CN102664188B - Gallium nitride-based high-electron-mobility transistor with composite buffering layer - Google Patents
Gallium nitride-based high-electron-mobility transistor with composite buffering layer Download PDFInfo
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Abstract
The invention discloses a gallium nitride-based high-electron-mobility transistor with a composite buffering layer, which belongs to the field of semiconductor devices. The transistor comprises a substrate (108), an aluminum nitride nucleating layer (107), a gallium nitride channel layer (201), an aluminum oxide insertion layer (105), an aluminum-gallium-nitrogen barrier layer (104), and sources (101), drains (102) and grids (103) formed on the barrier layer, wherein the sources (101) and the drains (102) are in ohmic contact with the aluminum-gallium-nitrogen barrier layer (104); and the grid (103) are in Schottky contact with the aluminum-gallium-nitrogen barrier layer (104). The transistor is characterized by further comprising an aluminum-indium-nitrogen/gallium nitride composite buffering layer (202) or an aluminum nitride/aluminum-indium-nitrogen/gallium nitride composite buffering layer (401) positioned between the gallium nitride channel layer (201) and the aluminum nitride nucleating layer (107) for suppressing transport of electrons in the buffering layer, reducing leakage current of a device buffering layer and increasing the breakdown voltage and output power of the device.
Description
Technical field
A GaN base transistor with high electronic transfer rate with compound buffer layer, belongs to field of semiconductor devices, can effectively reduce the leakage current of device and improve device electric breakdown strength.
Technical background
The excellent specific properties such as GaN base transistor with high electronic transfer rate (GaN HEMT) not only has that gallium nitride material energy gap is large, critical breakdown electric field is high, electronics saturation drift velocity is high, high temperature resistant, radioresistance and good chemical stability, simultaneously gallium nitride material can form the Two-dimensional electron gas channel with high concentration and high mobility with the material such as aluminum gallium nitride (AlGaN), therefore being specially adapted to high pressure, the application of high-power and high temperature, is one of power electronics transistor of applying tool potentiality.
Fig. 1 is prior art GaN HEMT section of structure, mainly comprise substrate (108), aluminium nitride (AlN) nucleating layer (107), gallium nitride (GaN) resilient coating (106), aluminium nitride (AlN) insert layer (105), the source electrode (101), drain electrode (102) and the grid (103) that on aluminum gallium nitride (AlGaN) barrier layer (104) and barrier layer, form, wherein source electrode (101) and drain electrode (102) form ohmic contact with AlGaN barrier layer (104), and grid (103) forms Schottky contacts with AlGaN barrier layer (104).But for common GaN HEMT, when device bears when withstand voltage, can arrive drain electrode (102) through GaN resilient coating (106) from source electrode (101) injected electrons, form leak channel, excessive resilient coating leakage current can cause device to puncture in advance, make the puncture voltage of device far below theory expectation, limited the fan-out capability of GaN HEMT.
Before the present invention proposes, for reducing device resilient coating leakage current, improve device electric breakdown strength, conventionally realize high-impedance state layer buffer design with following methods:
1, in GaN resilient coating (106), mix the impurity such as carbon, iron [Eldad Bahat-Treidel et al., " AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over1kV and Low R
oN× A ", Transactions on Electron Devices, VOL.57, No.11,3050-3058 (2010)].The impurity such as carbon, iron can be introduced deep energy level electron trap in gallium nitride material, capture from source electrode and be injected into the electronics in resilient coating, thereby reduce the leakage current of resilient coating, but this technology promotes limited to device electric breakdown strength, cannot give full play to the withstand voltage advantage of gallium nitride material, the Deep Level Traps that the impurity such as this while carbon, iron are introduced can cause equally such as degradation shortcoming under device output current decline, current collapse effect and reaction speed.
2, use back of the body potential barrier buffer layer structure [the Oliver Gilt et al. such as AlGaN, " Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer ", Integrated Power Electronics Systems, 2010].The use of the back of the body potential barriers such as AlGaN has increased the barrier height from raceway groove two-dimensional electron gas to resilient coating, thereby reduce device resilient coating leakage current, but this technology promotes limited to device electric breakdown strength equally, fail to fully demonstrate the withstand voltage advantage of gallium nitride material, simultaneously AlGaN back of the body potential barrier not only between resilient coating and raceway groove because lattice mismatch is introduced trap, and in resilient coating in AlGaN and barrier layer AlGaN there is contrary polarity effect, can reduce raceway groove two-dimensional electron gas, increase device conducting resistance.
3, use compound buffer layer structure [the Manabu Yanagihara et al. such as AlGaN/GaN or AlN/GaN, " Recent advances in GaN transistors for future emerging application ", Phys.Status Solidi A, Vol.206, No.6,1221-1227 (2009)].AlGaN/GaN or AlN/GaN composite construction are introduced Superlattice band structure in resilient coating, compare undoped buffer layer and aluminum gallium nitride back of the body barrier structure, this structure can further suppress electronics transporting in resilient coating, boost device puncture voltage, but due to AlGaN and AlN material and the same crystal structure that can destroy resilient coating of lattice mismatch of GaN material, introduce trap and polarization charge, reduce device performance.
4, in [Wang Xiaoliang etc., wideband gap gallium nitride radical heterojunction field effect transistor structure and manufacture method, CN100555660C], announced a kind of use aluminium (indium) gallium nitrogen (Al
xin
yga
zn) the gallium nitride-based field effect transistor structure of super-lattice buffer layer.This structure can reduce the lattice defect of material and improve raceway groove two-dimensional electron gas mobility.But described gallium nitride radical heterojunction field effect transistor has used the Al that lattice constant is different
xin
yga
zn super-lattice buffer layer can be introduced new mismatch stress in resilient coating, introduces trap and polarization charge.It also comprises that one deck is positioned at the non-doping intentionally between aluminium (indium) gallium nitrogen superlattice layer and high mobility gallium nitride layer or has a mind to doped gallium nitride resistive formation simultaneously, although this resistive formation can reduce the leakage of electronics to resilient coating, but the lifting to device electric breakdown strength is limited, can not give full play to the advantage of gallium nitride material, the Deep Level Traps in this resistive formation can cause device output current decline, current collapse effect and reaction speed to decline simultaneously.
Summary of the invention
The object of the invention is in order to suppress electronics transporting in resilient coating, reduce device leakage current, thereby make device there is higher puncture voltage, the present invention proposes a kind of GaN HEMT that uses aluminium indium nitrogen/gallium nitride (AlInN/GaN) compound buffer layer pressure-resistance structure.Compared with above method, main advantage of the present invention has: (1) introduces Superlattice band structure in resilient coating, and block electrons, to resilient coating internal penetration, reduces resilient coating leakage current; (2) by accurately controlling In molar constituent in AlInN, the perfect matching of AlInN material and GaN material lattice be can accomplish, defect and trap due to introduced stress avoided; (3) do not use the non-GaN high resistant resilient coating of having a mind to doping or having a mind to doping, in reducing resilient coating Leakage Current, avoided the impact of Deep Level Traps on device performance in GaN high resistant resilient coating.
Gallium nitride based transistor structure with high electron mobility provided by the invention as shown in Figure 2, mainly comprise substrate (108), AlN nucleating layer (107), GaN channel layer (201), AlN insert layer (105), the source electrode (101) forming on AlGaN barrier layer (104) and barrier layer, drain electrode (102) and grid (103), wherein source electrode (101) and drain electrode (102) form ohmic contact with barrier layer (104), grid (103) forms Schottky contacts with barrier layer (104), it is characterized in that, it also comprises that one deck is positioned at the AlInN/GaN compound buffer layer (202) between GaN channel layer (201) and AlN nucleating layer (107).This compound buffer layer is pressed GaN/AlInN on AlN nucleating layer (107) ... GaN/AlInN repeated arrangement is until the required thickness of compound buffer layer, and this buffer layer thickness is 1 μ m～8 μ m.Wherein AlInN thickness in monolayer is 1nm～10nm, and GaN thickness in monolayer is 10nm～50nm.In AlInN/GaN compound buffer layer (202), in AlInN layer, In molar constituent is 17%～18%, to guarantee that AlInN material is identical with GaN material lattice constant.
According to GaN base transistor with high electronic transfer rate provided by the invention, described substrate can be sapphire (Al
2o
3), carborundum (SiC) or silicon (Si); The thickness of described AlN nucleating layer (107) be 10nm to 3 μ m, described GaN channel layer (201) thickness is that 5nm is to 2 μ m; Described AlN insert layer (105) thickness is that 1nm is to 5nm; Described AlGaN barrier layer (104) thickness is that 10nm is to 50nm.
According to GaN HEMT provided by the invention, the band structure of described AlInN/GaN compound buffer layer (202) as shown in Figure 3, now the Electronic Transport Processes in resilient coating can be divided into transportation (in the x-direction) and vertical transport (in the y-direction), compared with prior art GaN resilient coating (106) or AlGaN back of the body potential barrier, electronics is restricted transporting of y direction, its main hauler is shaped with two kinds: first, thermal excitation conduction, be that electronics obtains enough energy jumps and crosses AlInN potential barrier (in figure, process a), but in the motion process along y direction, can interact and again fall back in gallium nitride potential well with lattice, now electronics need to obtain again energy and could continue to transport to resilient coating inside, the second, (in figure, b), electronics passes multiple potential wells to resilient coating internal motion to process to the continuous resonant-tunneling conduction of many traps successively then, by appropriate design resilient coating parameter, can fall this probability of then wearing of electronics and be down to zero.This has just reduced the length of penetration of electronics in resilient coating, has reduced device resilient coating leakage current, thereby has improved device electric breakdown strength.
Brief description of the drawings
Fig. 1 is that oneself has technology GaN HEMT structural representation.Mainly comprise substrate (108), AlN nucleating layer (107), GaN resilient coating (106), AlN insert layer (105), the source electrode (101), drain electrode (102) and the grid (103) that on AlGaN barrier layer (104) and barrier layer, form, wherein source electrode (101) and drain electrode (102) form ohmic contact with barrier layer (104), and grid (103) forms Schottky contacts with barrier layer (104).
Fig. 2 is gallium nitride based transistor structure with high electron mobility schematic diagram provided by the invention.Mainly comprise substrate (108), AlN nucleating layer (107), AlInN/GaN compound buffer layer (202), GaN channel layer (201), AlN insert layer (105), the source electrode (101) forming on AlGaN barrier layer (104) and barrier layer, drain electrode (102) and grid (103).
Fig. 3 is AlInN/GaN compound buffer layer band structure and electronics vertical transport schematic diagram of mechanism in GaN HEMT provided by the invention, wherein E
g-AlInNfor AlInN material energy gap, E
g-GaNfor GaN material energy gap.
Fig. 5 a is GaN HEMT provided by the invention and the comparison of prior art GaN HEMT transfer characteristic, and wherein abscissa is grid voltage (V
g), ordinate is source-drain current (I
ds), solid line is the transfer characteristic that transistor Fig. 2 of the present invention uses AlInN/GaN compound buffer layer (202) structure, dotted line is the transfer characteristic that prior art transistor Fig. 1 uses GaN resilient coating (106) structure, device source drain voltage (V
ds) be 10V.
Fig. 5 b is that under GaN HEMT provided by the invention and prior art GaN HEMT cut-off state, leakage current comparison is sewed in source, and wherein abscissa is grid voltage (V
g), ordinate is that Leakage Current (I is leaked in source
leak), solid line is the leakage current that transistor Fig. 2 of the present invention uses AlInN/GaN compound buffer layer (202) structure, dotted line is the leakage current that prior art transistor Fig. 1 uses GaN resilient coating (106) structure, device source drain voltage (V
ds) be 10V.
Fig. 6 a is the vertical device structure schematic diagram of the present invention with AlInN/GaN compound buffer layer (202).Mainly comprise (602) two electrodes of substrate (108), AlInN/GaN compound buffer layer (202), GaN channel layer (201) and anode (601) and negative electrode, its Anodic (601) and GaN channel layer (201), negative electrode (602) and substrate (108) all form ohmic contact.
Fig. 6 b is the vertical device structure current-voltage characteristic comparison shown in Fig. 6 a, and wherein abscissa is anode voltage (V
a), ordinate is anode current (I
a),, solid line is the voltage-current characteristic that the present invention uses AlInN/GaN compound buffer layer (202) structure, dotted line is the voltage-current characteristic that has utilization GaN resilient coating (106) structure the sixth of the twelve Earthly Branches.
Specific embodiments
In the present invention, AlInN thickness in monolayer in described AlInN/GaN compound buffer layer (202) structure, GaN thickness in monolayer and resilient coating gross thickness can be according to concrete device index requests, use SENTAURUS,? the device simulation softwares such as MEDICI are determined, so that the resilient coating leakage current of device under cut-off state reaches minimum, the voltage endurance capability of large ground boost device.
For the effect of AlInN/GaN compound buffer layer (202) the STRUCTURE DEPRESSION leakage current described in checking the present invention, respectively the GaN HEMT that uses AlInN/GaN compound buffer layer (202) and GaN resilient coating (106) is carried out to emulation.Use in the GaN HEMT of AlInN/GaN compound buffer layer (202), GaN channel layer (201) thickness is 30nm, AlInN/GaN compound buffer layer (202) thickness is 3 μ m, and the interior AlInN thickness in monolayer of AlInN/GaN compound buffer layer (202) is 5nm, and GaN thickness in monolayer is 20nm; Use in the GaN HEMT of GaN resilient coating (106), GaN resilient coating (106) thickness is 3 μ m.Two kinds of other parameters of device are identical, and design parameter value is as shown in table 1, and device transfer characteristic as shown in Figure 5 a.
Relatively can find out from device transfer characteristic, use the GaN HEMT of AlInN/GaN compound buffer layer (202) structure to there is better pinch-off behavior, under identical two-dimensional electron gas, show larger output current (grid voltage V simultaneously
gduring for 1V, AlInN/GaN compound buffer layer (202) GaN HEMT output current is 1.30A/mm, and GaN resilient coating (106) GaN HEMT output current is 1.09A/mm), illustrate that AlInN/GaN compound buffer layer (202) structure has better two-dimensional electron gas confinement and less resilient coating leakage current.
Fig. 5 b is under cut-off state, use AlInN/GaN compound buffer layer (202) to sew and reveal current ratio with the GaN HEMT source of GaN resilient coating (106), as can be seen from the figure, under cut-off state, using the GaN HEMT source of AlInN/GaN compound buffer layer (202) to leak Leakage Current (solid line) than the GaN HEMT(dotted line that uses GaN resilient coating (106)) approximately 7 orders of magnitude have declined, illustrate that AlInN/GaN compound buffer layer (202) has suppressed electronics transporting in resilient coating effectively, reduce device resilient coating leakage current.
Table 1 device simulation structural parameters
| Device parameters | Parameter value |
| Grid are long | 0.5μm |
| Grid leak spacing | 2μm |
| Grid source spacing | 0.5μm |
| Si substrate thickness | 0.5μm |
| AlN nucleating layer thickness | 10nm |
| AlN inserting thickness | 1nm |
| AlGaN barrier layer thickness | 25nm |
| Raceway groove two-dimensional electron gas | 1×10 13cm -2 |
| Source-drain voltage | 10V |
For further verifying the effect of AlInN/GaN compound buffer layer (202) STRUCTURE DEPRESSION resilient coating leakage current, respectively to using AlInN/GaN compound buffer layer of the present invention (202) shown in Fig. 6 a and using the current-voltage of prior art GaN resilient coating (106) vertical device structure to carry out emulation.Wherein GaN channel layer (201) thickness is 30nm, Si-Substrate Thickness is 0.5 μ m, use in the vertical stratification of AlInN/GaN compound buffer layer (202), AlInN/GaN compound buffer layer (202) thickness is 0.5 μ m, the interior AlInN thickness in monolayer of AlInN/GaN compound buffer layer (202) is 5nm, and GaN thickness in monolayer is 20nm; Use in the GaN HEMT of GaN resilient coating (106), GaN resilient coating (106) thickness is 0.5 μ m.
Device simulation result is as shown in Figure 6 b: have very large (dotted line) of its leakage current of technology GaN resilient coating (106) structure the sixth of the twelve Earthly Branches, electric current is linear increase until saturated along with the increase of voltage; The AlInN/GaN compound buffer layer that 0.5 μ m is thick has suppressed leakage current (solid line) effectively, until the electric current of 200V left and right device just starts slow increase.
Claims (4)
1. one kind has the GaN base transistor with high electronic transfer rate of compound buffer layer, include substrate (108), aluminium nitride (AlN) nucleating layer (107), gallium nitride (GaN) channel layer (201), aluminium nitride (AlN) insert layer (105), the source electrode (101) forming on aluminum gallium nitride (AlGaN) barrier layer (104) and barrier layer, drain electrode (102) and grid (103), wherein source electrode (101) and drain electrode (102) form ohmic contact with AlGaN barrier layer (104), grid (103) forms Schottky contacts with AlGaN barrier layer (104), it is characterized in that: have one deck aluminium indium nitrogen/gallium nitride (AlInN/GaN) compound buffer layer (202) being positioned between GaN channel layer (201) and AlN nucleating layer (107), and in this compound buffer layer (202), in AlInN layer, indium molar constituent is 17%～18%, to guarantee that AlInN material is identical with GaN material lattice constant.
2. a kind of GaN base transistor with high electronic transfer rate with compound buffer layer according to claim 1, is characterized in that; Described AlInN/GaN compound buffer layer (202) is positioned on AlN nucleating layer (107), by GaN/AlInN ... GaN/AlInN repeated arrangement is until the required thickness of compound buffer layer.
3. a kind of GaN base transistor with high electronic transfer rate with compound buffer layer according to claim 2, is characterized in that: described AlInN/GaN compound buffer layer (202) gross thickness is 1 μ m～8 μ m.
4. a kind of GaN base transistor with high electronic transfer rate with compound buffer layer according to claim 3, it is characterized in that: in described AlInN/GaN compound buffer layer (202), AlInN thickness in monolayer is 1nm～10nm, and GaN thickness in monolayer is 10nm～50nm.
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| CN104157679B (en) * | 2014-08-27 | 2017-11-14 | 电子科技大学 | A kind of gallium nitride base enhancement mode HFET |
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| CN113659006B (en) * | 2021-08-05 | 2024-05-24 | 王晓波 | HEMT epitaxial device based on third-generation semiconductor GaN material and growth method thereof |
| WO2023070428A1 (en) * | 2021-10-28 | 2023-05-04 | 华为技术有限公司 | Integrated circuit and method for preparing same, and power amplifier and electronic device |
| CN114156380B (en) * | 2021-11-30 | 2023-09-22 | 华灿光电（浙江）有限公司 | Light-emitting diode epitaxial wafer for improving internal quantum efficiency and preparation method thereof |
| CN117199122A (en) * | 2022-05-26 | 2023-12-08 | 华为技术有限公司 | Semiconductor device, electronic chip, and electronic apparatus |
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| CN100397655C (en) * | 2004-12-02 | 2008-06-25 | 中国科学院半导体研究所 | Structure of improving gallium nitride base high electronic mobility transistor property and producing method |
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