer (2) of GaN layer (1); Wherein GaN layer (1) and InAlN layer (2) consist of the InAlN/GaN heterojunction, form the two-dimensional electron gas conducting channel at InAlN/GaN heterojunction boundary place; Have gate electrode (6), source electrode (5) and drain electrode (4) on InAlN layer (2) surface, wherein source electrode (5) and drain electrode (4) minute are in relative both sides, InAlN layer (2) surface, and gate electrode (6) is between source electrode (5) and the drain electrode (4); Described drain electrode (4) forms ohmic contact with InAlN layer (2) surface, and described source electrode (5) forms Schottky contacts with InAlN layer (2) surface.
2. GaN heterojunction HEMT device according to claim 1 is characterized in that, also has one deck insulation barrier material (7) between described gate electrode (6) and the InAlN layer (2), and described insulation barrier material (7) adopts Al
2O
3Or other single or multiple lift dielectric materials as insulation barrier simultaneously also as the passivation layer of device.
3. GaN heterojunction HEMT device according to claim 1 and 2 is characterized in that, described source electrode (5) material can adopt the metal material with different work functions.
4. GaN heterojunction HEMT device according to claim 1 and 2 is characterized in that, described drain electrode (4) material can adopt schottky metal.
5. GaN heterojunction HEMT device according to claim 1 and 2 is characterized in that, described substrate (3) material is sapphire, carborundum or silicon.
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