CN102856373B - High-electronic-mobility-rate transistor - Google Patents
High-electronic-mobility-rate transistor Download PDFInfo
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- CN102856373B CN102856373B CN201210372508.5A CN201210372508A CN102856373B CN 102856373 B CN102856373 B CN 102856373B CN 201210372508 A CN201210372508 A CN 201210372508A CN 102856373 B CN102856373 B CN 102856373B
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Abstract
The invention relates to the microelectronic technology and discloses a high-electronic-mobility-rate transistor which can solve the problem that the existing high-electronic-mobility-rate transistor is large in gate leakage current. The technical scheme is that the high-electronic-mobility-rate transistor comprises grid metal, source metal, drain metal, a base, a buffer layer, a channel layer and a barrier layer and is characterized in that an inserting layer grows on the base in extending mode, the buffer layer grows on the inserting layer in extending mode, the channel layer grows on the buffer layer in extending mode, the barrier layer grows on the channel layer in extending mode, a cap layer grows on the barrier layer in extending mode, the grid metal, the source metal and the drain metal respectively grow on the cap layer, passivation layers are arranged between the grid metal and the source metal and between the grid metal and the drain metal, and the passivation layers are contacted with the cap layer. The high-electronic-mobility-rate transistor has the advantages of improving performance of devices.
Description
Technical field
The present invention relates to microelectric technique, particularly High Electron Mobility Transistor.
Background technology
Gallium nitride and the first generation are compared with second generation semi-conducting material has more excellent electric property, it is a kind of wide bandgap semiconductor materials, there are high breakdown field strength, high saturated velocity and high thermal stability etc., due to the premium properties of gallium nitride material, make its very big concern obtaining people and research, wherein studying is AlGaN/GaN High Electron Mobility Transistor (HEMT) the most widely, and this device has application at high frequency, high power, high temperature etc.
AlGaN/GaN High Electron Mobility Transistor is a kind of HFET, and it is that utilization has the two-dimensional electron gas (2-DEG) of very high mobility and works.2-DEG is present in the heterojunction surface that AlGaN potential barrier and GaN channel layer contact, and its mobility is very high and also do not freeze at very low temperature, has good temperature characterisitic.HEMT is a kind of voltage-controlled device, and grid voltage Vg can the degree of depth of control AlGaN and GaN heterojunction potential well, and then controls the surface density of 2-DEG in potential well, thus the operating current of control device.2-DEG is due to polarization generation, and nitride has very strong polarity effect.Polarity effect comprises piezoelectric polarization and spontaneous polarization, piezoelectric polarization effect in AlGaN/GaN heterojunction is 5 times of AlGaAs/GaAs heterojunction, in wurtzite structure III group-III nitride, spontaneous polarization is also larger, studies widely so AlGaN/GaNHEMT obtains.As shown in Figure 1, its gate leak current is larger for current high electron mobility transistor structure schematic diagram.AlGaN/GaN HEMT device is the focus of current research.
Summary of the invention
The object of the invention is to overcome the larger shortcoming of current High Electron Mobility Transistor gate leak current, a kind of High Electron Mobility Transistor is provided.
The present invention solves its technical problem, the technical scheme adopted is, High Electron Mobility Transistor, comprise gate metal, source metal, drain metal, substrate, resilient coating, channel layer and barrier layer, it is characterized in that, described substrate Epitaxial growth has insert layer, insert layer Epitaxial growth has resilient coating, resilient coating Epitaxial growth has channel layer, channel layer Epitaxial growth has barrier layer, barrier layer Epitaxial growth has cap, gate metal, source metal and drain metal lay respectively in cap, between gate metal and source metal and between gate metal and drain metal, there is passivation layer, passivation layer contacts with cap.
Concrete, described substrate is carbofrax material, and described insert layer is aluminium nitride material, its thickness is 3nm, and described resilient coating is the gallium nitride material of doping, and its thickness is 3 μm, described channel layer is gallium nitride material, its thickness is 80nm, and described barrier layer is AlGaN material, and its thickness is 30nm, Al(and aluminium) component be 0.3, described cap is gallium nitride material, and thickness is 5nm, and doping content is 1 × 10
18cm
-3to 5 × 10
18cm
-3between, described passivation layer is silicon nitride material, and thickness is 0.12 μm.
Further, described gate metal is gold, and form Schottky contacts with gallium nitride cap, source metal and drain metal are nickel, form ohmic contact with gallium nitride cap.
The invention has the beneficial effects as follows, above-mentioned High Electron Mobility Transistor, by changing the epitaxial structure of device and the optimization of each Rotating fields relevant parameter, make device operationally mutual conductance very large and in the certain limit of grid voltage work the change of mutual conductance very little, namely device has good voltage-controlled ability and the higher linearity.
Accompanying drawing explanation
Fig. 1 is high electron mobility transistor structure schematic diagram in prior art;
Fig. 2 is the high electron mobility transistor structure schematic diagram of the embodiment of the present invention;
Fig. 3 is the mutual conductance change schematic diagram of the High Electron Mobility Transistor of embodiment of the present invention cap under different levels of doping.
Embodiment
Below in conjunction with drawings and Examples, describe technical scheme of the present invention in detail.
High Electron Mobility Transistor of the present invention, comprise gate metal, source metal, drain metal and substrate, substrate Epitaxial growth has insert layer, insert layer Epitaxial growth has resilient coating, resilient coating Epitaxial growth has channel layer, channel layer Epitaxial growth has barrier layer, barrier layer Epitaxial growth has cap, gate metal, source metal and drain metal lay respectively in cap, have passivation layer between gate metal and source metal and between gate metal and drain metal, passivation layer contacts with cap.
Embodiment
The substrate of this example is carbofrax material, and described insert layer is aluminium nitride material, and its thickness is 3nm, resilient coating is the gallium nitride material of doping, its thickness is 3 μm, and channel layer is gallium nitride material, and its thickness is 80nm, barrier layer is AlGaN material, its thickness is 30nm, Al(and aluminium) component be 0.3, cap is gallium nitride material, thickness is 5nm, and doping content is 1 × 10
18cm
-3to 5 × 10
18cm
-3between change, it is larger that result is presented at the larger mutual conductance of cap concentration in certain limit, but work as cap concentration more than 1 × 10
20cm
-3time mutual conductance reduce on the contrary, in the present embodiment, the mutual conductance change schematic diagram of the High Electron Mobility Transistor of cap under different levels of doping as shown in Figure 3, the concentration of GaN cap has larger impact to mutual conductance, passivation layer is silicon nitride material, thickness is 0.12 μm, and the high electron mobility transistor structure schematic diagram of the present embodiment is as Fig. 2.
The aln inserting layer of the substrate Epitaxial growth 3nm thickness first made at carbofrax material, again at the resilient coating of aln inserting layer insert layer Epitaxial growth 3 μm of thickness, resilient coating is the gallium nitride material of doping, the gallium nitride channel layer of epitaxial growth 80nm thickness again on resilient coating, the AlGaN potential barrier of gallium nitride channel layer Epitaxial growth 30nm thickness, in AlGaN potential barrier, Al(and aluminium) component be 0.3, the gallium nitride cap of AlGaN potential barrier Epitaxial growth 5nm thickness, gate metal, source metal and drain metal lay respectively in gallium nitride cap, there is between gate metal and source metal and between gate metal and drain metal the silicon nitride passivation of 0.12 μm of thickness, silicon nitride passivation contacts with gallium nitride cap, gate metal is gold, Schottky contacts is formed with gallium nitride cap, source metal and drain metal are nickel, ohmic contact is formed with gallium nitride cap.
The GaN cap that doping content is higher adds the concentration of 2-DEG, and then makes AlGaN/GaN HEMT device show more excellent performance, and Si
3n
4passivation layer protects HEMT device surface not to be affected by introduced contaminants, also plays the effect of fixed surface ion simultaneously, and then improves the performance of device.And GaN cap can reduce gate leak current and improve the breakdown characteristics of device, so electrical property of the present invention has more advantage.And due to HEMT be voltage control device, grid voltage can control the degree of depth of heterojunction potential well, also can control the surface density of 2-DEG in potential well, thus the operating current of control device; And the size of mutual conductance reflects the control action of gate source voltage to grid current, so the voltage-controlled ability that mutual conductance indicates greatly device is strong.
Claims (2)
1. High Electron Mobility Transistor, comprise gate metal, source metal, drain metal, substrate, resilient coating, channel layer and barrier layer, it is characterized in that, described substrate Epitaxial growth has insert layer, insert layer Epitaxial growth has resilient coating, resilient coating Epitaxial growth has channel layer, channel layer Epitaxial growth has barrier layer, barrier layer Epitaxial growth has cap, gate metal, source metal and drain metal lay respectively in cap, between gate metal and source metal and between gate metal and drain metal, there is passivation layer, passivation layer contacts with cap,
Described substrate is carbofrax material, and described insert layer is aluminium nitride material, and its thickness is 3nm, described resilient coating is the gallium nitride material of doping, its thickness is 3 μm, and described channel layer is gallium nitride material, and its thickness is 80nm, described barrier layer is AlGaN material, its thickness is the component of 30nm, Al (i.e. aluminium) is 0.3, and described cap is gallium nitride material, thickness is 5nm, and doping content is 1 × 10
18cm
-3to 5 × 10
18cm
-3between, described passivation layer is silicon nitride material, and thickness is 0.12 μm.
2. High Electron Mobility Transistor according to claim 1, is characterized in that, described gate metal is gold, and form Schottky contacts with gallium nitride cap, source metal and drain metal are nickel, form ohmic contact with gallium nitride cap.
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| CN102856373B true CN102856373B (en) | 2015-04-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103594508A (en) * | 2013-11-26 | 2014-02-19 | 电子科技大学 | Gallium nitride high electron mobility transistor of grid single field plate |
| CN104362181B (en) * | 2014-11-03 | 2017-07-04 | 苏州捷芯威半导体有限公司 | A kind of GaN heterojunction diodes device and preparation method thereof |
| CN105352636B (en) * | 2015-11-11 | 2018-08-14 | 成都海威华芯科技有限公司 | GaN pressure sensors and preparation method thereof |
| CN105679823B (en) * | 2016-02-17 | 2019-09-03 | 香港商莫斯飞特半导体有限公司 | A kind of longitudinal type gallium nitride radical heterojunction semiconductor devices and its manufacturing method |
| CN107731889A (en) * | 2016-08-12 | 2018-02-23 | 比亚迪股份有限公司 | High electron mobility semiconductor device and preparation method thereof |
| CN106783945A (en) * | 2016-11-30 | 2017-05-31 | 中国科学院微电子研究所 | A kind of material structure of the enhanced electronic device of GaN base |
| WO2018188649A1 (en) * | 2017-04-14 | 2018-10-18 | 苏州能讯高能半导体有限公司 | Semiconductor device and manufacturing method therefor |
| CN113690236B (en) * | 2021-06-30 | 2023-06-09 | 华灿光电（浙江）有限公司 | High electron mobility transistor chip and preparation method thereof |
Citations (4)
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| EP0602671A2 (en) * | 1992-12-17 | 1994-06-22 | Nec Corporation | Heterojunction field effect transistor having an improved transistor characteristic |
| CN1554121A (en) * | 2001-07-12 | 2004-12-08 | 克里公司 | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same |
| CN101095233A (en) * | 2004-12-30 | 2007-12-26 | 皇家飞利浦电子股份有限公司 | Enhancement - depletion semiconductor structure and method for making it |
| CN102569390A (en) * | 2010-12-24 | 2012-07-11 | 中国科学院微电子研究所 | High-breakdown gallium nitride-based field effect transistor device and manufacturing method thereof |
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| JPS62165317A (en) * | 1986-01-17 | 1987-07-21 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0602671A2 (en) * | 1992-12-17 | 1994-06-22 | Nec Corporation | Heterojunction field effect transistor having an improved transistor characteristic |
| CN1554121A (en) * | 2001-07-12 | 2004-12-08 | 克里公司 | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same |
| CN101095233A (en) * | 2004-12-30 | 2007-12-26 | 皇家飞利浦电子股份有限公司 | Enhancement - depletion semiconductor structure and method for making it |
| CN102569390A (en) * | 2010-12-24 | 2012-07-11 | 中国科学院微电子研究所 | High-breakdown gallium nitride-based field effect transistor device and manufacturing method thereof |
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