CN100397655C - Structure of improving gallium nitride base high electronic mobility transistor property and producing method - Google Patents
Structure of improving gallium nitride base high electronic mobility transistor property and producing method Download PDFInfo
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- CN100397655C CN100397655C CNB2004100099225A CN200410009922A CN100397655C CN 100397655 C CN100397655 C CN 100397655C CN B2004100099225 A CNB2004100099225 A CN B2004100099225A CN 200410009922 A CN200410009922 A CN 200410009922A CN 100397655 C CN100397655 C CN 100397655C
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Abstract
The present invention relates to a structure for improving the property of a gallium nitride based high electronic mobility transistor, which comprises a sapphire substrate or a silicon carbide substrate or a silicon substrate, a high-resistance semi-insulation gallium nitride buffer layer prepared on the substrate, a high movability gallium nitride channel layer prepared on the high-resistance semi-insulation gallium nitride buffer layer, a thin aluminium nitride insert layer prepared on the high movability gallium nitride channel layer to improve the combination property of the gallium nitride based high electronic mobility transistor material, and an n-type doped or unpurposed doped ALGaN barrier layer prepared on the thin aluminium nitride insert layer.
Description
Technical field
The invention belongs to technical field of semiconductors, especially refer to improve the structure and the manufacture method thereof of GaN base transistor with high electronic transfer rate (AlGaN/GaN HEMT) performance.
Background technology
Aluminum-gallium-nitrogen/gallium nitride (AlGaN/GaN) high electron mobility transistor structure that III-V family gallium nitride (GaN) and compound semiconductor materials thereof form is at high temperature, high frequency, high-power, radioresistance microwave device and circuit field have very important application prospect, this mainly is to have big energy gap because form the semi-conducting material of AlGaN/GaN heterostructure, high breakdown electric field, good chemical stability and strong capability of resistance to radiation, also because the GaN material has high electronics saturation drift velocity and peak shift speed, the more important thing is simultaneously because GaN material one side can form the two-dimensional electron gas with high electron concentration and high electron mobility near the AlGaN/GaN heterojunction boundary.The AlGaN/GaN High Electron Mobility Transistor has important effect at aspects such as space flight and aviation, high temperature intense radiation environment, oil exploration, automation, radar and communications, automotive electronics.
Current, to the emphasis of AlGaN/GaN High Electron Mobility Transistor research, the first further improves every output characteristic of device, satisfies the application of device under high temperature, high frequency, high-power condition.The key point that improves GaN based high electron mobility transistor and circuit performance is to improve the concentration and the mobility of two-dimensional electron gas in the raceway groove, improves the output current density and the power density of device thus.At present,, generally adopt the barrier layer doped structure, mix, can improve two-dimensional electron gas in the raceway groove to a certain extent by the AlGaN barrier layer being carried out the n type in order to improve two-dimensional electron gas and mobility in the HEMT structure raceway groove.But because the characteristic of GaN sill is entrained in to improve on the electron concentration and only plays deputy effect, the channel electrons that is caused by polarity effect is topmost; And the doping of barrier layer n type, certainly will increase the difficulty that material is grown, reduce the crystal mass of HEMT structural material, so the validity of this method also needs further discussion.
Two of the emphasis of raising device performance research is the destabilizing factors that solve the device practical work process, improves the stability and the reliability of device, satisfies the practicability requirement of device.In the research to the AlGaN/GaNHEMT reliability and stability, the greatest problem of restriction device practicability is the current collapse effect, and promptly device output current when High-Field or radiofrequency signal reduces, and knee voltage increases, the phenomenon that output power density reduces.Current formation reason about AlGaN/GaN HEMT device current avalanche effect, what have convincingness most is empty bar phantom, be under the radiofrequency signal, channel electrons is captured by the trap center on AlGaN barrier layer surface, caused reducing of channel electrons concentration, and the surface state trapped electron forms empty grid, the modulation channel current, cause that further channel current reduces, formed current collapse.So, reduce channel electrons leakage to barrier layer when condition changing, guarantee the stability of channel electrons, be to reduce the effective measures that person very eliminates the current collapse effect fully.
According to above argumentation as seen, improve the channel electrons concentration of AlGaN/GaN HEMT, increase electron mobility, the restriction electronics is the key point of raising device performance and reliability, stability to the leakage of barrier layer and device surface.
Summary of the invention
The purpose of this invention is to provide a kind of novel high electron mobility transistor structure and preparation method, the High Electron Mobility Transistor of this kind structure can limit the leakage of channel electrons to barrier layer effectively, increase channel electrons concentration and mobility, improve the output characteristic of device, reduce the volume and weight of microwave system; This structure can also suppress the current collapse effect effectively, improves the stability and the reliability of device, promotes the practicalization of device.
Another object of the present invention provides the preparation method of described High Electron Mobility Transistor.
A kind of structure that improves the GaN base transistor with high electronic transfer rate performance of the present invention is characterized in that, comprising:
One Sapphire Substrate or silicon carbide substrates or silicon substrate;
The semi-insulating gallium nitride resilient coating of one high resistant, the semi-insulating gallium nitride resilient coating of this high resistant is produced on the substrate;
One high mobility gallium nitride channel layer, this high mobility gallium nitride channel layer are produced on the semi-insulating gallium nitride resilient coating of high resistant;
The skim aln inserting layer, this thin layer aln inserting layer is produced on the high mobility gallium nitride channel layer, and this thin layer aln inserting layer can improve the combination property of GaN base transistor with high electronic transfer rate material;
One n type mixes or involuntary doping aluminum gallium nitride barrier layer, and this n type mixes or involuntary doping aluminum gallium nitride barrier layer is produced on the thin layer aln inserting layer.
The semi-insulating gallium nitride resilient coating of wherein said high resistant, the about 2-3.5 μ of its growth thickness m.
Wherein said high mobility gallium nitride channel layer, its growth thickness is about 50-100nm.
Wherein said thin layer aln inserting layer, its thickness are 1-5nm.
Wherein the aln inserting layer energy gap is far longer than gallium nitride and aluminum gallium nitride, increases the limitation capability of channel electrons thus, reduces electronics and leaks.
Wherein said aluminum gallium nitride barrier layer, its thickness are 20-30nm.
A kind of manufacture method that improves the GaN base transistor with high electronic transfer rate performance of the present invention is characterized in that, comprises the steps:
Step 1: on Sapphire Substrate or silicon carbide substrates or silicon substrate crystal face, adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxial method or the semi-insulating gallium nitride resilient coating of hydride gas-phase epitaxy method growth one deck high resistant earlier;
Step 2: growth high mobility gallium nitride channel layer on the semi-insulating gallium nitride resilient coating of high resistant;
Step 3: growth skim aln inserting layer on high mobility gallium nitride channel layer, this thin layer aln inserting layer can improve the combination property of GaN base transistor with high electronic transfer rate material;
Step 4: last growing n-type mixes or involuntary doping aluminum gallium nitride barrier layer.
The semi-insulating gallium nitride resilient coating of wherein said high resistant, the about 2-3.5 μ of its growth thickness m.
Wherein said high mobility gallium nitride channel layer, its growth thickness is about 50-100nm.
Wherein said thin layer aln inserting layer, its thickness are 1-5nm.
Wherein the aln inserting layer energy gap is far longer than gallium nitride and aluminum gallium nitride, increases the limitation capability of channel electrons thus, reduces electronics and leaks.
Wherein said aluminum gallium nitride barrier layer, its thickness are 20-30nm.
Description of drawings
For further specifying content of the present invention, below in conjunction with embodiment the present invention is done a detailed description, wherein:
Fig. 1 is gallium nitride (GaN), aluminium nitride (AlN), three kinds of compound energy gaps of indium nitride (InN) schematic diagram;
Fig. 2 is the band structure schematic diagram of various different HEMT structures.
Wherein Fig. 2 (a) is the AlGaN/AlN/GaN HEMT with aln inserting layer structure of the present invention;
Fig. 2 (b) is traditional AlGaN/GaN HEMT structure;
Fig. 3 is high resistant of the present invention (semi-insulating) GaN buffer growth structural representation;
Fig. 4 high mobility GaN of the present invention channel layer growth structure schematic diagram;
Fig. 5 is a thin layer AlN insert layer growth structure schematic diagram of the present invention;
Fig. 6 is an involuntary doped with Al GaN barrier layer growth structure schematic diagram of the present invention.
Embodiment
As shown in Figure 6, be the schematic diagram of high electron mobility transistor structure of the present invention.In this field-effect transistor structure, most important parts are AlGaN/AlN/GaN heterostructures.AlN insert layer thickness will be controlled between the 1-5nm, guarantees the good characteristic of device.
Specific embodiment (consult Fig. 3-Fig. 6):
The present invention improves the structure of GaN base transistor with high electronic transfer rate performance, comprising:
One Sapphire Substrate or silicon carbide substrates or silicon substrate 10;
The semi-insulating gallium nitride resilient coating 20 of one high resistant, the semi-insulating gallium nitride resilient coating 20 of this high resistant is produced on the substrate 10, and the growth temperature of this making is about 1000, the semi-insulating gallium nitride resilient coating 20 of this high resistant, the about 2-3.5 μ of its growth thickness m (see figure 3);
One high mobility gallium nitride channel layer 30, this high mobility gallium nitride channel layer 30 are produced on the semi-insulating gallium nitride resilient coating 20 of high resistant, this high mobility gallium nitride channel layer 30, and its growth thickness is about the 50-100nm (see figure 4);
Skim aln inserting layer 40, this thin layer aln inserting layer 40 is produced on the high mobility gallium nitride channel layer 30, this thin layer aln inserting layer 40 can improve the combination property of GaN base transistor with high electronic transfer rate material, this thin layer aln inserting layer 40, its thickness are the 1-5nm (see figure 5);
One n type mixes or involuntary doping aluminum gallium nitride barrier layer 50, and this n type mixes or involuntary doping aluminum gallium nitride barrier layer 50 is produced on the thin layer aln inserting layer 40, and this aluminum gallium nitride barrier layer 50, its thickness are the 20-30nm (see figure 6).
Wherein thin layer aln inserting layer 40 energy gaps are far longer than gallium nitride and aluminum gallium nitride, increase the limitation capability of channel electrons thus, reduce electronics and leak.
Please again in conjunction with consulting Fig. 3-Fig. 6, a kind of manufacture method that improves the GaN base transistor with high electronic transfer rate performance of the present invention comprises the steps:
Step 1: on Sapphire Substrate or silicon carbide substrates or silicon substrate 10 crystal faces, adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxial method or the semi-insulating gallium nitride resilient coating 20 of hydride gas-phase epitaxy method growth one deck high resistant earlier, its growth temperature about 1000, the semi-insulating gallium nitride resilient coating 20 of this high resistant, the about 2-3.5 μ of its growth thickness m (see figure 3);
Step 2: growth high mobility gallium nitride channel layer 30 on the semi-insulating gallium nitride resilient coating 20 of high resistant, this high mobility gallium nitride channel layer 30, its growth thickness is about the 50-100nm (see figure 4);
Step 3: growth skim aln inserting layer 40 on high mobility gallium nitride channel layer 30, this thin layer aln inserting layer 40 can improve the combination property of GaN base transistor with high electronic transfer rate material, thin layer aln inserting layer 40, its thickness are the 1-5nm (see figure 5);
Step 4: growing n-type mixes or involuntary doping aluminum gallium nitride barrier layer 50 on thin layer aln inserting layer 40 at last, and aluminum gallium nitride barrier layer 50, its thickness are the 20-30nm (see figure 6).
Wherein thin layer aln inserting layer 40 energy gaps are far longer than gallium nitride and aluminum gallium nitride, increase the limitation capability of channel electrons thus, reduce electronics and leak.
With its band structure of HEMT structure of the method growth shown in Fig. 2 (a).The present invention is according to the characteristics of the different energy gaps of GaN sill, utilize the bigger AlN of energy gap that GaN channel layer and AlGaN barrier layer are separated, be limited in the two-dimentional electronics in the GaN channel layer in the channel layer fully, can effectively suppress the leakage of channel electrons to aluminum gallium nitride barrier layer and device surface, increased channel electrons concentration, reduce its chance that is scattered, increased electron mobility, improved the output characteristic of device; Simultaneously, because to the good restriction of channel electrons, also reduced the influence to device such as temperature, electric field strength, the surface state that has effectively suppressed barrier layer DX center and AlGaN surface is captured channel electrons and is formed the current collapse effect that empty grid cause, has improved the reliability and stability of device.The room temperature hall measurement shows that this high electron mobility transistor structure has good electrology characteristic (see Table 1, table 1 is that AlGaN/AlN/GaN structure HEMT of the present invention and traditional two kinds of structure normal temperature of AlGaN/GaN HEMT Hall test result compare):
Table 1.
Two-dimensional electron gas is respectively 1.59 * 10 under two sample room temperatures
13Cm
-2, 1.51 * 10
13Cm
-2, mobility is respectively 1412cm
2/ V.s and 1522cm
2/ V.s, the product of mobility and electron concentration is up to 2.25 * 10
16V
-1s
-1With 2.30 * 10
16V
-1s
- 1, be far longer than traditional AlGaN/GaN HEMT structure, show that AlGaN/AlN/GaNHEMT structure of the present invention can increase channel electrons concentration and mobility greatly, improve electric properties of devices.
The present invention has made full use of the self character of material, increases channel electrons concentration and mobility, improves the output characteristic of device; Simultaneously can suppress the current collapse effect effectively, improve the stability and the reliability of device.Its technology is simply effective, be a kind of novel high electron mobility transistor structure that can improve device performance and reliability, stability greatly, for the manufacturing of high-performance high temperature, high-power, high frequency, radioresistance AlGaN/GaN microwave device and circuit lays the foundation.
The operation principle of the High Electron Mobility Transistor of this project organization can be explained as follows:
One, the main effect of ground floor high resistant (semi-insulating) gallium nitride resilient coating is to reduce device current to leak, the switching characteristic of optimised devices, and guarantee the growth quality of other epitaxial loayer of growth it on, the raising device performance;
Two, the effect of high mobility gallium nitride channel layer is for electronics provides a high-quality operation passage, guarantees the density and the mobility of two-dimentional electronics.
Three, the effect first of thin layer aln inserting layer is utilized the characteristics of its energy gap greater than gallium nitride, the restriction electronics is to the leakage on aluminum gallium nitride barrier layer and surface, increase channel electrons concentration, suppress simultaneously because the current collapse effect that DX center trapped electron causes in surface state or the aluminum gallium nitride barrier layer; It two is to utilize binary compound that channel electrons and ternary compound aluminum gallium nitride barrier layer are separated, and has reduced the scattering of electronics, has increased channel electron mobility.Specifically referring to Fig. 1, Fig. 2.
Four, the effect of involuntary doping or n type doping aluminum gallium nitride barrier layer provides channel electrons.
Comprehensive above-mentioned explanation, High Electron Mobility Transistor of the present invention can limit the leakage of channel electrons to barrier layer and device surface effectively, increases channel electrons concentration and mobility, improves the output characteristic of device; Simultaneously can suppress the current collapse effect effectively, improve the stability and the reliability of device.Therefore, High Electron Mobility Transistor of the present invention is a kind of very potential new construction.
Claims (12)
1. a structure that improves the GaN base transistor with high electronic transfer rate performance is characterized in that, comprising:
One Sapphire Substrate or silicon carbide substrates or silicon substrate;
The semi-insulating gallium nitride resilient coating of one high resistant, the semi-insulating gallium nitride resilient coating of this high resistant is produced on the substrate;
One high mobility gallium nitride channel layer, this high mobility gallium nitride channel layer are produced on the semi-insulating gallium nitride resilient coating of high resistant;
The skim aln inserting layer, this thin layer aln inserting layer is produced on the high mobility gallium nitride channel layer, and this thin layer aln inserting layer can improve the combination property of GaN base transistor with high electronic transfer rate material;
One n type mixes or involuntary doping aluminum gallium nitride barrier layer, and this n type mixes or involuntary doping aluminum gallium nitride barrier layer is produced on the thin layer aln inserting layer.
2. the manufacture method of raising GaN base transistor with high electronic transfer rate performance according to claim 1 is characterized in that, the semi-insulating gallium nitride resilient coating of wherein said high resistant, the about 2-3.5 μ of its growth thickness m.
3. the structure of raising GaN base transistor with high electronic transfer rate performance according to claim 1 is characterized in that, wherein said high mobility gallium nitride channel layer, and its growth thickness is about 50-100nm.
4. the structure of raising GaN base transistor with high electronic transfer rate performance according to claim 1 is characterized in that, wherein said thin layer aln inserting layer, its thickness are 1-5nm.
5. the structure of raising GaN base transistor with high electronic transfer rate performance according to claim 1, it is characterized in that, wherein the aln inserting layer energy gap is far longer than gallium nitride and aluminum gallium nitride, increases the limitation capability of channel electrons thus, reduces electronics and leaks.
6. the structure of raising GaN base transistor with high electronic transfer rate performance according to claim 1 is characterized in that, wherein said aluminum gallium nitride barrier layer, its thickness are 20-30nm.
7. a manufacture method that improves the GaN base transistor with high electronic transfer rate performance is characterized in that, comprises the steps:
Step 1: on Sapphire Substrate or silicon carbide substrates or silicon substrate crystal face, adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxial method or the semi-insulating gallium nitride resilient coating of hydride gas-phase epitaxy method growth one deck high resistant earlier;
Step 2: growth high mobility gallium nitride channel layer on the semi-insulating gallium nitride resilient coating of high resistant;
Step 3: growth skim aln inserting layer on high mobility gallium nitride channel layer, this thin layer aln inserting layer can improve the combination property of GaN base transistor with high electronic transfer rate material;
Step 4: growing n-type mixes or involuntary doping aluminum gallium nitride barrier layer on the thin layer aln inserting layer at last.
8. the manufacture method of raising GaN base transistor with high electronic transfer rate performance according to claim 7 is characterized in that, the semi-insulating gallium nitride resilient coating of wherein said high resistant, the about 2-3.5 μ of its growth thickness m.
9. the manufacture method of raising GaN base transistor with high electronic transfer rate performance according to claim 7 is characterized in that, wherein said high mobility gallium nitride channel layer, and its growth thickness is about 50-100nm.
10. the manufacture method of raising GaN base transistor with high electronic transfer rate performance according to claim 7 is characterized in that, wherein said thin layer aln inserting layer, its thickness are 1-5nm.
11. the manufacture method of raising GaN base transistor with high electronic transfer rate performance according to claim 7, it is characterized in that, wherein the aln inserting layer energy gap is far longer than gallium nitride and aluminum gallium nitride, increases the limitation capability of channel electrons thus, reduces electronics and leaks.
12. the manufacture method of raising GaN base transistor with high electronic transfer rate performance according to claim 7 is characterized in that, wherein said aluminum gallium nitride barrier layer, its thickness are 20-30nm.
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Cited By (2)
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| CN102034859A (en) * | 2009-10-02 | 2011-04-27 | 富士通株式会社 | Compound semiconductor device and method of manufacturing the same |
| CN102664188A (en) * | 2012-05-10 | 2012-09-12 | 电子科技大学 | Gallium nitride-based high-electron-mobility transistor with composite buffering layer |
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| CN101459080B (en) * | 2007-12-12 | 2010-04-14 | 中国科学院微电子研究所 | Method for manufacturing gallium nitride-based field effect transistor |
| CN101740384B (en) * | 2008-11-12 | 2011-08-31 | 中国科学院半导体研究所 | Method for preparing enhanced aluminum-gallium-nitrogen/gallium nitride transistor with high electron mobility |
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| US5192987A (en) * | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102034859A (en) * | 2009-10-02 | 2011-04-27 | 富士通株式会社 | Compound semiconductor device and method of manufacturing the same |
| CN102034859B (en) * | 2009-10-02 | 2013-01-23 | 富士通株式会社 | Compound semiconductor device and method of manufacturing the same |
| TWI418031B (en) * | 2009-10-02 | 2013-12-01 | Fujitsu Ltd | Compound semiconductor device and method of manufacturing the same |
| CN102664188A (en) * | 2012-05-10 | 2012-09-12 | 电子科技大学 | Gallium nitride-based high-electron-mobility transistor with composite buffering layer |
| CN102664188B (en) * | 2012-05-10 | 2014-07-23 | 电子科技大学 | Gallium nitride-based high-electron-mobility transistor with composite buffering layer |
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